經濟部智慧財產局員工消費合作社印製 1240020 A7 p----- B7__ 五、發明說明（1 ) 本發明係關於單晶矽晶圓及其製造方法，特別是關於 可抑制在熱處理工程易產生之滑動變位成長之單晶矽晶圓 及其製造方法。 L S I等集體電路，主要係使用由所謂切克勞斯基法 (C Z法）製成之單晶矽晶圓，經施加多數製造工程予以 製成。其製造工程之一則有熱處理工程。該熱處理工程爲 進行晶圓表層之氧化膜形成，雜質擴散，無缺陷層及吸氣 層之形成等之非常重要工程。 該熱處理工程所用一次可熱處理多數片晶圓之所謂分 批式電阻加熱型熱處理爐乃有水平爐及直立爐。其中水平 爐爲將晶圓以略垂直狀態載置於保持晶圓用所謂晶舟之夾 具而插入爐內進行熱處理之型式者，直立爐則是將晶圓以 水平狀態載置於晶舟而插入爐內進行熱處理之型式者。 熱處理工程之問題之一有滑動位錯之發生。所謂滑動 位錯乃是因熱處理工程中之熱應力促使結晶滑動變形而晶 圓表面發生高低差之欠陷，當晶圓表面發生如此滑動位錯 時，不僅晶圓機械強度會下降，亦有接合漏泄，對裝置特 性帶來不良影響，故應極力予以減低較宜。 使用如上述分批式熱處理爐進行熱處理時，由於晶圓 出入熱處理爐或爐內溫度昇降會使晶圓面內發生溫度分佈 ，並因該溫度分佈而產生應力。且該應力超過所定臨界値 時即發生滑動位錯。此時由於晶圓被載置於晶舟上，致晶 圓重量易集中於與晶舟接觸部位，故接觸部份之應力作用 較大而易發生滑動位錯。尤其晶圓爲大口徑日寸，晶圓重星 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -4- 1240020 A7 B7 五、發明說明（2) 較大其影響愈大。 另，除上述分批式熱處理爐外，有時利用燈光加熱等 之單張式熱處理爐之R T A ( Rapid Thermal Annealing)裝 置亦被使用於熱處理工程。此種裝置由於單張式處理，昇 降溫速度極快，比及分批爐較不易發生晶圓面內之溫度分 佈，故對大口徑晶圓熱處理特別有效，惟在與載置晶圓之 夾具之接觸部位易發生因晶圓自重致應力集中而滑動位錯 之現象卻與分批爐相同。 爲抑制此種滑動位錯之發生，以往主由兩觀點被謀圖 改善。其一爲減低晶圓與晶舟接觸部位之應力，且藉改善 晶舟形狀以圓回避應力集中者。例如特開平 9 一 2 5 1 9 6 1號公報所揭露之技術，則是藉將直立型 熱處理用晶舟之晶圓載置部角度設成對應於晶圓自重所引 起彎曲之形狀，而促使晶圓與晶舟之接觸部由點接觸變爲 面接觸以防止應力集中。 另一觀點乃是欲減輕熱處理工程中所產生晶圓面內之 溫度分佈而改良熱處理條件者.例如特開平 7 - 2 3 5 5 0 7號公報所記載技術係爲藉使用熱傳導率 比通常所使用氮或氬較高之氫或氨以活發化對於晶圓之熱 傳導，而促使減低晶圓面內之溫度差。又在特開平 7 - 3 1 2 3 5 1號公報則有藉愈高溫愈使昇降溫速度減 慢以以防止發生滑動位錯之提案。 由該兩觀點之引路，不只上述例，亦知有其他多數例 ，且關於抑制熱處理工程之滑動位錯雖該等各有其觀應之 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 41閲續背而之;.1急事項再填寫本頁) 訂---------線* 經濟部智慧財產局員工消費合作社印製 -5- 1240020 經濟部智慧財產局員工消費合作社印製 A7 ___^B7 五、發明說明（3 ) 效果，唯對於裝置製作工程中所施加多種多樣熱處理工程 是否均萬無一失？卻未心，亦有因成本問題而難予實用化 之情形。 又，除了爲抑制滑動位錯之發生所記載上述兩觀點之 引路外，最近亦有藉改良晶圓本身特性以提昇耐滑動性之 嚐試。例如在特開平9 一 2 2 7 2 9 0號公報，著眼於由 C Z法拉起之單晶棒所製成單晶矽晶圓外周部之氧氣濃度 比中央部低爲發生滑動位錯之主因，而提案一種外周部氧 氣濃度爲中央部氧氣濃度之9 5 %以上晶圓，且以該晶圓 製造方法記載有拉起比製晶晶圓直徑大1 〇 m m以上直徑 之單晶棒再予以削成目標直徑之方法。 又在特開平9 一 1 9 0 9 5 4號公報，關於低氧氣濃 度之C Z晶圓，亦記載有於易發生滑動位錯之外周1 〇 m m以下範圍以所定密度予以形成多面體氧氣析出物而可 抑制滑動位錯之發生。 且揭露爲促使該氧氣析出物產生所定密度，將氧氣予 以離子注入於外周1 0 m m以下範圍，獲於氮瓦斯氣氛施 加兩階段熱處理之技術。 惟，g亥寺技術均屬改良晶圓本身特性之技術，雖在所 有熱處理工程有獲得效果之可能性，卻均無法說成簡便性 ，成本性均已足夠而欠乏實用性。亦即，特開平 9 - 2 2 7 2 9 0號公報所記載技術其政單晶棒之損耗較 多，需較長加工所費時間，在特開平9 一 1 9 0 9 5 4公 報之技術則需要離子注入及兩階段熱處理之附加工程。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6- (請先閱讀背面之注意事項再填寫本頁) -I I I I---訂---I-----一 經濟部智慧財產局員工消費合作社印製 1240020 A7 ____B7 _ 五、發明說明（4 ) 本發明乃鑑於上述問題所創作者，係提供一種使供給 熱處理工程之c Z單晶矽晶圓與熱處理晶舟接觸部位之耐 滑動性予以提昇之單晶矽晶圓及可極簡便且低成本予以製 成之方法爲目的。 爲達成上述目的，本發明單晶矽晶圓係爲由切克勞斯 基法予以製成之單晶矽晶圓，亦是在將該單晶矽晶圓欲熱 處理載置於晶舟時，至少該單晶矽晶圓與晶舟接觸部位由 〇S F環領域所成爲特徵之單晶矽晶圓。如是晶圓與晶舟 接觸部位由〇 s F環領域所成之單晶矽晶圓，則一旦在接 觸部位發生滑動位錯，亦由於在晶圓內部（表體部）停止 晶圓成長，致不會到達滑動位錯表面，而不致對晶圓表面 側之裝置領域波及影響。 又，〇S F環領域在單晶矽晶圓之外周1 〇 m m以下 範圍較宜。因爲如〇S F環領域至達1 0 m m更內側時， 可製成特性優異裝置之面積會減少，有時無法製作足夠數 量之裝置所致，直立爐時由於晶圓與晶舟之接觸部最深位 於自外周部約8 m m之位置，故只要〇S F環領域爲自外 周1 0 m m左右位置即有抑制滑動位錯成長之效果。又， 水平爐時晶圓與晶舟之接觸部最深亦僅爲自外周部3 m m 程度，故只要〇S F環領域位置爲自外周5 m m左右即有 能抑制滑動位錯成長之效果。 且，單晶矽晶圓之氮濃度爲1 X 1 0 1 0〜5 X 1〇1 / c m 3較佳。如含有如此氮濃度之晶圓則由於氮效果可使 氧析出物之尺寸縮小以增加密度，而能更有效抑制滑動位 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂—-------線 (請先閱讀背面之注意事項再填寫本頁) A7 1240020 ______Β7 _ 五、發明說明（5 ) 錯。 又，爲增加氧析出物之密度雖將氮濃度設成1 X 1 〇 1 ^以上較宜，且爲避免妨礙單晶矽之單結晶化將氮濃 度設於5 X 1 0 1 5 / C m 3以下較妥。惟關於抑制滑動位 錯之更適宜氮濃度範圍卻是X 1 〇12〜5 X 1 〇15/ c m 3 〇 爲製成如此單晶矽晶圓，本發明之單晶矽晶圓製造方 法係爲藉切克勞斯基法培育矽單晶棒時，將矽單晶棒以外 周部能形成〇 S F環領域之條件予以拉起，復切割該矽單 晶棒而製成單晶矽晶圓爲特徵之單晶矽晶圓製造方法。 且作爲其具體之拉起條件，乃以將拉起速度由F〔 m m / m i η〕及自矽融點至1 4 0 0 °C間之拉起軸向之 結晶內溫度傾斜平均値由G〔 °C / m m〕分別加以表示時 ，自結晶中心至結晶周邊方向之距離〔m m〕設爲橫軸， 及F / G〔 m m 2 / °C · m i η〕之値設爲縱軸所顯示缺陷 分佈圖之〇S F環領域位於結晶外周部爲條件。 又，在上述切克勞斯基法培育矽單晶棒時，將氮於1 X 1 0 1 °〜5 X 1 0 1 5 / c m 3範圍予以摻雜拉起結晶， 則氮在1 X 1 01Q〜5 X 1 015/cm3範圍該摻雜而可 製成單晶矽晶圓。 〔圖示之簡單說明〕 圖1爲本發明有關晶圓與晶舟接觸部發生滑動位錯情 況之模式顯示圖。 (請先閱讀背面之注意事項再填寫本頁) 訂---------線一 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8- 1240020 A7 B7 五、發明說明（7 ) 〔發明之最佳實施形態〕 以下說明本發明之實施形態。 (請先閱讀背面之注意事項再填寫本頁) 本發明人針對由各種拉起條件所製成單晶矽晶圓予以 施加熱處理，係就多半自與晶舟接觸部位發生之滑動位錯 進行調查結果，發覺與晶舟接觸部位被〇 S F環領域包圍 之晶圓較少發生滑動位錯，且就算發生亦未到達接觸部位 反側面之晶圓表面，而完成本發明。 在此先說明〇S F環領域。 當將由C Z法拉起之矽單晶棒所製成C Z晶圓予以施 加氧化處理時，會有發生環狀之所謂〇SF (Oxidation-induced Stacking Fault， 氧化感應疊積層欠陷 ） 欠陷之情形 。此領域被稱謂0 S F環領域，料想以結晶成長中被導入 於該領域之微細氧氣析出物（〜3 0 m m )爲核芯，且在 其後之氧化處理晶格間之矽凝聚於該核芯所致。 圖3爲將改變結晶拉起速度時之0 S F環領域發生情 況予以模式顯示者。依據圖3，可知當減慢拉起速度時環 徑趨小，不久在結晶中心消失（參照篠山外，應用物理第 6〇卷第8號（1991) P.766〜773)。 經濟部智慧財產局員工消費合作社印製 因此，0 S F環領域之發生情況係依賴於結晶成長條 件，可知如控制結晶成長條件即能在所盼位置形成〇 S F 環領域。 又依據最近之硏究，亦確認在圖3挾住〇S F環領域 之上下位置存在有被稱謂N -領域之起因於空位或晶格間 矽之無結晶欠陷（極少）領域（參照特開平 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- 1240020 A7 B7 五、發明說明（8) (請先閱讀背面之注意事項再填寫本頁) 1 1 — 1 4 7 7 8 6號公報）。且0 S F環領域內側之N -領域更內側（拉起速度高速側）被稱謂空位起因欠陷多 之V -豐裕領域，並〇 S F環領域外側之N 一領域更外側 (拉起速度低速側）被稱謂晶格間砂起因欠陷多之1 一豐 裕領域。 圖1爲將本發明槪念予以簡潔表現者，乃將晶圓與晶 舟之接觸部位之滑動位錯發生狀況予以模式性顯示。 圖1 ( a )爲顯示無0 S F環領域之晶圓，在接觸部 位發生之滑動位錯已達至晶圓表面。另，圖1 ( b )爲接 觸部位在0 S F環領域內之情形，雖在接觸部位發生滑動 位錯亦未到達晶圓表面之情形。圖1雖是顯示直立爐時之 情形，但水平爐時亦同樣只要與晶舟接觸部份位在〇 S F 環領域內即有抑制滑動位錯成長之效果。 經濟部智慧財產局員工消費合作社印製 如果在0 S F環領域不易發生滑動位錯，或雖發生亦 在晶圓內部停止滑動位錯之成長，致雖不淸楚不易達到晶 圓表面之理由，唯如上述〇SF環領域如前述存在有構成 〇S F核芯之微細氧氣析出物，以及被謂領域全體含有過 剩晶格間矽（阿部孝夫著作，培鳳館發行，矽晶成長與晶 圓加工，P · 2 9 6 )等，故可料想該等氧氣析出物或格 子間矽有關與。 又亦知於矽單晶中摻雜氮時可抑制矽酮中之原子空位 凝聚以縮小結晶欠陷之大小，並具促進氧氣析出之效果。 因此如摻雜氮氣將上述◦ S F環領域形成於外周部，則可 在晶圓外周部提高構成〇 S F核芯之微細氧氣析出物之密 -11 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 1240020 A7 ----__B7___ 五、發明說明（9 ) ®，而料想藉此能提滑動位錯抑制效果。 (請先閱讀背面之注意事項再填寫本頁) 其次，參照圖5說明本發明所使用C Z法之拉晶裝置 構造例。如圖5所示，該拉晶裝置3 0係具有拉起室3 1 ，與被設置於拉起室3 1內之坩堝3 2，與被配置於坩堝 3 2周圍之加熱器3 4，與可使坩堝3 2轉動之坩堝軸 3 3及其轉動機構（未圖示），與保持矽種子結晶5之籽 晶夾頭6，與拉起籽子夾頭6用之捲揚線7，以及使捲揚 ^ 7旋轉式或予以捲繞之捲繞機構（未圖示）所構成。該 ί甘堝3 2內側之容納矽融液（熱湯）側乃設有石英坩堝， 該坩堝3 2外側則設有石墨坩堝。又在加熱器3 4外周圍 尙設有隔熱材料3 4。 又爲設定本發明裝置方法有關之製造條件係在結晶固 液界面外側設置固液界面隔熱材料8 ,其頂面再配設頂部 圍繞隔熱材料9。該固液界面隔熱材料8則在底端與矽融 液2之液面間設有3〜5 c m之間隙1 0。頂部圍繞隔熱 材料9隨條件有時亦不予使用。且亦可裝設可噴吹冷卻氣 體，或遮住輻射熱以冷卻單晶之未圖示筒狀冷卻裝置。 經濟部智慧財產局員工消費合作社印製 另，最近亦有相當多採用在拉起室3 1水平方向外側 設置未圖示磁鐵，藉施加平行於矽融液2方向或垂直方向 等之磁場，以抑制融液對流，謀圖矽單晶穩定成長之所謂 M C Z 法。 其次，就藉上述拉晶裝置3 0之單晶培育方法加以說 明。 首先在坩堝3 2內將矽酮之高純度多結晶原料加熱熔 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- 1240020 A7 B7 五、發明說明（10) 解至融點（約1 4 2 0 °C )以上。此時欲摻雜氮時即予以 投入例如附有氮化膜之矽晶圓。其次藉導出捲揚線7將種 子結晶5前端接觸或浸漬於融液2表面略中心部。接著使 坩堝軸3 3予以轉動適當方向同時，並使捲揚線7旋轉而 拉起種子結晶5以開始矽單晶培育。之後適當調節拉起速 度及溫度則可獲得略圓柱狀之單晶棒1。 本發明乃控制拉起條件促使上述所謂0 S F環領域形 成於單晶棒1外周部。例如採用如圖5藉變化單晶拉起速 度可控制0 S F環領域產生位置之具特定爐內構造拉晶裝 置時，將拉起速度控制呈能在單晶外周部產生0 S F環領 域即可。〇S F環領域促成於自晶圓外周1 〇 m m以下範 圍較宜。 唯，欲僅控制拉起速度俾使0 S F環領域穩定只發生 於結晶外周部，即需要嚴密控制拉起溫度。於是如上述利 用隔熱材料或冷卻裝置以調整爐內構造而控制拉起結晶之 固液界面附近溫度傾斜，乃能促使圖3之〇S F領域產生 分佈變化。此時如圖4將拉起速度設爲F〔 m m /m i η 〕，並將自矽融點至1 4 Ο 0 t：間之拉起軸向之結晶內溫 度傾斜平均値以G〔 °C / m m〕表示，且將F / G〔 m m / °C · m 1 η〕値作爲參數時，即能將〇S F環領域位置 於結晶外周部之條件以從容控制幅度加予控制。 將如上〇S F環領域位於結晶外周部之矽單晶棒予以 拉伸，且將之藉通常之晶圓加工程序予以加工爲晶圓，即 能獲得在以後熱處理工程時易與晶舟發生接觸之晶圓外周 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂---------線“ 經濟部智慧財產局員工消費合作社印製 -13- 1240020 經濟部智慧財產局員工消費合作社印製 Α7 Β7 i、發明說明（11) 部具有〇S F環領域之晶圓。 亦即，由於僅控制拉晶時0 S F環領域之發生位置係 可獲得能抑制滑動位錯發生之晶圓，致不會增加加工損耗 或不需增加附加工程，而可非常有效減輕成本。 以下乃就本發明具體實施形態舉實施例加予說明。唯 本發明並非限定於該等實施例。 (實施例1 ) 以圖5所不拉晶裝置3 0，將多晶砂原料裝入20吋 石英坩堝，並拉起直徑6吋，方位<1〇〇>，導電型p 型之矽單晶棒。此時將結晶中心部之F / G値以〇 . 2 5 〜0 · 3 3 m m 2 / °C · m 1 η之範圍予以控制，並在自結 晶外周約1 0 m m以內之位置形成〇S F環領域。又藉將 附氮化膜晶圓裝入於多結晶原料而使拉起結晶中之氮濃度 計算上控制爲呈4x 1 013〜1 X 1 014/cm3。 自如此所得單晶體切割出晶圓，經施加通常之晶圓加 工工程製成鏡面晶圓。將該鏡面晶圓投入於直立爐，施加 1 1 5 0 °C，1小時氬氣氛之熱處理，再施加8 0 0 t：， 4小時（氮氣氛）+ 1 0 0 0 °C， 1 6小時（乾燥氧氣氛 )之裝置製作模仿熱處理後，復由X射線局部解剖圖確認 有無滑動位錯及〇S F環領域之位置。1 1 5 0 °C， 1小 時之氣氣氛熱處理乃以入出爐溫度8 5 0 C，晶舟速度 15cm/min，昇溫速度l〇°C/min，降溫速度 5 °C / m i η予以進行，模仿裝置製作之熱處理則經 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14- --------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 1240020 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（12) 1 0 0 °C熱處理後再降溫至8 0 0 °C才由爐內予以取出。 熱處理即使用石英製晶舟。0 S F環領域位置田於◦ S F 環領域之氧析出比其他部位不易發生，是故由氧析出圖形 加予判斷。其結果以模式圖顯示於圖2 ( a )。如圖2 ( a )所示全然未觀察到滑動位錯。又，〇S F環領域自晶 圓外周部被形成至1 0 m m弱深。 (實施例2 ) 用圖5所示拉晶裝置3 0將多晶矽原料裝入2 0吋石 英坩堝，並不摻雜氮而提起直徑6吋，方位< 1 0 0 >， 導電型P型之矽單晶棒。此時將結晶中心部之F / G値控 制於〇· 1 8〜0 · 2 2 m m 2 / °C · m i η之範圍，且於 自結晶外周約1 0 m m以內位置形成〇S F環領域。 自在此所獲單晶體切割出晶圓，施加通常之晶圓加工 工程予以製成鏡面晶圓。對於該鏡面晶圓施加與實施例1 相同之熱處理，並進行X射線局部解剖圖之觀察，將其結 果記載於圖2 ( b )。 由其結果可知自與晶舟接觸部發生有約7 m m深之滑 動位錯。將經X射線局部解剖圖觀察後之晶圓以氟酸，硝 酸系之選擇性腐蝕液予以蝕刻後，由光學顯微鏡觀察晶圓 表面以確認有無滑動位錯之蝕刻孔，卻觀察不到滑動位錯 之蝕刻孔，可確認滑動位錯未到達晶圓表面。又，D S F 環領域則自晶圓外周部被形成至1 〇 m m弱深。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -15- !!!-----f--------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1240020 A7 __ B7 _ 五、發明說明（13) (比較例1 ) 以圖5所示拉晶裝置3 0，將多晶矽原料裝入於2 0 吋石英坩堝，並不摻雜氮而拉起直徑6吋，方位< 1 〇 〇 >，導電型P型矽單晶棒。此時，將成長速度設於約 1 · η以不產生〇SF環領域之條件拉起單 晶棒。 自在此所得單結晶體切割出晶圓，並施加通常之晶圓 加工工程而製成鏡面晶圓。對該鏡面晶圓施予與實施例1 相同之熱處理，經進行X射線局部解剖圖觀察，將其結果 記載於圖2 ( C )。 由其結果可知自與晶舟接觸部位發生有約1 5 m m長 之滑動位錯。經進行與實施例2相同選擇性腐蝕，由光學 顯微鏡觀察晶圓表面結果，卻觀察到滑動位錯之飩刻孔， 可確認滑動位錯已達到晶圓表面。 於是自圖2之結果可知，晶圓與晶舟之接觸部位如由 〇S F環領域所成之晶圓，則雖進行易發生滑動位錯之高 溫熱處理，亦全然不會發生滑動位錯，或至少能抑制滑動 位錯之成長。 (實施例3，實施例4，比較例2 ) 使用實施例1，實施例2及比較例1所用相同單晶砂 所製成之晶圓進行水平爐之熱處理。該熱處理乃經與實施 例1相同之1 1 5 0 °C， 1小時氬氣氛熱處理後，再予以 施加8 0 0 °C， 4小時（氮氣氛）+ 1〇〇〇°C， 1 6小 ! ! !.-----f--------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -16- 1240020 A7 B7 五、發明說明（14) 時（乾燥氧氣氛）之模仿裝置製作之熱處理° 1 1 5 0 °C ，1小時氬氣氛熱處理係以入出爐溫度9 5 0 °C，晶舟速 (請先閱讀背面之注意事項再填寫本頁) 度1 5 cm/mi n，昇溫速度6°C/mi n，降溫速度 3 °C / m i η加以進行，模仿裝置製作之熱處理則於 1 0 0 0 °C熱處理後降溫至8 0 0 °C才自爐內予以取出。 而熱處理即使用石英製晶舟。 經施加熱處理之晶圓有無滑動位錯及0 s F環領域之 位置乃由X射線局部解剖圖加予確認。 與實施例1所用相同單晶矽予以製成之晶圓（實施例 3 )卻全然未觀察到滑動位錯。 與實施例2使用之相同單晶矽所製成之晶圓（實施例 4 )雖發生有自與晶舟接觸部位約4 m m長之滑動位錯， 唯經進行與實施例2相同之選擇性腐蝕再以光學顯微鏡觀 察之結果，雖與晶舟接觸部位近傍存在有若干鈾刻孔，但 自晶圓外周部2 m m以上內側部份並未觀察到滑動位錯之 蝕刻孔，而可確認0 S F環領域具有抑制滑動位錯成長之 效果。且在實施例及實施例4之晶圓，〇S F環領域乃自 晶圓外周部被形成至1 0 m m弱之深。 經濟部智慧財產局員工消費合作社印製 由比較例1所用相同單晶矽製成之晶圓（比較例2 ) 則發生有自與晶舟接觸部位約2 0 m m長之滑動位錯。且 經進行與實施例2相同之選擇性腐蝕，由光學顯微鏡觀察 晶圓表面結果，以X射線局部解剖圖觀察之部份卻觀察到 滑動位錯之蝕刻孔。 依據本發明，由於對供給各種熱處理工程之單晶矽晶 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -17- 1240020 A7 B7 五、發明說明（15) 圓與熱處理晶舟接觸部位易發生滑動位置能以簡便之方法 加予控制，且不需增加加工損耗及追加工程，能以低成本 提供高滑動耐性之單晶矽晶圓，故產業上之利用價値甚高 --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -18- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1240020 A7 p ----- B7__ V. Description of the Invention (1) The present invention relates to single crystal silicon wafers and methods for manufacturing the same, and in particular, to suppress the susceptibility to heat treatment projects. Single crystal silicon wafer with sliding displacement growth and manufacturing method thereof. Collective circuits such as L S I are mainly made of single-crystal silicon wafers made by the so-called Czochralski method (C Z method), and are manufactured by applying most manufacturing processes. One of its manufacturing processes is heat treatment. This heat treatment process is a very important process for forming an oxide film on a wafer surface layer, diffusing impurities, forming a defect-free layer and a gettering layer. The so-called batch-type resistance heating type heat treatment furnace that can heat a large number of wafers at one time in the heat treatment process includes a horizontal furnace and an upright furnace. Among them, the horizontal furnace is a type in which wafers are placed in a slightly vertical state in a so-called wafer boat holder and inserted into the furnace for heat treatment. An upright furnace is a wafer that is placed in the wafer boat in a horizontal state and inserted. The type of heat treatment in the furnace. One of the problems in heat treatment engineering is the occurrence of sliding dislocations. The so-called sliding dislocation is caused by the thermal stress during the heat treatment process to cause the crystal to slide and deform the wafer surface. When the wafer surface has such a sliding dislocation, not only the mechanical strength of the wafer will decrease, but also the joint will leak. It has a bad influence on the characteristics of the device, so it should be reduced as much as possible. When a batch type heat treatment furnace is used for heat treatment as described above, the temperature distribution in the wafer surface occurs due to the wafer entering and leaving the heat treatment furnace or the temperature in the furnace, and stress is generated due to the temperature distribution. When the stress exceeds a predetermined threshold, sliding dislocations occur. At this time, because the wafer is placed on the wafer boat, the weight of the wafer circle tends to be concentrated on the contact portion with the wafer boat, so the stress on the contact portion is relatively large and sliding dislocations are liable to occur. In particular, the wafer is a large-caliber day-inch wafer. Note: Please fill in this page again.) This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -4- 1240020 A7 B7. 5. Description of the invention (2) The larger the impact, the greater the impact. In addition to the batch-type heat treatment furnace described above, R T A (Rapid Thermal Annealing) devices of sheet-type heat treatment furnaces using light heating or the like may be used in the heat treatment process. Due to the single-sheet processing, the temperature of this device is extremely fast, and the temperature distribution in the wafer surface is less likely to occur than in a batch furnace. Therefore, it is particularly effective for large-caliber wafer heat treatment. The contact part is prone to stress dislocation due to the weight of the wafer, and the phenomenon of sliding dislocation is the same as that of the batch furnace. In order to suppress the occurrence of such sliding dislocations, attempts have been made to improve them from two perspectives in the past. One is to reduce the stress at the contact part between the wafer and the boat, and to avoid stress concentration by improving the shape of the boat. For example, the technology disclosed in JP-A No. 9-2 5 1 9 6 1 is to promote the crystal by setting the angle of the wafer mounting portion of the vertical-type heat treatment wafer boat to a shape corresponding to the bending caused by the weight of the wafer. The contact between the circle and the wafer boat changed from point contact to surface contact to prevent stress concentration. Another viewpoint is to improve the heat treatment conditions by reducing the temperature distribution in the wafer surface generated during the heat treatment process. For example, the technique described in Japanese Patent Application Laid-Open No. 7-2 3 5 5 0 7 is based on the use of a thermal conductivity ratio than conventional The use of higher nitrogen or argon hydrogen or ammonia to activate heat transfer to the wafer promotes a reduction in the temperature difference within the wafer surface. Also in Japanese Patent Application Laid-Open No. 7-3 1 2 3 51, there has been a proposal that the temperature rise and fall rate is slowed down to prevent slipping dislocations by increasing the temperature. From the guidance of these two viewpoints, not only the above examples, but also many other examples, and the sliding dislocations of heat treatment engineering are suppressed. Although these different wood paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) 41 read the continuation in the back; .1 urgent matters and then fill out this page) Order --------- line * Printed by the Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives -5- 1240020 Ministry of Economics Wisdom Printed by A7 ___ ^ B7 of the Consumer Cooperative of the Property Bureau V. Description of the Invention (3) The effect is only foolproof for the various heat treatment projects applied in the device manufacturing project? However, there are cases where it is difficult to put it to practical use due to cost issues. In addition to the two approaches described above to suppress the occurrence of sliding dislocations, there have been recent attempts to improve the sliding resistance by improving the characteristics of the wafer itself. For example, in Japanese Unexamined Patent Publication No. 9 2 2 7 2 90, the main reason for the occurrence of sliding dislocations is that the oxygen concentration in the outer peripheral portion of the single crystal silicon wafer made of the single crystal rod drawn by the CZ method is lower than that in the central portion. A wafer with an oxygen concentration in the peripheral portion of 95% or more of the oxygen concentration in the central portion is proposed, and a single crystal rod having a diameter larger than 10 mm in diameter by pulling up the crystal wafer is described in the wafer manufacturing method. Method to achieve the target diameter. Also, Japanese Unexamined Patent Publication No. 9-119 0954 discloses that CZ wafers having a low oxygen concentration also describe formation of polyhedral oxygen precipitates at a predetermined density within a range of 10 mm or less from the periphery where sliding dislocations are liable to occur. Can suppress the occurrence of sliding dislocations. In addition, in order to promote a predetermined density of the oxygen precipitates, oxygen is ion-implanted to a range of less than 10 mm on the periphery, and a technique of applying two-stage heat treatment in a nitrogen gas atmosphere is disclosed. However, the ghaisi technology is a technology to improve the characteristics of the wafer itself. Although it is possible to obtain results in all heat treatment projects, it cannot be said to be simple, cost-effective is sufficient and lacks practicality. That is, the technology described in JP-A 9-2 2 7 2 9 0 has a large loss of the single crystal rod, which requires a long processing time. The technology disclosed in JP-A 9-119 0 9 5 4 Additional work is required for ion implantation and two-stage heat treatment. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -6- (Please read the precautions on the back before filling this page) -III I --- Order --- I ---- -Printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1240020 A7 ____B7 _ V. Description of the invention (4) The present invention was created in view of the above problems, and provides a cZ monocrystalline silicon wafer and heat treatment for heat treatment projects. The purpose is to provide a single crystal silicon wafer with improved sliding resistance at the contact part of the wafer boat and a method that can be fabricated at a low cost. In order to achieve the above object, the single crystal silicon wafer of the present invention is a single crystal silicon wafer made by the Cheklaussky method. When the single crystal silicon wafer is to be heat-treated and placed on a wafer boat, At least the contact portion of the single crystal silicon wafer with the wafer boat is a single crystal silicon wafer characterized by the SF ring field. In the case of single-crystal silicon wafers where the contact area between the wafer and the boat is formed by the 0s F-ring field, once sliding dislocations occur at the contact area, the wafer growth is also stopped within the wafer (surface body). It will not reach the surface of the sliding dislocation without affecting the device area on the wafer surface side. The FS ring area is preferably within a range of 10 mm or less from the periphery of a single crystal silicon wafer. Because if the area of 〇SF ring reaches 10 mm more inside, the area that can be made into a device with excellent characteristics will be reduced, and sometimes a sufficient number of devices cannot be made. In the vertical furnace, the contact between the wafer and the wafer boat is the deepest. It is located about 8 mm from the outer periphery. Therefore, as long as the 0SF ring area is about 10 mm from the outer periphery, the effect of suppressing the growth of sliding dislocations can be suppressed. In the horizontal furnace, the deepest contact between the wafer and the wafer boat is only about 3 mm from the outer periphery. Therefore, as long as the position of the FS ring region is about 5 mm from the outer periphery, the effect of suppressing the growth of sliding dislocations can be suppressed. In addition, the nitrogen concentration of the single crystal silicon wafer is preferably 1 X 1 0 1 0 to 5 X 1 0 1 / c m 3. For wafers containing such a nitrogen concentration, the nitrogen effect can reduce the size of the oxygen precipitates to increase the density, which can more effectively suppress the sliding position. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------- Order —------- line (please read the precautions on the back before filling this page) A7 1240020 ______ Β7 _ 5. Description of the invention (5) Wrong. In order to increase the density of the oxygen precipitates, it is preferable to set the nitrogen concentration to 1 X 1 〇1 ^ or more, and to prevent the single crystallization of single crystal silicon from interfering with the nitrogen concentration at 5 X 1 0 1 5 / C m. 3 or less is better. However, the more suitable nitrogen concentration range for suppressing sliding dislocations is X 1 〇12 ~ 5 X 1 〇15 / cm 3 〇 In order to make such a single crystal silicon wafer, the method for manufacturing a single crystal silicon wafer of the present invention is When cultivating a silicon single crystal rod by the Cheklaussky method, the conditions on the outer periphery of the silicon single crystal rod to form a 0SF ring are pulled up, and the silicon single crystal rod is repeatedly cut to make a single crystal silicon wafer. Features of single crystal silicon wafer manufacturing method. And as its specific pull-up condition, the average temperature gradient within the crystal is determined by the pull-up speed from F [mm / mi η] and the pull-up axial direction from the melting point of silicon to 14 0 ° C. When [° C / mm] is expressed separately, the distance from the center of the crystal to the periphery of the crystal [mm] is set on the horizontal axis, and F / G [mm 2 / ° C · mi η] is set as the vertical axis. It is a condition that the SF ring region of the defect map is located at the outer periphery of the crystal. In addition, when the silicon single crystal rod is grown by the above-mentioned Cheklaussky method, nitrogen is doped in a range of 1 X 1 0 1 ° to 5 X 1 0 1 5 / cm 3 to pull up and crystallize. Then, the nitrogen is 1 X 1 The range of 01Q ~ 5 X 1 015 / cm3 can be used to make single crystal silicon wafers. [Brief description of the figure] Fig. 1 is a pattern display diagram of the case where a sliding dislocation occurs between a wafer and a boat contact portion of the present invention. (Please read the precautions on the back before filling this page) Order --------- Printed by the Consumers Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) -8- 1240020 A7 B7 V. Description of the invention (7) [Best embodiment of the invention] The following describes the embodiment of the invention. (Please read the precautions on the back before filling this page.) The inventors applied heat treatment to single crystal silicon wafers made under various pull-up conditions, and investigated the sliding dislocations that mostly occur in contact with the wafer boat. As a result, it was found that the wafers in contact with the wafer boat surrounded by the SF ring area were less likely to have sliding dislocations, and even if they did not reach the wafer surface on the opposite side of the contact portion, the present invention was completed. The field of FS ring is explained first. When a CZ wafer made of a silicon single crystal rod pulled up by the CZ method is subjected to an oxidation treatment, a so-called OSF (Oxidation-induced Stacking Fault) sag may occur. This field is called the 0 SF ring field. It is expected that the fine oxygen precipitates (~ 30 mm) introduced into the field during crystal growth will be used as the core, and the silicon between the lattices of the subsequent oxidation treatment will condense in the core. Caused by the core. Fig. 3 is a pattern display of what happens in the 0 S F ring area when the crystal pull-up speed is changed. According to Fig. 3, it can be seen that when the pull-up speed is slowed, the ring diameter becomes smaller and disappears in the crystallization center soon (refer to Outer Shinoyama, Applied Physics Vol. 60 No. 8 (1991) P.766 ~ 773). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, the occurrence of the 0 S F ring field depends on the crystal growth conditions. It can be known that if the crystal growth conditions are controlled, the 0 S F ring field can be formed at the desired position. Based on recent research, it is also confirmed that there is an area called "N-field" in the upper and lower positions of the SF ring field in Fig. 3, which is due to vacancy or non-crystalline depression (silicon) in the inter-lattice silicon field (see JP-A-Hei. This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -10- 1240020 A7 B7 V. Description of the invention (8) (Please read the notes on the back before filling this page) 1 1 — 1 4 7 7 8 6). And the N of the inner side of the 0 SF ring field-the inner side of the field (the high-speed side of the pull-up speed) is called the V-rich area where there are many gaps due to vacancies. ) It is said to be one of the most abundant areas due to the lack of interstitial sand. Fig. 1 is a simplified representation of the concept of the present invention, and schematically shows the occurrence of sliding dislocations at the contact portion between the wafer and the boat. Figure 1 (a) shows a wafer without a 0 S F ring area. The sliding dislocations that have occurred in the contact area have reached the wafer surface. In addition, Fig. 1 (b) shows the case where the contact part is in the 0 S F ring area, and although the sliding dislocation occurs at the contact part, it does not reach the wafer surface. Although Fig. 1 shows the situation in the vertical furnace, the horizontal furnace also has the effect of inhibiting the growth of sliding dislocations as long as the contact part with the wafer boat is located in the 0S F ring area. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs if sliding dislocations are not easy to occur in the 0 SF ring field, or if the growth of sliding dislocations is stopped within the wafer, it is not easy to reach the surface of the wafer. Only in the above SF ring area, as mentioned above, there are fine oxygen precipitates that constitute the SF core, and the entire area is said to contain excess intercrystalline silicon (Abu Takao's work, issued by Peifeng Museum, silicon growth and wafer processing). , P · 2 9 6), etc., it is expected that these oxygen precipitates or inter-lattice silicon are related. It is also known that when nitrogen is doped in a silicon single crystal, atomic vacancy aggregation in silicon can be suppressed to reduce the size of crystal depression, and it has the effect of promoting the precipitation of oxygen. Therefore, if the above-mentioned SF ring region is formed on the outer periphery by doping with nitrogen, the density of the fine oxygen precipitates forming the 0SF core can be increased on the outer periphery of the wafer. -11-This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 1240020 A7 ----__ B7___ V. Description of the invention (9) ®, and it is expected that this can improve the effect of suppressing sliding dislocations. (Please read the precautions on the back before filling this page.) Next, an example of the structure of the crystal pulling device of the CZ method used in the present invention will be described with reference to FIG. 5. As shown in FIG. 5, the crystal pulling device 30 includes a pull-up chamber 3 1, a crucible 32 provided in the pull-up chamber 31, and a heater 3 4 arranged around the crucible 32, and A crucible shaft 33 capable of rotating the crucible 32 and a rotating mechanism (not shown), a seed chuck 6 for holding the silicon seed crystal 5, a hoisting wire 7 for pulling the seed chuck 6, and It is constituted by a winding mechanism (not shown) that makes the winding ^ 7 rotate or wind. A quartz crucible is provided on the inner side of the tiling pot 32, which contains the silicon melt (hot soup), and a graphite crucible is set on the outside of the crucible 32. In addition, a heat insulating material 3 4 is provided around the outside of the heater 3 4. In order to set the manufacturing conditions related to the device method of the present invention, a solid-liquid interface heat-insulating material 8 is provided outside the crystalline solid-liquid interface, and the top surface is further provided with a top surrounding the heat-insulating material 9. The solid-liquid interface insulation material 8 is provided with a gap 10 of 3 to 5 cm between the bottom end and the liquid surface of the silicon melt 2. The top surrounding insulating material 9 is sometimes not used depending on the conditions. A cylindrical cooling device (not shown) that can spray cooling gas or shield radiant heat to cool a single crystal can also be installed. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Recently, quite a lot of magnets are also installed on the outside of the pull-up room 3 1 horizontally, not shown in the figure. The so-called MCZ method, which suppresses the convection of the melt and seeks the stable growth of the silicon single crystal. Next, a method for cultivating a single crystal by the above-mentioned crystal pulling device 30 will be described. First, heat and melt the high-purity polycrystalline raw material of silicone in crucible 32. The size of the paper is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -12- 1240020 A7 B7 V. Description of the invention (10) Solution Above the melting point (about 1420 ° C). At this time, when nitrogen is to be doped, it is put into a silicon wafer with a nitride film, for example. Next, the leading end of the seed crystal 5 is brought into contact with or immersed in a slightly central portion of the surface of the melt 2 by the lead-out hoisting line 7. Next, the crucible shaft 33 is rotated in an appropriate direction, and the hoisting wire 7 is rotated to pull up the seed crystal 5 to start the silicon single crystal cultivation. After adjusting the pull-up speed and temperature appropriately, a slightly cylindrical single crystal rod 1 can be obtained. In the present invention, the pull-up condition is controlled to promote the formation of the above-mentioned so-called 0 S F ring region on the outer periphery of the single crystal rod 1. For example, when a crystal pulling device with a specific furnace structure that can control the position of the 0 SF ring area by changing the pull speed of the single crystal as shown in FIG. 5 is used, the pull speed can be controlled so that the 0 SF ring area can be generated on the outer periphery of the single crystal. . 〇S F-ring field is more suitable for the range below 10 mm from the wafer periphery. However, in order to control only the pull-up speed so that the stability of the 0 S F ring region occurs only at the outer periphery of the crystal, it is necessary to strictly control the pull-up temperature. Therefore, using the heat-insulating material or cooling device as described above to adjust the structure of the furnace and control the temperature gradient near the solid-liquid interface that pulls up the crystals can promote the distribution change in the SF area of Fig. 3. At this time, as shown in Fig. 4, the pull-up speed is set to F [mm / mi η], and the temperature within the crystal from the melting point of the silicon to 1 4 0 0 t: the average tilt in the axial direction is averaged with G [° C / mm], and when F / G [mm / ° C · m 1 η] 参数 is used as a parameter, the condition that the oSF ring region is positioned at the outer periphery of the crystal can be controlled with a calm control range. The silicon single crystal rod located at the outer periphery of the crystal in the SF ring area as described above is stretched and processed into a wafer by a usual wafer processing procedure, which can obtain a wafer that is easy to come into contact with the wafer boat in the subsequent heat treatment process. The paper size of the wafer periphery applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- Order ------ --- Line "Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-13- 1240020 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 Β7 i, Invention Description (11) Wafers in the field of 0SF ring. Because only controlling the occurrence position of the 0 SF ring area when pulling crystals, it is possible to obtain wafers that can suppress the occurrence of sliding dislocations, which will not increase processing losses or add additional engineering, and can effectively reduce costs. The following is Specific embodiments of the present invention will be described by way of examples. However, the present invention is not limited to these examples. (Embodiment 1) A polycrystalline sand raw material is charged into a 20-inch quartz crucible by using a crystal pulling device 30 shown in FIG. 5. And pull up 6 inches in diameter, bearing <1 〇〇 >, a conductive p-type silicon single crystal rod. At this time, the F / G at the center of the crystal is controlled in a range of 0.2 5 to 0.3 mm 2 / ° C · m 1 η, The SF ring area is formed within about 10 mm from the outer periphery of the self-crystal. The nitrogen concentration in the pull-up crystal is calculated to be 4x 1 013 by loading the nitrided film wafer into the polycrystalline raw material. ~ 1 X 1 014 / cm3. The wafer was cut out from the single crystal thus obtained, and a mirror wafer was prepared by applying a normal wafer processing process. The mirror wafer was put into an upright furnace and applied at 1 150 ° C, 1 Heat treatment with argon atmosphere for 8 hours, and then apply 8 0 t :, 4 hours (nitrogen atmosphere) + 1 0 0 ° C, 16 hours (dry oxygen atmosphere). After making a simulated heat treatment, the X-ray local anatomy is reproduced. Confirm the presence of sliding dislocations and the position in the SF ring area. 1 150 ° C, 1 hour gas atmosphere heat treatment is performed at the inlet and outlet temperature of 850 ° C, the boat speed is 15cm / min, and the heating speed is 10 ° C / min, cooling rate is 5 ° C / mi η, and the heat treatment of the imitating device is subject to the Chinese national standard according to the paper standard (CNS) A4 specification (210 X 297 mm) -14- -------- Order --------- Line · (Please read the precautions on the back before filling this page) 1240020 Economy A7 B7 printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau V. Description of the invention (12) After the heat treatment at 100 ° C, the temperature is reduced to 800 ° C before being taken out of the furnace. The quartz boat is used for heat treatment. 0 S F ring area location Tian Yu ◦ S F ring area is less prone to oxygen precipitation than other parts, so it is judged by the oxygen precipitation pattern. The results are shown in a pattern diagram in Figure 2 (a). As shown in Fig. 2 (a), no sliding dislocation was observed at all. In addition, the FS ring region was formed from the outer periphery of the crystal circle to a depth of 10 mm. (Example 2) A polycrystalline silicon raw material was loaded into a 20-inch quartz crucible using a crystal pulling device 30 shown in FIG. 5 and the diameter was 6 inches without being doped with nitrogen. The orientation was < 10 0 > Silicon single crystal rod. At this time, the F / G 値 of the central portion of the crystal was controlled to be in the range of 0.18 to 0.22 m 2 / ° C · m i η, and an FS ring region was formed at a position within about 10 mm from the outer periphery of the crystal. Wafers are cut from the single crystals obtained here and applied to normal wafer processing to produce mirror wafers. The mirror wafer was subjected to the same heat treatment as in Example 1, and an X-ray partial anatomy was observed. The results are shown in Fig. 2 (b). From the results, it can be seen that a sliding dislocation at a depth of about 7 mm occurred from the contact portion with the wafer boat. After the wafer observed by the X-ray local anatomy is etched with a selective etching solution of hydrofluoric acid and nitric acid, the surface of the wafer is observed by an optical microscope to confirm whether there are etching holes with sliding dislocations, but no sliding positions are observed. The wrong etching hole can confirm that the sliding dislocation has not reached the wafer surface. The D S F ring region is formed to a depth of 10 mm from the outer periphery of the wafer. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -15- !!! ----- f -------- Order --------- Line · (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1240020 A7 __ B7 _ V. Description of the invention (13) (Comparative Example 1) The crystal pulling device shown in Figure 5 3 0, the polycrystalline silicon raw material was loaded into a 20-inch quartz crucible, and a diameter of 6 inches was pulled up without doping nitrogen. The orientation was <100%>, a conductive P-type silicon single crystal rod. At this time, the growth rate was set to about 1 · η so that the single crystal rod was pulled up under the condition that no SF ring region was generated. A wafer is cut out from the single crystal obtained here, and a normal wafer processing process is applied to make a mirror wafer. This mirror wafer was subjected to the same heat treatment as in Example 1, and the X-ray partial anatomy was observed, and the results are described in FIG. 2 (C). From the results, it can be seen that a sliding dislocation of about 15 mm in length occurred from the contact portion with the wafer boat. After performing the same selective etching as in Example 2 and observing the surface of the wafer with an optical microscope, etched holes of sliding dislocations were observed, and it was confirmed that the sliding dislocations had reached the surface of the wafer. Therefore, it can be known from the result of FIG. 2 that if the contact portion between the wafer and the wafer boat is formed by a SF ring field, although a high temperature heat treatment prone to sliding dislocations is performed, sliding dislocations will not occur at all, or At least it can suppress the growth of sliding dislocations. (Example 3, Example 4, Comparative Example 2) The wafers made of the same single crystal sand used in Example 1, Example 2 and Comparative Example 1 were subjected to heat treatment in a horizontal furnace. This heat treatment was performed at the same temperature as in Example 1 at 150 ° C, after 1 hour of argon atmosphere heat treatment, and then applied at 800 ° C, 4 hours (nitrogen atmosphere) + 1000 ° C, 16 hours. !!! .----- f -------- Order --------- line · (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS) A4 specification (210 X 297 mm) -16- 1240020 A7 B7 V. Heat treatment made by imitating device at (14) (dry oxygen atmosphere) ° 1 15 0 ° C, 1 hour argon atmosphere heat treatment The temperature is 9 5 0 ° C, the speed of the boat (please read the precautions on the back, and then fill in this page). The degree is 15 cm / min, the heating speed is 6 ° C / min, and the cooling speed is 3 ° C / mi η was performed, and the heat treatment produced by the imitating device was cooled to 80 ° C after heat treatment at 1000 ° C before being taken out of the furnace. The heat treatment uses quartz crystal boat. The presence or absence of sliding dislocations and the position of the 0 s F-ring region in the heat-treated wafer were confirmed by X-ray local anatomy. No wafer dislocation was observed in the wafer (Example 3) made of the same single crystal silicon as that used in Example 1. Although a wafer (Example 4) made of the same single crystal silicon used in Example 2 had a sliding dislocation of about 4 mm in length from the contact area with the boat, only the same selectivity as in Example 2 was performed. As a result of observing the corrosion with an optical microscope, although there are several uranium etched holes near the contact part with the wafer boat, no etched holes with sliding dislocations were observed from the inner part of the wafer more than 2 mm from the inner part. The SF ring field has the effect of suppressing the growth of sliding dislocations. And in the wafers of Example and Example 4, the FS ring area was formed to a depth of 10 mm from the outer periphery of the wafer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A wafer made of the same monocrystalline silicon used in Comparative Example 1 (Comparative Example 2) had a sliding dislocation of about 20 mm in length from the contact area with the wafer boat. And after performing the same selective etching as in Example 2, the wafer surface was observed by an optical microscope, and the etched holes with sliding dislocations were observed in the portion observed by the X-ray local anatomy. According to the present invention, since the size of the single-crystal silicon wafer used for various heat treatment projects is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) -17- 1240020 A7 B7 V. Description of the invention (15) Circle and heat treatment The sliding position of the contact part of the wafer boat can be easily controlled by a simple method, without increasing processing losses and additional projects. It can provide single crystal silicon wafers with high sliding resistance at low cost, so the industrial price is very high. -------------------- Order --------- Line (Please read the notes on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives -18- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)