TWI244678B - Correcting the polygon feature pattern with an optical proximity correction method - Google Patents

Abstract

The present invention is provided a method to use a pattern section without extra serif to correct the polygon feature pattern with at least one inner corner. Such that the polygon feature pattern with at least one inner corner can achieve effectively OPC (optical proximity correction) without adding any extra data point. Therefore, the present invention can instead of the conventional serif and achieves the effective OPC. In addition, the mask writing time is also improved since the original feature pattern is divided into a few rectangular-shaped mask writing units or trapeze-shaped mask writing units for regular mask writing, and the inner corner is/are not in the middle of each divided mask writing units. The mask inspection is also simplified and easier to calibration since a simple geometry other than complex serif is used.

Description

1244678

5-1 Field of Invention: The present invention relates to a method for optically correcting a mask pattern, and more particularly to a method for correcting an optical proximity effect of a polygonal mask pattern having an internal angle (c 0 r n e Γ). 5-2 Background of the Invention:

Miniaturized integrated circuits (ICs) have been characterized for many years. With the reduction in size of HI, different jelly bars are available.

Add difficulties. Among them, one hit *, the production process of the circuit of the product J

Phtollography). Limited to the step of optical lithography (the important component of optical lithography is ^ pattern features designed according to integrated circuits; this mask contains a patterned glass plate and covers a pattern 辕) ^ Some masks generally contain A through chromium). Evening bright block materials such as chromium (Cr, for high-end wafers, Tu An #, the size will increase rapidly. For example, the complexity of the sigh leaf and the file of the mask file (Gi ga By tes) file visits, | For a 彳 § case size of 50 gigabits, it takes two days to write the mask

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Days ^ between. Therefore, how to reduce the file size is an important issue. In the past, the first optical proximity effect correction (o pC, opticai pr0ximity cro r e c t i 〇η) Rina system uses an additional decorative line (e χ seven r a s e Γ f) to correct the internal angle figure. For a single inner corner, the number of data points may increase from one to five. In summary, the use of additional trimming f will increase the output file size and quickly increase the mask writing time, which is sufficient because trimming lines usually require sub-resolution points. Therefore, the size of the data points to be written increases and the writing speed becomes slower.

In Figures A to C, the traditionally modified L-shaped, T-shaped, and crossed-shaped photomasks are modified using external trim lines (e = tra Serif). Optical proximity effect correction method for feature patterns and the use of additional data points (e X tradata ρ int) and mask writing unit to define these optical proximity effect corrections

Positive special pattern. Figures A through C show the mask patterns corresponding to the integrated circuit pattern. Fig. -A shows and shows-the unshaped [shaped mask feature pattern 10]. In order to avoid the internal angle of the L-shaped mask characteristic pattern, the uncorrected L-shaped mask characteristic pattern 10 is modified by using a serif to form a modified mask characteristic pattern 10a, and the modified L-shaped mask pattern is modified. There is a single inner corner 14 as shown in the figure -B. Therefore, the number of additional data points and file capacity will increase after the correction. In the uncorrected L-shaped mask characteristic pattern, there is only one piece of data ... 'accounting for 1 2 A. However, the modified characteristic pattern 1 〇a formed after the correction has a total of four additional material points 12β, 12c, 12D and 12E. So in electricity

1244678 V. Description of the invention (3) The capacity of brain data processing and file capacity will increase as the number of data points increases. Referring to the first figure C, the modified L-shaped mask feature pattern is divided into five rectangular feature patterns 16a to 16e such that after the mask division step, two additional mask writing units are generated. Next, the second A figure shows the T-shaped mask characteristic pattern 20 with two data points 2 2 A and 2 2 B uncorrected. The correction steps are the same as those in the first a to the first c. The modified τ-shaped (τ — s daggered) mask feature pattern 20a formed after the warp trimming has two internal angles 24A and 24B, as in the second · As shown in β. In the second figure C, it is shown that eight additional data points 2 2 C to 2 2 J are generated after the correction, and after the mask is divided, seven additional mask units 26a to 26h are generated. Next, referring to the third A figure, this figure shows an uncorrected crossed-shaped mask feature pattern 30 having four data points 3 2 A to 3 2 D. As described above, after the optical proximity effect correction by the trimming method, the corrected staggered mask characteristic pattern 30a has four inner corners 34a to 34d and generates sixteen additional data points 32E to 32T. Therefore, the increase in the output file capacity and the mask writing time are due to the need to add new data points to the trim line. Next, the fourth figure is a contour image of the uncorrected interlaced mask feature pattern 3 0. The area enclosed by the solid line is the original uncorrected father mask shape pattern 3 〇. After the exposure step, there is a simulation on the uncorrected staggered mask pattern 3 〇. SimuUti〇n area

Page 7 1244678 V. Description of the invention (4) wageMO, and the range of its image 40 is smaller than the uncorrected cross calcium m0. However, the simulated area image 40 has four corners 42a '" b ,, and title i. Furthermore, these internal corners will cause a problem in the pattern inspection: it is to solve all the problems caused by the internal corners. :: /-To modify the traditional staggered mask feature pattern 30. According to the small system trend Λ, after the exposure step, the simulated area image technique is shown in the fifth and fifth figures. In the fifth figure, "two, but the green of the simulated area has internal angles and still makes the light = time and the mask writing time increase. Soap into the sun inch 5-3 Purpose and summary of the invention: In the above background of the invention, The conventional optical proximity effect correction has many shortcomings. The present invention provides a method of optical proximity effect correction (0pc, opticai correction) that does not need to use an external decoration line (senf) to modify the polygonal mask feature map with internal angles. =, And can obtain the smallest mask file size. By accurately modifying the mask feature pattern with inner corners, the regularity of the light can be improved. The writing unit is a rectangle with several rectangles (rectangu la r ~ shaped). Write units (or irregular-shaped) and reduce mask pattern inspection time.

1244678 V. Description of the invention (5) The main purpose of the present invention is to use a method of optical proximity effect correction without the use of additional trim lines to obtain the highest resolution mask pattern size. 0 The second object of the present invention is to provide An effective optical proximity effect correction method to reduce the output file size of optical proximity effect correction. Yet another object of the present invention is to provide a method for correcting optical proximity effects. For a polygonal mask characteristic pattern to form a plurality of rectangular or irregular quadrangular mask writing units, thereby improving the mask writing time. Another object of the present invention is to provide a method for improving the uniformity of the photomask and the pattern inspection time. According to the above-mentioned purpose of the Putian, the present invention is to provide a method of mask block g, without the need to use additional decorative lines to modify the mask characteristic pattern. The polygon mask feature pattern with at least one inner corner is modified so that there are no additional data points and mask writing units. Therefore, it can replace the traditional way of using decorative lines as optical proximity effect correction to obtain effective optical proximity effect correction. In addition, for regular mask writing ^, when the uncorrected polygon mask feature pattern is divided into several rectangular or irregular quadrangular mask writing units, the mask writing time can be improved ^. Furthermore, when using simple geometry, the individual rectangles after segmentation

1244678 V. Description of the invention (6) Rectangular-shaped mask writing units or trape_shape (j mask writing units) do not have internal corners, which can simplify pattern inspection time And the steps of photomask correction can be carried out easily. 5-4 Detailed description of the invention: Some embodiments of the present invention will be described in detail below. However, in addition to the detailed description, the present invention can also be widely implemented in other embodiments: and The scope of the present invention is not limited, and it is subject to the scope of subsequent patents. Pattern blocks ((0PC, case method. Case (Poly ygon effect correction) will produce additional proximity effect repairs, which can have large capacity characteristics In addition, the method of the present invention utilizes an optical proximity effect correction (without additional trimming as a pattern section). The optical mask feature map has at least one corner. (Feature pattern of the reticle), can obtain effective optical proximity OPC j optical proximit y correction) without extra data points, and each feature pattern segmented after optical positive does not have an internal angle = reducing the time of pattern inspection, which can further reduce the dryness, here, the photomask The feature pattern can be a polygon ^ = so the pattern block is used instead of the traditional decoration line ("Η f effect correction to achieve effective optical proximity effect repair 2. The mask writing time is also divided into 1244678 because of the original feature pattern V. Description of the invention (7) 'Rectangular shaped or trapeze shaped writing units are greatly improved. At the same time, when using simple geometric figures, the inspection time and correction of the mask feature pattern are both It is simpler and easier than using a complicated trimming method. Refer to Figure 6A, which shows a polygonal feature Tochigi 6 with three data points 62A, 62B, and 62C and at least three internal angles. In the method of the present invention, a method for segmenting a characteristic pattern of a mask and using optical proximity effect correction of trimming lines is provided. ^ The mask feature pattern 60 is divided into several irregular quadrilateral or rectangular feature patterns. As shown in Figure 6B, this figure shows that after the segmentation step, the feature pattern 60 is divided into several rectangles or irregularities. Regular quadrangles are written in units 60a to 60e, and eleven data points 62D to 62N are added after 60 divisions of the polygon feature pattern. Even if the number of data points increases, the irregular quadrilateral or rectangular feature pattern formed after ^ segmentation ^ Compared with the original polygon mask, the characteristic pattern inspection time and mask loading time of the optical fiber proximity effect correction are less. In addition, in the sixth c diagram, another polygon feature pattern 64 having at least three inner corners and three data points, ⑽a, 66B, and 66C, will have a polygon feature with three inner corners according to the method described above. The pattern 64 is divided into three rectangular or irregular characteristic patterns, 64a, 64b, and 64c, and four data points 66D, 66E, 66F, and 66G are added after the division of 5. Similarly, due to the special case, after the amendment of case 64, the original feature pattern figure 64 is simplified to a simpler feature pattern shape (64a, 64b, and 6 4c) (with a polygon feature map ^).

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V. Description of the invention (8) Comparison of correction of optical proximity effect of the 64 warp threads), and the three inner corners of the original special pattern 64a, 64b, and 64c that do not have the original characteristic pattern 64 / as shown in the sixth D figure Shows that the time for pattern inspection can be greatly reduced. Here, the included angles of the polygons proposed in the embodiment of the present invention include ^ greater than 0 degrees and less than 180 degrees. In addition, the optimal shape feature pattern between the blocks is described as a gap width (the feature pattern is divided into the divided feature widths) D. The illuminance of the light source can be calculated by formulating between the characteristic patterns, which can quickly calculate the optimal distance, and the characteristic patterns. The method of calculating the distance between two divided areas is proposed in the preferred embodiment of the invention. Here, the interval width between the individual feature patterns ^ divided by the ancient one 々τ is calculated. After being corrected by the optical proximity effect, the L-shape is reduced by two or three feature patterns. The distance between them is defined as the gap width (the gap emission wavelength is defined in Latin A, and the gap width / η is calculated, where η is the distance between two adjacent subdivided spaces', whose value is between 2 and 8. The photomask between the two individual feature patterns after the segmentation to obtain the most suitable optical proximity effect correction is provided. In the "first preferred embodiment of the present invention, a reticular pattern is divided into several Rule Four Sides / Eve ?: Originally used the traditional method of trimming: In addition to the problem that the corner effect does not exist, the capacity of the file output generated by the ^ positive specific pattern ^: ^ reduces the number of data points, 乂Minus ^. In the seventh diagram A to the ninth beta diagram 1244678 5 'invention description (9) step down, the diagram to the first case. In general, this does not shift the lithography step of the invention and intersect the multilateral View. The seventh A figure eight A to eighth d figure nine B figure Shows that in the present invention, the system refers to quartz (the transparent pattern can be a mask) or half-color burst, which is projected in the embodiment. The good-shaped isometric features are case-shaped mask feature patterns that represent segmented polygon features. Each step in the pattern to the seventh B. The figure shows an L-shaped mask. The figure shows a T-shaped mask pattern and the ninth a cross-shaped mask. The figure is for the transparency of the mask. The material of the flat plate is followed by an opaque pattern formed on the chrome (Cr) and a phase shift mask (PSM, half tone) on the reticle. The opaque pattern is on the spin-coated photoresist layer on the wafer surface. The graphic style of the transparent pattern includes any of the steps of L-shape, τ 'and its internal angles greater than 0 and less than 180 degrees. Near the effect rectangle in the special inspection time of the photomask, as in the case of the first A picture with 10 kinds of division lines. The middle system is an uncorrected L-shaped sign pattern 10 with a data point of 12A. In order to improve the mask loading time and feature pattern inspection, an optical neighbor correction method is proposed in the present invention that does not require additional trim lines , Segmentation is not repaired The mask characteristic pattern 10 forms two characteristic patterns 70a and 70b, as shown in Figure 7A. After the segmentation, the 'additional' is an increase of two points by 2 b and 7 2 C, and no additional The mask writing unit is increased, as shown in Figure 7B. In addition, as shown in Figures 7C and 7D, two irregular quadrilateral feature patterns are formed after the irregular [shaped mask feature map segmentation step. The advantage of this method is that the additional data points generated are less than the traditional method of using decoration, which greatly reduces the capacity and volume of the file. Page 13 1244678

V. Description of the invention (10) There are few feature maps after separation, and at the same time, the mask loading and mask writing can have an internal angle. Then, referring to Figure 8A, this figure is a mask feature. The pattern 20 is divided into two moments T8b in the second A picture, which is rumoredly ^. Here, only the rectangular mask characteristic map H mask% sign pattern 80a and the style are the same as the seventh C chart and the seventh!) Chart, which will be described in the U 4 example, and will not be repeated in other examples. In the segmented step f: the described implementation of the mask feature map t ', but the number of points of the two rectangular light data in each mask is increased, and in the second and sixth figures, there is nothing in the middle of the pattern' in the eighth A There are only two data in the picture. The eighth B diagram also shows that there is no external force. Two I: 'In the same way, according to the traditional third A diagram, the uncorrected stagger shape = 9. Profit = the method of the invention, the feature pattern is divided into three rectangles 3a, 3a, as shown in Figure 9A = 3 = cover! : Figure; 3 "with four inner corners and four data points i After the auxiliary step of η Τ 'in Figure Ann, each of the three separate rectangles Ξ :: What additional data points increase, still four The proportion of data seems to be the same. Similarly, in Figure W, it is also shown that there is no increase in the number of photomask writing units. Next, the tenth figure shows a structure image 100 on an interlaced feature pattern 30. The range enclosed by the solid line in the figure is the uncorrected interlacing.

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After the exposure step, the mask-shaped feature pattern 30 is formed on the unretouched! =: Feature pattern 30 to form a 2 m image (S1 ㈣ latlon area image) ioo after the simulation (virtual in the picture: two I, The range of this simulated area image 100 is smaller than the original intersection mask feature pattern 30. In addition, you are the one-day-shaped light correction effect of one person. 1ΐ: In the first-best embodiment of the present invention, the feature pattern f of the stroke mask with the dihedral mask is divided into several rectangular or irregular four-point mask features, so that The internal corner effect sr 'ya in the original mask feature pattern and there are no internal corners i in each feature pattern after the division i External force i 2' When trimming the mask feature pattern with trim lines, the number of extra-shell points generated is reduced , While also significantly reducing the capacity of the bid

" ί ί ί: The second preferred embodiment proposes another kind of segmentation multilateral two t !! Equation 'can also get more effective optical proximity in =: A to the thirteenth B diagram Different light ^ ”methods, similarly, here are also L-shaped (11th A to 10th-B, shape (Section: 28th to 12th β) and staggered mask feature map (Section Twelve A through Thirteenth to Sixteenth Figures) Three types of mask patterns are used as examples for illustration. Mu (Same as the same = the traditional L-shaped mask features of the first Figure A is not modified. 荦 ":: cut: Step, so that the uncorrected [shape mask feature map㈣] is divided into a divided feature map 11〇3, u〇b, and 丨 丨 吒, as shown in Figure 11A

1244678 The description of the five 'invention (12), and each of them is divided into 11 and B. It is also shown in the figure: In addition, after exposure to the original uncorrected T-shaped mask pattern similar to the tenth positive, it is divided into 20 segments. It becomes 120c, as in the twelfth, it is formed after the segmentation step, and after the segmentation, the reference pattern 30 and the four posterior 'original interlaced 130a to 130e, & People have inner corners. Refer to the tenth izg structure image. There are no inner corners in the original uncut feature pattern. And there are six data points U2B to 112G. In addition, there is no additional mask writing unit in the seventh. The feature pattern formed on the wafer after light is similar to the feature pattern. In the steps from FIG. A to FIG. 11B, the original unpatterned pattern 20 is divided, so that the τ-shaped mask features three rectangular divided feature patterns 120a, 120b, and "as shown in the figure." At the same time, as shown in Fig. 12B, after the step, there are no internal corners in each feature pattern after any additional mask is written into the unit. The test = two A picture shows the characteristics of an uncorrected staggered mask. The number of greedy points is 32A to 3 2D. After the segmentation step, the mask feature pattern 30 is divided into five rectangular blocks and eight additional data points 132E to 132L are added. In addition, as shown in Figure 13B, there is no early increase. There is no picture in the separate feature patterns. This figure shows a staggered mask feature pattern composed of solid lines among a staggered mask feature pattern. Fan Zheng's staggered mask feature pattern 30, after exposure step Ϊ 244678 " -------- 5. After the description of the invention (13), the & domain image " at the turn of the uncorrected. (Formed by dashed lines; ^ Sizheng pattern 30-the simulation area is closer to the original staggered shape ==, the characteristic pattern formed by the size of the image of this simulation area is; Dissimilar internal angle correction effect. Once: In the first preferred embodiment, the additional data, the valley size is larger than the first preferred embodiment,: ,,,, and the time of entry, When the mask is loaded, the door and the eve will cause the mask to be written according to the second segmented mask. However, the optical proximity effect is corrected. The same secret method is used to serve more effective patterns. No internal corners exist in the pass. The conclusions described on the inner corners of the various features after the segmentation. The present invention proposes to change the polygonal flower 1M m & of the right inner corner of subdivision 1. It also has a pattern called the shogun μ to form several rectangles or The method of discriminating the feature pattern is the same as that of the rule 7 = rule 4 plus the mask writing unit. Compared with 2 there will be no additional data points and steps. And in the pattern of female exposure, i-gate There is no inner corner. In addition, Biaoanliu 5 cuts: 2: It is greatly reduced for the reduction of the number of lean points, and at the same time: the k mask required by IS: a mask pattern that is a rectangular or irregular quadrilateral can be Immediate improvement. +4 hoods and pattern inspection time are based on fixed hair = hair

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Page Ϊ 244678 The diagram briefly illustrates the first diagram A to the first diagram c using conventional techniques. For the mask feature pattern using traditional optical proximity effects to correct each step = schematic diagram of the light; ~ The second diagram of the structure to The second diagram C is a schematic diagram of each step when using the traditional optical proximity effect correction for the Ding / Mask feature pattern. The second diagram A to the third c are constructed using the traditional technique. Steps when the pattern is corrected using the traditional optical proximity effect. The fourth figure is a top view showing the structure pattern of a staggered pattern of M wai * v m m special pattern; using the traditional technique; the fifth picture is Top view of the structural image showing the characteristic pattern of the staggered mask pattern using the conventional technique; / Figures A to VI: Figures D to 6D are the characteristic patterns of the polygon mask that are not discriminated according to the present invention to form The majority = ^ step top view; each step of the special test pattern. Figures 7A to 7D are based on the technique of splitting an L-shaped mask characteristic pattern 1 way according to the present invention. The drawings 191244678 Page simple plan view illustrating the respective steps of

The eighth diagrams A to B show the top views of the steps of the technique of the "T-shaped mask feature" disclosed in the present invention; the wood x forms two divided feature patterns. The ninth diagrams A to B are shown. The segmented-staggered photomask features and the technology disclosed by Beiming are top views of the steps of the table; " Yuemu is used to form three segmented feature patterns. The tenth figure is the photomask feature disclosed in accordance with the present invention. The top view technology of the structure of the pattern is the representation-staggered system table :: A to the top of the same figure V :: Figures 丨 < According to the technology disclosed in the present invention, the steps of segmenting the feature pattern; The figure first masks the feature patterns to form three, which represents the best brothers in the same figure: 8 :: The figure is a segmented feature map according to the technique disclosed in the present invention = step :: dimorphic mask feature patterns to form Three ^ ί, χί ^ ^ # ^ ^ ^ ^ ^ ^. Two of the minute feature patterns = two or two staggered mask feature patterns to form a top view of the Wuwei < Valley step; and page 20, 1244678, the diagram is simple Explanation The fourteenth figure is based on the technology disclosed in the present invention, and shows a staggered mask feature The image plan view showing the case. Representative symbols of the main parts: 10 Modified L-shaped mask characteristic pattern 10a Modified L-shaped mask characteristic pattern 12A Data points 12B ~ 12E Xi Bulikou data points 16a ~ 16e Mask writing unit_ 2 0 Uncorrected T-shaped mask feature pattern 22A ~ 22B data points 2 2 C ~ 2 2 J plus data points 26a ~ 26g Xibulikou mask writer unit 30 Unmodified staggered mask feature pattern 32A ~ 32D data points 32E ~ 32T plus data points 34a ~ 34d inner corner 36a ~ 36i Xiblikou mask writer unit 40 simulated area image Φ 42a ~ 42d corner 60 polygon mask feature pattern 60a ~ 60b rectangular feature Pattern 6 0 c ~ 6 0 e irregular quadrilateral characteristic pattern

Page 21 1244678 Schematic description of 6 2 A ~ 6 2 C data points 62D ~ 62N plus data points 64 polygon mask feature pattern 64a ~ 6 2c irregular quadrilateral feature pattern 66A ~ 66C data points 66D ~ 66G plus Data points 7 0 a ~ 7 0 f Rectangular feature patterns 72A ~ 72C Data points 8 0 a ~ 8 0 b Rectangular feature patterns 82A ~ 82B Data points 9 0 a ~ 9 0 c Rectangular feature patterns 92A ~ 92D Data points Number 100 Simulation area image 1 1 0 a ~ 1 1 0 c Rectangular feature pattern 112A ~ 112G Data points 1 2 0 a ~ 1 2 0 c Rectangular feature pattern 122A ~ 122F Data points 1 3 0 a ~ 1 3 0 e Rectangular feature pattern 132A ~ 132L Data points 140 Simulation area image

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Claims (1)

1244678 VI. Scope of Patent Application 1. A method for correcting a first feature pattern having one of the first inner angles by using an optical proximity effect, the method comprising: dividing the first feature pattern to form at least two separate feature patterns such that the two Each of the separate feature patterns does not have the first inner angle. 2. As in the method of applying for the first item of the patent scope, wherein a gap width between the two separate feature patterns described above can be calculated according to the formula D = λ / η, where λ is a light source irradiation wavelength and η is the two A space between the divided individual feature patterns. 3. The method according to item 2 of the patent application range, wherein the value of the distance between the two separate feature patterns is between 1.2 and 8. 4. The method according to item 1 of the scope of patent application, further comprising dividing the first feature pattern to form at least three separate feature patterns, so that the three separate feature patterns do not have the first inner corner. 5. The method of claim 1, wherein the first feature pattern includes a second inner corner adjacent to the first inner corner, so that the two separate feature patterns do not have the first inner corner and the Second inner angle. 6. The method of claim 5, further comprising dividing the first feature pattern to form at least three separate feature patterns, so that the three separate feature patterns do not have the first inner corner and the second feature pattern. Inside corner. Page 23, 1244678 6. Application for Patent Scope 7. The method of claim 6 for patent application, wherein the first feature pattern includes a third inner corner adjacent to one of the second inner corners, so that the three separate feature patterns The first inner angle, the second inner angle, and the third inner angle are not included in the middle. 8. The method according to item 7 of the patent application, wherein the first feature pattern includes a fourth inner corner adjacent to the third inner corner, so that the three separate feature patterns do not have the first inner corner, the The second inner angle, the third inner angle, and the fourth inner angle. _ 9. The method of claim 8 in the patent application scope further includes segmenting the first feature pattern to form at least five separate feature patterns, so that the five separate feature patterns do not have the first inner corner, the first Two inner angles, the third inner angle and the fourth inner angle. 1 0. A method for correcting an optical proximity effect, the method includes: providing a first feature pattern, wherein the first feature pattern has a first inner angle; segmenting the first feature pattern to form a second feature pattern and a third feature Pattern so that the second characteristic pattern and the third characteristic pattern do not have the first inner corner. 11 · If the method of applying for item 10 of the patent scope, further includes dividing the first feature Page 24 1244678 VI. Scope of patent application The pattern is levied to form a fourth feature pattern, so that the second feature pattern, the third feature pattern, and the fourth feature pattern do not have the first inner corner. 1 2. The method of claim 10, wherein the first feature pattern includes a second inner corner adjacent to the first inner corner, so that the second feature pattern and the third feature pattern do not have the The first inner corner and the second inner corner 1 3. The method according to item 12 of the patent application scope further includes dividing the first feature pattern to form a fifth feature pattern, so that the second feature pattern and the third feature pattern And the fifth feature pattern does not have the first inner angle and the second inner angle. 14. The method according to item 13 of the scope of patent application, wherein the first feature pattern includes a third inner corner adjacent to the second inner corner, such that the second feature pattern, the third feature pattern, and the fifth The feature pattern does not have the first inner angle, the second inner angle, and the third inner angle. 1 5 · The method according to item 14 of the scope of patent application, wherein the first feature pattern includes a fourth inner corner adjacent to the third inner corner, so that the second feature + pattern, the third feature pattern, and the first feature pattern The five characteristic patterns do not have the first inner corner, the second inner corner, the third inner corner, and the fourth inner corner. 16. The method according to item 15 of the scope of patent application, further comprising dividing the first feature Page 25, 1244678 6. Applying for a patent scope pattern to form a sixth feature pattern and a seventh feature pattern, so that the second feature pattern, the third feature pattern, the fifth feature pattern, the sixth feature pattern and The seventh feature pattern does not include the first inner angle, the second inner angle, the third inner angle, and the fourth inner angle. Including the French side, the French side is repairing a case within the corner angle of the number of light types in the study. The figure should be in the neighboring corner of the first phase, the middle and the first, the case and the corner. The first one is for the group of the second group of the group in the selected corner. The group of the fourth group in the corner-and the group of the third group in the corner. First, the first; the first group of the three groups in the special group of the selection, the selection of the case, the pattern of the pattern, the characteristics of the pattern, the second feature, the first, the first, and the self-selected map, the number of features Special case four maps, first picture, first picture, first picture, first and fourth, the first and the second, and the selection of the system, the number of signs, the corner, and the third, the first and the second, the fifth and the fifth, the second and the middle. The group of the case family, the fourth corner of the corner and the third corner of the corner, the second corner of the corner ·, the first election, the middle corner of the inner group 1 8. The method of applying for the scope of patent No. 17 , Further comprising segmenting the first feature pattern to form a sixth feature map And a seventh feature pattern, so that the second feature pattern, the third feature pattern, the fifth feature pattern, the sixth feature pattern, and the seventh feature pattern do not have the first inner corner and the second inner corner. The third inner angle and the fourth inner angle. Page 26