TWI255209B - Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and proximity substrate preparation sequence, and methods, apparatus, and systems for implementing the same - Google Patents

Abstract

A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry. A method for preparing a surface of a substrate is also provided. The method includes scanning the surface of the substrate by a meniscus, preparing the surface of the substrate using the meniscus, and performing a next preparation operation on the surface of the substrate that was prepared without performing a rinsing operation.

Description

1255209 IX. Description of the invention: [Technical field to which the invention pertains] The present invention improves the cleaning and/or dry reduction of a half-substrate substrate by the side-stage cleaning and silk technology, particularly the contamination of the substrate surface. Preparation, cleaning, and/or drying [Prior Art] Is the riding of the μ half-body device involved? Processing operations. This conversion includes: ^ deposition, light deletion, remuneration operation, chemical mechanical polishing ^ ^ accumulation of gold residue 'must clean the surface of the substrate to remove the attachment; =::r:==; The problem of 2, granules, and oxidized granules and their: by = =, ====== 嶋 害 harm is the non-effective surface). Heart and & the back of the substrate (also ST; make the substrate processing tool or measuring tool 1 move: ίίΐ = her. Also, the backside will not be able to migrate from the shot - a 1255209, so the subsequent processing of pollution. Disadvantages, so in a specific substrate processing operation, first, in the cylinder cleaning assembly, the fluid supply, = ^ weeks, that is, the front side of the wafer. On the back of the shallow touch wafer. This exemplary 5 body: one in the middle Let the brush of 3 keep the day, in some cases, the cleaning fluid SC1 may be sprayed with ^f = ^ into the wash at this time, in the cleaning module using the conditioning fluid, 曰, 曰曰 ^, above the cross-contamination and The quality of SCI iHF· on the front side of the wafer. 〃 Incompatibility of HF/liquid mixture, it is inevitable that the cleaning operation will be different except for the front side of the 3 dyed wafer. The “washing area will not have to be the same—come not only the complexity of the wafer processing system, but also the U, and the chemical manipulation configuration of the money has become extremely ground, and the use of chemicals to clean the front side of the substrate The back side can be further =itt(DI) water to rinse the back of the substrate with positive In this way, = 以 ^ 是 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗Have specific conditions (such as loading negative road materials) 'where the front side of the wire plate will cause the conditions of the surface of the county plate to be exhausted, such as washing the stone substrate to cause oxygen on the exposed surface of the substrate 1255209 layer ΐ : 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 正面 。 。 。 。 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处 处It is necessary to improve the productivity of the substrate by using the smear = wood cattle. It is also necessary to prepare a device. [Inventive content] The disk system is provided with a method for preparing the surface of the substrate, and the method for preparing the surface of the substrate is simplified. Then apply an incompatible chemical to minimize the substrate yield and increase the substrate productivity. 上述 上述 上述 1 1 用 用 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 擦 ; ; ; ; ; ; ; ; ; ; ; ; ; Close-up reception, 芙 cup, 矣品田In another embodiment, the present invention provides a manufacturing method, apparatus, and system that can substantially reduce the time required for the proximity preparation of the substrate surface because it does not require cleaning operations. I can implement the invention into a number of types, including treatments, examples, ',, ', *, or methods. The syllabus of the present invention is a new implementation of the ΐ ΐ ΐΐ ΐΐ ΐΐ 提供 提供 , , The cleaning and drying of the county board includes the surface of the back surface of the substrate which is scrubbed with the scrubbing fluid chemical to form the front surface of the substrate, and the surface of the substrate is formed by the back surface of the substrate. The north of the shape of the front and back meniscus is further covered by 11 front and back meniscus swept panels on the front side of the fish substrate. The front and back meniscus each contain a chemical that is compatible with the scrubbing fluid chemistry. 1255209 Face applies a front bend. i A compatible front side cleaning chemical on the front side of the substrate. ', I, scrub ▲ body chemicals are chemical:, and the back head. The brush system is formed into a fine rubbing material, holding the si-based face, and the age is _ in essence relative to the front. Qiao: In the Guanzhong, the county-level system is provided. This line includes the brush head. Front 戦 # Thinner than the substrate. The method of injuring the surface of the substrate of ^, medium, and μ is buried. The method comprises the steps of: 扫ίΐΓί sweeping the surface of the substrate, preparing the surface of the substrate using the meniscus, and underlying the package; providing a method for preparing the surface of the substrate. The method

The surface of the substrate is prepared by applying the first liquid surface on the Hit and the second meniscus is applied on the surface of the substrate, and the second application layer is prepared for the second time. In the case of it, the permeation is applied immediately to the first meniscus. In the embodiment, the front side and the back side of the substrate are provided to form a front side f liquid surface by the front surface of the substrate and a lunar surface liquid level by the substrate 1 . The method further comprises sweeping the front side of the substrate and the back side of the substrate by the front meniscus and the back meniscus. The front surface of the sweeping substrate and the two sides of the substrate are formed to be cleaned and dried to dry the front surface of the substrate and the back surface of the substrate. The method includes a step of preparing the US board on the front side of the substrate and the back side of the substrate after the operation of the front side of the silk screen and the white and lunar surfaces of the substrate without the rinsing operation. i The present invention has various advantages. Most notably, conventional techniques for cleaning the backside and front of the wafer, respectively, are used as compared to the use of incompatible = academics, such as SCI and HF. 5 In embodiments of the invention, compatible Chemical cleaning and / or drying round the front and back. Another advantage is that the use of compatible chemicals to clean crystal 1255209 back-rigid scrubbing and proximity cleaning cleaning system is further advantageous in that it is based on the application of compatible chemicals. Cleaning and/or drying of the wafer surface allows scrubbing and proximity cleaning and / / ί ί 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 By avoiding the use of incompatible chemicals, it is advantageous to reduce the footprint of the equipment. Still another advantage is that the embodiment of the present invention interleaves the manipulation of compatible chemicals in the device, so that the use of the non-flow control element and the waste liquid processing unit is low. — 伽 lies in · (4) knowledge (4) words no need to be in each wafer front and back side of the chemical 'ίίί5π; 1! 0 5 ^ processing _ and cost. The other gamma of this (4) is: the secret case is enough to make the surface of the sun circle clean and clean for the next time. The semiconductor or crystal face (such as the metal surface) The position and advantages of the present invention can be more clearly seen in the accompanying drawings. In the drawings, like reference numerals are used: [Embodiment] Compatible 丄 simplifies the fluid handling configuration and allows the substrate to be prepared due to the application of chemical chemistry that is not compatible with the scouring chemistry, and the front and back sides. In the middle or the back of the substrate, the front and back sides are respectively used; and the front and back sides of the substrate are dried by 5 sides. In the implementation of the ^ 啊 清洗 / / / / / / / / / / / / / / / 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙 异丙/Ν2# 1255209 For wafer surface. In one embodiment, the fluid meniscus is created by pumping from the surface of the wafer, in addition to vacuuming, and applying IPA/N2 and processing fluid in addition to the fluid and IPA/N2. According to one embodiment, the fluid meniscus is defined as a fluid layer defined between the proximal joint and the wafer surface, and is capable of moving stably and controllably throughout the wafer face. ^ In the consistent application method, the scrubbing chemical fennel used to clean the front and back of the wafer. The front and back chemicals are dissolved in fluorinated acid (HF) and deionized water (DIW). Depending on the desired application, the scrubbing chemicals and the HF of the front and back chemicals can be made the same or different. Since it is not necessary to rinse the surface of the substrate between the substrate preparation operations, the step (4) substantially reduces the cost and the processing time for preparing the surface of the substrate, and the use of the chemical-containing meniscus With the near joint preparation, the substrate can be prepared without rinsing the surface of the substrate. In one of the examples, the ϊ ϋϊ layer is prepared in close proximity. According to still another embodiment, by removing the surface of the board formed on the surface of the substrate, the residue can be intentionally generated using the first meniscus. Then, the second meniscus is used to cause a chemical reaction between the second and the second and the residue, and the substrate is placed close to the substrate. Such a - will not require subsequent substrate preparation operations in two near steps. In one of them; the = plate 'is two: one near the joint and the second meniscus is benefited by the second proximal joint 】 / 夂: = round single-crossing close to the entire crystal (HP) έ = 下° Brothers, in order to be able to thoroughly understand the invention, it is mentioned that the victory of the eve, Shi Lang. However, familiar with this technique #= spider to peak, especially in order to avoid unnecessarily obscuring the shell. In other respects, the invention is not described in the following. 1255209 / or: ΐ 例 例 例 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示 示The back arm and U2b cause the front member m to be a motor, however in various embodiments, the actuating member u ^ 疋 any element capable of moving the front and back arms 112a and 112b. Moreover, it must be understood by those skilled in the art that different mechanisms can be implemented with the front and back arms 112a and (10) and thus the front and back sides U 〇 b will be able to enter and exit the process chamber ι 4 . The f-chamber 104 includes a plurality of rollers 1〇8 formed to be engaged and rotated to rotate the wafer 102. In one of the examples, four cylinders are implemented to function as a stabilizing member to be joined to the crystal '1〇2. The remaining wafer is rotated by 1〇2. It is possible to remove the two wafers 102 and then move them back to the original position, and then the wafers on the front side of the 1G2a system contain 146 liquids 146' Contains 145 contaminants. In one of the ^^, the yen is more than the liquid 146, as the surface l〇2b.

Also included is a brush 122 having a plurality of nodules 124. In Fig. 1A, the brush 122 is disposed below the wafer back surface 102b. H is also adjacent to the processed lower wall surface a, so that the front side L can be vacated to remove the waste liquid and excess fluid. Using, for example, a sliding mechanism, it is possible to control the flow control 11 ll8a, _, and kimono, which are limited to: the cleaning and/or drying module including the rf number, and store the unused chemicals of the Japanese yen 102. Each flow controller gland 11 1255209 to mc includes main outlets ma, (10), and mc, respectively. 120 5 and pollutants. The waste material of the & body, waste liquid, residue, and treatment unit in Fig. 1A is defined by the waste liquid entering the waste liquid (4) t exhaust population 128a, 128b, and (10) and head ll (Ja with I10b^Brush °^2 Figure 1B below, not only provides a description of the mixing and supply of the near-quantity manipulation cry, 118 $, but also provides additional information about the flow 'ti with the king unit 120. Qing, Xian and / 2, 3 ', which does not according to the present invention - the supply, transfer, and collection of chemicals in the scrubbing close-up diagram 。 J 曰 100. αΤ", 员不• stored in the stream 1 controller ll8a Among the chemical port controllers 118b, the chemical port B. You Huashan to 0 port A and the stored in stream 1 in 1 towel and 1 t system in the official 125 to mix into the appropriate concentration. V unused chemicals are unused HF and the next day H is the 'unused ^ and Dlw pumped into the manifold 125, = mixed '俾 can make the front cleaning chemicals present The concentration required. —_中中'System Controller 116 is the computer software that monitors the concentration of the product and the desired concentration. In an example, between scrubbing and rubbing, (4) supplying fresh 134, the unmixed chemical Α and Β mixed liquid sample HF 的 谷 谷 谷 ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) Or dry a, supplying the same HF solution to the front side joint via the supply pipe 127, and supplying the DIW to the back side joint via the supply pipe 129. In the illustrated white, the case, via the main outlet 124a 124b, the chemical A and the DIW are sent to the f笞125, and the HF and the DIW are mixed into an appropriate concentration. Thereafter, the fluid inlets are defined in the front and back proximal joints 11〇a and n〇b, respectively. 126a and 613 supply the HF solution to the front proximal joint n〇a, and the DIW water to the back proximal joint 110b. In the same manner, the chemical c shown is supplied to the front side by the supply pipes 131 and 133, respectively. The back side is close to the joints 九(9) and 丨丨(9). As shown, the chemical c is supplied to the supply pipe by the main outlet 124c, and then through the fluid inlets 126b and 126b, 12 1255209: 阙m is not only used to control waste The liquid is 3 yuan 212 乍〇 is == body. Our flow controllers 118a to u8c The port is controlled and controlled from the system controller 116 and the monitoring valve is in the "in" example, as shown in the figure, respectively, via the line 137 盥 '9 腾 and ll 〇 b excluded as chemistry The waste material of the product, the dirt surface and the back side joint and the liquid pumping body 4 above the wafer back surface lG2b are sent from the front surface of the crystal 81 to the line 137 disk; the middle H outlet 126c, and the » And (10) transporting the waste material to the waste road 130, and discharging the pollutant from the processing chamber, and then discharging it to the front side of the wafer and the back side of the 1G2a#, and supplying it to the back surface 102b of the wafer during the monthly washing process. On the top of the heart? Near _= a school!: for r in the product. In this way, the present invention = the front side of the joint 120a and the use of similar chemicals and the production of the front surface of the wafer 102 2: two gas two waste parts. In this manner, waste fluid and contaminants from the processing chamber 104 can be utilized with the same drainage and venting elements. - A simplified cross-sectional view, each of which is provided in the scrubbing proximity cleaning and/or drying system 100 in accordance with the present invention, in which the ntA & The wafer back side 102b is cleaned by having the brush 122 wafer wafer back. In one embodiment, the brush 122 that is initially limited to being processed to the lower 1G4a_near height H1 is along the direction 13 1255209 and, at this time, 'the brush 122 is rotated about the rotational direction 140 ΐίίί When moving to the periphery of the wafer back surface 102b and the wafer 102 is rotated (10), the nodules 124 of the brush 122 and the brush 122 act on the wafer back surface 102b.

In the embodiment of 2A, before the start of the scrubbing operation, the front and back arms $, 丨^, i1% firstly correspond to the front and the side of the joint 1 should be transported with 1 l〇b® 2 fn to 1〇 4 in. The front and back proximal joints 110a are transported everywhere, and the front and back proximal joints are applied to the upper and lower sides of the joints 108 to the top and bottom of the phase 108, respectively. According to this, the front side and the back side joint 110a and the tanning system are almost at the same time as the end of the scrubbing operation, and the front and back sides of the wafer 1 and 2a are cleaned and dried. It must be understood by those of ordinary skill in the art that, in various embodiments, the front and back proximal joints may be 'adapted in time, before the scrubbing operation, during the scrubbing operation, and after the woodwork. The meeting is transported to the processing room. Slope H and 'must understand' *: In the embodiment, the scrubbing chemistry front and back sides can be used, and the same chemicals or discs can be used after cleaning and/or drying the wafer front side for 70% scrubbing operation. Scrubbing chemicals and chemical cleaning and drying of the wafer front side with crystal "face legs, and this is enough to substantially reduce the possibility of cross-contamination of wafer front side l〇2a due to scrubbing chemicals. Once front and back After the proximal joints 11〇a and 11〇b have finished cleaning and/or dried the front and back sides of the wafer l〇2a and 1〇2b, the front and back arms 11a and 112b are respectively used to connect the front and back proximal joints 11 (^ with 11 〇 b transport out of the processing chamber In an exemplary embodiment, the brush 122 is mounted on the center of the brush that is fixed to the rotating shaft. As shown, the outer surface of the brush 122 is covered with a plurality of knots 124, at During the scrubbing operation, it is brought into contact with the wafer back surface 1〇2b, and the contaminants 145 from the wafer back surface 102b can be cleaned. * FIG. 2B is a scrubbing of the wafer back surface 14 with a brush 22 according to an embodiment of the present invention. !255209 ^^ is in the front and back near the joint When the IWa and the head 〇b are adjacent to the wafer ^, the back side is close to the positive droplet of the wafer (2)', so the scrubbing chemicals are designed to be able to pass through the fluid population. 134 12! 俾, B below the flow ^ tf ^ 曰 round back 1 coffee 'send the brush 122 to the wafer 102: L 3ί assumed initial position. In this way, brush + 122 in the near: diameter. During the dry period, it will not interfere with the front and back near joints and 110b, the scrubbing chemicals 121 are supplied to the scrubbing interface, and the scrubbing chemicals 121 are used to scrub the crystals. At a later time, it is possible to remove contaminants 145 by scrubbing and rinsing the back side of the wafer 102b Ϊί 月 lion. Then, when the brush 122 is applied and filled with DI water, it will be able to pass the brush (TTB). And >, the sun and the moon 102b' can remove the scrubbing and any contaminants 145 remaining on the wafer back. Of course, it must be noted that although in the example shown The brush (TTB) will scrub the chemical 121 onto the wafer on the back of the job, but not in the _ 'The scrubbing chemical port 121 can be introduced into the brush 122 and the backside of the wafer by any suitable means (for example, mounted on the arm and designed to be applied to the contact boundary _ coating nozzle, bit) Coating nozzles on the outside of the diameter of the wafer, etc.) 15 1255209 In one embodiment, the 'dilutable implementation can be used as the scrubbing wafer backside _ Γ' can have the desired concentration. Completion of the ϋ wafer ms1 1J when using the same chemicals as the backside cleaning chemicals or “3 ii ization of the 121 compatible chemicals to clean the wafer front i〇2a, any 揍 needle: ϊ wafer The penetration of the front side is both during the subsequent cleaning operation = causing cross-contamination. Further, depending on the application, a different concentration can be applied, which can be used as a scrubbing chemical port 12 to promote the contaminants 145 on the back of the wafer. In one of the examples, in another embodiment, the concentration of ® is similar to that of the coffee: as long as the chemical applied in the module is chemically compatible (eg buffer solution (4) with citric acid, oxidizing agent ( Η2〇2) can be used in any other chemical embodiment suitable for removing contaminants (4) from the crystallographic surface to make the mat 122 form between scrubbing and rinsing operations, and up to 4 rpm. Speed rotation, and a better range is about 2 () η 4 between the job and the best range is about 25 〇 r ^ ^ ^ · · · ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ] = 'eight and / Jit range is about G · 7 to L 5 liters / minute, and the best yield is _ towel 'scrub operation _ the scrubbing chemicals ^, and the best range is about G. 7 liters In addition, it is formed to rotate at a speed of between 3 and 3 revolutions per minute during the scrubbing and rinsing operation, and more preferably between about 2 ί 30 RPM and preferably in the range of about 1 〇 RpM. According to the actual system, the fresh gamma escaping _ (m) Λ === has any surface contour and in the embodiment, the surface is thousands of months However, the shirt _ real off towel, Xian is suitable for processing the back of the wafer r〇2t 16 1255209 t material H into the brush 122 (for example, nylon, mohair, Lin has a whole material of the heart 1 field formic acid S cylinder, high density excitation, glass Lidex (check-up), poly, formazan, compounds (such as IC1_ (Luodale) grind, etc.), etc.. In addition, in the other two cases, 'the brush 122 is formed to be removable and A disposable brush. A few 々ir, the tea is shown in the following, from the scrubbing of the proximity cleaning and/or drying system 100, the cleaning of the system according to the present invention is carried out. And/or dry crystal "front 1G2a and crystal, f = w when front and back near joints move along the direction 144 of the wafer 102", then use the front and back meniscus 150, 152 and hunt from the front With the back side joints 11〇a and u〇b cleaning and /> round front and back sides l〇2a and legs. As used herein, will define the joint between the two joints 11〇a and the wafer front side i〇2a Part of the area T: body, 1PA vapor, etc.) is defined as the front side of the same way, using the face cleaning chemicals, if If the DIW produces a back meniscus 152. The milk is then seen in Figure 3A. 'With the front and back arms ribs and the 112 proximal joints moving in a vertical manner, the joints and the garments are closely adjacent to the corresponding wafers. The front side and the back side 102b. Therefore, when the front and back proximal joints 11〇a are moved to the assumed position adjacent to the drum 108 in the direction ΐ44^_, the near joint l〇a can be started. Moving perpendicularly to the ll〇b system to closely adhere to the front and back of the wafer. We must be able to maintain the corresponding frontal liquids 150 and 152 on the front and back sides of the wafer 102a and _. The "closely close" referred to herein may be any distance from the front and back sides 102a and 102b of any distance. In one embodiment, =110a and ll〇b are each moved to the front and back of the wafer _ spot 1 〇 2 =, 0.1 mm to 10 mm, and the wafer processing operation is performed, and preferably the front and back sides are stolen.职.5mm to 4 5 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫 曰曰囫: Can be moved up/flat as needed. However, we should crystallize "nG2 and squat, and the frontal fishshake will be pulled for a month/Yuhan/Happy Days W L to move to the edge of the wafer. Also, ^ can be moved from the center of the wafer 102, where the joints 110a and 110b can be 110b washed by the individual front side joints 110a and the back side joints and the dry wafer front and back 1G2a Produce a clear extension to the edge area. The central region of the Japanese yen 102 and the near joint can be changed by the method of changing the frame cleaning and/or dry diameter of the system 100 to generate any suitable enthalpy method. It is formed on the front side joint 110a i曰曰曰m2 = and the back meniscus 152 is formed on the back side joint 110b / the round front surface and the # surface meniscus 15G and 152 in the cross crystallization and := When 14 = 2b, the front and back cleaning mouths are applied correspondingly, and the surface of the wafer is washed and/or dried on a monthly basis to remove contaminants and fluids from the front of the wafer, and above the Japanese occupation. In one embodiment, the mouth is rotated by the drum; the rotation of the b-day 102 of the month is used to move the unprocessed wafer area to the front and back proximal joints 11〇 & and u〇b. - It can be understood that the rotation of the roller 108 causes the rotation of the wafer 1 〇 2, so that the wafer front and back 1 () 2a and the entire surface of the leg are substantially allowed to be cleaned and/or dried. As described in more detail below, in the operating towel, by applying and removing isopropyl alcohol (IPA), deionized water (DIW), and the front side washing chemicals applied to the front side of the wafer, and applying thereto The front and back proximal joints 110a and 110b of the wafer back side 102^ will be able to remove contaminants and fluids from the front and back sides of the wafer 1〇2& and 1〇2b. ^ ^ 18 1255209 However, it must be understood that in one of the different fronts can be used separately, depending on the application required, l〇2a. According to the library, two applications are applied: the front side and the back side of the wafer are different from each other; the 拄 拄, the main i + u冢 mountain is also close to the front and back of the sun circle 102a 盥 102b wash or dry _ relative local ' Any suitable alignment and wafer service succession is shown in Figure 3A. The front side of the wafer, the front side of the front side of the front side of the u〇a, lG2a is partially liquid. 46 4, ^ ^ month joint 丨 1 the front end of the uranium edge The partial wafer back surface 102b is covered by the surface mask 121 and the contaminant 145. However, the front and back and the trailing edge appear dry. ‘ is defined as the £ field between the proximal joint and the surface defined before the meniscus = □. Similarly, the area between the wafer surfaces behind the back surface of the proximal joint. ~ 疋 H疋 in 4 ~ The general person of this skill must understand that IPA influx can be any type of grievance, for example, IPA vapor of IPA in vapor form using N2 gas. ^ Several embodiments of the invention have been described using the Diw, but in another broad, any other suitable fluid capable of achieving or facilitating wafer processing, such as otherwise purified water, may be used. Cleaning fluids, etc. In one of the examples, the following describes the proximity of the front and back of the wafer to the brain and the drying and/or drying of the brain: the front cleaning chemical influx and the IpA influent are applied on the wafer front side 102a, thereby limiting Any liquid 146 above the wafer front side 1〇2a and droplets 121 of the scrubbing chemical 121 are mixed with the front cleaning chemical influent. At this time, when a front cleaning chemical and an influent such as DIW are applied over the wafer front side 102a, an IPA influent will be encountered. Therefore, the applied front cleaning chemical and the influent system such as DIW together with the liquid 19 1255209 121 defined on the front side of the front side of the wafer are present in the front side joint _ and the crystal = domain, thus forming a front meniscus. i5G. Therefore, the front side and the scrubbing chemical m are substantially the same as the liquid above the front leg 146 ^ J t Ϊ front side joint U〇a sweeps the front side of the wafer _, the front side bends and removes the fluid, so the front side bend Liquid = is washed in the area of the front surface 102a due to the movement of the front meniscus 15 ,, and is washed or dried. In an embodiment, the HF offering, the inflowing material, and the i-round back coffee, which form the back meniscus, are closely related to the waste liquid outlet. The wafer back side 102b removes any fluid or dirt located on or near the back side 102b. As shown in FIG. 3A, as shown in FIG. 3A, it is believed that the analysis of the wafer front or side 101 and the legs will enable the wafer to be found. The presence of residues (such as HP residues) on the front and back posts and above the legs. The oyster liquid is also known as the frontal fish. The Af-w 仗 basket is on the front of the local fish: round; the wafer on which the surface was previously is the following m Tian, 2, +U, 102b It should contain the remnants of the temple. The residue of the Hall below (4) is due to the cleaning or cleaning of the front and side of the wafer 102a and the surface of the wafer. The more the chemical is washed, the more (4) the residue. Therefore, the moon is not in step-by-step processing of the wafer front scales and 1 (; 2b = ^ ^ =

:5ΐ« IPA, the state of Wei Jing and money. Fig. 3B is a diagram showing the front side of the wafer being cleaned and/or dried by the near joint according to an embodiment of the present invention. The portion of the wafer front surface 1 〇 2a defined at the front end of the front edge of the front side proximal end 〇 〇a is shown to contain droplets 121 of the scouring chemical 121, contaminants 147, and liquid =1. It must be noted that the liquid 146 is any liquid that remains on the wafer front side l〇2a after any previous wafer processing operations (eg, 1匕+ mechanical planarization (CMP), etching, etc.). According to an embodiment of the present invention, once the front proximal joint n〇a is moved to the front end of the wafer, the fluid inlet and the enthalpy will be positively corrected. Introduced into the front side joint, the front side meniscus 15 接触 which is in contact with the wafer 102a is produced. At about the same time, from the front side of the wafer, the liquid 146, the liquid droplets 126 of the scrubbing chemical 121, and the contaminants ～4A are exemplary front side joints 〇a according to an embodiment of the present invention. Above the empty entrance, it is designed to almost simultaneously extract the different types of two bodies from the f = of the rounded front face 102a and has a plurality of outlets, which can clean and/or dry the crystal front Job. 110a positive self-cleaning chemistry 154 wire front close joint = 曰 ^ straight line, can be designed as a rib to turn liquid (10) above (10) to the front of the Qing dynasty population 154 is 158 sets and designed to be pumped out Excluding the contaminants and the isopropyl alcohol (ΙΡΑ) inlet 156, which is limited to the extraction outlet, and the extraction outlet 158, is adjacent to the meniscus. In the embodiment shown, the front side is made. The area within the elliptical path of the evacuation exit 158 is shown in Fig. 4A, which shows a simplified top view of a waste ll〇a according to the present invention. I 】: The number is close to the front L; 5r ^ ^ n 160 ^ Spear, exit 158. In one of the examples 21 1255209, the rinse inlet 160 is formed to pass the DIW influent onto the wafer front side 1〇2a to enable rinsing of the wafer front side 102a. According to the embodiment shown in FIG. 4B, the front meniscus 150 defined between the front proximal joint 110a and the wafer front surface 110a can be compromised into two concentric meniscus, namely the inner meniscus 150a and the outer bend. Liquid level 150b. In one example, the inner meniscus 15〇a is produced by a solution of the front cleaning chemical and the DIW, and the outer meniscus 15〇b is formed by the DIW influent 160.

The wind must be noted that although embodiments of the invention include a plurality of front cleaning inlets 154, extraction outlets 158 and 158, DIW inlets 160, and IPA vapor inlets 156', but in another embodiment, Embodiments of the invention may be implemented as at least one front cleaning chemical inlet 154, at least one IpA vapor inlet 156, at least one DIW inlet 160, and at least one extraction outlet 158. In the case of the back proximal joint 12〇b, at least one of the pA helium gas inlets 156 can be followed by at least one of the outlets 158, and at least one of the evacuation outlets 158 can be adjacent to the DIW inlet 16〇. IPA - vacuum - mw alignment. Those familiar with this technique must note that other types of alignment can be used depending on the desired Crystal® treatment and the type of wafer cleaning and/or drying mechanism to be improved, =A-DIW-vacuum, DIW - vacuum - IpA, vacuum - ιρΑ - foot f. In the preferred embodiment, the 'IPA-vacuum-to-DIW alignment system is used for smartness and movement, and the moving position is on the f-side and on the back side of the wafer 102b. In another embodiment, the front and back sides of the wafer may be washed and/or dried using a de-vacuum alignment. , 'The age of the four (four) is: as long as it can produce money lion meniscus and control DIW inlet 16 〇, IPA vapor inlet 156, extraction outlet 158, the front cleaning chemical surface cleaning chemicals population is any suitable The pattern is disposed on the upper surfaces of the front and back proximal joints 11a and 11()b. For example, 2 ^, cleaning chemicals into the sputum, IPA steam π, pumping out the exit, and returning to the entrance, 2 2 implementation = in the 'based on the required near joint frame _ with gas export, DIW inlet and / Or withdraw the exit. Furthermore, 'we should understand that the front and back joints can be used with Congcong. 22 1255209 ^The population and export of any number and face, and the person σ and the exit can be in any proper alignment on the front and back. Furthermore, by controlling the amount of flow applied to the front side of the wafer 102a and the duty application ϋϊ = rffi and the back meniscus 150 and 152, any suitable solution is provided: as long as the front and back sides can be bent The liquid level (9):, 152 remains stable, and the position of the inlet and the outlet above the front and back heads 110a and li〇b can be changed, and the size can be changed. ΒΒ々ίΐ, the person familiar with this skill must understand: I think: this hair 曰=ΐίί清, and, or (4) suffocating enough forest to flush the liquid wash, round the front and back to i (10) Next, the = face and back faces 102a and l〇2b. Innocent, Yin Ri Rizheng see below for a simplified cross-sectional view shown in Figures 5A to 5B, the present invention - the actual side of the scrubbing crystal Bt face, clean and dry wafer front The situation of the test. J; two sides: ,, shot, after the formation of the copper metallization line, is in use; J ^ mixed 5 liquid to remove the residual copper residue remaining on the front legs of the wafer; ΖΙΐΙιΤΛ 10a2a„ Feng R handle green tree 1 ° Any liquid that saturates the front surface 102a of the round, and can be copper residue, leaving a clean and dry appearance, medium-to-small, and I think: if the wafer is analyzed immediately = this is enough Precipitated HF residue. So 'depending on the application and expected fruit 5 = using DIW to rinse wafer front side 102a or wafer back side = any U = HF residue. I think: in most applications, ==== HF residue. For example, in certain applications, particulate debris remaining between layers does not cause any defects.

The DiW influent rinses the front and back sides of the wafer, so it is not utilized. Figure 5A shows a 1Q2a cross section of the wafer being cleaned and dried according to an embodiment of the present invention. As shown in the figure: Force: Near the front end of the front edge of the front edge of the wafer, the front side of the wafer 1 〇 2a local system = liquid 23 1255209 body, rub, liquid 121 droplet 121, and contaminant 147. At the proximal joint u〇a, the front meniscus 150 is thus moved in direction 144, and the wafer front side 102a is shown to be cleaned and dried. The front side of the wafer 1 〇 2a, which is defined at the trailing edge of the front side near the joint l10a, appears to be dry. That is, after processing a portion of the wafer front side 102a, all of the body 146, the contaminants 147, and the scrubbing chemical 121 are removed from the front meniscus 15 to leave a clean and dry wafer. Front side 102a. However, in the example, we believe that the front surface of the previously cleaned and/or dried wafer may contain the residual residue after the drying of the front surface 1G2a of the crystal 81. Due to the positive cleaning chemicals, the back cleaning chemicals, and the compatibility with the cleaning, it is possible to significantly eliminate the negative cross-contamination of the wafer front side 1〇2a as in the prior art. influences. A simplified cross-sectional view of the front side of the wafer having a plurality of metal lines (10) during cleaning and during cleaning of the wafer front side 102a according to an embodiment of the present invention. The contaminants 147, liquid 146, and scrubbing drops 121' of the leading edge of the head position are removed by the movement of the front side joint. However, in one of the examples, we believe that: the residue of the precipitate will be detected at the trailing edge of the joint ll〇a. In the ΓίΓ, the front near joint 110a uses the ® and flows into the object. Any kind of liquid or smudge on top of the enamel, according to a yoke example, when the front side 102a of the wafer is dried, the person cuts, forms, and remains in the front of the wafer. On top of the cockroach. Fig. 5C is a plan view of a plurality of layers formed after cleaning and/or aging according to an embodiment of the present invention. , simplification of the frontal brain of the emulsion layer 103, a partial enlargement of the cross section of the chemical ϊ 211 211 _ _ 钱 an anal cleaning material surface cleaning, 'month wash chemicals and back chemicals are HF and DIW solution. 24 1255209 However, the type of application, the positive cleaning chemicals and the back cleaning chemicals may be the same or different. According to one embodiment, the concentration of HF in the backside is in the range of about 10:1 to 1500:i, f ΐί, about 2G: 1 to the range between 1 and 1, and the best The range of about 5〇: 1 The concentration of #HF in the kneading cleaning chemicals is about 5〇: 1 to 10, _: between the circumference, and more preferably about 1〇〇: i to 1〇〇 〇: The range between i. Referring to the flow chart shown in FIG. 6A, which shows the method carried out in the near-cleaning cleaning and/or drying system according to the present invention, starting from operation 6〇2 'where scrubbing chemicals are used Scrubbing an example towel in the back of the wafer, the scrubbing chemistry is preferably a concentration of about 1 with a concentration of about _:1. According to one of the implementations, the front side of the wafer and the back side of the wafer are scrubbed in the same time. In the second layer ^04, 'use the front surface between the front side and the back side of the wafer to clean and/or dry the front side of the wafer and the back side of the wafer. ^This side> monthly chemical supply to the front The joint and the backside cleaning chemical port for the sc sc l l using hf and _ mixture cleaning and / or dry bomb i according to 3 and expected results, the front and back of the chemical 5 F / Chen can be the same or Changed. In the JL, the processing of the mixture of the processing of the mountain in the sleeve and / or the dry, == clothing surface, if there is a job, the line of work, the line of the crystal, the flow chart shown in the figure, will be able to Step to understand according to this (four) in ==' and in which - a brush: medium, the initial limit. In: the brush of the lower wall of the processing chamber of the example dry module ^ ^ = 2 connected > after monthly washing and / or drying, in the operation 6 〇 2c, the scrubbing chemicals pass: wash = round g, 25 1255209 In one example, scrubbing chemicals are passed through the brush. Move the direction and hold the cleaning solution ^, make the brush rotate and carry out the fox-shaped material 曰 ΓΤ ΓΤ 日 其 其 其 其 在 在 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 操作 任何 任何 任何 任何 任何 任何 任何 任何After removing the contaminants from the back of the wafer and the liquid 2 ® clothing, any example t above the back of the crystal 81 removes the _+ from the crystal surface #° in one of the ❿ ===== The lower wall of the module. In this way, the brush mechanism is not the same as the operation of the joint. The scrubbing chemistry will have minimal negative impact on the front side of the wafer due to the substantial elimination of the potential for side effects from the prior art. The solid surface is shown in accordance with an embodiment 2 of the present invention as a frontal meniscus and a meniscus. Depending on the application, the same chemicals are available in the same or different concentrations. In the case where the HF 盥 ^ 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和 和The liquid level is formed between the back proximal joint and the back surface of the wafer. Thereafter, the front surface and the front surface of the joint are divided into w wheels, front and back. The mouth is made of compatible scrubbing chemicals and front and back. Eliminate the negative effects associated with cross-contamination in the module. In addition: __ waste machine can be used to remove chemicals and front and chemicals, 26 1255209 can simplify the system. According to the invention - implementation For example, the scrubbing and proximity of the present invention can be incorporated into a wafer processing system, for example, in a side processing chamber, a search system, a chemical mechanical polishing (cmp) system, and the like. Pre-set = round front and / or back, only in the system of the invention 5: 5 ^ (D) 糸, physical vapor deposition (pVD) system, electrochemical deposition (5) ϋ ϋ deposition (ald) System, lithography processing system (including coating machine tray) module, etc. Post-processing the back and/or front of the wafer. A fresh and delicate thing to note is that it can be used in any other system, such as rotating, rinsing, and Drying mold, ^ close steaming group, rapid heat treatment secret, side secret material) wafer pretreatment. In an exemplary embodiment, the cluster wafer cleaning equipment can be cleaned and cleaned with Bai Ming scrubbing and/or Dry material, system, and cleaning equipment by means of control station = "moving" method. For example, the lining washing equipment system includes the scrubbing proximity cleaning and / or drying module, and the receiving station. The wafers originally placed in the sending station are transported to the scrubbing and/or drying group. The scrubbing cleaning and/or the Qianchi towel is scrubbed and/or dried and then dried. The wafer is transported to the receiving station for temporary storage. It is understood by those of ordinary skill in the art that the implementation of the cluster cleaning apparatus can be performed to perform a plurality of different substrate preparation operations (eg, cleaning, engraving, grinding). Light, etc.) ” Figure 7Α A simplified cross-sectional view of an exemplary proximity substrate preparation system 1000 in accordance with an embodiment of the present invention. System 1_ includes a process t 1〇4, a tumbler t-roll 108 defined therein, a fluid handling system, 1 〇 6, front and back proximal joints i 与 and 110b, actuating element 114, and system controller 116. The processing chamber 1 〇 4 is placed over the fluid handling system 106, with the front and back arms n2a Do not attach the front and back proximal joints 110a and li〇b to the actuating element U4. In an embodiment 27 1255209, the actuating element 114 is a motor. 1〇8 is formed to be bonded to the wafer 102 and to the wafer 102. Around the rotating side: In the embodiment shown in FIG. 7-8, four rollers 108 are implemented which have the function of a stabilizing member and are formed to be bonded to the wafer 102. The remaining halo 1 8 is formed to rotate the wafer 102 about the direction of rotation 140. When the wafer 102 to be processed is transferred and replenished into the processing chamber 104 by removing the two stable rollers (10) and away from the wafer 1〇2. After that, J will return to the assumed initial position and interface with the wafer 1〇2 to define the front side 143⁄4 face joints 11〇a and u〇b in the processing chamber 1(10), the front and back side joints j Kanto is adjacent to the edge of the wafer 1〇2. In the embodiment, the contaminants 147 and 145 applied by the cleaning crystals f f are respectively dispersed on the front side of the wafer 102a #t^ 102b and the liquid droplets 146 and 146' before the wafer preparation operation. Already produced. For example, 'liquid droplet 146 is any liquid that has remained on the wafer front side l〇2a after any prior rounding operation (eg, chemical mechanical planarization (CMp), etched). The sliding mechanism will be able to pull out the fluid handling system #10^ from the system. In one example, the 'fluid handling system hall consists of two components, so that the flow control element is formed to include a plurality of flow ΞίίυΓΐ for preparation The wafer 102 is used (for example, cleaning, etc.), and the waste/venting element includes a waste liquid processing unit, and the bean is designed to be a fluid, waste liquid, residue, and The processing chamber is shun/middle, and in the case of the towel, the chemicals stored in the flow control system can be mixed into an appropriate concentration. In the case of the towel, The unused chemical required to produce the wafer surface is an unused mixture of di w:θ. According to an embodiment, the system controller 116 can utilize the electrochemical: product to monitor and maintain the desired concentration. Near the substrate preparation process, 28 1255209 the same or different chemistry The product is supplied to the front side of the joint and the back side. ΐί?2: This T type will supply additional chemicals (eg use & as steam). As used herein, a portion of the region between the vicinity of the wafer u'a and the wafer front surface 1 () 2a, 1PA vapor, etc.) is defined as the front-surface 150. The same surface cleaning scale, 1PA steaming, etc. produces back meniscus (5) round this it / such as chemicals, dirt, and brain and crystal from the front of the wafer, ^ month = lG2b, the liquid is pumped up, via the connection The tube is discharged from the front side and the back side in the line of the waste liquid outlet in the front side and the back side of the wire. After that, the waste material is transported to the waste liquid unit (for example, the collection and removal tank) and the receiver is turned over from the collection to the factory drainage system. Once the positive ς =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 =1 ^ While f is the front side, the face joints _ and 11% are transported out of the processing chamber 104. - Those skilled in the art must understand that although in the embodiment the actuating element is a motor 'but in different actual closings, the actuating element n can move the elements of the front and back arms 112a and 112b . Again... Understand: Different mechanisms and engineering impulses can be implemented = February brew 112b and thus the front and back proximal joints 110a and 110b will be able to enter and exit the processing chamber 104. In the example of fiscal month b, when the front proximal joint _ and the rear proximal joint _ b direction 144 are horizontally moved to the assumed respective positions, the position of the center of ^ 102 can make the front proximal joint brain vertically move closely. Adjacent to the front side of the wafer 1 () 2a and the rear side joint U () b is moved vertically to a position closely adjacent to the wafer back. We must understand that the front side of the wafer is maintained on the front side and the back side of the job. The liquid surface 150 and 152, the "close proximity" described here can be any distance from the front of the wafer. The appropriate distance from the back side l〇2a and l〇2b. In one embodiment, the connectors ll 〇 a and 〇 〇 b are each moved to a distance of about 29 1255209 0.1 mm to lOnm from the front and back of the wafer to start the wafer processing front ίί=, about ° 5.2:: , then = two in the = ^ two = (10) direction 143 horizontally. In the absence of the 径 102 曰曰 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 102 For example, it is possible to apply the 3 嶋 乂 乂 乂 乂 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = Figure 9D, Figure, and I must understand that the front and back proximal joints have a, /, various architectures that are capable of performing the processes described herein. Blowing ^: ^^式' As shown in Fig. 7A, the front and back surfaces and the meniscus 150 and 52 are known to cross the front and back sides of the round and the back side by 1〇% and 1〇2b to make the wafer surface drop out of school'俾 Clean and/or dry the wafer surface. After that, there is no need to make ^ 1〇2a ^ 1〇2b 5 set * θ0 ® clothing secret. Fresh, correspondingly apply front and back cleaning t to the front side of the wafer to move a and deductive coffee, and then clean and remove contaminants 147 and 145, 146, and just from the front and back of the wafer 2a|4 l〇2b ,, 2 Babe clean and / or dry wafer surface. In the embodiment, the rotation of the crystal lens 1 2 caused by the mouth of the drum is used to move the wafer area that has not yet been in the king (for example, cleaning and = no) to closely close to the front and back proximal wrists. The disk, leaving a substantially clean and dry wafer area that has been moved and processed. [In one example, a second round front surface 〇2a is cleaned using an HF having a concentration of about 10 〇:1. In another embodiment, the concentration of HF is about 1 〇〇〇 ••丨. Of course, = you are interested in: as long as the chemical used to prepare the wafer surface in the module is chemically compatible, any suitable surface from the wafer 1 〇 2a and wafer face 102b can be used. Chemicals that remove contaminants 147 and 145, liquid droplets 146 and 146 (eg buffered oxidizing solution (B0E), HF and citric acid, HF and oxidized ^ 30 1255209, (氐〇2), standard cleaning solution i ( SC1), standard cleaning solution 2 (SC2), ammonia' surfactant, acetic acid, citric acid, combination of acetic acid and citric acid, acetic acid, citric acid, combination with surfactant, ammonium fluoride, mixed copper cleaning Agent (MCC) 25 〇〇, MCC3000, a mixture of sulfuric acid and hydrogen peroxide, etc.). ^# In one of the examples, the chemical can be implemented into any fluid having surface-preparative shells such as a half-washed solvent which generally has a low surface tension, and the like. Again, it must be understood that, depending on the embodiment, the same front and lunar chemicals may be applied to the front and back of the wafer, respectively, as desired for the application. Applications, front and back cleaning chemicals can be compatible chemicals with the same or different / chemistry, or front and back chemicals. The general person of the technology must understand that the front and back sides can be used to move the crystal 8^1G2b to perform the same thing. In the example, the wafer surface is being cleaned and/or the close-up 102 is rotated. ^ The front side of the square wafer is kept in this state, and when the wafer is rotated from a H〇, the front side joint 110a starts to be the center of the front side of the day 0. w with liquid droplet J. _日日0 front leg and / or dry operation of the face near f1 iiGa when it is finished cleaning 143 movement, will be returned from the front two pounds, in the front near joint ll〇a rounded in the direction = ==== Wafer front side 102a produces a seed crystal 102a. In detail: the clean and dry wafer front side of the edge of 2 0 102 leaves a substantially dry wafer. 31 1255209 Ιΰ ί 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗 洗==中中;;? With the back near joints u〇a and _ using 102b to remove It and 152, respectively, from the front and back of the wafer, the front side of the disk, the f body, and the side film. In particular, isopropyl alcohol (IPA) is removed from the front side of the wafer and removed from it, and it will be understood that it is applied to and removed from the back side 102b of the wafer. The whole: ηϊ's rotation will cause crystals The circle 102 rotates, so the real two === faces 1G2a and 1G2b are cleaned and/or dried. = Cost vs. first rinse wafer surface

From the embodiment of Figure Ic, the 'frontal joint is applied along the direction (4) i_Si==/a® edge', but it must be noted that it can change the cleaning and dryness of the system. Closely adjacent to the front of the ^=================================================================================================== In the simplified cross section of "&^^^^^^: there is no contaminant 147 and liquid droplets (10). ί 限定 is limited to the front near joint before cleaning and / or drying The liquid droplet is still partially contaminated _, : I is defined as the area between the proximal joint and the surface of the wafer defined before the face of the meniscus 32 1255209. Similarly, the trailing edge of the proximal joint is near The area between the joint and the surface of the wafer defined behind the meniscus. In an exemplary embodiment, the following describes the cleaning and/or drying of the front side of the wafer l〇2a. The IPA influent is applied over the wafer front side 102a. In this manner, any fluid present on the wafer front side i2a will be mixed with the front cleaning chemical influent. At this point, when a front cleaning chemical is applied When the influent such as the mouth and DIW is above the wafer front i 〇 2a, the ιρΑ influent will be encountered. Therefore, the applied front cleaning chemicals and DIW influent systems together with the liquid droplets 146 (in a particular embodiment) , for the liquid film 146) with the backside chemical droplets 146, and one The front surface of the front joint 11 〇 a and the wafer front surface 1 〇 2a is formed, so that the front meniscus 15 形成 is formed. Therefore, the front and back meniscus 15 〇 and 152 are the corresponding wafer front side 〇2a and a fixed flow of fluid on the back side of the wafer 1〇2b and liquid droplets 146 and back chemical droplets 146 over the front side of the J wafer, while the shellfish are simultaneously removed. According to the present invention In one embodiment, once the front side is moved close to the front side of the wafer, the front side chemical is applied to the front side of the wrist to create a face with the wafer face 15G. At about the same time, The liquid droplets 146 and the contaminants 147 are removed from the wafer front surface l〇2a and are removed. <Up* When the wafer front side joint 11〇a sweeps the wafer front side 102a, the front side bends, the liquid is 1 50 series In conjunction with the front proximal joint _, in this way; · due to the application of the ground, the f liquid level and the removal of the fluid, the front meniscus (9); the area of the front side lG2a will be flushed by the front meniscus 15 The round front hall can form 5 and %=: the face cleaning and drying lions Without the use of round = 331,255,209 times before a preparation operations

, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In this embodiment, any fluid, contaminant, or helium gas located on or near the back (four) 2b can be removed by a waste liquid outlet pair close to the back leg of the wafer. According to the embodiment, as shown in Fig. 7D, we believe that if the object of the temple is intentionally left, the analysis of the front and back of the wafer and the _ will reveal the crystal, the front and back legs and the lion above. The presence of a sinking residue (eg, fluoride ions produced by exposure to watery HF). That is, we believe that if we choose _, the front and back meniscus 15 〇 and 152 lining of the wafer, the part of the crystal and the surface of the crystal _ must contain the remnants of the temple. But hey, there is no liquid in the quality. As described in detail below, removing the dirt and fluid from the wafer front side 102a and the wafer back side 102b, or from the layer formed above the wafer surface, will result in a residue of the pedestal, and A chemical reaction is used to clean and <or dry the front side of the wafer with the front side 102a and 102b of the cleaning chemical or the back side of the monthly wash chemical. Therefore, the embodiment of the present invention is designed to: if added, the selected activity is to use the front or back cleaning chemical influent and lpA inflow, after washing and drying, the wafer front and back can be made 1 〇 2a And l〇2b = in a clean and dry state, or can deliberately produce a residue of the slab and remain on the front and back sides of the wafer required during the # one preparation operation. Figure 7E is an exemplary front side joint 11〇a = bottom view in accordance with an embodiment of the present invention. The front proximal joint 11 〇 a shown has an elliptical outer shape with a plurality of outlets and inlets. The plurality of outlets are designed to round different types of fluid tit 1 above the front surface 102a, and the plurality of extraction inlets are formed to draw fluid and contaminants above the circle f ^ 1〇2a at the same time. The wafer front side 1〇2a can be cleaned and dried without the need to use DI to wash the front side of the wafer. The inlet 154 is substantially defined in the center of the front proximal joint n〇a and is substantially straight and is designed to pass the front chemical influent onto the wafer front a. Adjacent to the front side chemical inlet 154 is a plurality of extraction outlets 158 34 1255209 designed to remove and exclude contaminants and any type of fluid defined between the extraction outlet 158 and the wafer front side 102a. Again, it can be seen that the plurality of propanol (IPA) is placed adjacent to the exit 158, as shown in the embodiment of Figure 7E, which defines an elliptical path. In the supplemental embodiment, the front meniscus 15 is placed in a region that is limited to the elliptical path of the extraction outlet 158. Those skilled in the art will understand that the IPA influent may be of any suitable type, such as IpA of IpA in a vapor form using a % gas. Similarly, although the number of the invention has been described One embodiment uses DIW, but at another m, can use any other suitable water that can achieve or facilitate wafer processing, such as H-purified water, cleaning fluid stock. Furthermore, we understand that as long as the front and back meniscus can be stabilized, not only can g = and π be placed on the front and back proximal joints, but also the size can be changed. - The embodiment is in a solution that makes the limb cleansing chemicals with the back of the wonderful 3 cleaning chemicals with the backside chemicals for HF and DIW. = However, depending on the side of the surface, the concentration of the HF of the chemical cleaning surface cleaning chemicals can be the same or different. According to the range between 10: , ^ 15〇〇 · 1 to _: 1, and the best range is about 50: 1 ιΐΐ / HF concentration in about 5G: 1 to 10, _: lower clamp = The ground is between the range of .1 to Cong··1. A simplified top view of 显示, shown in accordance with one aspect of the present invention, during the fabrication operation shown, the wafer is being wound around the edge of the wafer, and the proximal joint 110 is brought along the direction 143 from the edge of = 1 〇 2 . As shown in the figure, when the f liquid level 15 〇, acting on the meniscus 150W I i can be applied by applying a tip containing HF having a concentration of about 6 · · 1 (4) 11G wire thickness _ ^ angstrom inherent 35 1255209 ^ Layer 103. In the present example, when it is substantially defined above the oxide layer chamber in the meniscus 15 〇, the meniscus can be over the im Γ to remove the intrinsic oxide layer. At almost the same time, the extraction inlet ’ in the proximal joint 110 is not only excluded from the surface of the wafer; 1 has an oxide layer ιω', so that the wafer front surface 1G2a of the inherent oxide layer is left. In this way, it is possible to go from above the wafer surface without having to borrow "$ for rinsing the wafer front side 102a".

StrT uses different preparation operations for subsequent preparation, so that not only the cost associated with the front side of the Japanese yen, but also the associated processing time is eliminated. (d) In the case of 'after removal', the front side of the wafer will be substantially free of contaminants and more than the surface of the refining crystal®, and the secondary-preparation operation will be carried out (in the case of different embodiments, Leave on the surface of the wafer: a single layer of the upper layer) protective film (such as ΒΤΑ) '俾 can protect copper from thirsty rot. Thus, embodiments of the present invention are capable of removing, 4, and/or drying wafer surfaces with highly concentrated chemicals in the case of performing sub-substrate preparation operations. 8Β is a simplified cross-sectional view of the exposed wafer front side 102a after removing the intrinsic oxide layer 1〇3 according to an embodiment of the present invention, showing the wafer front side 102a of FIG. 8Α. It can be seen that the oxide layer 1〇3 of the ίΪί, f has been removed by the proximal joint (10) and the meniscus 15 从 from the center of the wafer, 102a across the edge of the front side of the wafer. In one embodiment, when the solution of the ® is removed, the oxide layer 103 can be removed by entrainment of all of the generated liquid and particles by being defined in the proximal joint 11〇. In this way, the use of chemicals, by close proximity, will remove the inherent oxide layer and remove solid contaminants and liquids from the front side of the wafer leaving bare, clean, and/or dry crystals Circle 2a. In this manner, the next wafer preparation operation can be performed without first rinsing the wafer front side 102a. According to yet another embodiment, a continuous proximity preparation system is implemented to prepare the wafer surface to impart different properties to the wafer surface. Figure 9A shows the implementation of two parallel rod-type tips to 2I0a in accordance with one embodiment of the present invention, while continuously preparing =. A simplified cross-section of the continuous proximity preparation system 300 causes the mate-near joint 210a to pass through the connecting arm 113 and = two: the head 210, which is fixed to the front leg of the wafer via the arm m and In the f-shift L 2 embodiment, the wafer is traversed and processed on the surface without rotating the wafer 102. As explained in more detail below

歹中^ shown in Fig. 9B can be prepared by continuous proximity of the entire surface of the wafer U 1 〇 2a. In the embodiment of the IU positive aspect, according to an embodiment of the present invention, as shown in FIG. 9B, it is possible to chemically process the wafer with two consecutive processes. Out: The wafers on the front of the job show three appearances, almost no area. The region runs as the oxide layer 1〇3 initially formed on the front side of the wafer, at the front end of the front edge of the front joint 210, and

- f The contact of the liquid surface 25G causes the residue of the slab to emerge, and S Γ. The chemical reaction between 歹iT' and the liquid level of the second liquid is 25°, and the formation of the ΐiT's must be sensible. According to the type of wafer preparation operation required, the residue m of the temple may be formed as The rail covers the shape of the film. ^ w (10) and thus the invention can be continuously prepared by using two rod-type proximal joints 210 盥 ^ in the following manner. - Start Ϊ : When the # portion 112 moves in the direction 143', the leading edge of the first proximal joint 21 宓 is placed on the front side. At this time, the first chemical and the 1PA infiltrate are produced with the oxidized f L defined at the edge of the front face 1Q2a. The expected chemistry occurs between the oxide layer and the first f liquid surface 250. Should, = produce a precipitated residue m that covers almost the entire area of the oxide layer 1〇3 that is in contact with the first meniscus 25. At the same time, the residue lu of the pedestal is formed from the specific area of the wafer front surface 〇2a, which is left on the wafer front surface 1〇2& due to the chemical reaction or the 37 1255209 prior wafer preparation process. Any liquid in the first proximal joint 210 and the first meniscus 250 is acting on the crystal 1〇2: 143^^, the second proximal joint 21〇b of the meniscus 250 and the second meniscus 25〇, Acting on the front surface 102a of the circle, more specifically, the area of the wafer surface 102a that has just been subjected to the treatment of the first proximal joint 210 of the residue 引起in ίf. At this time, the second chemical of 250 and the influent of 1PA and the residue of the shoal 111 react with the symbiotic and are previously subjected to the first proximal joint 21 〇 and the second proximal joint 2 A desired layer 1 () 9 is formed over the area of the front surface 1G2a. The root case can make the first and second proximal joints 21G and 21G extremely close to each other, and the desired layer 八 (eight) is formed immediately after the precipitation residue ηι is produced. Figure 9C shows an enlarged cross-sectional view of the intervening, which can be used to chemically remove the oxide layer 1G3 and the subsequent chemical reaction to form the desired layer. g = - The area of the chemically treated oxide layer ι 〇 3 of the first meniscus 25G of the proximal joint 210 will change to form a sinking residue m thereon. Our person = part of the oxide layer treated by the second meniscus 25 为 has been converted to a school. However, the area covered by the J-complete face 25G directly below the first-near joint will change as the first front meniscus 250 moves around the crystal face 102a. = The domain is covered by the desired layer 109, and has just been treated by the second meniscus 25, J, and the area of the residue m of the temple has not yet fully converted into the desired layer.夂;^士ΐ ΐί connector 21G and the second proximal joint 21G' are moved to the wafer front side 102a to be removed due to the thin layer of chemical contact with the first chemical

Prior to the desired layer, the removed thin layer can be replaced by the desired layer without the need to rinse the wafer surface with a rinsing chemistry. T bbU 38 1255209, according to the invention, has an exemplary lower view of a single liquid level. We can see that the extraction of the plural and the quality of the human being are self-supplied in the first-near joint layer 3, which can achieve the removal of the thin layer formed by the formation and the positive 2〇2Va. The first contact 210 is implemented to prepare the entire wafer. The front side 102a of the wafer which produces the babe homogeneity is formed by one of the early processes, after the removal of the oxide layer, followed by the passivation of the crystal; the layer = length and the like. For example, it can be passivated and then the active layer is used when the passivation operation is invalid. In an exemplary embodiment, the interface chemical. In the case of b (bta) which is capable of purifying the front layer of the wafer: ίίί=; hunting is replaced by the desired layer. In one of the cases, the above-mentioned Γ Γ 免 免 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧 氧The continuous removal and shape of the chemical in its layer will allow for the removal of the front surface of the Crystal®. After that, it can be formed in the second _ system =, and the layer is moved.

Although the L-joint is stored in the figure, in the different examples of the actual H-jin, the removal of the first and second near-residues has been carried out, and the layer is formed as long as the layer is formed. Connector. In the case of the operation of the king, it is possible to carry out a plurality of continuation with reference to Fig. 1GA, showing the use of two bends 39 1255209 in addition to the embodiment of the present invention, and the desired sinking of the m layer ^ The residue goes to l〇2a. At this time, first, the front side meniscus of the wafer covered by the emulsion layer and the front meniscus 250 generated by the inflow of 1pa, etc., 盥 1Q3 &" mouth and IPA, etc. The second discussion of the inflow of the oxidized 鄕 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面 正面k is a child, and a sinking Jk is owed and the ^2 liquid surface 2M)' follows the first meniscus 250, ίΓ^Γί expectation ί 109. Subsequent to the residue 111 of the pedestal, substantially simultaneous formation of a cross-sectional view of the wafer 102 is shown as a continuous potential = wafer 102 in accordance with the present invention. As shown in the figure, the region of the oxide layer 103 which is processed and dropped is changed, and a region in which Tl ¥li, V Μ is formed thereon has been locally chemically changed. However, when the first vine? ^ When the liquid level 250 moves to the front of the wafer, it is in the first proximity. The area below which is not covered by the first front meniscus 250 will change. The area of the sinker 111 previously treated by the second f level 25G is covered by the desired layer 1〇9. The area of the residue lu of the precipitate which has just been subjected to the treatment of the second meniscus 40 1255209 250' is eight. Therefore, the front side of the joint 21〇 is traversing the heart of the two kings. The desired layer = the rinsing of the wafer without using the rinsing chemicals, there will be a thin layer above the circular front surface 102a and then substantially At the same time, the map i 〇 c is an illustration of an embodiment of the invention; a lower view of the head 3K). I can see that the plural is made; ·=== ? Export 158. In the same way, the number of extraction outlets is said to be 5^== ίΓf4, and the plural 1pa vapor inlet pottery is followed by It mouth ^ Xue Qiaokou 14 inlet is evenly distributed under the proximal joint 31〇 The surface is capable of achieving the removal of the formation layer and the formation of the desired layer. [Note]: Although in the implementation shown, the proximal joint of the present invention includes a number of front faces or a face chemical inlet 154, 154, 254, and 4, the outlet is both 158, and the vapor inlet 156, but in another embodiment, the embodiment of the invention is implemented to at least - a positive chemical population, a backed money Inlet: at least one vapor inlet 156, and at least one extraction ρ 158. Cooked J, the person skilled in the art must note that: according to the required wafer preparation process and ^ improve the crystal wash and / or dry The lion face can be made into other faces, such as IPA - DIW - vacuum, DIW - vacuum - IpA straight space, DIW, etc. In a preferred embodiment, IPA - vacuum - DIW alignment Smartly and efficiently generate, control, and move the surface of the joint and wafer surface In another embodiment, the front and back sides 102a and 102b of the wafer can be cleaned and/or dried using IPA-vacuum alignment. For example, except for the front side chemical inlet, the IPA vapor inlet, and the extraction outlet. In addition to the DIW inlet, in additional embodiments, there are additional sets of IPA vapor outlets, Diw inlets, and 41!255209 or extraction outlets depending on the desired structure of the proximal joint. Furthermore, we should understand that The back joints can have any number and type of inlets and outlets, and the inlets and outlets can be any suitable alignment on the front panel = again, by controlling the wafer wafer = fluid above the moon The flow rate and the amount of vacuum applied to control the front and back meniscus can be controlled to any suitable pattern. 〃 'See below for a flow chart 1100 shown in Figure η, which shows one aspect of the present invention. Method of operation in a proximity wafer preparation system. The method for preparing a wafer surface by using a meniscus to prepare a wafer surface ΐριΐϊ f is used for cleaning and/or drying.曰ΞίΓ In operation, if Lin needs to use the flushing fluid to rinse the wafer=, then the wafer-on-wafer preparation operation is performed on the surface of the wafer. = =, eg, 'will not need to be on the wafer surface. After receiving the chemical, make the book, and reduce the wafer processing time. ... Surface-related formation, continued to see the ® 12 pillow flow _, will be able to enter the method to stay. In operation 1202 towel, using the first meniscus In addition to the thin layer formed on the surface of the wafer, the second joint in the middle layer is de-layered as an oxide layer. Secondly, in the operation of 12〇4: the second to be removed to achieve the desired chemical reaction, Between the formation and the sinking-residue, the method of carrying out the two embodiments of the present invention in the form of a continuous single-rod type will be described below with reference to the flow deduction shown in Fig. 13. In operation 130' scooping the wafer preparation system, except for the thin layer formed over the surface of the wafer, and 吏, the residue of the first meniscus of the near σ junction. The residue of the sect of the temple is produced by the first chemical in the 1304, which is produced by the first chemical 42 1255209 = the expected chemical reaction between the two. n Using the second meniscus of the proximal joint and the sink = in = 1306, forming the desired layer above the surface. In the embodiment, the !t near joint is on the wafer table

Liquid % 桃 Μ Μ — — - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - CMP) Round ί: ί Two-chamber, chemical vapor deposition (cvd) system: surface =::: S surface ί, rational system (including coating machine and stepper) mode: etc. G)) 曰0 month Post-treatment on the face and/or front. Of course, it must be noted that the second, ίί can be used in other preparations, systems, and modules for the preparation of the board (such as dry mouth, core, and dry city group, close to pure system, and residual system materials). Day _ processing. The following diagram will illustrate an exemplary proximity wafer processing system capable of generating a fluid meniscus. It should be understood that there is any suitable joint capable of generating a fluid meniscus - Suitable embodiments are available for use with the embodiments of the invention described herein. Figure 14 shows a wafer processing system 2 in accordance with an embodiment of the present invention. It should be understood that I can support or move using either Suitable means of wafers, such as rollers, pins, flats, etc. System 2000 includes rollers 2102a, 21〇2b, and 2102c capable of supporting and rotating wafers to treat wafer surfaces. System 2000 also includes fronts And in the embodiment, they are attached to the front arm portion 2112a and the rear arm portion 2112b, respectively. The front arm portion 2112a and the rear arm portion 2112b are the proximal joint stage assembly 2112. In part, it is capable of substantially linearly moving the front and back proximal joints 110a and 110b along the radius of the wafer. In one embodiment, the proximal header assembly 2112 is formed to support the front surface above the wafer. Proximity 43 1255209 ^ and ^:;; ^ below the back of the joint to make it close to the crystal shifting thin front arm 2ll2a and # fabric 2ii2b will be able to reach the μ 二 使 近 近 使 水平 水平 水平 水平 水平 水平 水平 水平 水平 水平 水平The position of the circled ίί. In another embodiment, it can be moved over the bottom surface of the front and back sides. The front arm and the back arm are ίί ΐ^ΐ, and the front and the f-face are connected to the brain and 110b. The system can be "closely connected to the wafer 1 〇 2 to move on the wafer table" and can be controlled, and the system can be formed into any of the exemplified embodiments, the proximal connector (10) The base portion; the end rotates about an axis defined by the second end of the arm. = , near = 11 〇 is the arc above the surface of the wafer. In yet another embodiment, the arm is moved by rotational motion and linear motion. Although the proximal joint on each side of the wafer is shown, it is single-sided on one side. The surface preparation process, such as wafer scrubbing, is performed without the use of the other side of the proximal joint (10) ===. In the embodiment, the system 2_ includes a transfer surface adjacent to the wafer where the proximal joint stops. In this implementation, the fluid meniscus ΐ5^ϋ, the transfer between the surface of the wafer, and in the controllable work can be done in the 4th station, if only need to do the crystal _, the thorn with a close joint In the embodiment of the arm ^ ': I, the proximal joint 110 moves and closely closes the upper surface chamber of the second 俾 俾 to perform a wafer processing operation. We should take care of the type of fluid in the wafer 102, which is generated by the near-junction 11 、, night = enough to perform on the wafer surface 102a - appropriate washing, rinsing, drying, _, electricity Mine and so on. We should understand: = Shantou 110 handles the lower surface lion of the wafer 1〇2. In one embodiment, the wafer 110 is moved while the wafer 44 4425209 is rotated to cause the fluid meniscus to treat the upper surface 102a. In another embodiment, the wafer 102 is held stationary while the proximal joint 11 turns a fluid meniscus 15 之上 over the wafer surface. The proximal joint then moves or sweeps across the surface of the wafer and thus moves the fluid meniscus 150 along the surface of the wafer 102. In yet another embodiment, the proximal joint 110 is sufficiently mechanical to allow the fluid meniscus 15 to cover the surface area of the wafer 102. In the present embodiment, the fluid meniscus 150 can be applied over the entire surface of the wafer 1〇2 without the need to move the proximal joint 11〇.

In one embodiment, the proximal joint 110 includes primary inlets 2156 and 2154 and a primary outlet (four). In the present embodiment, the isopropanol strip IPA/N22155 present in the nitrogen atmosphere is applied to the surface of the wafer via the main inlet 2, 21% through the main outlet, 2159 vacuum on the round surface, and via the main population. 2154 applies a treatment fluid 2153 to the surface of the wafer. In the Bega example, in addition to the application of IPA/N22155 and the treatment fluid 2153, a vacuum 2159 is also applied to remove the treatment fluid 2153 from the wafer surface i〇2a. The K2155 will generate a fluid meniscus 15〇. The fluid meniscus 15 is a fluid layer defined between the proximal joint 11〇 and the wafer surface and is movable throughout the wafer table 102a in a controlled manner. In one embodiment, the fluid meniscus 15" is defined by the fixed application and removal of the & body 2153. The fluid layer defining the fluid % level 150 may be any suitable shape and/or size depending on the size, number, shape, and/or pattern of the main inlet 2154, the main outlet 2158, and the main inlet 2156. Further, depending on the type of fluid meniscus to be produced, any suitable vacuum of '1', IPA/N2, vacuum, and treatment fluid may be employed. In still another embodiment, depending on the noise between the proximal joint 110 and the wafer table φ, πγΝ2 may be omitted when 15 产生 is generated. In the present embodiment, the proximal joint main inlet 2156' thus only applies the treatment fluid 2153 by the main inlet 2154 and the treatment fluid 2153 by the main outlet 2158 to produce the fluid meniscus 15〇. In other embodiments of the proximal joint 110, depending on the configuration of the fluid meniscus to be produced, the treatment surface of the proximal joint 11G, the region of the proximal joint where the main population and the main outlet are located, has an appropriate and appropriate surface appearance. . In the case of the embodiment towel, the proximal joint 45 1255209 The surface is _ shaped or protrudes from the surrounding surface. Full r diagram if = a portion of the proximal joint 110 in accordance with an embodiment of the present invention. It should be understood that the structure of the proximal joint 11〇 shown in Fig. 8B is: = applying a treatment fluid to the surface of the wafer and applying a stable fluid meniscus from the surface of the wafer to the Ba® surface. Eight, eucalyptus proximal joints 110 can be used to create the fluid meniscus 15G. In addition, if a fluid meniscus is created with N2/IPA, another embodiment of the T-joint 110 would not require a main inlet 2154. Viewed from the top of this embodiment, the left-to-right sub-division-group main population, a group of main exits 2158, a group main entrance 2154, a group main exit 2158, and an electric main. So 'Enter Ν2//ΙΡΑ with processing chemicals into the near connector ιι〇 ΙίΓίί ?5

The contaminants above =0 102 together remove N2/lpA. The geometry of the main inlet 2156, the main inlet 2154, and the main outlet 2, such as a circular opening, a triangular opening, a square: . In the embodiment, the main inlets 2156 and 2154 and the main outlet 2158 are in the shape of π. It should be understood by us that the fluid meniscus 15 is produced according to the requirements. & inch and shape, the proximal joint 110 can be any size, shape, and configuration. In the - embodiment towel, the proximal extension extends to less than the crystal radius. In the other two examples, the 'near joint boat stretched beyond the crystal. In another embodiment, the headgear extends to a diameter greater than the diameter of the wafer. Therefore, the size of the fluid meniscus can be any suitable size depending on the size of the wafer surface area to be processed at a particular time. In addition, it should be understood that the proximal joint is in any suitable orientation, such as horizontal, vertical, or in the proper position, depending on the wafer processing operation. The proximity joint 110 can also be incorporated into a wafer processing system while & performing one or more wafer processing operations. /, Figure 15C shows the inlet pattern of the proximal joint 11〇 in accordance with an embodiment of the present invention. In the present embodiment, the proximal joint 110 includes not only the main outlet 2158, but also the main inlets 2156 and 2154. In the embodiment, the main outlet 2158 is around the = 46 1255209 inlet 2154 and the main inlet 2156 is around the main outlet 2158. Figure 15D shows a proximal joint η in accordance with an embodiment of the present invention. Another import/export pattern. In the present embodiment, the proximal joint 11A includes not only the main outlet, but also the main inlets 2156 and 2154. In one embodiment, the main outlet 21% surrounds the main inlet 2154 and the main inlet 2156 at least partially surrounds the main outlet 2158. Figure 15E shows yet another inlet/outlet pattern of the proximal joint 11〇 in accordance with an embodiment of the present invention. In the present embodiment, the proximal joint 110 includes not only the main outlet 2158, but also the main inlets 2156 and 2154. In an embodiment, the main outlet 2158 is surrounded by

Hr iL54. In one embodiment, the head 110 does not have the main inlet 2156 because the proximal joint 110 is capable of creating a fluid meniscus without the need to apply IPA/N2. It should be understood that the above-mentioned inlet/outlet, in this case, is an example and that it is possible to produce a stable and controllable lion's meniscus, and any suitable type of inlet/outlet pattern can be used. In an exemplary embodiment, the wafer preparation apparatus (4) can be used in a cluster fabrication apparatus, and the cluster wafer preparation apparatus is controlled by control. For example, the cluster preparation device includes a transmitting station, and is rounded-to-none to the proximity wafer preparation module. In the case of a close-to-close ΐ, the dry and clean wafer is transported to the receiving station and temporarily stored in the water. It is not necessary to use the flushing JJ !!P before storing the wafer in the receiving station. It will be understood by those of ordinary skill in the art that, in an implementation (the preparation apparatus is implemented to perform a plurality of different substrate preparation operations such as beta washing, etching, buffing, etc.). Ming, Chu Yu invention 'has been described by some specific content to carry out various changes within the scope of the patent, can be different for the hair wash σ ' can (10) the embodiment of the present invention implemented into a clear substrate, # And any substrate of the shape, such as a display device, a hard disk, a flat panel display, etc., when manufacturing a semiconductor device. The present invention is intended to be illustrative and not limiting, and the scope of the present invention is not limited to the scope of the present invention, so that the invention can be applied to the present invention and equivalents thereof. Make various changes. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a simplified cross-sectional view of an exemplary scrubbing and proximity cleaning and/or dry button system in accordance with an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure is a simplified partial top view of an exemplary scrubbing and proximity cleaning and/or drying system showing the supply and delivery of chemicals in a scrubbing cleaning and/or drying system in accordance with another embodiment of the present invention. And collection. -2A is a simplified cross-sectional view of a scrubbing and proximity cleaning and/or drying system in accordance with yet another embodiment of the present invention. The graph shows the top view of the inter-surface scrubbing according to the present invention. 3A shows a simplified cross-section of a wafer surface that is cleaned and/or dried adjacent to a wafer of a scrubbed chemical according to yet another embodiment of the present invention. = cleaning of the joint and or drying of the wafer on the front side of the wafer shown in Fig. 3A. The H is a re-implementation of the invention according to the refinement of the sub-joint of the present invention. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> A simplified partial enlarged cross-sectional view of a circular front surface of a simple dried crystal line in a pillow region and/or a crystal of a plurality of metal wires having a vaporized layer. 6A is a flow chart showing the operation of the method performed in an exemplary rod washing proximity, month washing and/or drying system in accordance with still another embodiment of the present invention, and FIG. 6B shows an embodiment in accordance with the present invention. A flow chart of the method of operation performed while scrubbing the back side of the wafer. ΛΛί0/1 shows a flow chart of the method operation performed during the proximity cleaning of the front side of the wafer front side in accordance with a further embodiment of the present invention. An exemplary proximity substrate preparation system of one embodiment of the invention, 7D is a wafer front surface that has been cleaned and/or dried with a positive I joint as shown in Figure 7c in accordance with yet another embodiment of the present invention. Cross section of Guanhua. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an exemplary front side close-up of a front side of a wafer according to still another embodiment of the present invention. . Guard = 8^斗为 = A cross-sectional view of the front face of the Japanese yen being subjected to the clothing shown in Fig. 8a according to still another embodiment of the present invention. The type of implementation is similar to the implementation of the series. The simplified cross-sectional view of the proximity preparation system for parallel poles, and without success. A simplified top view of the front side of the wafer being prepared by the close-up of the cognac shown in Figure 9A in accordance with yet another embodiment of the present invention. A simplified cross-sectional view 9D of a wafer front surface as shown in FIG. 9 at the time of preparation of a wafer surface at a wafer surface in accordance with still another embodiment of the present invention is an illustration of yet another embodiment in accordance with the present invention. Simplified view of the close-knit slider of the simple 49 1255209. The re-implementation of the head-------------------------------------------------------------------------------------------------------------------------------------- BRIEF DESCRIPTION OF THE DRAWINGS A simplified cross-sectional view of a wafer front side of a further embodiment of the present invention is being prepared from the Γ 10 γ ^ joint. Example of the inclusion of the buckle (4) liquid surface in the exemplary side liquid surface (4) re-type implementation in Wei Cheng containing two bending operations (4) her difficult state of the state diagram Η shows according to the invention - The wafer processing system of an embodiment. Figure 15A shows a close up view of a wafer processing operation in accordance with one embodiment of the present invention. Figure 15A shows a top view of a portion of a proximal joint in accordance with an embodiment of the present invention. 15C shows an inlet/outlet pattern of a proximal joint according to an embodiment of the present invention. FIG. 15D shows an inlet/outlet pattern of a proximal joint according to another embodiment of the present invention. FIG. 15A shows another embodiment in accordance with the present invention. Near head inlet/outlet main component symbol 100, 101: scrubbing and proximity cleaning and/or drying system 1000: proximity substrate preparation system 50 1255209 102: wafer 102a • wafer front side 102b: wafer back side 103, 103a: oxidation Layer 104: processing chamber 104a: lower wall surface 106 · fluid handling system 106a · draining exhaust element 106b: flow steering element 108, 2102a, 2102b, 2102c: drum 109: desired layer 110, 110a, 110b, 120a, 120b, 210, 2HT, 210a, 210b, 310: near joint 111: residue 112, 112a, 112b, 2112a, 2112b: arm 113: connecting arm 114 · actuating element 116: system controller 117: valve φ 11 11 ribs, ll8c: flow controllers 1102, 1104, 1202, 1204, 1206, 1302, 1304, 1306, 602, 602a to 602f, 604, 604a to 604e, 606: operation 120 · Waste liquid processing unit 121: scrubbing chemistry Product 121, 145, 146, 146', 147: Contaminants (or droplets) 122: Brush 123: Brush Center 124: Nodules 124a, 124b, 124c, 2158: Main outlet 51 1255209 125: Manifolds 126a, 126b, 126a, 126b,: Fluid inlets 126c, 126c', 132: drain/exhaust outlet (or waste outlet) 127, 129, 13 133, 134: supply tubes 128a, 128b, 128c: drain/exhaust inlet 130: lines 137, 139 : Lines 136, 138, 140, 142, 143, 144: Directions 1316, 2154, 2156: Main inlets 150, 150a, 150b, 152 · Meniscus ❿ 154, 154, 254, 254, · · Chemicals Inlet 156: IPA inlet 158, 158': extraction outlet 160 · flush inlet 168: metal wire 250, 250': meniscus 2 (8) 0 · wafer processing system 2112: near joint stage assembly 2153 · · treatment fluid φ 2159 ··vacuum 3(8): Proximity preparation system HI, H2: height 52

Claims (1)

1255209 X. Patent application scope: ^^^ and the method for backing, including the following steps: After the surface of the board is scrubbed, the sweeping step of sweeping the back of the substrate is carried out, and the substrate is swept. positive. The surface of the substrate and the back surface of the substrate for cleaning and drying, ί==ϊ!:, applied on the back surface of the substrate - the back surface meniscus, the scrubbing fluid, the product, the washing scale, the μ surface cleaning The front and back sides of the substrate for chemicals and dryness are cleaned and the dry sweep step sweeps the back side of the substrate. The method used for the cleaning and drying of the positive* surface of the substrate of the first item of the scope of the Ill range ===: cleaning and drying with the back surface / 7. The substrate damage system, including · 53 1255209 A scrubbing chemical scrubs the back side of the substrate; the north head is 'tightly and closely adjacent to the front side of the substrate; and the upper and right sides are adjacent to the back side of the substrate, and the back head is positioned as a substantial substrate. The Ueda brush is separated from the substrate. In this case, the front head and the back head are paired in pairs on the substrate system (10) of the seventh item, wherein the front surface of the substrate and the back surface of the substrate are swept back in synchronization with each other. 1^Substrate_System', which depends on a first front tube, the second one,! : and - a third frontal catheter, wherein the first-up simultaneous action, and the formation of the domain is the essence of the time and a third of the first secret: 1 #月面导官, a second back catheter, three back catheter system In order to operate the second back conduit, and the _ 7 slave-level preparation button, further includes: the front side of the board; and the solid head on the front head for moving the front head to closely close to the base moving back = tight; The method for preparing the simultaneous shifting comprises the following steps: honing the surface of the substrate to sweep the surface of the substrate; ^ preparing the surface of the substrate with the meniscus; and preparing the sulfhydryl group 4=2::-; The soft return of the rinsing operation is carried out in a second preparation operation. 54 1255209 The fineness of the substrate (4) is green, and the prepared (four) wheel is used. The contact liquid R is as follows: the table of the substrate of the nth item of the special machine _ preparation method, the operation of the surface of the substrate includes the base table: L and go, on the surface of the substrate Λ 一 : 清 清 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Applying a step to a surface of the first surface to prepare a surface of the substrate; and/or applying a surface of the substrate to the surface of the substrate, the first 'fs mr, applying a diorole on the surface of the prepared substrate © '俾能弟's second preparation of the prepared base ===== proceeding - the flushing operation is closely followed by the essence;: as shown in the table: the table of slaves _ the method of making money, the preparation of the base layer is removed The application step of the surface of the substrate on the surface of the substrate, which is applied to the surface of the substrate, on the surface of the substrate, is applied to the surface of the substrate, and the surface of the substrate is substantially dry. In order to make the first 18 of the substrate as claimed in claim 15 Method, 55 1255209 ! The first-thick surface application step on the surface of the plate is used to form a layer of material over the surface of the prepared substrate. Containing a second chemical, and a younger sputum, and the second meniscus is formed therein, forming a second chemical liquid on the surface of the second ridge of the prepared substrate. First, the formula: μ 56