CN1285967C - Method for modifying charactristie pattern of regular polygon mask by use optical proximity effect - Google Patents
Method for modifying charactristie pattern of regular polygon mask by use optical proximity effect Download PDFInfo
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- CN1285967C CN1285967C CN 02101840 CN02101840A CN1285967C CN 1285967 C CN1285967 C CN 1285967C CN 02101840 CN02101840 CN 02101840 CN 02101840 A CN02101840 A CN 02101840A CN 1285967 C CN1285967 C CN 1285967C
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Abstract
The present invention provides a method for area patterns of a light shield. Additional decorative threads don't need to be used for correcting a characteristic pattern of a light shield, and the pattern is provided with an internal angle polygon; thereby, an effective correction of the optical proximity effect is obtained by the characteristic pattern which is provided with at least one internal angle, and any datum point which is arranged additionally isn't increased. Therefore, the traditional method which makes use of the decorative threads to be used as the correction method of the optical proximity effect is replaced; the effective correction of the optical proximity effect can be achieved further; in addition, when regular writing units of the light shield are referred, the non-correct characteristic pattern of the light shield is divided to form a plurality of rectangle or trapezium writing units of the light shield, writing time of the light shield can be improved, and the internal angles don't exist in the writing units of the light shield which is divided; additionally, when simple geometrical figures are used, pattern examinations can be simplified to enable correction steps to be easier.
Description
(1) technical field
The present invention is relevant for a kind of method of optical proximity correction mask pattern, in particular about a kind of optical proximity effect modification method with polygon light shield characteristic pattern of interior angle (corner).
(2) background technology
The minimum characteristic dimension (feature size) of micro integrated circuit (IC, integrated circuits) has been carried out many years.Along with feature is equivalent to dwindling of size, different process technology limit makes that the making of integrated circuit is difficult more.And wherein, a process technology limit is at photolithography step (photolithography).
The important composition of photolithography is a light shield, and it is pattern characteristics according to integrated circuit (IC) design that this light shield comprises a pattern.These light shields generally comprised a transparent glass plate and cover the bright block material of a design transfer for example chromium (Cr, chromium).
For the high-order wafer, the increase that the complicacy of design and the file size of light shield all can be very fast.For example, be the file of 500 hundred million bits (Giga Bytes) for size, the time that light shield writes need take two days the time ask.Therefore, the size that how to reduce file is important subject under discussion.In traditional optical proximity effect correction (OPC, optical proximity correction) theory is to utilize the ornamental thread (extraserif) that adds to revise the interior angle pattern.For single interior angle (inner corner), the quantity that its data point is counted may increase to five by one.In a word, the file size of utilizing the ornamental thread that adds can increase output reaches and increases the light shield write time apace, and this is because ornamental thread needs the point of Sub-reso to cause usually.Therefore, the speed that the number of data points size that writes can increase and write can be slack-off.
At Figure 1A to Fig. 3 C is to be illustrated in tradition utilization to add the optical proximity effect modification method that ornamental thread (extra serif) is revised the light shield characteristic pattern of L shaped (L-shaped), T shape (T-shaped) and stagger mode (crossed-shaped), and utilizes the data point (extra data point) and the light shield unit of writing (maskwriting unit) that add to revise these optical proximity effect correction characteristic patterns.At Figure 1A to Fig. 1 C is the light mask image of expression corresponding to integrated circuit patterns.Figure 1A is expression one a uncorrected L shaped light shield characteristic pattern 10.There is interior angle to produce for fear of L shaped light shield characteristic pattern, utilize the uncorrected L shaped light shield characteristic pattern 10 of ornamental thread correction to form a L shaped light shield characteristic pattern 10a who revises, and the L shaped mask pattern of this correction has a single interior angle (single inner corner) 14, as shown in Figure 1B.Therefore, the data point that adds is counted and the size of file size all can increase after correction.In uncorrected L shaped light shield characteristic pattern 10, have only a number of data points 12A, yet the characteristic pattern 10a of formed correction after revising has four and adds number of data points 12B, 12C, 12D and 12E.Therefore, capacity and the file size size of handling at computer data all can increase along with the increase of number of data points.With reference to figure 1C, the L shaped light shield characteristic pattern of correction is divided into five rectangular characteristic pattern 16a to 16e, makes to produce two light shield units of writing that add after the light shield segmentation procedure.
Then, be that expression has two data point 22A and the uncorrected T shape of 22B light shield characteristic pattern 20 among Fig. 2 A.It is identical with Figure 1A to Fig. 1 C that it revises step, and T shape (T-shaped) the light shield characteristic pattern 20a of formed correction after the ornamental thread correction has two interior angle 24a and 24b, as shown in Fig. 2 B.Be to be illustrated in through revising eight of back generations to add number of data points 22C to 22J in Fig. 2 C, and light shield produce seven 26a to 26h of light shield unit that add after over-segmentation.Then, with reference to figure 3A, this figure is uncorrected stagger mode (crossed-shaped) the light shield characteristic pattern 30 that expression has four data point 32A to 32D.As described above, after the optical proximity effect correction through the ornamental thread method, the stagger mode light shield characteristic pattern 30a through revising has four interior angle 34a to 34d and produces 16 and adds number of data points 32E to 32T.Therefore, output file amount of capacity and the increase of light shield write time are because ornamental thread need increase the reason of new data point.
Then, Fig. 4 is the structural images (contourimage) of the uncorrected stagger mode light shield characteristic pattern 30 of expression.By the scope that solid line surrounded is original uncorrected stagger mode light shield characteristic pattern 30, after the process step of exposure, the back by the simulated domain image (simulation area image) 40 that dotted line constituted of one process simulation arranged, and the scope of its image 40 is less than uncorrected stagger mode light shield characteristic pattern 30 on uncorrected stagger mode light shield characteristic pattern 30.But simulated domain image 40 has four angle 42a, 42b, 42c and 42d, and the problem when further these interior angles can cause pattern to check.In addition, in order to solve the variety of problems that interior angle produces, traditional technology is to utilize ornamental thread to revise traditional stagger mode light shield characteristic pattern 30.Shown in Fig. 3 B, after the process step of exposure, the size of simulated domain image 40a is to level off to utilize ornamental thread correction stagger mode light shield characteristic pattern 30a afterwards, as represented among Fig. 5.In Fig. 5, though the approaching stagger mode light shield characteristic pattern 30a that has revised of the range size of simulated domain image 40a, but simulated domain image 40a has interior angle to produce and still make light shield be written into the time and the light shield write time increases.
In above-mentioned background of invention, many shortcomings that traditional optical proximity effect correction is produced, the invention provides a kind of optical proximity effect correction (OPC that adds ornamental thread (serif) that do not need to utilize, opticalproximity correction) mode has the polygon light shield characteristic pattern of interior angle with correction, and can obtain minimum light shield file size size, have several the rectangle unit of writing (or irregular quadrilateral) and shorten the mask pattern supervision time by accurately revising the light shield unit of writing that the light shield characteristic pattern with interior angle can improve systematicness.
(3) summary of the invention
Fundamental purpose of the present invention is that the method utilizing an optical proximity effect correction and need not use the ornamental thread that adds is to obtain the mask pattern size of highest resolution.
Another object of the present invention provides an effective optical proximity effect modification method to reduce the output file size of optical proximity effect correction.
A further object of the present invention provides a kind of optical proximity effect modification method polygon light shield characteristic pattern is formed several rectangles or the irregular quadrilateral light shield unit of writing, so as to improving the light shield write time.
Another purpose of the present invention provides a kind of optical proximity effect modification method, improves the consistance of light shield and reduces the pattern supervision time.
A kind of method of utilizing the optical proximity effect correction according to an aspect of the present invention is characterized in, comprising: one first characteristic pattern with one first interior angle is provided, and this first interior angle is to be intersected by two inner side edges that constitute this first characteristic pattern to constitute; Cut apart this this first characteristic pattern to form at least two characteristic patterns that separate, do not comprise this first interior angle between these two characteristic patterns that separate with first interior angle.
The method of a kind of optical proximity effect correction according to a further aspect of the invention is characterized in, comprising: one first characteristic pattern with one first interior angle is provided, and this first interior angle is to be intersected by two inner side edges that constitute this first characteristic pattern to constitute; Cut apart this this first characteristic pattern to form one second characteristic pattern and one the 3rd characteristic pattern, do not comprise this first interior angle between this second characteristic pattern and the 3rd characteristic pattern with this first interior angle.
A kind of optical adjacent correction method according to another aspect of the invention, it is characterized in that, comprise: one first characteristic pattern is provided, this first interior angle is to be intersected by two inner side edges that constitute this first characteristic pattern to constitute, wherein, the interior angle number of this first characteristic pattern is to determine by one first interior angle and adjacent to one second interior angle, one the 3rd interior angle and the combination of one the 4th interior angle of this first interior angle; Cut apart this first characteristic pattern, wherein, separately the characteristic pattern number of this first characteristic pattern is to be determined by one second characteristic pattern, one the 3rd characteristic pattern, one the 4th characteristic pattern and the combination of one the 5th characteristic pattern, wherein, not comprising this interior angle number between this second characteristic pattern, the 3rd characteristic pattern, the 4th characteristic pattern and the 5th characteristic pattern is to be determined by this first interior angle, this second interior angle, the 3rd interior angle and the combination of the 4th interior angle.
The invention provides a kind of mode of mask pattern block, and need not use the ornamental thread that adds to revise the light shield characteristic pattern.Revise feasible do not have any number of data points that adds and the increase of the light shield unit of writing for polygon light shield characteristic pattern with at least one interior angle (Inner corner).Therefore, can replace tradition and utilize the mode of ornamental thread, obtain effective optical proximity effect correction as the optical proximity effect correction.In addition, write, when uncorrected polygon light shield characteristic pattern is divided into several rectangles or the irregular quadrilateral light shield unit of writing, can improve the time that light shield writes for the light shield of rule.Moreover when using the simple geometric figure, the existence that each rectangle light shield unit of writing after cutting apart or the irregular quadrilateral light shield unit of writing do not have interior angle can the simplified pattern supervision time and can be easier to carry out the step that light shield is proofreaied and correct.
For further specifying described purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
(4) description of drawings
Figure 1A is the traditional technology of use, each the step structural representation when utilizing traditional optical proximity effect correction for a L shaped light shield characteristic pattern to Fig. 1 C;
Fig. 2 A is the traditional technology of use, each the step structural representation when utilizing traditional optical proximity effect correction for a T shape light shield characteristic pattern to Fig. 2 C;
Fig. 3 A is the traditional technology of use, each the step structural representation when utilizing traditional optical proximity effect correction for an alternating expression light shield characteristic pattern to Fig. 3 C;
Fig. 4 is the vertical view of the structure plan of an alternating expression light shield characteristic pattern of use conventional art;
Fig. 5 is for using the vertical view of traditional technology through the structural images of stagger mode light shield characteristic pattern after the ornamental thread correction;
Fig. 6 A to Fig. 6 D is cut apart the vertical view of polygon optical cover characteristic pattern with each step of forming most characteristic patterns according to disclosed technology;
Fig. 7 A to Fig. 7 D is cut apart a L shaped light shield characteristic pattern to form two vertical views of cutting apart each step of feature pixel according to disclosed technology;
Fig. 8 A to Fig. 8 B is cut apart a T shape light shield characteristic pattern according to disclosed technology to cut apart the vertical view of each step of characteristic pattern to form two quilts;
Fig. 9 A to Fig. 9 B is cut apart a stagger mode light shield characteristic pattern according to disclosed technology to cut apart the vertical view of each step of characteristic pattern to form three quilts;
Figure 10 is the vertical view according to the structure plan of a stagger mode light shield characteristic pattern of disclosed technology;
Figure 11 A to Figure 11 B is cut apart a L shaped light shield characteristic pattern to form three vertical views of cutting apart each step of characteristic pattern according to disclosed technology with diverse ways;
Figure 12 A to Figure 12 B is cut apart a T shape light shield characteristic pattern to form three vertical views of cutting apart each step of characteristic pattern according to disclosed technology with diverse ways;
Figure 13 A to Figure 13 B is cut apart a stagger mode light shield characteristic pattern according to disclosed technology with diverse ways.
Figure 14 is the vertical view according to a stagger mode light shield characteristic pattern structural images of the present invention.
(5) embodiment
Some embodiments of the present invention will be described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limited, and it is as the criterion with appending claims institute restricted portion.
Method of the present invention is to utilize the ornamental thread that need not the add method as a kind of optical proximity effect correction light shield characteristic pattern of pattern block (pattern section).Can obtain effective optical proximity effect correction and can not produce the number of data points that adds for light shield characteristic pattern with at least one interior angle (corner), and by not having the existence of interior angle in each characteristic pattern of being cut apart after the optical proximity effect correction, can reduce the time that pattern is checked, further can be so that file size reduces significantly, at this, the light shield characteristic pattern can be a polygon light shield characteristic pattern.So utilize the mode of pattern block to replace the optical proximity effect correction of traditional ornamental thread, to reach optical proximity effect correction effectively.In addition, also significantly improve in the time that light shield writes because of the rectangle or the irregular quadrilateral unit of writing of primitive characteristics pattern through being partitioned into several blocks.Simultaneously, when using the simple geometric figure, supervision time of light shield characteristic pattern and proofread and correct Billys all and come simply with the ornamental thread correcting mode of complexity and easily.
With reference to figure 6A, be that expression one has three data point 62A, 62B and 62C reaches the polygon characteristic pattern 60 that has three interior angles at least.Provide a kind of method of cutting apart the light shield characteristic pattern and not needing to use the optical proximity effect correction of ornamental thread in the method for the invention, polygon light shield characteristic pattern 60 is divided into several irregular quadrilaterals or the characteristic pattern of rectangle.Shown in Fig. 6 B, this figure is illustrated in through after the segmentation procedure, polygon characteristic pattern 60 is divided into several rectangles or the trapeziform 60a to 60e of the unit of writing, after cutting apart, this external polygon characteristic pattern 60 increases by 11 data point 62D to 62N, even number of data points increases, formed irregular quadrilateral or rectangular characteristic pattern are written into lacking that (mask loading) time will come than original polygonal light shield through the characteristic pattern supervision time and the light shield of ornamental thread optical proximity effect correction Hou after cutting apart.In addition, at Fig. 6 C is the polygon characteristic pattern 64 that has at least three interior angles and three data point 66A, 66B and 66C for another kind, according to method described above, the polygon characteristic pattern 64 that will have three interior angles is divided into three rectangles or difform characteristic pattern 64a, 64b and 64c, and increases by four number of data points 66D, 66E, 66F and 66G after cutting apart.Similarly, because characteristic pattern 64 is after revising, original characteristic pattern figure 64 is simplified to better simply characteristic pattern shape (64a, 64b and 64c) (comparing through the correction of ornamental thread optical proximity effect with polygon characteristic pattern 64), and three interior angles that in characteristic pattern 64a, 64b that each is cut apart and 64c, do not have former characteristic pattern 64, represented as Fig. 6 D, make the time of pattern inspection significantly to reduce.At this, the polygonal angle that is proposed in embodiments of the present invention comprises greater than 0 degree, and less than 180 degree.
In addition, in most preferred embodiment of the present invention, propose to calculate two separately methods of cutting apart optimum distance between the block.At this, with L shaped characteristic pattern with an interior angle as the interval width explanation between each characteristic pattern of computed segmentation.After through the optical proximity effect correction, L shaped characteristic pattern is divided into two or three characteristic patterns at least, the distance between divided each characteristic pattern of two vicinities is modified to interval width D.The light source irradiation wavelength then is to revise with Latin λ, and then interval width can calculate with formula D=λ/n, and wherein n is two spacings between divided each characteristic pattern of vicinity, and its numerical value is between 1.2 to 8.Method can calculate the optimum distance of cutting apart between two each characteristic patterns afterwards soon thus, and can obtain the light shield characteristic pattern of the suitableeest optical proximity effect correction.
In first most preferred embodiment of the present invention, provide and a kind of the polygon characteristic pattern is divided into several irregular quadrilaterals or the characteristic pattern of rectangle, outside the interior angle effect problem that feasible script utilizes the method correction characteristic pattern of traditional ornamental thread to be produced did not exist, the generation that also can reduce number of data points made the amount of capacity of file output to reduce.It in Fig. 7 A to Fig. 9 B the vertical view of expression each step when cutting apart the polygon characteristic pattern.Fig. 7 A to Fig. 7 D is that expression one L shaped light shield characteristic pattern, Fig. 8 A to Fig. 8 B are that expression one T shape light shield characteristic pattern and Fig. 9 A to Fig. 9 B are expression one stagger mode (cross-shaped) light shield characteristic patterns.In the present invention, provide a transparent plate as light shield, it is quartzy that its material is generally.Then, one opaque pattern is formed on the light shield, and this opaque pattern can be chromium (Cr), phase displacement light-cover (PSM, phase shift mask) or shadow tone (half tone), opaque pattern is to be projected on the photoresist layer of the spin coating on the wafer surface when little shadow step.In an embodiment of the present invention, characteristic patterns such as that the graphic style of opaque pattern includes is L shaped, T shape and stagger mode, and the interior angle angle is greater than 0 and less than the polygon light shield characteristic patterns of 180 degree.
In Figure 1A for having a number of data points 12A and uncorrected L shaped light shield characteristic pattern 10, be written into time and characteristic pattern supervision time in order to reduce light shield, the one optical proximity effect modification method that need not use the ornamental thread that adds is proposed in the present invention, cut apart characteristic pattern 70a and 70b that uncorrected light shield characteristic pattern 10 forms two rectangles, shown in Fig. 7 A.
Through after the segmentation procedure, the number of data points that adds is to increase by 2 72B and 72C, and without any the light shield that adds write people unit and increase, represented as Fig. 7 B.In addition, shown in Fig. 7 C and Fig. 7 D, the red light shield characteristic pattern 10 of irregular L forms two irregular quadrilateral characteristic patterns after segmentation procedure, the advantage of the mode that this kind cut apart is that data point is traditional utilizes ornamental thread to come fewly as the method for revising to adding of being produced, make the amount of capacity of file significantly reduce, and do not have interior angle between each characteristic pattern after separately and produce, can reduce light shield simultaneously yet and be written into the time that writes with light shield.
Then, with reference to figure 8A, this figure is partitioned into two rectangle light shield characteristic pattern 80a and 80b according to T shape light shield characteristic pattern 20 among traditional Fig. 2 A.Only illustrate as embodiment that at this other pattern such as Fig. 7 C and Fig. 7 D are identical, below this reaches, no longer add to give unnecessary details among the described embodiment with rectangle light shield characteristic pattern.After segmentation procedure, produce two rectangle light shield characteristic patterns, do not increase but in each rectangle light shield characteristic pattern, have any number of data points, in Fig. 2 A, have only two number of data points 22A and 22B, in Fig. 8 A, have only two number of data points 82A and 82B yet.In addition, in Fig. 8 B, also represent without any the outer light shield unit of writing increase.
Similarly, utilize method of the present invention that this characteristic pattern 30 is divided into three rectangular patterns 90a, 90b and 90c, shown in Fig. 9 A according to the not correction stagger mode light shield characteristic pattern 30 of traditional Fig. 3 A.In original uncorrected stagger mode light shield characteristic pattern 30, have four interior angles and four number of data points 32A to 32D.After the process segmentation procedure, not having any number of data points that adds in each rectangular patterns of three of separating increases, and remains four number of data points 92A to 92D, and similarly, also representing in Fig. 9 B increases without any the light shield unit of writing that adds.
Then, Figure 10 is a structural images 100 that is illustrated on the stagger mode characteristic pattern 30.Be uncorrected stagger mode light shield characteristic pattern 30 by the scope that solid line surrounded in the drawings, after the process step of exposure, form one by formed simulated domain image (simulation area lmage) 100 (parts that dotted line constituted among the figure) after the simulation on uncorrected stagger mode light shield characteristic pattern 30, the scope of this simulated domain image 100 is less than original stagger mode light shield characteristic pattern 30.In addition, structural images 100 is to represent a similar interior angle correction effect.
Rod is according to described above, being that proposition is a kind of in first most preferred embodiment of the present invention is divided into several rectangles or trapeziform light shield characteristic pattern with polygon light shield characteristic pattern, make the interior corner effect in the original light shield characteristic pattern reduce, and there is not the existence of interior angle in each characteristic pattern after cutting apart, in addition, when utilizing ornamental thread correction light shield characteristic pattern, reduce produced add counting of data point, also significantly reduce the capacity of file simultaneously.
At second most preferred embodiment of the present invention is to propose the another kind of mode of cutting apart polygon light shield pattern, similarly also can obtain more effective optical proximity effect correction.At Figure 11 A to Figure 13 B is the different mask pattern partitioning scheme of expression, similarly, also illustrates as an example with L shaped (Figure 11 A to Figure 11 B), T shape (Figure 12 A to Figure 12 B) and three kinds of mask pattern of stagger mode light shield characteristic pattern (Figure 13 A to Figure 13 B) at this.
Similarly the uncorrected L shaped light shield characteristic pattern 10 of traditional Figure 1A is carried out segmentation procedure, make uncorrected L shaped light shield characteristic pattern 10 be divided into three quilts and cut apart characteristic pattern 110a, 110b and 110c, shown in Figure 11 A, and do not have the interior angle existence in each divided characteristic pattern.And producing six number of data points 112B to 112G after over-segmentation, in addition, expression does not have any light shield unit of writing generation that adds yet in Figure 11 B.In addition, after overexposure on wafer formed characteristic pattern be similar to original uncorrected characteristic pattern.
Similar in appearance to the step of Figure 11 A to Figure 11 B, carry out segmentation procedure for original uncorrected T shape light shield characteristic pattern 20, the quilt that makes T shape light shield characteristic pattern 20 be partitioned into three rectangles is cut apart characteristic pattern 120a, 120b and 120c, as shown in Figure 12 A.Simultaneously, as represented among Figure 12 B,, do not have any light shield unit of writing that adds and form, and do not have interior angle to exist after cutting apart in each characteristic pattern through after the segmentation procedure.
Next, be a uncorrected stagger mode light shield characteristic pattern 30 with reference to figure 3A and have four number of data points 32A to 32D.Through after the segmentation procedure, original stagger mode light shield characteristic pattern 30 is divided into five rectangle block 130a to 130e, and increases by eight and add number of data points 132E to 132L, as shown in Figure 13 A.In addition, as shown in Figure 13 B, without any the light shield unit of writing that adds increase, in each characteristic pattern that separates, do not have interior angle to exist yet.
With reference to Figure 14, this figure is the structural images of expression one stagger mode light shield characteristic pattern.Be original uncorrected stagger mode light shield characteristic pattern 30 with the stagger mode light shield characteristic pattern scope that solid line was constituted in the drawings, after step of exposure, on uncorrected stagger mode light shield characteristic pattern 30, form a simulated domain image 140 (scope that constitutes by dotted line), the approximate original stagger mode light shield characteristic pattern 30 of the size of this simulated domain image.Therefore, the formed characteristic pattern of structural images is the similar interior angle correction effect of expression.
Even in second most preferred embodiment, the number of data points that adds and file size size is come manyly than first most preferred embodiment, and causes time that light shield writes, is written into light shield time and the increase of characteristic pattern supervision time.Yet, can obtain effectively optical proximity effect correction according to second kind of method of cutting apart the light shield characteristic pattern, similarly, in each characteristic pattern after over-segmentation, there is not interior angle to exist.
According to conclusion described above, change proposed by the invention cut apart have interior angle polygon light shield characteristic pattern to produce several rectangles or the trapeziform mode of cutting apart characteristic pattern, make and not have the data point that adds and the light shield that adds write people unit, more traditional ornamental thread method does not have the existence of interior angle for less and after step of exposure in the pattern of cutting apart.In addition, the file size size is also dwindled significantly because of the minimizing of number of data points, simultaneously, owing to formed rectangle or needed light shield write time of trapeziform light shield characteristic pattern after cutting apart, be written into light shield time and pattern supervision time and can obtain immediately minimizing.
Certainly, those of ordinary skill in the art will be appreciated that, above embodiment is used for illustrating the present invention, and be not to be used as limitation of the invention, as long as in connotation scope of the present invention, all will drop in the scope of claims of the present invention variation, the modification of the above embodiment.
Claims (18)
1. a method of utilizing the optical proximity effect correction is characterized in that, comprising:
One first characteristic pattern with one first interior angle is provided, and this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;
Cut apart this this first characteristic pattern to form at least two characteristic patterns that separate, do not have this first interior angle in these two characteristic patterns that separate with first interior angle.
2. the method for claim 1, it is characterized in that the interval width between these two characteristic patterns that separate can calculate according to formula D=λ/n, wherein, going into is a light source irradiation wavelength, and n is the spacing between these two each characteristic patterns of cutting apart.
3. method as claimed in claim 2 is characterized in that, the numerical value of this spacing between described two these characteristic patterns that separate is between 1.2 to 8.
4. the method for claim 1 is characterized in that, also comprises cutting apart this this first characteristic pattern with first interior angle with at least three characteristic patterns that separate of formation, and does not comprise this first interior angle in these three characteristic patterns that separate.
5. the method for claim 1 is characterized in that, described first characteristic pattern comprises one second interior angle adjacent to this first interior angle, and does not have this first interior angle and this second interior angle in these two characteristic patterns that separate.
6. method as claimed in claim 5 is characterized in that, also comprises cutting apart this first characteristic pattern with at least three characteristic patterns that separate of formation, and does not have this first interior angle and this second interior angle in these three characteristic patterns that separate.
7. method as claimed in claim 6 is characterized in that, described first characteristic pattern comprises one the 3rd interior angle adjacent to this second interior angle, and does not have this first interior angle, this second interior angle and the 3rd interior angle in these three characteristic patterns that separate.
8. method as claimed in claim 7, it is characterized in that, described first characteristic pattern comprises one the 4th interior angle adjacent to the 3rd interior angle, does not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in these three characteristic patterns that separate.
9. method as claimed in claim 8, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in these five characteristic patterns that separate to form at least five characteristic patterns that separate.
10. the method for an optical proximity effect correction is characterized in that, comprising:
One first characteristic pattern with one first interior angle is provided, and this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;
Cut apart this this first characteristic pattern to form one second characteristic pattern and one the 3rd characteristic pattern, do not have this first interior angle in this second characteristic pattern and the 3rd characteristic pattern with this first interior angle.
11. method as claimed in claim 10 is characterized in that, also comprises cutting apart this first characteristic pattern to form one the 4th characteristic pattern, does not have this first interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 4th characteristic pattern.
12. method as claimed in claim 10 is characterized in that, described first characteristic pattern comprises one second interior angle adjacent to this first interior angle, does not have this first interior angle and this second interior angle in this second characteristic pattern and the 3rd characteristic pattern.
13. method as claimed in claim 12, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle and this second interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern to form one the 5th characteristic pattern.
14. method as claimed in claim 13, it is characterized in that, described first characteristic pattern comprises one the 3rd interior angle adjacent to this first interior angle, does not have this first interior angle, this second interior angle and the 3rd interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern.
15. method as claimed in claim 14, it is characterized in that, described first characteristic pattern comprises one the 4th interior angle adjacent to the 3rd interior angle, does not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern and the 5th characteristic pattern.
16. method as claimed in claim 15, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern, the 5th characteristic pattern, the 6th characteristic pattern and the 7th characteristic pattern to form one the 6th characteristic pattern and one the 7th characteristic pattern.
17. an optical adjacent correction method is characterized in that, comprising:
One first characteristic pattern is provided, wherein, the interior angle number of this first characteristic pattern is to determine by one first interior angle and adjacent to one second interior angle, one the 3rd interior angle and the combination of one the 4th interior angle of this first interior angle, and wherein this first interior angle is to intersect institute by the two inboard sides that constitute this first characteristic pattern to constitute;
Cut apart this first characteristic pattern, wherein, separately the characteristic pattern number of this first characteristic pattern is to be determined by one second characteristic pattern, one the 3rd characteristic pattern, one the 4th characteristic pattern and the combination of one the 5th characteristic pattern, wherein, not having this interior angle number in this second characteristic pattern, the 3rd characteristic pattern, the 4th characteristic pattern and the 5th characteristic pattern is to be determined by this first interior angle, this second interior angle, the 3rd interior angle and the combination of the 4th interior angle.
18. method as claimed in claim 17, it is characterized in that, also comprise and cut apart this first characteristic pattern, do not have this first interior angle, this second interior angle, the 3rd interior angle and the 4th interior angle in this second characteristic pattern, the 3rd characteristic pattern, the 5th characteristic pattern, the 6th characteristic pattern and the 7th characteristic pattern to form the 6th characteristic pattern and one the 7th characteristic pattern.
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| CN 02101840 CN1285967C (en) | 2002-01-09 | 2002-01-09 | Method for modifying charactristie pattern of regular polygon mask by use optical proximity effect |
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| CN100339765C (en) * | 2003-08-18 | 2007-09-26 | 旺宏电子股份有限公司 | Light cover for decreasing optical approaching effect |
| CN1320404C (en) * | 2003-10-09 | 2007-06-06 | 中芯国际集成电路制造(上海)有限公司 | Modular optical proximate correction configuration and method thereof applicable for integrated circuit |
| JP4479486B2 (en) * | 2004-11-30 | 2010-06-09 | ソニー株式会社 | Mask pattern correction method |
| US7650588B2 (en) * | 2005-09-26 | 2010-01-19 | Micronic Laser Systems Ab | Methods and systems for pattern generation based on multiple forms of design data |
| CN106338883B (en) * | 2015-07-16 | 2020-05-08 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN108646515A (en) * | 2018-04-27 | 2018-10-12 | 深圳市华星光电技术有限公司 | A kind of mask plate, array substrate |
| CN110244520B (en) * | 2019-05-22 | 2020-09-15 | 上海交通大学 | Method for processing silicon nano cylinder by electron beam lithography |
| CN112864023B (en) * | 2021-01-07 | 2022-04-29 | 长鑫存储技术有限公司 | Semiconductor mark manufacturing method and semiconductor mark |
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2002
- 2002-01-09 CN CN 02101840 patent/CN1285967C/en not_active Expired - Lifetime
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