TWI244190B - Substrate for IC package - Google Patents
Substrate for IC package Download PDFInfo
- Publication number
- TWI244190B TWI244190B TW93112733A TW93112733A TWI244190B TW I244190 B TWI244190 B TW I244190B TW 93112733 A TW93112733 A TW 93112733A TW 93112733 A TW93112733 A TW 93112733A TW I244190 B TWI244190 B TW I244190B
- Authority
- TW
- Taiwan
- Prior art keywords
- integrated circuit
- substrate
- line
- circuit package
- edge
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000004806 packaging method and process Methods 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000008280 blood Substances 0.000 claims 1
- 210000004369 blood Anatomy 0.000 claims 1
- 239000000565 sealant Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
12441901244190
【發明所屬之技術領域】 本發明係有關於一種積體電路封裝基板,特別係有關 於一種用以減少訊號延遲之積體電路封裝基板。 【先前技術】 、 在積體電路封裝領域中,各式積體電路係先製作於一 半導體晶片’再將晶片裝設於一基板並電性連接之後,以 封膠體或外殼密封該晶片,以得到適當之封裝保護。目前 積體電路封裝基板係由一基板條切割形成,其形狀為正方 f或長方形,例如球格陣列封裝基板(BGA substrate), 隨著積體電路之高頻化發展,基板内之線路設計更顯重 要’ 一旦基板内部之線路長短差異過大,則會有能量損耗 與阻^几差異過大的問題。 一我國專利公告第531816號「半導體封裝構造之基板」 揭不有一種積體電路封裝基板,該基板之主體係為矩形並 具有複數個導線,複數個條狀金屬條配置於該主體之角落 處,以增強基板結構,一防銲綠漆係覆蓋並保護該些金屬 條,其中一導線之接球墊係鄰近該基板主體之角落,故具 有較長之長度,導致能量損耗與阻抗差異過大。 ^[Technical field to which the invention belongs] The present invention relates to an integrated circuit package substrate, and more particularly, to an integrated circuit package substrate for reducing signal delay. [Previous technology] In the field of integrated circuit packaging, various integrated circuits are first fabricated on a semiconductor wafer, and then the wafer is mounted on a substrate and electrically connected, and then the wafer is sealed with a sealing compound or a shell to Get proper package protection. At present, integrated circuit packaging substrates are formed by cutting a substrate strip and have a square f or rectangular shape, such as a ball grid array packaging substrate (BGA substrate). With the development of high-frequency integrated circuits, the circuit design in the substrate is more Significantly important 'Once the difference in the length of the circuit inside the substrate is too large, there will be a problem of too large difference in energy loss and resistance. A Chinese Patent Bulletin No. 531816 "Substrate for semiconductor packaging structure" does not disclose a substrate for integrated circuit packaging. The main system of the substrate is rectangular and has a plurality of wires. A plurality of strip-shaped metal strips are arranged at the corner of the main body. In order to strengthen the substrate structure, a solder-proof green paint covers and protects the metal strips. The ball pad of one of the wires is adjacent to the corner of the substrate body, so it has a long length, resulting in excessive energy loss and impedance difference. ^
请參閱第1圖,一種習知之積體電路封裝基板丨〇()係具 有一包含有一黏晶區HQ之上表面以及一下表面12〇,該上 表面係供黏没晶片於該黏晶區丨丨θ,該下表面1 2 〇係可供在 封裝製程中接植複數個銲球,以供表面接合,該基板丨〇〇 ^ ^ 3有複數個導接線路WO A i AO,作為晶片與銲球(或 八它對外連接元件)之内部連接路徑,每一導接線路^^或 麵 麵 1244190 五、發明說明(2) 140係具有一在上表面之内指端131、141以及一在下表面 120之外接端132、142,該些内指端131係可電性連接至在 該黏晶區11 〇上之晶片(圖未緣出),利用對應導通孔1 3 3、 143達到上下表面之電性導通,其中一導接線路丨3〇之外接 端132係鄰近該基板之邊緣,隨著佈線之複雜,其中至少 一另一導接線路140之外接端142係鄰近該基板之角隅,故 該導接線路140相對於該導接線路130具有較長之長度,習 知4連接基板角隅之導接線路14〇之長度可能大於該導接 線路130之長度一點五倍以上,故該導接線路14〇會有能量 損耗與阻抗差異過大之現象,在高頻積體電路運算 ^ 時間或訊號之延遲。 【發明内容】 本發明之主要目的係在於提供一種積體電路封裝基 板,其包含有複數個導接線路,該基板之下表面係至少具 有兩垂直之邊緣,在兩邊緣之間係形成有一缺角斜邊,& 中一導接線路之外接端係鄰近該缺角斜邊,使得該導接^ 路之長度不超過其它導接線路之長度一點二倍,以減少 '能 置損耗與阻抗差異,進而減少訊號延遲之發生。 本發明之次一目的係在於提供一種積體電路封裝基 板,利用在該基板之下表面兩垂直邊緣之間係形成有一缺_ 2斜邊,可使其中一導接線路之外接端係鄰近該缺角斜、 邊,且在該基板之上表面係包含有一封膠區,該封膠區係 ^有-角隅斜邊,該下表面之缺角斜邊係與該角隅斜邊為 平行,以增進該基板在角隅處之結構強度。Please refer to FIG. 1. A conventional integrated circuit package substrate 丨 () has a top surface including a sticky crystal region HQ and a bottom surface 120, and the top surface is used for sticking a wafer in the sticky crystal region 丨丨 θ, the lower surface 1 2 0 series can be used to implant a plurality of solder balls in the packaging process for surface bonding, the substrate 丨 〇 ^ ^ 3 has a plurality of conductive lines WO A i AO, as a chip and The internal connection path of the solder ball (or eight external connection elements), each connection line ^^ or surface 1244190 V. Description of the invention (2) 140 has an inner finger end 131, 141 and an under The terminals 120 and 132 are connected to the outside of the surface 120. The fingers 131 are electrically connected to the wafer (not shown in the figure) on the sticky crystal region 110, and the corresponding upper and lower surfaces are obtained by using the corresponding vias 1 3 3 and 143. For electrical continuity, one of the conductive lines 丨 30 external terminals 132 are adjacent to the edge of the substrate. With the complexity of the wiring, at least one of the other conductive lines 140 external terminals 142 are adjacent to the corner of the substrate. Therefore, the conductive line 140 is longer than the conductive line 130 The length of the conductive line 14 of the connection substrate corner 习 may be more than 1.5 times longer than the length of the conductive line 130. Therefore, the conductive line 14 may have a large energy loss and impedance difference. High-frequency integrated circuit calculates ^ time or signal delay. [Summary of the Invention] The main object of the present invention is to provide an integrated circuit package substrate including a plurality of conductive lines. The lower surface of the substrate has at least two vertical edges, and a gap is formed between the two edges. Angled hypotenuse, & the outer end of the one lead line is adjacent to the notched hypotenuse, so that the length of the lead line does not exceed the length of the other lead lines by a factor of two, in order to reduce the The difference in impedance reduces the occurrence of signal delays. A second object of the present invention is to provide an integrated circuit packaging substrate. A beveled edge is formed between two vertical edges of the lower surface of the substrate, so that one of the outer ends of the conductive lines can be adjacent to the other. The beveled bevel and edge, and the upper surface of the substrate contains a glue zone, the sealant area is provided with a -corner beveled edge, and the beveled edge of the lower surface is parallel to the beveled edge. To improve the structural strength of the substrate at the corners.
第9頁 1244190Page 9 1244190
面及j本發明之積體電路封裝基板,該基板係具有一上表 及至少面/且該基板係包含有至少一第一導接線路以 首弟—導接線路,其中,該下表面係包含有相互垂 絡一邊緣與一第二邊緣,在該第一邊緣與該第二邊 私极二糸形成有一缺角斜邊,該缺角斜邊應與該上表面之 一 / ^之角隅斜邊為平行為較佳,該第一導接線路係具有 *在違上表面之第一内指端以及一在該下表面之第一外接 端,該第一外接端係鄰近該第一邊緣,並且,該第二 線路係具有一在該上表面之第二内指端以及一在該下表面 第、外接^ ’ a亥第一外接端係鄰近該缺角斜邊,使得該y 第二導接線路之長度不超過該第一導接線路之長度一點二 較佳地’該第一導接線路係與該第一導接線路具有一 致之長度,以減少該第二導接線路之能量損耗與阻抗差 異。 【實施方式】 參閱所附圖式,本發明將列舉以下之實施例說明。 依本發明之一具體實施例,請參閱第2及3圖,一種積 體電路封裝基板20 0係具有一上表面210及一下表面22〇, 該上表面210係用以裝設一晶片310,在本實施例中,該基 板之上表面2 10係定義有一黏晶區211以及一包含該黏』^ ·瞧 211之封膠區212,該基板之下表面220係作為對外之表面 接合,其中該下表面220係包含有相互垂直之一第一邊緣 221與一第二邊緣2 22,在該第一邊緣221與該第二邊緣222 之間係形成有一缺角斜邊223,較佳地,該封膠區2 1 2係具The substrate and the integrated circuit package substrate of the present invention, the substrate has an upper surface and at least the surface / and the substrate includes at least a first conductive line to a first-conductor line, wherein the lower surface is Containing an edge and a second edge that are perpendicular to each other, a notched hypotenuse is formed at the first edge and the second private pole, and the hypotenuse should be at an angle with one of the upper surface.隅 It is preferable that the hypotenuse is parallel. The first conductive line has a first inner finger end on the upper surface and a first external end on the lower surface, and the first external end is adjacent to the first Edge, and the second circuit has a second inner finger end on the upper surface and a first, outer ^ 'a outer first end on the lower surface adjacent to the hypotenuse, so that the y first The length of the two lead lines does not exceed the length of the first lead line 1.2 It is preferred that the first lead line has a consistent length with the first lead line to reduce the second lead line Energy loss and impedance difference. [Embodiment] With reference to the drawings, the present invention will be described by the following embodiments. According to a specific embodiment of the present invention, please refer to FIGS. 2 and 3, a integrated circuit package substrate 200 is provided with an upper surface 210 and a lower surface 220. The upper surface 210 is used for mounting a chip 310. In this embodiment, the upper surface 2 10 of the substrate defines a sticky crystal region 211 and a sealant region 212 containing the adhesive. ^ See 211. The lower surface 220 of the substrate is used as an external surface bonding, where The lower surface 220 includes a first edge 221 and a second edge 22 22 perpendicular to each other. A notch beveled edge 223 is formed between the first edge 221 and the second edge 222. Preferably, The sealing area 2 1 2
1244190 五、發明說明(4) 有一角隅斜邊213,該缺角斜邊223係與該角隅斜邊21 3為 平行’以增進該基板200之角隅結構強度,降低封裝後之 翹曲度,在本實施例中,該封膠區2 1 2之角隅斜邊2 1 3係為 一封膠體330之注膠入口。 並且,該基板2 00係包含有至少一第一導接線路23〇以 及至少一第一導接線路2 4 0,該第一導接線路2 3 〇係具有一 在該上表面210之第一内指端2 31以及一在該下表面22〇之 第一外接端232,該第一導接線路2 3 〇係至少連接有一第一 導通孔233(first via),故可使得該第一内指端231與該 第一外接端232形成在該基板2〇〇之上下表面,該第一/外接 端232係鄰近該第一邊緣mi,並且,該第二導接線路24〇 亦具有一在該上表面21〇之第二内指端2 4ι以及一在該下表 面220之第二外接端242並至少連接有一第二導通孔243 (fecond via),該第二外接端242係鄰近該缺角斜邊223, 較佳地,該第二外接端242與該缺角斜邊223之距離係不超 過該第一外接端232與該第一邊緣221之距離,此外,該第 導,線路2 40之長度亦不超過該第一導接線路Μ。之長度 女較佳地,該第二導接線路240係與該第一導接 致之長度’以減少該第二導接線路240之能 :‘篦:t抗差異’在本實施例中,$第一導接線路230 二== 一接線路24◦係為訊號傳遞線路,使得該基板20 0 月^、用於馬頻積體電路封裝,不易有訊號延遲(signai 通常在該基板測之上表面21 G與下表面220 、 ^ 防銲層25〇,以保護該第一導接線路2 30與 1244190 五、發明說明(5) 該第二導接線路240但顯露出第一内指端231、第二内指端 241、第一外接端232與第二外接端242。 再者’請參閱第3圖,在使用上述基板2 〇 〇之一種積體 電路封裝構造中,一晶片310係設於該基板2〇〇之上表面 21 0之黏晶區211,在本實施例中,以打線方式形成之銲線 32 0由該晶片310之銲墊連接至該基板2 〇〇之該第一内指端 231與該第二内指端241,將該晶片310電性連接至該基板 200,或者,該晶片310係可運用覆晶與内引腳接合(inner lead bonding,ILB)技術以其它習知導接元件電性連接至 該基板200,此外,一封膠體330可運用壓模技術而設於該鲁 基板2 0 0之封膠區2 1 2上,較佳地,在壓模過程中,該封膠 體330係由該封膠區212之角隅斜邊2 13注入再固化成形, 利用該基板2 〇〇之缺角斜邊2 23係與該角隅斜邊2 1 3為平 行,在較短之力矩下,可減少在折斷脫除該封膠體33〇外 4之廢膠對該基板2 〇 〇之損傷,並可減少該基板2 〇 〇在角隅 處之赵曲度,在本實施例中,該基板200係為一種球格陣 列封裝基板,該第一外接端232與該第二外接端242係為接 球塾’複數個銲球340係接合於在該基板下表面220之該第 一外接端232與該第二外接端242,因此,本發明之積體電 路封裝基板能大幅平衡導接線路之長短差異,以提昇整體❶ 積體電路封裝構造之數位訊號與類比訊號之品質。 、 本發明之保護範圍當視後附之申請專利範圍所界定者 為準,任何熟知此項技藝者,在不脫離本發明之精神和範 圍内所作之任何變化與修改,均屬於本發明之保護範圍。1244190 V. Description of the invention (4) A corner beveled edge 213, the notch beveled edge 223 is parallel to the corner beveled edge 21 3 'to improve the corner structure strength of the substrate 200 and reduce warpage after packaging In this embodiment, the beveled edge 2 1 3 of the glue sealing area 2 1 2 is a glue injection inlet of a glue 330. In addition, the substrate 200 includes at least one first conductive line 23 ° and at least one first conductive line 2 40. The first conductive line 2 30 has a first surface 210 on the upper surface 210. The inner finger end 2 31 and a first external end 232 on the lower surface 22 o, the first conductive line 2 30 is connected to at least a first via 233 (first via), so that the first inner The finger end 231 and the first external terminal 232 are formed on the upper and lower surfaces of the substrate 2000. The first / external terminal 232 is adjacent to the first edge mi, and the second conductive line 24 also has a The second inner finger end 24m of the upper surface 21 and a second external end 242 on the lower surface 220 are connected to at least a second via 243 (fecond via). The second external end 242 is adjacent to the defect. The angled beveled edge 223, preferably, the distance between the second external end 242 and the notched beveled edge 223 does not exceed the distance between the first external end 232 and the first edge 221. In addition, the first guide, line 2 The length of 40 does not exceed the first conductive line M. The length of the second conductive line 240 is preferably the same as the length of the second conductive line 240 to reduce the energy of the second conductive line 240: '篦: t-resistance difference' In this embodiment, $ First lead connection line 230 Second == One connection line 24 ◦ It is a signal transmission line, which makes the substrate 20 months ^, used for horse frequency integrated circuit packaging, and it is not easy to have signal delay (signai is usually measured on the substrate Upper surface 21 G and lower surface 220, ^ solder mask 25 ° to protect the first conductive line 2 30 and 1244190 V. Description of the invention (5) The second conductive line 240 but the first inner finger end is exposed 231, the second inner finger terminal 241, the first external terminal 232 and the second external terminal 242. Furthermore, please refer to FIG. 3, in a integrated circuit package structure using the above-mentioned substrate 2000, a chip 310 series The die-bonding region 211 provided on the upper surface of the substrate 2000 is 200. In this embodiment, a bonding wire 320 formed by wire bonding is connected to the first pad 200 by the bonding pad of the wafer 310. An inner finger end 231 and the second inner finger end 241 electrically connect the chip 310 to the substrate 200, or the chip 310 is The flip chip and inner lead bonding (ILB) technology can be used to electrically connect to the substrate 200 with other conventional conductive elements. In addition, a colloidal 330 can be provided on the Lu substrate 2 using stamping technology 2 On the sealant area 2 1 2 of 0 0, preferably, during the compression molding process, the sealant body 330 is injected and re-cured from the corner and beveled edge 2 13 of the sealant area 212, and the substrate 2 is used. The hypotenuse hypotenuse 2 23 is parallel to the hypotenuse hypotenuse 2 1 3. Under a shorter moment, the waste rubber that is removed except the sealing compound 3330 and the substrate 4 can be reduced. Damage, and can reduce the curvature of the substrate 2000 at the corner. In this embodiment, the substrate 200 is a ball grid array package substrate, the first external terminal 232 and the second external terminal 242 The plurality of solder balls 340 are bonded to the first external terminal 232 and the second external terminal 242 on the lower surface 220 of the substrate. Therefore, the integrated circuit package substrate of the present invention can greatly balance the connection. The difference in the length of the circuit to improve the digital signal and analog signal of the overall integrated circuit package structure The scope of protection of the present invention shall be determined by the scope of the attached patent application. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention belong to the present invention. protected range.
12441901244190
【圖式簡單說明】 G 路:裝基板之τ表面局部示意圖; Α , ^ ^ χ曰一之一具體實施例,一種積體電路封裝 基板之下表面局部示意圖,·及 、 第3圖:依據本發明之一 板在封裝後之截面局部示 具體實施例,該積體電路封裝基 意圖。 元件符號簡單說明 1 0 0基板 130導接線路 1 31内指端 140導接線路 141内指端 200基板 211 黏晶區 2 2 0 下表面 223缺角斜邊 230第一導接線路 231第一内指端 240第二導接線路 241第二内指端 2 5 0防辉層 3 1 0晶片 340 銲球 11 〇黏晶區 1 3 2外接端 14 2外接端 21 0上表面 21 2封膠區 2 21第一邊緣 232第一外接端 242第二外接端 320銲線 120 下表面 133 導通孔 143 導通孔 21 3角隅斜邊 222第二邊緣 233第一導通孔 243 第二導通孔 330封膠體[Brief description of the diagram] G: a partial schematic diagram of the τ surface of the mounting substrate; A, ^ ^ χ is one of the specific embodiments, a partial schematic diagram of the lower surface of the integrated circuit package substrate, and Figure 3: basis The cross-section of a board of the present invention after packaging is partially shown in a specific embodiment, and the integrated circuit packaging base is intended. Simple explanation of component symbols 1 0 0 substrate 130 lead line 1 31 inner finger end 140 lead line 141 inner finger end 200 base plate 211 sticky crystal area 2 2 0 lower surface 223 notch beveled edge 230 first lead line 231 first Inner finger end 240 Second conductive line 241 Second inner finger end 2 5 0 Anti-glow layer 3 1 0 Chip 340 Solder ball 11 〇Crystal region 1 3 2 External end 14 2 External end 21 0 Upper surface 21 2 Sealant Zone 2 21 First edge 232 First external end 242 Second external end 320 Welding wire 120 Lower surface 133 Via hole 143 Via hole 21 3 beveled edge 222 Second edge 233 First via hole 243 Second via hole 330 Seal colloid
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW93112733A TWI244190B (en) | 2004-05-06 | 2004-05-06 | Substrate for IC package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW93112733A TWI244190B (en) | 2004-05-06 | 2004-05-06 | Substrate for IC package |
Publications (2)
Publication Number | Publication Date |
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TW200537673A TW200537673A (en) | 2005-11-16 |
TWI244190B true TWI244190B (en) | 2005-11-21 |
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Family Applications (1)
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TW93112733A TWI244190B (en) | 2004-05-06 | 2004-05-06 | Substrate for IC package |
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TW (1) | TWI244190B (en) |
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