TWI240130B - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device according to the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes: a plurality of gate lines; a plurality of source lines arranged to cross with the plurality of gate lines; a plurality of switching elements disposed in the vicinity of crossings of the plurality of gate lines and the plurality of source lines; and a plurality of pixel electrodes connected to the plurality of switching elements. The second substrate includes a counter electrode. A plurality of pixel regions are defined by the plurality of pixel electrodes, the counter electrode, and the liquid crystal layer interposed between the plurality of pixel electrodes and the counter electrode, and each of the plurality of pixel regions includes a reflection region and a transmission region.

Description

1240130 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a liquid crystal display device and a method for manufacturing the liquid crystal display device. The present invention relates particularly to a liquid crystal having a transmissive display area and a reflective display area in each pixel. Display device and method for manufacturing the liquid crystal display device. [Prior art] LCD devices are widely used because they are thin and consume low energy. They include office automation (0A) devices such as word processors and personal computers, and carry 4 data devices such as portable electronic schedules, And a VCR with a liquid crystal detector and a camera. Unlike a CRT display and an electro-optic (EL) display, the liquid crystal display device includes a liquid crystal display panel which does not emit light by itself. Therefore, the so-called transmissive type is often used as a liquid crystal display device, which includes an illuminator called back light on the back or one side, so the amount of light from the back light that penetrates the liquid crystal panel is controlled by the liquid crystal panel to obtain Image display. However, in such a transmissive liquid crystal display device, the backlight consumes 50% or more of the total energy consumed by the liquid crystal display device. Providing backlighting therefore increases energy consumption. To overcome the aforementioned problems, reflective liquid crystal display devices are used in portable data devices that are often used outdoors or carried by users. The reflective liquid crystal display device has a reflector on one of the pair of substrates to replace the backlight and reflect ambient light from the reflection from the surface. This reflective liquid crystal display device operates in a display mode using a polarizing plate.

O: \ 92 \ 92808.DOC 124〇13〇, " Wide / lack of twisted nematic (tn) mode for transmissive LCD # display device Super twisted nematic (STN) mode. In recent years, a phase-change guest-host mode that has obtained a clearer display-free display without using a polarizing plate has flourished. The disadvantage of reflective liquid crystal display devices using ambient light reflection is that when the surrounding environment is dark, the visibility of the display is extremely low. On the contrary, the transmissive type "", ", said, the shortcoming of the display device is disadvantageous when the environment is bright. That is, the color reproducibility is low 'and the brightness of the display light is lower than that of the ambient light, so the song cannot be completely recognized. In order to improve the display quality in a bright environment, the intensity of the backlight must be increased. This situation increases the back light and the consumption of the formed liquid crystal display device, and when the liquid crystal display device needs to be viewed in a position directly exposed to sunlight or direct light, the display quality is necessarily lowered due to ambient light. For example, when the screen of a liquid crystal display device fixed to a car or a display screen of a personal computer fixed to a device directly receives sunlight or light, it is difficult to view its own display. In order to overcome the foregoing problems, for example, in Japanese Laid-Open Publication No. 7_333598, a liquid display device having both a transmission mode display and a reflection mode display has been disclosed. This liquid crystal display device has a semi-transmissive reflective film that transmits partial light and reflects part of the light. FIG. 52 shows a liquid crystal display device using a semi-transmissive reflective film. The liquid crystal head display device includes polarizing plates 30a and 30b, a phase plate 31, a transparent substrate 3, 2, a black mask 33, a counter electrode 34, an alignment film 35, a liquid crystal layer 36, and a metal_insulator-metal (MIM). ) Element π, pixel electrode 38, light source 39, and reflective film 40. The pixel electrode 38 is a semi-transmissive reflective film, which is made of metal particles. It is an extremely thin layer or a material with scattered microporous defects or depression defects on each pixel.

O: \ 92 \ 92808.DOC 1240130 layer. The pixel electrode having such a structure allows the light from the light source 39 to pass through and reflects the bla light such as m-rays and indoor irradiation light, and has both a transmissive display function and a reflective display function. The conventional liquid crystal display device shown in Fig. 52 has the following problems. First, when an extremely thin layer of deposited metal particles is used as a semi-transmissive reflective film for each pixel; ^ Because it is a particle, "the absorption coefficient is extremely high, so the internal absorption of incident light is extremely high. Some light is absorbed and cannot be used. For display, thus reducing the utilization efficiency of light. When using a film with scattered microporous defects or recessed defects as the pixel electrode 38 of each pixel, the structure of the film is too complicated to be controlled, and more accurate Design conditions. Therefore, it is difficult to produce a thin film having a uniform hooking property. The reproducibility of the electrical or optical characteristics is extremely poor, and it is extremely difficult to control the display quality in the aforementioned liquid crystal continuous device. For example, 'If thin film transistors (TFTs) of switching elements of liquid crystal display devices have been widely used in liquid crystal display devices shown in FIG. 52 for the past year, the electrodes used to form storage capacitors in each pixel must be borrowed from the pixel electrode. Formed with electrodes / connecting materials. In this case, like conventional devices, a pixel electrode made of a semi-transmissive reflective film is not suitable for forming a library capacitance. Moreover, even if a transmissive reflective film as a pixel electrode is formed on a part of connection points and elements via an insulating layer, the pixel of the transmission component should increase the numerical aperture. Moreover, if the light is incident on the semiconductor layer of the switching element, the insulator metal and the thin film transistor, light will be generated. The formation of a semi-transmissive reflective film as a light-shielding layer is insufficient to protect the U-switching element from light. To determine the light-shielding property,

O: \ 92 \ 92808.DOC 1240130 Another layer of light-shielding film is placed on the board. [Summary of the Invention] The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the " Heidi substrate and the second substrate; a plurality of pixel regions, which are composed of The electrodes for applying a voltage to the liquid crystal layer are individually defined, and each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific example of the present invention, the first substrate includes a reflective electrode region corresponding to a reflection region and a transmissive electrode region corresponding to a transmission region. In another embodiment of the present invention, the reflective electrode region is higher than the transmissive electrode region, and a step is formed on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is smaller than the thickness of the liquid crystal layer in the transmissive region. In another embodiment of the present invention, the area of the reflection area occupies about 10 to about 90% of each pixel area. Or the liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate, and the first substrate includes: a plurality of gate lines; A plurality of source lines that intersect the plurality of gate lines; a plurality of switching elements that are located near the intersection of the plurality of gate lines and the plurality of source lines; and a plurality of pixel electrodes that Is connected to the plurality of switching 70 pieces, the second substrate includes a counter electrode, and the plurality of pixel regions are sandwiched by the plurality of pixel electrodes, the counter electrode, and the plurality of pixel electrodes and the pair A liquid crystal layer is defined between the electrodes, and each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific example of the present invention, the first substrate includes a reflective electrode region corresponding to a reflective region and a transmissive electrode region corresponding to a transmissive region.

O: \ 92 \ 92808.DOC 1240130 In another embodiment of the present invention, the reflective electrode region is higher than the transmissive electrode region, and a step is formed on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is less than The thickness of the liquid crystal layer in the transmission region. In another embodiment of the present invention, the thickness of the liquid crystal layer in the reflective region is about one-half the thickness of the liquid crystal layer in the transmissive region. In another embodiment of the present invention, each pixel electrode includes a reflective electrode in a reflective electrode region and a transmissive electrode in a transmissive electrode region. In another embodiment of the present invention, the reflective electrode and the transmissive electrode are electrically connected to each other. In another embodiment of the present invention, each of the pixel electrodes includes a transmissive electrode and the * H-reflection region includes a transmissive electrode and a reflective layer isolated from the transmissive electrode. In another specific embodiment of the present invention, the reflective electrode region overlaps at least a part of the plurality of gate lines, the plurality of source lines, and the plurality of switching elements. In another embodiment of the present invention, at least one of the reflective electrode region and the transmissive electrode region has a material layer that is the same as the material of the plurality of gate lines or the plurality of source lines. In another specific embodiment of the present invention, the area of the reflective region in each pixel region accounts for about 10 to about 90%. In another embodiment of the present invention, the first substrate further includes a storage capacitor electrode for forming a storage capacitor with the pixel electrode through an insulating film, wherein the reflective electrode region overlaps the storage capacitor electrode. In another embodiment of the present invention, the liquid crystal display device further includes

O: \ 92 \ 92808.DOC -10- 1240130 Microlenses on the surface of the first substrate opposite to the liquid crystal layer. In another embodiment of the present invention, each reflective electrode region includes a metal layer and an intermediate layer insulating film located under the metal layer. In another embodiment of the present invention, the metal layer has a continuous wave type. In another embodiment of the present invention, the interlayer insulating layer has a concave shape and a convex shape. In another embodiment of the present invention, the interlayer insulating layer is formed of a photosensitive polymer resin film. In another embodiment of the present invention, the intermediate insulating layer covers at least a part of the switching element, the gate lines, or the source lines. In another embodiment of the present invention, the reflective electrode is formed at the same height as the plurality of gate lines or the plurality of source lines. The gate lines are the same height, and in another embodiment of the present invention, the reflective electrode is used in conjunction with the pixel electrodes. The reflective electrode is electrically connected to the gate line for another specific embodiment of the present invention adjacent to the reflective electrode.

container. In the example, the reaction is the same as that applied to the pair of electrodes: in the example, the reflection and the reflection electrode overlap to form a storage battery.

form. The reflective electrode is made of aluminum or aluminum alloy. In another embodiment of the present invention, the transmissive electrode is made of indium tin oxide.

O: \ 92 \ 92808.DOC -11-1240130, and the metal layer is sandwiched between the transmissive electrode and the reflective electrode. Another aspect of the present invention is to provide a method for manufacturing a liquid crystal display device. The crystal display device includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate. The first substrate includes a device and a gate line. Multiple source lines, which intersect with the multiple gate lines; multiple, components /, are located near two of the intersections of the multiple gate lines and the multiple source lines, 'a multiple pixel electrodes' and Is connected to the plurality of switching elements, the first substrate includes a counter electrode, a plurality of pixel regions, the plurality of pixel electrodes and the plurality of pixel electrodes sandwiched between the pixel electrodes and the The liquid crystal layer between the electrodes is defined, and each of the pixel areas of μm + μx includes a reflective area = a transmissive area. 4 The method includes steps. · Use a material with high light transmittance in the- A transmissive electrode region is formed on the sheet substrate; a photosensitive polymer resin layer is formed; and a reflective layer made of a material having high reflectivity is formed on the resin layer. In a specific example of the present invention, the photopolymerization Recessed part and raised part of the resin layer. Or provide a method for manufacturing a liquid crystal display. The method. The liquid crystal display device includes a first substrate, a first substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate. A single substrate includes a plurality of gate lines, and a plurality of gate lines. Source lines whose blood lines owe a cross to the gate line; multiple switching elements are located near the intersection of the source lines and the multiple lines; and multiple pixels An electrode is connected to a switching element mounted on the sea, the second substrate is a counter electrode, and the plurality of picture elements L are formed by the plurality of picture element electrodes and an opposite electrode.

° “Placed on the multiple pixel electrodes, tf %% M, liquid crystal layer between 4 pairs of electrodes

O: \ 92 \ 92808.DOC -12- 1240130, and each of the plurality of pixel regions, the method includes the step of "using two Γ radiation regions and transmission regions. The material with" transmittance "on the first- A transmissive electrode region is formed on the sheet substrate; a protective film is formed on a polar region formed on a part of the transparent film; and a reflective electrode region. Φ is formed into a "reflective material layer" to form the same height as the polar line of a specific example of the present invention. 'The polar region is connected with the plurality of strips. Therefore, the following advantages can be obtained by turning out, providing both There are liquid crystal display with transmission mode display and reflection mode display. The use of ambient light and light from behind is more efficient than the conventional phase. The liquid crystal display device is improved, and the superior display quality is served, and the baby > +, (2) edge provides a method for manufacturing the liquid crystal display device. The display quality obtained under the bright environment of the liquid crystal display of the present invention is particularly greatly improved in Those skilled in the art can understand these and other advantages of the present invention after reading the following detailed description with reference to the drawings. [Embodiment] (Embodiment 1) The liquid crystal display device according to Embodiment 1 of the present invention includes an active substrate and A transparent pair of wires (such as a glass substrate) has a pair of electrodes opposite to the pixel electrode. A hard crystal layer is sandwiched between the active array substrate and the pair of substrates. It is used to apply a voltage to the liquid crystal. Each pixel electrode of the layer and the substrate define a plurality of pixel regions. The pixel region includes a counter electrode and a liquid crystal layer interposed between the pair of electrodes. The definition can also be applied to a simple matrix liquid crystal display. Device, the dragon has multiple scan electrodes and multiple signal electrodes.

O: \ 92 \ 92808.DOC -13-1240130 Each pixel of the liquid crystal display device of the present invention has at least one transmission area and at least one reflection area. The transmission region and the reflection region include a liquid crystal layer and a pair of electrodes sandwiching the liquid crystal layer. The electrode region that defines the transmissive region is called a transmissive electrode region, and the electrode region that bounds the reflective region is called a transmissive electrode. FIG. 1 is a plan view of a pixel portion of an active array substrate of the liquid crystal display device of Example 1. . Fig. 2 is a sectional view taken along line a-b of Fig. 1. Referring to Figs. 1 and 2, the active array substrate includes pixel electrodes 1 arranged in a matrix. The gate line 2 for providing a scanning signal and the source line 3 for providing a display signal are arranged along the periphery of the pixel electrode 1 so as to intersect at right angles to each other. The edge portions of the gate lines 2 and the corresponding pixel electrodes 丨 of the source lines 3 are overlapped via the interlayer insulating film 19. The gate line 2 and the source line 3 include a metal film. "Thin boat transistors (TFTs) 4 are formed near the intersections of gate line 2 and source line 3. The gates 12 of each thin film transistor 4 are connected to the corresponding question line 2 'to pass through the gate line. 2 Input the signal to the gate 12 to drive the thin film transistor *. The source 15 of the thin film transistor 4 is connected to the corresponding source to receive the data signal from the source line 3. The 16 electrode of the thin film transistor 4 Connected to the connection electrode, electrode 5 ', which is electrically connected to the corresponding pixel electrode via the contact hole 6 in sequence Γ ::, 5, and forms a capacitor with the storage capacitor electrode 8 via the closed-electrode insulating film 7 ,: ... the storage capacitor 8 A metal film is included, and the pair of electrodes on the substrate 9 are connected to each other via the electronic film. The storage capacitor is crying. Electricity (”can be formed from the closed electrode line 2_ in the same step. Electricity includes a reflective electrode region 22 ′ which includes a metal film, and

O: \ 92 \ 92808.DOC -14-1240130 The solid transmission encapsulation region 20 includes a hafnium tin oxide film. The reflective electrode region 22 covers the gate line 2, the source line 3, the thin film transistor 4, and the storage electrode 8, and the transmissive electrode region 20 is surrounded by the reflective electrode region 22. The active array substrate of Example 1 having the foregoing structure was manufactured in the following manner. First, a gate 12, a gate line 2, a storage capacitor electrode 8, a gate insulating film 7, a semiconductor layer 13, a channel protection layer, and a source are formed on a transparent insulating substrate made of glass and other materials in order. 15, and the drain 16. After that, a transparent conductive film 7 and a metal film 8 are sequentially deposited by tearing, and a wiring pattern is formed to form the source line 3 and the connection electrode 5. Therefore, the source line 3 has a double-layer structure including a transparent conductive film 17 and a metal film 18 made of rhenium tin oxide. With this structure, even if a defect such as a disconnection occurs in the metal film 18, the electrical connection can be maintained through the transparent conductive film 7. The possibility of disconnection in the source line 3 is reduced. Thereafter, a photosensitive acrylic resin was applied to the formed substrate by a spin coating method to form an interlayer insulating film 19 having a thickness of 3 m. The acrylic resin is then exposed according to the required wiring pattern and developed using an alkaline solution. Only the exposed portion of the film is etched by the alkali solution to form a contact hole penetrating the interlayer insulating film 19. By this alkaline solution developing method, a contact hole 6 having a perfect tapered shape is obtained. The advantages of using a photosensitive propionic acid resin as the interlayer insulating film 19 are favorable for productivity based on the following factors. Because spin coating can be used to form thin films, films as thin as a few microns can be easily formed. Moreover, the photoresist application step is not required when the wiring pattern is produced in the intermediate layer insulation O: \ 92 \ 92808.DOC -15-1240130 film 19. This: In the embodiment, the acrylic resin is colored, and the whole surface can be exposed to make it transparent after making a line drawing. The malonic acid resin can also be chemically processed to make it transparent. Thereafter, a transparent conductive film 2 i is formed by sputtering and making a wiring pattern to form a transparent conductive film 21. The transparent conductive film 21 is made of indium tin oxide. Therefore, the transparent conductive film 21 is electrically connected to the connection electrodes 5 through the contact holes 6. After that, a metal film 23 is formed on the transparent conductive film 21 and a wiring pattern is made to cover the gate line 2, the source line 3, the thin film transistor 4, and the storage capacitor electrode 8 as the pixel electrode. 1 的 Reflective electrode area 22. A portion of the transparent conductive film 21 not covered by the metal film 23 constitutes a transmissive electrode region 20. The transparent conductive film 21 and the metal film 23 are electrically connected to each other. Any adjacent pixel electrodes are separated by a portion above the gate line 2 and the source line 3 so that they are not electrically connected to each other. The metal film 23 is made of A1. It can also be made of any conductive material with high reflectivity such as Ta. In this embodiment, as shown in FIG. 2, the liquid crystal layer includes two-color type pigment molecules 24 mixed in the liquid crystal. The absorption coefficient of the dichroic pigment depends on the orientation of the molecule. The orientation of the dichroic pigment molecules 24 is changed by controlling the electric field between the counter electrode 10 and the pixel electrode 1 to change the orientation of the liquid crystal molecules 25. The change in the absorption coefficient of the dichroic pigment molecule 24 is used to produce an image display.

O: \ 92 \ 92808.DOC 1240130 uses the embodiment of the above-mentioned structure of the liquid crystal display panel, the display can effectively use light, when the ambient light is low, the light from the backlight that penetrates the transmissive electrode area 20, When the ambient light is high, the light reflected by the reflective electrode region 22 is used. Moreover, the two regions of the transmissive electrode region 2G and the reflective electrode region 22 can be used to generate a display. In addition, a liquid crystal display device having a bright display can be obtained. In this embodiment, the metal film of the reflective electrode region 22 of the pixel electrode 1 covers the thin film transistor 4, the gate line 2, and the source line 3. Don't provide a light-shielding film: prevent light from entering the thin film transistor 4, and the pixel electrode is located on the gate line, the source line and the light-shielding portion of the storage capacitor electrode. Among these areas, light leakage occurs in the form of functional areas, transformation lines, etc., in the easily indicated areas. As a result, a region that cannot be used as a display region conventionally because it is shielded by a light-shielding film can be used as a display region. In this case, the display area is effectively used. When the gate line and the source line are made of metal, they serve as a light-shielding area in a transmissive display device and cannot be used as a display area. However, in the liquid crystal display device of this embodiment, the area serving as the light shielding area in the conventional transmission type display device can be used as the reflective electrode area of the pixel electrode. Therefore, a brighter display can be obtained. In this embodiment, the metal film 23 is located on the transparent conductive film 21. In this case, the metal film 23 has an uneven surface corresponding to the uneven surface of the transparent conductive film 21. The uneven surface of the metal film 23 is better than a flat surface because the uneven surface receives ambient light at various incident angles. The resulting liquid crystal display device provides a brighter display.

O: \ 92 \ 92808.DOC -17- 1240130 Figures 3 and 4 are plan views of another example of a limb with a device according to the embodiment of the present invention @ 食 仞 mi In these alternatives, the current f, 她 "In the case of Beta, each pixel electrode 1 < edge transmission electrode area 20 is relative to the two opposite side, so the area ratio of the reflection pole area 22 from the figure Those who are in charge of π have changed hands. A liquid crystal display device in this manner. ㈣ has the required reflectivity and light transmission. The alternative implementation of j + ^ ^ shown in Figs. This suppresses a decrease in brightness. A light transmitting through the electrode region 20 In the first embodiment, the metal film 23 of the Tucson Thunder shirt, the electrode 1 and the reflective electrode region 22 is located on the transparent conductive film 21. Alternatively, as shown in Figure B, as shown in Figure 6, the metal film 23 may only overlap with the April 21 reading to connect with each other. (Embodiment 2) Fang = In Embodiment 2, a description of a kind of uneven hook surface forming the metal film 23 == partly illustrates the metal located on the interlayer insulating plutonium (not shown). FIG. 6 is a sectional view taken along line c_d of FIG. 5. 2 = The surface of the edge film 19 is formed by a method such as stealth engraving and the metal film 23 is formed on the uneven surface. Therefore, by forming a metal film 23 on the intermediate acoustic horn 9 which is formed by a method such as spin coating, and then making the surface uneven as described above, a metal assist having an uneven surface can be obtained. The surface is not the same as that of a reflective liquid crystal display device. The metal film is flat on a flat surface. Because it is not as good as a uniform surface, the surface receives ambient light at various angles. A metal film with pixel electrodes formed on the fine interlayer insulating film 19

O: \ 92 \ 92808.DOC -18-1240130 23 ′ The reflective liquid crystal display device having an uneven surface as shown in FIG. 6 provides a brighter display. The uneven surface of the metal film 23 is not limited to the shape shown in Fig. 5, that is, a surface having a concave portion of a circular plane. Or, the surface of the metal film 23 and the surface of the underlying interlayer insulating film 19 may have a planar polygonal or elliptical depression. Instead of the semicircular shape shown in Fig. 6, the cross section of the concave fe? (Embodiment 3) _ In Embodiment 3, a liquid crystal display device using a guest-host display method is described. FIG. 7 is a cross-sectional view of a liquid crystal display device according to this embodiment of the present invention. The same components as those in Embodiment 1 are designated by the same reference numerals as those in Fig. 2. When the guest-host display method is used, a mixture of guest-host liquid crystal materials is used. ZLI 2327 (manufactured by Merck & Co "Inc.) Containing black pigment and 0.5% optically active substance 'S-8 11 (Merck & Co., (Manufactured by Inc.), the following problem arises. When using backlight, the optical path length dt of the light transmitted by the self-illuminated light in the transmission area is greatly different from the optical path length 2dr of the light reflected from the ambient light in the reflection area. , Between the case of using light from the backlight and the case of using ambient light, even if the same voltage is applied to the liquid crystal layer, the difference in display brightness and contrast is extremely large. Therefore, the transparent conductive film in which the liquid crystal layer is located in the transmission region The thickness dt of the part on 21 and the thickness center of the part of the liquid crystal layer on the metal thief 23 in the reflection area should be set to satisfy the relationship dt = 2dr. Therefore, in this embodiment, the thickness of the metal film 23 becomes to satisfy this relationship O: \ 92 \ 92808.DOC -19- 1240130 Therefore, 'the optical path length dt of the light transmitted by the self-illumination light in the transmission area and the optical length of the light reflected from the ambient light by the reflection area towel "Balancing" no matter what type of light is used (light from backlight or light from ambient light), the same brightness and contrast can be obtained. The prerequisite is that the same voltage is applied to the hard crystal layer. According to this method, A liquid crystal display device having better display characteristics is obtained. By making the optical path length of the light transmitted by the self-illumination light in the transmission area to be approximately the same as the optical path length of the light reflected from the ambient light in the reflection area, it is not necessary. Balance · You can get the average brightness and contrast to a certain degree. Regardless of the use: type of light (light from backlight or ambient light: 'It can also be changed by changing the distribution voltage applied to the liquid crystal layer. The contrast is uniform, even when the optical path length of the light transmitted by the self-illuminated light in the transmission area is significantly different from the optical path length of the light reflected from the ambient light in the reflection area. In the liquid crystal display devices of Examples 丨 3, a single substrate is used for it emission mode display and reflection mode display. Traditionally, black areas are used to shield light, and the spring area can be used as the reflection of each pixel electrode. Electrode area. This + Lu ,, P ~ τ +, ^ / ϋϋ effectively use the display area of the pixel electrode of the liquid crystal panel, and increase the brightness of the liquid crystal display device. In the examples 1 to 3, The storage capacitor electrode can be used to form a storage capacitor through the insulating film region: the pixel electrode, and the reflective electrode of the pixel electrode ^ LI side storage capacitor electrode. Therefore, the formation of the storage capacitor electrode can be used for display 'as a pixel electrode The reflective electrode area of | ^ |, ', and the metal film of the reflective electrode area is located on the transparent conductive film.

O: \ 92 \ 92808.DOC -20-1240130. Use a transparent conductive film with an uneven surface, a reflective electrode area and / or a pixel electrode with an uneven surface, so that the ambient light at a good angle can be used as display light.金属 The metal film with various incident pixel electrode reflection areas can be located in the middle of the insulating film and uneven surface "... the reflection electrode area of the pixel electrode and has a surface ... Two non-uniform light. ^ 〃Ambient light with various angles of people's eyes is used as the reflective electrode area of the display electrode. The metal film is thicker than the transparent conductive film in the transmission area of the picture element. And return to the liquid crystal layer level: the length of the light path of the portion of the reflective electrode region of the pixel electrode is approximately equal to the length of the light path of the portion of the light from the backlight passing through the liquid crystal layer and located in the portion of the transparent electrode of the pixel electrode, and Compare the path lengths with each other. By understanding the 'light path length', the light characteristics of the liquid crystal layer located in the reflective area and the transparent area can be uniformly changed. The liquid crystal layer is located on the reflective electrode area of each pixel electrode. The thickness is a half of the thickness of the portion of the liquid crystal layer located on its transmissive electrode region. This allows ambient light to pass through and return to the length of the optical path of the portion of the liquid crystal layer located in the reflective electrode region of the pixel electrode. The length of the back light rays passing through the portion of the liquid crystal layer located in the transmissive electrode region of the pixel electrode is approximately equal, and the path lengths are compared with each other. By knowing the approximate light path length, it is possible to evenly penetrate the reflection area. And the change in the light characteristics of the liquid crystal layer in the transmission region (Embodiment 4) FIG. 8A is a diagram of an active array substrate O: \ 92 \ 92808.DOC -21-1240130 of the liquid crystal display of Embodiment 4 of the present invention The plan view of the prime part. Figure 8B is a cross-sectional view taken along line A_A in Figure 8A. ^ The king of the array of this example includes a gate line 4, a data line 0, a driving element 43, and a pole 44. , Storage capacitor electrode 45, gate insulating film, insulating substrate 47, contact hole 48, interlayer insulating film, reflective pixel electrode 50, and transmissive pixel electrode η. Each storage capacitor electrode 45 is electrically connected to a corresponding The drain 44 is overlapped with the gate line 41 through the gate insulating film 46. The contact hole 48 penetrates the intermediate layer insulating film 49 and is connected to the transmission element "51 storage capacitor electrode 45. Each pixel of the active matrix substrate of the 逑 structure is Including reflective pixel electrode 50 and transmissive pixel electrode 51. Therefore, as shown in FIG. 8B, each pixel includes a reflective electrode region, including a reflective pixel electrode 50, which reflects external light, including a transmissive pixel electrode 5 1 , Which transmits light from the backlight.

FIG. 9 is a cross-sectional view of the liquid crystal display device of this embodiment, including the active array substrate shown in FIGS. 8A and 8B. The liquid crystal display device also includes a color filter layer 53, a counter electrode 54, a liquid crystal layer 55, a counter film 56, a polarizing plate 57, and a backlight 58. The child transmits the pixel electrode 51 (transmission electrode region) so that The light transmission < region has no contribution to the brightness of the panel when the backlight 58 is turned off. Conversely, the area where the reflective pixel electrode (reflective electrode area) reflects external light can increase the brightness of the panel regardless of whether the backlight 58 is on / off. Therefore, in each pixel, the area of the reflective electrode region is larger than the area of the transmissive electrode region.

O: \ 92 \ 9280S.DOC -22-1240130 In this embodiment, the reflective pixel electrode 50 is located on the corresponding transparent pixel electrode 51 so as to be electrically connected to each other, so that the reflective pixel electrode 50 and the The same signal is applied to the transmissive pixel electrode 51. Or the reflective pixel electrode 50 and the transparent pixel electrode 51 are not electrically connected to each other to receive different signals for different displays. In the liquid crystal display device shown in Fig. 9, the fractional light from the backlight beam incident on the reflective pixel electrode 50 cannot be used as display light. To overcome such a problem, the modified liquid crystal display device shown in FIG. 10 includes a micro lens 59 and a micro lens protective layer 60 for each pixel. With this structure, the light from the backlight 58 is collected via the micro lens 59 on the portion of the transmissive electrode region where the reflective pixel electrode 50 is not formed, and the amount of light transmitted through the transmissive region is increased to improve the TF immunity. FIG. 11A is a plan view of a pixel sub-pixel of a liquid crystal display device replacement active matrix substrate according to Embodiment 4 of the present invention. Figure 丨 丨 B is a sectional view taken along the line 丨 丨 A. In the active array substrate shown in Figs. 11A and 11B, the areas of the transmissive pixel electrode 51 and the areas of the reflective pixel electrode 50 of each pixel are opposite to those shown in Figs. 8A and 8B. The ratio of the area of the area of the reflective pixel electrode 50 to the area of the area of the transparent pixel electrode 51 can be appropriately changed. When the active array substrate shown in FIGS. 8A and 8B is compared with the one shown in FIGS. 11A and 11B, the advantages of the active array substrate shown in FIGS. 8A and 8B are because the reflective pixel electrode 50 is located at the driving element 43. From above, external light is prevented from entering the driving element 43 ′, and because the region of the transmissive pixel electrode 5 丨 is located at the center of each pixel, it is easier to form a micro lens 59 for collecting light.

O: \ 92 \ 92808.DOC -23- 1240130 In this embodiment, because the reflection area and the transmission area are located in a pixel, the pixel aperture ratio of the pixel is as large as possible. In order to meet such a requirement, this embodiment adopts a south mirror hole ratio structure, in which an interlayer insulating film 49 including an organic insulating film is interposed between the pixel electrode and the gate line 4 and the source line 43. Other structures can also be used. (Embodiment 5) FIG. 12A is a plan view of one pixel of an active array substrate i of a liquid crystal display device according to Embodiment 5 of the present invention. Fig. 12B is a sectional view taken along the line c_c of Fig. 12A. In the active-array liquid crystal display device of Embodiment 5, a reflective pixel electrode% is formed on the inclined or recessed portion and the raised portion of the interlayer insulating film 494. The external light is thus reflected from the reflective pixel electrode 50 in a wide orientation range, so the visible angle becomes wider. In this male embodiment, the intermediate layer insulating film 49 is located at the gate line 4 丨 and the source line M. The upper part is thickest, and the portion located at the drain 44 is completely etched to form a slanted or recessed portion and a raised portion. This situation eliminates the need to form a contact hole for electrically connecting the drain 44 to the reflective pixel electrode 5G, and prevents the orientation of the liquid crystal molecules from being disordered due to the steep order of the contact hole. In this case, the mirror hole ratio is increased. In the embodiment, the electrode 44 is a transparent electrode made of indium tin oxide, and is used as a transmission pixel electrode. The inclination angle of the inclined portion, or the concave portion and the hump of the interlayer insulating film 49 should be small enough to form an alignment film on the formed substrate and rub it. Therefore, the optimal conditions should be determined based on the individual friction conditions and the type of liquid crystal molecules.

O: \ 92 \ 92808.DOC -24-1240130 In this embodiment, as in Embodiment 4, a micro lens can be provided under the drain 44 as the transmissive pixel electrode 51 to improve the display brightness when the backlight is connected. (Embodiment 6) FIG. 13A is a plan view of a pixel array of an active array substrate of a liquid crystal display device according to Embodiment 6 of the present invention. Fig. 13B is a sectional view taken along line D-D of Fig. 13A. In this embodiment, a reflective pixel electrode 50 is formed at the same height as the gate line 41 in the phase synchronization frame. With this structure, since the individual steps for forming the reflective pixel electrode 50 are not required, it is not necessary to increase the number of steps and the manufacturing cost. In this embodiment, the reflective pixel electrode 50 is not connected to the pole 44 constituting the driving element 43, but is only used to reflect external light. The transmissive pixel electrode 51 is used as an electrode for driving the liquid crystal. In other words, the light transmittance of the light reflected by the reflective pixel electrode 50 is controlled by controlling the liquid crystal layer using the voltage of the transparent pixel electrode 51. If no human signal is input to each of the reflection pixel electrodes, a floating capacitance is generated between the reflection pixel electrode 50 and the corresponding electrode 44 or the transmission pixel electrode 51. To avoid this problem, the reflective pixel electrode 50 should have a signal that does not affect the display. By connecting each reflective pixel electrode 50 to an adjacent gate line, it is possible to avoid the formation of a floating lightning cross, and the storage capacitor is formed between the reflective pixel electrode 50 and the corresponding drain electrode 44. In this embodiment, as in Embodiment 4, the micro-lens can focus light on the transparent pixel electrode 'to improve the display brightness when the backlight is communicated.

O: \ 92 \ 92808.DOC 1240130 In this case, because the reflection area and the transmission area are also formed in the same factor, the d pixel < the aperture ratio is as large as possible. Mirror-to-hole ratio structure, in which the use of organic ^ mm requirements' is high. Organic insulation films for other structures can be used as the interlayer insulation film. (Embodiment 7) FIG. 14A is a plan view of an active matrix substrate of a liquid crystal display device according to Embodiment 7 of the present invention. Figure IX is a sectional view taken along line E_F and UA of Figure UA. In the column f, the reflective pixel electrode 50 is formed at the same height as the source line ^. With this structure, since the reflective pixel electrode 5G 'can be formed when the source electrode 形成 is formed, the number of steps and the manufacturing cost are not increased. In this example, 'gj is a high mirror hole ratio structure which penetrates the interlayer insulating film 49', so the reflective pixel electrode 50 is only used to reflect external light. Only the transmissive pixel electrode 51 is used as an electrode for driving the liquid crystal. The difference between this embodiment and Embodiment 6 is that the reflective pixel electrode 50 of each drawing is electrically connected to the corresponding wave electrode 44. In another case, the intermediate electrode 49 is not formed on the electrode 44 and the electrode 44 is used as a transmissive pixel electrode. The reflective pixel electrode 50 is also used to drive liquid crystal molecules. In this example, as in Example 4, a micro lens can be provided to focus the light on the transmissive pixel electrode 51 and improve the display brightness when the backlight is connected. Also, in this embodiment, because in a pixel The formation of the reflection area and the transmission area is arguably larger than 彳 m. In order to satisfy such a condition, a high mirror hole ratio structure using an organic insulating film as an interlayer insulating film is adopted. Can also be used

O: \ 92 \ 92808.DOC -26- 1240130 Other structures. Therefore, in Embodiments 4 to 7 of the present invention, an active matrix liquid crystal display device capable of switching between a reflective type and a transmissive type is obtained. The liquid crystal display device can be switched between a transmissive type and a reflective type by a user according to a use condition, and provides sufficient brightness irrespective of the use condition 'while reducing energy consumption and extending use time. Also available is a transmissive / reflective switchable active-array liquid crystal display device that can be used as a reflective liquid crystal display device in bright environments and a transmissive liquid crystal display device in dark environments. Because the reflective pixel electrode and the transmissive pixel electrode are electrically connected to each other, it is not necessary to provide an interconnection for driving signals separately. This simplifies the structure of the active array substrate. A reflective pixel electrode is formed on the upper layer of the driving element to prevent external light from entering the driving element. The transmissive pixel electrode has no contribution to the brightness of the panel when the backlight is turned off, and the reflective pixel electrode contributes to the brightness of the panel regardless of whether the backlight is on / off. Therefore, by increasing the area of the reflective pixel electrode, even if the backlight is cut off or less light is emitted, the display brightness can be stabilized. Light from the back light that is blocked by the reflective pixel electrode, gate line, etc. can be expected on the transmitted pixel electrode. In this way, the brightness of the display device can be increased without increasing the brightness of the backlight. The reflective pixel electrode can reflect foreign light in a wide orientation. Therefore, a wider viewing angle can be obtained. O: \ 92 \ 92808.DOC -27- 1240130 The reflective pixel electrode can be formed without adding additional steps. This prevents the number of steps and manufacturing costs from increasing. The reflective pixel electrode can be electrically connected to the closed loop line. This prevents the floating capacitor from being generated, and can form a storage capacitor having an electrode. The reflective pixel electrode may have the same signal as the counter electrode. This prevents the occurrence of floating valleys. Moreover, the reflective pixel electrode can be used to form a storage capacitor for use in a voltage applied to the pixel electrode. (Embodiment 8) In Embodiment 8, the reflection / transmission type liquid crystal display device of the present invention is described. First, the principle of generating interference colors in the liquid crystal display device of Embodiment 8 will be described. FIG. 23 is a conceptual diagram illustrating the generation of interference colors. Light is incident on the glass substrate. The incident light is reflected by the reflection film and output from the glass substrate. In the foregoing case, when the light incident at the incident angle θ i is reflected from the convex and concave portions of the reflective film and output at the output angle 0 °, it is considered that an interference color is generated. The light path difference between the two reflected beams 5 is expressed by the following formula (1): δ = Lsinei + h (l / cosei, + .1 / coseo,) · η — \. {Lsineo -rh (t: a ^ 6i7 十 taneo1 ) sir.6o ·} = I ^ Csinei-sineo) h {(l / c〇s9lf ^ l / 〇〇s3o \) * n (tanei 1 +) sin6o} ..... (工), where Θ i is the incident angle of the concave portion of the reflective film, β O ′ is the concave portion of the reflective film, L is the distance between the incident points of the rain beam on the glass substrate, and h is the reflection of the concave portion of the reflective film The point of the beam is relative to the reflection

O: \ 92 \ 92808.DOC 1240130 The height of the point where the concave portion of the reflective film reflects another beam, and n is the refractive index of the glass substrate. Because formula (1) can be calculated only when 0 0 〇 and 5 »0 ′, so when each 0 and 0i ′ = 0〇′2, the optical path difference simplifies to the following formula (2): 6 = h {2n / cos0f-2tan0? · sinG} ...... (2) When any wavelengths λ 1 and λ 2 are considered, the I output beam reflected from the convex part and concave trowel is 1 = When 111 ± 1/2 (111 is an integer), they weaken each other, and strengthen each other at 5 / λ 2 = m. Therefore, the following formula (3) is obtained: δ = (1 / λ1-1 / λ2) = 1/2. (3) The above formula (3) is also expressed as the following formula (4): δ = = (λ1 · λ2) / 2 · (λ2- λΐ) ....... (4) is the reason. According to the foregoing formulas (2) and (4), the height h can be expressed as the following formula (5) · H " 1/2 · {(λΐ · λ2) / (λ2-λΐ)}; (cose ^ / (2π ^ 23 ^ 6 »-sine)) ----. (5) According to 岫 to avoid If the interference color is generated, the reflective surface of the reflective film should have a continuous wave shape. In this K embodiment, in order to form the reflective film, at least two convex portions having different heights are formed on the substrate and formed on the substrate. Cover the ridges. The hydrated resin film of the trowel is formed on the polymer resin film.

O: \ 92 \ 92808.DOC -29- 1240130 Reflective film made of materials with high reflection efficiency. The manufactured reflective film can be used for a reflective portion of a reflective / transmissive liquid crystal display device. Since the reflecting portion has a reflecting surface of a continuous wave type, interference with light reflected from the reflecting portion can be prevented. When the bumps are formed optically using a photomask, they can be formed with good reproducibility by setting the same illumination conditions. In the reflection / transmission type liquid crystal display device of this embodiment, no bumps are formed in the transmission portion made of a material having high transmission efficiency to improve the transmission efficiency. However, even if a raised portion is formed in the transmitting portion, it is possible to display with transmitted light. Fig. 15 is a sectional view of a reflection / transmission type liquid crystal display device according to an embodiment of the present invention. Referring to FIG. 15 ', an interlayer insulating film 61a is formed on a glass substrate 61. Highly convex portions 64a and low convex portions 64b are arbitrarily formed on the portion of the glass substrate 61 located under the reflective electrode 69 having a reflecting function. The high ridge portion 64 a and the low ridge portion 64 b are covered with a polymer resin film 65. Since the high ridge portion 64a and the low ridge portion 64b are formed on the glass substrate 61 through the gate insulating film 61a, the polymer resin film 65 is located in the high ridge portion 64a and the low ridge portion The upper surface of the portion on 64b has a continuous waveform. The polymer resin film 65 is located on almost all surfaces of the glass substrate 61, and not only in the lower region of the reflective electrode 69. The reflective electrode 69 is made of a material having a high reflection function, and is located on a portion where the polymer resin film 65 has a continuous wave shape and is located on the high ridge portion 64a and the low ridge portion 64b. O: \ 92 \ 92808.DOC -30- 1240130 The transmissive pole 6 8 is also located on the glass substrate 6! Through the gate insulating film 61 a and is separated from the reflective electrode 69. The transmission electrode 68 is made of a material having a high light transmission function, such as indium tin oxide (IT0). The polarizing plate 90 is attached to the back of the manufactured active array substrate when the device is a module. Thereafter, the backlight 91 is placed on the polarizing plate 90. Part of the light emitted from the backlight 91 and directed toward the transmission electrode 68 passes through the child transmission electrode 68 and the subsequent active array substrate. However, a part of the light directed to the reflective electrode 69 is reflected from the back surface of the reflective electrode 69 to the backlight ... Since the back surface of the reflective electrode 69 has a continuous wave type, the reflected light from the reflective electrode 69 is scattered as shown by the arrow in FIG. 15. This scattered light is reflected from the known light 91 to the active array substrate. A part of the light passes through the transmissive electrode 68 and the subsequent active array substrate. Therefore, 'in an active array substrate including the reflective electrode 69 having the aforementioned shape', the light from the backlight and reflected by the reflective electrode 69 can be used for display. Unlike conventional transmissive liquid crystal display devices, this allows more efficient use of light than actual mirror holes than predicted. In detail, if the reflective electrode has a flat shape and mainly produces a rectangular reflection, it is difficult to reflect again and pass through the transmissive electrode 68. However, in this embodiment, a reflective electrode 69 having a continuous wave type is used to return the reflected light to the sub-layer of the backlight which is located under the transmissive electrode 68, and to use the light more effectively. FIG. 16 shows that when the reflectivity of the reflective electrode 69 and the backlight 91 is about 90% compared with a standard white board, and the transmittance of the polarizing plate 90 is about 40%, the mirror-to-hole ratio relative to the transmittance and reflection Sexual relationship diagram. This relationship is calculated assuming that the pixel electrode covers the entire display surface, irrespective of the existence of the busbars and active components O: \ 92 \ 92808.DOC -31-1240130. As shown in FIG. 16, the reflectivity of the reflective electrode 69 used for radiating light on the base surface from an outside person is obtained by multiplying the reflectivity of the reflective electrode 69 by the area of the reflective electrode 69 with respect to the entire pixel. Calculated as the ratio of electrode area. The transmittance used for the transmission electrode 68 from the backlight 91 is not exactly equal to the mirror hole ratio a (ie, the ratio of the area of the transmission electrode 68 to the overall pixel electrode area), but is the value b, including from the backlight. The light component reflected by the reflective electrode 69 can be used as a display added to the mirror hole ratio a. Therefore, unlike conventional transmission type liquid crystal display devices, since the light from the backlight 91 and reflected by the reflective electrode 69 is also used, light can be used more efficiently than the actual mirror hole than predicted. Fig. 17 is a graph showing the relationship between the aperture ratio and the transmission efficiency (transmittance / mirror ratio). As shown in FIG. 17, according to the calculation, when the mirror-to-hole ratio is 40%, the utilization rate of the light from the backlight 91 reflected by the reflection electrode 69 is as high as directly passing from the backlight 91 through the transmission electrode 68. The light intensity is 50/0. According to the calculated value shown in FIG. 17, it is also found that the larger the ratio of the area of the reflective electrode 69 to the area of the entire pixel electrode, the higher the utilization rate of the light reflected by the reflective electrode 69. A specific example of the reflective / transmissive liquid crystal display device of Embodiment 8 will be described below. FIG. 18 is a plan view of a reflective / transmissive liquid crystal display device according to Embodiment 8 of the present invention. 19A to 19F are cross-sectional views taken along the line F-F of Fig. I8, illustrating a method of manufacturing the liquid crystal display device of this embodiment. 18 and 19F, an active array substrate of the reflective / transmissive liquid crystal display device includes a plurality of gate bus lines 72 as scanning lines and a plurality of O: \ 92 \ 92808.DOC -32- 1240130 as signals The source busbars 74 of the lines cross each other. In each rectangular region surrounded by the adjacent closed-pole busbar 72 and the adjacent source-busbar 74, a transmissive electrode M made of a material with high light transmission efficiency and a highly reflective material are placed. Materials made of reflective electrodes. The transmissive electrode 68 and the reflective electrode 69 constitute a pixel electrode. The idler electrode 73 extends from the gate g current drain line 72 to a pixel electrode located at a corner of each of the pixel electrode forming regions. A thin film transistor (TFT) is connected to the terminal of the gate electrode 73 as a switching element. The inter electrode 73 itself constitutes a part of the thin film transistor 71. The thin film transistor 7i is located on the gate electrode on the glass substrate 61, as shown in FIG. 19F. The gate electrode 73 is covered with a gate insulating film 6; u, a semiconductor layer 77 is formed on the open electrode insulating film 6U to cover the gate electrode 73 through the gate insulation: 61a. A pair of contact layers 78 are formed on a side portion of the semiconductor layer 77. The source electrode 75 is located on the -contact layer, and the source busbar 74 corresponding to the electrical material is on the source bus bar 74. A side portion of the source electrode 75 overlaps with the gate electrode 73 according to an insulation method to form a part of the thin film transistor 71. A drain electrode%, which also constitutes a part of the thin film transistor 71, is formed on another contact layer 78, away from the source electrode 75 and overlapping with the gate electrode according to the insulation method. The drain electrode 76 is electrically connected to the pixel electrode via the bottom electrode 81a. The storage capacitor is formed by forming the lower layer electrode 81a, and a gate bus line 72 through a gate insulating film 61a and a neighboring pixel electrode for a subsequent pixel row. The bottom electrode 8a can be located on a substantially entire area, which forms a raised portion as described below, so as to make the influence of forming the layer uniform.

O: \ 92 \ 92808.DOC -33-1240130 Under each reflection electrode 69, a high ridge portion 64a and a low ridge portion 64b and a top polymer resin film 65 are formed. The upper surface of the polymer resin film 65 has a continuous wave pattern that reflects the existence of the ridges 64a and 64b. The polymer resin film 65 is formed on the surface of the substantially entire glass substrate 61, and is not located only in the area under the reflective electrode 69. In this embodiment, as the polymer resin film 65, OFPR-800 manufactured by Tokyo Ohka Co., Ltd. is used, for example. The reflective electrode 69 is located on a portion of the polymer resin film 65 having a continuous wave shape, and is located on the high ridge portion 64a and the low ridge portion 64b. The reflective electrode 69 is made of a material having high reflection efficiency, such as A. The reflective electrode 69 is electrically connected to the corresponding drain electrode 76 through a contact hole 79. In the reflective / transmissive liquid crystal display device of this embodiment, the transmissive electrode 68 is separated from the reflective electrode 69. The transmissive electrode 68 is made of a material having a high transmissivity such as rhenium tin oxide. A method for forming the reflective electrode 69 and the transmissive electrode 68 will now be described with reference to Figs. 19A to 19F, which are main parts of the reflective / transmissive active array substrate 70. Figs. First, as shown in FIG. 19A, a plurality of gate bus bars 72 (see FIG. 18) made of a material such as Cr, Ta are formed on the glass substrate 61, and extend from the gate bus bars 72. A gate insulating film 61a made of a material such as SiNx, SiOx, etc. is formed on the entire surface of the glass substrate 61 to cover the gate busbar 72 and the gate electrode 73. O: \ 92 \ 92808.DOC -34-1240130 is formed on the gate insulating film 61 a on the gate electrode 73. Amorphous silicon (a-Si), polycrystalline silicon, Cd ~

Semiconductor layer 77 made of CdSe temple material. A pair of contact layers 78 made of a-Si and the like are formed on the two sides of each semiconductor layer 77. Sources made of materials such as A1 are made of Ti, Mo, A1 and other materials on one of the contact layers 78 to form an electrode 75, and a drain electrode 76 made of materials is formed on the other contact layer 78. . In this embodiment, a product of No. 7059 with a thickness of hi mm manufactured by Corning Inc. is used as the material of the glass substrate 61. As shown in Fig. 19B, a metal layer 81 constituting a part of the source bus line 74 is formed by sputtering. The metal layer 81 can also be used to form a bottom electrode. Thereafter, as shown in FIG. 19C, the indium tin oxide layer 80, which also forms a part of the source sink line 74, is formed by forming a pattern and forming a decoration pattern. Therefore, in this embodiment, the source region drain line 74 has a two-layer structure composed of a metal layer 81 and an indium tin oxide layer. The advantage of the double-layer structure is that even if the metal part of the source busbar 74 is defective, the electrical connection of the source busbar 74 can be maintained by the indium tin oxide layer 80. This reduces the possibility of disconnection of the source bus bar 74. The indium tin oxide layer 80 is also used to form the transmissive electrode 68. This makes it possible to form the transmissive electrode 68 at the same time as the source bus line 74 is formed, thereby preventing the number of layers from increasing. After that, as shown in FIG. 19D, the photosensitive resin anti-residue film is used to form the circular raised projections 64a and 64b with f stomach round sections on the area where the reflective electrode 69 is to be formed. It is preferable that the voltage is not effectively located on the transmissive electrode 以 in order to effectively apply a voltage to the liquid crystal layer. However, when the ridges 64 & and 64] 3 were formed on the transmissive electrode 68, there was also no significant effect on the optical O: \ 92 \ 92808.DOC -35-1240130 which will be briefly described below with reference to FIGS. By spin coating on glass substrate 61 (actual

It is better to be in the range of about 3,000 revolutions per minute. This method of bulging is divided into 64a and 64b. First, as shown in FIG. 20A, the formation of the reflective electrode area is described as follows: the transfer coating method, and the rotation speed is about 5,000 to this embodiment. The embodiment is 1 500 revolutions per minute 'after 30 seconds' to obtain 2 · 5 micron thickness. After that, the upper glass substrate 61 having the resist film 62 is pre-baked under 90 °, for example, 30 minutes. Thereafter, as shown in FIG. 20B, a photomask 63 is placed on the resist film 62. The photomask has a shape as shown in FIG. 21 and includes, for example, two circular holes 63 a and 63 b penetrating through the plate 6 and rainbow. The photomask 63 is then illuminated from above as shown by an arrow. The photomask of this embodiment has a circular hole 63a having a diameter of 5 m and a circular hole 'having a diameter of 3 m, which are arbitrarily arranged. The gap between any adjacent patterned holes should be at least about 2 microns. However, if the gap is too large, it will be difficult to obtain a continuous wave pattern for the polymer resin film 65 to be formed on the upper layer later. The formed substrate is developed using a developer having a concentration of 2.38%, such as NMD-3 manufactured by Tokyo Ohka Co., Ltd. As a result, as shown in FIG. 20C, several types of micro-protrusions 64a 'and 64b' having different heights are formed in the reflective electrode region of the glass substrate 61. The top edges of the raised portions 64a1 and 64b 'are square O: \ 92 \ 92808.DOC -36-1240130 / solid N from pattern holes 63a with a diameter of 5 microns and pattern holes 63b with a diameter of 3 microns. Guangcheng The ridges and convex parts with a height of 2.48 microns and the ridges with a height of 164 microns are divided into 64b. The height of 6 / 卩 生 卩 # 分 64a 'and 64b' can be changed by changing the pattern holes 63a and 63b / exposure time and development time. The sizes of the pattern holes 63a and 63b are not limited to those described above. Thereafter, as shown in FIG. 20D, the upper layer has the bulged portions 64a and 64b, and the glass substrate 6 is about 200. 0 ° C for one hour. This softens the square-shaped top edges of the raised portions 6 and b, and forms raised portions 64a and 64b having a substantially circular cross-section. As shown in FIG. 19E, a polymer resin is applied to the formed glass substrate 6 by a spin coating method to prepare a wiring pattern to form a polymer resin film 65. The spin-coated OFPR-800 material is used as the polymer resin at a rotation speed in the range of preferably about 2,000 to about 3000 revolutions per minute. In this embodiment, the spin coating is performed at a speed of 2000 rpm. According to this method, a polymer resin film 65 having a continuous upper surface on the glass substrate 6 is obtained, which is a flat surface having no raised portions. As shown in Fig. 19F, the reflective electrode manufactured by A1 is formed on a predetermined portion of the polymer resin film 65 by, for example, a sputtering method. Suitable materials for reflective electrodes include Ta, Al, Cr, and Ag with high reflection efficiency in addition to A1 and A1 alloys. The thickness of the reflective electrode 69 is preferably in the range of about 0.01 to about 10 microns. A polarizing plate (not shown) is attached to the back of the active array substrate manufactured in this embodiment. The backlight is placed on the outer surface of the polarizer. O: \ 92 \ 92808.DOC -37- 1240130 If the A1 film is formed after removing part 4 of the polymer resin film 65 located on the transmissive electrode 68, electric corrosion will occur. Therefore, a portion of the polymer resin film 65 on the transmissive electrode 68 should be formed after the reflective electrode 69 is formed. This removal can be performed by ashing, and at the same time, the portion of the polymer resin film 65 located on the electrode for connecting the driver located on the edge of the active array substrate 70 is removed. This improves the efficiency of the process, and can effectively apply a voltage to the liquid crystal layer. If a polymer resin film 65 is not used in the method for forming the raised portion, a layer such as Mo may be formed between the transmissive electrode 68 made of indium tin oxide and the reflective electrode 69 made of rhenium to prevent Generates electrical corrosion. The formed reflective electrode 69 is made of a material having a high reflection efficiency and has a continuous wave upper surface because the bottom polymer resin film 65 has a continuous wave shape as described above. In this embodiment, a transmission electrode 68 is formed when the source busbar 74 is formed. When the source bus bar 74 is a single-layer structure including the metal layer $ 1 instead of the aforementioned double-layer structure including the metal layer 81 and the indium tin oxide layer 80, the transmissive electrode 68 may converge with the source. The wiring lines 74 are formed individually. The wavelength dependence of the light reflected from the reflection electrode 69 having a continuous wave type and made of a material with high reflection efficiency is measured in the manner shown in FIG. 22. The structure for measuring is formed by simulating the conditions of a reflective electrode 69 equivalent to an actual liquid crystal display device during actual use. In detail, the simulated glass 66 with refractive index is substantially equal to the refractive index of the actual liquid crystal layer. It is attached to the active array substrate 70, and a UV-curable adhesive 67 with a refractive index of .5 is used to form a reflective electrode on the upper layer. 69 和 Transmission electrode 67. O: \ 92 \ 92808.DOC -38- 1240130 In terms of the "quote," > 1-quantity system, 'the light source L1 is placed so that the incident light L1' is relative to the simulated glass 66 normal line, and is incident at an incident angle 0 i, Photomultiplier. It is arranged to capture a fixed-angle light beam reflected at an output angle of 0 with respect to the normal m2. With the foregoing structure, the photomultiplier captures the scattered light beam L2 as the incident light beam L1 ', which is reflected at an incident angle 0 {scattered light incident on the simulated glass 66 at an output angle 0 °. Tendons are measured at 0 i = 30. And 0 0 = 20. It is performed under the conditions to prevent the photomultiplier L2 from capturing the normal reflected light beam emitted from the light source L1 and reflected from the% surface of the simulated glass. FIG. 24 is a graph showing the wavelength dependence of the reflected light in this embodiment. As shown in Fig. 24, the reflected wavelength dependency is difficult to recognize in this embodiment, and it turns out that a good white display is obtained. In this embodiment, the shapes of the patterned holes 63a and 63b of the photomask 63 are circular. Other shapes such as rectangular, oval, and bar shapes can also be used. In this embodiment, ridges 6 乜 and 6 仆 having different heights are formed. Alternatively, a raised portion having a single height or one having three or more different heights may be formed to obtain a reflective electrode having good reflection characteristics. However, 'it was found that when bumps having two or more different heights are formed instead of bumps having a single height, a reflective electrode having better wavelength dependence of reflection characteristics can be obtained. If it is determined that only the convex portions 64a and 64b can be used to obtain the upper surface 'having a continuous wave pattern, the polymer resin film 65 need not be formed. Only the resin film 62 (see FIGS. 20B and 20C) is formed to obtain an upper surface having a continuous wave pattern, and a reflective electrode 69 is formed on the upper layer. In this case, the step of forming a polymer resin film O: \ 92 \ 92808.DOC -39-1240130 6 5 can be omitted. In this embodiment, OFPR-800 manufactured by Tokyo Ohka Co., Ltd. is used as the photosensitive resin material. Any other positive or negative photosensitive resin material that can be used to make a wiring pattern by an exposure method can also be used. Examples of the photosensitive resin material include: OMR-83, OMR-85, ONNR-20, OFPR-2, OFPR-830, and OFPR-500 manufactured by Tokyo Ohka Co., Ltd .; 1400 manufactured by Shipley Co. -27; Photoneath manufactured by Toray Industries, Inc .; RW-101 manufactured by Sekisui Fine Chemical Co., Ltd .; and R101 and R633 manufactured by Nippon Kayaku KK ° In this embodiment, a thin film transistor 71 is used As a switching element. The invention can also be applied to active array substrates using other switching elements such as metal insulator metal (MIM), diodes, and varistor. Therefore, as described above, in the liquid crystal display device and the method of manufacturing a liquid crystal display device of Embodiment 8, a reflective electrode made of a material having a high reflection efficiency is formed to have a continuous wave type. This reduces the wavelength dependency of the reflectivity, so that a good white display is obtained by reflection without causing interference colors. Since the ridges and convexes are formed on the substrate by an optical technique using a photomask, good reproducibility can be confirmed. The wavy upper surface formed by the reflective electrode can also be obtained with good reproducibility. A transmission electrode made of a material having a high light transmittance is formed at the same time as the source bus line is formed. A transmissive electrode of a reflective / transmissive liquid crystal display device can be formed without increasing the number of steps compared to a conventional liquid crystal display device. By forming a continuous wave pattern for the reflective electrode, it is possible to use light more efficiently than the actual mirror hole O: \ 92 \ 92808.DOC -40-1240130 than expected.丄 According to the liquid crystal display device of this embodiment, a reflective portion made of a retroreflective material and a transmissive portion made of a material with high light transmission efficiency are formed in a display pixel. With this structure, when the environment is dark, the device is used as a transmissive liquid crystal display device, which uses the light from the backlight to penetrate the transmissive area "light to display an image." When the environment is relatively dark, the device is used as a reflective / transmissive liquid crystal display device, which simultaneously uses the light from the backlight to penetrate the transmissive area and the light reflected from the reflective area including a film with a relatively high reflectivity _No video. When the environment is bright, the device functions as a reflective liquid crystal display device that uses light reflected from a reflective area including a film having a relatively high reflectivity to display an image. In other words, according to this embodiment, the pixel electrode of each pixel includes a reflection region made of a material with high reflectivity and a transmission region made of a material with high light transmission efficiency. Liquid crystal display device with good light utilization efficiency and superior productivity. That is, in this embodiment, the upper surface of the reflective region made of a reflective material has a continuous wave pattern. It prevents the specular phenomenon from occurring under the astigmatism device which is not provided when the reflection area is flat, and the paper white display is obtained. In this example, a photosensitive polymer resin film having a plurality of raised and convex portions is located under a reflective region made of a reflective material. The use of this structure 'does not affect the display even if there is a change in the continuous smooth concave portion and the convex portion. Therefore, the liquid crystal display device can be manufactured with good productivity. The transmission region made of a material with high light transmission efficiency depends on forming the drain region of the source region.

O: \ 92 \ 92808.DOC -41- 1240130 formed at the same time. This greatly shortens the manufacturing process of the liquid crystal display device. A protective film is formed between the transmission region and the reflection region. This prevents electricity from being generated between the transmission area and the reflection E. The reflective material remaining on the transmissive area and the terminal electrode is removed at the same time as the wiring pattern is made in the reflective area. This greatly shortens the manufacturing process of the liquid crystal display device. In this embodiment, the light radiated from the back light passes through the transmission area and leaves the substrate, and is reflected back to the back light from the back surface of the reflection area, and then reflected to the substrate. A portion of the re-reflected light passes through the transmission area and leaves the substrate. Because general reflection occurs mainly when the reflection area is a flat surface, it is traditionally difficult for the re-reflected light to effectively pass through the transmission area. However, in this embodiment, because the reflection region has a continuous wave type, the light radiated from the backlight is scattered, so that the reflected light is effectively returned to the Deng points where the backlight is located below the transmission region. Therefore, unlike conventional transmissive liquid crystal display devices, light can be used more efficiently than conventional mirror holes than predicted. (Embodiment 9) FIG. 25 is a partial cross-sectional view of a transmissive / reflective liquid crystal display device 100 according to Embodiment 9 of the present invention. Referring to FIG. 25, the liquid crystal display device 100 of FIG. 25 includes the active array substrate 70 (corresponding to the F'_F 'cross section) shown in FIG. 18, a counter substrate (color filter substrate) 160, and a liquid crystal layer interposed therebetween 140. The transmissive / reflective active array substrate 70 includes a plurality of inter-electrode bus lines 72 as scanning lines and a plurality of source bus lines 74 as signal lines, which are located on an insulating glass substrate 61 and intersect each other. . In each of the adjacent gate busbars 72 and the adjacent source busbars 74

O: \ 92 \ 92808.DOC -42- 1240130 In the region of the earth, the transmission electrode 68 made of a material with high light transmission efficiency and the reflective electrode 69 made of two materials with high reflection efficiency are placed. The transmissive layer 68 and the 4-reflection envelope 69 form a pixel electrode. The pair of substrates (color filter substrates) 160 includes a color filter layer 164 sequentially formed on an insulating glass substrate 162 and a transparent electrode 166 made of a material such as indium tin oxide. A vertical alignment film (not shown) is formed on the surfaces of the substrates 70 and 60 facing the liquid crystal layer 140. In order to define the orientation of the liquid crystal molecules oriented by the electric field, the vertical alignment film is rubbed in one direction to provide a pre-elevation angle on the liquid crystal molecules. The liquid crystal layer 140 uses a nematic liquid crystal material having negative dielectric anisotropy (for example, MJ manufactured by Merck & Co., Inc.). Each pixel of the smallest display unit of the liquid crystal display device 100 includes a reflective region 120R bounded by a reflective electrode 69 and a transmissive region 120T defined by a transmissive electrode 68. The thickness of the liquid crystal layer 140 is dr in the reflection region 120R and dt (dt = 2dr) in the transmission region 120T. It is used for the light path of the display beam (the reflected beam in the reflection region and the transmission region The transmitted light beams are substantially equal to each other. Although dr = 2dt is a preferable case, it can be appropriately determined according to the display characteristics. The prerequisite is dt > dr. dr is generally about 4 to about 6 microns, and dr is about 2 to about 3 microns. In other words, steps of about 2 to about 3 microns are formed in each pixel region of the active array substrate 70. When the reflective electrode 69 has a concave and convex shape surface as shown in Fig. 25, the average thickness should be dr. In this case, the transmission / reflection type liquid crystal display device 100 includes two types of regions (a reflection region and a transmission region), in which the thickness of the liquid crystal layer 140 is different from each other. In this embodiment, the active array substrate 70 includes a reflective region i20r and a transmissive region 1201, which are different in height from the side facing the liquid crystal layer 140.

O: \ 92 \ 92808.DOC-43- 1240130 Actually manufacture a liquid crystal display device (diagonal • 8.4 inches) with the structure shown in Figure 25 to perform 64 grayscale display to evaluate the display characteristics of the device (light transmission Degree and reflectivity). The evaluation results are shown in FIG. 26. This liquid crystal display device was manufactured under the following conditions. In a pixel, the ratio of the area of the transmission area 120τ to the reflection area 12R is 4: 6. The transmissive electrode 68 is made of indium tin oxide and the reflective electrode is made of A1. The thickness dt of the liquid crystal layer 14o in the transmissive region 12〇τ is set to about 5.5 micrometers, and the thickness of the liquid crystal layer 14o in the 120 ft. Reflective region is set to about 3 micrometers. The transmittance of the liquid crystal display device in the transmission mode using the light from the backlight is measured using the MB-5 manufactured by Topcon Co., while the liquid crystal display device is used in the reflection mode to reflect the ambient light. tsuka

LCD-5000 manufactured by Electronics Co., Ltd. is measured using an integrating sphere. As shown in FIG. 26, the changes in reflectivity and light transmittance (individually, solid lines and dotted lines in FIG. 26) in the 64 gray scale display substantially coincide with each other. Therefore, even if the transmission mode display using the light from the backlight and the reflection mode display using the ambient light are performed at the same time, a gray scale display with sufficient display quality can be obtained. The comparison between the transmission mode and the reflection mode is about 200 and about 25 respectively. The evaluation results of color reproducibility will be described below. Figures 27 and 28 are the chromaticity diagrams of the conventional transmissive liquid crystal display device and the transmissive / reflective liquid crystal display device of this embodiment under different ambient light conditions. These liquid crystal display devices all use the same backlight. As shown in Figure 27, when the ambient light's illuminance on the display screen increases from 0x to 8,000 lx and to 17,000 lx, the color reproducibility of conventional LCD devices is O: \ 92 \ 92808.DOC -44-1240130 range (in The triangular area in Figure 27) is greatly reduced. Observers can find the colors blurred. However, in a transmissive / reflective liquid crystal display device, as shown in Fig. 28, the color reproducibility of an illumination of 8,000 lx is substantially the same as that of an illumination of 01 1x. Moreover, when the illumination is 17,000 lx, the color reproducibility is only slightly reduced. Therefore, there is almost no color blur. In conventional transmissive liquid crystal display devices, the contrast is reduced because of the reflection of ambient light from the surface of the display panel and the reflection of light from black masks, contacts, etc. used to block light. In contrast, in the transmissive / reflective liquid crystal display device of this embodiment, in addition to the transmissive mode display, a reflective mode display using ambient light is provided, so that the reflective mode display can be suppressed in the transmissive mode display due to ambient light reflection The resulting contrast is reduced. Therefore, no matter how bright the ambient light becomes, the contrast obtained by the liquid crystal display device of this embodiment is not lower than that obtained by using only the reflection mode display. As a result, in the transmissive / reflective liquid crystal display device of this embodiment, the color reproducibility does not decrease even under bright ambient light, so a display with high visibility can be obtained under any conditions. FIG. 29 shows another specific example of the structure of this embodiment, in which the reflective electrode region 160R includes a reflective layer (reflective plate) 169 and a part of the transmissive electrode 168. Unlike the structure shown in Fig. 25, the reflective electrode region 120R includes a reflective electrode 69 having a reflective characteristic. The height of the reflective electrode region 160R of the active array substrate can be controlled by adjusting the thickness of the reflective layer 169 and / or the insulating layer 170 on the reflective layer 169. (Embodiment 10) FIG. 30 is an active array substrate O: \ 92 \ 92808.DOC -45-1240130 of the liquid crystal display device according to Embodiment 10 of the present invention, and a plan view FIG. 31 is a cross-section taken along the line gg of FIG. 30 Illustration. Referring to FIGS. 3G and 3B, a plurality of interpolar lines 200 and a plurality of source lines 2G3 are formed on a transparent insulating substrate 205 made of glass or plastic so as to cross each other. A pixel is defined by each area surrounded by the adjacent gate line 202 and the adjacent source line 2G3. The thin film transistor 204 is located near the intersections >, ', of the gate line 202 and the source line 203. The drain electrode 205 of each thin film transistor 204 is connected to the corresponding pixel electrode 206. The portion of each pixel used to form the pixel electrode 206 when viewed from the top includes two regions, namely, a region T having a high transmission efficiency and a region having a high reflection efficiency. In this embodiment, the indium tin oxide layer 207 constitutes the top layer of the region D as a layer with high transmission efficiency, and A1> f (or A1 alloy layer) forms the top layer of the region R4 as a layer with high reflection efficiency. These layers 207 and 208 constitute each pixel I pixel electrode 206. The pixel electrode 206 overlaps with a gate line dove of an adjacent pixel in a subsequent pixel column through a gate insulating film 209. During the driving period, a storage capacitor is formed on the M to form a storage capacitor for driving the liquid crystal. The thin-film transistor 204 includes, in order, a gate electrode 202 (a 202a in this case) as a source / drain, and a branch electrode 21, a gate insulating film 209, a semiconductor layer 212, and a channel protection. Layer 213, & n + _s ^ 2u. Although π is unknown, the formed active array substrate has an alignment film which is connected to a counter substrate having a transparent electrode and an upper layer having an alignment film. The liquid crystal is injected into the space between the two sealed substrates, and the back light is placed on the side of the formed structure after the formation of the liquid crystal display device according to this embodiment. Shoulder King type liquid crystal material ZLI2327 (Me ^ k & c〇 ·,) containing black pigment and 0.5% optically active substance S-8u (manufactured by Merck & Co., Inc.),

Inc.) as a liquid crystal. You can also use the electronically controlled birefringence (ecb) O: \ 92 \ 92808.DOC -46- 1240130 mode as the liquid mode. Place the polarizer on the top and bottom surfaces of the liquid crystal layer: When color display is required, A color filter (called a CF layer) including red, green, and monitor color layers is placed on top of the liquid crystal layer. The method of manufacturing the active array substrate in this embodiment will be described below. Firstly, a gate insulating film 209 is formed on an insulating substrate 201 by forming a gate line 2002 and a gate t10 made by 仏, and then forming a gate insulating film gt. Thereafter, a semiconductor layer 212 and a channel protection layer 213 are formed on each of the gate electrodes 210, and then a 205 (or 2u) tn + _si layer is formed as a source 211 and a drain. By sputtering and making a wiring pattern, an indium tin oxide layer 203a (bottom layer) and a metal layer 203b (top layer) are sequentially formed to form a source line 203. In this embodiment, Ti is used as the metal layer 203b. The advantage of the double-layer structure of the source line 203 is that even if the metal layer 203b constituting each source line 203 is defective, the indium tin oxide layer 203a can maintain the electrical connection of the source line 203, and reduce The source line 203 may be disconnected. The indium tin oxide layer 207 having a high light transmission efficiency in the kid area is formed of the same material as the tin oxide layer 203 forming the source line 203 in the same steps. The R region having a high reflection efficiency is sequentially formed by forming a wiring pattern by forming a Mo layer 214 and an A1 layer 208. The A1 layer 208 can provide a sufficiently stable reflection efficiency (about 90%) at a thickness of about 150 nm or more. In this embodiment, the thickness of the A1 layer 208 is 150 nanometers to effectively reflect ambient light. Ag, Ta, W, etc. can also be used in place of VIII and ... alloys for highly reflective layers (A1 layer 208). In this embodiment, an indium tin oxide layer 207 and an A1 layer 208 are used as the pixel electrodes 206 in each pixel. Or, eight or eight alloy layers with different thicknesses may be formed. O: \ 92 \ 92808.DOC -47-1240130 The areas with high light transmission efficiency and the areas with high reflection efficiency are individually defined as the areas T and R. This makes the manufacturing method simpler than the method using different materials. Moreover, the high reflection efficiency layer (the rhenium layer in this embodiment) of the R region can be made of the same material as the metal layer 203b used for the source line 203. The method for manufacturing a conventional transmission type liquid crystal display device is allowed to be used to manufacture the liquid crystal display device of this embodiment. As described above, each pixel electrode 206 includes a high transmission efficiency region τ and a high transmission efficiency region R. With this structure, it is possible to obtain a liquid crystal display device which, in comparison with a conventional liquid crystal display device using a transflective reflective film, more effectively uses ambient light and irradiated light for transmission / reflection mode display. An indium tin oxide layer 2 as a pixel electrode 206 is formed on the entire area of each pixel and on the adjacent pixel gate line 202a located in the subsequent pixel row through a gate insulating film 209 interposed therebetween. 〇7. An iM0 layer 214 is sandwiched between the indium tin oxide layer 207 and an eighty layer 208 to form a region R in the central portion of the island-like pixel. According to this method, since the indium tin oxide layer 207 and the A1 layer 208 are electrically connected to each other, the same voltage applied to the liquid crystal from the same thin film transistor 204 is applied to the region D and the ruler. Therefore, conversion lines are prevented from being generated due to changes in the orientation of liquid crystal molecules in a single pixel during a voltage application. The interposition of the Mo layer 214 between the indium tin oxide layer 207 and the A1 layer 208 can prevent the indium tin oxide layer 207 and the A1 layer from contacting with each other through the electrolytic solution during the manufacturing process, thereby causing electrical corrosion. In this example, the ratio of the area of the T area to the area of the R area is set to 糸 60 40 to achieve good display characteristics. The area ratio is not limited to this value, but may be appropriately determined according to the transmission / reflection efficiency of the T and R regions and the use of the device.

O: \ 92 \ 92808.DOC -48- 1240130 changed. In this embodiment, the area of the R area is preferably about 10 to about 90% of the effective pixel area (that is, the sum of the area of the T area and the area of the R area). If the percentage is less than about 10%, that is, a region with high transmission efficiency accounts for a large portion of the pixel, a problem between conventional transmission-type liquid crystal display devices arises, that is, when the environment becomes too bright, the display should be blurred. Conversely, if the percentage of the R area exceeds about 900/0, a problem arises when the ambient light is too dark to view the display using only ambient light. That is, even if the backlight is connected in this case, the occupancy rate of the T region is still low as a display formed by the method of identification. In particular, when the liquid crystal display device is applied to a device mainly used outdoors, battery life is an important factor, and the device should be designed to make full use of ambient light to reduce energy consumption. Therefore, the area of the & region with high reflection efficiency is preferably about 40 to about 90% of the effective pixel area. When the area occupancy of the ruler area is about 40%, only the reflection mode display is sufficient to display the limited environment, and the time required for the light from the backlight becomes longer. This condition shortens the battery life. On the other hand, when the liquid crystal display device is applied to a device mainly used outdoors

The liquid crystal display device of the embodiment is O: \ 92 \ 92808.DOC The device should be designed to effectively use the light from the backlight. If yes, the area of the ruler area is preferably about 60% of about 10 sides of the effective pixel area. When the R area <area% occupancy rate exceeds 6G%, the light from the backlight is used to penetrate. In order to compensate for this phenomenon, the brightness of the backlight needs to be substantially higher. The display device is increased. This increases energy consumption and reduces the device installed on the battery-powered camera-49-1240130. As a result, the head remains bright and recognizable regardless of the brightness of ambient light by the brightness of the backlight after one week. In particular, when the device is used outdoors in good weather, there is no need to turn on the backlight, so energy consumption is reduced. Therefore, compared with a device using only a transmissive liquid crystal display device, the battery life is significantly increased. (Embodiment 11) FIG. 32 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 11 of the present invention. FIG. 33 is a cross-sectional view taken along line iH_H in FIG. 32. In this embodiment, the portion of each pixel to be formed into a pixel electrode is divided into two portions at its center when viewed from above, namely, a T region with high transmission efficiency and an R region with high reflection efficiency. The same components are denoted by the same reference numbers as those used in Figs. 30 and 31 of Embodiment 10. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Embodiment 10. Referring to FIGS. 32 and 33, an indium tin oxide layer 207 is formed in a range from the central portion of each pixel to the vicinity of the corresponding gate line 202, and is partially connected to the drain electrode 205 of the thin film transistor 204. The high reflection efficiency A1 layer 208 overlaps the hafnium tin oxide layer 207 via the Mo layer 214 located at the center of the pixel. The A1 layer 208 extends on the side of the pixel opposite to the area of the indium tin oxide layer 207, and overlaps with a gate line 202a located in a subsequent pixel row for adjacent pixels via a gate insulating film 209. Since the indium tin oxide layer 207 and the A1 layer are electrically connected via the Mo layer 214, the electrical corrosion caused by the contact between the indium tin oxide layer 207 and the A1 layer 208 is suppressed. The A1 layer 208, that is, the overlap between the R region and the gate line 202a and the adjacent pixels is formed by the insulating film 209 to O: \ 92 \ 92808.DOC -50-1240130. The heavy container is formed during the driving of the liquid crystal, and the overlapped portion of the r region is also shown in FIG. This greatly increases the effective area of the pixel compared to the conventional structure. In order to increase the number of pixels, the mirror-to-hole ratio, τ is formed on the thin-film transistor 204 or the source line 203 via an insulating film with a high reflection efficiency film such as layer 2. 8, as a part of the pixel electrode (which is electrically connected to the drain electrode. However, in this case, the thickness, material, and pattern design of the insulating film should be determined appropriately to make the image quality The decrease due to the parasitic capacitance generated between the pixel electrode 206 and the source line 2 is minimized. (Embodiment I2) FIG. 34 shows an active array substrate of a liquid crystal display device according to Embodiment 12 of the present invention. Partial plan view. Fig. 35 is a cross-sectional view taken along the line "" of this drawing. This embodiment differs from the embodiment 丨 in that a common line is formed under the region r of south reflection efficiency through the gate insulating film 209. 2 丨 5. In FIGS. 30 to 33 of Embodiments 1G and U, the same components are denoted by the same reference numerals. The manufacturing method of the pixel, the thin film transistor structure, and the device is substantially the same as that described in Embodiments 10 and 11. This is the same. Referring to FIGS. 34 and 35, the indium tin oxide layer 207 is The pixel is located on the opposite side of the free line 202 from the center to the edge, and is connected to the drain electrode 205 of the thin-film transistor 204. The eighth layer 208 with high reflection efficiency is connected to the indium oxide via the Mo layer located at the center of the pixel. The tin layer 207 is overlapped. The eight layers] ^ extend on the side of the pixel opposite to the area of the indium tin oxide layer 207, and pass through the idler insulating film and are located in the subsequent pixel row for adjacent pixels. The common line 21 is the heaviest. Because the yttrium indium tin oxide layer 207 and the A1 layer are electrically connected via the Mo layer 214,

O: \ 92 \ 92808.DOC -51-1240130 Causes the electric corrosion caused by the contact between the hafnium oxide layer 207 and the A1 layer 208. The A1 layer 208, that is, the R region and the common line 215 overlap through the insulating film 209, and a storage capacitor is formed during the driving of the liquid crystal, thereby improving the display. The formation of such a storage capacitor does not reduce the mirror-to-hole ratio. In order to further increase the pixel aperture ratio of the pixel, a high reflection efficiency film such as an A1 layer 208 may be formed on the thin film transistor 204 or the source line 203 via an insulating film as a part of the pixel electrode 206 (which is electrically connected to The drain 205). However, in this case, the thickness and material of the insulating film should be appropriately determined so that the image quality does not cause parasitic capacitance between the pixel electrode 206 and the thin film transistor 204 or the source line 203. For example, after the hafnium tin oxide layer is formed, an organic insulating film having a dielectric constant of about 3.6 is formed on the entire surface of the formed substrate with a thickness of about 3 microns. After that, an A1 layer may be formed in each pixel so as to overlap the thin film transistor 204 or the source line 203, and is electrically connected to the drain electrode 205. Such electrical connection can be achieved by forming a contact hole in the drain electrode 205 or the hafnium oxide layer 207 through the contact hole. In this embodiment, a portion of each pixel to form the pixel electrode 206 is divided into two regions, namely, a region with high light transmission efficiency (T region) and a region with high reflection efficiency (R region). Or The section can be divided into three or more areas. For example, as shown in FIG. 36, the pixel electrode 206 can be divided into three regions, namely, a T region with high transmission efficiency, an R region with high reflection efficiency, and a C region with different transmission or reflection efficiency from the other two regions. Embodiment 13) FIG. 37 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 13 of the present invention. Figs. 38A to 38D are cross-sections taken along line J-J of Fig. 37. O: \ 92 \ 92808.DOC -52-1240130 is a plan view 'illustrating a method of manufacturing the liquid crystal display device of this embodiment. In this embodiment, the R region with high reflection efficiency is made of the same material as the source line. In Figs. 30 to 36 in Examples 10 to 12, the same components are denoted by the same reference numerals. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Examples 10 to 12, unless otherwise stated. In this private example, each pixel includes a high transmission efficiency D region located in the center portion thereof and an R region surrounding the T region. The outer contour of the R region is a square shape following two gate lines and two source lines. The R region includes a layer with high reflection efficiency, and is made of the same material as the source line to obtain high reflection efficiency. A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 38A to 38D. Referring to FIG. 38A, a gate line 202 (refer to FIG. 37) and a gate 210, a gate insulating film 209, a semiconductor layer 212, a protective layer 213, and a charging layer are sequentially deposited on the insulating substrate 201 by sputtering. The n + Si layer 211 serving as the source 211 and the drain 205 (or 211). After that, a conductive film 241 for source line 203 (see FIG. 37) is deposited on the formed substrate by sputtering. Referring to FIG. 38B, the conductive film 241 is patterned to form a layer 242 with high reflection efficiency, a drain-to-pixel connection layer 243, and a source line 203. The 焉 reflection efficiency region of this layer corresponds to the R region. Referring to Fig. 38C, an interlayer insulating film 244 is formed on the formed substrate, and then a contact hole 245 penetrating the interlayer insulating film 244 is formed. Referring to Fig. 38D ', a high transmission efficiency layer 246 made of indium tin oxide is formed on the entire area of each pixel. The high transmission efficiency layer 246 may be made of any other high transmission efficiency material. The high transmission efficiency layer 246 is connected to the connection layer 243 through the contact hole 245 of the through / interlayer insulating film 244, and is electrically connected to the corresponding layer.

O: \ 92 \ 92808.DOC -53-! 24〇13〇 sense drain 205. (2) The transmission efficiency layer 246 also functions as a pixel electrode that provides a voltage to the liquid crystal layer, so that the voltage is provided to the liquid crystal layer through the high transmission efficiency layer 246, corresponding to 10,000; portions of the T and R regions. Therefore, in this embodiment, each pixel electrode includes a 鬲 transmissivity layer 246, but does not include a τ region with high transmission efficiency and a ruled region with high reflection efficiency. The advantage of this structure over the transmissive liquid crystal display device is that a high reflection efficiency area can be formed without increasing the number of program steps and minimizing the number of pixel electrode formation failures. (Example 14) FIG. 39 is a plan view of an active array substrate of a liquid crystal display device according to Example 14 of the present invention. 40A to 40D are cross-sectional views taken along line KK of Fig. 39 'to illustrate a method of manufacturing the liquid crystal display device of this embodiment. In this embodiment, the high reflection efficiency area (hatched portion in Fig. 39) is made of the same material as that used for the gate line. The same components in Figs. 30 to 38 in Examples 10 to 13 are denoted by the same reference numerals. Unless otherwise stated, the manufacturing method of the pixels, the thin M transistor structure, and the device are substantially the same as those described in Examples 10 to 13. 1 = In the embodiment, 'viewed from the top, each pixel includes a T region located at its center with high transmission efficiency' and an R region surrounding the T region, which essentially includes two connecting stripes. The outer contour of the R region is a high-reflection efficiency layer made of the same material as the gate line that depends on the two gate lines and the two source lines. R1I includes high reflection efficiency. A method of manufacturing the liquid crystal display device will now be described with reference to FIGS. 40A to 40D. / Referring to FIG. 40A, a conductive film is formed on the insulating substrate 2 () 1. The conductive film is then patterned to form a gate electrode 21o, a gate line 2q2 (see _), and a 0: \ 92 \ 92_.Doc-54-1240130 high reflection efficiency layer 242. The high reflection efficiency layer 242 corresponds to the r region. Referring to FIG. 40B, a gate insulating film 209, a semiconductor layer 2 12 and a channel protective layer 2 13 are sequentially deposited on the formed substrate by sputtering, and n +-to be used as the source 2 11 and the electrode 205 (or 211). Si layer 211. After that, a metal layer 203b and a drain-to-pixel electrode connection layer 243 are formed in the same step as a sub-source layer 203. The connection layer 243 partially overlaps the drain electrode 205 of the thin film transistor 204. Referring to Fig. 40C, indium tin oxide is deposited on the formed substrate by sputtering, a wiring pattern is formed to form a high transmission efficiency layer 246, and a hafnium tin oxide layer 203a as a part of the source line 203. A layer 246 having a high transmission efficiency is formed on the entire area of each pixel, and a hafnium tin oxide layer 203a is formed on the metal layer 203b to have the same pattern as that of the metal layer 203b. The high transmission efficiency layer 246 partially overlaps the connection layer 243 to be electrically connected to each thin film transistor 204. Referring to FIG. 40D, a | tuning film 247 is formed and a wiring pattern is produced. Therefore, each pixel of the liquid crystal display device of this embodiment includes a T region having a high transmission efficiency at a central portion thereof, and a high reflection efficiency r region which surrounds a τ region and is connected with two connection stripes of adjacent source lines. . In this case, because the oxide tin layer 2 0 3 a of the source line 2 03 and the material 242 with high reflection efficiency are located at different heights, the indium tin oxide layer 203a and the high reflection efficiency material layer of each pixel 242 It is necessary to prevent the gap of light leakage from being reduced, so that the mirror hole of the pixel is increased when the T and R regions are formed in the opposite case (that is, the high reflection efficiency layer is located at the center of the pixel). In this embodiment, as in Embodiment 13, each pixel electrode includes only one type of electrode (that is, the high transmission efficiency layer 246). The advantage of this structure over the structure in which the pixel electrode includes two types of electrodes is that the incidence of defects is reduced, and the device can be efficiently manufactured by O: \ 92 \ 92808.DOC -55-1240130. In this embodiment, each of the source lines 203 has a double-layered structure including a metal layer 203b and a steel tin oxide layer 203a. Even if the metal layer is partially defective, the source line 203 is still electrically connected by the hafnium tin oxide layer 203a. And reduce the possibility of source line 203 disconnection. (Embodiment 15) Figure 41 is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 15 of the present invention. 42A to 42C are cross-sectional views taken along line L-L of Fig. 41, and illustrate a method of manufacturing the liquid crystal display device of this embodiment. In this embodiment, the pixel electrode is extended on the gate line and / or the source line through an insulating film to increase the effective pixel area (substantially the area of the pixel). The same components in Embodiments 10 to 14 use the same Numbering. Unless otherwise stated, the pixels, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Examples 10 to 14. As shown in FIG. 41, in this embodiment, when viewed from above, each pixel includes a high transmission efficiency τ region in the center portion thereof and a square R region formed by a strip surrounding the region (in FIG. 41). The slash area). The pixel electrode including the high transmission efficiency layer overlaps the adjacent gate line 202 and the source line 203 through the interlayer insulating film, and can be located on the gate line 202 and the source line 203 in the liquid crystal layer. A voltage is applied to the part. This confirms that the effective pixel area is larger than that of Examples 10 to 14. In this example, the gate line 202 and the source line 02 are located in the R region as a high-reflective chirped and textural layer. A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 42A to 42C. O: \ 92 \ 92808.DOC -56-1240130 Referring to FIG. 42A, gates 2 and 0, gate lines 202 (see FIG. 41), gate insulating film 209, semiconductor layer 212, The channel protection layer 213 and the n + -Si layer 211 to be the source electrode 211 and the drain electrode 205 (or 211). At least one of the gate line 202 and the source line 203 is intended to be overlapped with a transmissive layer as a pixel electrode in a subsequent step-preferably made of a material with high reflection efficiency. Referring to FIG. 42B, an interlayer insulating film 244 is formed on the formed substrate, and a contact hole 245 penetrating the interlayer insulating film 244 is formed. Referring to FIG. 4C, a high transmission efficiency material such as hafnium tin oxide 'is deposited on the formed substrate by sputtering and a wiring pattern is formed to form a high transmission efficiency layer 246. The high transmission efficiency layer 246 is connected to the connection layer 243 through the contact hole 245, and is sequentially connected to the drain electrode 205 of the thin film transistor 204. In this case, the high-transmission-efficiency layer 246 is patterned to overlap with at least one of the gate line 202 and the source line 203. With this structure, the gate line 202 and / or the source line 203 that overlap the south transmission efficiency layer 246 via the interlayer insulating film 244 can be used as a high reflection efficiency layer. A display device having a different structure should be designed so as not to cause a capacitance between the high transmission efficiency layer 246 and the gate line 202 or the source line 203 to cause a phenomenon such as crosstalk, which leads to a reduction in image quality. Therefore, in this embodiment, each pixel includes a T region having a high transmission efficiency at the center thereof and an R region having a high reflection efficiency at a position corresponding to an adjacent gate line and / or source line. . This eliminates the need to form other high reflection efficiency layers and shortens the process. (Embodiment 16) FIG. 4 is a partial plan view of an active array substrate O: \ 92 \ 92808.DOC -57-1240130 of a liquid crystal display device according to Embodiment 16 of the present invention. Figs. 44A to 44F are sectional views taken along the line M-M in Fig. 43, and illustrate a method of manufacturing the liquid crystal display device of this embodiment. As shown in FIG. 43, each pixel of the liquid crystal display device of this embodiment includes a high transmission efficiency T region described at its center, and a height of two stripes located on the side of the τ region and including two adjacent source line 203. The reflection efficiency r region (the oblique portion in FIG. 43). As shown in FIG. 44F, the R region includes any of the high ridge portions 253a and the low ridge portions 253b located on the insulating substrate 201, the polymer resin layer 254 located on these ridge portions 253a and 253b, and the A high reflection efficiency layer 242 on the polymer resin layer 254. The formed layer 242 constitutes the surface layer of the R region, and has a continuous wave-type surface, and is electrically connected to the electrode 205 through the contact hole 245 and the bottom electrode (not shown). A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 44A to 44F. Referring to FIG. 44A, a plurality of gate lines 200 (refer to FIG. 43) and an interrogation electrode 210 made of a material such as Cr, Ta, etc. branched from the gate line 202 are formed on the insulating substrate 201. A free-pole insulating film 209 made of a material such as SiNx, SiOx is formed on the substrate 201 to cover the gate line 202 and the gate 210. A semiconductor layer 212 made of amorphous silicon (a_si), polycrystalline silicon, CdSe, or the like is formed on a portion of the interlayer insulating film 209 located on the gate 210. A channel protection layer 213 is formed on each semiconductor layer 212. A pair of contact layers 248 made of a-Si are formed on both sides of the channel protection layer and extend to the sides of the semiconductor layer 2 丄 2. A source electrode 249 O: \ 92 \ 92808.DOC -58-1240130 made of Tl, Mo, A1 and other materials is formed on one contact layer 248, and a material such as Ti, Mo, A1 is formed on the other contact layer 248 Manufacturing of no pole 205. In this embodiment, a glass plate manufactured by Corning Inc. with a product number of 7059 and a thickness of 1.1 mm is used as the material of the insulating substrate 201. Referring to FIG. 44B, a conductive film is formed on the formed substrate by sputtering, and a wiring pattern is formed to form a metal layer 203b, which is also a part of the source line 203 and the bottom electrode 250. Each of the bottom layers 250 may partially cover the gate electrode 202 for use by an adjacent pixel in a subsequent pixel row through the gate insulating film 209, thereby forming a storage capacitor therebetween. Each gate line 202 used to form a storage capacitor can overlap with a high reflection efficiency layer, or the reflection efficiency of the gate line 202 itself can be as high as a part of the pixel area (R area), thereby further increasing the mirror hole ratio . Referring to FIG. 44C, hafnium tin oxide is deposited on the formed substrate by sputtering, and a wiring pattern is formed to form a hafnium tin oxide layer 203a, which forms a source line 203 together with the metal layer 203b. In this embodiment, each source line 203 has a double-layered structure including a metal layer 203b and an indium tin oxide layer 203a. The advantage of this double-layer structure is that the electrical connection of the source line 203 can be maintained by the hafnium tin oxide layer 203a even if the metal layer 203b is partially defective. This reduces the possibility of the source line 203 being disconnected. Simultaneously with the formation of the hafnium tin oxide layer 203a, a layer 246 having a high transmission efficiency and constituting a pixel electrode is obtained by making a wiring pattern. At this time, a layer 246 having a high transmission efficiency as a pixel electrode can be formed simultaneously with the source line 203. Referring to FIG. 44D, a resist film 252 made of a photosensitive resin is formed, and O: \ 92 \ 92808. DOC -59- 1240130 A wiring pattern is produced, followed by heat treatment to passivate it, and high convex portions 253a and low convex portions 253b having a substantially circular cross section are formed on a portion of the formed substrate corresponding to the R region. It is preferable that the raised portions 253a and 253b are not on the high transmission efficiency layer 246 layer, so that a voltage can be effectively applied to the liquid crystal layer. However, even if the raised portions 253a and 253b are located on the layer 246, as long as the raised portions are transparent, there is still no significant optical influence. Referring to FIG. 44E, a polymer film 254 is formed on the raised portions 2533 and 25313. With this film, the concave and convex surfaces of the R region can be made more continuous by reducing the number of planar portions. This step can be omitted by changing the manufacturing conditions. Referring to FIG. 44F, a layer 242 fabricated by forming a reflection efficiency on a predetermined portion of the polymer film 254 by, for example, sputtering is used as a pixel electrode. Suitable materials for the rubidium reflection efficiency layer 242 include, in addition to A1 and A1 alloys, Ta Ni 'Cr and Ag with high reflectance. The thickness of the surface reflection efficiency layer 242 is preferably in the range of about 0.01 to about 1.0 micron. Therefore, each pixel of the liquid crystal display device of this embodiment includes a high transmission efficiency D region located at the center thereof, and a high reflection efficiency rule region attached to an adjacent source line. This structure is used because the indium tin oxide layer 203a of the source line 203 and the reflection efficiency layer 242 are located at different heights and are opposite to the position where the T and R regions are formed (that is, the reflection efficiency layer is located in the pixel). In the center), the gap between the indium tin oxide layer 203a and the high reflection efficiency layer 242 to prevent light leakage can be reduced, and the mirror aperture ratio of the pixel is increased. In this embodiment, the high reflection efficiency layer 242 has a smooth concave and convex surface, so that the reflected light is scattered in a wide orientation. Using a diffuser

O: \ 92 \ 92808.DOC -60- 1240130 ′ It is not necessary to use the anti-dust film 252 to form the raised portions, and the surface of the high reflection efficiency layer 242 can be adjusted to a flat surface. In either case, the high reflection efficiency layer 242 and the high transmission efficiency layer 246 are individual layers with a third substance (for example, resin and metal such as Mo) interposed therebetween. With this structure, in the specific case where the high transmission efficiency layer is made of indium tin oxide and the high reflection efficiency layer is made of VIII or A1 alloy, the A1 wiring pattern can be reduced due to the A1 etching step. It is damaged by electric corrosion. (Embodiment 17) FIG. 45 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 17 of the present invention. Fig. 46 is a sectional view taken along the line N-N in Fig. 45; 45 and 46, the active array substrate includes a pixel electrode 206 having a matrix type, a gate line 202 for providing a scanning signal, and a source line 203 for providing a display signal, which surrounds the pixel electrode 20. The edges of 6 cross each other. The pixel electrode 206 overlaps the gate line 202 and the source line 203 at this edge via an interlayer insulating film 244. The thin film transistor 204 is located at each parent point of the gate line 202 and the source line 203 to serve as a vertical switching element for providing a display signal on the corresponding pixel electrode 206. The gate 210 of the thin film transistor 204 is connected to the corresponding gate line 202 to drive the thin film transistor 204 using a signal input to the gate 210. The source 249 of the thin film transistor 204 is connected to the corresponding source line 203 to receive a data signal. The drain electrode 205 of the thin film transistor 204 is electrically connected to the connection electrode 255, and is connected to the pixel electrode 206 through a contact hole 245. The connection electrode 255 forms a storage capacitor O: \ 92 \ 92808.DOC -61-1240130 through a gate insulating film 209 and a common line 2 丨 5. The common line 215 includes a metal film and is connected to a counter electrode on the counter substrate 256 via an interconnector (not shown). The common line 215 can be formed in the same steps as the formation of the idle electrode 202 to shorten the manufacturing process. Each pixel electrode 206 includes a high-reflectivity layer 242 made of A1 or A1 alloy, and a high-transmission efficiency layer 246 made of indium tin oxide. When viewed from above, the pixel electrode 206 is divided into three regions, that is, two regions of high transmission efficiency and one region of high reflection efficiency (corresponding to the oblique line portion of FIG. 45). The high reflectivity layer 242 may also include a high reflection efficiency conductive metal layer such as Ta as in the foregoing embodiments. Each R region is designed to cover a part of the light shielding electrode and interconnection lines such as the gate line 202, the source line 203, the thin film transistor 204, and the common line 215, which does not allow the light from the backlight to transmit. With this structure, the portion of each pixel that cannot be used as the T region can be used as the high reflection efficiency R region. Increase the mirror hole ratio of the pixel portion. The T region of each pixel portion is surrounded by the R region. A method of manufacturing an active array having the foregoing structure is described in private. First, 碉 is sequentially formed on a transparent insulating substrate 205 made of glass and other materials; b 21 〇 gate line 202, common line 215, gate insulation film 209, semiconductor layer 212, channel protection layer 213, source Pole 249 and drain 205. After that, a transparent conductive film and a metal film to form the source line 2G3 and the connection electrode 255 are deposited on the formed substrate, and a wiring pattern is formed into a predetermined shape. Therefore, each of the source lines 203 has another layer structure including an indium tin oxide layer 203a and a metal b. The advantage of this double-layer structure is that even the metal layer part

O: \ 92 \ 92808.DOC -62- 1240130 points, the hafnium tin oxide layer 203a can still maintain the electrical connection of the source line 203. The possibility of disconnection of the source line 203 is reduced. After that, a photosensitive acrylic resin was applied to the formed substrate by a spin coating method to form an interlayer insulating film 244 having a thickness of about 3 m. The acrylic acid was exposed to Ik after a month and developed according to a desired pattern using a test solution. Only the exposed portion of the film is etched by the alkali solution to form a contact hole penetrating through the interlayer insulating film 244. Using alkali development, a perfect tapered contact hole 245 is obtained. The use of a photosensitive acrylic resin for the interlayer insulating film 244 is advantageous in terms of productivity based on the following factors. Since spin coating can be used to form a thin film, it is fortunate to form a film as thin as a few microns. In addition, the intermediate layer insulating film 244 does not require a photoresist applying step when producing a wiring pattern. In this example, the 'propionic acid resin is originally colored, and can be made transparent by exposing the entire surface after fabric, spring pattern is made. This acrylic resin can also be made transparent by chemical processing. Thereafter, a hafnium tin oxide film is formed by sputtering and wiring pattern formation, and is used as the high transmission efficiency layer 246 of the pixel electrode 206. Therefore, the n transmission efficiency layer 246 constituting the pixel electrode 206 is electrically connected to the corresponding connection electrode 255 through the contact hole 245. The high transmission efficiency layer 242 made of A1 or A1 alloy is formed on the high transmission efficiency portion of the material layer 246 corresponding to the R region to cover the gate line 202, the source electrode, the spring 203, and the thin film transistor 2 〇4, and common line 215. The two material layers 242 and 246 are electrically connected to each other to form a pixel electrode 206. Any adjacent pixel electrode 206 is on the part above the gate line 202 and the source line, and is not electrically connected to each other. As shown in FIG. 46, the manufactured active array substrate and the substrate are bonded to one another.

O: \ 92 \ 92808.DOC -63- 1240130 and later, the liquid crystal &gt; Wang shot in the space between the substrates to complete the liquid crystal display device of this embodiment. As described in another article ', the liquid crystal display device of this embodiment includes a high reflection efficiency layer 242 which is located on the thin film transistor 204, the gate line 202, and the source line 203 to form a pixel electrode 206iR region. This eliminates the need to provide a light-shielding film to prevent light from entering the thin-film transistor 204, and to shield a portion of the pixel electrode 206 on the gate line 202, the source line 203, and the common line 215. These 4 are light leakages in the form of functional areas and conversion lines in the easy-to-display area. As a result, conventionally, it cannot be used as a display area because it is shielded by a light-shielding film. The area can be reused as a display area. This makes efficient use of the display area. When the gate line and the source line include a metal film, they shield light from the backlight in a conventional transmissive liquid crystal display device, so they cannot be used as a display area. However, in this embodiment, the τ region with high transmission efficiency is formed at the center of each pixel (this embodiment is two separate parts). The R region with high reflection efficiency is formed in a stripe shape surrounding the T region. That is, the ruled region with high reflection efficiency covers the gate line, the source line, the common line, and the switching element, and is used as a reflective electrode region of each pixel electrode. This structure increases the mirror hole of the pixel electrode in the opposite pattern (that is, the pattern in which the T region surrounds the R region). Alternatively, the R region of each pixel may be formed as shown in FIG. 47 (the oblique line portion), including the connection electrode 255. This suppresses the brightness of light passing through the τ region. (Embodiment 18) In the foregoing embodiment, the present invention is applied to an active matrix type liquid crystal display device. The invention can also be applied to a simple matrix type liquid crystal display device. The basic structure of a pair of row electrodes (signal electrodes) and column electrodes (O: \ 92 \ 92808.DOC -64-1240130 scan electrodes) facing each other will be described below. In a simple matrix type liquid crystal display device, a region where the pair of row electrodes and column electrodes cross each other is defined as a pixel. 48A to 48C show examples of the pixel region. Referring to FIG. 48A, a transmissive electrode region is formed in a row electrode center portion in a pixel region, and a reflective electrode region is formed in the remaining edge portion. The structure of the row electrodes may be the same as that of FIG. 48B or 48C. The height of the reflective electrode region can be adjusted by forming an interlayer insulating film between the reflective electrode and the transmissive electrode, as shown in Fig. 48C. Alternatively, as shown in FIG. 49A, a reflective electrode region may be formed in a central portion of a row electrode in a pixel region, and a transmissive electrode region may be formed in the remaining edge portions. The structure of the row electrodes is shown in Fig. 49B or 49C. The height of the reflective electrode region can be adjusted by forming an interlayer insulating film between the reflective plate and the transmissive electrode, as shown in Fig. 49C. Alternatively, as shown in Figs. 50A, 50B, and 50C, the row electrodes may have strip-shaped reflective electrode regions. The strip-shaped reflective electrode region may be formed along one side of the row electrode, as shown in Figs. 50A to 50C, or formed along its center, as shown in Figs. 51A and 51B. The features of the liquid crystal display device according to the present invention which are different from conventional reflective or transmissive liquid crystal display devices will be described below. In a conventional reflective liquid crystal display device, the display is performed using ambient light to reduce energy consumption. Therefore, when the ambient light is lower than a specific limit value, the display cannot be recognized even if the device is used in an environment that can provide sufficient energy. This is the biggest disadvantage of the reflective liquid crystal display device. If the reflection characteristics of the reflective electrode are changed during manufacture, the ambient light utilization efficiency of the reflective electrode is also changed. This changes the threshold value of the unrecognizable ambient light intensity according to the panel change display. Therefore, at the time of manufacture, the reflection characteristics of O: \ 92 \ 92808.DOC -65-1240130 "requiring car needs to be used" radio-type LCD display device to control the mirror hole more carefully than when changing. Otherwise, a liquid crystal display device having stable display characteristics cannot be obtained. On the contrary, in the liquid crystal display device of the present invention, the light from the backlight is used in an environment that can provide sufficient electric power like a conventional transmissive liquid crystal display device. For this reason, the display is recognizable regardless of the ambient light. Therefore, changes in ambient light efficiency due to changes in reflection characteristics do not need to be strictly controlled as in reflective liquid crystal display devices. On the other hand, in a transmissive liquid crystal display device, when ambient light becomes bright, the surface reflection component of light increases, making it difficult to recognize the display. In the liquid crystal display device of the present invention, the reflection region is used together with the transmission region. This increases panel brightness and improves visibility. Therefore, the liquid crystal display device of the present invention can overcome the decrease in visibility of the conventional transmissive liquid crystal display device under high (ie, bright) ambient light due to surface reflection ~ and the low (ie, darkness) of the reflective liquid crystal display device for clog The problem that the display is difficult to recognize due to the decrease of the panel shell under the light of the brother. In addition to the foregoing, the characteristics of these devices can be obtained at the same time. As described in the text, according to the present invention, compared with the case of using a transflective reflective film, each pixel includes a region having a higher transmission efficiency and a region having a same reflection efficiency. In each region, a high transmission efficiency layer or a high reflection efficiency layer is used as the pixel electrode. With this structure, unlike the liquid crystal head display device for 4 using a semi-transmissive reflective film, it is possible to prevent the utilization efficiency of light and irradiation light from being reduced due to, for example, astigmatism. By using reflection mode., 7F, 7F transmission mode display T, or both reflection mode display and transmission mode

O: \ 92 \ 92808.DOC -66- 1240130 _ display, regardless of the degree of party members, can display good images. Because two kinds of light from the backlight and ambient light can be effectively used for display at the same time, the energy consumption is much lower than a transmissive liquid crystal display device that always uses light from the backlight. In other words, the present invention can overcome the shortcomings of the conventional reflective liquid crystal display device that greatly reduces the visibility under low ambient light and the conventional transmissive liquid crystal display device under high ambient light by increasing light utilization efficiency. The area where the mouth is south reflection efficiency covers the gate line, source line, and / or switching element, so the light incident on these parts can be used for display. Therefore, the effective area of pixels is greatly increased. This not only overcomes the problem of conventional devices using a semi-transmissive reflective film, but also increases the mirror-to-hole ratio of each pixel, even when compared with a general transmissive liquid crystal display device. The right side only has a high transmission efficiency layer for forming a pixel electrode, and the case where the high transmission efficiency layer and the high reflection efficiency layer are electrically connected to each other to form a pixel pixel electrode, and the middle high transmission efficiency layer and the high reflection Comparing the case where the efficiency layers are partially weighted to form a pixel electrode of a pixel, the possibility of defects caused by the pixel electrode can be reduced. The south transmission efficiency layer or the high reflection efficiency layer may be made of the same material as the source line or the gate line. This simplifies the manufacturing process of the liquid crystal display device. The area of the high reflection efficiency region in the effective pixel region is set to occupy about 10 to about 90%. This setting also overcomes the problems that the conventional transmissive liquid crystal display device becomes less readable when the ambient light is too high, and the conventional reflective liquid crystal display device becomes completely unrecognizable when the ambient light level is too low. Therefore, regardless of the amount of ambient light, you can use the reflection mode display and transmission mode display

O: \ 92 \ 92808.DOC -67- 1240130, or use reflection mode display and transmission mode display at the same time to get the best display. The reflective / transmissive liquid crystal display device of the present invention is particularly effective when it is applied to a device in which the display screen cannot swing or move to a better environment that is more convenient for an operator to use. The liquid crystal display device of the present invention is actually used as a camera (detector screen) in a battery-driven digital camera or video camera. As a result, it was found that regardless of the ambient brightness, the brightness of the backlight can be adjusted to maintain the brightness suitable for viewing, while keeping the energy consumption low. When the conventional transmissive liquid crystal display device is used outdoors in bright sunlight, even if the brightness of the backlight is increased, it becomes less readable. In this case, the liquid crystal display device of the present invention can be used as a reflective liquid crystal display device by turning off the backlight, or it can be a transmissive / reflective device by reducing the luminance of the chirped light. As a result, it is possible to obtain good display quality and reduce energy consumption. Once the hair: when the liquid crystal display device is used indoors where there is bright sunlight, the prismatic display and transmission mode display can be switched according to the orientation of the target object or both can be used at the same time, so that the display can be more easily recognized. When detecting direct sunlight, it can use outdoor conditions with bright sunlight. When the target object is imaged in the indoor corner π ^ angle corner, the backlight is turned on and the child device is used as the reflection / transmission mode display. When the liquid crystal display device of the present invention is used as a U-curtain in a car, a flat screen and a flat top device such as a car navigator, it is displayed regardless of ambient light. ^ Ru 胄 'also got really distinguishable in the use of the traditional clean ㈢ turtle turtle class, movie ”and Rikou _ 装置 不 装置 的 车 卜 遒 _ .._ Qianshang and other aviation consultation, # 用; the user in the personal computer Tomb 仏 &amp; m T Hanyong ^ Bao Xisi is illuminated after use, so it can be used for good weather stone

O: \ 92 \ 92808.DOC -68- 1240130 The environment receiving direct sunlight. However, despite this high brightness, the display is still harder to recognize under the description ring i. On the other hand, after having such high brightness, the illumination is too bright to dazzle the user, and therefore has a negative effect. In the car navigator using this hair fluid, the reflection mode display is always used with the transmissive panel head. This can be displayed well without increasing the brightness of the backlight and under bright and dark. Conversely, in extremely dark environments, it is possible to obtain a discernible display by illuminating the light after only a low degree of partyness (about 50 to 1000 cd / m2). 7J &W; Various other improvements are apparent from the scope and spirit of the invention. Therefore, the scope of patent application is not limited to the foregoing description, but is a broad scope of patent application. [Brief description of the drawings] FIG. 1 is a plan view of an active array substrate of a liquid crystal display device according to Example i of the present invention; FIG. 2 is a cross-sectional view taken along line a_b of FIG. I; A plan view of another specific example of an active array substrate; FIG. 4 is a plan view of another specific example of an active array substrate of Embodiment 1 of the present invention; FIG. 5 is a middle layer illustrating a liquid crystal display device according to Embodiment 2 of the present invention Plan view of an insulating film and a metal film; FIG. 6 is a cross-sectional view taken along line c_d of FIG. 5; solid 7 is a cross-sectional view of a liquid crystal display device according to Embodiment 3 of the present invention; and FIG. 8A is Embodiment 4 of the present invention. Active array base

O: \ 92 \ 92808.DOC -69- 124〇13〇 plan view, and FIG. 8B is a sectional view taken along line 8A ^ _a; FIG. 9 is a sectional view of the liquid crystal display device of the present invention; FIG. 10 FIG. 11A is a plan view of another specific example of an active array substrate for a liquid crystal display device according to Embodiment 4 of the present invention, and FIG. 11A is a plan view of another specific example of the liquid crystal display device according to Embodiment 4 of the present invention, and FIG. 11B is a cross-sectional view taken along line β-B in FIG. Iia; FIG. 12A is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention; and FIG. 12B is a plan view taken along line cc in FIG. 12A 13A is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 6 of the present invention, and FIG. 13B is a cross-sectional view taken along line DD of FIG. 13A. FIG. 14A is a liquid crystal of Embodiment 7 of the present invention 14B is a cross-sectional view taken along the line EE of FIG. 14A, and FIG. 15 is a cross-sectional view of a reflective / transmissive liquid crystal display device according to Embodiment 8 of the present invention; To show the reflection / transmission of Example 8 Fig. 17 is a graph showing the relationship between the mirror hole ratio and the light transmission efficiency of the reflection / transmission type liquid crystal display device of Example 8; 18 is a plan view of a reflection / transmission type liquid crystal display device according to Embodiment 8 of the present invention; O: \ 92 \ 92808.DOC -70- 124013ο Figures 19A to 19F are reflection / transmission types along FIG. 18 &lt; f_f, Embodiment 8 The description of the liquid crystal display device is shown in Fig. 8. The transmission line is a cross-sectional view showing the steps of cutting the reflection region into a convex portion in the transmission system in Fig. 8; A plan view of a photomask in the step; FIG. 22 is a cross-sectional view of a method for measuring the reflection characteristics of a pixel electrode having a high reflection efficiency in a reflective / transmissive liquid crystal display device of Example 8; Conceptual diagram of interference light generation;

24 is a diagram showing the wavelength dependence of the pixel electrodes of the reflective / transmissive liquid crystal display device of Example 8; and FIG. 25 is a scratched view of the transmissive / reflective liquid crystal display device of Example 9 of the present invention; FIG. 26 is a diagram showing the transmittance and reflectance of a gray-scale display in Example 9; FIG. 27 is a chromaticity diagram of a conventional transmission-type liquid crystal display device;

FIG. 28 is a chromaticity diagram of the transmissive / reflective liquid crystal display device of FIG. 9; FIG. 29 is a cross-sectional view of another specific example of the transmissive / reflective liquid crystal display device of Embodiment 9 of the present invention; Plan view of an active array substrate of a liquid crystal display device according to Embodiment 10 of the invention; FIG. 31 is a cross-sectional view taken along line GG of FIG. 30; FIG. 32 is a view of an active array substrate of the liquid crystal display device of Embodiment 11 of the present invention Plan view; Figure 33 is a sectional view taken along line HH of Figure 32;

O: \ 92 \ 92808.DOC -71-124013ο FIG. 34 is a plan view of an active array substrate of a liquid crystal display device according to Example 12 of the present invention; FIG. 35 is a cross-sectional view taken along line I-I of FIG. 34; 36 is a plan view of another specific example of the active array substrate of the liquid crystal display device of Embodiment 12 of the present invention; FIG. 37 is a plan view of the active array substrate of the liquid crystal display device of Embodiment 13 of the present invention; FIGS. 38A to 38D are A cross-sectional view taken along line j_j in FIG. 37 illustrates the method of manufacturing the active array substrate of Example 13; FIG. 39 is a plan view of the active array substrate of the liquid crystal display device according to Example 14 of the present invention; FIGS. 40A to 40D are FIG. 39 is a cross-sectional view taken along the line κ-K in FIG. 39, which illustrates the manufacturing method of the active array substrate of Example I4; FIG. 41 is a plan view of the active array substrate of the liquid crystal display device according to Example 1 of the present invention; 42A to 42C are cross-sectional views taken along the line LL of FIG. 41 and illustrate the method of manufacturing the active array substrate of Embodiment 15. FIG. 43 is a plan view of the active array substrate of the liquid crystal display device of Embodiment 16 of the present invention; A soil 4 4F is a cross-sectional view taken along the line M-M of FIG. 43 and illustrates the method of manufacturing the active array substrate of Example 16. FIG. 45 is a plan view of the active array substrate of the liquid crystal display device of Example 17 of the present invention; 46 is a cross-sectional view taken along the line N-N in FIG. 45; O: \ 92 \ 92808.DOC -72- 1240130 FIG. 47 is another specific example of the active array substrate of the liquid crystal display device according to Embodiment 17 of the present invention 48A to 48C are diagrams illustrating the structure of Embodiment 18, in which the present invention is applied to a simple matrix liquid crystal display device; FIGS. 4A to 4C are diagrams illustrating the structure of Embodiment 18 Figures 50A to 50C are diagrams illustrating the structure of another embodiment 18; Figures 51A and 51B are diagrams illustrating another structure of the embodiment is; and Figure 52 is a conventional liquid crystal display device Sectional view. [Illustration of Symbols in Drawings] 1 Pixel electrode 2 Gate line 3 Source line 4 Thin film transistors (TFTs) 5 Connection electrode 6 Contact hole 7 Gate insulation film 8 Storage capacitor electrode 9 Pair substrate 10 Pair electrode 11 Transparent insulation Substrate 12 Gate 13 Semiconductor layer 14 Channel protection layer 15 Source

O: \ 92 \ 92808.DOC -73- Drain transparent conductive film metal film interlayer insulating film transparent electrode region transparent conductive film reflective electrode region metal film two-color pigment molecules liquid crystal molecules polarizer polarizer phase plate transparent substrate black mask Mold-to-electrode alignment film Liquid crystal layer metal-insulator-metal (MIM) element pixel electrode light source reflective film gate line data line -74- driving element drain storage capacitor electrode gate insulating film insulating substrate contact hole interlayer insulating film Reflective Pixel Electrode Transmissive Pixel Electrode Color Filter Layer Electrode Liquid Crystal Layer Alignment Film Polarizer Backlight Micro Lens Micro Lens Protective Layer Glass Substrate Gate Insulation Film Resist Film Photomask

Round 孑 L

Round 孑 L plate -75- 1240130 64a High convex portion 64b Low convex portion 64a, convex portion 64b, convex portion 65 Polymer resin film 66 Analog glass 67 UV-curable adhesive 68 Transmissive electrode 69 Reflective electrode 70 Active array substrate 71 Thin film transistor (TFT) 72 Gate busbar 73 Gate electrode 74 Source busbar 75 Source electrode 76 Drain electrode 77 Semiconductor layer 78 Contact layer 79 Contact hole 80 ITO layer 81 Metal Layer 81a Bottom electrode 90 Polarizing plate 91 Backlight O: \ 92 \ 92808.DOC -76- 1240130 100 Transmissive / reflective liquid crystal display device 120T Transmissive area 120R Reflective area 140 Liquid crystal layer 160 Substrate (color filter substrate) 1 60T Transmissive electrode area 1 6 0 R Reflective electrode area 162 Insulating glass substrate 164 Color filter layer 166 Transparent electrode 168 Transmissive electrode 169 Reflective layer 170 Insulating layer 201 Transparent insulating substrate 202 Gate line 202a Gate line 203 Source line 203a ITO Layer 203b metal layer 204 thin film transistor 205 drain electrode 206 pixel electrode 207 ITO layer 208 A1 layer O: \ 92 \ 92808.DOC -77- 1240130 209 gate insulation film 210 electrodes 211 n + -Si layer 212 semiconductor layer 213 channel protection layer 214 Mo layer 215 common line 241 conductive film 242 layer 243 drain-pixel electrode connection layer 244 intermediate layer insulating film 245 contact hole 246 layer 247 passivation film 248 contact Layer 249 source 250 bottom electrode 252 resist film 253a bump portion 253b bump portion 254 polymer film 255 connection electrode 256 pair substrate LI light source L2 photomultiplier O: \ 92 \ 92808.DOC -78-

Claims (1)

1240130 Patent application park: 1. A liquid crystal display device for displaying an image containing a plurality of pixels, including: a first substrate; a second substrate; a liquid crystal layer, which is inserted in the first substrate丨 between the substrate and the second substrate; the pixel region corresponds to one of the plurality of pixels j, wherein the pixel region includes a reflective region having light reflectivity and a transmissive region having light transmittance; The light reflected from the reflection area and the light transmitted from the transmission area are displayed as an image; one of the transmission area and the reflection area is arranged in the central part of the pixel, and the transmission area and the reflection area The other is substantially one of the transmission area and the reflection area of the pixel. 2. The liquid crystal display device according to item 1 of the patent application range, wherein the reflection area is disposed at a central portion of the pixel, and the transmission area substantially surrounds the reflection area of the pixel. 3. The liquid crystal display device according to item 1 of the patent application scope, wherein the transmission area is arranged in the central part of the pixel, and the reflection area is substantially surrounded by the transmission area of the pixel. 4. A liquid crystal display device for displaying an image including a plurality of pixels, comprising: a first substrate; a second substrate; and a liquid crystal layer inserted between the first substrate and the second substrate Pixel region, which corresponds to one of the plurality of pixels, O: \ 92 \ 92808.DOC 1240130, wherein the pixel region includes a reflective region having light reflectivity and a transmissive region having light transmittance; The light reflected from the reflection area and the light transmitted from the transmission area are shown by _; the reflection area includes a reflection film, and one surface of the reflection film is uneven. A liquid crystal display device is used for displaying an image including a plurality of pixels. The liquid crystal display device includes: a first substrate; a second substrate; and a liquid crystal layer inserted between the first substrate and the second substrate; The pixel region corresponds to one of the plurality of pixels, wherein the pixel region includes a reflective region having light reflectivity and a transmissive region having light transmissivity; the light reflected from the reflective region and the transmissive region are used The light transmitted through the area displays the image; the thickness of the liquid crystal layer in the transmission area is greater than the thickness of the liquid crystal layer in the reflection area. O: \ 92 \ 92808.DOC