CN1577084A - Method for producing grey mask - Google Patents

Method for producing grey mask Download PDF

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CN1577084A
CN1577084A CN 200410062538 CN200410062538A CN1577084A CN 1577084 A CN1577084 A CN 1577084A CN 200410062538 CN200410062538 CN 200410062538 CN 200410062538 A CN200410062538 A CN 200410062538A CN 1577084 A CN1577084 A CN 1577084A
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film
portion
light
resist
semi
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CN1284044C (en
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井村和久
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Hoya株式会社
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Abstract

提供一种可以制造高品质的TFT的中间色彩膜类型的灰调掩模的制造方法,具有下述工序:准备在透明基板(21)上顺序形成半透光膜(22)和遮光膜(23)的掩模坯料的工序;在该掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形(24a)的工序;把该抗蚀图形(24a)作为掩模,蚀刻遮光膜(23)和半透光膜(22)并形成透光部的工序;仅去除残留在半透光部上的抗蚀图形的工序;把所残留的抗蚀图形作为掩模,蚀刻遮光膜(23a)并形成半透光部的工序。 To provide a method for manufacturing a gray-tone mask for producing high-quality color TFT intermediate film type, having the following steps: preparing a semipermeable film (22) and a light shielding film (23 in the sequence (21) of the transparent substrate ) a step of mask blanks; forming a resist film on the mask blank; a step of exposing the resist film, the process comprising: a semi-transparent portion formed in a portion of the resist film, with the in the graphics resolution limit of an exposure apparatus exposing the resist film according to the following pattern is exposed; developing treatment to form a light shielding portion forming portion and forming a resist film remaining portion of the semi-transparent portion of different values resist pattern (24a) of a step; to the resist pattern (24a) as a mask, etching the light shielding film (23) and a semitransparent film (22) to form a translucent portion; semipermeable only remove residual step resist pattern on the light unit; to the remaining resist pattern as a mask, etching the light shielding film (23a) and the semi-transparent portion forming step.

Description

灰调掩模的制造方法 The method of manufacturing a gray tone mask

技术领域 FIELD

本发明涉及一种适合用于制造薄膜晶体管液晶显示装置(Thin FilmTransistor Liquid Crystal Display:以下称为TFT-LCD)等的灰调掩模(graytonemask/グレ—ト—ンマスク)的制造方法。 The present invention relates to a method suitable for manufacturing a thin film transistor liquid crystal device (Thin FilmTransistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) display gray tone mask or the like (graytonemask / Corning Toray - Suites - nn ma su ku) manufacturing method.

背景技术 Background technique

TFT-LCD与CRT(阴极射线管)相比,具有容易薄型化、消耗电力低的优点,所以目前正在快速推进商品化。 TFT-LCD and a CRT (cathode ray tube) as compared with easily thinned, the advantages of low power consumption, it is currently being commercialized rapidly advancing. TFT-LCD具有在排列成矩阵状的各像素中排列有TFT的结构的TFT基板,以及对应各像素隔着液晶相叠合排列了红色、绿色和蓝色的像素图形的滤色器的概略结构。 TFT-LCD having the TFT substrate are arranged in each pixel arranged in a matrix in the TFT structure, and liquid crystal corresponding to each pixel via the overlapping arrangement with the red, the schematic structure of the color filter of green and blue pixel patterns . 在TFT-LCD中,制造工序数目多,仅制造TFT基板也需要使用5~6个光掩模。 In the TFT-LCD, the number of manufacturing processes and more, need only producing a TFT substrate using a photomask 5-6.

在这种状况下,提出了使用4个光掩模制造TFT基板的方法(例如,下述专利文献1,非专利文献1)。 In this situation, we proposed the use of photomasks method for producing a TFT substrate (e.g., Patent Document 1, Non-Patent Document 1).

该方法通过使用具有遮光部和透光部和半透光部(灰调部)的光掩模(以下称为灰调掩模),降低所使用的掩模数量。 The method by using a light transmitting portion and light shielding portion and a semi-transparent portion (gray tone portion) of the photomask (hereinafter referred to as a gray tone mask), to reduce the number of masks used. 图5和图6(图6是图5的制造工序的延续)表示使用了灰调掩模的TFT基板的制造工序的一例。 Figures 5 and 6 (FIG. 6 is a continuation of the manufacturing process of FIG. 5) represents an example of manufacturing the TFT substrate of the gray-tone mask.

在玻璃基板1上形成栅电极用金属膜,利用使用了光掩模的光刻工艺形成栅电极2。 Forming a gate electrode on a glass substrate 1 with a metal film by a photolithography process using a photomask for forming the gate electrode 2. 然后,形成栅极绝缘膜3、第1半导体膜4(a-Si)、第2半导体膜5(N+a-Si)、源极漏极用金属膜6、以及正极型光致抗蚀膜7(图5(1))。 Then, a gate insulating film 3, a first semiconductor film 4 (a-Si), the second semiconductor film 5 (N + a-Si), source and drain 6, and the positive type photoresist film with a metal film 7 (FIG. 5 (a)). 之后,使用具有遮光部11和透光部12和半透光部13的灰调掩模10,将正极型光致抗蚀膜7曝光、显影,由此形成覆盖TFT沟道部和源极漏极形成区域和数据线形成区域,并且使沟道部形成区域薄于源极漏极形成区域的第1抗蚀图形7a(图5(2))。 Thereafter, the light shielding portion having a light transmitting portion 11 and a gray-tone mask 12 and the semi-transparent portion 13 of 10, a positive type photoresist film 7 is exposed and developed, thereby covering the TFT channel and the source-drain portion electrode formation region and the data line forming region, and the channel portion is formed thinner than the source-drain region to form a first resist pattern region 7a (FIG. 5 (2)). 然后,把第1抗蚀图形7a作为掩模,蚀刻源极漏极用金属膜6以及第2、第1半导体膜5、4(图5(3))。 Then, the first resist pattern 7a as a mask, etching source-drain metal film 6 and the second, the first semiconductor film 5,4- (FIG. 5 (3)). 然后,利用氧气灰化(ashing)去除沟道部形成区域的薄抗蚀膜,形成第2抗蚀图形7b(图6(1))。 Then, the channel portion is removed by using an oxygen ashing (ashing) the resist forming a thin film in the region forming a second resist pattern 7b (FIG. 6 (a)). 之后,以第2抗蚀图形7b为掩模,蚀刻源极漏极用金属膜6,形成源极/漏极6a、6b,之后蚀刻第2半导体膜5(图6(2)),最后将残存的第2抗蚀图形7b剥离(图6(3))。 Thereafter, the second resist pattern as a mask 7b, the source-drain metal film 6 is etched to form a source / drain electrode 6a, 6b, after the etching the second semiconductor film 5 (FIG. 6 (2)), and finally the remaining second resist pattern 7b release (FIG. 6 (3)).

专利文献1 特开2000-111958号公报非专利文献1“月刊エフピ—デイ·インテリジエンス(FPDIntelligence)”,1999年5月,第31-35页以往曾提出利用上述灰调掩模将需要进行中间色彩曝光的部分形成半透过性中间色彩膜(半透光膜)的技术。 Patent Document 1 Laid-Open No. 2000-111958 Non-Patent Document 1 "magazine Ester fu ピ - by Du イ · イ nn Te ri ji Orient Co. su (FPDIntelligence)", May 1999, pp. 31-35 conventionally been proposed using the gray tone mask requires an intermediate color of the exposed portion is formed intermediate color technology semipermeable membrane (semipermeable film) is. 通过使用该中间色彩膜,减少中间色彩部分的曝光量,可以进行中间色彩曝光。 By using this intermediate color film, to reduce the exposure of the intermediate color portion, intermediate color may be exposed.

以往,中间色彩膜类型的灰调掩模是如下制造的。 Conventionally, the intermediate color of gray-tone mask film type is manufactured as follows. 此处,以图7所示的TFT基板的图形100为例进行说明。 Here, the pattern of the TFT substrate 100 shown in FIG. 7 as an example. 图形100由以下部分构成:由对应TFT基板的源极和漏极的图形101a、101b构成的遮光部101;由对应TFT基板的沟道部的图形构成的半透光部103;形成于这些图形周围的透光部102。 Pattern 100 consists of the following parts: a pattern corresponding to the source and drain of the TFT substrate 101a, 101b composed of a light-shielding portion 101; a semi-transparent portion pattern of the channel portion of the TFT substrate 103 corresponding to the configuration; pattern formed on these around the transparent portion 102.

首先,准备在透明基板上顺序形成半透光膜和遮光膜的掩模坯料,在该掩模坯料上形成抗蚀膜。 First, a mask blank forming the light shielding film and semitransparent film in order on a transparent substrate, forming a resist film on the mask blank. 然后,进行图形描绘及显影,由此在对应上述图形100的遮光部101和半透光部103的区域形成抗蚀图形。 Then, patterning and developing the drawing, whereby the pattern corresponding to the light shielding portion 100 of the resist pattern 101 is formed and the region of the semi-transparent portion 103. 然后,利用合适的方法进行蚀刻,去除对应未形成上述抗蚀图形的透光部102的区域的遮光膜和其下层的半透光膜,形成图8(1)所示的图形。 Then, using a suitable etching method, removing the non-transmissive portion corresponding to the resist pattern formed on the light-shielding film region 102 and the lower layer of a semitransparent film formed 8 (1) pattern shown in FIG. 即,形成透光部202,同时形成对应所述图形100的遮光部和半透光部的区域的遮光图形201。 That is, the light-transmitting portion 202 is formed, while forming a light-shielding pattern corresponding to the pattern of the light shielding region 100 and a portion of the semi-transparent portion 201. 在去除残留的抗蚀图形后,再次在基板上形成抗蚀膜,进行图形描绘及显影,此次在对应所述图形100的遮光部101的区域形成抗蚀图形。 After removal of the remaining resist pattern is again formed on the substrate the resist film, patterning and developing the drawing, the light-shielding portion 100 in a region 101 corresponding to the pattern of the resist pattern is formed. 然后,通过合适的蚀刻,仅去除未形成抗蚀图形的半透光部区域的遮光膜。 Then, by a suitable etching, removing the light-shielding film region is semi-transparent portion is not formed resist pattern only. 由此如图8(2)所示,形成对应所述图形100的图形。 Whereby 8 (2), 100 is formed corresponding to the pattern of the pattern. 即,形成由半透光膜的图形203得到的半透光部,同时形成遮光部的图形201a、201b。 I.e., semi-transparent portion is formed by a semitransparent film pattern 203 is obtained, the light shielding pattern portion are formed simultaneously 201a, 201b.

但是,利用这种以往的掩模制造方法,在第一次形成透光部的光刻工序和第二次形成半透光部的光刻工序,分别进行图形描绘,所以需要2倍的描绘时间,并且需要进行校准,以使第二次描绘与第一次描绘不产生图形偏移,但即使提高校准精度,实际上完全消除校准偏移是非常困难的。 However, with such a conventional mask manufacturing method, a photolithography step for forming the light-transmitting portion and a second photolithography step is formed in the first semi-transparent portion, respectively, graphic drawing, the drawing time needed twice , and need to be calibrated, so that the first and second drawing depicts a pattern shift is not generated, but even improve calibration accuracy, virtually completely offset calibration is very difficult to eliminate. 例如图9(a)所示,由于校准偏移致使半透光部的图形203在图示X方向形成偏移的情况下,使得对应TFT基板的源极/漏极的遮光部的面积与设计值不同,产生TFT特性发生变化的问题。 For example in FIG. 9 (a), since the offset of the calibration pattern 203 resulting in the case of semi-transparent portion formed offset in the illustrated X direction, so that the source of the TFT substrate corresponding to the source / drain area of ​​the light-shielding portion and Design different values, a problem TFT characteristics changes. 另外,如图9(b)所示,由于校准偏移致使半透光部的图形203在图示Y方向形成偏移的情况下,产生由于TFT基板的源极和漏极之间的短路造成的不良。 Further, FIG. 9 (b), since the offset calibration pattern 203 resulting in the case of semi-transparent portion formed in the illustrated Y direction shift is generated due to the short circuit between the source and the drain of the TFT substrate caused by bad. 无论如何,在这种以往的掩模制造方法中,在TFT上高精度地形成重要的沟道部分是特别困难的。 In any case, in such a conventional mask manufacturing method, accurately formed on the TFT channel portion is important particularly difficult.

另外,在描绘时,利用曝光量100%的光量描绘透光部后,利用曝光量约50%的光量描绘半透光部,由此可以一次完成描绘工序,这种方法公开于特开2002-189280号及特开2002-189281号公报中。 Further, when drawing, using 100% of the light quantity of exposure light transmitting portion by the drawing, by the light exposure amount of about 50% of the semi-transparent drawing portion, thereby to complete a drawing step, the method disclosed in Laid-Open 2002- No. 189,280 Laid-open No. 2002-189281 Gazette and.

即使根据该方法,描绘透光部用和半透光部用两种数据也需要花费两倍的描绘时间。 According to this method, even if, by drawing the light-transmitting portion and the semi-transparent portion in two drawing data also it takes twice the time. 虽然不会产生前面所述的伴随进行两次光刻工序而进行两次描绘工序时的校准偏移问题,但由于描绘两种数据,所以描绘自身需要进行两次,在描绘一次描绘区域后,需要再次从头描绘,因此不可避免由于所使用的描绘机自身的位置精度致使图形组合产生偏移。 Although not generated accompanying the aforementioned photolithography step is performed twice calibration offset problem when the two step drawing, but the two kinds of drawing data, the drawing itself requires two, after drawing a drawing area, drawing from scratch again, it is inevitable due to the rendering engine used by itself causes the positional accuracy of the combination pattern deviated. 因此,即使采用该方法,与前述方法相比,虽然偏移量的程度有差异,但不能解决图形偏移问题。 Thus, even with this method, compared to the aforementioned method, although there are differences in the degree of offset, but does not solve the problem of pattern shift.

发明内容 SUMMARY

本发明的目的是解决以往的图形偏移问题,提供一种可以制造高品质的TFT的灰调掩模的制造方法。 Object of the present invention is to solve the conventional problem of pattern shift, there is provided a method for producing a TFT can be manufactured of high-quality gray-tone mask.

为了解决上述课题,本发明至少具备以下构成。 In order to solve the above problems, the present invention includes at least the following configuration.

(构成1)一种具有遮光部、透光部和半透光部的灰调掩模的制造方法,其特征在于,具有下述工序:准备在透明基板上至少顺序形成半透光膜和遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度(解像限界)以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻遮光膜和半透光膜并形成透光部的工序;仅去除残留在所述半透光部上的抗蚀图形的工序;把在所述工序残留的抗蚀图形作为掩模,蚀刻遮光膜和半透光膜的层压膜的一部分并形成半透光部的工序。 (Structure 1) A method for manufacturing a gray-tone mask shielding portion, the light-transmitting portion and having a semi-transparent portion, which comprising the steps of: preparing a semipermeable film and light blocking sequence on a transparent substrate at least mask blank film step; mask blank is formed on the step of the resist film; a step of exposing the resist film, the process comprising: a semi-transparent portion formed in the portion of the resist film, the a resolution limit (bounded SR) of the following pattern exposure apparatus exposing the resist film after the pattern exposure embodiment; developing process of the resist film to form a light shielding part forming portion is formed of semi-transparent and different values ​​of the residual film portion of the resist pattern of a resist portion; said resist pattern as a mask, etching the light shielding film and the semitransparent film is formed, and a translucent portion; removing only the remaining a resist pattern on said semi-light transmitting portion; the step in said remaining part of the resist pattern as a mask film layer, etching the light shielding film and a step of forming a semitransparent film and semi-transparent portion.

(构成2)一种灰调掩模的制造方法,该灰调掩模是在薄膜晶体管基板的制造工序中使用的掩模,具有遮光部、透光部和半透光部,从所述遮光部形成对应所述薄膜晶体管基板的源极和漏极的图形,从所述半透光部形成对应沟道部的图形,其特征在于,具有下述工序:准备在透明基板上至少顺序形成半透光膜和遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻遮光膜和半透光膜并形成透光部的工序;仅去除残留在所述半透光部上 (Structure 2) The method for producing a gray tone mask, the gray-tone mask is a mask used in a manufacturing process of a thin film transistor substrate having a light shielding portion, and the semi-transparent portion of the light-transmitting portion from the light-shielding pattern portion is formed corresponding to the source and drain of the thin film transistor substrate, a pattern corresponding to the channel portion from said semi-transparent portion, which comprising the steps of: preparing sequentially formed on a transparent substrate at least a half the light-transmitting film shielding film and the mask blank of step; forming a resist film on the mask blank; a step of exposing the resist film, the process comprising: forming the semi-transparent film resist section portion, for graphical resolution limit of the exposure apparatus exposing the resist film following the pattern exposure embodiment; developing process of the resist film, is formed so that part of the light shielding portion is formed and a semi-transparent form different values ​​of the residual film portion of the resist pattern of a resist portion; said resist pattern as a mask, etching the light shielding film and the semitransparent film is formed, and a translucent portion; removing only the remaining semi-transparent portion of said upper 抗蚀图形的工序;把在所述工序残留的抗蚀图形作为掩模,蚀刻遮光膜和半透光膜的层压膜的一部分并形成半透光部的工序。 Step of the resist pattern; the step in said remaining part of the resist pattern as a mask film layer, etching the light shielding film and a step of forming a semitransparent film and semi-transparent portion.

(构成3)根据发明之一或发明之二所述的灰调掩模的制造方法,其特征在于,在所述掩模坯料的半透光膜和遮光膜之间,设置在通过蚀刻去除遮光膜时用于保护半透光膜的缓冲膜。 (Structure 3) The manufacturing method according to one of the two gray tone mask or disclosure of the invention, which is characterized in that, between the mask and the light-shielding film blank semipermeable membrane, is provided by etching the light shielding removed semipermeable film for protecting the film when the buffer film.

(构成4)一种具有遮光部、透光部和半透光部的灰调掩模的制造方法,其特征在于,具有下述工序:准备在透明基板上至少形成透过率具有膜厚依赖性的遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻已曝光的遮光膜并形成透光部的工序;仅去除残留在所述半透光部上的抗蚀图形的工序;把在所述工序残留的抗蚀图形作为掩模进行蚀刻以形成能够使已曝光的遮光膜获得规定的透过率的膜厚,并形成半透光部的工序。 (Structure 4) A method for manufacturing a gray-tone mask shielding portion, the light-transmitting portion and having a semi-transparent portion, which comprising the steps of: preparing a transmittance of at least having a film thickness dependency is formed on a transparent substrate, a step of mask blanks of the light shielding film; on the mask blank is formed in a resist film; a step of exposing the resist film, the process comprising: a semi-transparent portion formed in the resist film section, for graphical resolution limit of the exposure apparatus exposing the resist film according to the following pattern is exposed; developing process of the resist film to form a semi-light transmitting portion is formed so that part of the light shielding portion is formed and different values ​​of the residual resist film of a resist pattern moiety; and said resist pattern as a mask, etching the exposed portion of a translucent and light-shielding film is formed; removing remaining only in the semi-transparent a step on the resist pattern portion; the step of the remaining resist pattern as a mask is etched to form the light shielding film can be exposed to obtain a predetermined thickness of the transmittance, and the semi-transparent portion formed process.

根据构成1,本发明的灰调掩模的制造方法具有:使用在透明基板上至少顺序形成半透光膜和遮光膜的掩模坯料,对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行该抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把该抗蚀图形作为掩模,蚀刻遮光膜和半透光膜并形成透光部的工序;仅去除残留在半透光部上的抗蚀图形,把所残留的抗蚀图形作为掩模,蚀刻遮光膜和半透光膜的层压膜的一部分并形成半透光部的工序。 According to configuration 1, the gray-tone mask manufacturing method of the present invention includes: a transparent substrate using the mask blank is formed sequentially at least a semitransparent film and light-shielding film, a step of exposing the resist film, comprising the step of: in the forming part of said semi-transparent portion of the resist film pattern for exposing the resolution limit of an exposure apparatus a resist film following the pattern exposure embodiment; developing processing of the resist film to form a light-shielding formed and a portion of the value of residual film portion of the resist forming portion of the semi-transparent portion of the different steps of the resist pattern; to the resist pattern as a mask, and etching the light-shielding film and a semitransparent film formed of light-transmissive portion step; only removed remaining on the semi-transparent portion of the resist pattern, the resist pattern as the remaining part of the masking film layer, etching the light shielding film and the step of forming a semitransparent film and semi-transparent portion.

在本发明中,针对形成在掩模坯料上的例如正极型抗蚀膜,对形成半透光部的部分将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光,在形成半透光部的部分以比抗蚀剂被完全感光的曝光量少的曝光量进行曝光,所以进行显影处理时,形成抗蚀剂以薄的膜厚残留的状态。 In the present invention, for example, a positive type resist film is formed on the mask blank, is formed on the part of the semi-transparent portion pattern for the resolution limit of an exposure apparatus of the resist film following the pattern exposure embodiment exposure, when the semi-transparent portion is formed at a portion of the exposure amount than the resist is fully exposed photosensitive small amount of exposure, so a development process, a resist is formed in a thin state of residual film thickness. 即,能够获得与对形成半透光部的部分减少曝光量进行曝光时相同的作用。 That is, the same can be obtained when the decreased exposure semi-transparent portion forming portion exposed effect. 因此,例如,可以利用透光部的描绘数据和由用于对上述抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形构成的半透光部的描绘数据的合成数据进行一次描绘,通过显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形。 Thus, for example, using a light-transmitting portion and the drawing data to the drawing data synthesized data semi-transparent portion of the resolution limit of the resist film exposure apparatus of the embodiment of the pattern exposure pattern depicted by a configuration is used, by the developing treatment to form a light shielding portion forming portion and form different values ​​of the residual film portion of the resist is semi-transparent portion of the resist pattern. 然后,把该抗蚀图形作为掩模进行蚀刻并形成透光部,仅去除残留在半透光部上的抗蚀图形,把所残留的抗蚀图形作为掩模,蚀刻遮光膜并形成半透光部。 Then, the etching resist pattern as a mask to form the light-transmitting portion, the resist pattern is removed only on the remaining portion of the semi-transparent, to the remaining resist pattern as a mask, etching the light shielding film and forming a semi-permeable light portion.

这样,根据本发明,可以一次进行用于制造灰调掩模的描绘,所以能够防止由于以往的第二次光刻工序的描绘时的校准偏移、或改变曝光量分别连续描绘两种描绘图形时由于描绘机的位置精度的偏移等的影响造成的品质恶化。 Thus, according to the present invention, can be depicted for the manufacture of a gray-tone mask, it is possible to prevent the calibration offset when drawing the second conventional photolithography step, changing the exposure amounts of the two or separately and continuously drawing a graph depicting drawing quality degradation due to the influence of the positional accuracy of the displacement machine and the like caused. 因此,可以充分确保掩模的品质,特别适合制造遮光部和半透光部的位置精度或大小、尺寸等的图形精度要求高的灰调掩模。 Thus, the mask can be sufficiently ensure the quality, particularly suitable for producing high light shielding portions and light transmitting portions of the half size or position accuracy, pattern size and the like of the gray-tone mask accuracy. 例如,特别适合制造TFT基板用灰调掩模的制造。 For example, particularly suitable for producing the TFT substrate for manufacturing a gray tone mask. 并且,由于可以一次进行描绘,所以利用以往进行两次描绘时的一半时间即可完成描绘,相应地能够缩短掩模制造所需要的时间。 Further, since drawing can be carried out once, so the use of the conventional half the time drawing is performed twice to complete the drawing, accordingly possible to shorten the time required for manufacturing the mask.

根据构成2,本发明的可以高品质地制造在TFT基板的制造工序中使用的灰调掩模,该灰调掩模从遮光部形成与TFT基板的源极和漏极对应的图形,从半透光部形成与源极和漏极之间的沟道部对应的图形。 According to configuration 2, the present invention can be manufactured with high quality gray tone mask used in a manufacturing process of the TFT substrate, source and drain of the TFT substrate corresponding to the pattern of the gray-tone mask is formed from a light-shielding portion, from the half light transmitting portion is formed with the channel portion between the source and drain of the corresponding graphic. 为了确保高品质的TFT特性,源极和漏极之间的沟道部的图形精度特别重要。 In order to ensure a high quality TFT characteristics, pattern accuracy of the channel portion between the source and the drain is particularly important. 根据本发明的方法,对应源极和漏极的遮光部及对应该源极和漏极之间的沟道部的半透光部,可以通过一次描绘一起形成,其位置精度可以用一次描绘精度来保证。 The method according to the present invention, corresponding to the source and drain of the source light-shielding portions and a semi-transparent portion of the channel should be between the portion and the drain electrode can be formed together by a single drawing, which depicts a positional accuracy can be precision to be guaranteed. 因此,能够防止因以往描绘时的校准偏移等的影响造成的品质恶化,能够充分确保图形精度要求高的TFT基板制造用灰调掩模的品质。 Accordingly, it is possible to prevent the quality deterioration due to the influence of the calibration offset, etc. caused when the conventional drawing, can be sufficiently secured for producing a high-quality gray-tone mask pattern precision of the TFT substrate.

根据构成3,在上述掩模坯料的半透光膜和遮光膜之间,设置具有在通过蚀刻去除遮光膜时用于保护半透光膜的所谓蚀刻挡块的功能的缓冲膜,所以在通过蚀刻去除形成半透光部的部分的遮光膜时,能够防止下层的半透光膜的膜减少等损伤。 According to configuration 3, between the shielding film and the semitransparent film of the mask blank, a film having a buffer function for the light-shielding film is removed by etching, a so-called protective film semipermeable etching stopper, so by forming a light shielding film is etched away portions of the semi-transparent portion, the lower film can be prevented semipermeable membrane damage such as reduced. 另外,为了在成为半透光部的区域不破坏下层的半透光膜的透过率,通常希望去除缓冲膜,但是根据缓冲膜的材质,如果透明性高,即使不去除也不妨碍半透光部的透过性的情况下,可以保留缓冲膜。 Further, in order not to destroy the permeability of the semipermeable film of the lower layer becomes semi-transparent portion in the region, the film is often desirable to remove the buffer, but the buffer film depending on the material, if high transparency, without removing the semipermeable not prevent the light transmission portion of the case, the buffer film can be retained.

根据构成4,本发明中使用的掩模坯料,其设在透明基板上的遮光膜基本具有遮光性,可以利用透过率特性因其膜厚而不同的材质来制造。 According to configuration 4, a mask blank for use in the present invention, which is provided on a transparent substrate, a light-blocking base light-shielding film, the transmittance characteristic can be used for its film thickness and different materials to manufacture. 即,在透明基板上以透过率大致为0%的膜厚来形成遮光膜时,在形成半透光部的区域通过半蚀刻来减薄遮光膜的膜厚,可以获得半透光部所需要的大致50%的透过率。 That is, when the transmittance of the transparent substrate to a thickness of approximately 0% to form a light shielding film is formed in a region of the semi-transparent portion of the film thickness of the shading thinned by half-etching, semi-transparent portion can be obtained require roughly 50% transmittance. 根据本发明,和前述发明之一相同,能够获得图形精度高的灰调掩模,并且具有所使用的掩模坯料的层结构简单、容易制造的优点。 According to the present invention, one and the same as the foregoing invention can be obtained with high accuracy gray tone mask pattern and mask blank having a simple layer structure is used, the advantages of easy to manufacture.

附图说明 BRIEF DESCRIPTION

图1是按工序顺序表示本发明的第一实施方式的制造方法的概略剖面图。 FIG 1 is a schematic sectional view showing a sequence of steps showing a manufacturing method of the first embodiment of the present invention.

图2是表示包括半透光部曝光用细微图形的描绘图形的一例图。 FIG 2 is a diagram of an example graph depicting semi-transparent portion includes exposure of a fine pattern.

图3是按工序顺序表示本发明的第二实施方式的制造方法的概略剖面图。 3 is a schematic sectional view showing the manufacturing method of the present invention the order of steps according to the second embodiment.

图4是按工序顺序表示本发明的第三实施方式的制造方法的概略剖面图。 FIG 4 is a schematic sectional view showing a sequence of steps showing a manufacturing method of a third embodiment of the present invention, FIG.

图5是表示使用灰调掩模的TFT基板的制造工序的概略剖面图。 FIG 5 is a schematic sectional view showing a manufacturing process of a TFT substrate using a gray tone mask.

图6是表示使用灰调掩模的TFT基板的制造工序(图5的制造工序的延续)的概略剖面图。 FIG 6 is a schematic sectional view showing a manufacturing process of the gray-tone mask using a TFT substrate (a continuation of the manufacturing process of FIG. 5) of the.

图7是表示TFT基板制造用掩模图形的一例图。 FIG 7 is a diagram of an example of a mask pattern for producing a TFT substrate.

图8是说明以往的灰调掩模的制造方法的概略平面图。 FIG 8 is a schematic plan view of a conventional method of manufacturing a gray-tone mask.

图9是说明用以往的制造方法制造的灰调掩模的问题的概略平面图。 FIG 9 is a schematic plan view of a gray-tone mask the problem with the conventional production method.

符号说明10灰调掩模;21透明基板;22半透光膜;23遮光膜;24抗蚀膜;25缓冲膜;100TFT基板用图形;101遮光部;102透光部;103半透光部。 REFERENCE SIGNS LIST 10 gray-tone mask; 21 a transparent substrate; a semitransparent film 22; light-shielding film 23; 24 resist film; buffer film 25; 100TFT substrate pattern; shielding portion 101; light transmitting portion 102; semi-transparent portion 103 .

具体实施方式 Detailed ways

以下,详细说明本发明的实施方式。 Hereinafter, detailed embodiments of the present invention.

图1是表示本发明的灰调掩模的制造方法的第一实施方式,是按工序顺序表示其制造工序的概略剖面图。 FIG 1 shows a first embodiment of a method of manufacturing a gray-tone mask of the present invention, the order of process steps is a schematic cross-sectional view of the manufacturing process.

在本实施方式使用的掩模坯料如图1(a)所示,在石英等透明基板21上顺序形成半透光膜22和遮光膜23。 In the present embodiment uses a mask blank in FIG. 1 (a), the semitransparent film is formed on the transparent substrate 21 sequentially quartz 22 and the light-shielding film 23. 此处,作为遮光膜23的材质,优选薄膜且能获得高遮光性的材质,例如可以列举Cr、Si、W、Al等。 Here, as the material, the light-shielding thin film 23 is preferably capable of obtaining high light-shielding material, for example, include Cr, Si, W, Al and the like. 另外,作为半透光膜22的材质,优选薄膜且在使遮光部的透过率为0%时能获得透过率约50%的半透过性的材质,例如可以列举Cr化合物(Cr的氧化物、氮化物、氧氮化物、氟化物等)、MoSi、Si、W、Al等。 Further, as a semitransparent film 22 of a material, preferably a thin film and the transmittance in the light-shielding portion can be obtained as a semi-permeable material of about 50% transmittance of 0%, for example, may include a Cr compound (a Cr oxides, nitrides, oxynitrides, fluorides, etc.), MoSi, Si, W, Al and the like. Si、W、Al等是根据其膜厚能获得高的遮光性或能获得半透过性的材质。 Si, W, Al, etc. The thickness thereof is to achieve high light-shielding material can be obtained or semi-permeable. 另外,所形成的掩模的遮光部是半透光膜22和遮光膜23的层压膜,所以即使仅依靠遮光膜而遮光性不足时,在与半透光膜组合能获得遮光性即可。 Further, the light blocking mask portion is formed by a semitransparent film 22 and the film layer 23 of the light shielding film, so that even when the light shielding film shielding rely only insufficient, in combination with a semipermeable film can be obtained the light shielding property can be . 另外,此处所说的透过率是相对使用灰调掩模的例如大型LCD用曝光机的曝光光线的波长的透过率。 Further, the transmittance referred to herein is relative to the use of gray-tone mask, for example, large LCD with a wavelength of exposure light transmittance of the exposure machine. 并且,半透光膜的透过率完全没有必要限定在50%左右。 Further, the semitransparent film is not necessarily limited to full transmittance of about 50%. 半透光部的透过性设定在什么程度是设计上的问题。 Through the semi-transparent portion of the set to what extent a matter of design.

另外,关于上述遮光膜23和半透光膜22的材质组合,优选膜彼此的蚀刻特性不同,在一方膜的蚀刻环境下,另一方膜具有耐性。 Further, regarding the material of the light shielding film 23 and the combination of the semitransparent film 22, the film is preferably etching characteristics different from each other, in the environment of one film is etched, and the other film has resistance. 例如,在用Cr形成遮光膜23、用MoSi形成半透光膜22的情况下,使用氯系列气体干式蚀刻Cr遮光膜,在与基底的MoSi半透光膜之间能够获得较高的蚀刻选择比,所以能够通过蚀刻仅去除Cr遮光膜,而几乎不会给MoSi半透光膜带来损伤。 For example, the light-shielding film 23 is formed by Cr, MoSi case of forming a semitransparent film 22, the use of chlorine gas dry etching series Cr light-shielding film between a substrate and a semitransparent film of MoSi possible to obtain high etch selectivity, the Cr light-shielding film can be removed only by etching with almost no damage caused to the MoSi semitransparent film. 并且,上述遮光膜23和半透光膜22优选在基板上成膜时的紧密粘接性良好。 And the light shielding film 23 and the transflective film 22 is preferably in good close adhesion on the substrate during film formation.

上述掩模坯料可以通过在透明基板21上顺序成膜半透光膜22和遮光膜23来获得,但成膜方法可以适当选择蒸镀法、溅射法、CVD(化学气相沉积)法等与膜种类相适合的方法。 The mask blank on a transparent substrate 21 by sequentially forming a semitransparent film 22 and the light-shielding film 23 is obtained, but the vapor deposition method may be appropriately selected, sputtering, CVD (chemical vapor deposition) method or the like and film type phase suitable method. 并且,关于膜厚没有特别制约,总之要用最佳的膜厚来形成,以便能够获得良好的遮光性或半透光性。 Further, the film thickness is not particularly restricted, use short optimum film thickness is formed so as to be able to obtain good light-shielding or semi-translucent.

下面,说明使用该掩模坯料的灰调掩模的制造工序。 Next, using the mask blank manufacturing process of the gray-tone mask.

首先,在该掩模上涂覆例如电子束用正极型抗蚀剂,进行干燥,形成抗蚀膜24。 First, on the mask is coated with an electron beam, for example, a positive type resist, and dried to form a resist film 24.

然后,使用电子束描绘机或激光描绘机等进行描绘。 Then, using an electron beam drawing machine or a laser drawing machine for drawing. 描绘图形例如图2所示一例,具有遮光部31a、31b、透光部32和半透光部(灰调部)33。 FIG 2 depicts a graphical example, shows an example having a light-shielding portion 31a, 31b, the light-transmitting portion 32 and semi-transparent portion (gray tone portion) 33. 此处,半透光部33是形成由所使用的描绘机的分辨率限度以下的细微图形(线和空间)构成的遮光图形33a的区域。 Here, the semi-transparent portion 33 is the resolution limit is formed by a drawing machine used in the fine pattern (line and space) pattern the light shielding region 33a is composed of. 在对应前述图7所示的TFT基板用图形的情况下,对应源极和漏极的图形利用遮光部31a、31b形成,对应沟道部的图形利用半透光部33形成。 In the FIG. 7 corresponds to the case where the TFT substrate in a pattern corresponding to the source and drain of the light-shielding portion pattern 31a, 31b are formed, corresponding to the pattern of the channel portion 33 is formed by the semi-light transmitting portion. 例如,激光描绘机的分辨率限度一般约是2.0μm。 For example, the resolution limit of laser drawing machine is generally about 2.0μm. 因此,例如,在图2中把半透光部33的透过部33b的空间宽度设为不足2.0μm,把遮光图形33a的线宽度设为描绘机的分辨限度以下且不足2.0μm。 Thus, for example, in FIG. 2 through the space portion 33b of the semi-transmissive portion 33 is set to a width of less than 2.0 m, the line width of the light blocking pattern 33a is set to the resolution limit of the drawing machine and less than 2.0μm. 另外,在线和空间图形的情况下,通过设定线宽度,可以调节通过该图形进行曝光时的曝光量,最终可以控制形成半透光部的部分的抗蚀剂的残留膜的值。 Further, in the case of the line and space pattern, by setting the line width, the exposure amount may be adjusted when the pattern is exposed by, ultimately control the formation of the value of the residual film portion of the resist is semi-transparent portion. 在本发明中,特别优选线宽度约为描绘机的解像(解像)最小线宽的1/2~1/3。 In the present invention, particularly preferably about drawing the line width resolution machine (SR) minimum line width of 1/2 to 1/3.

使用这种具有遮光部31a、31b、透光部32和半透光部(灰调部)33的图形的描绘数据(图2所示图形时,例如优选利用将透光部32的数据和半透光部33的数据合成的一种数据),进行一次描绘。 , 31b when the drawing data of the light transmitting pattern portion 32 and the semi-transparent portion (gray tone portion) 33 (graph shown in FIG. 2, for example, preferably using the data using such a light-blocking portion 31a, semi-light transmitting portion 32 and the a data portion 33 of the light transmitting the data synthesis), drawing once. 此时的曝光量是形成透光部的区域的抗蚀剂能够充分感光的曝光量。 At this time, the exposure amount of exposure of the resist is formed of the light transmitting region can be sufficiently photosensitive portion. 这样,形成为在形成透光部的区域(图1所示的C区域),抗蚀剂充分感光,在形成遮光部的区域(图1所示的B区域),抗蚀剂未曝光(不能曝光)的状态。 Thus, as formed in region (C region in FIG. 1) of the light transmitting portion is formed, the photosensitive resist sufficiently, in the region (B region in FIG. 1) formed in the light shielding portion, the unexposed resist (not exposure) state. 并且,在形成半透光部的区域(图1所示的A区域),由于不能利用描绘机解像所述遮光图形33a,所以不能描绘其线宽,整体上曝光量不足。 And, in the region (A region in FIG. 1) forms a semi-light transmitting portion, since the resolution of the rendering engine can not use the light blocking pattern 33a, it is not drawing line width, the overall amount of underexposure. 即,能够获得与在半透光部减少曝光量来曝光抗蚀剂时相同的效果。 That is, the same effect can be obtained with reduced exposure to the semi-transparent portion exposing the resist.

在描绘后,使用规定的显影液将其显影,在掩模坯料上形成遮光部(B区域)和半透光部(A区域)的抗蚀剂的残留膜的值不同的抗蚀图形24a(参照图1(b))。 After the drawing, using a predetermined developing solution to be developed to form a mask blank on different values ​​resist pattern 24a remaining portion of the light shielding film (B region) and a semi-transparent portion (A region) resist ( Referring to FIG. 1 (b)). 由于在半透光部抗蚀剂少于被完全感光的曝光量,所以在显影时未能完全溶解,而以比未曝光的遮光部的抗蚀剂薄的膜厚残留下来。 Since the amount of exposure is less than in fully semi-transparent portion of the photosensitive resist, it is not completely dissolved during development, and to the light shielding portion thinner than the resist unexposed film thickness remained. 另外,在透光部形成抗蚀剂被完全去除的状态。 Further, the state of the resist is completely removed is formed in the light transmitting portion.

然后,把所形成的抗蚀图形24a作为掩模,例如利用干式蚀刻去除露出于透光部(C区域)的遮光膜23和半透光膜22,形成透光部(参照图1(c))。 Then, the resist pattern 24a as a mask is formed, for example, is removed by dry etching to expose the translucent portion (C region) of the light-shielding film 23 and the transflective film 22, the light-transmitting portion is formed (see FIG. 1 (c )). 在遮光膜23或半透光膜22由Cr系列材料构成的情况下,可以采用使用氯气体的干式蚀刻。 23 or 22 in the case where a semitransparent film composed of Cr-based material under light shielding film may be used dry etching using a chlorine gas.

然后,利用氧气灰化等完全去除以薄膜厚残留的半透光部(A区域)(参照图1(d))。 Then, using oxygen ashing or the like is completely removed in a semi-transparent portion (A region) (see FIG. 1 (d)) of the residual film thickness. 此时,遮光部(B区域)的抗蚀剂也被同时去除,成为最初的大约一半的膜厚。 In this case, the light shielding portion (B region) of the resist is also removed at the same time, the film thickness of about half of the original.

然后,把残留的抗蚀图形24a作为掩模,例如利用干式蚀刻去除露出于半透光部(A区域)的遮光膜23a,形成半透光部(参照图1(e))。 Then, the remaining resist pattern 24a as a mask, for example, by dry etching the light shielding film 23a is removed to expose the semi-transparent portion (A region), the semi-transparent portion is formed (see FIG. 1 (e)). 此处,在遮光膜23和半透光膜22由彼此蚀刻特性不同的材质形成的情况下,在蚀刻遮光膜的环境下,半透光膜几乎不被蚀刻,所以能够避免半透光膜的膜厚减少。 Here, in a case where the light-shielding film 23 and the transflective film 22 by the etching characteristics different from each other is formed of a material, the light-shielding film in the etching environment, a semitransparent film is hardly etched, the film can be avoided semipermeable film thickness reduction. 这样,虽然希望半透光部的遮光膜基本被完全去除,但在遮光膜23和半透光膜的蚀刻特性比较接近的情况下,即使在遮光膜的蚀刻残渣有少量残余的状态或蚀刻过度进行致使半透光膜的一部分被去除的状态下,只要不影响所得到的半透光部的透过特性就不会成为问题。 Thus, although it is desirable semi-transparent portion of the light shielding film is substantially completely removed, but in the case where the light-shielding film 23 of semitransparent film and etching characteristics relatively close, even if the etching residue in a small amount of residual light-shielding film or etching over state a state of being removed so that a portion of the semitransparent film, they do not affect the transmission characteristics of the semi-transparent portion of the obtained will not be a problem. 另外,最后使用氧气灰化等去除残留的抗蚀图形。 Further, the resist pattern to remove residual oxygen ashing last used.

由此,获得本实施方式的灰调掩模。 Thus, the present embodiment is obtained gray-tone mask. 所得到的掩模利用遮光膜的图形23b形成遮光部(B区域),利用半透光膜图形22a形成半透光部(A区域),并且在其周边露出透明基板21,形成透光部(C区域)。 The resulting mask pattern using a light shielding film formed of light-shielding portion 23b (B region), semi-transparent portion 22a is formed (A region) using a semitransparent film pattern, and the transparent substrate 21 is exposed at the periphery thereof, forming the translucent portion ( C area). 根据本发明的方法,可以一次进行图形描绘,不会产生因以往的图形组合造成的偏移,能够高精度地形成重要的图形,所以可以获得高品质的灰调掩模。 The method according to the present invention, a graphic can be depicted by a conventional offset does not occur due to a combination pattern can be precisely formed pattern is important, it is possible to obtain high-quality gray-tone mask. 本发明非常适合制造对图形精度要求特别高的TFT基板制造用灰调掩模。 The present invention is well suited for producing graphics particularly high precision manufacturing the TFT substrate of gray-tone mask.

另外,在上述实施方式中,用于形成半透光部的图形没必要限定于类似图2的遮光图形33a那样的线和空间的图形。 Further, in the above-described embodiment, for forming a semi-transparent portion pattern need not be limited to the light shielding pattern similar to Figure 2 as line and space pattern of 33a. 总之,例如通过导入描绘机的分辨率限度以下的图形并进行描绘,可以减少对形成半透光部的部分的抗蚀剂的曝光量并控制抗蚀剂的残留膜的值即可,所以图形形状没有特别限定。 In short, for example, by introducing the resolution limit drawing machine and drawing the pattern, the residual film may be reduced to the value of the exposure amount of the resist forming portion of the semi-transparent portion and the control resist, the pattern shape is not particularly limited. 因此,除线和空间的图形以外,例如也可以是虚线、点(dot)、两种不同颜色的方格图案等图形。 Thus, in addition to the line and space pattern, for example, may be dotted, (DOT), a checkered pattern of two different colors like pattern.

图3是表示本发明的灰调掩模的制造方法的第二实施方式,是按工序顺序表示其制造工序的概略剖面图。 FIG. 3 shows a second embodiment of the method of manufacturing a gray-tone mask of the present invention, the order of process steps is a schematic cross-sectional view of the manufacturing process.

在本实施方式使用的掩模坯料如图3(a)所示,在透明基板21上顺序形成半透光膜22、缓冲膜25和遮光膜23。 In the present embodiment uses a mask blank in FIG. 3 (a), the semitransparent film sequentially formed on the transparent substrate 2122, a buffer film 25 and the light-shielding film 23. 即,在半透光膜22和遮光膜23之间,设置具有作为蚀刻挡块的功能的缓冲膜25,所以在通过蚀刻去除形成半透光部的区域的遮光膜时,能够可靠防止下层的半透光膜的膜厚减少等损伤。 I.e., between the semitransparent film 22 and the light-shielding film 23, a buffer film functions as an etching stopper 25, so that upon removal of the light-shielding film region is formed semi-transparent portion by etching, the lower layer can be reliably prevented and reduction of the thickness of a semitransparent film of damage. 这样,由于设有缓冲膜,遮光膜23和半透光膜22可以利用蚀刻特性相似的材质、例如同一材料的膜或主成分相同的材料的膜等构成。 Thus, since the buffer film, the light-shielding film 23 and the transflective film 22 may be etched using a similar characteristic material, such as film, the same film the main component of the same material or a material constituting. 另外,缓冲膜的材质从对蚀刻遮光膜23的环境具有耐性的材质中选择。 Further, the buffer film material selected from a material having resistance to environmental etching the light-shielding film 23. 并且,在需要去除半透光部的缓冲膜的情况下,也要求是利用干式蚀刻等方法可以去除并且不会给基底的半透光膜22带来损伤的材质。 Further, in the case where the semi-transparent film is required to remove the buffer portion, and also requires the use of a dry etching method such as a semitransparent film may be removed and the substrate 22 is not brought to the material damage. 作为缓冲膜,例如可以使用SiO2或SOG(Spin On Glass)等。 As the buffer film, or SiO2 may be used, for example, SOG (Spin On Glass) and the like. 在用Cr系列材料构成遮光膜的情况下,这些材质在与遮光膜之间可以获得较高的蚀刻选择比。 In the case where the light-shielding film with a Cr-based material, the material between the light-shielding film can be obtained with high etch selectivity. 并且,这些材质的透过性良好,即使隔着半透光部,由于不妨碍其透过特性,所以可以不必去除。 And, good permeability of these materials, even across the semi-transparent portion, because they do not interfere with their transmission characteristics, it may not necessarily be removed.

使用这种掩模坯料制造灰调掩模的方法和前述第一实施方式相同。 The method of using such a mask blank for producing gray-tone mask and the first embodiment.

即,首先,在掩模坯料上形成抗蚀膜24,使用电子束描绘机或激光描绘机等进行描绘。 That is, first, a resist film is formed on the mask blank 24, using an electron beam drawing machine or a laser drawing machine for drawing. 描绘图形例如前述图2所示,具有遮光部31a、31b、透光部32和半透光部(灰调部)33,半透光部33是形成所使用的描绘机的分辨率限度以下的细微图形的图形,使用将这些图形合成的一种描绘数据进行一次描绘。 For example the resolution limit of the drawing pattern shown in FIG. 2, having a light-shielding portion 31a, 31b, the light-transmitting portion 32 and semi-transparent portion (gray tone portion) 33, 33 is a semi-transparent portion formed drawing machine used in the following fine pattern graphics, these graphics synthesized using a drawing data once drawing.

在描绘后,使用规定的显影液将其显影,在掩模坯料上形成遮光部(B区域)和半透光部(A区域)的抗蚀剂的残留膜的值不同的抗蚀图形24a(参照图3(b))。 After the drawing, using a predetermined developing solution to be developed to form a mask blank on different values ​​resist pattern 24a remaining portion of the light shielding film (B region) and a semi-transparent portion (A region) resist ( Referring to FIG. 3 (b)). 由于在半透光部抗蚀剂少于被完全感光的曝光量,所以在显影时未能完全溶解,而以比未曝光的遮光部的抗蚀剂薄的膜厚残留下来。 Since the amount of exposure is less than in fully semi-transparent portion of the photosensitive resist, it is not completely dissolved during development, and to the light shielding portion thinner than the resist unexposed film thickness remained.

然后,把所形成的抗蚀图形24a作为掩模,例如利用干式蚀刻去除露出于透光部(C区域)的遮光膜23、缓冲膜25和半透光膜22,形成透光部(参照图3(c))。 Then, the resist pattern 24a as a mask is formed, for example, is removed by dry etching to expose the translucent portion (C region) of the light-shielding film 23, the buffer film 25 and the transflective film 22, the light-transmitting portion is formed (see FIG. 3 (c)).

然后,利用氧气灰化等完全去除以薄膜厚残留的半透光部(A区域)的抗蚀剂(参照图3(d))。 Then, using oxygen ashing or the like is completely removed in a semi-transparent portion (A region) remaining resist film thickness (see FIG. 3 (d)).

然后,把残留的抗蚀图形24a作为掩模,例如利用干式蚀刻去除露出于半透光部(A区域)的遮光膜23a和缓冲膜25,形成半透光部(参照图3(e))。 Then, the remaining resist pattern 24a as a mask, for example, be removed by dry etching to expose the semi-transparent portion (A region) of the light-shielding film 23a and the buffer film 25 is formed semi-transparent portion (see FIG. 3 (e) ). 并且,由于设有缓冲膜25,所以此处的半透光膜的膜厚几乎不会减少。 And, since the buffer film 25, the film thickness of the semipermeable herein is hardly reduced. 使用氧气灰化等去除残留的抗蚀图形。 Oxygen ashing the remaining resist pattern is removed.

由此,如图3(e)所示,可以获得分别以较高的图形精度形成由遮光膜图形23b构成的遮光部、由半透光膜图形22a构成的半透光部、以及透光部的本实施方式的灰调掩模。 Accordingly, FIG. 3 (e) as shown, respectively, can be obtained with high accuracy pattern forming the light-shielding portion made of a light shielding film pattern 23b, a semi-transparent portion formed of a semitransparent film pattern 22a, and a transparent portion gray tone mask of the present embodiment.

另外,在本实施方式中,在形成上述的抗蚀图形24a后,可以(1)去除透光部的遮光膜23和缓冲膜25,(2)去除半透光部的抗蚀剂,(3)然后同时进行半透光部的遮光膜的蚀刻和透光部的半透光膜的蚀刻,(4)最后去除半透光部的缓冲膜。 Further, in the present embodiment, the above-described resist pattern is formed in the rear 24a, it may be (1) removing the light shielding film and the light transmitting portion 23 buffer film 25, (2) removing the semi-transparent portion of the resist, (3 ) then simultaneously etching a semitransparent film and etching the light-transmitting portion of the semi-transparent portion of the light shielding film, and (4) finally removing the semi-transparent portion of the buffer film. 另外,该情况时,也可以同时进行(1)的缓冲膜25的去除和(2)的抗蚀剂的去除。 Further, In this case, it may be performed simultaneously (1) removal of the buffer film 25 is removed and (2) resist. 根据这种制造工序,整体上可以省略1~2个工序。 According to such a manufacturing process, the whole can be omitted the step 1-2.

图4是表示本发明的灰调掩模的制造方法的第三实施方式,是按工序顺序表示其制造工序的概略剖面图。 FIG 4 is a third embodiment of the method of manufacturing a gray-tone mask of the present invention, the order of process steps is a schematic cross-sectional view of the manufacturing process.

在本实施方式使用的掩模坯料如图4(a)所示,在透明基板21上形成遮光膜23。 Mask blank used in the present embodiment shown in FIG 4 (a), the light-shielding film 23 is formed on a transparent substrate 21. 这样,利用蚀刻使遮光膜的膜厚部分不同,把膜厚较厚的部分作为遮光部,把膜厚较薄的部分作为半透光部。 Thus, the film thickness of the different portions of the light shielding film by etching, the thickness of the light-shielding portion as a thicker portion, the thinner the thickness of a portion of semi-transparent portion. 该情况时的遮光膜23的材质没有特别制约,但是为了得到较高的遮光性而采用能够获得透过率大致0%的膜厚较薄的材质,对其进行部分半蚀刻来形成半透光部将非常困难。 23 when the light-shielding film material in this case is not particularly restricted, but in order to obtain high light-shielding property can be obtained with film thickness of 0% transmittance substantially thinner material, wherein it is partially etched to form a semi-transmissive semi- section will be very difficult. 并且,为了得到不怎么高的遮光性而采用能够获得透过率大致0%的膜厚较厚的材质,虽然半蚀刻变得比较容易,但是由于遮光部的图形高度厚,有可能恶化图形形状或图形精度。 Further, in order to obtain very high light blocking effect can be obtained with film thickness of 0% transmittance of substantially thicker material, although the half etching becomes easier, but due to the light shielding pattern portion height thick, the pattern shape may deteriorate or graphic precision. 因此,在本实施方式中,遮光膜23优选选择在约1000~2000的膜厚范围内能够获得良好的遮光性和半透过性的材质。 Accordingly, in the present embodiment, the light-shielding film 23 is preferably selected within the thickness range of from about 1000 ~ 2000 possible to obtain good light-shielding material and a semi-permeable properties.

使用这种掩模坯料制造灰调掩模的方法和前述的第一实施方式相同。 Same as the first embodiment of the method and the use of such a mask blank for producing gray tone mask.

即,首先,在掩模坯料上形成抗蚀膜24,使用电子束描绘机或激光描绘机等进行描绘。 That is, first, a resist film is formed on the mask blank 24, using an electron beam drawing machine or a laser drawing machine for drawing. 描绘图形和前述实施方式相同,具有遮光部、透光部和半透光部(灰调部),半透光部是形成所使用的描绘机的分辨率限度以下的细微图形的图形,使用将这些图形合成的一种描绘数据进行一次描绘。 Graphics depicting the same embodiment and the foregoing embodiment, the light shielding portion having a light-transmitting portion and the semi-transparent portion (gray tone portion), a semi-transparent portion pattern resolution limit drawing machine used for the fine pattern formation using the synthesis of these graphics drawing data once a drawing.

在描绘后,使用规定的显影液将其显影,在掩模坯料上形成遮光部(B区域)和半透光部(A区域)的抗蚀剂的残留膜的值不同的抗蚀图形24a(参照图4(b))。 After the drawing, using a predetermined developing solution to be developed to form a mask blank on different values ​​resist pattern 24a remaining portion of the light shielding film (B region) and a semi-transparent portion (A region) resist ( Referring to FIG. 4 (b)). 由于在半透光部抗蚀剂少于被完全感光的曝光量,所以在显影时未能完全溶解,而以比未曝光的遮光部的抗蚀剂薄的膜厚残留下来。 Since the amount of exposure is less than in fully semi-transparent portion of the photosensitive resist, it is not completely dissolved during development, and to the light shielding portion thinner than the resist unexposed film thickness remained.

然后,把所形成的抗蚀图形24a作为掩模,例如利用干式蚀刻去除露出于透光部(C区域)的遮光膜23,形成透光部(参照图4(c))。 Then, the resist pattern 24a as a mask is formed, for example, is removed by dry etching to expose the translucent portion (C region) of the light-shielding film 23, the light-transmitting portion is formed (see FIG. 4 (c)).

然后,利用氧气灰化等完全去除以薄膜厚残留的半透光部(A区域)的抗蚀剂(参照图4(d))。 Then, using oxygen ashing or the like is completely removed in a semi-transparent portion (A region) remaining resist film thickness (see FIG. 4 (d)).

然后,把残留的抗蚀图形24a作为掩模,进行半蚀刻直到成为使露出于半透光部(A区域)的遮光膜23a能够获得半透光性的合适厚度,形成半透光部(参照图4(e))。 Then, the remaining resist pattern 24a as a mask, until a half etching so that the light shielding film 23a is exposed to the semi-transparent portion (A region) to obtain a suitable thickness of the semi-transparent, semi-transparent portion is formed (see FIG. 4 (e)).

由此,如图4(e)所示,可以获得分别以较高的图形精度形成由较厚的遮光膜图形构成的遮光部、由通过半蚀刻得到的较薄的遮光膜图形构成的半透光部、以及透光部的本实施方式的灰调掩模。 Thus, in FIG. 4 (e) as shown, respectively, can be obtained with high accuracy pattern forming the light-shielding portion made of a thick light shielding film pattern, constituted by a semipermeable thin by half-etching the light shielding film pattern obtained the light unit, and a gray-tone mask of the present embodiment is a light-transmitting portion.

另外,在以上实施方式中,说明了全部使用正极型抗蚀剂的情况,但也可以使用负极型抗蚀剂。 Further, in the above embodiment, the case where all of the positive type resist is used, it is also possible to use a negative type resist. 该情况时,为了在透光部做到未曝光,使用将遮光部的数据和半透光部的数据合成的描绘数据进行描绘。 In this case, in order to achieve an unexposed light-transmitting portion, the drawing data using the light shielding unit and the data portion of the semi-transparent synthetic depicted. 在描绘后进行显影,和以上实施方式相同,在掩模坯料上形成在遮光部和半透光部的抗蚀剂的残留膜的值不同的抗蚀图形。 Developed, and in the same manner as the above embodiment depicted, the value of the residual film is formed in the resist and the light shielding portion of the semi-transparent portion of the resist pattern on different mask blank. 在半透光部由于抗蚀剂少于完全被感光的曝光量,所以形成为固化不充分的状态,进行显影时,以比完全被感光固化的遮光部的抗蚀剂薄的膜厚残留下来。 When semi-transparent portion is less than the amount of exposure because the resist of the photosensitive completely, so the formation of insufficiently cured state, developed, than fully cured photosensitive resist film thickness of the thin light shielding portion left behind . 后面的工序和前述实施方式相同。 And a step behind the same manner as embodiment.

如上所述,权利要求1所述的灰调掩模的制造方法,可以一次进行用于制造灰调掩模的描绘,所以能够防止由于以往的第二次光刻工序的描绘时的校准偏移、或改变曝光量分别连续描绘两种描绘图形时描绘机的位置精度偏移等的影响造成的品质恶化。 As described above, the method for producing the gray-tone mask as claimed in claim 1, can be used to depict producing a gray tone mask, it is possible to prevent the calibration of the second drawing conventional offset lithography step , quality, or separately and continuously changing the exposure amount of influence the position accuracy of the offset depict two kinds of pattern drawing device when the drawing or the like caused by deterioration. 因此,可以充分确保掩模的品质,特别适合制造遮光部和半透光部的位置精度或大小、尺寸等的图形精度要求高的灰调掩模。 Thus, the mask can be sufficiently ensure the quality, particularly suitable for producing high light shielding portions and light transmitting portions of the half size or position accuracy, pattern size and the like of the gray-tone mask accuracy. 并且,由于可以一次进行描绘,所以利用以往进行两次描绘时的一半时间即可完成描绘,相应地能够缩短掩模制造需要的时间。 Further, since drawing can be carried out once, so the use of the conventional half the time drawing is performed twice to complete the drawing, accordingly possible to shorten the time required for mask manufacture.

权利要求2所述的灰调掩模的制造方法,为了确保高品质的TFT特性,可以高精度地形成特别重要的源极和漏极之间的沟道部的图形,能够充分确保图形精度要求高的TFT基板制造用灰调掩模的品质。 The method of manufacturing a gray-tone mask of claim 2, in order to ensure a high quality TFT characteristics can be formed with high accuracy between the pattern of the channel portion particularly important source and drain can be sufficiently ensure the pattern accuracy producing a high quality TFT substrate gray tone mask.

权利要求3所述的灰调掩模的制造方法,在本发明使用的掩模坯料的半透光膜和遮光膜之间,设置具有在通过蚀刻去除半透光部的遮光膜时用于保护下层的半透光膜的作为蚀刻挡块的功能的缓冲膜,所以遮光膜和半透光膜的材质选择范围广,能够获得具有所期望的半透过特性的灰调掩模。 A method of manufacturing a gray-tone mask as claimed in claim 3, between the shielding film and the semitransparent film of the mask blank of the present invention is provided with for protecting light-shielding film is removed by etching the semi-transparent portion semipermeable film of the lower layer functions as an etching stopper of the buffer film, the wide choice of materials and light-shielding film a semitransparent film can be obtained with half the desired transmission characteristics of the gray-tone mask.

权利要求4所述的灰调掩模的制造方法,使用在透明基板上至少形成遮光膜的掩模坯料,和前述本发明之一相同,能够获得图形精度高的灰调掩模,并且具有所使用的掩模坯料的层结构简单、容易制造的优点。 Gray tone mask blank manufacturing method of a mask according to claim 4, is formed on a transparent substrate using at least the light shielding film, and the present invention is the same one, it is possible to obtain a high precision of the gray-tone mask pattern, and having simple layer structure of the mask blank to be used, the advantages of easy to manufacture.

Claims (4)

1.一种灰调掩模的制造方法,该灰调掩模具有遮光部、透光部和半透光部,其特征在于,具有下述工序:准备在透明基板上至少顺序形成半透光膜和遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻遮光膜和半透光膜并形成透光部的工序;仅去除残留在所述半透光部上的抗蚀图形的工序;把在所述工序残留的抗蚀图形作为掩模,蚀刻遮光膜和半透光膜的层压膜的一部分并形成半透光部的工序。 1. A method of manufacturing a gray-tone mask, the gray-tone mask has a light shielding portion, the light-transmitting portion and semi-transparent portion, which comprising the steps of: preparing at least semi-transparent sequentially formed on a transparent substrate, film and light-shielding film mask blank step; mask blank is formed in a resist on said film; a step of exposing the resist film, the process comprising: forming a semi-transparent portion of the resist film section, for graphical resolution limit of the exposure apparatus exposing the resist film according to the following pattern is exposed; developing process of the resist film to form a semi-light transmitting portion is formed so that part of the light shielding portion is formed and different values ​​of the residual film portion of the resist pattern of the resist step; said resist pattern as a mask, etching the light shielding film and the semitransparent film is formed, and a translucent portion; removing only the remaining half step resist pattern on a light-transmitting portion; the step in said remaining part of the resist pattern as a mask film layer, etching the light shielding film and a step of forming a semitransparent film and semi-transparent portion.
2.一种灰调掩模的制造方法,该灰调掩模是在薄膜晶体管基板的制造工序中使用的掩模,具有遮光部、透光部和半透光部,从所述遮光部形成对应所述薄膜晶体管基板的源极和漏极的图形,从所述半透光部形成对应沟道部的图形,其特征在于,具有下述工序:准备在透明基板上至少顺序形成半透光膜和遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻遮光膜和半透光膜并形成透光部的工序;仅去除残留在所述半透光部上的抗 2. A method of manufacturing a gray-tone mask, the gray-tone mask is used in the manufacturing process of the thin film transistor substrate a mask having a shielding portion, the light-transmitting portion and the semi-transparent portion, said shielding portion is formed from corresponding to the source and drain of the thin film transistor substrate pattern is formed corresponding to the channel pattern portion from said semi-transparent portion, which comprising the steps of: preparing at least semi-transparent sequentially formed on a transparent substrate, film and light-shielding film mask blank step; mask blank is formed in a resist on said film; a step of exposing the resist film, the process comprising: forming a semi-transparent portion of the resist film section, for graphical resolution limit of the exposure apparatus exposing the resist film according to the following pattern is exposed; developing process of the resist film to form a semi-light transmitting portion is formed so that part of the light shielding portion is formed and different values ​​of the residual film portion of the resist pattern of the resist step; said resist pattern as a mask, etching the light shielding film and the semitransparent film is formed, and a translucent portion; removing only the remaining half anti-light-transmitting portion on the 图形的工序;把在所述工序残留的抗蚀图形作为掩模,蚀刻遮光膜和半透光膜的层压膜的一部分并形成半透光部的工序。 A step pattern; the step in said remaining part of the resist pattern as a mask film layer, etching the light shielding film and a step of forming a semitransparent film and semi-transparent portion.
3.根据权利要求1或2所述的灰调掩模的制造方法,其特征在于,在所述掩模坯料的半透光膜和遮光膜之间,设置在通过蚀刻去除遮光膜时用于保护半透光膜的缓冲膜。 The method of manufacturing a gray-tone mask of claim 1 or claim 2, wherein the mask blank between said semitransparent film and the light-shielding film is provided for removing the light-shielding film by etching when semipermeable film of protective buffer film.
4.一种灰调掩模的制造方法,该灰调掩模具有遮光部、透光部和半透光部,其特征在于,具有下述工序:准备在透明基板上至少形成透过率具有膜厚依赖性的遮光膜的掩模坯料的工序;在所述掩模坯料上形成抗蚀膜的工序;对抗蚀膜进行曝光的工序,该工序包含:在所述抗蚀膜的形成半透光部的部分,将用于对该抗蚀膜实施图形曝光的曝光装置的分辨率限度以下的图形进行曝光;进行所述抗蚀膜的显影处理,形成使形成遮光部的部分和形成半透光部的部分的抗蚀剂残留膜的值不同的抗蚀图形的工序;把所述抗蚀图形作为掩模,蚀刻已曝光的遮光膜并形成透光部的工序;仅去除残留在所述半透光部上的抗蚀图形的工序;把在所述工序残留的抗蚀图形作为掩模进行蚀刻以形成能够使已曝光的遮光膜获得规定的透过率的膜厚,并形成半透光部的工序。 4. A method of manufacturing a gray-tone mask, the gray-tone mask has a light shielding portion, the light-transmitting portion and semi-transparent portion, which comprising the steps of: preparing at least formed on a transparent substrate having a transmittance the light-shielding film mask blank film thickness dependency of the step; mask blank is formed in a resist on said film; a step of exposing the resist film, comprising the step of: forming the resist in a semipermeable membrane portion of the light unit, for graphical resolution limit of the exposure apparatus exposing the resist film following the pattern exposure embodiment; developing process of the resist film, is formed so that part of the light shielding portion is formed and a semipermeable resist pattern different step value remaining portion of the resist film portion of the light; said resist pattern as a mask, etching the exposed portion of a translucent and light-shielding film is formed; removing only the remaining resist pattern on the semi-transparent step portion; the remaining step in the resist pattern as a mask to form an etching the light shielding film can be exposed to obtain a predetermined thickness of the transmittance, and semipermeable process of the optical portion.
CN 200410062538 2003-06-30 2004-06-30 Method for producing grey mask CN1284044C (en)

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