TWI521369B - Layout decomposition method and method for manufacturing semiconductor device applying the same - Google Patents

Description

Layout segmentation method and semiconductor component manufacturing method using same

The present invention relates to a layout segmentation method and a semiconductor device manufacturing method using the same, and more particularly to a layout segmentation method including identifying regions having odd and even features, and applying the layout segmentation method to double exposure A method of fabricating a semiconductor device in which an odd feature and an even feature are formed.

As the size of the electronic device continues to shrink, the features such as the integrated circuit on the electronic device become smaller and smaller. The fine pitch of the features and their graphics must meet the requirements of small-sized electronic devices. However, the ever-decreasing spacing of features and their graphics increases the difficulty of component fabrication. Therefore, the size of the feature is also limited by the limitations of the conventional process technology. To achieve a very small minimum pitch by using the current yellow light process technology, the feature may not be stably formed. In general, the desire to add smaller sized features to a substrate is limited by the wavelength of the light used to expose the yellow light process and whether the optical system accurately projects the image of the associated pattern. Generally, when the k1 value (the dimensionless coefficient of the process-related parameters) is lower than 0.35, the yellow light process yield gradually decreases and the cost also gradually increases. When a single exposure of k1 values below 0.28 is not feasible, double exposure is typically used to form finer features and larger features in an applied semiconductor component.

Furthermore, other techniques such as the pitch doubling technique have also been proposed to extend the ability of the yellow light process to minimize the minimum pitch that can be achieved by the yellow light process, thus enabling semiconductor components such as The number of features formed in a region of the substrate is doubled. However, the number of features formed according to the multiplication technique is an even number, so there is a problem in the process for areas requiring odd features.

The present disclosure relates to a layout dividing method and a semiconductor device manufacturing method using the same. The layout segmentation method of the present disclosure includes the steps of identifying regions having odd features and even features. Applying this layout division method can easily and smoothly transfer patterns of odd features and even features to semiconductor elements.

According to the disclosure, a layout decomposition method is proposed, which is processed by a logic processer of an electronic computing system, the method comprising: receiving a design layout by a logical processor The logic processor determines a design rule to divide the layout, including: identifying a plurality of loose areas on a substrate and a plurality of dense areas; and identifying odd features on the substrate First areas with odd-numbered features and second areas with even-numbered features; and according to certain design rules, the electronic computing system is correspondingly generated A first mask having a first pattern and a second mask having a second pattern.

According to an embodiment of the present disclosure, a method of fabricating a semiconductor device includes performing a layout division by a logic processor of an electronic computing system, the manufacturing method comprising: receiving and analyzing a design layout by a logic processor; The processor identifies a plurality of discrete regions and a plurality of dense regions on a substrate according to the analysis result of the design layout, and identifies a plurality of first regions having an odd number of features on the substrate and a plurality of even features a second region; performing a first exposure on a temporary layer on the substrate by a first mask, the first mask having a first pattern substantially corresponding to the dense regions of the substrate; developing the Temporary layer to form a plurality of placeholders on the substrate; covering a spacer material on the positioning bodies of the substrate, and patterning the spacer material to form a plurality of spacers at least at a dense region of the substrate Removing the locating bodies to form an even number of features at least at a second region of the dense region of the substrate; and spacing the dispersion regions on the substrate by a second reticle a second exposure of the spacer and the spacer of the dense region, the second mask having a second pattern corresponding to at least the dispersion region of the substrate; and the development spacer material to form at least a plurality of features of the dispersion region, wherein the dense region is The odd features at one zone may be formed after the first exposure development or after the second exposure development.

In order to better understand the above and other aspects of the present invention, the following The specific embodiments, together with the drawings, are described in detail as follows:

The present disclosure proposes a layout decomposition method which can be applied to a manufacturing method of a semiconductor device using double exposure, so that even-numbered features and odd-numbered features in a semiconductor element can be successfully used as a transfer pattern. For example, a pitch doubling technique is formed on the element; for example, formed on a substrate or a deposited layer of the substrate. The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. The same or similar reference numerals are used to designate the same or similar parts. It is to be noted that the drawings have been simplified to clearly illustrate the contents of the embodiments, and the dimensional ratios in the drawings are not drawn to the scale of the actual products, and thus are not intended to limit the scope of the present invention.

FIG. 1 is a general flow chart of a layout dividing method according to an embodiment of the present invention. The layout dividing method of the embodiment is processed, for example, by a logic processer of an electronic computing system. First, as shown in step S101, the logical processor receives a design layout. Then, as shown in step S102, the logical processor confirms a design rule of the layout division. In this embodiment, the design rule for confirming the layout division includes: identifying dense areas of the features on the substrate, that is, dense areas, and areas where the features are loosely distributed, that is, dispersed. Loose areas; regions with odd and even features are also identified. After that, as shown in step S103, according to the design rule of identification, electronic operation The system accordingly produces a first reticle having a first pattern and a second reticle having a second pattern.

In applying this embodiment, the dense regions are, for example, the array regions of the components, which typically have densely distributed wires and electronic components such as transistors and capacitors. Whereas the dispersion zone is, for example, a peripheral region, the peripheral region typically has larger or loosely distributed components than the array region. However, the "intensive" and "scattered" areas, or the "larger" ("wider") and "smaller" ("narrower") features are determined by the process of forming a pattern depending on the actual application. It depends on the situation and is not particularly limited to a specific area. Furthermore, in applying the embodiment, a double exposure method using a second mask after using the first mask can be employed to produce features that are narrower and wider on the element, as well as odd and even features.

In this embodiment, after confirming the design rule of the layout division as shown in step S102, the minimum pitch of the feature and the relevant regions having the odd feature and the even feature have been identified. In general, the first pattern of the first mask includes a pattern of minimum spacing. In applying the embodiments of the present disclosure, there are several embodiments of the layout method of the layout method that can be used to fabricate semiconductor components having even features and odd features. The following is a description.

2A-2D is a partial schematic view showing a method of manufacturing an even number of features in an element according to an embodiment of the present invention. In this embodiment, one of the first masks (not shown) produced by the layout dividing method of the embodiment has a first pattern including a plurality of fine-striped regions corresponding to the substrate 20 Intensive area. According to the layout division method of the embodiment, one of the second masks has a second pattern corresponding to the base. The discrete regions at the plate 20, and the cutting regions/shielding regions of the corresponding dense regions. As shown in FIG. 2A, a plurality of placeholders 21 are defined on the substrate 20 after exposure and development by the first mask. As shown in FIG. 2B, a spacer material 22 is deposited on the substrate 20 and covers the positioning body 21. Thereafter, the spacer material 22 is etched, for example, to form a spacer 22' on both sides of the positioning body 21, as shown in FIG. 2C; wherein the top surface of the spacer material 22 is horizontally etched downward to expose the positioning body 21 surface. Next, as shown in Fig. 2D, the positioning body 21 is removed while leaving the spacers 22' on both sides thereof on the substrate 20. Therefore, the number of spacers 22' is twice the number of the positioning bodies 21. Thereafter, the spacers 22' can serve as a mask to transfer the pattern of spacers 22' to the substrate 20 (not shown). As shown in Fig. 2D, an even number of features (spacers 22') are formed at dense regions of the substrate 20.

3A-3D is a partial view showing a manufacturing method of an odd-numbered feature in a dense region in an element according to an embodiment of the present invention. In this embodiment, the first mask (not shown) produced by the layout dividing method of the embodiment has a first pattern corresponding to a dense area at the substrate 30, and the first pattern includes, for example, a plurality of narrow strips. A region and a plurality of wide-striped regions. The second mask produced by the layout dividing method according to this embodiment has a second pattern substantially corresponding to the dispersed area at the substrate 30, and the second pattern may also include clipping of the corresponding dense area according to design requirements. Area/shadow area. In this embodiment, the narrow strip-shaped region of the first mask is, for example, corresponding to a dense region (Aodd) having an odd number of features, and defines a plurality of narrow positioning after exposure and development by the first mask. A fine placeholder 31a is on the substrate 30. Furthermore, one of the wide strip regions in the first pattern is adjacent to one of the narrow strip regions of the corresponding dense region (Aodd) to define at least one wide placeholder 31b adjacent to the substrate 30. It is provided on one side of the narrow positioning body 31a as shown in Fig. 3A.

Thereafter, similarly, a spacer material 32 is deposited on the substrate 30 and covers the narrow positioning body 31a and the wide positioning body 31b as shown in FIG. 2B. For example, the non-isotropic etching spacer material 32 forms spacers 32' on both sides of the narrow positioning body 31a and the wide positioning body 31b, as shown in FIG. 3C; wherein the top surface of the spacer material 32 can be horizontally etched downward The surface of the positioning bodies 31a and 31b is exposed. The spacers 32' on both sides of the wide positioning body 31b in Fig. 3C are, for example, but not limited to, belong to different regions, for example, two dense regions (Aodd) which are different from the odd-numbered features. Next, as shown in Fig. 3D, the narrow positioning body 31a and the wide positioning body 31b are removed while leaving the spacers 32' on both sides thereof on the substrate 30. Accordingly, an odd number of spacers 32' are formed in a dense region having an odd number of features (Aodd); and a spacer 32' (such as the left side of the 3D drawing) outside the dense region having odd features can be combined with other regions. The spacers are combined to form odd or even spacers in the region, or as dummy spacers, the application of which depends on design conditions, and the invention is not limited thereto. Thereafter, the spacers 32' can serve as a mask to transfer the pattern of spacers 32' to the substrate 30 (not shown). Since the odd spacers 32' can be formed by the above process, an odd number of features at the dense regions can be smoothly formed at the dense regions of the substrate 30.

4A-4D is a partial illustration of another embodiment in accordance with an embodiment of the present invention A schematic diagram of a manufacturing method in which a dense region in an element has an odd number of features. In FIGS. 4A-4D, the formation of the positioning body 41, the spacer material 42 and the spacer 42' on the substrate 40 is similar to the step of forming the positioning body 21, the spacer material 22 and the spacer 22' as described in the above 2A-2D. Referring to the foregoing, no further details are provided herein. In this embodiment, a first photomask (not shown) generated by the layout segmentation method of the embodiment has a first pattern, and includes a plurality of fine-striped regions corresponding to the dense regions; And the second mask produced has a second pattern including a plurality of correction regions corresponding to the dense regions and a plurality of normal regions corresponding to the dispersion regions. In an embodiment, the correction region of the second pattern includes, for example, a plurality of opaque regions and a plurality of transmissive regions to be partially shielded and disconnected from the substrate 40, respectively. Spacers 42'. As shown in FIG. 4A, the narrow strip-shaped region on the first mask defines a plurality of locating bodies 41 on the substrate 40, and a portion of the locating bodies 41 correspond to dense regions having odd features (Aodd). ). As shown in Figs. 4C and 4D, an even number of spacers 42' are formed on the substrate 40. In the subsequent pattern transfer process, the opaque regions of the second mask, such as 521, can be used to mask an odd number of spacers 42' (indicated by masking three spacers 42' in the figure), leaving an odd number of spacers 42. Pattern transfer (as indicated by leaving five spacers 42' in the figure) as a mask. Therefore, odd patterns can be smoothly formed in the dense area (Aodd) after the pattern transfer. Referring to FIG. 5 at the same time, a second reticle 52 having an opaque region 521 for applying the pattern transfer spacer 42' to the substrate 40 is illustrated.

FIG. 6A is a schematic view showing another second reticle, which can be applied to the rear The process of shifting the spacer pattern in the 4D drawing is continued. In Fig. 6, in addition to the opaque region 531, the second mask 53 further includes a pattern of features that can be cut/disconnected by the spacers 42', such as at least one of the light-transmissive regions 532. The arrangement of the opaque regions and/or the light transmissive regions depends on the layout design of the actual application, and the illustrations are for illustrative purposes only and not for limitation. Figure 6B is a top view of a patterned substrate 60 after spacer pattern transfer.

According to the above embodiment, after confirming the design rule of the layout division, the pattern (first pattern) of the first mask produced corresponds to a dense area of the substrate, and the second mask produced by the pattern (second pattern) Corresponding to the discrete area of the substrate and/or the cropped area/masked area of the corresponding dense area. The first mask is first applied to fabricate a spacer pattern having a fine pitch (e.g., corresponding minimum spacing) at a dense region of the substrate; then, applying a second mask to create a pattern of the dispersion region, and, as required by design rules, masking Partial spacers in (and/or cropped) dense regions form odd and even features at corresponding regions identified in the design rules.

However, the disclosure does not stop at the above application, and the process of pattern transfer can be modified and changed according to practical applications. For example, in another embodiment, one of the first masks produced by the layout method according to the embodiment has a first pattern including, for example, a plurality of narrow strip regions, for example, corresponding to dense regions. One of the minimum spacings, further, the first pattern on the first reticle corresponds to the entirety of the substrate. According to the layout division method of the embodiment, the second mask has a second pattern, for example, a clipping area/shadow area corresponding to the dispersion area and the corresponding dense area. For example, the second pattern of the second mask includes a plurality of first correction regions corresponding to the dense region and a plurality of second correction regions. Corresponds to the dispersion area. First, the first mask is applied to form a spacer having fine pitch (such as the minimum spacing required for the dense region) on the substrate, and then the second mask is applied to remove the excess spacers densely distributed in the dispersion region. And the pattern of the second mask can also be achieved, as required by the design rules, to mask (and/or crop) portions of the spacers in the dense regions to form odd features and even numbers at corresponding regions identified in the design rules. Features. For example, the first correction region of the second reticle includes a plurality of first opaque regions and/or a plurality of first transmissive regions to partially shield and respectively / or disconnect the spacers in the dense area. The second correction region of the second mask includes, for example, a plurality of second opaque regions, a plurality of second transmissive regions, or a combination of the two to shield and/or move Except for undesired spacers in the dispersion area on the substrate.

In the above embodiment, the positioning bodies 21, 31a, 31b, and 41 may be single or multiple layers of a hard mask layer, and the material thereof includes, for example, tantalum nitride, tantalum oxide, polycrystalline germanium, an organic material such as amorphous. A carbon material, a polymer material, a spin-on dielectric material such as an organic anti-reflective coating (ARC), a dielectric anti-reflective coating (DARC), such as a polysilicon Silicon-rich silicon oxynitride, or an inorganic material. In practical applications, the selection of the material of the positioning bodies 21, 31a, 31b, 41 and the spacing materials 22, 32, 42 can be selected according to the relevant chemical conditions and steps in the various patterning and transfer processes. Adjustment. In the embodiment, the materials of the positioning bodies 21, 31a, 31b, 41 are The etching is selectively etched with respect to the subsequently deposited spacer material 22, 32, 42. In addition, the thickness of the positioning bodies 21, 31a, 31b, 41 and the spacer materials 22, 32, 42 and the spacers 22', 32', 42' may also depend on whether they are compatible with the relevant chemical conditions and steps in the application process. This disclosure does not limit this. In addition, although the embodiment is illustrated by the patterning process of the substrate, the disclosure is not limited to the transfer pattern on the substrate; in practical applications, other film layers may be formed on the substrate, if The film layer is made of a suitable material and associated with the relevant chemical conditions and process steps, and the patterned pattern can also be transferred to the film layers.

According to the layout segmentation method disclosed in the above embodiments, a mask having a special pattern can be generated, so that even features and odd features can be formed on the component simply and smoothly without additional or complicated process steps; for example; It is formed on a substrate or a deposited layer of a substrate. Furthermore, the semiconductor element is manufactured by applying the layout division method of the embodiment, and the manufacturing method thereof can be compatible with the existing process architecture, so that it is very suitable for mass production and has market competitiveness.

In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

20, 30, 40‧‧‧ substrates

21, 31a, 31b, 41‧‧ ‧ positioning body

22, 32, 42‧‧‧ spacer materials

22', 32', 42' ‧ ‧ spacers

52, 53‧‧‧second mask

521, 531‧‧‧ opaque areas

532‧‧‧Lighting area

60‧‧‧ patterned substrate

Aodd‧‧‧ dense area with odd features

S101-S103‧‧‧Steps

FIG. 1 is a general flow chart of a layout dividing method according to an embodiment of the present invention.

2A-2D is a partial schematic view showing a method of manufacturing an even number of features in an element according to an embodiment of the present invention.

3A-3D is a partial view showing a manufacturing method of an odd-numbered feature in a dense region in an element according to an embodiment of the present invention.

4A-4D is a partial view showing a manufacturing method of an odd-numbered feature in a dense region in another component according to an embodiment of the present invention.

FIG. 5 is a schematic view of a second photomask, which can be applied to the process of pattern transfer spacer to substrate.

FIG. 6A is a schematic view showing another second reticle, which can be applied to the process of subsequently transferring the spacer pattern in the 4D figure.

Figure 6B is a top view of a patterned substrate after spacer pattern transfer.

Claims (20)

A layout decomposition method is processed by a logic processer of an electronic computing system, the method comprising: the logic processor receiving a design layout; the logical processor Determining a design rule to divide the layout includes: identifying a plurality of loose areas on a substrate and a plurality of dense areas; and identifying a plurality of odd features on the substrate First areas with odd-numbered features and second areas with even-numbered features; and according to the determined design rule, the electronic computing system is correspondingly generated a first mask and a second mask having a second pattern, the first mask and the second mask being used to form an odd number in the first regions of the dense regions Features. The layout segmentation method of claim 1, wherein the first pattern of the first mask corresponds to the dense regions. The layout dividing method according to claim 2, wherein the first mask comprises a plurality of fine-striped regions and a plurality of wide-striped regions to constitute the first A pattern defines a plurality of placeholders on the substrate. The method for dividing a layout according to claim 3, wherein one of the plurality of strip-shaped regions in the first pattern of the first mask is adjacent One of the narrow strip regions corresponding to the dense regions is defined to define at least one wide placeholder on the substrate adjacent to one of a plurality of fine placeholders. The layout dividing method according to claim 3, wherein the second pattern of the second mask substantially corresponds to the dispersed regions. The layout segmentation method of claim 1, wherein the first pattern of the first mask comprises a plurality of fine-striped regions corresponding to the dense regions. The layout segmentation method of claim 6, wherein the second pattern of the second mask comprises a plurality of correction regions corresponding to the dense regions and a plurality of normal regions. In these scattered areas. The layout dividing method according to claim 7, wherein the correction regions of the second mask comprise a plurality of opaque regions and a plurality of transmissive regions, respectively A plurality of spacers formed on the substrate are shielded and broken. The layout dividing method of claim 1, wherein the first pattern of the first mask corresponds to the entirety of the substrate, and the first pattern comprises a plurality of narrow strip regions corresponding to the dense portions. One of the minimum pitches of the zone. The layout division method of claim 9, wherein the second pattern of the second mask comprises a plurality of first correction regions corresponding to the dense regions and a plurality of second correction regions. Second correction regions correspond to the dispersed regions. The layout division method of claim 10, wherein the first correction regions of the second reticle comprise a plurality of first opaque regions and a plurality of first opaque regions ( First transmissive regions) to partially block and break a plurality of spacers formed in the dense regions of the substrate, respectively. The layout division method of claim 10, wherein the second correction regions of the second reticle comprise a plurality of second opaque regions and a plurality of second opaque regions ( Second transmissive regions) or a combination of the two to mask or remove the undesired spacers in the discrete regions of the substrate. A method of fabricating a semiconductor device, comprising: performing a layout split by a logic processor of an electronic computing system, the manufacturing method comprising: the logic processor receiving and analyzing a design layout; the logic processor according to the The analysis result of the design layout identifies a plurality of loose areas and a plurality of dense areas on a substrate, and identifies a plurality of odd-numbered features on the substrate. a first region and a plurality of second regions having even-numbered features; first exposing a temporary layer on the substrate by a first mask, the first mask Having a first pattern substantially corresponding to the dense regions of the substrate; developing the temporary layer to form a plurality of placeholders on the substrate; Covering a spacer material on the locating bodies of the substrate, and patterning the spacer material to form a plurality of spacers at at least the dense regions of the substrate; removing the locating bodies to at least Forming the even-numbered features at the second regions of the dense regions of the substrate; the spacer material of the discrete regions on the substrate and the spacers of the dense regions by a second mask Performing a second exposure, the second mask having a second pattern corresponding to at least the dispersion regions of the substrate; and developing the spacer material to form at least a plurality of features of the dispersion regions, wherein the plurality of features are dense The odd features at the first zones of the zone are formed after the first exposure development or after the second exposure development. The manufacturing method of claim 13, wherein the first photomask comprises a plurality of fine-striped regions and a plurality of wide-striped regions to constitute the first a pattern, and after performing the first exposure development and removing the positioning bodies by using the first mask, the odd-numbered features at the first regions and the even-numbered features at the second regions They are simultaneously formed in the dense regions of the substrate. The manufacturing method of claim 13, wherein the first mask comprises a plurality of narrow strip regions substantially corresponding to the dense regions of the substrate, and the temporary layer is exposed by using the first mask After development, the spacers are formed substantially in the dense regions. The manufacturing method of claim 15, wherein the second reticle includes a plurality of correction regions corresponding to the dense regions and a plurality of normal regions corresponding to The plurality of discrete regions, and the correction regions include a plurality of opaque regions and a plurality of transmissive regions to respectively correspond to a plurality of cutting regions and shadows of the dense regions The shielding regions, after exposing and developing the spacer material and the spacers by using the second mask, forming the odd features of the first regions and the features of the dispersion regions . The manufacturing method of claim 13, wherein the first pattern of the first mask corresponds to the entirety of the substrate, and the first pattern comprises a plurality of narrow strip regions corresponding to the dense regions. And after performing the first exposure development and removing the positioning bodies by using the first mask, at least the even features are formed at the second regions of the dense regions. The manufacturing method of claim 17, wherein the second pattern of the second mask comprises a plurality of first correction regions corresponding to the dense regions and the plurality of second correction regions ( Corresponding to the plurality of dispersion regions, after the spacers and the spacer material are exposed and developed by the second mask, the odd-numbered features of the first regions and the dispersed regions are formed These features. The manufacturing method of claim 18, wherein the first correction regions of the second reticle comprise a plurality of first opaque regions and a plurality of first opaque regions (first Transmissive regions) to partially shield and break the spacers formed in the dense regions of the substrate, respectively. The manufacturing method of claim 19, wherein the second correction regions of the second reticle comprise a plurality of second opaque regions and a plurality of second opaque regions (second Transmissive regions, or a combination of the two, to mask or remove excess portions of the spacer material in the discrete regions of the substrate to form the features of the discrete regions.