TWI251623B - Apparatus for making thin film, making method thereof and chamber for its apparatus - Google Patents

Apparatus for making thin film, making method thereof and chamber for its apparatus Download PDF

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Publication number
TWI251623B
TWI251623B TW093101117A TW93101117A TWI251623B TW I251623 B TWI251623 B TW I251623B TW 093101117 A TW093101117 A TW 093101117A TW 93101117 A TW93101117 A TW 93101117A TW I251623 B TWI251623 B TW I251623B
Authority
TW
Taiwan
Prior art keywords
chamber
high pressure
pressure gas
workpiece
film coating
Prior art date
Application number
TW093101117A
Other languages
Chinese (zh)
Other versions
TW200506092A (en
Inventor
Il-Ho Kim
Hyun-Jeong Kim
Kook-Huyng Cho
Il-Hwan Bang
Original Assignee
Charm Engineering Co Ltd
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Publication date
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Application filed by Charm Engineering Co Ltd filed Critical Charm Engineering Co Ltd
Publication of TW200506092A publication Critical patent/TW200506092A/en
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Publication of TWI251623B publication Critical patent/TWI251623B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention provides an apparatus for making a thin film, a making method thereof, and a chamber for its apparatus. The objective of the present invention is to provide an effective film coating in air without using a vacuum chamber capable of forming a vacuum environment. The film making apparatus includes: a film coating chamber installed above a to-be-coated workpiece at a distance; a metal supply part providing specific fine metal particles to the workpiece through the film coating chamber; a metal channel installed in the film coating chamber for delivering the fine metal particles supplied by the metal supply part to the workpiece; a high pressure gas supply part; a high pressure gas channel for providing the workpiece with the fine metal particles through the metal channel and isolation to the external air, and being installed in the film coating chamber for providing the high pressure gas supplied by the high pressure gas supply part to the workpiece; at least a discharge channel installed on the film coating chamber for discharging the by-products produced and the high pressure gas after use; and an exhaust part in communication with the discharge channel and capable of evacuating the residual fine metal particles and the high pressure gas discharged from the discharge channel. Thus, an effective coating of film in air can be carried out without using a vacuum chamber for producing a vacuum environment.

Description

12510^ 述第-氣體傳送區域 噴射到所述鍵件上的氣以：，體傳送區域，並 22如申这奎〜 旳虱體疋惰性氣體。 . =專#彳|請第21項所述 膜袭置專用的鍍膜室禮裝置，其鍍 是氬（Ar)。 ，、彳寸徵在於，所述惰性氣體 23膜專利範圍第17項所述之鍍膜，置，1 膜裝置專用的鍍獏室又犋衣置’其鍍 包括： ，、秘徵在於，所述排出通道 第排出通道，在所述全屬 氣體通道之間沿著_方向安裝屬通逼及所述高璧 外側/著所述高1氣體通道的徑向 24 膜:以：】，:所述之錄膜裝置’其鑛 通道及所述第二排出通道2…斤迷弟-排出 第—吸入區域，設置於所述下 r斤述錢件與所述鑛膜室之間的副產物t二 體、及产氣令的氣體； 1產物同“ 第—吸入區域，設置於所述上 與所述«至亚 所、f 吸人11域’兩端分別與所述排氣部分和 域^所^人區域連接，並將通過所述第—吸入區 體、及區域吸入的所述副產物、高壓氣 體及二乳令的氣體運送到所述排氣部分。 1251,623, 25. *如申請專利範圍第24項所述之鍍獏裝置，其鍍 膜裝置專用的鍍膜室，其特徵在於’多個吸入口^ 置於所述第一吸入區域，用於吸入所述鍍件和所述 鍍膜室之間的副產物、高壓氣體、及空氣令 體。 ’、 έ 26.如申請專利範圍第25項所述之鍍膜裝置，其鍍 膜裝置專用的鍍膜室，其特徵在於，所述吸入口的 直徑比所述氣體噴射口的直徑大。 27.如申請專利範圍第17項所述之鍍膜裝置，其鍍 膜裝置專用的鍍膜室，其特徵在於，在所述上部鍍 膜室及所述下部鍍膜室相互連接的接觸部分設置 有密封材料。 m12510^ The gas-transporting region is ejected to the gas on the key member to: the body transfer region, and 22 such as the inert gas. . = 专#彳|Please refer to the coating device for membrane attack, which is described in item 21. The plating is argon (Ar). The coating of the inert gas 23 film patent range 17th, the plating chamber dedicated to the 1 membrane device is further provided, and the plating includes: a discharge passage venting passage, between the entire gas passages, a radial 24 membrane that is attached to the sorghum outer side/the high 1 gas passage along the _ direction: to: The film recording device 'the mine channel and the second discharge channel 2...the singer-discharge-inhalation region, is disposed as a by-product t between the lower gram of money and the film chamber a gas of gas and gas production; 1 product with the "first-inhalation zone, disposed on the upper and the ends of the «to the sub-portal, f-inhalation 11 domain" and the exhaust portion and domain respectively The human area is connected, and the by-products, high-pressure gas, and di-milk gas inhaled through the first-inhalation zone and the zone are transported to the exhaust portion. 1251, 623, 25. * If applied The rhodium plating apparatus according to Item 24 of the patent scope, the coating chamber dedicated to the coating apparatus, characterized in that 'multiple suction ports ^ In the first suction region, for inhaling a by-product, a high-pressure gas, and an air body between the plating member and the coating chamber. ', έ 26. Coating as described in claim 25 The coating chamber dedicated to the coating device is characterized in that the diameter of the suction port is larger than the diameter of the gas injection port. 27. The coating device according to claim 17 of the patent application, which is dedicated to the coating device A coating chamber characterized in that a sealing material is provided at a contact portion where the upper plating chamber and the lower coating chamber are connected to each other.

TW093101117A 2003-08-08 2004-01-16 Apparatus for making thin film, making method thereof and chamber for its apparatus TWI251623B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0055114A KR100526009B1 (en) 2003-08-08 2003-08-08 Apparatus for making thin film, making method thereof and chamber for its apparatus

Publications (2)

Publication Number Publication Date
TW200506092A TW200506092A (en) 2005-02-16
TWI251623B true TWI251623B (en) 2006-03-21

Family

ID=34587841

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101117A TWI251623B (en) 2003-08-08 2004-01-16 Apparatus for making thin film, making method thereof and chamber for its apparatus

Country Status (3)

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KR (1) KR100526009B1 (en)
CN (1) CN100366787C (en)
TW (1) TWI251623B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8663441B2 (en) 2009-02-24 2014-03-04 Industrial Technology Research Institute Vacuum coating apparatus with mutiple anodes and film coating method using the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101682523B1 (en) 2015-03-26 2016-12-07 참엔지니어링(주) Substrate supporting apparatus
KR102100801B1 (en) 2018-04-12 2020-04-14 참엔지니어링(주) Deposition apparatus and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2639544B2 (en) * 1988-01-08 1997-08-13 財団法人生産開発科学研究所 Single crystal thin film of LaA Lower 2 Cu 3 Lower O 7 Lower 3 x with three-layer perovskite structure and LaA Lower 2 Cu Lower 3 O Lower 7 Lower 7 x thin film manufacturing method
JPH06170218A (en) * 1992-12-09 1994-06-21 Hitachi Ltd Method and device for forming surface superstructure
KR950007670B1 (en) * 1993-03-31 1995-07-14 동부제강주식회사 Apparatus of a deposition by an evaporating sprayer in a normal pressure
KR100389680B1 (en) * 2001-08-11 2003-06-27 재단법인 포항산업과학연구원 Coating layer remove system on welding area using the shot blast

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8663441B2 (en) 2009-02-24 2014-03-04 Industrial Technology Research Institute Vacuum coating apparatus with mutiple anodes and film coating method using the same

Also Published As

Publication number Publication date
KR100526009B1 (en) 2005-11-08
TW200506092A (en) 2005-02-16
KR20050017164A (en) 2005-02-22
CN1580318A (en) 2005-02-16
CN100366787C (en) 2008-02-06

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