TW509809B - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device according to the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes; a plurality of gate lines; a plurality of source lines arranged to cross with the plurality of gate lines; a plurality of switching elements disposed in the vicinity of crossings of the plurality of gate lines and the plurality of source lines; and a plurality of pixel electrodes connected to the plurality of switching elements. The second substrate includes a counter electrode. A plurality of pixel regions are defined by the plurality of pixel electrodes, the counter electrode, and the liquid crystal layer interposed between the plurality of pixel electrodes and the counter electrode, and each of the plurality of pixel regions includes a reflection region and a transmission region.

Description

509809 A7 B7 V. Description of the invention (1) Background of the invention 1. Field of the invention: The present invention relates to a liquid crystal display device and a method for manufacturing the liquid crystal display device. The present invention particularly relates to a liquid crystal display device having a transmissive display area and a reflective display area in each pixel, and a method for manufacturing the liquid crystal display device. 2. Description of related technologies: Liquid crystal display devices are widely used due to their thinness and low energy consumption. They include office automation (OA) devices such as word processors and personal computers, and portable data devices such as portable electronic schedules. , And a VCR with a liquid crystal detector and a camera. Unlike a CRT display and an electro-optic (EL) display, the liquid crystal display device includes a liquid crystal display panel that does not emit light by itself. Therefore, the so-called transmissive type is often used as a liquid crystal display device, which includes an illuminator called back light on the back or one side, so the amount of light from the back light that penetrates the liquid crystal panel is controlled by the liquid crystal panel to obtain Image display. However, in such a transmissive liquid crystal display device, the backlight consumes 50% or more of the total energy consumed by the liquid crystal display device. Providing backlighting therefore increases energy consumption. In order to overcome the foregoing problems, a reflective liquid crystal display device is used in a portable data device that is often used outdoors or is carried by a user. The reflective liquid crystal display device has a reflector on one of the pair of substrates to replace the backlight and reflect ambient light from the reflection from the surface. This type of reflective liquid crystal display device is in the display mode using a polarizing plate. -4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm).

Description of the Invention (2 operations, such as twisted nematic (TN) mode and super twisted nematic (STN) mode, which are widely used in transmissive liquid crystal display devices. In recent years, a phase-change guest with a brighter display without using a polarizer The model is booming.

The disadvantage of installing a reflective liquid crystal display device using ambient light reflection is that when the surrounding area is dark, the visibility of the display is extremely low. On the contrary, a disadvantage of this transmissive liquid crystal display device is when the environment is bright. That is, the color reproducibility is low, and since the brightness of the display light is lower than that of the ambient light, the display cannot be completely recognized. In order to improve the display quality in bright environment, the intensity of backlight is increased. This situation increases the energy consumption of the backlight and the formed liquid crystal display device. Moreover, when the liquid crystal display device needs to be viewed in a position directly exposed to sunlight or direct light, the display quality is necessarily lowered due to ambient light.

When the display screen of a personal computer is directly exposed to sunlight or light, it is difficult to view its own display. In order to overcome the foregoing problems, a liquid crystal display device having both a transmission mode display and a reflection mode display has been disclosed in, for example, Japanese Laid-Open Publication No. 7_3 3 3 5 98. This liquid crystal display device has a semi-transmissive reflective film that transmits part of the light and reflects part of the light. Fig. 52 shows a liquid crystal display device without using a semi-transmissive reflective film. The liquid crystal display device includes polarizing plates 30a and 30b, a phase plate 31, a transparent substrate 32, a black mask 33, a counter electrode 34, a counter film 35, a liquid crystal layer, a metal-insulator-metal (MIM) element 37, The pixel electrode μ, the light source 39, and the reflective film 40. The pixel electrode 38 is a highly transmissive reflective film, which is composed of metal particles.

509809 A7 B7 V. Description of the invention (3

It is an extremely thin layer or a layer with scattered microporous defects or recessed defects on each pixel. The pixel electrode having such a structure allows light from the light source 39 to penetrate and reflects external light such as natural light and indoor irradiation light, and has both a transmission crack display function and a reflective display function. The conventional liquid crystal display device shown in FIG. 52 has the following problems. First, when an extremely thin layer of deposited metal particles is used as a semi-transmissive reflective film for each pixel, because the absorption coefficient of the metal particles is extremely high, the internal absorption of incident light is extremely large and some light is absorbed and cannot be used for display Therefore, the utilization efficiency of light is reduced. When Wu uses a film with scattered microporous defects or recessed defects as the pixel electrode 38 of each pixel, the structure of the film is too complicated to control and requires more accurate design conditions. Therefore, it is difficult to produce a thin film having uniform characteristics. The reproducibility of the private or optical characteristics of σ is extremely poor, and it is extremely difficult to control the display quality in the aforementioned liquid crystal display device. For example, if an attempt is made to use thin film transistors (TFTs), which have been widely used as switching elements of liquid crystal display devices in recent years, in the liquid crystal display device shown in FIG. The electrodes are formed of I electrodes / connecting materials other than the electrodes. In this case, like a conventional device, a pixel electrode made of a semi-transmissive reflective film is not suitable for forming a storage capacitor. Moreover, even if a transmissive reflective film is formed as a pixel electrode on a part of connection points and elements via an insulating layer, it is difficult for the pixel electrode including a transmission component to increase a numerical al aperture. Further, if light is incident on a semiconductor layer of a switching element such as a metal insulator metal and a thin film transistor, an optical pumping current is generated. Formed as half of light-shielding layer

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A transmissive reflective film is not sufficient to protect the switching element from light. In order to ensure the light-shielding property, another layer of light-shielding film is placed on the pair of substrates. SUMMARY OF THE INVENTION The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate; An applied voltage is defined by the electrodes of the liquid crystal layer, and each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific example of the present invention, the first substrate includes a reflective electrode region corresponding to a reflective region and a transmissive electrode region corresponding to a transmissive region. In another embodiment of the present invention, the reflective electrode region is higher than the transmissive electrode region, and a step is formed on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is smaller than the thickness of the liquid crystal layer in the transmissive region. In another specific embodiment of the present invention, the area of the reflection area occupies about 10 to about 90% of each pixel area. Or the liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate, and the first substrate includes a plurality of gate lines. Multiple source lines that intersect the multiple gate lines; multiple switching elements that are located near the intersection of the multiple gate lines and the multiple source lines; and multiple pixel electrodes that Is connected to the plurality of switching elements, the second substrate includes a counter electrode, and the plurality of pixel regions are composed of the plurality of pixel electrodes, the counter electrode, and the plurality of pixel electrodes and the pair A liquid crystal layer is defined between the electrodes, and each of the plurality of pixel regions includes a reflection region and a transmission region. In a specific example of the present invention, the first substrate includes a reflection corresponding to -7-. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 509809 A7 B7. V. Description of the invention (5) A reflective electrode region and a transmissive electrode region corresponding to the transmissive region. In another embodiment of the present invention, the reflective electrode region is higher than the transmissive electrode region, and a step is formed on the surface of the first substrate, and the thickness of the liquid crystal layer in the reflective region is smaller than the thickness of the liquid crystal layer in the transmissive region. In another embodiment of the present invention, the thickness of the liquid crystal layer in the reflective region is about one-half the thickness of the liquid crystal layer in the transmissive region. In another embodiment of the present invention, each pixel electrode includes a reflective electrode in a reflective electrode region and a transmissive electrode in a transmissive electrode region. In another embodiment of the present invention, the reflective electrode and the transmissive electrode are electrically connected to each other. In another embodiment of the present invention, each pixel electrode includes a transmissive electrode, and the reflective region includes a transmissive electrode and a reflective layer isolated from the transmissive electrode. In another embodiment of the present invention, the reflective electrode region overlaps at least one of the gate lines, the source lines, and the switching elements. In another embodiment of the present invention, at least one of the reflective electrode region and the transmissive electrode region has a material layer that is the same as a material of the gate lines or the source lines. In another embodiment of the present invention, the area of the reflective region in each pixel region accounts for about 10 to about 90%. In another embodiment of the present invention, the first substrate further includes a storage capacitor electrode for forming a storage capacitor with the pixel electrode through an insulating film, wherein the reflective electrode region overlaps the storage capacitor electrode. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 509809 A7 B7 V. Description of the invention (6) In another embodiment of the present invention, the liquid crystal display device further includes a liquid crystal display device located on the first substrate. A microlens on a surface opposite to the liquid crystal layer. In another embodiment of the present invention, each reflective electrode region includes a metal layer and an intermediate layer insulating film located below the metal layer. In another embodiment of the present invention, the metal layer has a continuous wave type. In another embodiment of the present invention, the interlayer insulating layer has a concave shape and a convex shape. In another embodiment of the present invention, the interlayer insulating layer is formed of a photosensitive polymer resin film. In another embodiment of the present invention, the intermediate layer insulation layer covers at least a part of the switching element, the plurality of gate lines, or the plurality of source lines. In another embodiment of the present invention, the reflective electrode is formed at the same height as the plurality of gate lines or the plurality of source lines. In another embodiment of the present invention, the reflective electrode system is located at the same height as the gate lines, and the reflective electrode system is electrically connected to the gate line for a pixel electrode adjacent to the reflective electrode. . In another embodiment of the present invention, the same signal as that applied to the pair of electrodes is applied to the reflective electrode. In another embodiment of the present invention, the reflective electrode is formed at the same height as the plurality of gate lines, and the reflective electrode forms a storage capacitor by overlapping a drain electrode or a transmissive electrode of a switching element. In another embodiment of the present invention, the reflective electrode is formed of aluminum or an aluminum alloy.

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The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 V. Description of the invention (7) In another embodiment of the present invention, the transmission electrode is formed of indium tin oxide, and the metal layer A tether is interposed between the transmissive electrode and the reflective electrode. Another aspect of the present invention provides a method for manufacturing a liquid crystal display device. The crystal display device includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a plurality of gate lines; Source lines, which intersect the gate lines; multiple switch elements, which are located near the intersection 4 of the gate lines and the source lines; and pixel electrodes, which are Connected to the plurality of switching elements, the first substrate includes a counter electrode, and the plurality of pixel regions are composed of the plurality of pixel electrodes, the counter electrode, and sandwiched between the plurality of pixel electrodes and the pair of electrodes. The four liquid crystal layers are defined, and each of the plurality of pixel regions includes a reflection region and a transmission region. The method includes the steps of: forming a transmissive electrode region on a first substrate using a material having a high light transmittance; forming a photosensitive polymer resin layer; and forming a polymer material having a high reflectivity on the polymer resin layer The reflective layer. In a specific embodiment of the present invention, the photosensitive polymer resin layer has a plurality of depressed portions and raised portions. Or provide a method for manufacturing a liquid crystal display device. The liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the first substrate. The first substrate includes a plurality of gate electrodes, a spring, Multiple source lines that intersect the multiple gate lines; multiple switching elements that are located near the intersection of the multiple gate lines and the multiple source lines; and multiple pixel electrodes that are connected For the plurality of switching elements, the second substrate includes a counter electrode, and the plurality of pixel regions are composed of the plurality of pixel electrodes, and the size of the paper is adapted to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Centimeter)

The electrode and the liquid crystal layer sandwiched between the plurality of picture element electrodes and the pair of electrodes are sufficient, and each picture element includes a reflection region and a transmission region. The Hawan method includes the following steps: forming a transmissive electrode region on the first substrate with a material having a transmissivity only; forming a protective film on the extended electrode region; and A layer of highly reflective material is formed on one part of the protective film to form the reflective electrode area. In the example of the carcass published this month, the transmissive electrode region is formed at the same height as the gate lines. -Therefore, the present invention can obtain the advantages of providing a liquid crystal display device having both a transmission mode display and a reflection mode display, in which the utilization efficiency of ambient light and light from the backlight is improved compared to conventional liquid crystal display devices. To obtain superior display quality, and to provide a method for manufacturing the liquid crystal display device. In the liquid crystal display device of the present invention, the display quality obtained in a bright environment is particularly greatly improved. Those skilled in the art can further understand these and other advantages of the present invention after reading the following detailed description with reference to the accompanying drawings. Brief description of the drawings is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 1 of the present invention; FIG. 2 is a cross-sectional view taken along the gitib line; FIG. A plan view of a specific example; FIG. 4 is a plan view of another specific example of the active array substrate of Embodiment 1 of the present invention; -11-This paper scale system τ _ home fresh_) Specifications (2lQ χ tear public love) A7 B7 5 5. Description of the invention (9 FIG. 5 is a plan view partially illustrating an interlayer insulating film and a metal film of a liquid crystal display device according to Embodiment 2 of the present invention; FIG. 6 is a cross-sectional view taken along line c_d of FIG. 5; Sectional view of the liquid crystal display device of Embodiment 3 of the invention; FIG. 8A is a plan view of the active array substrate of the liquid crystal display device of Embodiment 4 of the invention ', and the diagram "is a sectional view taken along line AA of Fig. 8A. Fig. 9 Fig. 10 is a cross-sectional view of another specific example of a liquid crystal display device according to Embodiment 4 of the present invention, which has a microlens; Fig. 1 A is an embodiment of the present invention 4 LCD display A plan view of another specific example of an active array substrate is placed, and FIG. 丨 丨 B is a cross-sectional view taken along line B-B of FIG. 1A; FIG. 12A is a liquid crystal display device according to Embodiment 5 of the present invention FIG. 12B is a cross-sectional view taken along line CC of FIG. 12A, and FIG. 13A is a plan view of the active array substrate of the liquid crystal display device according to Embodiment 6 of the present invention, and FIG. 13B is A cross-sectional view taken along the line DD of FIG. 13A is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 7 of the present invention, and FIG. 14B is a cross-sectional view taken along the line EE of FIG. 14A. FIG. 13 is a cross-sectional view illustrating a reflection / transmission type liquid crystal display device according to Embodiment 8 of the present invention; -12-

DESCRIPTION OF THE INVENTION (10 FIG. 16 is a diagram showing the relationship between the lens aperture ratio and the transmittance and reflectance of the reflective / transmissive liquid crystal display device of Embodiment 8; FIG. 17 is a diagram showing the reflection / transmission of Embodiment 8 Fig. 18 is a plan view of the relationship between the mirror-to-hole ratio and the light transmission efficiency of a liquid crystal display device; Fig. 18 is a plan view of a reflection / transmission / liquid crystal display device according to Embodiment 8 of the present invention; Figs. A cross-sectional view taken along line ρ _ F of FIG. 8 illustrates a method for manufacturing a reflective / transmissive liquid crystal display device of Example 8. FIGS. 2A through 20D are examples of the reflective / transmissive liquid crystal display device of Example 8. A cross-sectional view of a step forming a raised portion in a reflection region; FIG. 21 is a plan view of a photomask used in the step shown in FIG. 20b; FIG. 22 is a view illustrating reflection / transmission of Example 8 A cross-sectional view of a method for reflecting characteristics of a pixel electrode having a high reflection efficiency in a liquid crystal display device; FIG. 23 is a conceptual diagram illustrating the generation of interfering light; and FIG. 24 is a reflection / transmission type liquid crystal of Embodiment 8 The wavelength dependence of the pixel electrode of the tf device; A cross-sectional view of a transmissive / reflective liquid crystal display device of Example 9; FIG. 26 is a diagram showing the transmittance and reflectance of a gray-scale display in Example 9, and FIG. 27 is a color chart of a conventional transmissive liquid crystal display device Fig. 28 is a chromaticity diagram of the transmissive / reflective liquid crystal display device of Fig. 9; Fig. 29 is a sectional view of another specific example of the transmissive / reflective liquid crystal display device of Embodiment 9 of the present invention; -13- This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) V. Description of the invention ~ ^ --- ::-The picture shows the active array substrate of the liquid crystal display device in Example 10 of the present invention FIG. 31 is a cross-sectional view taken along line G_G of FIG. 30; FIG. 32 is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 11 of the present invention; _ H sectional view; FIG. 34 is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 12 of the present invention; FIG. 35 is a sectional view taken along line I-I of FIG. 34; Another active matrix substrate of the liquid crystal display device of Embodiment 12 of the present invention A plan view of a specific example; FIG. 37 is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 13 of the present invention; FIGS. 38A to 38D are cross-sectional views taken along the line of FIG. Array substrate manufacturing method; Figures 3 to 9 are plan views of active array substrates for liquid crystal display devices according to Example 4 of the present invention; Figures 40A to 40D are cross-sectional views taken along the line κ_κ of Figure 39, which illustrate the implementation Example 14 The method of manufacturing an active array substrate; Figure 41 is a plan view of an active array substrate of a liquid crystal display device according to Example 5 of the present invention; the remaining figures 42A to 42C are cross-sectional views taken along lines 41 to L, The method of manufacturing the active array substrate of Example 15 is illustrated; FIG. 4 is the active array substrate of the liquid crystal display device of Example 6 of the present invention. 14-) V. Description of the invention (plan view of the I2 board; Figures 44A to 44F FIG. 45 is a cross-sectional view taken along the line M_M of FIG. 43 and illustrates the method of manufacturing the active array substrate of Example 16; FIG. 45 is a plan view of the active array substrate of the liquid crystal display device of Example 17 of the present invention; N- A cross-sectional view taken along line N; Figures 4 and 7 are examples of the present invention! 7 is a plan view of another specific example of an active array substrate of a liquid crystal display device of FIG. 7; FIGS. 4A to 4C are diagrams illustrating the structure of Embodiment 8; the present invention is applied to a simple matrix liquid crystal display device; Figs. 49A to OC are diagrams illustrating the structure of Embodiment 8; Figs. 5A to 50C are diagrams illustrating the structure of another Embodiment 8; Figs. 51A & 51B are another diagrams illustrating Embodiment 18; Structure, and Fig. 52 is a cross-sectional view of a conventional liquid crystal display device. Description of preferred specific examples (Embodiment 1) Embodiments of the present invention! The liquid crystal display device includes an active array substrate and a transparent counter substrate (such as a glass substrate), which has a counter electrode opposite to the pixel electrode. The liquid crystal layer is sandwiched between the active array substrate and the pair of substrates. Each pair of pixel electrodes used to apply a voltage to the liquid crystal layer and the substrate define a plurality of pixel regions. The pixel region includes a counter electrode and a liquid crystal layer interposed between the counter electrode. This kind of definition can also be applied to a simple matrix type liquid crystal display device having a plurality of scanning electrodes and a plurality of signal electrodes. Each pixel of the liquid crystal display 7F device of the present invention has at least one transmission -15- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 B7 V. Description of the invention (13) And at least one reflection area. The transmission region and the reflection region include a liquid crystal layer and a pair of electrodes sandwiching the liquid crystal layer. The electrode region defining the transmissive region is referred to as a transmissive electrode region 'and the electrode region defining the reflective region is referred to as a transmissive electrode region. FIG. 1 is a plan view of a pixel portion of an active array substrate of a liquid crystal display device of Embodiment 1. FIG. Fig. 2 is a sectional view taken along line a-b of Fig. 1. Referring to Figures 1 and 2, the active array substrate includes pixel electrodes 1 arranged in a matrix. The gate lines 2 for providing a scanning signal and the source lines 3 for providing a display signal are arranged along the periphery of the far pixel electrode 1 so as to intersect each other perpendicularly. The edge portions of the gate line 2 and the source line 3 corresponding to the pixel electrode 1 are overlapped via the interlayer insulating film 19. The gate line 2 and the source line 3 include a metal film. A thin film transistor (TFT s) 4 is formed near each intersection of the gate line 2 and the source line 3. The gate electrode 12 of each thin film transistor 4 is connected to the corresponding gate line 2 to input a signal to the gate electrode 2 via the gate line 2 to drive the thin film transistor 4. The source 15 of the thin film transistor 4 is connected to the corresponding source to receive a data signal from the source line 3. The drain electrode 16 of the thin film transistor 4 is connected to the connection electrode 5, and is electrically connected to the corresponding pixel electrode 1 through the contact hole 6 in sequence. The connection electrode 5 forms a storage with the storage capacitor electrode 8 through the gate insulating film 7. Capacitor. The storage capacitor 8 includes a metal film and is connected to the counter electrode 10 on the counter substrate 9 via an interconnector (not shown). The stray capacitor electrode 8 can be formed with the gate line 2 in the same step. The mother pixel electrodes 1 each include a reflective electrode region 22, which includes a metal film, -16-

509809 A7 B7 Five I Invention Description ~) " and at least one transmissive electrode region 20, which includes an indium tin oxide film. The reflective electrode region 22 covers the gate line 2, the source line 3, the thin film transistor 4, and the storage capacitor electrode 8, and the transmissive electrode region 20 is surrounded by the reflective electrode region 22. The active array substrate of Example 1 having the aforementioned structure is manufactured in the following manner. First, a gate electrode 1 2, a gate wire 2, a storage capacitor electrode 8, and a gate insulation are sequentially formed on a transparent insulating substrate 11 made of a material such as glass. The film 7, the semiconductor layer 13, the channel protection layer 14, the source electrode 15, and the drain electrode 16. After that, a transparent conductive film 17 and a metal film 18 are sequentially deposited by sputtering to form a wiring pattern to form the source line 3 and the connection electrode 5. Therefore, the source line 3 has a double-layered structure including a transparent conductive film 17 and a metal film 18 made of indium tin oxide. With this structure, even if a defect such as a disconnection occurs in the metal film 1 §, the electrical connection can be maintained through the transparent conductive film 17. The possibility of disconnection in the source line 3 is reduced. Thereafter, a photosensitive acrylic resin was applied to the formed substrate by a spin coating method to form an interlayer insulating film 19 having a thickness of 3 m. The acrylic resin is then exposed according to the required wiring pattern and developed using an alkaline solution. Only the exposed portion of the film is etched by the alkali solution to form a contact hole penetrating the interlayer insulating film 19. By adopting such a test solution development method, a contact hole 6 having a perfect cone receiving is obtained. ^ The advantages of using a photosensitive acrylic resin as the interlayer insulating film 19 are beneficial to productivity based on the following factors. Since the spin coating method can be used to form a thin film ', a film as thin as a few microns can be easily formed. Furthermore, it is insulated from this intermediate layer.

509809 A7 B7 V. Description of the Invention (15) When the film 19 is used to make a wiring pattern, a photoresist application step is not required. In this embodiment, the acrylic resin is colored, and it can be made transparent by exposing the entire surface after making the wiring pattern. The hyaluronic acid resin can also be made transparent by chemical processing. Thereafter, a transparent conductive film 21 is formed by sputtering and a wiring pattern is formed to form a transparent conductive film 21. The transparent conductive film 21 is made of indium tin oxide. Therefore, the transparent conductive film 21 is electrically connected to each connection electrode 5 via the contact hole 6. After that, a metal film 23 is formed on the transparent conductive film 21, and a wiring pattern is made to cover the gate line 2, the source line 3, the thin film transistor 4, and the storage guest as the electrode 8 'as the pixel The reflective electrode region 22 of the electrode 1. A portion of the transparent conductive film 21 not covered by the metal film 23 constitutes a transparent electrode region 20. The transparent conductive film 21 and the metal film 23 are electrically connected to each other. Any adjacent pixel electrodes are separated by a portion above the gate line 2 and the source line 3 so that they are not electrically connected to each other. The metal film 23 is made of A1. It can also be made of any conductive material with high reflectivity such as Ta. In this embodiment, as shown in FIG. 2, the liquid crystal layer includes two-color type pigment molecules 24 mixed in the liquid crystal. The absorption coefficient of the dichroic pigment depends on the orientation of the molecules. The alignment of the dichroic pigment molecules 24 is changed by changing the alignment of the liquid crystal molecules 25 by controlling the electric field between the counter electrode 10 and the pixel electrode 1. The change in the absorption coefficient of the dichroic pigment molecule 24 is used to produce an image display. Using the liquid crystal display panel of Example 1 having the foregoing structure, the display can be used in accordance with China National Standard (CNS) A4 (210 X 297 mm).

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V. Description of the invention (16) Effective use of light, use of light transmitted through the transmissive electrode area 20 when the ambient light is low, and light reflected by the reflective electrode area 22 when the ambient light is high . In addition, the two regions of the transmissive electrode region 20 and the reflective electrode region 22 can be used to generate a display. In addition, a liquid crystal display device having a bright display can be obtained. In this embodiment, the metal film 23 of the reflective electrode region 22 of the pixel electrode 1 covers the thin film transistor 4, the gate line 2, and the source line 3. It is not necessary to provide a light-shielding film to prevent light from entering the thin-film transistor 4, and the pixel electrode is located on the gate line, the source line, and the light-shielding portion of the storage capacitor electrode. One of these areas is apt to produce light leakage in the form of functional areas, conversion lines, etc. in the special display area. As a result, a region that cannot be used as a display region conventionally because it is shielded by a light-shielding film can be used as a display region. In this case, the display area is effectively used. When the gate line and the source line are made of metal, they serve as a light-shielding area in a transmissive display device, but cannot be used as a display area. However, in the liquid crystal display device of this embodiment, the area serving as the light shielding area in the conventional transmission type display device can be used as the reflective electrode area of the pixel electrode. Therefore, a brighter display can be obtained. In this embodiment, the metal film 23 is located on the transparent conductive film door. In this case, the metal film 23 has a non-uniform surface that conforms to the uneven surface of the transparent conductive film 21 and has a non-smooth surface. The non-uniform surface of the metal film is better than a flat surface because the uneven surface receives ambient light at various incident angles. The resulting liquid crystal display device provides a brighter display. Figures 3 and 4 are another example of a liquid crystal display device according to an embodiment of the present invention. 19- The paper rule money_Household (—) City grid's public love 509809 A7 B7 V. Description of the invention (II body A plan view of an example. In these alternative embodiments, the area ratio of the transmissive electrode region 20 to the reflective electrode region 22 of each pixel electrode i is changed from that in FIG. I. According to this method, we obtain A liquid crystal display device having the required reflectivity and transmittance. In the alternative embodiment shown in Figs. 3 and 4, the connection electrode 5 is located in the reflective electrode region 22. This condition inhibits passing through the transmissive electrode. The brightness of the light in the region 20 is reduced. In the embodiment 1, the metal film 23 of the reflective electrode region 22 of the pixel electrode i is located on the transparent conductive film 21. Or, as shown in FIG. 6, the metal film 2 3 It may only partially overlap with the transparent conductive film 21 to be electrically connected to each other. (Embodiment 2) In Embodiment 2, a method for forming an uneven hook surface of the metal film 23 is described. FIG. 5 is a part A plan view of the metal film 2 j on the interlayer insulating film 19 (not shown) will be described. FIG. 6 It is a cross-sectional view taken along line c_d in Fig. 5. The surface of the M interlayer insulating film 19 is made uneven by etching or the like, and a metal film 23 is formed on the uneven surface. Therefore, by Firstly, a metal film 23 is formed on the planar interlayer insulating film 19 by a method such as spin coating, and then the surface is made non-uniform as described above, and a metal film 23 having an uneven hook surface can be obtained. In a display device, the uneven surface of the metal film 23 is better than a flat surface because the uneven surface receives ambient light at various angles. Therefore, the metal film 23 of the pixel electrode is formed on the interlayer insulating film 19 With a non-uniform hook surface as shown in Figure 6, a reflective liquid -20- A7 ^ ~~ -B7_ true, description of the invention --- crystal display device provides a brighter display. The metal film 2 3 The uneven surface; Ding Shihuo Min%, J -J clothing surface is not limited to the shape shown in Figure 5, that is, the surface with a circular flat recessed portion. Or the surface of the metal film 23 and the bottom layer of the insulating film The surface of 19 may have a flat polygon or an oval depression The cross section of the recessed portion of Wei may have a polygonal shape instead of the semi-circular shape shown in FIG. 6. (Embodiment 3) In Embodiment 3, a liquid crystal display device using a guest-host display method is described. FIG. 7 is the present invention A cross-sectional view of the liquid crystal display device of this embodiment. The same components as in embodiment 1 are denoted by the same numbers as in FIG. 2. When the guest-host display method is used, a mixture of guest-host liquid crystal materials is used, which contains a black pigment and 0.5% optical rotation. ZLI 23 27 (manufactured by Merck & Co., Inc.) and S-811 (manufactured by Merck & Co., Inc.) have the following problems. That is, when the backlight is used, if the optical path length dt of the light transmitted by the self-illumination light in the transmission area is greatly different from the optical path length 2 dr of the light reflected from the ambient light in the reflection area, then the light from the backlight And the use of ambient light, even if the same voltage is applied to the liquid crystal layer, the resulting display brightness and contrast are extremely different. Therefore, the thickness dt of the portion of the liquid crystal layer on the transparent conductive film 21 in the transmission region and the thickness of the liquid crystal. The thickness dr of the portion of the layer on the metal film 23 in the reflection region should be set to satisfy the relationship d t = 2 d r. Therefore, in this embodiment, the thickness of the metal film 23 becomes to satisfy this relationship. Therefore, by making the optical path length dt of the light transmitted by the self-illuminated light in the transmission area and the optical path length of the light reflected from the ambient light in the reflection area 2dr-1 21-this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 509809 A7 B7 V. Description of the invention (19) This balance can obtain substantially the same brightness and contrast regardless of the type of light (light from backlight or light from ambient light). The condition is that the same voltage is applied to the liquid crystal layer. According to this method, a liquid crystal display device having better display characteristics is obtained. By making the optical path length dt of the light transmitted by the self-illuminating light in the transmission area and the optical path length 2 dr of the light reflected from the ambient light in the reflection area approximately the same-not necessary to balance-the brightness averaged to a certain degree can be obtained And contrast. No matter what type of light is used (light from backlight or light from ambient light), the contrast can be made uniform by changing the distribution voltage applied to the liquid crystal layer, even if the self-illumination light is transmitted in the transmission area. The same is true when the optical path length dt of the light is significantly different from the optical path length 2dr of the light reflected from the ambient light in the reflection area. Therefore, in the liquid crystal display devices of the foregoing embodiments 1 to 3, a single substrate is used for the transmission mode display and the reflection mode display, and the area traditionally shielded by a black mask can be used as the reflective electrode area of each pixel electrode. In this case, the display area of the pixel electrodes of the liquid crystal panel can be effectively used, and the brightness of the liquid crystal display device can be increased. In Embodiments 1 to 3, the storage capacitor electrode can be used to form a storage electric guest with each pixel electrode through an insulating film, and the reflective electrode region of the pixel electrode covers the storage capacitor electrode. Therefore, the area where the storage capacitor electrode is formed can be used to display TF 'as the reflective electrode area of the pixel electrode. The metal film of the reflective electrode region of each pixel electrode is located on the transparent conductive film. Using a transparent conductive film with an uneven surface, the reflective electrode area of the pixel electrode formed has an uneven surface so that it can be used with a variety of incidences. 22- This paper is compliant with China National Standard (CNS) A4 specifications (210 X 297 mm) 509809 A7 B7 5. The ambient light at the angle of the description of the invention (M) is used as the display light. The metal film of the reflective region of each pixel electrode may be located on the interlayer insulating film having an uneven surface. The reflective electrode area of the formed pixel electrode has a non-uniform surface, so that it can use ambient light with various incident angles as display light. The metal film in the reflective electrode region of each pixel electrode is thicker than the transparent conductive film in the transmissive region of the pixel electrode. Ambient light passes through and returns the length of the light path of the portion of the liquid crystal layer located in the reflective electrode area of the pixel electrode, and the length of the light path of the light from the backlight passing through the liquid crystal layer in the portion of the transparent electrode area of the pixel electrode. Approximately equal, and compare the path length to each other. By knowing the approximate optical path length, it is possible to adjust uniformly the change in the light characteristics of the liquid crystal layer located in the reflection region and the transmission region. The thickness of the portion of the liquid crystal layer located on the reflective electrode region of each pixel electrode is half of the thickness of the portion of the liquid crystal layer located on the transmissive electrode region. This allows ambient light to pass through and return the light path length of the portion of the liquid crystal layer located in the reflective electrode area of the pixel electrode, and light from the backlight passing through the portion of the liquid crystal layer located in the transparent electrode area of the pixel electrode The path lengths are approximately equal and the path lengths are compared to each other. By knowing the approximate optical path length, it is possible to uniformly change the light characteristics of the liquid crystal layer located in the reflection region and the transmission region. (Embodiment 4) FIG. 8A is a plan view of a pixel portion of an active array substrate of a liquid crystal display device according to Embodiment 4 of the present invention. Fig. 8B is a sectional view taken along line A-A in Fig. 8A. The active array substrate of this embodiment includes gate line 4 1, data line 4 2, drive -23- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm)

Moving element 4 J drain electrode 4 4. Storage capacitor electrode 4 5. Gate insulation film 4 6 ′, bar, 彖 substrate 4 7. Contact hole 4 8. Interlayer insulation film 4 9. Reflective pixel electrode 5 0 And the transmissive pixel electrode 51. Each of the storage guest electrodes 45 is electrically connected to a corresponding drain electrode 44 and overlaps the gate line 41 through a gate insulating film 46. The contact hole "penetrates through the interlayer insulating film 49 and is connected to the transmission pixel electrode 51 and the storage capacitor electrode 45. Each pixel of the active array substrate having the aforementioned structure includes a reflection pixel electrode 50 and a transmission Pixel electrode 51. Therefore, as shown in FIG. 8B, each pixel includes a reflective electrode region including a reflective pixel electrode 50, which reflects external light, including a transmissive pixel electrode 51, which transmits light from the backlight Fig. 9 is a cross-sectional view of the liquid crystal display device of this embodiment, including the tf foot motion array substrate shown in Figs. 8a and 8B. The liquid crystal display device also includes a color filter layer 53, a counter electrode 54, a liquid crystal layer 55, The alignment film 56, the polarizing plate 57, and the backlight 58. The transmissive pixel electrode 5 1 (transmission electrode region) allows light from the backlight 5 8 to pass through 4 areas, and the panel is faced when the backlight 5 8 is turned off. The brightness of the panel does not contribute. On the contrary, the area where the reflective pixel electrode (reflective electrode area) reflects external light can increase the brightness of the panel regardless of whether the backlight 5 8 is in the on / off state. In the pixel, The area is larger than the area of the transmissive electrode region. In this embodiment, the reflective pixel electrode 50 is located on the corresponding transmissive pixel electrode 51 to be electrically connected to each other so that the reflective pixel electrode 50 and The same signal is applied to the transmissive pixel electrode 51. Or the reflective pixel electrode 50 and -24- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love)

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509809 A7 B7 V. Description of the invention (22

The transmissive pixel electrodes 51 are not electrically connected to each other to receive different signals for different indications. ^ In the liquid crystal display device shown in FIG. 9, part of the light from the backlight “but incident on the reflective pixel electrode 50 cannot be used as display light. In order to overcome this problem, the modified liquid crystal display shown in FIG. 10 The device includes a microlens 59 and a microlens protective layer 60 for each pixel. With this structure, light from the backlight 58 is collected via the microlens 59 on the portion of the transmission electrode region where the reflective pixel electrode 50 is not formed, Increasing the amount of light transmitted through the transmission area to improve display brightness. Figure 1 A is a plan view of a pixel portion of a replacement active array substrate for a liquid crystal display device according to Embodiment 4 of the present invention. Figure 1 1 B is a view along Figure 1 1 The cross-sectional view taken along line b_b of a. In the active array substrate shown in Figs. 11A and 11B, the area of the transmitted pixel electrode 51 and the area of the reflective pixel electrode 50 of each pixel are shown in Figs. 8A and 8B. The active array substrate is opposite. The ratio of the area of the reflective pixel electrode 50 to the area of the transmissive pixel electrode 51 can be appropriately changed. When the active array substrate shown in FIGS. 8A and 8B is the same as that shown in FIGS. 1A and 1 Comparison shown in 1B 'The advantage of the active array substrate shown in FIGS. 8A and 8B is that the reflective pixel electrode 50 is located on the driving element 43 to prevent external light from entering the driving element 43, and because the transmissive pixel electrode 51 area is located in each The center of the pixel makes it easier to form a micro lens 59 for collecting light. In this embodiment, because the reflection area and the transmission area are located in a pixel, the pixel aperture ratio of the pixel is as large as possible. To meet this demand, this embodiment uses a high mirror-to-hole ratio structure, which includes an interlayer insulating film of an organic insulating film-25. This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm)

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Line A7 B7 V. Description of the Invention (23) The 4-9 series is sandwiched between the pixel electrode and the gate line 4 丨 and the source line 43. Other structures can also be used. (Embodiment 5) FIG. 12A is a plan view of a pixel portion of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention. Fig. 12B is a sectional view taken along the line C-C of Fig. 12a. In the active matrix liquid crystal display device of Embodiment 5, a reflective pixel electrode 50 is formed on the inclined or recessed portion and the raised portion of the interlayer insulating film 49. The external light is thus reflected by the reflective pixel electrode 50 within a wide alignment range, so the visible angle becomes wider. In this embodiment, the portion of the interlayer insulating film 49 located on the gate line 4 丨 and the source line 4 2 is the thickest, and the portion located on the drain 44 is completely etched to form an inclined or recessed portion and a raised portion. This situation eliminates the need to form a contact hole for electrically connecting the drain 44 to the reflective pixel electrode 50, and prevents disordered alignment of liquid crystal molecules due to the steep order of the contact hole. This situation increases the mirror-to-hole ratio. In this embodiment, the drain electrode 44 is a transparent electrode made of indium tin oxide and is used as the transmission pixel electrode 51. The inclination angle of the inclined portion or the depressed portion and the raised portion of the interlayer insulating film 49 should be small enough to form an alignment film on the formed substrate and rub it. Therefore, the optimal conditions should be determined based on the individual friction conditions and the type of liquid crystal molecules. In this embodiment, as in Embodiment 4, a micro-lens can be provided under the drain 44 as the transmission pixel electrode 51 to improve the display brightness when the backlight is connected. ^ -26 · The paper size is suitable for financial reasons ^^ (CNS) iron grid "χ Norwegian public love" 509809 A7 B7 V. Description of the invention (24) (Embodiment 6) Figure Ϊ3A is a liquid crystal display device according to Embodiment 6 of the present invention Figure 13B is a plan view of the pixel portion of the active matrix. Figure 13B is a cross-sectional view taken along the line A and DD. * In this embodiment, in the same step, it is the same as the closed pole line 41. The high-yield formation of the reflective pixel electrode 5G. With this structure, because the individual steps of forming the reflective pixel electrode 50 are not needed, there is no need to increase the number of steps and manufacturing costs. In this embodiment, the reflective pixel The electrode 5G is not connected to the drain 44 ′ of the driving element 43, but only for reflecting external light. Only the transmissive pixel electrode 51 is used as an electrode for driving the liquid crystal. In other words, the light reflected by the reflective pixel electrode 50 is The light transmittance is controlled by controlling the liquid crystal layer using the voltage of the transmissive pixel electrode 51. If no signal is input to each reflective pixel electrode 50, the reflective pixel electrode 50 and the corresponding drain electrode 44 or transmission image Floating capacitance is generated between the element electrodes 51. To avoid this problem The reflective pixel electrode 50 should have a sign that will not have a negative impact on the display. By connecting each reflective pixel electrode 50 to the adjacent gate line 4 丨, the formation of floating capacitance can be avoided, and the reflection A storage capacitor is formed between the pixel electrode 50 and the corresponding drain electrode 44. In this embodiment, as in Embodiment 4, the micro lens can focus light on the transmitted pixel electrode, thereby improving the display brightness when the backlight is connected. In this embodiment, because the reflective area and the transmissive area are also formed on a pixel, the pixel hole ratio of the pixel is as large as possible. In order to meet this requirement, a high mirror hole ratio structure is used, in which an organic insulating film is used As an interlayer insulating film. Also-27- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 ^ ----— — One B7 V. Description of the invention (25) ~ ^ Yes Other structures are used. (Embodiment 7) Fig. 14A is a plan view of a pixel portion of an active array substrate of a liquid crystal display device according to Embodiment 7 of the present invention. Fig. 4B is e-F along Fig. 4a The cross-section and surface view obtained from the line. The electrode 50 is formed at the same height as the source line 42. With this structure, since the reflective pixel electrode 50 can be formed when the source line 42 is formed, the number of steps and manufacturing cost are not increased. This implementation In the example, 'because of the high mirror-hole ratio structure that penetrates the interlayer insulating film 49', the reflective pixel electrode 50 is only used to reflect external light. Only the transmissive pixel electrode 51 is used as an electrode for driving the liquid crystal. The difference between the embodiment and the embodiment 6 is that the reflective pixel electrode 50 in each pixel is electrically connected to the corresponding drain electrode 44. In another case, the intermediate layer insulating film is not formed on the drain electrode 44 49, and the drain 44 is a transmissive pixel electrode, and the reflective pixel electrode 50 is also used to drive liquid crystal molecules. In this embodiment, as in Embodiment 4, a microlens can be provided to focus light on the transmissive pixel electrode 51, and to improve display brightness when the backlight is connected. Moreover, in this embodiment, since the reflection region and the transmission region are formed in one pixel, the mirror hole ratio is as large as possible. In order to satisfy such a condition, a high mirror hole ratio structure using an organic insulating film as an interlayer insulating film is adopted. Other structures can also be used. Therefore, in Embodiments 4 to 7 of the present invention, an active matrix liquid crystal display device capable of switching between a reflective type and a transmissive type is obtained. The liquid crystal display device can be used by the user in transmissive and anti--28 according to the conditions of use. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 B7 V. Description of the invention (26) Switch the use mode, and provide sufficient brightness regardless of the use conditions, while reducing energy consumption and extending the use time. A transmissive / reflective switchable active-array liquid crystal display device is also obtained, which can be used as a reflective liquid crystal display device in a bright environment and as a transmissive liquid crystal display device in a dark environment. Because the reflective pixel electrode and the transmissive pixel electrode are electrically connected to each other, there is no need to provide an interconnection of the driving signal separately. This simplifies the structure of the active array substrate. When a reflective pixel electrode is formed on the upper layer of the driving element, external light is prevented from entering the driving element. The transmissive pixel electrode does not contribute to the brightness of the panel when the backlight is turned off, and the reflective pixel electrode contributes to the brightness of the panel regardless of whether the backlight is on / off. Therefore, by increasing the area of the reflective pixel electrode, even if the backlight is cut off or less light is emitted, the display brightness can be stabilized. The light from the backlight which is blocked by the reflective pixel electrode, the gate line, etc. can be converged on the transmissive pixel electrode. In this way, the brightness of the display device can be increased without increasing the brightness of the backlight. The reflective pixel electrode can reflect external light with a wide orientation. Therefore, a wider viewing angle can be obtained. The reflective pixel electrode can be formed without adding additional steps. This prevents an increase in the number of steps and manufacturing costs. The reflective pixel electrode can be electrically connected to the gate line. This prevents the generation of floating capacitance, and can form a storage capacitor with a drain. -29- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 509809 A7 —-_____ B7 V. Description of the invention (27) The reflective pixel electrode can have the same signal as the counter electrode. This prevents floating electric guests. Moreover, the reflective pixel electrode can be used to form a storage capacitor for use in a voltage applied to the pixel electrode. (Embodiment 8) In Embodiment 8, a reflection / transmission type liquid crystal display device of the present invention is described. First, the principle of generating interference colors in the liquid crystal display device of Example 8 will be described. Figures 2 and 3 are conceptual diagrams illustrating the generation of interference colors. Light is incident on the glass substrate. The incident light is reflected by the reflective film and output from the glass substrate. In the foregoing case, when the light incident at the incident angle is reflected from the convex and concave portions of the reflective film and output at the output angle 0, it is considered to produce an interference color. The light path difference between the two reflected light beams is represented by the following formula (1): where 0 i 'is the incident angle of the concave portion of the reflective film, 0 0 · is the concave portion of the reflective film, and L is the two light beams on the glass substrate. The distance between the incident points above, h is the height of the point where the concave portion of the reflective film reflects the light beam relative to the point where the concave portion of the reflective film reflects another light beam, and η is the refractive index of the glass substrate. Because formula (1) is only βί: and 6 ^ · = < 9〇 · can be calculated, when 6 ^ = (90 = 0 and 6 ^ '= 0〇' = (9 ·, the light The diameter difference 5 is simplified into the following formula (2): -30- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Description of the invention (28 δ = 1ι {2n / c 〇sG, — 2 tane · · Sin0} ...... (2) When arbitrary wavelengths λΐ and; 12 are considered, the output beam reflected from the convex and concave portions is at 5 / λ l == m ± l / 2 (m is made to be an integer) eyes weaken each other, and strengthen each other at δ / λ 2 = m. Therefore, the following formula (3) is obtained. δ = (1 / λ1 — 1 / λ2) = 1/2 .... ... (3) The above formula (3) is also expressed as the following formula (4): δ = (λ1 · λ2) / 2 · (λ2 —λΐ) ....... (4) Equations (2) and (4) 'The direction h can be expressed as the following equation (5): According to the foregoing equation, it is found that in order to avoid interference colors, the reflective surface of the reflective film should have a continuous wave type. In this embodiment, In order to form the reflective film, at least two convex portions having different heights are formed on a substrate, and a polymer resin film covering the convex portions is formed on the substrate. A reflective film made of a material with high reflectivity is formed on the polymer resin film. The manufactured reflective film can be used for the reflective portion of a reflective / transmissive liquid crystal display device because the reflective portion has a continuous wave type reflection Surface, it can prevent the light reflected from the reflection part from interfering. When the convex part is formed optically by using a photomask, it can be good again by setting the same illumination conditions. CNS) A4 specification (210X 297 mm) 509809 A7 —- ______B7 V. Description of the invention (^) ——— '" Formed under current conditions. In the reflection / transmission type liquid crystal display device of this embodiment, The ridges and convexes are not formed in the transmissive portions made of the transmissive material to improve the M transmission efficiency. However, even if the ridges and convexes are formed in the transmissive portion, the transmitted light can still be displayed. A cross-sectional view of an example reflection / transmission type liquid crystal display device. Referring to FIG. 15, a gate insulating film 6 丨 α is formed on a glass substrate 61. The glass substrate 61 is located at Highly convex portions 64a and low convex portions 64b are arbitrarily formed on portions of the lower layer of the reflective electrode 69 having a reflective function. The high convex portions 64a and low convex portions 64b are covered with a polymer resin film 65. Because the high convex portions The portion 6 4 a and the low ridge portion 6 4 b are formed on the glass substrate 61 through the gate insulating film 61 a. Therefore, the polymer resin film 65 is located on the high ridge portion 64 a and the low ridge portion 64 b. The upper surface of the portion has a continuous wave pattern. The polymer resin film 65 is located on almost all surfaces of the glass substrate 61, and not only in the lower layer region of the reflective electrode 69. The reflective electrode 69 is made of a material having a high reflection function, and is located on a portion of the polymer resin film 65 having a continuous wave shape on the high ridge portion 6 "and the low ridge portion 64b. The transmission electrode .6 8 It is also located on the glass substrate 61 via the gate insulating film 6 1 a, and is separated from the reflective electrode 69. The transmissive electrode 68 is made of a material having a high light transmitting function, such as indium tin oxide (ITO). Polarizing plate 9 0 is attached to the back of the manufactured active array substrate when the device is a module. After that, the backlight 9 1 is placed on the polarizing plate 90. -32- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 509809 A7 _______ B7 V. Description of the invention (30 ~~) Part of the light emitted from the backlight 9 1 and directed to the transmission electrode 6 8 passes through the transmission electrode 68 and the subsequent active array substrate However, a part of the light directed toward the reflective electrode 69 is reflected from the back surface of the reflective electrode 69 to the back light 91. Since the back surface of the reflective electrode 69 has a continuous wave shape, the reflected light from the reflective electrode 69 is shown in FIG. The arrows of 5 scatter as shown. The scattered light is then reflected from the backlight 91 to the active array substrate. A part of the light passes through the transmission electrode 68 and the subsequent active array substrate. Therefore, in the active array substrate including the reflective electrode 69 having the aforementioned shape, From the backlight, the light reflected by the reflective electrode 69 can be used for display. Unlike conventional transmissive liquid crystal display devices, this can use light more effectively than the actual mirror hole than predicted. In particular, if the reflective electrode Having a planar shape mainly produces a rectangular reflection, so it is difficult to reflect again and pass through the transmission electrode 68. However, in this embodiment, the reflection electrode 68 having a continuous wave shape is used to return the reflected light to the backlight. The lower part of the transmissive electrode 68 uses light more efficiently. Figure 16 shows the reflectivity of the reflective electrode 6 9 and the backlight 9 1 is about 90% compared with a standard white board, and the polarizing plate 9 When the light transmittance of 0 is about 40%, the relationship between the mirror hole ratio and the light transmittance and reflectivity is plotted. This relationship is based on the assumption that the pixel electrode covers the entire display surface without considering the busbar and Calculate under the existence of the active element. As shown in FIG. 16, the reflectivity of the reflective electrode 69 that is incident on the side of the substrate from the outside is multiplied by the reflectivity of the reflective electrode 69 and the reflection. The ratio of the area of the electrode 6 9 to the area of the entire pixel electrode is calculated. The transmittance of the transmission electrode 6 8 used for the backlight 9 1 is not exactly the same as the mirror -33- This paper size applies to Chinese national standards ( CNS) A4 specification (210X 297 mm) 509809 A7 B7) 5. Description of the invention (3l hole ratio a (ie, the ratio of the area of the transmissive electrode 6 to the area of the whole pixel electrode), and the value b, including from the backlight The light component 'reflected by the reflective electrode $ 9' can be used as a display added to the mirror aperture ratio a. Therefore, unlike the conventional transmission type liquid crystal display device, since the light from the backlight 91 is reflected by the reflective electrode 69, the light can be used more efficiently than the actual mirror hole than predicted. Figure 17 is a graph showing the relationship (transmittance / mirror ratio) between the mirror aperture ratio and the transmission efficiency. As shown in FIG. 17, according to the calculation, it is learned that when the mirror-to-hole ratio is 40%, the utilization ratio of light from the backlight 9 1 and reflected by the reflective electrode 6 9 is directly from the backlight 9. 1 50% of the light intensity through the transmitting electrode 68. According to the calculated values shown in FIG. 17, it is also found that the larger the ratio of the area of the reflective electrode 69 to the area of the entire pixel electrode, the higher the utilization rate of the light reflected by the reflective electrode 69. A specific example of the reflective / transmissive liquid crystal display device of Embodiment 8 will be described below. FIG. 18 is a plan view of a reflective / transmissive liquid crystal display device according to Embodiment 8 of the present invention. 19A to 19F are cross-sectional views taken along the line F-F of FIG. 18 and illustrate a method of manufacturing the liquid crystal display device of this embodiment. Referring to FIGS. 18 and 19 F 'The active / active array substrate of the reflective / transmissive liquid crystal display device includes a plurality of gate bus lines 7 as scanning lines and a plurality of source bus lines 7 4 as signal lines , Their lines cross each other. In each rectangular area surrounded by the adjacent gate bus line 72 and the adjacent source bus line 74, a transmissive electrode 68 made of a material having high light transmission efficiency and a reflective electrode 68 made of a material having high reflectivity are placed. Material made of reflective electrode 69. The transmissive electrode 68 and the reflective electrode 69 constitute a pixel electrode. -34- This paper size applies to China National Standard (CNS) A4 (210X 297mm)

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509809 A7 __ _B7 V. Description of the invention (32) The gate private pole 7j extends from the far gate bus bar 72 to the pixel electrodes located at the corners of each area where pixel electricity k is formed. A thin film transistor (Tρτ) 71 is connected to a terminal of the gate electrode 73 as a switching element. The gate electrode 73 itself constitutes a part of the thin film transistor 71. The thin film transistor 7 1 is located on the gate electrode 7 3 located on the glass substrate 6 丨, as shown in FIG. 19F. The gate electrode 73 is covered with a gate insulating film 61 & and a semiconductor layer 77 is formed on the gate insulating film 61a to cover the gate electrode 73 through the gate insulating film 61a. A pair of contact layers 78 are formed on side portions of the semiconductor layer 77. The source electrode 75 is located on a contact layer, and is electrically connected to the corresponding source bus bar 74. The side surface portion of the source electrode 75 is overlapped with the gate electrode 73 according to the insulation method to constitute a part of the thin film transistor 71. A drain electrode%, which also constitutes a part of the thin film transistor 71, is formed on another contact layer 78, away from the source electrode 75 and overlapping with the gate electrode 73 according to the insulation method. The drain electrode 76 is electrically connected to the pixel electrode via the bottom electrode 8 1 a. The storage capacitor is formed by forming the low-layer electrode 8 1 a, and it overlaps with the gate bus line 72 of the adjacent pixel electrode for the subsequent pixel row through the interlayer insulating film 6 1 a. The bottom electrode sia may be located on a substantially entire area, and as described below, a raised portion is formed so as to uniformly influence the formation of the layer. A high raised portion 64a and a low raised portion are formed under each reflective electrode 69 Portion 64b and top polymer resin film 65. The upper surface of the polymer resin film 65 has the convex portions 64a and -35- This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210X 297 mm) ____B7 V. Description of the invention (33) 6 4 b The continuous wave of existence. The polymer resin film 65 is formed on the surface of the substantially monolithic glass substrate 61, instead of being located only in a region under the reflective electrode 69. In this embodiment, for example, Tokyo Ohka Co.,

Ltd. made FPR-8800 as the polymer resin film 65. The reflective electrode 69 is located on a portion of the polymer resin film 65 having a continuous wave shape, and is located on the high ridge portion 64a and the low ridge portion 64b. The reflective electrode 69 is made of a material having high reflection efficiency, such as A1. The reflective electrode 69 is electrically connected to the corresponding drain electrode 76 through the contact hole 79. In the reflective / transmissive liquid crystal display device of this embodiment, the transparent electrode 68 is separated from the reflective electrode 69. The transmissive electrode 68 is made of a material having a high transmissivity such as indium tin oxide. A method for forming the reflective electrode 69 and the transmissive Hongji 68, which is a main part of the reflective / transmissive active array substrate 70, will now be described with reference to FIGS. 19A to 19F. First, as shown in FIG. 19A, a plurality of gate bus bars 72 (see FIG. 18) made of a material such as Cr and Ta are formed on a glass substrate 61, and extend from the gate bus bars 72. A gate insulating film 6 1 a made of a material such as SiNx, SiOx, or the like is formed on the entire surface of the glass substrate 61 to cover the gate bus bar 72 and the gate electrode 73. A semiconductor layer 77 made of a material such as amorphous silicon (a-Si), polycrystalline silicon, or CdSe is formed on a portion of the gate insulating film 6a located on the gate electrode 73. Formed on both side portions of each semiconductor layer 77-a contact layer 78 made of a material such as a_Si. -36- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 B7 V. Description of the invention (34) Formed on one of the contact layers 78 and made of Ti, Mo, A1 and other materials The source electrode 7 5 ′ is formed on the other contact layer 78 with a drain electrode 76 made of Ti, jyj0, A1, or other materials. In this embodiment, a product of No. 705 9 having a thickness of 1.1 mm manufactured by Corning Inc. is used as the material of the glass substrate 61. As shown in FIG. 19B, a metal layer 81 constituting a part of the source bus bar 74 is formed by the hidden shot. This metal layer 81 can also be used to form the bottom electrode 81 &. After that, as shown in FIG. 19C, an indium tin oxide layer 80, which also forms a part of the source bus bar 74, is formed by sputtering and wiring pattern formation. Therefore, in this embodiment, the source bus bar 74 has a double-layer structure composed of a metal layer 81 and an indium tin oxide layer 80. The advantage of this double-layer structure is that even if the metal film 8 1 constituting the source bus bar 74 is partially defective, the electrical connection of the remote source bus / non-bus bar 74 can still be made of a steel oxide tin layer. maintain. This reduces the possibility of disconnection of the source bus bar 74. The indium tin oxide layer 80 is also used to form the transmissive electrode 68. This makes it possible to form the transmissive electrodes 68 at the same time as the source bus bars 74 are formed, thereby preventing the number of layers from increasing. Thereafter, as shown in Fig. 19D, circular convex portions 64a and 64b having a substantially circular cross section are formed using a photosensitive resin resist film on the region where the reflective electrode 69 is to be formed. It is preferable that the ridges 64a and 64b are not located on the transmission electrode 6 8 so that a voltage is effectively applied to the liquid crystal layer. However, when the convex and convex portions 64a and 64b are formed on the transmissive electrode 68, there is no great optical influence. The method of forming the raised and raised portions 64a and 64b in the reflective electrode region is briefly described below with reference to FIGS. 20A to 20D. -37- This paper size applies Chinese National Standard (CNS) A4 specification (210X297mm) 509809 A7 ___ B7 V. Description of the invention (35) First, as described in Figure 20A, the glass substrate 61 (actually The upper layer has a metal layer 81 and a bottom electrode 81 a) on the metal layer 81. A resist film 62 made of a photosensitive resin is formed thereon. This resist film is formed using the same photosensitive resin as the polymer resin film 65 described later, namely OFPR-800, using a spin coating method at a rotation speed of about 5,000 to about 3,000 revolutions per revolution. It is preferably in the range of minutes. In this embodiment, the thickness is 25 micrometers at 1500 rpm 'over 30 seconds. After that, the glass substrate 6 with the resist film 62 on the upper layer is pre-baked for 30 minutes under the following conditions. < As shown in FIG. 20B, a photomask 6 3 is placed on the resist film 62. The edge photomask has the shape shown in FIG. 21, for example, it includes two circles that penetrate the plate 63c. Holes 63a and 63b. The photomask 63 is then illuminated from above as shown by an arrow. The photomask of this embodiment has a circular hole 6 3 a with a diameter of 5 μm and a circular hole with a diameter of 3 μm, which are arbitrarily arranged. The gap between any adjacent patterned holes should be at least about 2 microns. However, if the gap is too large, it will be difficult to obtain a continuous wave pattern for the polymer resin film 65 to be formed on the upper layer later. The formed substrate is developed using a developer having a concentration of 2.38%, such as NMD-3 manufactured by Tokyo Ohka Co., Ltd. As a result, as shown in FIG. 20C, in the reflective electrode region of the glass substrate 61, several types of micro-protrusion portions 64a · and 64b 'having different heights are formed. The raised edges 64a 'and 64b have a top edge having a square shape. The pattern holes 63a having a diameter of 5 micrometers and the pattern holes 63b having a diameter of 3 micrometers each form a raised portion 64a having a height of 2.48 micrometers, and a raised portion 64b having a height of 1.64 micrometers *. I-38- This paper is suitable for China National Standard (CNS) A4 size (2K) X 297mm ^ ~ ----- A7 B7 V. Description of the invention (36 Weilong convex part 64a, 64b, height It can be changed by changing the pattern holes and 63b / exposure time and development time. The size of the pattern holes 63a and 63b is not limited to the foregoing. Thereafter, as shown in FIG. The glass substrate 61 is heated at about 20 ° C. for one hour. This softens the square top edges of the raised portions 64 a and 64 b to form raised portions 64 a and 64 b having a substantially circular cross section. As shown in FIG. 19E, A polymer resin is applied to the formed glass substrate 61 by a spin coating method, and a wiring pattern is formed to form a polymer resin film 65. The aforementioned material OFPR-800 is used as the polymer resin, preferably about 1,000 to Spin coating is performed at a rotation speed in a range of about 3,000 revolutions per minute. In this embodiment, the spin coating is performed at a rotation speed of 2000 revolutions per minute. According to this method, a glass substrate 61 having The polymer resin film 65 on the upper surface of the continuous shape is a flat surface without raised portions. As shown in FIG. 19F, the reflective electrode 69 manufactured by A1 is formed on a predetermined portion of the polymer resin film 65 by, for example, sputtering. The materials suitable for the reflective electrode 69 are in addition to eight- and eight-alloys. Also included are Ni, Cr, and Ag with high reflection efficiency. The thickness of the reflective electrode 69 is preferably in the range of about 0.001 to about 1.0 micron. A polarizing plate (not shown) is added to this embodiment. On the back surface of the manufactured active array substrate. The backlight is placed on the outer surface of the polarizing plate. If the A1 film is formed after removing the portion of the polymer resin film 65 on the transmissive electrode 68, electricity is generated. Therefore, the part of the polymer resin film 65 on the transmissive electrode 68 should be formed after the reflective electrode 6 9 is formed. -39- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297). 509809 A7 ^ ___________ B7 __ V. Description of the invention (37). This removal: it can be performed by ashing while removing the polymer resin film 65. The electrodes located on the edge of the active array substrate 70 are connected to the driver The above part. This improvement process Efficiency, and a voltage can be effectively applied to the liquid crystal layer. If the polymer resin film 6 5 is not used in the method for forming the raised portion, the transmissive electrode 68 made of indium tin oxide and the transmissive electrode 6 made of A1 can be used. A layer such as Mo is formed between the produced reflective electrodes 69 to prevent electric corrosion. The formed reflective electrode 69 is made of a material with high reflection efficiency and has a continuous wave upper surface because the bottom polymer resin film 65 As described above, it has a 'continuous wave type.' In this embodiment, the transmission electrodes 68 are formed when the source bus bars 74 are formed. When the source bus bar 74 is a single-layer structure including the metal layer 81 instead of the aforementioned double-layer structure including the metal layer 81 and the indium tin oxide layer 80, the transmissive electrode 68 can communicate with the source electrode. The bus bars 7 4 are formed individually. The wavelength dependence of light reflected from a reflective electrode 69 having a continuous wave pattern and made of a material with high reflection efficiency is measured in the manner shown in FIG. 22. The structure for measuring is formed by simulating the conditions of a reflective electrode 69 which is equivalent to an actual liquid crystal display device during actual use. In detail, the simulated glass 6 6 having a refractive index of 1.5 is substantially equal to the refractive index of the actual liquid crystal layer. It is attached to the active array substrate 70, and a UV curable adhesive 6 with a refractive index of 15 is used on the upper layer. A reflective electrode 69 and a transmissive electrode 67 are formed. As far as the measurement system is concerned, the light source L 1 is placed so that the incident light l 1 is incident at an incident angle 0 i with respect to the simulated glass 6 6 normal line 1 and the photomultiplier L 2 is placed so as to capture relative to the normal line m 2 Fixed angle light beams reflected at output angle 0 °. -40- --- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 B7 V. Description of the invention O8) Using the aforementioned structure, the photomultiplier L 2 captures the scattered light beam L 2 As the incident light east L1 ′, it is a person reflected at the output angle θ among the scattered light incident on the simulated glass 66 at the incident angle 01. The aforementioned measurement was performed under the conditions of 1 = 30 ° and 0 ° = 20 ° to prevent the photomultiplier L 2 from capturing the normal reflected beam emitted from the light source L 1 and reflected from the surface of the simulated broken glass 66. . FIG. 24 is a diagram showing the wavelength dependence of the reflected light in this embodiment. As shown in FIG. 24, the reflected wavelength dependency is difficult to recognize in this embodiment, and it is proved that a good white display is obtained. In this embodiment, the shape of the patterned holes 63a and 63b of the photomask 63 is circular. Other shapes such as rectangular, oval, and bar shapes can also be used. In this embodiment, raised portions 64a and 64b having different heights are formed. Or it is also possible to form a convex portion having a single south degree or having three or more different heights to obtain a reflective electrode having good reflection characteristics. However, it was found that when bumps having two or more different heights are formed instead of bumps having a single height, a reflective electrode having better wavelength dependence of reflection characteristics can be obtained. If it is determined that only the raised portions 64a and 64b can be used to obtain the above table w 'having a continuous wave pattern, the polymer resin film 65 need not be formed. Only the resin film 6 2 (see FIGS. 20B and 20C) is formed to obtain an upper surface having a continuous wave shape, and a reflective electrode 69 is formed on the upper layer. In this case, the step of forming the polymer resin film 65 can be omitted. In this example, OF PR-8 00 manufactured by Tokyo Ohka Co., Ltd. was used as the photosensitive resin material. You can also use the exposure method -41-This paper size is suitable for financial standards (CNS) A4 specifications (no X 2 of the public 509809 A7 ^ _______ B7 V. Description of the invention (column) Clothing for wiring, any other pattern Positive or negative photosensitive resin material. Examples of the photosensitive resin material include: 〇 MR-8 3, 〇 MR · 8 5, 〇 NN R- 2 0 manufactured by Ud , O FP 2, OFPR-8 3 0 and OFPR-5 00; 14000-27 manufactured by Shipley Co .; ph04neath manufactured by Toray Industnes, lnc .;

Rw-101 manufactured by Seklsui Flne Chenncal Co., Ltd. & r101 & R6 3 3 manufactured by & Nlppon Kayaku K.K. In this embodiment, a thin film transistor 7 is used as the switching element. The invention can also be applied to active array substrates using other switching elements such as metal insulator metal (M 丨 M), diodes, and varistor. Therefore, as described above, in the liquid crystal display device and the method for manufacturing a liquid crystal display TF device of Example 8, a heart-shaped reflective electrode made of a material having high reflection efficiency is formed so as to have a continuous wave pattern. The wavelength dependence of the reduced reflectivity is ^^, and a good white display is obtained by reflection without causing interference colors. Since the ridges and convexes are formed on the substrate by an optical technique using a photomask, good reproducibility can be confirmed. The wavy upper surface formed by the reflective electrode can also be obtained with good reproducibility. A transmission electrode made of a material having a high light transmittance is formed at the same time as the source bus line is formed. A transmissive electrode of a reflective / transmissive liquid crystal display device can be formed without increasing the number of steps compared to a conventional liquid crystal display device. By forming a continuous wave pattern for the reflective electrode, light can be used more efficiently than expected in actual mirror holes. According to the liquid crystal display device of this embodiment, a reflective portion made of a high reflection efficiency material and a high light transmission efficiency material are formed in a display pixel. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2U) x 29? ^^ -42- 509809 A7 B7 V. Description of the invention (40) Transmission part manufactured. With this structure, when the environment is dark, the device functions as a transmissive liquid crystal display device, and uses light from the backlight to penetrate the transmissive area to display an image. When the environment is relatively dark, the device is used as a reflective / transmissive liquid crystal display device, which simultaneously uses the light from the backlight to penetrate the transmissive area and the light reflected from the reflective area including a film with a relatively high reflectivity. Display the image. When the environment is bright, the device functions as a reflective liquid crystal display device that uses light reflected from a reflective area including a film having a relatively high reflectivity to display an image. In other words, according to this embodiment, the pixel electrode of each pixel includes a reflection region made of a material with high reflection efficiency and a transmission region made of a material with high light transmission efficiency. Therefore, a liquid crystal display device having good light utilization efficiency and superior productivity in any of the foregoing cases is obtained. In this embodiment, the upper surface of the reflective region made of a reflective material has a continuous wave pattern. It prevents the specular phenomenon from being generated under the astigmatism device which is not necessary when the reflection area is flat, and the paper white display is obtained. In this embodiment, a photosensitive polymer resin film having a plurality of raised and convex portions is located under a reflective region made of a reflective material. With this structure, even if there is a change in the continuous smooth concave portion and the convex portion, the display is not affected. Therefore, the liquid crystal display device can be manufactured with good productivity. The transmissive region made of a high-transmission, high-efficiency material is formed at the same time as the source bus line is formed. This greatly shortens the manufacturing process of the liquid crystal display device. A protective film is formed between the transmission region and the reflection region. This prevents electrical contact between the transmissive and reflective areas. The reflective material remaining on the transmissive area and the terminal electrode is the reflection -43- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 509809 A7 ____B7 V. Description of the invention (41) The ~ ^ area is also removed when making a wiring pattern. This greatly shortens the manufacturing process of the liquid crystal display device. In this embodiment, the light emitted from the back light passes through the transmission area and leaves the child substrate, and is reflected back to the back light from the back surface of the reflection area, and then reflected to the child substrate. A portion of the re-reflected light passes through the transmission area and leaves the substrate. Because reflection generally occurs when the reflection area is flat, it has traditionally been difficult for far-re-reflected light to effectively pass through the transmission area. However, in this embodiment, 'because the reflection region has a continuous wave type, the light emitted from the backlight is scattered', so that the reflected light is effectively returned to the fraction of the backlight which is located below the transmission region. Therefore, unlike conventional transmissive liquid crystal display devices, light can be used more efficiently than an actual mirror hole than expected. (Embodiment 9) Fig. 25 is a partial cross-sectional view of a transmissive / reflective liquid crystal display device-100 according to Embodiment 9 of the present invention. 25, the liquid crystal display device includes an active array substrate 70 (corresponding to F, -F, cross-section), a counter substrate (color filter substrate) 160, and a liquid crystal layer interposed therebetween as shown in FIG. 18. 1 4 0. The transmissive / reflective active array substrate 70 includes a plurality of gate bus lines 72 as scan lines and a plurality of source bus lines 74 as signal lines, which are located on an insulating glass substrate 61. And each other. In each rectangular area surrounded by the adjacent gate bus lines 72 and the adjacent source bus lines 74, a transmissive electrode 68 made of a material with high light transmission efficiency and a material made of a material with high reflection efficiency are placed.之 Reflective electrode 69. The transmissive electrode 68 and the reflective electrode 69 constitute a pixel electrode. The pair of substrates (color filter substrates) 160 includes a filter formed on the insulating glass substrate 16 2 in order. -44- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) '& quot 509809 A7 ____ B7 V. Description of the invention (42) Color device layers 丨 6, 4 and transparent electrodes 66 made of indium tin oxide, etc .; A vertical alignment film (not shown) is formed on the surfaces of the substrates 70 and 60 facing the liquid crystal layer 14. In order to define the alignment of the liquid crystal molecules oriented by the electric field, the vertical alignment film is rubbed in one direction to provide a pre-elevation angle on the liquid crystal molecules. The liquid crystal layer 1 40 uses a nematic liquid crystal material having a negative dielectric anisotropy (for example,

Made by Merck &amp; Co., Inc.] viJ). Each pixel of the smallest display unit of the liquid crystal display device 100 includes a reflective region 120R defined by a reflective electrode 69 and a transmissive region 120T defined by a transmissive electrode 68. The thickness of the liquid crystal layer 140 is dr in the reflection area 120R and dt in the transmission area 120T (dt = 2d0), which is used for the light path of the display beam (the reflected light beam in the reflection area and in the transmission area) The transmitted light beams) are actually equal to each other. Although dr == 2 dt is better, but dt and dr can be appropriately determined according to the display characteristics. The prerequisite is dt &gt; dr. Dr-generally about 4 to About 6 micrometers, and dr is about 2 to about 3 micrometers. In other words, a step of about 2 to about 3 micrometers is formed in each pixel region of the active array substrate 70. When the reflective electrode 69 has the structure shown in FIG. 25 In the case of concave and convex surfaces, the average thickness should be dr. In this case, the transmissive / reflective liquid crystal display device 100 includes two types of regions (reflective region and transmissive region), where the thickness of the liquid crystal layer 14 is different from each other In this embodiment, the active array substrate 70 includes a reflective region 12 R and a transmissive region 12 T, which are different in height from the side facing the liquid crystal layer 140. The actual manufacturing has the structure shown in FIG. 25. The structure of the liquid crystal display device (diagonal line: 8.4 inches), 6 4 gray scale display Evaluate the display characteristics (transmittance and reflectivity) of the device. The evaluation results are shown in Figure 26. The liquid crystal display device -45-This paper size is applicable to China National Winter Standard (CNS) A4 (210 X 297) ) 509809 A7 B7 5. The invention is described in the following clauses. It is manufactured under the following conditions. The ratio of the 120T area of the transmission area to the reflection £ 1 2 R in a pixel is 4 · 6. The transmission electrode 6 8 is made of steel tin oxide. The reflective electrode is made of A1. The thickness dt of the liquid crystal layer 1 40 in the transmissive region 12 0 T is set to about 5.5 micrometers, and the thickness of the liquid crystal layer 1 40 in the reflective region 120R is The setting is about 3 microns. The transmittance of the liquid crystal display device in the transmission mode using light from the back light is measured using MB-5 manufactured by T 〇pc 〇n C 〇., And the liquid crystal display device is in the reflection mode The reflectivity using ambient light is measured using an integrating sphere using LCD-5 000 manufactured by Otsuka Electronics Co., Ltd. As shown in Fig. 26, the reflectance and transmittance in a gray scale display of 64 The changes (individual solid and dashed lines in Figures 2 and 6) substantially coincide with each other Therefore, even if the transmission mode display using the light from the backlight and the reflection mode display using the ambient light are used at the same time, a gray scale display with sufficient display quality can still be obtained. The contrast between the transmission mode and the reflection mode Individuals are about 200 and about 25. The evaluation results of color reproducibility will be described below. Figures 2 7 and 28 are conventional transmission type liquid crystal display devices and the transmissive / reflective type liquid crystal display devices of this embodiment at different brightness. Chromaticity map under ambient light. These liquid crystal display devices all use the same backlight. As shown in Fig. 27, when the illuminance of the ambient light on the display screen increases from 0 1 X to 8,000 lx and to 17,000 lx, the color reproducibility range of the conventional liquid crystal display device (the triangular area in Fig. 27) is greatly reduced. Observers can notice blurred colors. However, in transmissive / reflective liquid crystal display devices, such as -46- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) A7 _______B7 V. Description of the invention (44) tf 'in Figure 28, The color reproducibility of illuminance of 8,000,000 is substantially the same as that of illuminance of 0.1 lx. Moreover, when the illuminance is 丨 7, _ ΐχ, the color reproducibility is only slightly reduced. Therefore, there is almost no color blur. In conventional transmissive liquid crystal display devices, the contrast is reduced because of the reflection of ambient light from the surface of the display panel and the reflection of light from the black mask, contacts, etc. I used to block light. In contrast, in the transmissive / reflective liquid crystal display device of this embodiment, ambient light is provided in addition to the transmission mode display (reflection mode display, so the reflection mode display can be suppressed in the transmission mode display because the ambient light is reflected. The resulting contrast is reduced. Therefore, no matter how bright the ambient light becomes: ¾ 'The contrast obtained by the liquid crystal display device of this embodiment is not lower than that obtained by using only a reflection mode display. As a result, the transmissive type in this embodiment In the reflection type liquid crystal display device, the color reproducibility is not reduced even under bright ambient light, so a display with high visibility can be obtained under any conditions. Fig. 2 shows another specific example of the structure of this embodiment. The reflective electrode region 160R includes a reflective layer (reflective plate) 169 and a part of the transmissive electrode 168. Unlike the structure shown in FIG. 25, the reflective electrode region i20R includes a reflective electrode 69 having reflective characteristics. The active array substrate The height of the reflective electrode region 160R can be controlled by adjusting the thickness of the reflective layer 169 and / or the insulating layer 170 on the reflective layer 169. Embodiment 10) FIG. 30 is a plan view of an active array substrate of a liquid crystal display device according to Embodiment 10 of the present invention. FIG. 31 is a cross-sectional view taken along line GG of FIG. 30. Referring to FIGS. 30 and 31, On the transparent insulating substrate made of glass or plastic-47- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 509809 A7 B7 V. Description of the invention (45) '-2 〇1 The gate line 202 and a plurality of source lines 203 cross each other. Each area surrounded by the adjacent gate line 200 and the adjacent source line 203 is a pixel. The thin film transistor 204 is located near the cross points of the gate line 202 and the source line 2 03. The drain electrode 2 0 5 of each thin film transistor 204 is connected to the corresponding pixel electrode 206. For each pixel The portion forming the pixel electrode 206 includes two regions viewed from the top, that is, a region τ having a high transmission efficiency and a region having the same reflection efficiency. In this embodiment, the indium tin oxide layer 207 forms the top layer of the region T as a top layer. A layer with high transmission efficiency, and the layer A8 (or μ alloy layer) constitutes the top layer of the region R for high reflection The layer 207 and 208 constitute the pixel electrode 206 of each pixel. The pixel electrode 206 passes through the gate insulating film 209 and the gate line of the adjacent pixel in the subsequent pixel row. 2 〇2 &amp; Heavy. During the driving period, a storage capacitor for driving the liquid crystal is formed on the overlapped portion. The thin film transistor 2 0 4 sequentially includes a gate line corresponding to the source / drain 2 0 2 (In this case, it is 002a.) The branched gate 2 10, the gate insulating film 209, the semiconductor layer 212, the channel protection layer 213, and the n + -Si layer 211 are branched. Although not explicitly stated, the formed active array substrate has an alignment film which is connected to a counter substrate having a transparent electrode and an upper layer having an alignment film. The liquid crystal is injected into the space between the two sealed substrates, and the back light is placed on the side of the formed structure to complete the liquid crystal display device of this embodiment. A mixture of a guest-host liquid crystal material zLI23 27 (Merck & C.o., Inc.) manufactured by Merck &amp; Co., Inc. containing a black pigment and 0.5% optically active substance S-8 1 1 (manufactured by Merck & Co., Inc.) is used. As a liquid crystal. You can also use the electronically controlled birefringence (ECB) mode as the liquid crystal mode, and place the polarizer on top of the liquid crystal layer. -48- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 509809 A7 ____B7 5. Description of the invention (46) Front and bottom: top. When color display is required, a color filter (called a CF layer) including red, green and blue color layers is placed on top of the liquid crystal layer. The method of manufacturing the active array substrate in this embodiment will be described below. First, a gate line 2 02 and a gate 210 made of τ a are formed on the base substrate 201, and a gate insulating film 209 is formed on the integrally formed substrate. Thereafter, a semiconductor layer 212 and a channel protection layer 213 are formed on each of the gate electrodes 210, and then an η + -S i layer is formed as a source electrode 211 and a drain electrode 205 (or 211). By &gt; injecting and making a wiring pattern, an indium tin oxide layer 203a (bottom layer) and a metal layer 203b (top layer) are sequentially formed to form a source line 203. In this embodiment, Ti is used as the metal layer 203b. The advantage of the double-layered structure of the source line 2 0 3 is that even if the source layer 2 0 3 to the metal layer 203 b is partially defective, the gasified marriage tin layer 2 0 3 a can maintain the-source line 2 0 3 electrical connection, and reduce the possibility of the source line 203 disconnection. The copper oxide layer 207 having a high light transmission efficiency in the T region is formed of the same material in the same step as the indium tin oxide layer 203a forming the source line 203. The R region with high reflection efficiency is sequentially formed by forming a wiring pattern and forming a Mo layer 214 and an A1 layer 208. The A1 layer 208 can provide a sufficiently stable reflection efficiency (about 90%) at a thickness of about 150 nm or more. In this embodiment, the thickness of the a 1 layer 208 is 150 nm ′ to effectively reflect ambient light. A g, T a, W, etc. can also be used instead of A1 and A1 alloys for highly reflective layers (A1 layer 208). In this embodiment, the indium tin oxide layer 207 and the A1 layer 208 are used as the pixel electrode 206 in each pixel. Or can form A1 or A1 alloy layer with different thickness-49- This paper size is applicable to Chinese National Standard (CNS) A4 specification (21〇297 &amp; |) 509809 A7 ____B7 V. Description of the invention (47) to individually define the height Regions of light transmission efficiency and regions of high reflection efficiency are used as the regions T and R. This makes the manufacturing method simpler than the method using different materials. Moreover, the high reflection efficiency layer (the A 丨 layer in this embodiment) of the R region can be made of the same material as the metal layer 203b used for the source line 203. The method of manufacturing a conventional transmission-type liquid crystal display device is allowed to be used to manufacture the liquid crystal display device of this embodiment. As described above, each pixel electrode 206 includes a high transmission efficiency region τ and a high transmission efficiency region R. With this structure, it is possible to obtain a liquid crystal display device which, in comparison with a conventional liquid crystal display device using a transflective reflective film, can more effectively use ambient light and irradiated light for transmission / reflection mode display. On the entire area of each pixel and adjacent pixel gate lines 2 0 2 a located in the subsequent pixel rows, indium oxide is formed as the pixel electrode 206 through the gate insulating film 2 09 sandwiched therebetween.锡 层 207。 Tin layer 207. An A1 layer 208 is formed on the oxidized tin layer 207 via the Mo layer -214 sandwiched therebetween to form a region R in the central portion of the island-like pixel. According to this method, since the indium tin oxide layer 207 and the A1 layer 208 are electrically connected to each other, the regions τ and r apply the same voltage received from the same thin film transistor 204 to the liquid crystal. Therefore, a conversion line is prevented from being generated due to a change in alignment of liquid crystal molecules in a single pixel during a voltage application. The interposition of the Mo layer 214 between the indium tin oxide layer 207 and the A1 layer 208 can prevent the indium tin oxide layer 207 and the A 1 layer from contacting with each other through the electrolytic solution during the manufacturing process, thereby generating an electrical name. In this example, a good display characteristic is achieved by setting the ratio of the area of the T area to the area of the R area to 60.40. The area ratio is not limited to this value, but -50-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 _____B7 V. Description of the invention (48) According to the transmission of the T and R areas / The reflection efficiency and the use of the device are appropriately changed. In this embodiment, the area of the R region is preferably about 10 to about 90% of the effective pixel area (that is, the sum of the area of the T region and the area of the R region). If the percentage is less than about 10%, that is, the area where the transmission efficiency accounts for a large portion of the pixel, a problem arises in the conventional transmission type liquid crystal display device, that is, when the environment becomes too bright, the display is blurred. . Conversely, if the percentage of the r-region exceeds about 90% ', a problem arises when the ambient light is too low to view the display using only ambient light. That is, even if the backlight is connected after the situation sinks, the occupancy rate of the T area is still low as a display formed by the method of identification. In particular, when a remote liquid crystal display device is applied to a device mainly used outdoors, battery life is an important factor, and the device should be designed to make full use of ambient light to reduce energy consumption. Therefore, the area of the R region with high reflection efficiency is preferably about 40 to about 90% of the effective pixel area. When the area occupancy of the R area is about 40%, the environment which is sufficient for display only using the reflection mode display is limited, and the time required for the light from the backlight becomes longer. This reduces the battery life. On the other hand, when the liquid crystal display device is applied to a device mainly used outdoors, the device should be designed to effectively utilize light from the backlight. Therefore, the area of the R region is preferably about 60% of the effective pixel area on the side. When the area occupancy of the R region exceeds 60%, the T region used to penetrate the light from the backlight becomes too small. In order to compensate for this phenomenon, the brightness of the backlight must be substantially increased compared to, for example, a transmissive liquid crystal display device. This increases energy consumption and reduces the efficiency of subsequent light utilization by the device. -51-This paper size is in accordance with China National Standard (CNS) A4 specification (21〇X 297 public love) 509809 A7 ---- B7 V. Description of the invention (49) The liquid crystal display device in this case is actually installed in the battery Driven camera. As a result, by adjusting the brightness of the backlight, the display remains bright and recognizable regardless of the brightness of the ambient light. In particular, when the device is used outdoors in good weather, there is no need to turn on the backlight, so energy consumption is reduced. Therefore, compared with a device using only a transmissive liquid crystal display device, the battery usage time is significantly increased. (Embodiment 11) Fig. 32 is a plan view of part S of an active matrix substrate of a liquid crystal display device according to Embodiment 11 of the present invention. Fig. 33 is a cross-sectional view taken along the line H-H of Fig. 32. In this embodiment, the portion of each pixel that is to be formed into a pixel electrode is divided into two portions at its center when viewed from above, namely, a τ region with high transmission efficiency and an R region with high reflection efficiency. Identical components are indicated by the same reference numerals as those used in Figures 30 and 31 of Embodiment 10. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Embodiment 10. Referring to FIGS. 3 2 and 3 3, an indium tin oxide layer 207 is formed in the area of each pixel from the center portion to the corresponding gate line 2 0 2 (and is connected to the drain electrode 2 of the thin film transistor 204 in part). 0 5. The high reflection efficiency A1 layer 208 overlaps the indium tin oxide layer 207 via the Mo layer 214 located at the center of the pixel. The A 1 layer 2 0 8 is opposite to the area between the pixel and the indium tin oxide layer 207. The extension “on the side surface” overlaps with a gate line 2 0 2 a located in a subsequent pixel row for adjacent pixels via a gate insulating film 209. Because the indium tin oxide layer 207 and the A 1 layer pass through The Μ layer 2 1 4 is electrically connected, so it suppresses the electric corrosion caused by the contact between the indium tin oxide layer 207 and the A 1 layer 208. -52- This paper standard applies to China National Standard (CNS) A4 specifications ( 210X 297 mm) A "509809 A7 _ B7 V. Description of the invention (50) A1 layer 20 8 That is the weight between the R region and the gate line 202a and the adjacent pixel # is through the insulating film 2 0 9 Achieved. This overlap forms the storage capacitor cry during the driving of the liquid crystal, and the overlapping portion of the R region is also used for display. This makes the effective area of the pixels significantly larger than the conventional structure. In order to further increase the pixel aperture ratio of the pixel, a high reflection efficiency film such as a 1 layer 2 0 8 'can be formed on the thin film transistor 204 or the source line 2 0 3 through the insulating film as the pixel electrode 2 0 Part of 6 (which is electrically connected to the electrode 205). However, in this case, the thickness of the insulating film, the material, and the pattern design should be appropriately determined so that the image quality depends on the pixel electrode 2 〇 The reduction in the parasitic capacitance generated between 6 and the source line 2 03 is minimized. (Embodiment 12) Fig. 04 is a part of an active array substrate of a liquid crystal display tf device according to Embodiment 12 of the present invention. A plan view. Fig. 35 is a cross-sectional view taken along line I-I in Fig. 34. This embodiment is different from Embodiment 11 in that a common is formed under a region R with a high reflection efficiency through a gate insulating film 2 09. Line 215. In FIGS. 30 to 33 of Embodiments 10 and 11, the same components are denoted by the same reference numerals. The manufacturing method of the pixel, the thin film transistor structure, and the device is substantially the same as that of Embodiments 10 and 1. The description is the same as 1. With reference to Figs. 3 4 and 35, the indium tin oxide layer 207 is at each pixel position. Corresponding to the gate line 202, it is formed from the center part to the edge part, and is connected to the drain electrode 205 of the thin film transistor 204. The high reflection efficiency A1 layer 208 and the indium tin oxide pass through the -M 0 layer located at the center of the pixel The layer 207 overlaps. The A1 layer 208 extends on the side of the pixel opposite to the area of the indium tin oxide layer 207, and passes through the gate insulating film 209 and the common line located in the subsequent pixel row for adjacent pixels. 2 1 5x-53- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (21〇χ 297 mm) 51 5. Description of the invention (璺). : Since the m indium tin oxide layer 207 and the A 1 layer are electrically connected via the mol layer 2 1 4 ′, the electric corrosion caused by the contact between the indium tin oxide layer 207 and the A 丨 layer 208 is suppressed. The A 1 layer 208, that is, the R region and the common line 2 and 5 are overlapped via the insulating film 209, and a storage capacitor is formed during the driving of the liquid crystal, thereby improving the display. Such storage capacitors are formed without reducing the mirror-to-hole ratio. In order to further increase the pixel-to-hole ratio of the pixel, a high reflection efficiency film such as eight layers of two layers can be formed on the thin film transistor 204 or the source line 203 via an insulating film as a part of the pixel electrode 206 (the system Electrically connected to the drain (205). However, in this case, the thickness and material of the insulating film should be appropriately deducted so that no parasitic capacitance is generated between the &lt; &gt; Bein pixel electrode 206 and the thin film transistor 204 or the source line 203. For example, after the indium tin oxide layer is formed, an organic insulating film with a dielectric constant of about 36 is formed on the entire surface of the I substrate to a thickness of about 3 microns. After that, a layer can be formed in each pixel to overlap the thin film transistor 204 or the source line 203, and electrically connected to the drain electrode 205. Such a% connection can be made by the drain electrode A contact hole is formed in the 0.05 or steel oxide tin layer ⑼7 and is achieved through the contact hole. In this embodiment, the portion of each pixel that is to form the pixel electrode 206 is divided into two regions, namely, a region with a high light transmission efficiency (D region) and a region with a high reflection efficiency (R region). The child part can be divided into three or more areas. For example, as shown in Fig.%, The pixel electrode 206 can be divided into three regions', namely, a T region with high transmission efficiency, a C region with high reflection efficiency, and a C region with different transmission or reflection efficiency from the other two regions. (Embodiment 1 3) • 54- ________ B7 _ V. Description of the Invention (52) FIG. 7 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 13 of the present invention. FIGS. 38A to 38D are cross-sectional views taken along line J-J of FIG. 37, and illustrate a method for manufacturing the liquid crystal display device of this embodiment. In this embodiment, the r region with high reflection efficiency is made of the same material as the source line. In FIGS. 30 to 36 in Examples 10 to 12, the same components are denoted by the same numbers. The pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Embodiments 10 to 12, unless otherwise stated. In this embodiment, each pixel includes a high transmission efficiency D region located at a center portion thereof and an R region surrounding the T region. The outer contour of the R region is a square shape following the two gate lines and the two source lines. The R region includes a layer with high reflection efficiency, and is made of the same material as the source line to obtain high reflection efficiency. A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 38A to 38D. Referring to FIG. 38A, gate lines 2 02 (refer to FIG. 37), gate 2 1 0, gate insulating film 2 09, semiconductor layer 212, and the like are sequentially deposited on the insulating substrate 2 0 1 by sputtering. The channel protection layer 213 and the n + -Si layer 211 to be used as the source 211 and the drain 205 (or 211). After that, a conductive film 2 41 for the source line 2 03 (see FIG. 37) is deposited on the formed substrate by sputtering. Referring to FIG. 3B, the conductive film 241 is patterned to form a layer 242, a drain-pixel connection layer 243, and a source line 203 with high reflection efficiency. The high reflection efficiency region of this layer 2 4 2 corresponds to the R region. Referring to FIG. 3C, an interlayer insulating film 2 4 4 is formed on the formed substrate, and then a contact hole 2 4 5 is formed through the interlayer insulating film 2 4.4. 3D, a high transmission efficiency layer 246 made of indium tin oxide is formed on the entire area of each pixel. The high transmission efficiency layer 246 can be made of any of its -55- this paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 male yellow) A7 B7 V. Description of the invention (53 Other high transmission: efficient materials. The high The transmission efficiency layer 2 4 6 is connected to the connection layer 2 4 3 through the contact hole 2 4 5 penetrating the interlayer insulating film 2 4 4 and is electrically connected to the corresponding drain electrode 205. The high transmission efficiency layer 246 is also provided as The voltage is applied to the pixel electrode of the liquid crystal layer, so that the voltage is provided to the portions of the liquid crystal layer corresponding to the T and R regions through the high transmission efficiency layer 2 4 6. Therefore, in this embodiment, each pixel electrode system includes only high transmission The efficiency layer 2 4 6 does not include the T region with high transmission efficiency and the r region with high reflection efficiency. The advantage of this structure over the transmissive liquid crystal display device is that the pixel electrode can be formed without increasing the number of program steps. When the failure is minimized, a high reflection efficiency region is formed. (Embodiment 1 4) Fig. 39 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 4 of the present invention. Figs. 40A to 40D are A cross-sectional view taken along the κ-κ line in FIG. 39, The method for manufacturing the liquid crystal display device of this embodiment will be described. In this embodiment, the R region with high reflection efficiency (the shaded portion in FIG. 39) is made of the same material as that used for the gate line. Examples 丨 0 to 丨In the drawings J 0 to 3 in 3, the same components are denoted by the same numbers. Unless otherwise stated, the manufacturing method of the pixels, the thin film transistor structure, and the device is substantially the same as that described in Embodiments 10 to 13 In the second embodiment, when viewed from the top, each pixel includes a T region located at its center and having high transmission efficiency, and an outer contour surrounding the region which substantially includes two connecting stripes <r region m is attached to two gates The epipolar line and the two source lines of the multi-degree ° n region include a high reflection efficiency layer made of the same material as the gate 得到 to obtain high reflection efficiency. Now, a method of manufacturing the liquid crystal display device will be described with reference to FIGS. 40A to _. -

509809 A7 B7 V. Description of the invention (54 refer to FIG. 4 OA, a conductive film is formed on the insulating substrate 201. The conductive film is then patterned to form a gate electrode 2 1 0, a gate line 2 0 2 (see (Figure 3 9), and the high reflection efficiency layer 2 4 2. The high reflection efficiency layer 2 4 2 corresponds to the R region. Referring to FIG. 4 B, a gate insulating film 209 is sequentially deposited on the formed substrate by sputtering. The semiconductor layer 212, the channel protection layer 213, and the n + -Si layer 211 which is to be the source electrode 211 and the drain electrode 205 (or 211). Thereafter, the metal layer 203b and the drain layer 203 which are part of the source layer 203 are formed in the same step. Electrode-pixel electrode connection layer 243. The connection layer 243 partially overlaps with the drain electrode 205 of the thin film transistor 204. Referring to FIG. 40C, indium tin oxide is deposited on the formed substrate by sputtering to produce a wiring pattern to A high transmission efficiency layer 246 and an indium tin oxide layer 203a as a part of the source line 203 are formed. A high transmission efficiency layer 246 is formed on the entire area of each pixel, and an indium tin oxide is formed on the metal layer 203b. The layer 203a has the same pattern as the metal layer 203b. The high transmission efficiency layer 246 and The connection layer 243 connected to each thin film transistor 204 is partially overlapped. Referring to FIG. 40D, a passivation film 247 is formed and a wiring pattern is formed. Therefore, 'each pixel of the liquid crystal display device of this embodiment includes a central portion and The T region with high transmission efficiency and the r region with high reflection efficiency surrounding the two connecting stripes of adjacent source lines are surrounding the T region. In this case, the indium tin oxide layer 203a of the source line 203 and the high reflection efficiency The efficiency material layer 242 is located at different heights, so the indium tin oxide layer 203a and the high reflection efficiency material layer 242 of each pixel need to prevent light leakage gaps to be reduced, so that the mirror hole of the pixel is formed in the opposite case. For T and R zones (ie, high reflection efficiency layer -57-) This paper size applies to China National Standard (CNS) A4 (21〇X 297cm ¢)

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(Located in the center of the pixel). In this embodiment, as in Embodiment 13, each pixel electrode includes only one electrode (ie, the high transmission efficiency layer 246). The advantage of this structure over the structure in which the pixel electrode 1 includes both types of electrodes is that the incidence of defects is reduced, and 0: the device has been manufactured. ‘Effective In this embodiment, each source line 203 has a double-layer structure including a metal layer 203 b and an indium tin oxide layer 203 a. Even if the metal layer is partially defective, the source line 2 0 3 is still electrically connected by the indium tin oxide layer 203a. The possibility of disconnection of the source line 203 is reduced. (Embodiment 15) Fig. 41 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 5 of the present invention. 4 2 A to 4 2 C are cross-sectional views taken along line L-L of FIG. 41 and illustrate a method of manufacturing the liquid crystal display device of this embodiment. In this embodiment, the pixel electrode is extended on the gate line and / or the source line via an insulating film to increase the effective pixel area (substantially the area of the pixel). The same components in Examples 10 to 14 are given the same reference numerals. Unless otherwise stated, the pixel, the thin film transistor structure, and the manufacturing method of the device are substantially the same as those described in Embodiments 10 to 14. As shown in FIG. 41, in this embodiment, when viewed from above, each pixel includes a high transmission efficiency T region located at the center portion thereof and a square R region formed by a strip surrounding the T region (FIG. 41 Middle slash area). The pixel electrode including the high transmission efficiency layer overlaps the adjacent gate line 202 and the source line 2 03 through the interlayer insulating film, and may be located on the gate line 202 and the source line 20 in the liquid crystal layer. A voltage is applied to the upper part. This confirms that the effective pixel area is larger than that of Examples 10 to 14. -58- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 509809 A7 ------ B7 V. Description of the invention (56) This embodiment: Chinese, gate line 2 〇 2 and source line 203 are in the R region as a high reflection efficiency layer. A method for manufacturing the liquid crystal display device will be described with reference to FIGS. 4A to 4C. Referring to FIG. 4A, gates 2 and 0, gate lines 2 and 2 (see FIG. 41), gate insulating film 2 and semiconductor layer 2 and channel protection layer 213 are sequentially formed by sputtering. And want to be the source 21 丨 and drain 205 (or 211) ^ —. At least any one of the gate line 202 and the source line 203-to be overlapped with the transmissive layer as a pixel electrode in the subsequent steps-is preferably made of a material with high reflection efficiency. Referring to FIG. 42B, an interlayer insulating film 244 is formed on the formed substrate, and contact holes 2 4 5 are formed to penetrate through the interlayer insulating film 2 4 4. Referring to FIG. 4C, a high transmission efficiency material such as indium tin oxide is deposited on the formed substrate by low-level irradiation, and a wiring pattern is formed to form a high transmission efficiency layer 2 4 6. The remote transmission efficiency layer 2 4 6 is connected to the connection layer 243 ′ through the contact holes 2 4 5 and is sequentially connected to the electrode 205 of the thin film transistor 204. In this case, the high transmission efficiency layer 246 is re-registered with at least any one of the gate line 202 and the source line 203 after a wiring pattern is made. With this structure, the gate line 2 02 and / or the source line 2 03 which overlaps the high transmission efficiency layer 2 4 6 through the interlayer insulating film 2 4 4 can be used as a high reflection efficiency layer. The display device having the foregoing structure should be designed so as not to cause capacitance due to the high transmission efficiency layer 2 4 6 and the gate line 202 or the source line 203, which may cause a phenomenon such as a pavilion, thereby reducing the image quality. Therefore, in this embodiment, each pixel includes a τ region with high transmission efficiency at its center and -59- corresponding to adjacent gate and / or source lines. (CNS) Α4 size (210 X 297 mm)

Description of the invention In position: R region with high reflection efficiency. This eliminates the need to form other high reflection efficiency layers and shortens the process. (Performance Example 16) FIG. 4 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 16 of the present invention. Figs. 44A to 44F are cross-sectional views taken along the line MM in Fig. 43 and illustrate a method of manufacturing the liquid crystal display device of this embodiment. As shown in FIG. 43, each pixel of the liquid crystal display device of this embodiment includes a high transmission efficiency T region located at the center thereof, and two stripes located on the side of the τ region and including adjacent source lines 2 0 3 The high reflection efficiency R region (the oblique part of Fig. 4 3). As shown in FIG. 44F, the R region includes any of high convex portions 253a and low convex portions 253b located on the insulating substrate 201, a polymer resin layer 254 located on these convex portions 253a and 253b, and High reflective efficiency layer 242 on the polymer resin layer ~ 254. The formed layer 242 constitutes the surface layer of the R region, and has a continuous wave surface, and is electrically connected to the drain electrode 205 through the contact hole 245 and a bottom electrode (not shown). A method of manufacturing the liquid crystal display device will be described with reference to FIGS. 4A to 4F. Referring to FIG. 4A, a plurality of gate lines 2 02 (refer to FIG. 4 3) are formed on the insulating substrate 2 01 and branched from the gate line 2 02 and manufactured from materials such as Cr, Ta, etc. Gate 2 1 0. A gate insulating film 209 made of a material such as SiNx, SiOx, etc. is formed on the insulating substrate 201 to cover the gate line 202 and the gate 2 10. A semiconductor layer 212 made of materials such as amorphous silicon (a-Si), polycrystalline silicon, and CdSe is formed on a portion of the gate insulating film 209 located on the gate 2 10. At -60- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 509809 A7 _ B7 V. Description of the invention (58) A channel protection layer 213 is formed on each semiconductor layer 212. A pair of contact layers 2 4 8 made of a-S 1 are formed on both sides of the channel protection layer and extend to the sides of the semiconductor layer 2 1 2. A source electrode 249 made of Ti 'Mo, A1 and other materials is formed on one contact layer 248, and a drain electrode 205 made of Ti, Mo, A1 and other materials is formed on the other contact layer 248. In this embodiment, a glass plate manufactured by Corning Inc. with the product number 7059 to the extent of 1 mm is used as the material of the insulating substrate 201. Referring to FIG. 4B, a conductive film is formed on the formed substrate by sputtering, and a wiring pattern is formed to form a metal layer 20 3b, which is also a part of the source line 203 and the bottom electrode 250. Each of the bottom layers 250 can partially cover a gate electrode 202 for use by an adjacent pixel in a subsequent pixel row through a gate insulating film 209 to form a storage capacitor therebetween. Each gate line 200 used to form a storage capacitor can overlap with a high reflection efficiency layer, or the reflection efficiency of the gate line 202 itself can be as high as a part of the pixel area (R area), and further increase the mirror Hole ratio. Referring to FIG. 4C, indium tin oxide is deposited on the formed substrate by sputtering, and a wiring pattern is formed to form an indium tin oxide layer 203a, which together with the metal layer 203b constitutes a source line 203. In this embodiment, each source line 2 03 has a double-layer structure including a metal layer 2 03 b and an indium tin oxide layer 2 3 a. The advantage of this two-layer structure is that even if the metal layer 203b is partially defective, the electrical connection of the source line 203 can be maintained by the indium tin oxide layer 203a. This reduces the possibility of the source line 203 being disconnected. Simultaneously with the formation of the indium tin oxide layer 2 0 3 a, it was also obtained by making a wiring pattern -61-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 male I) ------- B7 V. Description of the invention (59) The pixel electrode layer 246 has a high transmittance and radiation efficiency. At this time, a layer 2 having a high transmission efficiency as a pixel electrode can be formed simultaneously with the source electrode and the spring 2 0 j. 46 ° Referring to FIG. 44D, a resist film 25 2 made of a photosensitive resin can be formed and produced. The wiring pattern is then heat-treated to passivate it, and a high bulge portion 25ja and a low bulge portion 253b having a substantially circular cross section are formed on a portion of the formed substrate corresponding to the R region. It is preferable that the ridges 253a and 253b are not located on the south transmission efficiency layer 246, so that a voltage can be effectively applied to the liquid crystal layer. However, even if the convex and convex portions 253a and 253b are located on the layer 246, as long as the convex and convex portions are transparent, there is no significant optical influence. Referring to FIG. 44E, a polymer film 254 is formed on the raised portions 25 3 a &amp; 25 3 b. With this film, the concave and convex surfaces of the R region can be made more continuous by reducing the number of planar portions. This step can be omitted by changing the manufacturing conditions. Referring to FIG. 4F, a layer 242 fabricated by forming a high reflection efficiency on a predetermined portion of the polymer film 2 54 by, for example, sputtering is formed as a pixel electrode. In addition to A1 and A1 alloys, materials suitable for the high reflection efficiency layer 242 include Ta, Ni, Cr, and Ag with high reflection efficiency. The thickness of the high reflection efficiency layer 242 is preferably in the range of about 0.01 to about 1.0 microns. Therefore, each pixel of the liquid crystal display device of this embodiment includes a high transmission efficiency T region located at the center portion, and a high reflection efficiency R region dependent on the Zheng source line. -This structure is used because the indium tin oxide layer 203a and the high reflection efficiency layer 242 of the source line 203 are located at different heights and are opposite to the formation position of the T and R regions (that is, the 鬲 reflection efficiency layer is located in the pixel Central part) ratio -62- Applicable to China National Standard (CNS) A4 specifications (210 X 297 public funds) A7 — __________B7 V. Description of the invention (60) Compared with 'Indium tin oxide layer 2 0 3 a and high reflection efficiency layer 2 The gap between 2 and 2 which needs to prevent light leakage can be narrowed, and the pixel aperture ratio of pixels is increased. In this embodiment, the high reflection efficiency layer 2 4 2 has a smooth concave and convex surface, so that the reflected light is scattered in a wide alignment. When a scattering plate is used at the same time, it is not necessary to use the resist film 2 5 2 to form the raised portions, and the surface of the high reflection efficiency layer 242 can be flattened. In either case, the high reflection efficiency layer 2 4 2 and the high transmission efficiency layer 2 4 6 are individual layers with a third substance interposed therebetween (for example, resin and metal such as MO). With this structure, in the specific case where the high transmission efficiency layer is made of indium tin oxide and the high reflection efficiency layer is made of A1 or A1 alloy, the electric wiring that is likely to be generated in the A1 etching step by the μ wiring pattern can be reduced. Eroded and damaged. (Embodiment 17) FIG. 45 is a partial plan view of an active array substrate of a liquid crystal display device according to Embodiment 17 of the present invention. Fig. 46 is a sectional view taken along the line N-N in Fig. 45. Referring to FIGS. 4 5 and 46, the active array substrate includes pixel electrodes 2 06 having a matrix type, gate lines 2 0 2 for providing a scanning signal, and source lines 2 3 for providing a display signal. It crosses each other around the edge of the pixel electrode 206. The pixel electrode 206, the gate line 202, and the source line 203 overlap at this edge via an interlayer insulating film 244. The thin film transistor 204 is located at each intersection of the gate line 202 and the source line 203, as a vertical switch element for providing a display signal on the corresponding pixel electrode 2006. The gate 210 of the thin film transistor 204 is connected to the corresponding gate line 2 0 2 ′ to drive the thin film transistor 2 with a signal input to the gate 2 1 〇 4 -63- This paper standard applies to the Chinese national standard (CNS ) Α4 size (210 X 297 mm) 509809

. The source 2 4 9 of the thin film transistor 2 0 is connected to the corresponding source line 2 03 to receive a data signal. The drain 205 of the thin film transistor 204 is electrically connected to the connection electrode 255, and is connected to the pixel electrode 206 through a contact hole 245. The remote connection electrode 2 5 5 forms a storage capacitor through the gate insulating film 209 and the common line 2 1 5. The common line 215 includes a metal film and is connected to a counter electrode on the counter substrate 256 via an interconnector (not shown). The common line 215 can be formed in the same step as the gate electrode 202 to shorten the manufacturing process. Each pixel electrode 206 includes a high reflection efficiency layer 242 made of A1 or A1 alloy, and a high transmission efficiency layer 246 made of indium tin oxide. When viewed from above, the pixel electrode 206 is divided into three regions, that is, two regions with high transmission efficiency and one region with high reflection efficiency (corresponding to the oblique line portion in FIG. 45). The high reflection efficiency layer 2 4 2 may also include a high reflection efficiency conductive metal layer such as Ta as in the foregoing embodiment. Each R region is designed to cover a part of the light-shielding electrode and interconnection lines such as the gate line 202, the source line 203, the thin film transistor 204, and the common line 215, which does not allow the light from the backlight to transmit. With this structure, a portion of each pixel that cannot be used as the T region can be used as the high reflection efficiency R region. Increase the mirror hole ratio of the pixel portion. The τ region of each pixel portion is surrounded by the R region. A method of manufacturing an active array having the aforementioned structure is described. First, a gate electrode 2-10, a gate line 202, a common line 2 15, a gate insulating film 209, a semiconductor layer 212, a channel protection layer 213, and the like are sequentially formed on a transparent insulating substrate 201 made of a material such as glass. Source 249, and pole 205. After that, a transparent conductive film is deposited on the formed substrate by sputtering and the structure is to be formed. -64- This paper size applies Chinese National Standards (CNs) A4 specifications (210 X 297 mm) 509809 A7 ___ _ B7 V. Description of the invention (62 ) Metal films of the source lines 2 0: 3 and the connecting electrodes 2 5 5, and a wiring pattern is made into a predetermined shape. Therefore, the 'mother bar source lines 2 0 3 have a double-layered structure including an indium tin oxide layer 2 3 a and a metal layer 2 0 3 b. The advantage of the double-layer structure is that even if the metal layer is partially defective, the indium tin oxide layer 2 03 a can maintain the electrical connection of the source line 2 03. And reduce the possibility of disconnection of the source line 203. Thereafter, a photosensitive acrylic resin was applied to the formed substrate by a spin coating method to form an intermediate layer insulating film 2 4 4 having a thickness of about 3 m. The acrylic resin is then exposed according to the desired pattern and developed using an alkaline solution. Only the exposed portion of this film is etched by the alkali solution to form a contact hole that penetrates the interlayer insulating film 2 4 4. Using alkali development, perfect contact holes 2 4 5 were obtained. The use of a photosensitive acrylic resin for this interlayer insulating film 2 4 4 is advantageous in terms of the following factors. Because spin coating can be used to form a thin film, a film as thin as a few microns can be easily formed. In addition, the intermediate layer insulating film 2 4 4 does not require a photoresist application step when making a wiring pattern. In this embodiment, the acrylic resin is originally colored, and can be made transparent by exposing the entire surface after making a wiring pattern. This acrylic resin can also be made transparent by chemical processing. Thereafter, an indium tin oxide film is formed by sputtering and forming a wiring pattern, and is used as the high transmission efficiency layer 246 of the pixel electrode 206. Therefore, the transmission efficiency layer 2 4 6 constituting the pixel electrode 2 06 is electrically connected to the corresponding connection electrode 255 through the contact hole 2 4 5. The high transmission efficiency layer 242 made of A1 or A1 alloy is formed on the material layer 246 corresponding to the high transmission efficiency portion of the R region to cover the gate line 2 02 -65-This paper size applies Chinese national standards CNS) A4 size (210 X 297 mm) &quot;: &quot; 509809

The source line 203, the thin film transistor 204, and the common line 2i5. The two material layers μ] and 246 are electrically connected to each other to form a pixel electrode 206. Any adjacent pixel electrodes 206 are individually located above the gate line 202 and the source line, and are not electrically connected to each other. As shown in FIG. 46, the manufactured active array substrate is bonded to the substrate, and liquid crystal is injected into the space between the substrates to complete the liquid crystal display device of this embodiment. As described again, the liquid crystal display device of this embodiment includes a high reflection efficiency layer 242, which is located on the thin film transistor 204, the gate line 202, and the source line 20j to form a pixel electrode 206. The R area. This eliminates the necessity of providing a light-shielding film to prevent light from entering the thin film transistor 204, and to shield a portion of the pixel electrode 202 from the gate line 202, the source line 203, and the common line 215. In these sections, light leakage occurs in functional areas and in the form of transition lines in the easy-to-display areas. As a result, a region that cannot be used as a display region traditionally because it is shielded by a light-shielding film can be reused as a display region. This makes efficient use of the display area. When the gate line and the source line include a metal film, they shield the light from the backlight in a conventional transmissive liquid crystal display device, so they cannot be used as a display area. However, in this embodiment, the T region with high transmission efficiency is formed in the center of each pixel (this embodiment is two separate parts). The r region with high reflection efficiency is formed in a stripe shape surrounding the T region. That is, the r region with high reflection efficiency covers the gate line, the source line, the common line, and the switching element, and is used as a reflective electrode region of each pixel electrode. This structure makes the mirror holes of the pixel electrodes relatively opposite. The pattern pattern (that is, the pattern in which the T region soil surrounds the R region) is increased. -66-This paper size applies to China National Standard (CNS) A4 (210X297 mm)

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A7 _ B7 V. Description of the invention (64 ~ '—---- or the R region of each pixel can be formed as shown in Fig. 4 (slanted portion), including the connection electrode 2 5 5. This inhibits penetration of the T region Brightness of light. (Embodiment 18) In the foregoing embodiment, the present invention is applied to an active matrix type liquid crystal display device. The present invention can also be applied to a simple matrix type liquid crystal display device. A pair of faces facing each other will be described below The basic structure of the row electrode (signal electrode) and column electrode (scan electrode). In a simple matrix liquid crystal display device, the area where the pair of row electrode and column electrode cross each other is defined as a pixel. Figure 4 8 A to 4 8 C shows an example of the pixel region. Referring to FIG. 4A, a transmissive electrode region is formed in the central portion of the row electrode in a pixel region, and a reflective electrode region is formed in the remaining edge portion. The structure of the row electrode may be Same as Fig. 48B or 48C. The height of the reflective electrode area can be adjusted by forming an interlayer insulating film between the reflective electrode and the transmissive electrode, as shown in Fig. 4 8 C. Or as shown in Fig. 49A, the reflective electrode area Row electrode in a pixel area It is formed in the central part, and the transmissive electrode area is formed in the remaining edge parts. The structure of the row of electrodes is shown in Figure 4 9B or 4 9 C. The height of the reflective electrode area can be achieved by the reflective plate and the transmissive electrode. An intermediate layer insulating film is formed and adjusted as shown in Fig. 4 9 C. Or as shown in Figs. 50A, 50B, and 50C, the row electrode may have a strip-shaped reflective electrode region. The strip-shaped reflective electrode region may be arranged along the row electrode. Formed on one side, as shown in Figs. 5A to 50C, or along its center, as shown in Figs. 5A and 5B. _ The liquid crystal display device of the present invention is different from the conventional reflective type or Characteristics of transmissive liquid crystal display device. -67- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 509809 A7 B7 V. Description of the invention (65) In the conventional reflective liquid crystal display device, the display It uses ambient light to reduce energy consumption. Therefore, when the ambient light is below a certain limit value, the display cannot be recognized even if the device is used in an environment that can provide sufficient energy. This is the reflective type The biggest disadvantage of liquid crystal display devices. If the reflection characteristics of the reflective electrode are changed at the time of manufacture, the utilization efficiency of the ambient light of the reflective electrode is also changed. This changes the display to a critical value of the unrecognizable ambient light intensity according to the panel change. Therefore, at the time of manufacture, The change needs to be controlled more carefully than the conventional transmissive liquid crystal display device controlling the mirror aperture ratio. Otherwise, a liquid crystal display device with stable display characteristics cannot be obtained. Conversely, in the liquid crystal display device of the present invention, the conventional transmissive liquid crystal The display device can provide sufficient electric power to use the light from the backlight. Therefore, the display can be recognized regardless of the ambient light. Therefore, the change in the utilization efficiency of the ambient light due to the change in the -reflection characteristics does not need to be reflected. Type liquid crystal display device is strictly controlled. On the other hand, in a conventional transmissive liquid crystal display device, when ambient light becomes bright, the surface reflection component of light increases, making it difficult to recognize the display. In the liquid crystal display device of the present invention, the reflection region is used together with the transmission region. This increases panel brightness and improves visibility. Therefore, the liquid crystal display device of the present invention can simultaneously overcome the problem of reduced visibility due to surface reflection in conventional (transparent) liquid crystal display devices under high (ie, bright) ambient light, and low (ie, dark) in conventional reflective liquid crystal display devices. The problem of difficult to recognize the display due to the decrease of the panel brightness under ambient light. In addition to the foregoing, the characteristics of these devices can be obtained at the same time. -68- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) A7 B7 V. Description of the invention (66) As described above, according to the present invention, in comparison with the case of a transmissive reflective film '纟 Pixels all include regions with higher transmission efficiency and regions with higher reflection efficiency. In each region, a high transmission efficiency layer or a high reflection efficiency layer is used as the pixel electrode. This structure is different from the conventional liquid crystal display device using a semi-transmissive reflective film, and prevents the environment g from being irradiated due to, for example, the astigmatism phenomenon. The utilization efficiency of light is reduced. A good image can be displayed by using the reflection mode display, the transmission mode display, or both the reflection mode display and the transmission mode display 'regardless of the ambient light'. Because two kinds of light from backlight and ambient light can be effectively used for display at the same time, the energy consumption is much lower than a transmissive liquid crystal display device that always uses light from backlight. In other words, the present invention can overcome the shortcomings of the conventional reflective liquid crystal display device that greatly reduces the visibility under low ambient light and the conventional transmissive liquid crystal display device that is difficult to recognize the display under high ambient light by increasing light utilization efficiency. Since the area of the south reflection efficiency partially covers the gate line, the source line, and / or the switching element, the light incident on these portions can be used for display. Therefore, the effective area of pixels is greatly increased. This not only overcomes the problem of conventional devices using a semi-transmissive reflective film, but also increases the mirror-to-hole ratio of each pixel, even when compared with a general transmissive liquid crystal display device. If there is only a high-transmission-efficiency layer for forming a pixel electrode, then the high-transmission-efficiency layer and the high-reflection-efficiency layer therein are electrically connected to each other to form a pixel electrode of a pixel, and the middle-high-transmission-efficiency layer and Compared with the pixel electrode with high reflection efficiency layers partially overlapping each other to form a pixel, the possibility of defects caused by the pixel electrode can be reduced. -69-This paper size applies to Chinese National Standard (CNS) A4 specification (210 × 297 male yellow) 509809

AT ____ _B7 V. Description of the invention (67) The south transmission efficiency layer or high reflection efficiency layer may be made of the same material as the source line or gate line. This simplifies the manufacturing process of the liquid crystal display device. The area of the high reflection efficiency region in the effective pixel region is set to occupy about 10 to about 900 /. . This setting also overcomes the problems that the conventional transmissive liquid crystal display device becomes less readable when the ambient light is too bright and the conventional reflective liquid crystal display device becomes completely unrecognizable when the ambient light intensity is too low. Therefore, regardless of the amount of ambient light, you can use the reflection mode display, transmission mode display, or both reflection mode display and transmission mode display to get the best display. The reflective / transmissive liquid crystal display device of the present invention is particularly effective when it is applied to a device in which the display screen cannot swing or move to a better environment where it is more convenient for an operator to use. The liquid crystal display device of the present invention is actually used as a camera (detector screen) in a battery-driven digital camera or video camera. As a result, it was found that regardless of the ambient brightness, the brightness of the backlight can be adjusted to maintain the brightness suitable for viewing, while maintaining low energy consumption. When the transmission-type liquid crystal display device for outdoor use is used outdoors in bright sunlight, even if the brightness of the backlight is increased, it becomes less readable. In this case, the liquid crystal display device of the present invention can be used as a reflection type liquid crystal display device by turning off the backlight, or it can be used as a transmission / reflection type device by reducing the brightness of the backlight. As a result, it is possible to obtain good display quality and reduce energy consumption. When the liquid crystal display device of the present invention is used indoors where bright sunlight enters, the reflection mode display and transmission mode display can be switched according to the orientation of the target object or both can be used at the same time to obtain a more easily identifiable display. When the debt is measured by receiving direct sunlight, outdoor conditions with bright sunlight can be used. -70- This paper is suitable for standard paper ® a family standard (CNS) A4 specification (21〇X 297 public love) ---------- ______ B7 V. Description of the invention (68) When the child's target object is indoors When imaging in the dark corners of the camera, the backlight is turned on to use the device as a reflection / transmission mode display. When the liquid crystal display device of the present invention is used as a detection screen in an on-vehicle device such as an on-vehicle navigator, the display can be reliably recognized regardless of the brightness of the ambient light. In a car navigator using a conventional liquid crystal display device, use a light source that is brighter than that used by a personal computer or the like, and can be used in an environment with good weather and direct sunlight. However, despite this high brightness, the display is still less readable in the aforementioned environment. On the other hand, with this high brightness, the illumination is too bright to dazzle the user, and therefore has a negative effect. In the car navigator using the liquid crystal display device of the present invention, the reflection mode display is always used together with the transmission mode display. This can be well displayed in a bright environment without increasing the brightness of the backlight. Conversely, in extremely dark environments, it is possible to obtain an identifiable display by illuminating it with only low brightness (approximately 50 to 100 c d / m2). Those skilled in the art will recognize various other modifications without departing from the scope and spirit of the invention. Therefore, the scope of patent application is not limited to the foregoing description, but is a broad scope of patent application. -71-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

π, the scope of patent application 7. According to the application, the liquid crystal display device of the sixth scope of the patent application, wherein the reflective electrode region is located on the transmissive electrode region, a step is formed on the surface of the first substrate, and the liquid crystal layer is on the reflective region The thickness in is smaller than the thickness of the liquid crystal layer in the transmission region. 8. The liquid crystal display device according to item 7 of the scope of patent application, wherein the thickness of the liquid crystal layer in the reflection region is about one and a half of the thickness of the liquid crystal layer in the transmission region. 9. The liquid crystal display device according to item 6 of the scope of patent application, wherein each pixel electrode includes a reflective electrode located in a reflective electrode region and a transmissive electrode located in a transmissive electrode region. 10. The liquid crystal display device according to item 9 of the scope of patent application, wherein the reflective electrode and the transmissive electrode are electrically connected to each other. 1 1. The liquid crystal display device according to item 6 of the patent application, wherein each pixel electrode includes a transmissive electrode, and the reflective region includes a transmissive electrode and a reflective layer isolated from the transmissive electrode. 12. The liquid crystal display device according to item 6 of the scope of patent application, wherein the reflective electrode region weighs at least a portion of the plurality of gate lines, the plurality of source lines, and the plurality of switching elements. 13. The liquid crystal display device according to item 6 of the scope of patent application, wherein at least one of the reflective electrode region and the transmissive electrode region has a material layer that is the same as the material of the plurality of gate lines or the plurality of source lines. . 14 · The liquid crystal display device according to item 5 of the scope of patent application, wherein the area of the reflection area in each pixel area accounts for about 10 to about 90%. 1 5 · The liquid crystal display device according to item 6 of the patent scope, wherein the first substrate additionally includes a storage capacitor electrode for communicating with the -73- through an insulating film. This paper standard applies to China National Standard (CNS) A4 specifications (2i〇x 297 male ouy The pixels and electrodes form a storage capacitor, wherein the reflective electrode region overlaps the storage capacitor electrode. 16. The liquid crystal display device according to item 5 of the scope of patent application, wherein the liquid crystal display device further includes a micro lens on the first substrate and on a surface opposite to the liquid crystal layer. 17 · The liquid crystal display device according to item 6 of the scope of patent application, wherein each reflective electrode region includes a metal layer and an intermediate layer insulating film located below the metal layer. 18. The liquid crystal display device according to item 7 of the patent application scope, wherein the metal layer has a continuous wave type. 19. The liquid crystal display device according to item 8 of the scope of patent application, wherein the interlayer insulating layer has a concave and convex shape. 20. The liquid crystal display device according to item 17 of the application, wherein the interlayer insulating layer is formed of a photosensitive polymer resin film. 2 1. The liquid crystal display device according to item 7 of the patent application scope, wherein the intermediate layer insulating layer covers at least a part of the switching element, the plurality of gate lines, or the plurality of source lines. -2 ′ The liquid crystal display device according to item 9 of the patent application range, wherein the reflective private electrode is formed at the same height as the plurality of gate lines or the plurality of source lines. 2 3 · The liquid crystal display device according to item 22 of the patent application scope, wherein the reflective electrode is located at the same height as the plurality of gate lines, and the reflective electrode is electrically connected to the gate lines for supply The pixel electrode adjacent to the reflective electrode is used. -74-This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) AB c D 509809 VI. Patent application scope 2 4. According to the application, please apply for the liquid crystal display device in the patent scope No. 22, among which The same signal applied to the pair of electrodes is applied to the reflective electrode. 25. The liquid crystal display device according to item 22 of the scope of patent application, wherein the reflective electrode is formed at the same height as the plurality of gate lines, and the reflective electrode is formed by making the drain or transmissive electrode of the switching element Overlap to form a storage capacitor. 2 6 ♦ The liquid crystal display device according to item 9 of the patent scope, wherein the reflective electrode is formed of aluminum or an aluminum alloy. 27. The liquid crystal display device according to item 26 of the patent application scope, wherein the transmissive electrode is formed of indium tin oxide, and a metal layer is sandwiched between the transmissive electrode and the non-reflective electrode. 2 8. A method for manufacturing a liquid crystal display device, the liquid crystal display device comprising a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate, the first substrate The substrate includes: a plurality of gate lines, a plurality of source lines, which intersect the plurality of gate lines, and a plurality of switching elements, which are located near the intersection of the plurality of gate lines and the plurality of source lines And a plurality of pixel electrodes, which are connected to the plurality of switching elements, the second substrate includes a counter electrode, and the plurality of pixel regions are sandwiched by the plurality of pixel electrodes, the counter electrode, and A plurality of pixel electrodes is defined by a liquid crystal layer between the pair of electrodes, and each of the plurality of pixel regions includes a reflective region and a transmissive region. The method includes the steps of: using a material with high light transmittance at the first A transmissive electrode region is formed on a substrate to form a photosensitive polymer resin layer; and -75- This paper is fully compliant with China National Standard (CNS) A4 (210X297 mm): ------------ 509809 A8 B8 C8 ______ D8 6. Scope of patent application In this: The polymer resin layer forms a reflective layer made of a material with high reflectivity. 29. The method according to item 28 of the scope of patent application, wherein the photosensitive polymer resin layer has a plurality of depressed portions and raised portions. 30. A method for manufacturing a liquid crystal display device, the liquid crystal display device includes a first substrate, a second substrate, and a liquid crystal layer sandwiched between the first substrate and the second substrate, the first substrate The chip substrate includes: a plurality of gate lines, a plurality of source lines crossing the plurality of gate lines, and a plurality of switching elements located at the intersections of the plurality of gate lines and the plurality of source lines Nearby; and a plurality of pixel electrodes, which are connected to the plurality of switching elements, the second substrate includes a counter electrode, and the plurality of pixel regions are formed by the plurality of pixel electrodes, the counter electrode, and the sandwiching electrode. A liquid crystal layer is defined between the plurality of pixel electrodes and the pair of electrodes, and each of the plurality of pixel regions includes a reflective region and a transmissive region. The method includes the steps of: using a material having a high light transmittance at A transmissive electrode region is formed on the first substrate, a protective film is formed on the transmissive electrode region; and a material layer having high reflectivity is formed on a part of the protective film to form the reflective electrode region. 31. The method according to claim 30 of the patent application, wherein the transmissive electrode region is formed at the same height as the plurality of gate lines. -76-This paper size applies to China National Standard (CMS) A4 (210 X 297 mm)