TWI239081B - Multi-chip package structure - Google Patents
Multi-chip package structure Download PDFInfo
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- TWI239081B TWI239081B TW092116717A TW92116717A TWI239081B TW I239081 B TWI239081 B TW I239081B TW 092116717 A TW092116717 A TW 092116717A TW 92116717 A TW92116717 A TW 92116717A TW I239081 B TWI239081 B TW I239081B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
12390811239081
【發明所屬之技術領域】 特別有關於一 本發明係有關於一種多晶片封裝構造 種具有晶片承載件之多晶片封裝構造。 【先前技術】 晶片 小化 由於電子產品越來越輕薄短小 以及提供外部電路連接的封裝 ,使得用以保護半導體 構造也同樣需要輕薄短 隨著微小化以及高運作速度需求的增力口,多晶片 2造在許多電子裝置越來越吸引人。多晶片封裝構造可“ 由將兩個或兩個以上之晶片(例如處理器(pr〇ces^r)、曰 圮憶體(memory)以及相關的邏輯單位(1〇gic))組合在單 封裝構造中,來使系統運作速度之限制最小化。此外, 多晶片封裝構造可縮短晶片間銲線路之長度而降低訊號延 遲以及存取時間。 最常見的多晶片封裝構造為並排式^丨化—“ —^^)# 晶片封裝構造,其係將兩個以上之晶片彼此並排地安裝於 一共同基板之主要安裝面。晶片與共同基板上導電線路間 之連接一般係藉由線銲法(wire bonding)達成。然而該並[Technical field to which the invention belongs] More particularly, the present invention relates to a multi-chip package structure and a multi-chip package structure having a wafer carrier. [Previous technology] Chip miniaturization Due to the increasing thinness and shortness of electronic products and the packaging that provides external circuit connections, the protection of semiconductor structures also requires thinness and shortness. With miniaturization and increased demand for high operating speeds, multiple chips 2 Made in many electronic devices is becoming increasingly attractive. A multi-chip package structure can be obtained by combining two or more chips (such as a processor (pr0ces ^ r), memory, and related logic unit (10gic)) in a single package. In the structure, the limitation of the system operating speed is minimized. In addition, the multi-chip package structure can shorten the length of the inter-chip soldering circuit and reduce the signal delay and access time. The most common multi-chip package structure is side-by-side ^ — "— ^^) # The chip package structure is to mount two or more wafers side by side on the main mounting surface of a common substrate. The connection between the chip and the conductive lines on the common substrate is generally achieved by wire bonding. However, it should not
曰曰 排式多晶片封裝構造之缺點為封裝效率太低,因為該共同 基板之面積會隨著晶片數目的增加而增加。 因此,半導體業界發展出堆疊晶片封裝構造10,其^ 般係包含兩個彼此堆疊之晶片1 2、1 4 (如第1圖所示) 該晶片1 2係利用一膠層1 6固著於一基板1 §之上表面。該 片1 2、1 4間設有一膠層2 0。該晶片1 2、1 4係分別利用銲線The disadvantage of the row-type multi-chip package structure is that the packaging efficiency is too low, because the area of the common substrate will increase as the number of chips increases. Therefore, the semiconductor industry has developed a stacked wafer package structure 10, which generally includes two wafers 1 2, 1 4 stacked on top of each other (as shown in FIG. 1). A substrate 1 § the upper surface. There is an adhesive layer 20 between the sheets 1, 2, and 14. The wafers 1, 2, and 4 are each using bonding wires.
00698. ptd 第7頁 123908100698.ptd page 7 1239081
(bonding wire) 22、24電性連接至該基板18上表面之複 數個線接合墊(wire-bonding pad ) 26。該基板18之下表 面設有複數個錫球銲墊28 ,其係電性連接至該基板18之上 表面之複數個線接合墊26。該每一錫球銲墊28設有一錫球 3 0用以與外界電性連接。該晶片1 2、1 4,銲線2 2、2 4以及 邊基板1 8上表面之一部分係被一封裝體32包覆。然而,當 該堆疊晶片封裝構造10之彼此堆疊之晶片具有相同的尺寸 時’上層晶片1 4將阻礙下層晶片1 2的打線作業。 另外’為了增加電子裝置之運作速度及功能,該晶片 14係通f可固定另一晶片34於其上,如第2圖所示。該晶 + 片34係藉由一膠層36固定於該晶片14上,並藉由銲線38電 性連接至該基板18上表面之線接合墊26。然而,應了解 到’當遠堆疊晶片封裝構造1 〇之晶片堆疊數目增加時,用 μ逆接上 度係相對 長及越高 線,及於 象。再者 較高之封 少封裝效 因此 封裝構造 更解決了 題。 層晶片3 4至該 地增加,此將 路徑型態之導 封膠體封裝時 ’越長及越高 膠體厚度,使 率(packaging ’本發明係提 ’其不但增加 多晶片封裝構 線接合墊2 6之銲 提南打線作業之 線,其於打線作 ,越容易造成沖 路徑型態之導線 足以包覆導線及 efficiency) 〇 供了一種具有晶 了多晶片封裝構 造的封裝高度及 線38,其長度及高 困難度。例如,越 業時,越容易斷 線(wire sweep)現 及堆疊晶片,其需 堆疊晶片,因而減 片承載件之多 造内的晶片數量 打線南度限制之 曰曰 片 問(bonding wire) 22, 24 are electrically connected to a plurality of wire-bonding pads 26 on the upper surface of the substrate 18. A plurality of solder ball pads 28 are provided on the lower surface of the substrate 18, which are a plurality of wire bonding pads 26 electrically connected to the upper surface of the substrate 18. Each solder ball pad 28 is provided with a solder ball 30 for electrical connection with the outside. A part of the upper surface of the wafers 1 2, 1 4, the bonding wires 2 2, 2 4 and the side substrate 18 is covered by a package 32. However, when the wafers stacked on each other in the stacked wafer package structure 10 have the same size, the 'upper wafer 14 will hinder the wiring operation of the lower wafer 12'. In addition, in order to increase the operating speed and function of the electronic device, the chip 14 is connected to the other chip 34, as shown in FIG. The wafer 34 is fixed to the wafer 14 by an adhesive layer 36, and is electrically connected to a wire bonding pad 26 on the upper surface of the substrate 18 by a bonding wire 38. However, it should be understood that when the number of wafer stacks of the far-stacked chip package structure 10 increases, the inverse connection with μ is relatively long and higher, and more efficient. In addition, the higher sealing reduces the packaging efficiency, so the package structure solves the problem more. The layer chip 34 is increased to this place. This will increase the length and the thickness of the gel when the conductive seal of the path type is encapsulated, so that the rate (packaging 'the present invention mentions') not only increases the multi-chip packaging wire bonding pad 2 The soldering line of 6 soldering line, which is used for wiring, the more likely it is that the punching path type wire is enough to cover the wire and efficiency) 〇A package height and line 38 with a multi-chip package structure is provided. Length and high difficulty. For example, the more the industry is, the easier it is to wire sweep existing and stacked wafers, which need to be stacked, thus reducing the number of wafer carriers. The number of wafers in the manufacturing line is limited by the southern limit of the wire. Q
12390811239081
【發明内容】 本發明之目的係提供一種 於利用一晶片承載件之複數個 置於其上,因而增加了多晶片 同時解決了多晶片封装之$裝 題0 多晶片封裝構造,其特徵在 承載表面’將複數個晶片設 封裝構造内的晶片數量,並 1¾度及打線高度限制之問 片承ΐ Ϊ本發明t多晶片封裝構造’丨包含-基板、-晶 上,且1呈::f個晶片’該晶片承载件係設於該基板 :有複數個承載表面,用以承載該複數個晶片於 '、,而母一晶片係電性連接至該基板之複數個電路接點 上,以藉由該複數個電路接點而與一外部電路^路接點 根據本發明之多晶片封裝構造,其特徵在於該承載件 係具有複數個承載表面,用以承載複數個 有效達到多晶片封裝之目的。 ^ 為了讓本發明之上述和其他目的、特徵、和優點能更 明顯’下文將配合所附圖示,作詳細說明如下。 【實施方式】 如第3圖所示,其係用以說明根據本發明一實施例之 f晶片封裝構造側面示意圖。圖中係顯示一多晶片封裝構 造100 ’其包含一基板1〇2,其上設置有一晶片承載件 104 ’該晶片承栽件104係具有一底部表面1〇6、一頂部表^^ 面108以及四斜側面110a、110b、ll〇c與110d,如第4圖所 示’其係顯示該晶片承載件1 0 4之頂面示意圖。該承載件 104係藉由該底部表面106而設於該基板之上表面112之[Summary of the Invention] The object of the present invention is to provide a multi-chip package structure that uses a plurality of chip carriers to be placed thereon, thereby increasing the number of multi-chips and simultaneously solving the multi-chip package structure. The surface 'sets a plurality of wafers with the number of wafers in the package structure, and the wafer support is limited by 1¾ degree and the height of the wire. ΪThe multi-chip package structure of the present invention' includes-substrate,-on-chip, and 1 is: Wafers, the wafer carrier is provided on the substrate: there are a plurality of bearing surfaces for carrying the wafers, and the mother wafer is electrically connected to a plurality of circuit contacts on the substrate, and A multi-chip package structure according to the present invention with the plurality of circuit contacts and an external circuit contact is characterized in that the carrier has a plurality of carrier surfaces for carrying a plurality of effectively achieving a multi-chip package. purpose. ^ In order to make the above and other objects, features, and advantages of the present invention more apparent ', the following detailed description will be given with reference to the accompanying drawings. [Embodiment] As shown in FIG. 3, it is a schematic side view for explaining an f-chip package structure according to an embodiment of the present invention. The figure shows a multi-chip package structure 100 'which includes a substrate 102 and a wafer carrier 104 disposed thereon. The wafer carrier 104 has a bottom surface 106 and a top surface ^^ surface 108 And the four oblique sides 110a, 110b, 110c, and 110d, as shown in FIG. 4 ', are schematic diagrams showing the top surface of the wafer carrier 104. The carrier 104 is disposed on the upper surface 112 of the substrate through the bottom surface 106.
1239081 五、發明說明(4) —設置區域107上,且該四斜側表面ii〇a、ii〇b、n〇c與 1 1 〇 d以及該頂部表面1 〇 8上,較佳係各設置有一晶片,其 分別標示為114a、114b、114c、114d與114e,如第3與4圖 所示。 118、該基板102之複數個鍍通線路、該複數個第二電路接 該晶片114a、1 14b、1 14c、1 1 4d與1 14e係各別藉由複 數條銲線11 6而與該基板1 〇 2上之複數個第一電路接點丨j 8 電性連接’而該複數個第一電路接點丨丨8係配置於該設置 區域107之外圍,並且與該基板1〇2之下表面12〇上的複數 個第二電路接點丨2 2各別電性連接。較佳地,該複數個第 一電路接點11 8與該複數個第二電路接點1 2 2間之電性連接| 方式係可藉由該基板1 〇 2之複數個鍍通線路(未顯示)來 完成’且該複數個第二電路接點丨2 2係被用以與一外部電 路(未顯示)電性連接。較佳地,該每一個第二電路接點 122上係形成有一錫球123,並藉由該錫球123而與該外部 電路電性連接。因此,該晶片U4a、1 14b、1 i4c、1 14d與 1 1 4e係藉由該複數條銲線丨丨6 '該複數個第一電路接點 點1 22以及該複數個錫球丨23所形成之電氣路徑而與一外部 電路電性連接。再者,該複數個晶片間係可藉由打線方式 而相互電性連接。 •議 於本發明之另一實施例中,該晶片114a、114b、 114=、U4d與114e係可藉由覆晶(f Hp chip )方式而各 別没置於該四斜側面丨丨〇a、n 〇b、n 〇c、丨丨〇d以及該頂部 表面1 08上’如第4與5圖所示。於此實施例中,該晶片承1239081 V. Description of the invention (4)-set on the area 107, and the four oblique side surfaces ii〇a, ii〇b, no oc and 1 1 〇d, and the top surface 1 08, preferably each setting There is a chip labeled 114a, 114b, 114c, 114d, and 114e, as shown in Figures 3 and 4. 118. The plurality of plated-through lines of the substrate 102 and the plurality of second circuits connected to the wafers 114a, 1 14b, 1 14c, 1 1d, and 1 14e are connected to the substrate through a plurality of bonding wires 11 16 respectively. The plurality of first circuit contacts on 1 〇 丨 8 are electrically connected ', and the plurality of first circuit contacts 丨 8 are arranged on the periphery of the setting area 107 and below the substrate 102 The plurality of second circuit contacts on the surface 120 are electrically connected to each other. Preferably, the electrical connection between the plurality of first circuit contacts 11 8 and the plurality of second circuit contacts 1 2 2 | the method is that a plurality of plated-through lines (not (Shown) to complete 'and the plurality of second circuit contacts 丨 2 2 are used to be electrically connected to an external circuit (not shown). Preferably, a solder ball 123 is formed on each of the second circuit contacts 122 and is electrically connected to the external circuit through the solder ball 123. Therefore, the chips U4a, 1 14b, 1 i4c, 1 14d, and 1 1 4e are connected by the plurality of bonding wires 丨 6 'the plurality of first circuit contacts 1 22 and the plurality of solder balls 23 The formed electrical path is electrically connected to an external circuit. Furthermore, the plurality of chips can be electrically connected to each other by a wire bonding method. • In another embodiment of the present invention, the wafers 114a, 114b, 114 =, U4d, and 114e can be separately placed on the four oblique sides by f Hp chip 丨 丨 a , N ob, n oc, 丨 丨 d, and the top surface 108 are shown in FIGS. 4 and 5. In this embodiment, the wafer support
1239081 五、發明說明(5) ” 載件1 0 4上係具有複數個鍍通線路(未顯示),而該承載 件1 〇4之錢通線路的其中一端係電性連接該等晶片n 4a、 1 14b、114c、1 14d與1 14e之第一錫球結構124,而另一端 係貫穿至該承載件1 〇 4之底部表面丨〇 6,用以電性連接複數 個第二錫球結構1 26 ;另外,該複數個晶片間係可藉由電 性相通於各承載表面間之鍍通孔(未顯示)而相互電性連 接。於此實施例中,該第一電路接點丨丨8係設於該基板丨〇2 之設置區域107上,且該複數個第二錫球結構丨26係與該複 數個第一電路接點11 8電性連接,並藉由該基板1 〇 2之複數 個鍍通線路(未顯示)、該複數個第二電路接點1 2 2以及 ^ 該複數個錫球1 2 3所形成之電氣路徑而與一外部電路連 接0 於第3圖與第5圖之實施例中,該多晶片封裝構造係另 包含一封裝體1 2 8,該封裝體1 2 8係用以包覆該晶片承載件 104、該複數個晶片 1 14a、1 14b、1 14c、114d 與114e、該 複數個第一電路接點118以及該基板1〇2之部分上表面。 根據本發明之多晶片封裝構造,該晶片承載件係可由 一散熱片實現,以改善該多晶片封裝構造之複數個晶片所 產生之熱量問題。該承載件亦可由一基板實現,其中該基 板係可由玻璃纖維強化BT (bismaleimide-triazine)樹1239081 V. Description of the invention (5) The carrier 10 is provided with a plurality of plated-through circuits (not shown), and one end of the money-pass circuit of the carrier 104 is electrically connected to the chips n 4a , 14b, 114c, 114d, and 14e first solder ball structures 124, and the other end is penetrated to the bottom surface of the carrier 104, and is used to electrically connect a plurality of second solder ball structures 124 1 26; In addition, the plurality of wafers can be electrically connected to each other by electrically connecting plated through holes (not shown) between the bearing surfaces. In this embodiment, the first circuit contact 丨 丨The 8 series is disposed on the substrate 107, and the plurality of second solder ball structures 26 are electrically connected to the plurality of first circuit contacts 11 8 through the substrate 1 〇2. The electrical paths formed by the plurality of plated-through lines (not shown), the plurality of second circuit contacts 1 2 2 and ^ the plurality of solder balls 1 2 3 are connected to an external circuit. In the embodiment shown in FIG. 5, the multi-chip package structure further includes a package body 1 2 8. The package body 1 2 8 is used for covering. Wafer carrier 104, the plurality of wafers 114a, 114b, 114c, 114d, and 114e, the plurality of first circuit contacts 118, and a portion of the upper surface of the substrate 102. Multi-chip package structure according to the present invention The wafer carrier can be realized by a heat sink to improve the heat generated by the multiple wafers of the multi-chip package structure. The carrier can also be realized by a substrate, wherein the substrate can be reinforced with glass fiber BT (bismaleimide- triazine) tree
月曰’或FR-4玻璃纖維強化環氧樹脂(fiberglass reinforced epoxy resin)製成。此外,該基板亦可以^^ 由陶瓷基板(ceramic substrate)製成。 根據本發明之一特徵係在於將複數個晶片配置於一具Yue Yue 'or FR-4 fiberglass reinforced epoxy resin. In addition, the substrate can also be made of a ceramic substrate. A feature of the present invention is that a plurality of wafers are arranged in one
00698. ptd 第11頁 1239081 五、發明說明(β) ' ' ' " 有複數個承載表面之晶片承載件上,以達到多晶片封裝之 目的。如第6圖所示,係為根據本發明另一實施例之晶片 承載件之頂面示意圖,該晶片承載件2 0 0係具有一頂表面 210a 以及五斜側表面21〇1)、21〇c、210d、21〇e 與210f,而 該等表面較佳係可承載至少六個晶片於其上。如第7圖所 不,係為根據本發明另一實施例之晶片承載件之頂面示意 圖該曰曰片承載件3 〇 〇係具有一頂表面3 1 〇 a以及六斜側表 面310b 、31〇c 、310d 、310e 、31〇f 與31〇g ,而該等表 佳係可承載至少七個晶片於其上。 又 雖然本發明已以前述實施例揭示,然其並非用以 本發明’任何熟習此技藝者,在不脫離本發明 二w 圍内,當可作各種之更動與修改,因此本發明之保乾 當視後附之申請專利範圍所界定者為準。 ”忒祀圍00698. ptd Page 11 1239081 V. Description of the invention (β) '' '" On a wafer carrier having a plurality of bearing surfaces, to achieve the purpose of multi-chip packaging. As shown in FIG. 6, it is a schematic top view of a wafer carrier according to another embodiment of the present invention. The wafer carrier 200 has a top surface 210a and five oblique side surfaces 2101), 21〇. c, 210d, 21oe, and 210f, and these surfaces are preferably capable of carrying at least six wafers thereon. As shown in FIG. 7, it is a schematic top view of a wafer carrier according to another embodiment of the present invention. The wafer carrier 300 has a top surface 3 1 〇a and six oblique side surfaces 310b, 31. 〇c, 310d, 310e, 310f, and 310g, and these watches can carry at least seven chips on it. Although the present invention has been disclosed in the foregoing embodiment, it is not used in the present invention. Anyone skilled in the art can make various changes and modifications without departing from the scope of the present invention. It shall be subject to the definition in the appended patent application scope. "Xi Siwei
00698. ptd 第12頁 1239081 圖式簡單說明 【圖式簡單說明】 第1圖係為先前技術之一堆疊晶片封裝構造之示意圖。 第2圖係為先前技術之另一堆疊晶片封裝構造之示意圖。 第3圖係為根據本發明一實施例之多晶片封裝構造的側面 示意圖。 第4圖係為第3圖中之晶片承載件的頂面示意圖。 〇 第5圖係為根據本發明另一實施例之多晶片封裝構造的側 面示意圖。 第6圖係為根據本發明其它實施例之晶片承載件之頂面示 意圖。 第7圖係為根據本發明其它實施例之晶片承載件之頂面示 意圖。 圖號說明: 10 堆疊晶片封裝構造 12 晶片 14 晶片 16 膠層 18 基板 20 膠層 22 銲線 _ 00698. ptd 第13頁 123908100698. ptd Page 12 1239081 Brief description of the drawings [Simplified description of the drawings] Figure 1 is a schematic diagram of a stacked chip package structure of one of the prior art. FIG. 2 is a schematic diagram of another stacked chip package structure of the prior art. FIG. 3 is a schematic side view of a multi-chip package structure according to an embodiment of the present invention. Figure 4 is a schematic top view of the wafer carrier in Figure 3. Figure 5 is a schematic side view of a multi-chip package structure according to another embodiment of the present invention. Figure 6 is a schematic top view of a wafer carrier according to another embodiment of the present invention. Fig. 7 is a schematic top view of a wafer carrier according to another embodiment of the present invention. Description of drawing number: 10 stacked chip package structure 12 wafer 14 wafer 16 adhesive layer 18 substrate 20 adhesive layer 22 bonding wire _ 00698. ptd page 13 1239081
圖式簡單說明 24 銲線 26 線接合塾 28 錫球銲墊 30 錫球 32 封裝體 34 晶片 36 膠層 38 銲線 100 多晶片封裝構造 102 基板 104 晶片承載件 106 底部表面 107 設置區域 108 頂部表面 110a 、ll〇b 、 li〇c 、 ii〇d 斜側面 112 上表面 114a 、1 14b、114c、114d 、114e 晶片 116 鲜線 118 電路接點 120 下表面 122 第二電路接點 123 錫球 124 第一錫球結構 126 第二錫球結構 128 封裝體 200 晶片承載件 210a 頂表面 210b 、210c 、 210d 、 210e 、210f 斜側表面 300 晶片承載件 310a 頂表面 310b 、310c 、 310d 、 310e > 310f ^ 31 〇g 斜側表Brief description of the drawing 24 bonding wire 26 wire bonding 塾 28 solder ball pad 30 solder ball 32 package body 34 chip 36 adhesive layer 38 bonding wire 100 multi-chip package structure 102 substrate 104 wafer carrier 106 bottom surface 107 setting area 108 top surface 110a, ll〇b, lioc, ii〇d Beveled side 112 upper surface 114a, 114b, 114c, 114d, 114e chip 116 fresh line 118 circuit contact 120 lower surface 122 second circuit contact 123 solder ball 124 One solder ball structure 126 Second solder ball structure 128 Package 200 Top surface of wafer carrier 210a 210b, 210c, 210d, 210e, 210f Beveled surface 300 Top surface of wafer carrier 310a 310b, 310c, 310d, 310e > 310f ^ 31 〇g slant side table
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