：7twf.doc/c 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種光罩及接觸窗開口的製造方 法，且特別是有關於-種具有高解析度的光罩及接觸窗開 口的製造方法。 【先前技術】 在半導體製程中，隨著電路積集化的要求越來越高， 整個電路元件大小的設計也被迫往尺寸不斷縮小的方向前 進。而在線寬越趨細微的情況下，對於微影製程解析度的 要求也就越來越高。然而，在製作積極度高的積體電路時， 在微影製程中常會出現如光學鄰近效應(pr〇ximity 等光學繞射效應的干擾，而使得解析度降低，產生光阻圖 案移轉不完全的問題。 曰 圖1A係繪示習知一種光罩的上視圖。圖1B係給示 利用圖1A之鮮進行微影製程後，所得之光阻層的:視 圖。 首先，請參照圖1A，提供光罩100，且此光罩1〇〇 上具有多數個格狀透光圖案1()2。一般說來，藉由此具有 格狀透光圖案102之光罩100來對圖2β所示之光阻層〃1〇4 進行，光，係會得到形成接近正圓（circular)的圖案而， 在線寬越趨細微的情況下，在藉由圖1A麻之光'罩⑽ 進仃微影製程後，所得到之光阻層1〇4上的圖案卻不再是 正圓，而呈現橢圓形(ellipse)圖案1〇6(如圖1β所示）。形 成上述橢1]形(ellipse)圖案⑽的主要原因是因為這些格 12459¾ 27twf.doc/c 狀透光圖案102其在X軸與γ軸上的間距差異越來越大， 而使得曝光源，特別是偏轴發#。ff_axis illuminatiQn)光 源，在通過此光罩100後，於χ軸與γ軸上會產生不一 致的繞射。錢，如此—來，將會降減續製程所製造出 之半導體元件的可靠度。 【發明内容】 本發明的目的就是在提供一種具有高解析度的光 罩，可形成圓形的圖案化光阻圖案，並在半導體製程中提 供更大的製程裕度(pr〇cess wind〇w)。 本發明的再一目的是提供一種接觸窗的形成方法， 可製造出形狀接近正圓的接觸窗。 本發明提出一種具有高解析度的光罩，包括一透光 基板、、-不透光板及多數個遮蔽物。其巾，不透光板係配 置在，光基板上，且不透光板係具有多數個條狀透光圖案 而暴露出部分透光基板，而且各條狀透光_係互相平行 且等間距配置。而多數個遮蔽物伽置於各條狀透光圖案 中之透光基板上，並且沿著各條狀透光㈣的延伸方向等 間距配置，而且各遮蔽物係未與不透光板接觸或重疊。 本發明提出一種接觸窗開口的形成方法，首先提供 一基底，再於基底上形成一光阻材料層。接著，利用一光 罩對光阻材料層進行—微難程，⑽成—㈣化之光阻 層。其中’光罩包括—透絲板、—不透光板及多數個遮 蔽物。而不透光㈣配置在透光基板上，且不透光板係具 有多數個錄透光_而絲出部分透光基板，而且各條 I2459^7twfdoc/c 狀透光圖案係互相平行且等間距配置。而 ==光圖案中之透光基板上，並且沿== 透光二2向等間距配置’而且各遮蔽物係未與不 身依照本發明的一較佳實施例所述之具有高解 ，罩或接觸窗開口的形成方法，其中各遮蔽物係配置ς垂 直延伸方向的方向上之各條狀透糾案的中央位置。 来罝=、ί?明的—較佳實施例所述之具有高解析度的 々、或接觸囱開口的形成方法，其中各遮蔽物的外形係對 稱於一座標平面之X軸及γ軸。 ，照本發明的_較佳實施例所述之具有高解析度的 ，罩或接觸窗開口的形成方法，其中錢蔽物的外形可以 疋圓形、四邊形、六邊形或八邊形。 一依照本發明的一較佳實施例所述之具有高解析度的 ，罩，接觸窗開σ的形成方法，其中光罩所_之曝光源 可以疋偏軸發光(〇ff-axis illumination)光源，其例如是 四孔(quadrupole)發光光源或二孔(dip〇le)發光光源。 、>依照本發明的一較佳實施例所述之具有高解析度的 光罩或接觸窗開口的形成方法，其中相鄰之各條狀透光圖 案之門係具有一弟一間距，而在延伸方向上，相鄰之各遮 蔽物之間係具有一第二間距，且各第二間距小於各 距。 本發明因採用在條狀透光圖案中配置有多數個遮蔽 物的光罩，可降低在進行曝光時，因X軸與Y軸上之繞 12459秘27一 射不 析度及製程:阻案所造成的影響，所以能提升解 方法中，係利用本發明所成接觸窗開口的 為讓Γϋ 吨料導以制可靠度。 顯易懂，下文χ特^^1和H也目的、特徵和優點能更明 說明如下。 貝知例，並配合所附圖式，作詳細 【實施方式】 鱗示本發明—録實施例之鮮的上視圖。 =>、，、Θ ，此光罩包括透光基板200、不透光板202及 巧個遮蔽物220’且其適用於微影製程中的曝光步:及 猎由此鮮可Μ在光阻上軸雜接近正目之圖案。 、一其中，不透光板202係配置在透光基板2〇〇上，且不 透光板202係具有多數個條狀透光圖案21〇而暴露出部分 的透光基板200。此外，各條狀透光圖案21〇係互相平行， 並以第一間距212等距配置。另外，透光基板2〇〇的材質 例如是玻璃；不透光板202的材質例如是鉻等不透光材 料。 另一方面，多數個遮蔽物22〇係配置於各條狀透光 圖案210中之透光基板200上，並且沿著各條狀透光圖案 210的延伸方向(X軸），並以第二間距222等間距配置。 值得一提的是，不同於習知之光罩設計（如圖1Α所 示），在本發明之光罩中，各遮蔽物220係未與不透光板 2〇2接觸或重疊。如此一來，將可以減少某一方向上之光 學繞射，從而減少X軸與Υ軸之繞射差異。舉例來說， 12459絡 7twf.d〇c/c 在本實施例巾，第二間距222係小於第—㈣212，即χ 軸上的間距小於γ軸上的間距，所以當以本發明所設計 之光罩進行曝光時，遮蔽物22G的配置方式將會破壞Υ 軸的繞射行為，而將原本的擴圓形(如目lB 為 正圓形（如圖4A所示）。氺就s _ # }". V 吓不J也就疋况，藉由各遮蔽物220未 與不透光板202接觸或重疊之配置方式，可以減少某一方 向之繞射，而達到圖形修正之效果。 / ’、 除此之外，為了使所曝出來之圖案具有對稱性，係 需對遮蔽物220之配置與外形作進—步限定。因此，在， 較佳實施例中’各遮蔽物22〇例如是配置於垂直各條狀透 光圖案210的方向(γ軸)上各條狀透光圖案21〇的中央位 置。此外’各遮蔽物220的外形會對稱於一座標平面之χ 轴及Y# ’其例如是圓形、四邊形、六邊形或八邊形。 在另一較佳實施例中，各條狀透光圖案21〇於垂直 各條狀透光圖案210的方向(Υ軸)上具有第一寬度214， 而各遮蔽物^20於垂直各條狀透光圖案21〇的方$(γ抽） 上具有第二寬度224，且各第二寬度224小於各第一寬度 214 〇 ’ 在又一較佳實施例中，本發明所提出之光罩會搭配 偏軸發光光源-起進行曝光製程，以提高解析度，從而確 4呆圖案正確轉移。其中，此偏軸發光光源例如是環形發光 光源、四孔發光光源或二孔發光光源。 Χ 由上述光罩的特點在於條狀透光圖案210配置遮蔽 ^ 220的佈局方式取代習知技術中格狀透光圖案，可以減 夕某方向之繞射現象，而修正成較佳的正圓圖案，如此 I2459^§27twfd〇c/c 可以提高微影製程中的解析度。另一方面，再配合偏軸發 光光源，將產生較佳的繞射效果，使光罩上的圖案能正石^ 地進行移轉。 以下，試舉另一實施例說明本發明所提出之光罩的 應用。 圖3A〜圖3(3係纟胃示本發明一較佳實施例接觸窗開口 的製造流程剖面圖。圖4A、圖4B係分別繪示圖3B及圖 3C之上視示思圖。凊參知、圖3A，首先提供一半導體基底 3〇〇。此半導體基底300上例如是已依序形成有導體層3〇2 與介電層304。其中導體層302的材質例如是金屬或是摻 雜多晶矽，形成的方法例如是化學氣相沉積法。此外，介 電層304的材質例如是氧化矽，其形成方法例如是化學氣 相沉積法。 ^ 接著，請繼續參照圖3Α，於基底300上形成光阻材 料層305。光阻材料層305的形成方法例如是以旋轉塗佈 法(Spin Coating)而形成之。 然後，請參照圖3B，係繪示延圖4A中剖面線a-A， 之剖面圖。首先，利用本發明所提出之光罩對光阻材料 層305進行一微影製程，以形成一圖案化光阻層3〇6。 其中，本發明所提出之光罩係具有如圖2所示之配置方 式，關於其詳細之說明已於上述之内容中揭露，於此不 再贅述。此外，由於在本發明之光罩中，各遮蔽物22〇 係未與不透光板202接觸或重疊，所以可以減少某一方 向上之光學繞射，從而減少X軸與Y轴之繞射差異，而 I2459^7twfdoc/c 形成具有多數個 4A所示）。 正圓圖案308之0案化光阻層 306(如圖 之後叫參恥圖3C，係綠示延圖4B中 之剖面圖。首先’以圖案化光阻層306為罩:泉 304進行-仙制， 兀丨禮竭為罩幕，對介電層 進仃儀刻製程’而於介電層3〇4 接著，移除圖案化光阻層3。6 使用了不同於習知設計 月 案光阻層306。所以，者以：且：此了以形成具有正圓圖 ^田以此具有正圓圖案之光阻層306: 7twf.doc / c IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a photomask and a contact window opening, and more particularly to a photomask with high resolution and contact Manufacturing method of window opening. [Previous Technology] In the semiconductor manufacturing process, as the requirements for circuit integration become higher and higher, the design of the entire circuit element size is also forced to advance in a direction of ever-decreasing size. As the line width becomes smaller, the requirements for the lithography process resolution become higher and higher. However, when making highly active integrated circuits, interferences such as optical proximity effects (prOximity, etc.) often occur in the lithography process, resulting in reduced resolution and incomplete photoresist pattern transfer. FIG. 1A is a top view of a conventional photomask. FIG. 1B is a view showing a photoresist layer obtained after the photolithography process using FIG. 1A. First, please refer to FIG. 1A, A reticle 100 is provided, and the reticle 100 has a plurality of lattice-shaped light-transmitting patterns 1 () 2. Generally, the reticle 100 having the lattice-shaped light-transmitting pattern 102 is shown in FIG. 2β. The photoresist layer (104) is performed, and the light will get a pattern that is close to a circular shape. When the line width becomes finer, the lithography is performed by using the mask of hemp light in FIG. 1A. After the manufacturing process, the pattern on the obtained photoresist layer 104 is no longer a perfect circle, but presents an ellipse pattern 106 (as shown in FIG. 1β). The ellipse pattern is formed as described above. The main reason for this is because these grids are 12459¾ 27twf.doc / c. The distance between the X-axis and the γ-axis is 102 Iso increasing, such that exposure light source, in particular off-axis hair # .ff_axis illuminatiQn) light source, after passing through the photomask is 100, and the γ-axis to be the axis χ diffracted inconsistent. Money, in this way-will reduce the reliability of semiconductor components manufactured by continued processes. [Summary of the Invention] The purpose of the present invention is to provide a photomask with high resolution, which can form a circular patterned photoresist pattern, and provide a greater process margin in the semiconductor manufacturing process. ). Another object of the present invention is to provide a method for forming a contact window, which can manufacture a contact window having a shape close to a perfect circle. The present invention provides a photomask with high resolution, which includes a light-transmitting substrate, an opaque plate, and a plurality of shielding objects. The opaque plate is arranged on a light substrate, and the opaque plate has a plurality of strip-shaped light-transmitting patterns to expose a part of the light-transmitting substrate, and the strip-shaped light-transmitting plates are parallel to each other and equally spaced. Configuration. Most of the shielding objects are placed on the light-transmitting substrates in the stripe-shaped light-transmitting patterns, and are arranged at equal intervals along the extending direction of the strip-shaped light-transmitting ridges. overlapping. The invention provides a method for forming a contact window opening. First, a substrate is provided, and then a photoresist material layer is formed on the substrate. Then, a photoresist layer is used to perform-micro-difficult process, to form-a photoresist layer. Among them, the photomask includes-a transparent plate,-an opaque plate, and a plurality of shields. Opaque ㈣ is arranged on a light-transmitting substrate, and the light-transmissive plate has a plurality of light-transmitting substrates, and the light-transmitting part of the light-transmitting substrate, and each of the I2459 ^ 7twfdoc / c-shaped light-transmitting patterns are parallel to each other and so on. Pitch configuration. And == on the light-transmitting substrate in the light pattern, and arranged at equal intervals along the == light-transmitting 2 ′ direction, and each shielding object does not have a high resolution as described in a preferred embodiment of the present invention, A method for forming a cover or a contact window opening, wherein each shielding object is arranged at a central position of each strip-shaped penetrating correction in a direction extending vertically.来 罝 = ， ί? 明 —The method of forming a high-resolution 々 or a contact opening of a chimney described in the preferred embodiment, wherein the shape of each shield is symmetrical to the X-axis and γ-axis of a standard plane. According to the preferred embodiment of the present invention, the method for forming a cover or contact window opening with high resolution, wherein the shape of the money shield can be round, quadrangular, hexagonal, or octagonal. A method for forming a cover and a contact window with high resolution according to a preferred embodiment of the present invention, wherein the exposure source of the photomask can be an off-axis illumination light source. It is, for example, a quadrupole light source or a dipole light source. , ≫ According to a method for forming a high-resolution photomask or a contact window opening according to a preferred embodiment of the present invention, adjacent gates of each strip-like light-transmitting pattern have a one-by-one pitch, and In the extending direction, there is a second distance between adjacent shields, and each second distance is smaller than each distance. Because the present invention adopts a mask in which a plurality of shielding objects are arranged in a strip-shaped light-transmitting pattern, it can reduce the resolution and process due to the winding around the 12459 secret and the X-axis and Y-axis during exposure. Therefore, in the method for improving the solution, the contact window opening formed by the present invention is used to guide the tons of material to make the reliability. Obviously, the purpose, characteristics, and advantages of χ ^^ 1 and H below can be explained more clearly as follows. Exemplary examples will be described in detail in conjunction with the accompanying drawings. [Embodiment] The top view of the embodiment of the present invention is shown in detail. = > ,,, Θ, this mask includes a transparent substrate 200, an opaque plate 202, and a mask 220 ', and it is suitable for the exposure step in the lithography process: Block the shaft miscellaneous pattern close to the eye. First, the opaque plate 202 is disposed on the light-transmitting substrate 200, and the light-opaque plate 202 is a light-transmitting substrate 200 that has a plurality of strip-shaped light-transmitting patterns 21 and exposes a portion. In addition, the strip-like light-transmitting patterns 21 are parallel to each other, and are arranged at equal intervals with a first pitch 212. The material of the light-transmitting substrate 200 is, for example, glass; the material of the light-opaque plate 202 is, for example, a light-opaque material such as chromium. On the other hand, the plurality of shields 22 are arranged on the light-transmitting substrate 200 in each of the stripe-shaped light-transmitting patterns 210, and extend along the extension direction (X-axis) of each of the stripe-shaped light-transmitting patterns 210. The pitch 222 is arranged at equal intervals. It is worth mentioning that, unlike the conventional mask design (as shown in FIG. 1A), in the mask of the present invention, each of the shields 220 is not in contact with or overlaps the opaque plate 202. In this way, the optical diffraction in a certain direction can be reduced, thereby reducing the diffraction difference between the X-axis and the Z-axis. For example, 12459 and 7twf.d0c / c in this embodiment, the second distance 222 is smaller than the first ㈣212, that is, the distance on the χ-axis is smaller than the distance on the γ-axis, so when designing with the present invention, When the mask is exposed, the configuration of the shield 22G will destroy the diffraction behavior of the Υ axis, and the original expanded circle (such as mesh 1B is a perfect circle (as shown in Figure 4A). 氺 s _ # } ". V ca n’t be scared. By arranging the shields 220 not in contact with or overlapping the opaque plate 202, the diffraction in a certain direction can be reduced to achieve the effect of graphic correction. In addition, in order to make the exposed pattern have symmetry, it is necessary to further define the configuration and shape of the shield 220. Therefore, in the preferred embodiment, 'each shield 22' for example It is arranged at the center position of each stripe light transmission pattern 21 in the direction (γ axis) perpendicular to each stripe light transmission pattern 210. In addition, the shape of each shield 220 is symmetrical to the χ axis and Y # of a standard plane 'It is, for example, circular, quadrangular, hexagonal, or octagonal. In another preferred embodiment, each bar The light-transmitting pattern 21 has a first width 214 in the direction (Z axis) perpendicular to each of the strip-shaped light-transmitting patterns 210, and each shield ^ 20 is squared with each of the strip-shaped light-transmitting patterns 21 ( ) Has a second width 224, and each of the second widths 224 is smaller than each of the first widths 214. In another preferred embodiment, the photomask provided by the present invention is used with an off-axis light source to perform an exposure process. In order to improve the resolution, it is ensured that the four patterns are correctly transferred. Among them, the off-axis light source is, for example, a ring light source, a four-hole light source, or a two-hole light source. The layout of shielding ^ 220 is used to replace the grid-like light transmission pattern in the conventional technology, which can reduce the diffraction phenomenon in a certain direction and modify it to a better perfect circle pattern. In this way, I2459 ^ §27twfdoc / c can improve the micro The resolution in the film production process. On the other hand, combined with the off-axis light source, it will produce a better diffraction effect, so that the pattern on the photomask can be transferred squarely. Below, let ’s try another embodiment. Explain the application of the photomask provided by the present invention FIGS. 3A to 3 (Section 3 shows a cross-sectional view of the manufacturing process of a contact window opening according to a preferred embodiment of the present invention. FIGS. 4A and 4B show the top views of FIGS. 3B and 3C, respectively. 3A, a semiconductor substrate 300 is provided first. For example, a conductive layer 300 and a dielectric layer 304 are sequentially formed on the semiconductor substrate 300. The material of the conductive layer 302 is, for example, metal or doped. The method for forming polycrystalline silicon is, for example, chemical vapor deposition. In addition, the material of the dielectric layer 304 is, for example, silicon oxide, and the method for forming it is, for example, chemical vapor deposition. ^ Next, please continue to refer to FIG. 3A on the substrate 300. A photoresist material layer 305 is formed. The method of forming the photoresist material layer 305 is, for example, a spin coating method. Then, please refer to FIG. 3B, which is a cross-sectional view extending along the section line a-A in FIG. 4A. First, a photolithography process is performed on the photoresist material layer 305 by using the photomask provided by the present invention to form a patterned photoresist layer 306. Among them, the photomask provided by the present invention has a configuration mode as shown in FIG. 2, and a detailed description thereof has been disclosed in the above content, and will not be repeated here. In addition, in the photomask of the present invention, each of the shields 22 is not in contact with or overlaps the opaque plate 202, so the optical diffraction in a certain direction can be reduced, thereby reducing the difference between the X-axis and Y-axis diffraction. , While I2459 ^ 7twfdoc / c is formed with a majority of 4A). The 0-patterned photoresist layer 306 of the perfect circle pattern 308 (referred to as FIG. 3C hereinafter, is a cross-sectional view shown in green in FIG. 4B. First, use the patterned photoresist layer 306 as a cover: spring 304-fairy It is a mask, and the dielectric layer is engraved into the dielectric layer. Then, the dielectric layer 304 is removed, and the patterned photoresist layer 3. 6 is removed. The resist layer 306. Therefore, the following: and: to form a photoresist layer 306 having a perfect circle pattern and a perfect circle pattern
的盆上於介電層304中所形成的接觸窗開口 310 八上視圖案也會為正圓圖案(如圖4B所示）。 作彡㈣㈣^ 31G為例來 ’惟非IX限定本發明。在另—較佳實施例中，可 1稭，整弟—間距212、第二間距222第-寬度214、 ίΐ寬度224或是遮蔽物22G的外形來調整縣形成的接 觸窗開口之圖案。The contact window opening 310 formed in the dielectric layer 304 on the basin is also a perfect circle pattern (as shown in FIG. 4B). As an example, 31G is used as an example, but the present invention is not limited by IX. In another preferred embodiment, the shape of the contact window openings formed by the county can be adjusted by the shape of the contact opening 212, the second interval 222, the second width 214, the width 224, or the cover 22G.
、他後、買九成半導體元件的後續製程，例如金屬内 連線‘程為4習此技術領域者所周知，於此不再贅述。 ‘上所述’在本發明至少具有下列優點： 夕ι本發明所採用光罩結構係在條狀透光圖案中配置有 多數個遮蔽物，可降低某一方向上之繞射，從而提高解析 度及製程裕度。 2·本發明所提出之光罩結構會搭配偏轴發光光源一起 進行曝光製程，所以可提高圖案轉移的精確度。 3·在本發明形成接觸窗開口的方法中，可得到外形接 11 I2459^§27twfdoc/c 近正窗開口，從而提升半導體元件的可靠度。 ;發明已以較佳實施例揭露如 = 明r何熟習此技藝者，在不脫離本 護範圍當者=本發明之保 【圖式簡單說明】 马早 圖1A係緣示習知—種光罩的上視圖。 =係繪示習知一種圖案化光阻層的上視圖。 口 ^糸繪示本發明—較佳實施例之光罩的上視圖。 的製鱗示本發明—難實關接觸窗開口 s A係1示圖3A中圖案化光阻層之上視圖 圖4B係繪示圖犯中介電層之上㈣。 【主要元件符號說明】 100 :光罩 102 格狀透光圖案 104 光阻 106 橢圓形圖案 200 透光基板 202 不透光板 210 條狀透光圖案 212 第一間距 214 第一寬度 220 遮蔽物 12 I2459^§27twfdoc/cLater, the subsequent process of buying 90% of the semiconductor components, such as metal interconnects, is well known to those skilled in the art, and will not be repeated here. The above description has at least the following advantages in the present invention: The mask structure used in the present invention is configured with a plurality of shields in a strip-shaped light-transmitting pattern, which can reduce diffraction in a certain direction, thereby improving resolution. And process margin. 2. The mask structure proposed by the present invention will be subjected to an exposure process together with an off-axis light source, so the accuracy of pattern transfer can be improved. 3. In the method for forming a contact window opening according to the present invention, an external connection 11 I2459 ^ §27twfdoc / c can be obtained, thereby improving the reliability of the semiconductor device. The invention has been disclosed in a preferred embodiment, such as = Ming r, who is familiar with this skill, who does not depart from the scope of this protection = the guarantee of the present invention [Schematic explanation] Ma Zao Figure 1A Associated Demonstration-Kind of Light Top view of the hood. = Is a top view of a conventional patterned photoresist layer. A top view of the photomask of the present invention-the preferred embodiment is shown. The scale making method of the present invention shows that it is difficult to close the opening of the contact window. S A is a top view of the patterned photoresist layer in FIG. 3A, and FIG. 4B is a top view of the dielectric layer. [Description of main component symbols] 100: Photomask 102 Lattice transparent pattern 104 Photoresist 106 Elliptical pattern 200 Transparent substrate 202 Opaque plate 210 Strip-like transparent pattern 212 First pitch 214 First width 220 Shelter 12 I2459 ^ §27twfdoc / c
222 第二間距 224 第二寬度 300 半導體基底 302 導體層 304 介電層 305 光阻材料層 306 圖案化光阻層 308 正圓圖案 310 接觸窗開口222 second pitch 224 second width 300 semiconductor substrate 302 conductive layer 304 dielectric layer 305 photoresist material layer 306 patterned photoresist layer 308 perfect circle pattern 310 contact window opening
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