TWI246754B - Semiconductor package having stacked chip and a method for fabricating - Google Patents

Semiconductor package having stacked chip and a method for fabricating Download PDF

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Publication number
TWI246754B
TWI246754B TW092135913A TW92135913A TWI246754B TW I246754 B TWI246754 B TW I246754B TW 092135913 A TW092135913 A TW 092135913A TW 92135913 A TW92135913 A TW 92135913A TW I246754 B TWI246754 B TW I246754B
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Taiwan
Prior art keywords
wafer
spacer
carrier
semiconductor package
stacked
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TW092135913A
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Chinese (zh)
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TW200522294A (en
Inventor
Chung-Lun Liu
Chin-Huang Chang
Jung-Pin Huang
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Siliconware Precision Industries Co Ltd
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Priority to TW092135913A priority Critical patent/TWI246754B/en
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Publication of TWI246754B publication Critical patent/TWI246754B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Wire Bonding (AREA)

Abstract

A semiconductor package having stacked chip and a method for fabricating the same are proposed. A semiconductor package includes a chip carrier having a carrier surface. At least one first chip is mounted on the carrier surface of the chip carrier. A spacer formed with a recess is used receive a second chip. Wires are bonded to be electrically connected the chip carrier, spacer, first chip and second chip. A resin body is formed to encapsulate the chip carrier, spacer, first chip, second chip and wires. By means of the recess of the spacer, the semiconductor package can be reduced in thickness and volume, and delaminate of the chips and uneven speed of the resin flow can be prevented.

Description

1246754 五、發明說明(1) 【發明所屬之技術領域】 一種堆疊式晶片之半導體封裝件及其製法,尤指一種 可降低半導體封裝件之整體高度的堆疊式晶片之半導體封 裝件及其製法。 【先前技術】 隨著電子產業的蓬勃發展,電子產品亦逐漸邁入多功 施、南性能的研發方向,以滿足半導體封裝件高積集度 (Integration )及微型化(μ i n i a t u r i z a t i ο η )的封裝需求, 且為求提昇單一半導體封裝件之性能與容量,以符電子產 品小型化、大容量與高速化之趨勢,習知上多半係將半導 體封裝件以多晶片模組化(Multi Chip Module ; MCM)的 形式呈現’此種封裝件亦可縮減整體封裝件體積並提昇電 性功能,遂而成為一種封裝的主流,其係在單一封裝件之 曰曰片承載件上接置至少兩半導體晶片(semiconduct〇r c h i p ) ’且母一晶片與晶片承載件(c乜i p c a r r i e r )間均係 以垂直堆疊(stack)方式接置,此種堆疊式晶片封裝結構 已見於美國專利第5,7 7 7,3 4 5號及第5,7 9 3,1 0 8號、第 5,5 0 2,2 8 9號、第6,0 0 5,7 7 8號等習知技術中。 第6 A圖所示即係美國專利第5,7 7 7,3 4 5號所揭示之封 裝件剖視圖,其係在一導線架(1 e a d f r a m e ) 2 0之晶片座 2 〇 1下方裝設第一晶片2 1,再於第一晶片2 1的下方黏置第 一晶片22,且該第一晶片2 1及第二晶片2 2下方係分別佈設 有複數個長銲墊(bonding pad) 21 1及銲墊221,藉由銲線 (b ο n d i n g w i r e ) 2 3連接第一晶片2 1之長銲墊2 1 1與導線架1246754 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Field of the Invention A semiconductor package of a stacked wafer and a method of fabricating the same, and more particularly to a semiconductor package of a stacked wafer which can reduce the overall height of a semiconductor package and a method of fabricating the same. [Prior Art] With the booming development of the electronics industry, electronic products are gradually entering the direction of multi-functional and south-performance research to meet the high integration and miniaturization of semiconductor packages (μ iniaturizati ο η). In order to improve the performance and capacity of a single semiconductor package, and to reduce the miniaturization, large capacity, and high speed of electronic products, it is customary to multi-chip semiconductor packages into multiple chips (Multi Chip Module). MCM) in the form of 'this package can also reduce the size of the overall package and enhance the electrical function, and become the mainstream of a package, which is connected to at least two semiconductors on the die carrier of a single package. The wafer (semiconduct〇rchip) 'and the mother wafer and the chip carrier (c乜ipcarrier) are connected in a vertical stack. The stacked chip package structure has been found in U.S. Patent No. 5,7 7 7 , 3 4 5 and 5, 7 9 3, 1 0 8 , 5, 5 0 2, 2 8 9 , 6, 0 0 5, 7 7 8 and other conventional techniques. Figure 6A is a cross-sectional view of the package disclosed in U.S. Patent No. 5,7,7,3, 4,5, which is incorporated below the wafer holder 2 〇1 of a lead frame (1 eadframe) 20 A first chip 22 is adhered to the lower surface of the first wafer 2 1 , and a plurality of bonding pads 21 1 are respectively disposed under the first wafer 2 1 and the second wafer 2 2 . And the pad 221, the long pad 2 1 1 of the first wafer 2 1 is connected to the lead frame by a bonding wire ( 2 )

17567石夕品.ptd 第7頁 1246754 五、發明說明(2) 2 0之導腳2 0 2,且該第一晶片2 1之長銲墊2 1 1與第二晶片2 2 之銲墊2 2 1係同樣以銲線2 3連接,俾使導線架2 0、第一晶 片2 1及第二晶片2 2得以電性連接,且藉由導線架2 0之導腳 2 0 2而與外部裝置電性連接,最後再以封裝膠體2 4將整體 包覆,以完成封裝製程。 然而,對於此類封裝件而言,為使堆疊於較上層之第 二晶片2 2能夠電性連接至導線架2 0的導腳2 0 2,該第一晶 片2 1上必須設置用以提供跳線的長銲墊2 1 1,以令該第二 晶片2 2可藉由第一晶片2 1上的長銲墊2 1 1而以銲線2 3跳接 至導線架2 0上,如第6 B圖所示,惟在第一晶片2 1上增設用 以跳接的長銲墊2 1 1將增大其面積,導致整體尺寸難以縮 小,且長銲墊2 1 1之特殊設計非一般傳統晶片的設計方 式,並將增加晶片之製程成本,而成為多晶片封裝件發展 上的嚴重瓶頸。 因此,另外一種多晶片模組,如第7圖所示之美國專 利第6,0 0 5,7 7 8號專利,其係在一晶片承載件5 0上接置一 弟*一晶片5 1 ’於該弟一晶片5 1相對於该晶片承載件5 0之表 面5 1 1上接置一體積小於該第一晶片5 1之間隔物 (s p a c e r ) 5 2,又該間隔物5 2相對於第一晶片5 1之表面5 1 1 上接置一體積等同於該第一晶片5 1的第二晶片5 3,又該間 隔物5 2之面積尺寸小於第一晶片5 1及第二晶片5 3,使該第 一晶片5 1與第二晶片5 3可透過複數條銲線5 4而與晶片承載 件5 0電性連接;惟此一結構中由於兩晶片間係夾置有一間 隔物5 2,而該間隔物5 2之熱膨脹係數若與矽晶片差異極17567石夕品.ptd Page 7 12467754 V. Invention Description (2) 20 0 lead pin 2 0 2, and the first wafer 2 1 long pad 2 1 1 and the second wafer 2 2 pad 2 The 2 1 series is also connected by a bonding wire 23, so that the lead frame 20, the first wafer 2 1 and the second wafer 2 2 are electrically connected, and externally by the lead pin 20 of the lead frame 20 The device is electrically connected, and finally the entire package is coated with the encapsulant 24 to complete the encapsulation process. However, for such a package, in order to enable the second wafer 2 2 stacked on the upper layer to be electrically connected to the lead 2 0 2 of the lead frame 20, the first wafer 21 must be disposed to provide The long pad 2 1 1 of the jumper is such that the second wafer 2 2 can be jumped to the lead frame 20 by the bonding wire 2 3 by the long pad 2 1 1 on the first wafer 2 1 , such as As shown in FIG. 6B, the addition of a long pad 2 1 1 for jumpering on the first wafer 2 1 will increase the area thereof, resulting in difficulty in reducing the overall size, and the special design of the long pad 2 1 1 is not The design of conventional wafers will increase the cost of wafer processing and become a serious bottleneck in the development of multi-chip packages. Therefore, another multi-chip module, such as the U.S. Patent No. 6,0 0,7,78, which is shown in Fig. 7, is attached to a wafer carrier 50. a spacer 5 2 having a volume smaller than the first wafer 5 1 is attached to the surface 51 of the wafer carrier 50, and the spacer 5 2 is opposite to the spacer 5 2 A surface of the first wafer 51 is connected to a second wafer 53 having a volume equal to that of the first wafer 51. The area of the spacer 52 is smaller than that of the first wafer 51 and the second wafer 5. 3, the first wafer 51 and the second wafer 53 are electrically connected to the wafer carrier 50 through a plurality of bonding wires 54; however, in this structure, a spacer 5 is interposed between the two wafers. 2, and the thermal expansion coefficient of the spacer 52 is different from that of the germanium wafer

17567石夕品.ptd 第8頁 1246754 五、發明說明(3) ' ^一~~-~ -一 η 數不匹配所致的脫層現象而造成晶片 連:外t ΐ π:=的堆疊,除增加銲線長度不利於電性 =接外’更化加封衣件高度,而不利於封裝件薄化的發 因此,對於前述堆疊式晶片半導體封裝件而古, $上雖可充分解決電性佈局上之限制,卻也增加了晶 豐的層數與厚度,而與封裝件之薄型化趨勢相左,= 再如前述美國專利第5, 5 0 2, 28 9號所揭露在各晶I片間 基板之設計以便於跳線,亦可能因為該基板與晶曰。埶 膨脹係數(CTE)差異過大’而令該基板與晶片間之接觸介”、 面發生脫層現象,進而對該晶片造成破壞;再者,對此類 堆疊式晶片半導體封裝件而言,於各晶片間增設基板,均 將因其厚度增大’而於封膠製程以藉封裝膠體包覆其晶片 與晶片承載件時’將因該複數個相互堆疊之晶片的數量過 多,而導致該封裝膠體所形成之模流於模穴(Cavity)中遭 遇太大的模流阻力,進而有產生分佈不均,導致氣洞 (void)之發生,而使封裝品質下降。 口此 此二^知堆疊式晶片封裝件即便可解決跳線電 性問題,惟對於整體高度過高、銲線線弧過長、熱膨脹係 數不匹配、乃至模流阻力增大等結構或製程問題顯然均難 以改善,而形成多晶片封裴技術上的一大阻礙;再者,此 些問題雖可藉由改變多晶片配置方式而獲得改善,例如第 8圖所示之美國專利第5,7 15, 147號專利,係為一以並排方 式配置多個晶片的多晶片模組,係於一承載件(i s丨and ) 6 〇17567石夕品.ptd Page 8 12467754 V. Description of invention (3) ' ^ a~~-~ - η number mismatch caused by delamination caused by wafer connection: external t ΐ π:= stack, In addition to increasing the length of the wire, it is not conducive to the electrical = externally, and the height of the sealing member is increased, which is not conducive to the thinning of the package. Therefore, for the above-mentioned stacked wafer semiconductor package, the electrical capacity can be fully solved. The limitation of the layout, but also increases the number and thickness of the crystal, and the tendency to be thinner than the package, = as disclosed in the aforementioned U.S. Patent No. 5,502,28, The substrate is designed to facilitate jumpers, and may also be due to the substrate and the wafer. The difference in the coefficient of expansion (CTE) is too large to cause the contact between the substrate and the wafer, and the surface is delaminated, thereby causing damage to the wafer. Further, for such a stacked wafer semiconductor package, Adding a substrate between the wafers, both of which will increase in thickness, and when the encapsulation process covers the wafer and the wafer carrier by the encapsulant, the package will be excessive due to the excessive number of wafers stacked on each other. The mold flow formed by the colloid encounters too much mold flow resistance in the cavity, which causes uneven distribution, which leads to the occurrence of voids, and the package quality is degraded. Even if the chip package can solve the jumper electrical problem, it is obviously difficult to improve the structure or process problems such as the overall height is too high, the wire arc is too long, the thermal expansion coefficient is not matched, and the mold flow resistance is increased. A major impediment to multi-chip packaging technology; furthermore, these problems can be improved by changing the multi-wafer configuration, such as U.S. Patent No. 5,7 15,147, which is incorporated herein by reference. In a parallel manner to a plurality of multi-chip module of a wafer, based on a carrier (i s Shu and) 6 billion

17567石夕品.ptd17567石夕品.ptd

第9頁 1246754 五、發明說明(4) 外環設有複數個内部接腳(i η n e r 1 e a d ) 6 0 1,而在該承載 件6 0上l置有一第一晶片61、弟二晶片6 2及電路板6 3,且 在内部接腳601上裝設有電路板64,又於第一 Q y •。。 曰曰n b 1及第 二晶片6 2上方裝置電路板6 5,得以複數個電連接事置 (electrically connecting means)連接第〜s 、 二晶片6 2及電路板63、64、65,而該電連接努片弟 66 ;該型結構設計雖可解決整體高度過高=置係為銲線 平並排第一晶片61與第二晶片62之設計卻反报題,然其水 裝面積,同樣無法達到小體積封裝之目的。W加了整體封 綜上所述,即知在現有封裝件設計 何變化,只要多晶片之設計不變,則難 不論其結構如 題’故*,如何開發出一種堆疊式 顧所有習知問 降低其整#古_、诘,丨、# 片牛導體封裝件,以 一 i骽回度、減少封裝面積,同時附可, 決熱膨脹係數不匹配與模流不均勻等 棱升笔性並解 領域所需迫切解決之課題。1寺問喊’確為此-研發 【發明内容】 本發明之目的即在提供一種可降彳氏主道 體高度的±4田:曰y — *、曾蛐 +導體封裝件之整 X的堆®式晶片之半導體封裝件及其製 本發明之又一目的即在提供一種 需使用且w ?」徒供跳線功能而不 法。 I千¥體封裝件及其製 本發明之再一目的即在提供一種不會拇4 # J可缩短銲線長度及線弧高度的…于”南度 件及其製法。 择且八日日片之半導體封裝Page 9 12467754 V. Description of the Invention (4) The outer ring is provided with a plurality of internal pins (i η ner 1 ead ) 610, and a first wafer 61 and a second chip are disposed on the carrier 60. 6 2 and the circuit board 6 3, and the circuit board 64 is mounted on the internal pin 601, and is also in the first Q y •. .曰曰nb 1 and the second chip 6 2 above the device circuit board 65, a plurality of electrical connecting means are connected to the first s, the second chip 612 and the circuit boards 63, 64, 65, and the electric The connection structure is 66; this type of structural design can solve the problem that the overall height is too high = the system is laid flat and the first wafer 61 and the second wafer 62 are arranged side by side, but the water-filled area cannot be reached. The purpose of small volume packaging. W adds the overall seal, which means that the design of the existing package changes, as long as the design of the multi-chip is unchanged, it is difficult to develop a kind of stacked-type method. The whole #古_,诘,丨,# piece of cattle conductor package, with a degree of return, reduce the package area, and at the same time, the thermal expansion coefficient does not match and the mold flow is uneven and so on. The urgent need to solve the problem. 1 Temple asks 'I do it - R & D 【Inventive content】 The purpose of the present invention is to provide a height of ±4 fields that can reduce the height of the main track body: 曰y — *, Zeng Yi + conductor package X Semiconductor Package of Stacked Wafer and Its Manufacture It is yet another object of the present invention to provide a jumper function that is required to be used. A further object of the invention is to provide a kind of "Southern part" which can shorten the length of the welding line and the height of the line arc without the thumb 4 #J. Semiconductor package

1246754 五、發明說明(5) 本發明之復一目的即在提供一種可避免熱膨脹係數不 匹配導致脫層的堆疊式晶片之半導體封裝件及其製法。 本發明之且又一目的即在提供一種可減低封裝膠體模 流阻力降低氣洞發生的堆疊式晶片之半導體封裝件及其製 法。 為達成上述及其他目的,本發明係提供一種堆疊式晶 片半導體封裝件之結構’係包括·具有一承載表面的晶片 承載件;至少一第一晶片,係接置於該晶片承載件之承載 表面上;至少一間隔板,係接置於該第一晶片未與該晶片 承載件接置之相對表面上,且該間隔板上係開設有一開 槽;至少一第二晶片,係容設於該間隔板之開槽内,且接 置於該第一晶片未與該晶片承載件接置之相對表面上;複 數個銲線,係用以電性連接該晶片承載件、第一晶片、間 隔板及第二晶片;以及一封裝膠體,係成形在該晶片承載 件上以包覆第一晶片、間隔板、第二晶片及銲線。 本發明之堆疊式晶片半導體封裝件之製法則係包含以 下步驟:製備一晶片承載件,其係具有一接置表面;將至 少一第一晶片接置於該晶片承載件之接置表面上;製備至 少一間隔板,該間隔板上係設有一開槽,且將該間隔板接 置於該第一晶片未與該晶片承載件接置之相對表面上;製 備至少一第二晶片,且將該第二晶片接置於該第一晶片未 與該晶片承載件接置之相對表面上,而使該第二晶片容設 於該間隔板之開槽内;以銲線電性連接該晶片承載件、第 一晶片、間隔板及第二晶片;以及於該晶片承載件上形成1246754 V. SUMMARY OF THE INVENTION (5) A further object of the present invention is to provide a semiconductor package of a stacked wafer which avoids delamination due to mismatch in thermal expansion coefficients and a method of fabricating the same. It is still another object of the present invention to provide a semiconductor package of a stacked wafer which reduces the mold cavity flow resistance and reduces the occurrence of voids and a method of fabricating the same. To achieve the above and other objects, the present invention provides a stacked wafer semiconductor package structure comprising: a wafer carrier having a carrier surface; at least a first wafer attached to a carrier surface of the wafer carrier At least one spacer is attached to an opposite surface of the first wafer that is not connected to the wafer carrier, and the spacer has a slot; at least one second chip is received in the spacer a slot in the spacer, and is disposed on an opposite surface of the first wafer that is not connected to the wafer carrier; a plurality of bonding wires are electrically connected to the wafer carrier, the first wafer, and the spacer And a second wafer; and an encapsulant formed on the wafer carrier to cover the first wafer, the spacer, the second wafer, and the bonding wire. The method for manufacturing a stacked wafer semiconductor package of the present invention comprises the steps of: preparing a wafer carrier having an attachment surface; and attaching at least one first wafer to an attachment surface of the wafer carrier; Preparing at least one spacer, the spacer is provided with a slot, and the spacer is disposed on an opposite surface of the first wafer not connected to the wafer carrier; at least one second wafer is prepared, and The second wafer is placed on the opposite surface of the first wafer that is not connected to the wafer carrier, and the second wafer is received in the slot of the spacer; the wafer is electrically connected by a bonding wire. Piece, first wafer, spacer and second wafer; and formed on the wafer carrier

17567石夕品.ptd 第11頁 1246754 五、發明說明(6) 一封裝膠體以包覆該第一晶片、間隔板、第二晶片及銲 線。 前述之第二晶片係容裝在間隔板之開槽内,使該第二 晶片與間隔板為同層結構,使該第二晶片與間隔板一同疊 設在弟一晶片的上方’而成為^一兩層式的結構’俾付減少 層數以降低整體的封裝高度,進而可降低模流阻力、減少 氣洞的產生。 再者,該第二晶片係容置在間隔板的開槽内,使該第 二晶片與間隔板位在同一水平面上,俾使第二晶片與間隔 板之間的電性連接得在一平面上進行連接,以免除上下段 差連接的方式造成銲線過長及線弧高度過高的情況,俾以 縮短銲線長度及線弧高度,進而得以降低整體的封裝高 片片面 晶晶介 二二觸 第第接 該與免 使片避 , 晶以 内一, 槽第同 開該相 的而數 板,係 隔上脹 間面膨 在頂熱 置的之 容片者 片晶兩 晶一其 二第, 第在質 該裝材 又貼同 。 接相 度 直為 或之之 質者片 同兩晶 非得壞 知使破 習同而 除不, 免質留 可材殘 俾的力 , 設應 況疊熱 情下成 的上造 片成大 晶造過 壞而異 破,差 而設數 象疊係 現料脹 層材膨 脫似熱。 生近的況 產非間情 地同 方易不 施輕他 實容其 之内由 明之藉 發示可 本揭亦 明所明 說書發 例明本 施說。 實本效 體由功 具可與 的士點 定人優 特之他 由藝其 1藉技之 式係此明 方下習發 施以熟本 實 ,解 [ 式瞭17567 石夕品.ptd Page 11 1246754 V. INSTRUCTION DESCRIPTION (6) A package of colloid to cover the first wafer, the spacer, the second wafer, and the bonding wire. The second chip is accommodated in the slot of the spacer, so that the second chip and the spacer are in the same layer structure, so that the second chip and the spacer are stacked on the top of the chip. A two-layer structure 'pays down the number of layers to reduce the overall package height, which in turn reduces mold flow resistance and reduces the generation of air holes. Furthermore, the second wafer is received in the groove of the spacer, so that the second wafer and the spacer are on the same horizontal plane, so that the electrical connection between the second wafer and the spacer is electrically connected to a plane. The connection is made to avoid the situation that the welding line is too long and the line arc height is too high, so that the length of the welding line and the height of the line arc are shortened, thereby reducing the overall package height and the surface of the crystal. The first and the eliminator are removed, the crystal is inside, the groove is the same as the plate of the phase, and the slab is expanded by the bulging surface. The quality is the same as the material. The quality of the film is the same as that of the two crystals. If the two crystals are the same as the two crystals, the shards of the shards of the shards can be removed. It is too bad and broken, and the number is like a stack of materials. The situation of being close to the living is not the same as that of the other party, and it is not easy to apply it to him. The fact that it is borrowed from the Ming Dynasty can be revealed by the Ming Dynasty. The real effect is made up of the skill and the taxi point. The person who uses it is the skill of the art.

]7567石夕品.ptd 第12頁 1246754 五、發明說明(7) 的具體實施例加以施行或應用,本說明書中的各項細節亦 可基於不同觀點與應用,在不悖離本發明之精神下進行各 種修飾與變更。 以下之實施例係進一步詳細說明本發明之觀點,但並 非以任何觀點限制本發明之範疇。 本發明係在一晶片承載件(c h i p c a r r i e r )上疊設一第 一晶片、第二晶片及間隔板,於該間隔板上開設開槽,以 將該第二晶片容置在開槽内,俾使該第二晶片與該間隔板 位於堆疊式結構中的同一層,並一同疊設在第一晶片上, 而成為一兩層式結構,茲藉由下述實施例分別予以詳細說 明。 請參閱第1 A圖及第1 B圖,本發明堆疊式晶片半導體封 裝件1係包括一用以與外部装置電性連接的晶片承載件 1 0 ;至少一黏置在晶片承載件1 0上方的第一晶片1 1 ;至少 一黏置在第一晶片1 1上方的間隔板1 2,該間隔板1 2上係設 有一開槽1 2 a ;至少一黏置在第一晶片1 1上方的第二晶片 1 3,且該第二晶片1 3係容置在間隔板1 2的開槽1 2 a内;複 數個用以電性連接的銲線1 4,該銲線1 4係電性連接上述之 晶片承載件1 0、第一晶片1 1、間隔板1 2及第二晶片1 3 ;以 及一用以封裝的封裝膠體1 5,該封裝膠體1 5係成形於該晶 片承載件1 0上並包覆第一晶片1 1、間隔板1 2、第二晶片1 3 及銲線1 4。 而上述之堆疊式晶片半導體封裝件1之製法係進一步 包括:製備一晶片承載件1 0,於該晶片承載件1 0上方之作] 7567石夕品.ptd Page 12 12467754 V. The specific embodiments of the invention (7) are implemented or applied, and the details in this specification can also be based on different viewpoints and applications without departing from the spirit of the invention. Various modifications and changes are made below. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention in any way. In the present invention, a first wafer, a second wafer, and a spacer are stacked on a chip carrier, and a groove is formed in the spacer to accommodate the second wafer in the slot. The second wafer and the spacer are located on the same layer in the stacked structure, and are stacked on the first wafer to form a two-layer structure, which will be respectively described in detail by the following embodiments. Referring to FIGS. 1A and 1B, the stacked wafer semiconductor package 1 of the present invention includes a wafer carrier 10 for electrically connecting to an external device; at least one is pasted on the wafer carrier 10; a first wafer 11; at least one spacer 1 2 adhered to the first wafer 1 1 , the spacer 1 2 is provided with a slot 1 2 a; at least one is pasted on the first wafer 1 1 The second wafer 13 is received in the slot 1 2 a of the spacer 12; a plurality of bonding wires 14 for electrically connecting, the bonding wire 14 is electrically The wafer carrier 10, the first wafer 1 1 , the spacer 1 2 and the second wafer 13 are connected to each other; and an encapsulant 15 for packaging, the encapsulant 15 is formed on the wafer carrier The first wafer 1 1 , the spacer 1 2 , the second wafer 13 , and the bonding wire 14 are coated on the 1 0. The above method for fabricating the stacked wafer semiconductor package 1 further includes: preparing a wafer carrier 10, above the wafer carrier 10

17567石夕品.ptd 第13頁 1246754 五、發明說明(8) 用面1 0 a上黏置至少一第一晶片1 1,使該第一晶片1 1位在 晶片承載件1 0上方,於該第一晶片1 1頂面黏置一具有開槽 1 2 a之間隔板1 2,再將一第二晶片1 3黏置在第一晶片1 1上 方,且使該第二晶片1 3容設於該間隔板1 2的開槽1 2 a内, 接著,依線路佈局設計而以銲線1 4電性連接上述晶片承載 件1 0、第一晶片1 1、間隔板1 2及第二晶片1 3,最後,再以 一封裝膠體1 5成形在晶片承載件1 0上以包覆第一晶片1卜 間隔板1 2、第二晶片1 3及銲線1 4疊設且電性連接完成後之 結構,即完成封裝製程。 前述之開槽1 2 a均係貫穿該間隔板1 2,且該第二晶片 1 3之面積尺寸係小於該間隔板1 2之開槽1 2 a,而使該第二 晶片1 3可容設在該開槽1 2 a内而疊設於該第一晶片1 1之頂 面,以令該第二晶片1 3可直接接觸疊設在第一晶片1 1頂 面,且由於該第一晶片1 1與第二晶片1 3係為相同材質,其 兩者之熱膨脹係數相同,故而若相較於習知結構,本發明 之封襞件發生因接觸介面熱膨脹係數不匹配所致之脫層現 象的可能性將大幅降低,該第一晶片1 1及第二晶片1 3將不 致受溫度影響而破壞。 第1 A圖及第1 B圖中該晶片承載件1 0上方係設有複數個 銲線墊(finger) 10b,而該第一晶片11頂面具有一作用面 1 1 a,於作用面1 1 a上環設有複數個鲜墊(b ο n d i n g pad ) 1 1 b,得以銲線1 4連接第一晶片1 1之銲墊1 1 b與晶片承 載件1 0的銲線墊1 0 b,使第一晶片1 1與晶片承載件1 0電性 連接;同時,該間隔板1 2頂面具有一作用面1 2 b,其上環17567石夕品.ptd Page 13 1246754 V. Description of the Invention (8) The at least one first wafer 1 1 is adhered on the surface 10 a, so that the first wafer 11 is above the wafer carrier 10, The top surface of the first wafer 1 1 is adhered to a spacer 12 between the trenches 1 2 a, and a second wafer 1 3 is pasted over the first wafer 1 1 , and the second wafer 13 is filled. The wafer carrier 10, the first wafer 1 1 , the spacer 1 2 and the second are electrically connected by the bonding wire 14 according to the layout design of the spacer 1 2 . The wafer 13 is finally formed on the wafer carrier 10 by an encapsulant 15 to cover the first wafer 1 , the second wafer 13 and the bonding wire 14 are stacked and electrically connected. After the completion of the structure, the packaging process is completed. The slot 1 2 a is penetrated through the spacer 12 , and the area of the second wafer 13 is smaller than the slot 1 2 a of the spacer 12 , so that the second chip 13 can be accommodated. The first wafer 11 is disposed on the top surface of the first wafer 1 1 so as to be in direct contact with the top surface of the first wafer 1 1 , and due to the first The wafer 11 and the second wafer 13 are made of the same material, and the thermal expansion coefficients of the two are the same. Therefore, if the sealing member of the present invention is delaminated due to the mismatch of the thermal expansion coefficient of the contact interface, compared with the conventional structure. The probability of the phenomenon will be greatly reduced, and the first wafer 11 and the second wafer 13 will not be damaged by temperature. In FIG. 1A and FIG. 1B, a plurality of wire bonding pads 10b are disposed on the wafer carrier 10, and the top surface of the first wafer 11 has a working surface 1 1 a on the active surface 1 1 a upper ring is provided with a plurality of fresh pads (b ο nding pad ) 1 1 b, and the bonding wires 1 4 are connected to the bonding pads 1 1 b of the first wafer 1 1 and the bonding pads 10 b of the wafer carrier 10, The first wafer 11 is electrically connected to the wafer carrier 10; at the same time, the top mask of the spacer 12 has an active surface 1 2 b, and the upper ring thereof

]7567石夕品.ptd 第14頁 1246754 五、發明說明(9) 設有複數個銲線墊1 2 c,且該間隔板1 2之面積尺寸小於第 一晶片1 1 ’使該間隔板! 2疊設在第一晶片1 1的頂面後,得 以銲線1 4連接第一晶片1 1之銲墊1 1 b與間隔板1 2的銲線墊 1 2 c ’以電性連接該第一晶片1 1與間隔板1 2。 再者’该第二晶片1 3頂面具有一作用面1 3 a,於作用 面1 3a上設有複數個銲墊1 3b,使該第二晶片1 3容置在間隔 板1 2的開槽1 2 a後,得以銲線丨4連接第二晶片丨3之銲墊1 3 b 與間隔板1 2的銲線墊1 2 c,進而電性連接該第二晶片1 3與 間隔板1 2,而由於該第二晶片丨3係容置在間隔板丨2的開槽 1 2 a内’使該第二晶片1 3與間隔板1 2位在同一水平面上, 而得在一平面上進行連接,此設計將使該銲線丨4的連接長 度縮短’並可免除習知連接方式中線弧高度過高的的缺 失’進而得以大幅降低整體封裝件的高度。 本發明之電性連接設計亦可如第2圖所示,令該間隔 板1 2之銲線墊1 2C得以銲線丨4電性連接晶片承載件丨〇之銲 線墊i〇b,將使該間隔板12可與晶片承載件1〇直接進行電 性連接,同樣可達本發明之跳線與電訊傳輸功效。 因此藉由本發明所設計之間隔板1 2與其開槽1 2 a, 以將該第二晶# i 3容設在該開槽! 2a内,將可大幅曰降低整 體封裝件之高度’亦得降低銲線長度與線 小封裝與提升電性之…此外,由於其整體;:屬 Γ,目之ΐ流阻力降低’而可得-較::模壓品 Α 十τ、成虱泅 而方;後續高溫製程產生 乳爆(popcorn)現象,而相較於習知技術,本發明之晶片7567石夕品.ptd Page 14 1246754 V. INSTRUCTION DESCRIPTION (9) A plurality of bonding pads 1 2 c are provided, and the area of the spacer 12 is smaller than the first wafer 1 1 ' to make the spacer! 2, after being stacked on the top surface of the first wafer 11 , the bonding wire 1 1 b of the first wafer 1 1 and the bonding pad 1 2 c ' of the spacer 1 2 are electrically connected to the first A wafer 11 and a spacer 1 2 are provided. Furthermore, the top mask of the second wafer 1 has an active surface 13 3 a, and a plurality of pads 13 b are disposed on the active surface 13 3 to accommodate the second wafer 13 in the opening of the spacer 1 2 . After the slot 1 2 a, the bonding pad 4 is connected to the bonding pad 1 3 b of the second wafer 3 and the bonding pad 1 2 c of the spacer 1 2 to electrically connect the second wafer 13 and the spacer 1 2, and because the second wafer cassette 3 is received in the slot 1 2 a of the spacer plate 2, the second wafer 13 is placed on the same level as the spacer plate 12, and is obtained on a plane. By making the connection, this design will shorten the connection length of the wire bond 4 and can eliminate the lack of high line arc height in the conventional connection mode, thereby greatly reducing the height of the overall package. The electrical connection design of the present invention can also be as shown in FIG. 2, so that the bonding pad 1 2C of the spacer 12 is electrically connected to the bonding pad 〇4 of the wafer carrier by the bonding wire 4 The spacer 12 can be directly electrically connected to the wafer carrier 1 ,, and can also achieve the jumper and telecommunication transmission efficiency of the present invention. Therefore, the partition 12 and the groove 1 2 a are designed by the present invention to accommodate the second crystal # i 3 in the slot! In 2a, it will greatly reduce the height of the whole package. It also reduces the length of the wire and the small package and enhances the electrical properties. In addition, due to its overall structure, it is a defect, and the turbulence resistance of the mesh is reduced. - comparison:: molded product Α ten τ, into a square; subsequent high-temperature process produces a popcorn phenomenon, and compared to the prior art, the wafer of the present invention

]7567石夕品.ptd 第15頁 1246754 五、發明說明(10) 相互堆疊,其熱澎脹係數相同,故而亦可避免習知結構中 晶片與基板因熱膨脹係數不匹配而脫層之現象。 前述所揭示之本發明堆豐式晶片半導體封裝件中,其 晶片承載件1 0係可有各種設計形式,而得為任一習知晶片 承載件,例如第3圖中即進一步揭示該晶片承載件1 0為一 導線架(lead frame) 10’,而該導線架1〇’上具有一晶片座 1 0 a ’,得將上述之第一晶片1 1及疊設在其上的間隔板1 2及 弟 >一晶片1 3黏裝在晶片座10a上’再以在干線1 4進行電性連 接,最後再以封裝膠體1 5完成封裝,即可藉由導線架1 〇, 而與外部裝置電性連接,此為本發明之具體實施例。 再如弟4圖,係揭示該晶片承載件1 〇為一印刷電路板 (printed circuit board) 10”,且該印刷電路板 1〇”係為 一增層式基板(Bui 1 dip Substrate)或壓合式基板 (Laminated Substrate),於該印刷電路板1〇”上具有一至 少一晶片座1 0a” ’且在印刷電路板1 〇”底面植接有複數個 銲球10bn,得將上述之第一晶片工陳置在該晶片座1〇,, 亡’,可重覆前述之步驟將間隔板丨2及第二晶片丨3疊設在 2 一,片1 1上,接著以銲線丨4進行電性連接,再以封裝膠 體1 5兀成封裝’而得藉由銲球丨〇 b π以與外部裝置進行電性 連接’此為本發明之第二具體實施例。 請參閱第5Α圖,係為多晶片疊設封裝之實施,係在晶 =承載件1 〇上方先裝置第一晶片i i,再於第一晶片i i上方 =:間隔板1 2及第二晶片1 3,再於第二晶片i 3頂面疊裝第 二θ曰片1 6,然後以銲線1 4進行電性連接及以封裝膠體1 5完7567石夕品.ptd Page 15 1246754 V. INSTRUCTIONS (10) Stacking on each other, the thermal expansion coefficient is the same, so that the phenomenon that the wafer and the substrate are delaminated due to the mismatch of thermal expansion coefficient can be avoided. In the above-mentioned stacked wafer semiconductor package of the present invention, the wafer carrier 10 can have various designs, and can be any conventional wafer carrier. For example, in FIG. 3, the wafer carrier is further disclosed. The device 10 is a lead frame 10', and the lead frame 1' has a wafer holder 10 a ', and the first wafer 11 and the spacer 1 stacked thereon are provided. 2 and the younger> a wafer 1 3 is adhered to the wafer holder 10a' and then electrically connected to the main line 14 and finally packaged with the encapsulant 15 5, which can be externally connected by the lead frame 1 The device is electrically connected, which is a specific embodiment of the invention. Further, as shown in FIG. 4, the wafer carrier 1 is disclosed as a printed circuit board 10", and the printed circuit board is a laminated substrate (Bui 1 dip Substrate) or pressure. Laminated Substrate, having at least one wafer holder 10a" on the printed circuit board 1" and having a plurality of solder balls 10bn implanted on the bottom surface of the printed circuit board 1" The wafer holder is placed on the wafer holder, and the spacers 丨2 and the second wafer cassette 3 are stacked on the sheet 1 and the second wafer 丨3, and then the bonding wire 丨4 is performed. The second embodiment is a second embodiment of the present invention. The second embodiment of the present invention is shown in FIG. 5, which is electrically connected, and then encapsulated by a package of plastics, and is electrically connected to an external device by solder balls b π. The implementation of the multi-wafer stacking package is to first mount the first wafer ii above the crystal=carrier 1 , and then over the first wafer ii =: the spacer 1 2 and the second wafer 13 , and then the second The second surface of the wafer i 3 is stacked on the top surface of the second θ 1 16 , and then electrically connected by the bonding wire 14 to encapsulate the colloid 1 5 Finish

17567矽品.ptd17567 products.ptd

第16頁 1246754 五、發明說明(11) 成封裝,此為本發明之第三具體實施例;或如第5 B圖所 示,係在晶片承載件1 0上方先裝置第一晶片1 1,而在第一 晶片1 1頂面先疊設第二晶片1 3,再於第二晶片1 3頂面疊設 間隔板1 2及第三晶片1 6,之後再以銲線1 4電性連接及以封 裝膠體1 5完成封裝,此為本發明之多晶片疊裝之第四具體 實施例。 上述實施例僅為例示性說明本發明之原理及其功效, 而非用於限制本發明。任何熟習此技藝之人士均可在不違 背本發明之精神及範疇下,對上述實施例進行修飾與變 化。因此,本發明之權利保護範圍,應如後述之申請專利 範圍所列。Page 16 1246754 V. INSTRUCTION DESCRIPTION (11) Forming a package, which is a third embodiment of the present invention; or as shown in FIG. 5B, first mounting a first wafer 1 1 above the wafer carrier 10 The second wafer 13 is stacked on the top surface of the first wafer 1 1 , and the spacers 1 2 and the third wafers 16 are stacked on the top surface of the second wafer 13 , and then electrically connected by the bonding wires 14 . And encapsulating with the encapsulant 15 is a fourth embodiment of the multi-wafer stack of the present invention. The above-described embodiments are merely illustrative of the principles of the invention and its advantages, and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the patent application to be described later.

17567石夕品.ptd 第]7頁 1246754 圖式簡單說明 【圖式簡單說明】 第1 A圖係為本發明堆疊式晶片之半導體封裝件及其製 法之剖視圖; 第1 B圖係為本發明堆疊式晶片之半導體封裝件及其製 法之上視圖; 第2圖係為本發明堆疊式晶片之半導體封裝件及其製 法之鲜線連接的另一貫施組合剖視圖, 弟3圖係為本發明以導線架為晶片承載件之堆豐式晶 片之半導體封裝件及其製法的剖視圖; 第4圖係為本發明以電路板為晶片承載件之堆豐式晶 片之半導體封裝件及其製法的第二實施剖視圖; 第5 A圖係為本發明堆疊式晶片之半導體封裝件及其製 法之多晶片疊設封裝的第三實施組合剖視圖; 第5 B圖係為本發明堆疊式晶片之半導體封裝件及其製 法之多晶片疊設封裝的第四實施組合剖視圖; 第6 A圖係為美國專利第5,7 7 7,3 4 5號所揭示之半導體 封裝件之剖視圖; 第6 B圖係為美國專利第5,7 7 7,3 4 5號所揭示之半導體 封裝件之上視圖; 第7圖係為美國專利第6,0 0 5,7 7 8號所揭示之半導體封 裝件之剖視圖;以及 第8圖係為美國專利第5,7 1 5,1 4 7號所揭示之半導體封 裝件之剖視圖。17567石夕品.ptd第第7页1246754 BRIEF DESCRIPTION OF THE DRAWINGS [Simplified Schematic] FIG. 1A is a cross-sectional view showing a semiconductor package of a stacked wafer of the present invention and a method for fabricating the same; A top view of a semiconductor package of a stacked wafer and a method for fabricating the same; FIG. 2 is a cross-sectional view showing another embodiment of the semiconductor package of the stacked wafer of the present invention and a method for manufacturing the same; A cross-sectional view of a semiconductor package of a stack of wafers of a wafer carrier and a method for fabricating the same; FIG. 4 is a second embodiment of a semiconductor package of a stack of wafers with a circuit board as a wafer carrier and a method for fabricating the same FIG. 5A is a cross-sectional view showing a third embodiment of a stacked package of a semiconductor package of the present invention and a multi-wafer stacked package of the same; FIG. 5B is a semiconductor package of the stacked wafer of the present invention; A cross-sectional view of a fourth embodiment of a multi-wafer stacked package of the method of manufacturing; FIG. 6A is a cross-sectional view of the semiconductor package disclosed in US Pat. No. 5,7,7,3, 4, 5; A top view of a semiconductor package disclosed in U.S. Patent No. 5,7, 7, 7, 4, and a sectional view of a semiconductor package disclosed in U.S. Patent No. 6,0,0,7,8,8 And Figure 8 is a cross-sectional view of the semiconductor package disclosed in U.S. Patent No. 5,7,155,147.

]7567石夕品.ptd 第18頁 1246754 1 堆疊式晶片半導體封裝件 圖式簡單說明 10、 50 晶 片 承 載 件 10,、 20 導 線 架 1 οπ 印 刷 電 路 板 10a、 1 la 、 12b、 1; 3a作 用 面 10a, > 10 aM > 201 晶 片 座 10b、 12c 銲 線 墊 10bM 銲 球 1卜 21 > 51 、6 1 第 一 晶 片 lib、 13b 銲 墊 12a 開 槽 12 間 隔 板 13、 22> 53 ^ 62 第 二 晶 片 14、 23^ 54 ^ 66 銲 線 15、 24 封 裝 膠 體 16 第 二 晶 片 202 導 腳 21卜 221 長 鲜 墊 511 表 面 52 間 隔 物 601 内 部 接 腳 60 承 載 件 63^ 64、 65 電 路 板7567石夕品.ptd Page 18 12467754 1 Stacked wafer semiconductor package diagram simple description 10, 50 wafer carrier 10, 20 lead frame 1 οπ printed circuit board 10a, 1 la, 12b, 1; 3a function Face 10a, > 10 aM > 201 wafer holder 10b, 12c bond pad 10bM solder ball 1b 21 > 51, 6 1 first wafer lib, 13b pad 12a slot 12 spacer 13 , 22 > 53 ^ 62 second wafer 14, 23 ^ 54 ^ 66 bonding wire 15, 24 encapsulant 16 second wafer 202 pin 21 221 long fresh pad 511 surface 52 spacer 601 internal pin 60 carrier 63 ^ 64, 65 circuit board

17567石夕品· ptd 第19頁17567石夕品· ptd第19页

Claims (1)

1246754 六、申請專利範圍 1. 一種堆疊式晶片半導體封裝件,係包括: 晶片承載件,係具有一承載表面; 至少一第一晶片,係接置於該晶片承載件之承載 表面上; 至少一間隔板,係接置於該第一晶片未與該晶片 承載件接置之相對表面上,且該間隔板上係開設有一 開槽; 至少一第二晶片,係容設於該間隔板之開槽内, 且接置於該第一晶片未與該晶片承載件接置之相對表 面上; 複數個銲線,係用以電性連接該晶片承載件、第 一晶片、間隔板及弟二晶片,以及 封裝膠體,係成形在該晶片承載件上以包覆第一 晶片、間隔板、弟*一·晶片及鲜線。 2. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該晶片承載件係為一導線架(1 e a d f r a m e )。 3. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該晶片承載件係為一印刷電路板。 4. 如申請專利範圍第3項之堆疊式晶片半導體封裝件,其 中,該印刷電路板係為一增層式基板(B u i 1 d - u p Substrate)。 5. 如申請專利範圍第3項之堆疊式晶片半導體封裝件,其 中,該印刷電路板係為一壓合式基板(L a m i n a t e d Substrate)。1246754 6. Patent application scope 1. A stacked wafer semiconductor package, comprising: a wafer carrier having a bearing surface; at least one first wafer attached to a bearing surface of the wafer carrier; at least one a spacer plate is disposed on an opposite surface of the first wafer that is not connected to the wafer carrier, and a slit is formed on the spacer; at least one second chip is disposed in the spacer a plurality of bonding wires are electrically connected to the wafer carrier, the first wafer, the spacer, and the second wafer, and are disposed on the opposite surface of the first wafer not connected to the wafer carrier; And the encapsulant is formed on the wafer carrier to cover the first wafer, the spacer, the wafer, and the fresh wire. 2. The stacked wafer semiconductor package of claim 1, wherein the wafer carrier is a lead frame (1 e a d f r a m e ). 3. The stacked wafer semiconductor package of claim 1, wherein the wafer carrier is a printed circuit board. 4. The stacked wafer semiconductor package of claim 3, wherein the printed circuit board is a build-up substrate (B u i 1 d - u p Substrate). 5. The stacked wafer semiconductor package of claim 3, wherein the printed circuit board is a laminated substrate (L a m i n a t e d Substrate). 17567石夕品.ptd 第20頁 1246754 六、申請專利範圍 6. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中’該開槽係貫穿該間隔板。 7. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該間隔板之面積尺寸係小於該第一晶片。 8. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該第二晶片之面積尺寸係小於該間隔板之開槽。 9. 如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該間隔板係為一印刷電路板。 1 0.如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該晶片承載件之承載表面上係具有複數個銲線墊 (finger)0 1 1.如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該第一晶片未與該晶片承載件接置之相對表面上 係設有複數個銲塾(b ο n d i n g p a d )。 1 2 .如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該間隔板未與該第一晶片接置之相對表面上係設 有複數個銲線墊。 1 3.如申請專利範圍第1項之堆疊式晶片半導體封裝件,其 中,該第二晶片未與該第一晶片接置之表面上係設有 複數個銲墊。 1 4. 一種堆疊式晶片半導體封裝件之製法,係包含以下步 驟: 製備一晶片承載件,其係具有一接置表面; 將至少一第一晶片接置於該晶片承載件之接置表17567 石夕品.ptd Page 20 1246754 6. Patent application scope 6. The stacked wafer semiconductor package of claim 1, wherein the slot is through the spacer. 7. The stacked wafer semiconductor package of claim 1, wherein the spacer has an area smaller than the first wafer. 8. The stacked wafer semiconductor package of claim 1, wherein the second wafer has an area smaller than a slot of the spacer. 9. The stacked wafer semiconductor package of claim 1, wherein the spacer is a printed circuit board. 10. The stacked wafer semiconductor package of claim 1, wherein the carrier surface of the wafer carrier has a plurality of wire mats 0 1 1. As claimed in claim 1 A stacked wafer semiconductor package, wherein a plurality of solder pads are disposed on an opposite surface of the first wafer that is not attached to the wafer carrier. The stacked wafer semiconductor package of claim 1, wherein a plurality of bonding pads are disposed on an opposite surface of the spacer that is not attached to the first wafer. 1. The stacked wafer semiconductor package of claim 1, wherein the second wafer is not provided with a plurality of pads on the surface of the first wafer. 1 . A method of fabricating a stacked wafer semiconductor package, comprising the steps of: preparing a wafer carrier having an attachment surface; and attaching at least one first wafer to the wafer carrier 17567石夕品.ptd 第21頁 1246754 六、申請專利範圍 面上; 製備至少一間隔板,該間隔板上係設有一開槽, 且將該間隔板接置於該第一晶片未與該晶片承載件接 置之相對表面上; 製備至少一第二晶片,且將該第二晶片接置於該 第一晶片未與該晶片承載件接置之相對表面上,而使 該第二晶片容設於該間隔板之開槽内; 以銲線電性連接該晶片承載件、第一晶片、間隔 板及弟^一晶片,以及 於該晶片承載件上成形一封裝膠體以包覆該第一 晶片、間隔板、第二晶片及銲線。 1 5 .如申請專利範圍第1 4項之製法,其中,該晶片承載件 係為一導線架(lead frame)。 1 6 .如申請專利範圍第1 4項之製法,其中,該晶片承載件 係為一印刷電路板。 1 7 .如申請專利範圍第1 6項之製法,其中,該印刷電路板 係為一增層式基板(Build-up Substrate)。 1 8 .如申請專利範圍第1 6項之製法,其中,該印刷電路板 係為一壓合式基板(Laminated Substrate)。 1 9 .如申請專利範圍第1 4項之製法,其中,該開槽係貫穿 該間隔板。 2 0 .如申請專利範圍第1 4項之製法,其中,該間隔板之面 積尺寸係小於該第一晶片。 2 1.如申請專利範圍第1 4項之製法,其中,該第二晶片之17567石夕品.ptd Page 21 12467754 VI. Application for patent coverage; preparation of at least one spacer, the spacer is provided with a slot, and the spacer is placed on the first wafer and the wafer ???the opposite surface of the carrier; the at least one second wafer is prepared, and the second wafer is placed on the opposite surface of the first wafer not connected to the wafer carrier, and the second wafer is accommodated The chip carrier, the first wafer, the spacer, and the wafer are electrically connected by a bonding wire, and an encapsulant is formed on the wafer carrier to cover the first wafer. , spacer, second wafer and bonding wire. The method of claim 14, wherein the wafer carrier is a lead frame. The method of claim 14, wherein the wafer carrier is a printed circuit board. The method of claim 16, wherein the printed circuit board is a build-up substrate. 18. The method of claim 16, wherein the printed circuit board is a laminated substrate. The method of claim 14, wherein the slotting system extends through the spacer. The method of claim 14, wherein the spacer has a smaller area than the first wafer. 2 1. The method of claim 14, wherein the second chip 17567石夕品.ptd 第22頁 1246754 六、申請專利範圍 面積尺寸係小於該間隔板之開槽。 2 2 .如申請專利範圍第1 4項之製法,其中,該間隔板係為 一印刷電路板。 2 3 .如申請專利範圍第1 4項之製法,其中,該晶片承載件 之承載表面上係具有複數個銲線墊(f i n g e r )。 2 4 .如申請專利範圍第1 4項之製法,其中,該第一晶片未 與該晶片承載件接置之相對表面上係設有複數個銲墊 (bonding pad)0 2 5 .如申請專利範圍第1 4項之製法,其中,該間隔板未與 該第一晶片接置之相對表面上係設有複數個銲線墊。 2 6 .如申請專利範圍第1 4項之製法,其中,該第二晶片未 與該第一晶片接置之表面上係設有複數個銲墊。 2 7. —種堆疊式晶片半導體封裝件,係包括: 晶片承載件,係具有一承載表面; 至少一第一晶片,係接置於該晶片承載件之承載 表面上; 至少一間隔板,係接置於該第一晶片未與該晶片 承載件接置之相對表面上,且該間隔板上係開設有一 開槽; 至少一第二晶片,係容設於該間隔板之開槽内, 且接置於該第一晶片未與該晶片承載件接置之相對表 面上; 至少一第三晶片,接置於該第二晶片未與該第一 晶片接置之相對表面上;17567石夕品.ptd Page 22 1246754 VI. Scope of Application The area size is smaller than the slot of the spacer. 2 2. The method of claim 14, wherein the spacer is a printed circuit board. The method of claim 14, wherein the carrier surface of the wafer carrier has a plurality of wire pads (f i n g e r ). The method of claim 14, wherein the first wafer is not attached to the wafer carrier, and a plurality of bonding pads are provided on the opposite surface of the wafer carrier. The method of claim 14, wherein the plurality of bonding pads are disposed on the opposite surface of the spacer that is not attached to the first wafer. The method of claim 14, wherein the second wafer is not provided with a plurality of pads on the surface of the first wafer. 2 7. A stacked wafer semiconductor package, comprising: a wafer carrier having a bearing surface; at least one first wafer attached to a bearing surface of the wafer carrier; at least one spacer And the first wafer is disposed on the opposite surface of the spacer, and the spacer is provided with a slot; the at least one second chip is received in the slot of the spacer, and And disposed on an opposite surface of the first wafer that is not connected to the wafer carrier; at least one third wafer is disposed on an opposite surface of the second wafer that is not connected to the first wafer; 17567石夕品.ptd 第23頁 1246754 六、申請專利範圍 複數個銲線,係用以電性連接該晶片承載件、第 一晶片、間隔板、弟二晶片及弟二晶片,以及 封裝膠體,係成形在該晶片承載件上以包覆第一 晶片、間隔板、第二晶片、第三晶片及銲線。 2 8 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該晶片承載件係為一導線架(1 e a d f r a m e )。 2 9 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中’該晶片承載件係為一印刷電路板。 3 0 .如申請專利範圍第2 9項之堆疊式晶片半導體封裝件, 其中,該印刷電路板係為一增層式基板(B u i 1 d - u p Substrate)° 3 1.如申請專利範圍第2 9項之堆疊式晶片半導體封裝件, 其中,該印刷電路板係為一壓合式基板(L a m i n a t e d Substrate)o 3 2 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該開槽係貫穿該間隔板。 3 3 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該間隔板之面積尺寸係小於該第一晶片。 3 4 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該第二晶片之面積尺寸係小於該間隔板之開 槽。 3 5 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該間隔板係為一印刷電路板。 3 6 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件,17567石夕品.ptd Page 23 1246754 VI. Application for a patent range A plurality of bonding wires are used to electrically connect the wafer carrier, the first wafer, the spacer, the second wafer and the second wafer, and the encapsulant. Formed on the wafer carrier to cover the first wafer, the spacer, the second wafer, the third wafer, and the bonding wire. The stacked wafer semiconductor package of claim 27, wherein the wafer carrier is a lead frame (1 e a d f r a m e ). The stacked wafer semiconductor package of claim 27, wherein the wafer carrier is a printed circuit board. 3. The stacked wafer semiconductor package of claim 29, wherein the printed circuit board is a layered substrate (Bui 1 d - up Substrate) ° 1. The stacked chip semiconductor package of the ninth item, wherein the printed circuit board is a laminated substrate, wherein the stacked wafer semiconductor package of the second aspect of the patent application, wherein The slot extends through the spacer. 3. The stacked wafer semiconductor package of claim 27, wherein the spacer has an area smaller than the first wafer. The stacked wafer semiconductor package of claim 27, wherein the second wafer has an area smaller than the opening of the spacer. The stacked wafer semiconductor package of claim 27, wherein the spacer is a printed circuit board. 3 6. A stacked wafer semiconductor package as claimed in claim 27, 17567石夕品.ptd 第24頁 1246754 六、申請專利範圍 其中,該晶片承載件之承載表面上係具有複數個銲線 塾(finger)。 3 7 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該第一晶片未與該晶片承載件接置之相對表面 上係設有複數個銲塾(b ο n d i n g p a d )。 3 8 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該間隔板未與該第一晶片接置之相對表面上係 設有複數個銲線墊。 3 9 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該第二晶片未與該第一晶片接置之表面上係設 有複數個鲜塾。 4 0 .如申請專利範圍第2 7項之堆疊式晶片半導體封裝件, 其中,該第三晶片未與該第二晶片接置之表面上係設 有複數個銲墊。 4 1 . 一種堆疊式晶片半導體封裝件之製法,係包含以下步 驟: 製備一晶片承載件,其係具有一接置表面; 將至少一第一晶片接置於該晶片承載件之接置表 面上; 製備至少一間隔板,該間隔板上係設有一開槽, 且將該間隔板接置於該第一晶片未與該晶片承載件接 置之相對表面上; 製備至少一第二晶片,且將該第二晶片接置於該 第一晶片未與該晶片承載件接置之相對表面上,而使17567 石夕品.ptd Page 24 1246754 VI. Patent Application Range The carrier surface of the wafer carrier has a plurality of wire bonds. The stacked wafer semiconductor package of claim 27, wherein a plurality of solder bumps (b ο n d i n g p a d ) are disposed on an opposite surface of the first wafer that is not attached to the wafer carrier. The stacked wafer semiconductor package of claim 27, wherein a plurality of bonding pads are disposed on an opposite surface of the spacer that is not attached to the first wafer. The stacked wafer semiconductor package of claim 27, wherein the surface of the second wafer not attached to the first wafer is provided with a plurality of fresh slabs. 40. The stacked wafer semiconductor package of claim 27, wherein the third wafer is not provided with a plurality of pads on the surface of the second wafer. 4 1. A method of fabricating a stacked wafer semiconductor package, comprising the steps of: preparing a wafer carrier having an attachment surface; attaching at least one first wafer to an attachment surface of the wafer carrier Preparing at least one spacer, the spacer is provided with a slot, and the spacer is disposed on an opposite surface of the first wafer not connected to the wafer carrier; at least one second wafer is prepared, and Locating the second wafer on an opposite surface of the first wafer that is not attached to the wafer carrier 17567石夕品.ptd 第25頁 1246754 六、申請專利範圍 該第二晶片容設於該間隔板之開槽内; 製備至少一第三晶片,且將該第三晶片接置於該 第二晶片未與該第一晶片接置之相對表面上; 以銲線電性連接該晶片承載件、第一晶片、間隔 板、第二晶片及第三晶片;以及 於該晶片承載件上成形一封裝膠體以包覆該第一 晶片、間隔板、第二晶片、第三晶片及銲線。 4 2 .如申請專利範圍第4 1項之製法,其中,該晶片承載件 係為一導線架(1 e a d f r a m e )。 4 3 .如申請專利範圍第4 1項之製法,其中,該晶片承載件 係為一印刷電路板。 4 4 .如申請專利範圍第4 3項之製法,其中,該印刷電路板 係為一增層式基板(Build-up Substrate)。 4 5 .如申請專利範圍第4 3項之製法,其中,該印刷電路板 係為一壓合式基板(Laminated Substrate)。 4 6 .如申請專利範圍第4 1項之製法,其中,該開槽係貫穿 該間隔板。 4 7 .如申請專利範圍第4 1項之製法,其中,該間隔板之面 積尺寸係小於該第一晶片。 4 8 .如申請專利範圍第4 1項之製法,其中,該第二晶片之 面積尺寸係小於該間隔板之開槽。 4 9 .如申請專利範圍第4 1項之製法,其中,該間隔板係為 一印刷電路板。 5 0 .如申請專利範圍第4 1項之製法,其中,該晶片承載件17567石夕品.ptd page 25 1246754 6. Patent application scope The second wafer is accommodated in the slot of the spacer; at least one third wafer is prepared, and the third wafer is placed on the second wafer An opposite surface of the first wafer; the wafer carrier, the first wafer, the spacer, the second wafer, and the third wafer are electrically connected by a bonding wire; and an encapsulant is formed on the wafer carrier The first wafer, the spacer, the second wafer, the third wafer, and the bonding wire are covered. 4 2. The method of claim 41, wherein the wafer carrier is a lead frame (1 e a d f r a m e ). 4: The method of claim 41, wherein the wafer carrier is a printed circuit board. 4: The method of claim 4, wherein the printed circuit board is a build-up substrate. 4: The method of claim 4, wherein the printed circuit board is a laminated substrate. 4: The method of claim 41, wherein the slotting system extends through the spacer. The method of claim 41, wherein the spacer has a smaller area than the first wafer. 4: The method of claim 41, wherein the second wafer has an area size smaller than a slot of the spacer. 4 9. The method of claim 41, wherein the spacer is a printed circuit board. 50. The method of claim 41, wherein the wafer carrier 17567石夕品.ptd 第26頁 1246754 六、申請專利範圍 之承載表面上係具有複數個銲線墊(f i n g e r )。 5 1 .如申請專利範圍第4 1項之製法,其中,該第一晶片未 與該晶片承載件接置之相對表面上係設有複數個銲墊 (bonding pad)。 5 2 .如申請專利範圍第4 1項之製法,其中,該間隔板未與 該第一晶片接置之相對表面上係設有複數個銲線墊。 5 3 .如申請專利範圍第4 1項之製法,其中,該第二晶片未 與該第一晶片接置之表面上係設有複數個銲墊。 5 4 .如申請專利範圍第4 1項之製法,其中,該第三晶片未 與該第二晶片接置之表面上係設有複數個銲墊。 5 5. —種堆疊式晶片半導體封裝件,係包括: 晶片承載件,係具有一承載表面; 至少一第一晶片,係接置於該晶片承載件之承載 表面上; 至少一第二晶片,接置於該第一晶片未與該晶片 承載件接置之相對表面上; 至少一間隔板,係接置於該第二晶片未與該第一 晶片接置之相對表面上,且該間隔板上係開設有一開 槽; 至少一第三晶片,係容設於該間隔板之開槽内, 且接置於該第二晶片未與第一晶片接置之相對表面 上; 複數個銲線,係用以電性連接該晶片承載件、第 一晶片、弟二晶片、間隔板及弟二晶片,以及17567 石夕品.ptd Page 26 1246754 VI. The patented range has a plurality of wire mats (f i n g e r ) on the load bearing surface. The method of claim 4, wherein a plurality of bonding pads are disposed on an opposite surface of the first wafer that is not attached to the wafer carrier. The method of claim 4, wherein a plurality of wire mats are disposed on an opposite surface of the spacer that is not attached to the first wafer. The method of claim 4, wherein a plurality of pads are provided on the surface of the second wafer that is not attached to the first wafer. The method of claim 4, wherein the third wafer is not attached to the second wafer with a plurality of pads. 5 5. A stacked wafer semiconductor package, comprising: a wafer carrier having a bearing surface; at least one first wafer attached to a bearing surface of the wafer carrier; at least one second wafer, And being disposed on an opposite surface of the first wafer not connected to the wafer carrier; at least one spacer is disposed on an opposite surface of the second wafer not connected to the first wafer, and the spacer The upper system is provided with a slot; at least one third chip is received in the slot of the spacer and is disposed on the opposite surface of the second wafer not connected to the first die; a plurality of bonding wires, Used to electrically connect the wafer carrier, the first wafer, the second wafer, the spacer, and the second wafer, and 17567石夕品.ptd 第27頁 1246754 六、申請專利範圍 封裝膠體,係成形在該晶片承載件上以包覆第一 晶片、第二晶片、間隔板、第三晶片及銲線。 5 6 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該晶片承載件係為一導線架(1 e a d f r a m e )。 5 7 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該晶片承載件係為一印刷電路板。 5 8 .如申請專利範圍第5 7項之堆疊式晶片半導體封裝件, 其中,該印刷電路板係為一增層式基板(B u i 1 d - u p Substrate)〇 5 9 .如申請專利範圍第5 7項之堆疊式晶片半導體封裝件, 其中,該印刷電路板係為一壓合式基板(L a m i n a t e d Substrate )o 6 0 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該開槽係貫穿該間隔板。 6 1 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該間隔板之面積尺寸係小於該第二晶片。 6 2 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該第三晶片之面積尺寸係小於該間隔板之開 槽。 6 3 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該間隔板係為一印刷電路板。 6 4 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該晶片承載件之承載表面上係具有複數個銲線 塾(finger)。17567 石夕品.ptd Page 27 1246754 VI. Application Patent The encapsulant is formed on the wafer carrier to cover the first wafer, the second wafer, the spacer, the third wafer and the bonding wire. The stacked wafer semiconductor package of claim 5, wherein the wafer carrier is a lead frame (1 e a d f r a m e ). The stacked wafer semiconductor package of claim 5, wherein the wafer carrier is a printed circuit board. 5 8 . The stacked wafer semiconductor package of claim 57, wherein the printed circuit board is a layered substrate (Bui 1 d - up Substrate) 〇 5 9 . The stacked-wafer semiconductor package of the fifth aspect, wherein the printed circuit board is a laminated substrate, and the stacked wafer semiconductor package of the fifth aspect of the patent application, wherein The slot extends through the spacer. The stacked wafer semiconductor package of claim 5, wherein the spacer has an area smaller than the second wafer. The stacked wafer semiconductor package of claim 5, wherein the third wafer has an area smaller than a slot of the spacer. 6. The stacked wafer semiconductor package of claim 5, wherein the spacer is a printed circuit board. The stacked wafer semiconductor package of claim 5, wherein the carrier surface of the wafer carrier has a plurality of wire bonds. ]7567石夕品.ptd 第28頁 1246754 六、申請專利範圍 6 5 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該第一晶片未與該晶片承載件接置之相對表面 上係設有複數個銲塾(b ο n d i n g p a d )。 6 6 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該第二晶片未與該第一晶片接置之表面上係設 有複數個銲墊。 6 7 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該間隔板未與該第二晶片接置之相對表面上係 設有複數個銲線墊。 6 8 .如申請專利範圍第5 5項之堆疊式晶片半導體封裝件, 其中,該第三晶片未與該第二晶片接置之表面上係設 有複數個銲墊。 6 9. —種堆疊式晶片半導體封裝件之製法,係包含以下步 驟: 製備一晶片承載件,其係具有一接置表面; 將至少一第一晶片接置於該晶片承載件之接置表 面上; 製備至少一第二晶片,且將該第二晶片接置於該 第一晶片未與該晶片承載件接置之相對表面上; 製備至少一間隔板,該間隔板上係設有一開槽, 且將該間隔板接置於該弟二晶片未與弟'一^晶片接置之 相對表面上; 製備至少一第三晶片,且將該第三晶片接置於該 第二晶片未與該第一晶片接置之相對表面上,而使該[7] 567 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 A plurality of solder bumps (b ο ndingpad) are attached to the opposite surface. 6. The stacked wafer semiconductor package of claim 5, wherein the second wafer is not provided with a plurality of pads on the surface of the first wafer. The stacked wafer semiconductor package of claim 5, wherein the spacer is not provided with a plurality of bonding pads on the opposite surface of the second wafer. 6. The stacked wafer semiconductor package of claim 5, wherein the third wafer is not provided with a plurality of pads on the surface of the second wafer. 6 9. A method of fabricating a stacked wafer semiconductor package, comprising the steps of: preparing a wafer carrier having an attachment surface; attaching at least one first wafer to an attachment surface of the wafer carrier Preparing at least one second wafer, and attaching the second wafer to an opposite surface of the first wafer not attached to the wafer carrier; preparing at least one spacer, the spacer having a slot And the spacer is placed on the opposite surface of the second wafer that is not connected to the wafer; at least one third wafer is prepared, and the third wafer is placed on the second wafer The first wafer is attached to the opposite surface, and the 17567石夕品· ptd 第29頁 1246754 六、申請專利範圍 第三晶片容設於該間隔板之開槽内; 以銲線電性連接該晶片承載件、第一晶片、第二 晶片、間隔板及第三晶片;以及 於該晶片承載件上成形一封裝膠體以包覆該第一 晶片、第二晶片、間隔板、第三晶片及銲線。 7 0 .如申請專利範圍第6 9項之製法,其中,該晶片承載件 係為一導線架(lead frame)。 7 1 .如申請專利範圍第6 9項之製法,其中,該晶片承載件 係為一印刷電路板。 7 2 .如申請專利範圍第7 1項之製法,其中,該印刷電路板 係為一增層式基板(Build-up Substrate)。 7 3 .如申請專利範圍第7 1項之製法,其中,該印刷電路板 係為一壓合式基板(Laminated Substrate)。 7 4 .如申請專利範圍第6 9項之製法,其中,該開槽係貫穿 該間隔板。 7 5 .如申請專利範圍第6 9項之製法,其中,該間隔板之面 積尺寸係小於該弟二晶片。 7 6 .如申請專利範圍第6 9項之製法,其中,該第三晶片之 面積尺寸係小於該間隔板之開槽。 7 7 .如申請專利範圍第6 9項之製法,其中,該間隔板係為 一印刷電路板。 7 8 .如申請專利範圍第6 9項之製法,其中,該晶片承載件 之承載表面上係具有複數個銲線墊(f i n g e r )。 7 9 .如申請專利範圍第6 9項之製法,其中,該第一晶片未17567石夕品·ptd Page 29 1246754 VI. Patent application The third wafer is accommodated in the slot of the spacer; the wafer carrier, the first wafer, the second wafer, and the spacer are electrically connected by a bonding wire. And a third wafer; and forming an encapsulant on the wafer carrier to cover the first wafer, the second wafer, the spacer, the third wafer, and the bonding wire. 70. The method of claim 96, wherein the wafer carrier is a lead frame. The method of claim 96, wherein the wafer carrier is a printed circuit board. 7 2. The method of claim 71, wherein the printed circuit board is a build-up substrate. 7: The method of claim 71, wherein the printed circuit board is a laminated substrate. The method of claim 69, wherein the slotting system runs through the spacer. 7 5. The method of claim 96, wherein the spacer has a smaller area than the second wafer. The method of claim 69, wherein the third wafer has an area size smaller than a slot of the spacer. 7 7. The method of claim 96, wherein the spacer is a printed circuit board. The method of claim 96, wherein the carrier surface of the wafer carrier has a plurality of wire pads (f i n g e r ). 7 9 . The method of claim 96, wherein the first wafer is not ]7567石夕品.ptd 第30頁 1246754 六、申請專利範圍 與該晶片承載件接置之相對表面上係設有複數個銲墊 (bonding pad)。 8 0 .如申請專利範圍第6 9項之製法,其中,該第二晶片未 與該第一晶片接置之表面上係設有複數個銲墊。 8 1 .如申請專利範圍第6 9項之製法,其中,該間隔板未與 該第二晶片接置之相對表面上係設有複數個銲線墊。 8 2 .如申請專利範圍第6 9項之製法,其中,該第三晶片未 與該第二晶片接置之表面上係設有複數個銲墊。7567石夕品.ptd Page 30 1246754 VI. Scope of Application A plurality of bonding pads are provided on the opposite surface of the wafer carrier. The method of claim 69, wherein a plurality of pads are provided on a surface of the second wafer that is not attached to the first wafer. The method of claim 69, wherein a plurality of wire bond pads are disposed on an opposite surface of the spacer that is not attached to the second wafer. The method of claim 69, wherein a plurality of pads are provided on the surface of the third wafer that is not attached to the second wafer. 17567石夕品.ptd 第31頁17567 Shi Xipin.ptd第31页
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