TWI249651B - EUV lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there - Google Patents
EUV lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there Download PDFInfo
- Publication number
- TWI249651B TWI249651B TW092115987A TW92115987A TWI249651B TW I249651 B TWI249651 B TW I249651B TW 092115987 A TW092115987 A TW 092115987A TW 92115987 A TW92115987 A TW 92115987A TW I249651 B TWI249651 B TW I249651B
- Authority
- TW
- Taiwan
- Prior art keywords
- self
- assembled monolayer
- optical element
- radiation
- projection
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 239000013545 self-assembled monolayer Substances 0.000 title claims abstract description 34
- 239000002094 self assembled monolayer Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 34
- 230000005855 radiation Effects 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 23
- -1 alkyl decane Chemical compound 0.000 claims description 18
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- 150000004772 tellurides Chemical group 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 238000011109 contamination Methods 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000003607 modifier Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- IQFYYKKMVGJFEH-XLPZGREQSA-N Thymidine Chemical compound O=C1NC(=O)C(C)=CN1[C@@H]1O[C@H](CO)[C@@H](O)C1 IQFYYKKMVGJFEH-XLPZGREQSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- SYVNSELUWFDWOQ-UHFFFAOYSA-N 1,2,3,4,5,6,7,8,9,10-decafluoroanthracene Chemical compound FC1=C(F)C(F)=C(F)C2=C(F)C3=C(F)C(F)=C(F)C(F)=C3C(F)=C21 SYVNSELUWFDWOQ-UHFFFAOYSA-N 0.000 description 1
- LOLANUHFGPZTLQ-UHFFFAOYSA-N 1-ethoxydecane Chemical compound CCCCCCCCCCOCC LOLANUHFGPZTLQ-UHFFFAOYSA-N 0.000 description 1
- DWRXFEITVBNRMK-UHFFFAOYSA-N Beta-D-1-Arabinofuranosylthymine Natural products O=C1NC(=O)C(C)=CN1C1C(O)C(O)C(CO)O1 DWRXFEITVBNRMK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- IQFYYKKMVGJFEH-UHFFFAOYSA-N beta-L-thymidine Natural products O=C1NC(=O)C(C)=CN1C1OC(CO)C(O)C1 IQFYYKKMVGJFEH-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229940104230 thymidine Drugs 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02254176 | 2002-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200410050A TW200410050A (en) | 2004-06-16 |
| TWI249651B true TWI249651B (en) | 2006-02-21 |
Family
ID=31197952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092115987A TWI249651B (en) | 2002-06-14 | 2003-06-12 | EUV lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6882406B2 (ja) |
| JP (1) | JP4099116B2 (ja) |
| KR (1) | KR100526717B1 (ja) |
| CN (1) | CN1492284A (ja) |
| SG (1) | SG108316A1 (ja) |
| TW (1) | TWI249651B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101940892B1 (ko) * | 2003-06-13 | 2019-01-21 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| KR101682884B1 (ko) | 2003-12-03 | 2016-12-06 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
| US8133554B2 (en) * | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
| US7274432B2 (en) * | 2004-10-29 | 2007-09-25 | Asml Netherlands B.V. | Radiation system, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7450217B2 (en) * | 2005-01-12 | 2008-11-11 | Asml Netherlands B.V. | Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| EP1720163A1 (en) * | 2005-05-05 | 2006-11-08 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Film forming photosensitive materials for the light induced generation of optical anisotropy |
| CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
| DE102006049432A1 (de) * | 2006-10-16 | 2008-04-17 | Philipps-Universität Marburg | Verfahren zur Herstellung von selbst aggregierenden Monolagen auf Festkörperoberflächen |
| US8017183B2 (en) * | 2007-09-26 | 2011-09-13 | Eastman Kodak Company | Organosiloxane materials for selective area deposition of inorganic materials |
| NL1036469A1 (nl) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby. |
| NL2003363A (en) * | 2008-09-10 | 2010-03-15 | Asml Netherlands Bv | Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method. |
| TWI395775B (zh) * | 2009-04-07 | 2013-05-11 | Univ Nat Cheng Kung | 製造微奈米結構之自組裝方法 |
| KR20110077950A (ko) * | 2009-12-30 | 2011-07-07 | 주식회사 하이닉스반도체 | 극자외선 블랭크 마스크 및 이를 이용한 극자외선 마스크 제조방법 |
| US9073098B2 (en) * | 2012-05-16 | 2015-07-07 | Asml Netherlands B.V. | Light collector mirror cleaning |
| US20140158914A1 (en) * | 2012-12-11 | 2014-06-12 | Sandia Corporation | Optical component with blocking surface and method thereof |
| US10060934B2 (en) | 2013-11-18 | 2018-08-28 | Nanopharmaceuticals Llc | Methods for screening patients for resistance to angioinhibition, treatment and prophylaxis thereof |
| WO2021122065A1 (en) * | 2019-12-19 | 2021-06-24 | Asml Netherlands B.V. | Improved lithography methods |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| EP0527166B1 (de) * | 1990-05-02 | 1995-06-14 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Belichtungsvorrichtung |
| EP0492545B1 (en) | 1990-12-25 | 1998-03-25 | Matsushita Electric Industrial Co., Ltd. | Transparent substrate with monomolecular film thereon and method of manufacturing the same |
| US5229872A (en) * | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| US5677939A (en) * | 1994-02-23 | 1997-10-14 | Nikon Corporation | Illuminating apparatus |
| US5885753A (en) * | 1996-04-12 | 1999-03-23 | The Texas A&M University System | Polymeric self-assembled mono- and multilayers and their use in photolithography |
| FR2752834B1 (fr) | 1996-08-30 | 1998-11-27 | Corning Inc | Procede perfectionne pour conferer des proprietes hydrophobes aux surfaces d'articles siliceux |
| JPH1120034A (ja) | 1997-06-30 | 1999-01-26 | Nikon Corp | 光学部材の製造方法、光学部材及びその光学部材を用いた投影露光装置 |
| JPH1152102A (ja) | 1997-08-05 | 1999-02-26 | Nikon Corp | エキシマレーザー用光学部材、その仮保護方法及び投影露光装置 |
| US5958605A (en) * | 1997-11-10 | 1999-09-28 | Regents Of The University Of California | Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography |
| US6200882B1 (en) * | 1998-06-10 | 2001-03-13 | Seagate Technology, Inc. | Method for processing a plurality of micro-machined mirror assemblies |
| US6297169B1 (en) | 1998-07-27 | 2001-10-02 | Motorola, Inc. | Method for forming a semiconductor device using a mask having a self-assembled monolayer |
| US6143358A (en) | 1998-10-01 | 2000-11-07 | Nanofilm, Ltd. | Hydrophobic thin films on magnesium fluoride surfaces |
| TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
| JP2001033941A (ja) * | 1999-07-16 | 2001-02-09 | Toshiba Corp | パターン形成方法及び露光装置 |
| KR100877708B1 (ko) * | 2001-03-29 | 2009-01-07 | 다이니폰 인사츠 가부시키가이샤 | 패턴 형성체의 제조 방법 및 그것에 사용하는 포토마스크 |
| US6586158B2 (en) * | 2001-05-25 | 2003-07-01 | The United States Of America As Represented By The Secretary Of The Navy | Anti-charging layer for beam lithography and mask fabrication |
| US20060024589A1 (en) * | 2004-07-28 | 2006-02-02 | Siegfried Schwarzl | Passivation of multi-layer mirror for extreme ultraviolet lithography |
-
2003
- 2003-06-12 CN CNA031330231A patent/CN1492284A/zh active Pending
- 2003-06-12 SG SG200303384A patent/SG108316A1/en unknown
- 2003-06-12 JP JP2003198091A patent/JP4099116B2/ja not_active Expired - Fee Related
- 2003-06-12 US US10/459,706 patent/US6882406B2/en not_active Expired - Fee Related
- 2003-06-12 TW TW092115987A patent/TWI249651B/zh not_active IP Right Cessation
- 2003-06-12 KR KR10-2003-0037872A patent/KR100526717B1/ko not_active IP Right Cessation
-
2005
- 2005-02-08 US US11/052,115 patent/US20050157283A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040026101A (ko) | 2004-03-27 |
| SG108316A1 (en) | 2005-01-28 |
| US20040025733A1 (en) | 2004-02-12 |
| JP2004040107A (ja) | 2004-02-05 |
| TW200410050A (en) | 2004-06-16 |
| US20050157283A1 (en) | 2005-07-21 |
| US6882406B2 (en) | 2005-04-19 |
| CN1492284A (zh) | 2004-04-28 |
| KR100526717B1 (ko) | 2005-11-08 |
| JP4099116B2 (ja) | 2008-06-11 |
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