TW457673B - Multi-chip module - Google Patents

Multi-chip module Download PDF

Info

Publication number
TW457673B
TW457673B TW089101234A TW89101234A TW457673B TW 457673 B TW457673 B TW 457673B TW 089101234 A TW089101234 A TW 089101234A TW 89101234 A TW89101234 A TW 89101234A TW 457673 B TW457673 B TW 457673B
Authority
TW
Taiwan
Prior art keywords
substrate
chip
bonding pads
flip
wafer
Prior art date
Application number
TW089101234A
Other languages
Chinese (zh)
Inventor
Su Tao
Kao-Yu Hsu
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW089101234A priority Critical patent/TW457673B/en
Application granted granted Critical
Publication of TW457673B publication Critical patent/TW457673B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Wire Bonding (AREA)

Abstract

A multi-chip module which comprises a first chip configured on the upper surface of a substrate with wire bonding; and a second chip configured on the lower surface of the substrate with flip-chip bonding; in which, the first chip and the second chip are of the same type. The upper surface of the substrate is configured with a plurality of wire-bonding pads for electrical connection with the first chip and the lower surface of the substrate is configured with a plurality of flip-chip bonding pads for electrical connection with the second chip. According to the present invention, because the first and the second chips are both connected to the substrate with upward bond pad relative to the substrate, the address assignment of the bond pads on both semiconductor chips are matched with each other so that the circuit layouts for the upper and the lower surfaces of the substrate can be of similar designs and the plated vias can be used to electrically connect the same circuits on the upper and the lower surfaces of the substrate.

Description

曰 發明說明(1) [發明領域】 本發明係有關於一葙容a g + module,MCM),特別有關 130 / 裝,造(mu出-chip 曰曰 片分別以線接合及覆晶接合 二=,^有一 面。 J乃八°又y、一基板之上下表 【先前技術】 由於電子產品越來越輕薄短小,使得用以 片以及提供外部電路連接的 丰導體曰日 化。 耵瑕構此也冋樣需要輕薄短小 隨者微小化以及高運作速度f求的增加 造在許多電子裝置越來越吸引人“ s κ 4+ :日日片封裝構 從不加々Λ加 及引人多日日片封裝構造可藉由 將兩個或兩個以上之晶片組合在單一封裝構造巾,來使系 統運作速度之限制最小化。&外’多晶片封裝構造可減少 晶片間連接線路之長度而降低訊號延遲以及存取時間。 片封裝構造,其係將兩個以上之晶片彼此並排地安裝^ 共同基板之主要安裝面。晶片與共同基板上導電線路間之 連接一般係藉由線銲法(Wi re bond ing)達成。然而該並排 式多晶片封裝構造之缺點為封裝效率太低,因為該共同基 板之面積會隨著晶片數目的增加而增加。 因此,半導體業界發展出堆疊晶片封裝構造100,其一 般係包含兩個彼此堆疊之晶片11 〇、1 30 (如第一圖所示 )。該晶片110係利用一耀·層112固著於一基板150之上表 面。該晶片11 0、1 3 0間設有一勝層1 3 2。該晶片11 〇、1 3 0 分另”丨】用連接線(bondi ng wi re) 1 1 4、1 34電性連接至該基 ^ 的夕日日片封裝構造為並排式(Side-by-side 事'Description of the invention (1) [Field of the invention] The present invention relates to a capacity ag + module (MCM), and particularly to 130 / equipment, manufacturing (mu 出 -chip, said chip is wire bonding and flip chip bonding respectively == There is one side. J is eight degrees and y, on a substrate. [Previous technology] As electronic products become thinner and thinner, the abundant conductors used for tablets and for providing external circuit connections have become day-to-day. Also, the need for miniaturization of thin, light, small, and high operating speeds is becoming more and more attractive in many electronic devices. "S κ 4+: Japanese-Japanese film packaging structure has never been added and attracted many days. The chip package structure can minimize the system speed limitation by combining two or more wafers in a single package structure. &Amp; Outer 'multi-chip package structure can reduce the length of the connection lines between chips. Reduce signal delay and access time. Chip package structure, which is to install two or more chips side by side on the main mounting surface of the common substrate. The connection between the chip and the conductive lines on the common substrate is generally by wire bonding Wi re bond ing) was achieved. However, the disadvantage of this side-by-side multi-chip package structure is that the packaging efficiency is too low, because the area of the common substrate will increase with the increase in the number of chips. Therefore, the semiconductor industry has developed a stacked chip package structure 100 It generally includes two wafers 110 and 130 stacked on top of each other (as shown in the first figure). The wafer 110 is fixed to the upper surface of a substrate 150 by a glazing layer 112. The wafer 110, There is a winning layer 1 3 2 in the 130 room. The chip 11 0, 1 30 points and other "丨" with a bond wire (bondi ng wi re) 1 1 4, 1 34 is electrically connected to the base Chip package structure is side-by-side

POO-008* ptcPOO-008 * ptc

第4頁 年月日__修正 457673 案號 89101234 五、發明說明(2) 板150上表面之複數個線接合塾(wire-bonding 。 該基板1 5 0之下表面設有複數個錫球銲塾1 5 4,其係電性速 接至該基板150之上表面之複數個線接合墊152。該每一錫 球銲墊1 5 4設有一錫球1 5 6用以與外界電性溝通。該晶片 110、130,連接線114、134以及該基板丨50上表面之一部 分係為一封膠體1 6 0包覆。然而’當該堆疊晶片封裝構造 100之彼此堆疊之晶片具有相同的尺寸時,上層晶片將 阻礙下層晶片11 0的打線作業。此外,用以連接上層晶片 130至基板150線接合墊152之連接線134,其長度及高度相 對地增加,此將提高打線作業之困難度。例如,越長及越 高路徑型態之導線’其於打線作業時,越容易斷線,及於 封膠體封裝時,越容易造成衝線(w i re sweep)現象再 者’越長及越高路徑型態之導線及堆疊晶片,其需較高之 封膠體厚度,使足以包覆導線及堆疊晶片,因而減少封裝 效率(packaging efficiency)。 r:.y ; 如第二圖所示,美國專利第5, 973, 403號揭示另一多/¾、 片堆疊裝置(multichip stacked device),其將一線接合 晶片堆疊於一覆晶接合晶片,該多晶片堆疊裝置包含一第 一半導體晶片210以覆晶方式設於一基板22 0以及一第二半 導體晶片230堆疊於該第一半導體晶片210上並且以線接合 方式電性連接至該基板220。該基板220上表面設有複數個 線接合墊(wire-bonding pad)222以及複數個覆晶接合墊 (flip-chip bonding pad) 224,該基板 220 下表面設有複 數個錫球銲墊226。該第一半導體晶片2 1 0係利用錫鉛連接 (solder joint)接合至基板220上的覆晶接合墊224,該第Page 4 __Amendment 457673 Case No. 89101234 V. Description of the invention (2) A plurality of wire-bonding wires on the upper surface of the board 150. A plurality of solder balls are provided on the lower surface of the substrate 150.塾 1 5 4 is a plurality of wire bonding pads 152 which are electrically connected to the upper surface of the substrate 150. Each solder ball pad 1 5 4 is provided with a solder ball 1 5 6 for electrical communication with the outside world. The wafer 110, 130, the connecting wires 114, 134, and a portion of the upper surface of the substrate 50 are covered with a gel 1 60. However, when the stacked wafer package structure 100, the wafers stacked on each other have the same size At this time, the upper wafer will hinder the wire bonding operation of the lower wafer 110. In addition, the length and height of the connecting wire 134 used to connect the upper wafer 130 to the substrate 150 wire bonding pad 152 will increase relatively, which will increase the difficulty of the wire bonding operation For example, the longer and the higher the path type of the wire is, the easier it is to break the wire during wire bonding operation, and the easier it is to cause wi re sweep phenomenon when sealing the plastic package. High-path type wires and stacked chips, which require Higher encapsulant thickness is sufficient to cover wires and stacked wafers, thereby reducing packaging efficiency. R: .y; As shown in the second figure, US Patent No. 5,973,403 discloses another A multichip stacked device, which stacks a wire-bonded wafer on a flip-chip bonded wafer. The multi-chip stacked device includes a first semiconductor wafer 210 provided on a substrate 220 and a first wafer in a flip-chip manner. Two semiconductor wafers 230 are stacked on the first semiconductor wafer 210 and are electrically connected to the substrate 220 by wire bonding. The upper surface of the substrate 220 is provided with a plurality of wire-bonding pads 222 and a plurality of flip-chips. A flip-chip bonding pad 224 is provided with a plurality of solder ball pads 226 on the lower surface of the substrate 220. The first semiconductor wafer 2 10 is a cover bonded to the substrate 220 by a solder joint. Crystal bonding pad 224, the first

P00-008.ptc 第5頁P00-008.ptc Page 5

4 5 7 8 7 3 索號的 五、發明說明(3) 二半導體晶片2 3 0則是利用複數條銲線連接接合至基板。 上的線接合墊222。由於該下層晶片21〇係利用覆晶接合 方式與基板2 2 0電性連接’因此不受上層晶片23〇之阻礙。 然而,當該半導體晶片21〇、230係為相同型態時’哼 導體晶片21〇、230上晶片銲墊(bond pad)之位址配置千 (address assignment)係彼此互為鏡像(因為半導體晶 片210係以面朝下(指其晶片銲墊相對於基板朝下)的= 式進行覆晶接合)。因此,該複數個線接合墊222之位址 配置(參照第三圖中位址A 1至D7 )係與該複數個覆晶接合 墊2 2 4之位址配置(參照第三圖中位址A, i至D ’ 7 )彼此互 為鏡像(mirror)。因而該基板之電路佈局(circuit 1 ay ouΐ )將相當複雜,並且將大幅增加該基板上導電線路 (未示於第三圖中)之密度與長度。而導電線路越長,其 阻抗(impedance),電感(inductance)及雜訊(n〇ise)越" 大’因而影響最終封裝構造之電性效能。此外,較大 感值使半導體封裝構造消耗較多之電能,且使晶片内 積體電路與導線易感受電源滾涌(p〇wer surges)。再者, 與前述之堆疊晶片封裝構造1 〇 〇相同,用以連接上層晶片 230至基板2 2 0線接合墊222之連接線223,其長度及高度相 對地增加,此將提高打線作業之困難度。如前所述,越長 及越高路徑型態之導線’其於打線作業時,越容易斷線, 及於封膠體封裝時’越容易造成衝線(wire sweep)現象。 越長及越高路徑型態之導線及堆疊晶片,其需較高之封膠 體厚度’使足以包覆導線及堆疊晶片,因而減少封裝效率 (packaging efficiency) 〇4 5 7 8 7 3 Cable number V. Description of the invention (3) The second semiconductor wafer 2 3 0 is connected to the substrate by using a plurality of bonding wires. On the wire bonding pad 222. Since the lower wafer 21o is electrically connected to the substrate 220 using a flip-chip bonding method, it is not hindered by the upper wafer 23o. However, when the semiconductor wafers 21 and 230 are of the same type, the address assignments of the bond pads on the conductor wafers 21 and 230 are mirror images of each other (because of the semiconductor wafers) 210 is a flip-chip bonding method with the face down (referring to the wafer pad facing down on the substrate). Therefore, the address configuration of the plurality of wire bonding pads 222 (refer to addresses A 1 to D7 in the third figure) is the address configuration of the plurality of flip-chip bonding pads 2 2 4 (refer to the address in the third figure) A, i to D'7) are mirrors of each other. Therefore, the circuit layout of the substrate (circuit 1 ay ouΐ) will be quite complicated, and the density and length of the conductive lines (not shown in the third figure) on the substrate will be greatly increased. The longer the conductive line, the greater its impedance, inductance, and noise " large " thus affecting the electrical performance of the final package structure. In addition, the larger inductance value causes the semiconductor package structure to consume more power, and makes the integrated circuits and wires in the chip more susceptible to power surges. In addition, the connection wire 223 for connecting the upper layer chip 230 to the substrate 2 220 wire bonding pad 222 is the same as the aforementioned stacked chip package structure 1000, and its length and height are relatively increased, which will increase the difficulty of wire bonding operation. degree. As mentioned earlier, the longer and higher-path wire type is, the easier it is to break the wire during wire bonding operation, and the more likely it is to cause wire sweep during the encapsulation process. The longer and higher path type wires and stacked wafers, the higher the thickness of the encapsulant needed to cover the wires and stacked wafers, thereby reducing packaging efficiency.

P00-008.ptc 第6頁P00-008.ptc Page 6

457673 广-_案號8910]M4__I 月 g 修正 五、發明說明(5) 兩半導體晶片分別設於一基板之上表面以及下表面,其中 該兩半導體晶片分別以線接合以及覆晶接合的方式與該基 板電性連接,藉此減少多晶片封裝構造之厚度,而提升封 裝效率(packaging efficiency)。 本發明之另一目的係提供一種多晶片封裝構造,其包含 兩半導體晶片分別設於一基板之上表面以及下表面,其中 該兩半導體晶片分別以線接合以及覆晶接合的方式與該基 板電性連接,藉此減少多晶片封裝構造之連接線打線作業 之困難度。 本發明之再一目的係提供一種多晶片封裝構造,其包含 兩半導體晶片分別設於一基板之上表面以及下表面,其中 該兩半導體晶片分別以線接合以及覆晶接合的方式與該基 板電性連接,藉此提升晶片封襞構造之電性效能。 根據本發明較佳實施例之多晶片封裝構造,其主要包含 一第一晶片以線接合(wire bonding)的方式設於一基板之 上表面’以及一第二晶片以覆晶接合的方式設於該基板之 下表面,其中該第一以及第二晶片係為相同型態。該ϋ 上表面設有複數個線接合墊(wire-bonding pad),該基板 下表面設有複數個覆晶接合墊(flip-chip bonding pad) 以及複數個錫球銲墊,該複數個線接合墊以及複數個覆晶 接合墊係電性連接至相對應的錫球銲墊。 由於該第一及第二晶片皆以晶片銲墊相對於基板朝上的 方式接合於基板,因此該兩半導體晶片上晶片銲墊之位址 配置彼此吻合相同《因而基板上表面與下表面之導電線路 電路佈局(circuit layout)可為相似之設計’而以鑛通孔457673 Guang-_Case No. 8910] M4__I month g amendment V. Description of the invention (5) The two semiconductor wafers are respectively arranged on the upper surface and the lower surface of a substrate, wherein the two semiconductor wafers are connected by wire bonding and flip-chip bonding, respectively. The substrates are electrically connected, thereby reducing the thickness of the multi-chip package structure and improving the packaging efficiency. Another object of the present invention is to provide a multi-chip package structure including two semiconductor wafers respectively disposed on an upper surface and a lower surface of a substrate, wherein the two semiconductor wafers are electrically connected to the substrate by wire bonding and flip-chip bonding, respectively. This reduces the difficulty of bonding wires of multi-chip package structures. Another object of the present invention is to provide a multi-chip package structure including two semiconductor wafers respectively disposed on an upper surface and a lower surface of a substrate, wherein the two semiconductor wafers are electrically connected to the substrate by wire bonding and flip-chip bonding, respectively. The semiconductor connection is used to improve the electrical performance of the chip sealing structure. A multi-chip package structure according to a preferred embodiment of the present invention mainly includes a first chip provided on a substrate upper surface by wire bonding and a second chip provided on a flip-chip bonding method. The lower surface of the substrate, wherein the first and second wafers are of the same type. A plurality of wire-bonding pads are provided on the upper surface of the ϋ, a plurality of flip-chip bonding pads and a plurality of solder ball pads are provided on the lower surface of the substrate, and the plurality of wire-bonding pads are provided. The pad and the plurality of flip-chip bonding pads are electrically connected to the corresponding solder ball pads. Since the first and second wafers are bonded to the substrate with the wafer pads facing up, the address configurations of the wafer pads on the two semiconductor wafers coincide with each other. Therefore, the upper and lower surfaces of the substrate are electrically conductive. The circuit layout can be similar to the design.

^〇〇~008.ptc 第8頁 案號 89101234 Λ_Ά 曰 修正 457673 五、發明說明(6) 電性連接該基板上表面與下表面之相同導電線路。 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯’下文特舉本發明較佳實施例,並配合所附圖示,作詳 細說明如下。 【發明說明】 凊參照第四圖,其揭示根據本發明—較佳實施例之多晶 片封裝構造,其主要包含兩半導體晶片2丨〇、23〇分別設在 一基板2 60之上表面以及下表面。該基板26〇上表面設有複 數個線接合墊(wire-bonding pad) 2 6 2 ,該基板下表面設 有複數個覆晶接合墊(flip_chip b〇nding pad)264以及複 數個錫球銲墊2 6 6,該複數個線接合墊262以及複數個覆晶 接合墊2 6 4係經由該基板上的導電線路以及鍍通孔電性連 接至相對應的錫球銲墊266。該基板26〇下表面每一錫球銲 墊26 6設有一錫球268用以與外界電性溝通。該基板26Q可 由玻璃纖維強化BT (bUmaleimide-triazine)樹脂,或 FR-4玻璃纖維強化環氧樹脂(f ibergUss reinf〇rc epoxy resin)製成之蕊層(c〇re layer)形成。此外@基 板260亦了以疋陶瓷基板(ceramic substrate)。該基板 2 6 0之特徵在於只有二層導電電路(分別位於該基板2之 上表面以及下表面),即可達成本發明之多晶片封裝 造〇^ 〇〇 ~ 008.ptc Page 8 Case No. 89101234 Λ_Ά Revision 457673 V. Description of the invention (6) Electrically connect the same conductive lines on the upper surface and the lower surface of the substrate. In order to make the above and other objects, features, and advantages of the present invention more apparent, the preferred embodiments of the present invention will be described in detail below, in conjunction with the accompanying drawings, as follows. [Explanation of the invention] 凊 Referring to the fourth figure, it discloses a multi-chip package structure according to the present invention—a preferred embodiment, which mainly includes two semiconductor wafers 2 and 0, which are respectively disposed on the upper surface and the lower surface of a substrate 2 60. surface. The upper surface of the substrate 26 is provided with a plurality of wire-bonding pads 2 6 2, and the lower surface of the substrate is provided with a plurality of flip-chip bonding pads 264 and a plurality of solder ball pads 2 6 6. The plurality of wire bonding pads 262 and the plurality of flip-chip bonding pads 2 6 4 are electrically connected to the corresponding solder ball bonding pads 266 via conductive lines and plated through holes on the substrate. A solder ball 268 is provided on each solder ball pad 266 on the lower surface of the substrate 26 to communicate with the outside. The substrate 26Q can be formed of a glass fiber reinforced BT (bUmaleimide-triazine) resin or a core layer made of FR-4 glass fiber reinforced epoxy resin (fibergUss reinforc epoxy resin). In addition, @ 基板 260 also has a ceramic substrate. The substrate 260 is characterized by only two layers of conductive circuits (located on the upper surface and the lower surface of the substrate 2 respectively), which can achieve the multi-chip package of the invention.

第9頁 5月再/參照第四圖,根據本發明之製造方法,該半導體晶 片23 0係利用一膠層例如環氧膠固著於基板26〇之上表面。 該半導體晶片230係利用連接線(b〇nding wire) 232電性連 接至·土板260上表面之複數個線接合墊(wire — bondingPage 9 May / Refer to the fourth figure. According to the manufacturing method of the present invention, the semiconductor wafer 230 is fixed on the upper surface of the substrate 26 with an adhesive layer such as an epoxy adhesive. The semiconductor chip 230 is electrically connected to a plurality of wire bonding pads (bonding bonding pads) on the upper surface of the soil plate 260 by using bonding wires 232.

第10頁 .^4576 73 修正 案號 89101234 五、發明說明(8) 斷線及衝線現象,而提高打線作業之良率。此外,較短之 連接線232具有較佳之電性效能,且可減少封膠體厚度, 因而亦提升封裝效率(packaging efficiency)。 而與美國專利第5,801,072號及美國專利第5,973,403號 相比較,當多晶片封裝構造之兩半導體晶片係為相同型 態’而具相同之晶片銲塾(bond pad)之位址配置(address assignment)時’美國專利第5,80 1,072號及美國專利第5, 973,403號之上下半導體晶片之晶片薛塾(b〇nd pad)之位 址配置(address assignment)係彼此互為鏡像,而需相 §複雜之基板導電線路電路佈局,始可將上下半導體晶片 相互電性連接。反觀本發明之設計,兩晶片2丨〇,2 3 〇皆以 晶片銲墊相對於基板260朝上的方式接合於基板26〇 ,因此 忒兩半導體晶片上晶片銲墊之位址配置彼此吻合,因而基 板260上表面與下表面之導電線路電路佈局 表之設計,而以鑛通孔261電性連接該基板 2t)0上表面與下表面之相同導電線路。 雖然本發明已以前述較佳實施例揭 ^ 定本發明,任何熟習此技藝者,在其並非甫以限 範圍内,當可作各種之更動不脫離本發明之精神和 圍當視後附之申請專利範圍所界定者U本發明之保護範 4 5 7 6 73案號89101234 年月曰 修正 圖式簡單說明 【圖示說明】 第1圖:習知堆疊晶片封裝構造之剖面圖; 第2圖:根據美國專利第5 9 734 0 3號之多晶片堆疊裝置 之剖面圖; 第3圖:用於第2圖之多晶片堆疊裝置之基板之上視 圖; 第4圓:根據本發明一較佳實施例之多晶片封裝構造之 剖面圖;及 第5圖:用於第4圖之多晶片封裝構造之基板之上視 圖。 圖號說明 100 堆 疊 晶 片 封裝 構造 110 晶 片 110a 晶 片 銲 墊 112 膠 層 114 連接 線 130 晶 片 130a 晶 片 132 膠 層 134 連 接 線 150 基 板 152 晶 片 連 接 墊 154 錫 球 銲 墊 156 錫 球 210 晶 片 220 基 板 222 線 接 224 覆 晶 接 合 墊 226 錫 球 銲 墊 230 晶 片 260 基 板 262 線接 合 墊 264 覆 晶 接 合 墊 266 錫 球 銲 墊 268 錫 球 270 填 膠 280 封 膠 體 A1 至 D7 位 址 A,1 至D, 7 位 址Page 10. ^ 4576 73 Amendment No. 89101234 V. Description of the invention (8) Disconnection and line punching phenomenon, and improve the yield of line operation. In addition, the shorter connecting line 232 has better electrical performance, and can reduce the thickness of the sealing compound, thereby also improving packaging efficiency. Compared with U.S. Patent No. 5,801,072 and U.S. Patent No. 5,973,403, when two semiconductor wafers of a multi-chip package structure are of the same type, and have the same bond pad address configuration, In the case of 'assignment', the address assignments of wafer pads of the semiconductor wafer wafer pads of the top and bottom semiconductor wafers of U.S. Patent No. 5,80,072 and U.S. Patent No. 5,973,403 are mirror images of each other, However, a complicated circuit layout of the conductive circuit of the substrate is required to electrically connect the upper and lower semiconductor wafers to each other. In contrast to the design of the present invention, the two wafers 2 丨 0, 2 3 0 are bonded to the substrate 26 with the wafer pads facing up to the substrate 260. Therefore, the address configuration of the wafer pads on the two semiconductor wafers coincide with each other. Therefore, the conductive circuit circuit layout table of the upper surface and the lower surface of the substrate 260 is designed, and the same conductive circuits on the upper surface and the lower surface of the substrate are electrically connected with the through holes 261. Although the present invention has been disclosed with the foregoing preferred embodiments, anyone skilled in the art can make various changes without departing from the spirit and scope of the present application within the scope of the present invention. The scope of the patent is defined by the protection scope of the present invention 4 5 7 6 73 case number 89101234, a simple explanation of the revised drawing [illustration] Figure 1: a cross-sectional view of a conventional stacked chip package structure; Figure 2: Sectional view of a multi-wafer stacking device according to US Patent No. 5 9734 0 3; FIG. 3: Top view of a substrate for the multi-wafer stacking device of FIG. 2; Circle 4: A preferred implementation according to the present invention A cross-sectional view of the multi-chip package structure of the example; and FIG. 5: a top view of a substrate used in the multi-chip package structure of FIG. 4. Drawing number description 100 stacked chip package structure 110 wafer 110a wafer pad 112 adhesive layer 114 connection line 130 wafer 130a wafer 132 adhesive layer 134 connection line 150 substrate 152 wafer connection pad 154 solder ball pad 156 solder ball 210 wafer 220 substrate 222 line Connect 224 flip-chip bonding pads 226 solder ball pads 230 wafers 260 substrate 262 wire bonding pads 264 flip-chip bonding pads 266 solder ball pads 268 solder balls 270 filler 280 sealant A1 to D, 7 Address

POO-OOS.ptc 第12頁POO-OOS.ptc Page 12

Claims (1)

457673 ___案號 89101234__年月曰 修正 六、申請專利範圍 1 、一種多晶 封裝構造(multichip module),其係包 含: 〃 一基板’具有一上表面及一下表面’該基板上表面設有 複數個線接合塾(wire-bonding pad) ’該基板下表面設有 複數個覆晶接合塾(f 1 i p - c h i p b ο n d i n g p a d )以及複數個 錫球銲墊,該複數個線接合墊以及複數個覆晶接合墊係彼 此電性連接至相對應的錫球銲墊,其中該複數個線接合墊 之位址配置(address assignment)係與該複數個覆晶接合 墊之位址配置相同; —第一晶片設於該基板之上表面,該第—晶片具有複數 晶片銲墊由複數條連接線電性連接至相對應的複數個線接 合墊;及 一第一晶片以覆晶接合的方式設於該基板之下表面使第 一 aa片之複數個錫船連接與基板下表面之複數個覆晶接合 塾相接合,其中該第一晶片以及第二晶片係為相同型態。 2 、依申請專利範圍第1項之多晶片封裝構造,其_該第 一以及第二晶片大致係相同大小。 3、 依申請專利範圍第1項之多晶片封裝構造,其另包含 複數個錫球設於該基板下表面之複數個錫球銲塾。 4、 一種多晶片封裝構造(mult ich ip module),其係包 含: ’、457673 ___Case No. 89101234__Year Month Amendment VI. Patent application scope 1 A multi-chip package structure (multichip module), which includes: 〃 A substrate 'has an upper surface and a lower surface' The upper surface of the substrate is provided with Plural wire-bonding pads' The bottom surface of the substrate is provided with a plurality of flip-chip bonding pads (f 1 ip-chipb ο ndingpad) and a plurality of solder ball pads, the plurality of wire-bonding pads and the plurality of The flip-chip bonding pads are electrically connected to the corresponding solder ball bonding pads, wherein the address assignments of the plurality of wire bonding pads are the same as those of the flip-chip bonding pads; A wafer is provided on the upper surface of the substrate, and the first wafer has a plurality of wafer bonding pads electrically connected to corresponding wire bonding pads by a plurality of connecting lines; and a first wafer is provided in a flip-chip bonding manner. The lower surface of the substrate is used to join a plurality of tin boat connections of the first aa piece with a plurality of flip-chip bonding pads on the lower surface of the substrate, wherein the first wafer and the second wafer are phase Type. 2. According to the multi-chip package structure of the first patent application scope, the first and second chips are approximately the same size. 3. The multi-chip package structure according to item 1 of the scope of the patent application, which further includes a plurality of solder balls with a plurality of solder balls provided on the lower surface of the substrate. 4. A multi-chip package structure (mult ich ip module), which includes: ’, POO-008.ptc 第13頁 457673POO-008.ptc Page 13 457673 該基板上表面設有 該基板下表面設有. p a d )以及複數個 一基板’具有一上表面及一下表面, 複數個線接合墊(wire-bonding pad), 複數個覆晶接合墊(flip_chip b〇nding 錫球銲墊; ’該第一晶片具有複數 至相對應的複數個線接 一第一晶片設於該基板之上表面 晶片薛塾由複數條連接線電性連接 合墊;及 一,二晶片以覆晶接合的方式設於該基板之下表面,使 第一 aa片之複數個錫紹連接與基板下表面之複數個覆晶接 合墊相接合。 5 、依申請專利範圍第4項之多晶片封裝構造,其中該第 以及第二晶片大致係相同大小。 6 、依申請專利範圍第4項之多晶片封裝構造,其另包含 複數個錫球設於該基板下表面之複數個錫球銲墊。f 7 '依申請專利範圍第4項之多晶片封裝構造,其中至少 該複數個線接合墊其中之一與至少該複數個覆晶接合墊其 中之一係電性連接至相對應的錫球銲墊。 8 、依申請專利範圍第4項之多晶片封裝構造,其中該複 數個線接合墊之位址配置(address assignment)係與該複 數個覆晶接合墊之位址配置相同。The upper surface of the substrate is provided with a pad on the lower surface of the substrate, and a plurality of one substrates have an upper surface and a lower surface, a plurality of wire-bonding pads, a plurality of flip-chip bonding pads (flip_chip b 〇nding solder ball pads; 'the first chip has a plurality of to the corresponding plurality of wires connected to a first chip provided on the top surface of the substrate; the wafer Xue is electrically connected to the bonding pad by a plurality of connecting wires; and one, The two wafers are arranged on the lower surface of the substrate in a flip-chip bonding manner, so that the plurality of tin-shao connections of the first aa chip are bonded to the plurality of flip-chip bonding pads on the lower surface of the substrate. 5. According to item 4 of the scope of patent application The multi-chip package structure, wherein the first and second chips are approximately the same size. 6. The multi-chip package structure according to item 4 of the patent application scope, further comprising a plurality of tin balls and a plurality of tins provided on a lower surface of the substrate. Ball bonding pad. F 7 'According to the multi-chip package structure of claim 4 in the patent application scope, at least one of the plurality of wire bonding pads is electrically connected to at least one of the plurality of flip-chip bonding pads. To the corresponding solder ball bonding pad. 8. The multi-chip package structure according to item 4 of the patent application scope, wherein the address assignment of the plurality of wire bonding pads is the same as the position of the plurality of flip-chip bonding pads. The address configuration is the same. 457 8 73 __案號89101234_年月日 修正__ 六、申請專利範圍 9、一種多晶片封裝構造之製造方法,其包含下列步驟: 提供一基板’具有一上表面及一下表面,該基板上表面設 有複數個線接合墊(wire-bond ing pad),該基板下表面設 有複數個覆晶接合塾(flip-chip bonding pad)以及複數 個錫球銲墊; 將一第一晶片設於該基板之上表面,該第一晶片具有複 數晶片銲墊由複數條連接線電性連接至相對應的複數個線 接合墊;及 將一第二晶片以覆晶接合的方式設於該基板之下表面, 使第二晶片之複數個錫鉛連接與基板下表面之複數個覆晶 接合墊相接合。 1 0、依申请專利範圍第9項之多晶片封裝構造之製造方 法’其中s玄第一'以及第二晶片係係為相同型態。 1 1 、依申睛專利範圍第9項之多晶片封裝構造之製造方尾 法’其另包含複數個錫球設於該基板下表面之複數個錫球 銲墊。 1 2 、依申請專利範圍第9項之多晶片封裳構造之製造方 法,其中至少該複數個線接合墊其中之一與至少該複數個 覆晶接合塾其中之一係電性連接至相對應的踢球銲墊。457 8 73 __Case No. 89101234_Year Month Date Amendment __ VI. Scope of Patent Application 9. A method for manufacturing a multi-chip package structure, which includes the following steps: Provide a substrate having an upper surface and a lower surface, the substrate The upper surface is provided with a plurality of wire-bond ing pads, and the lower surface of the substrate is provided with a plurality of flip-chip bonding pads and a plurality of solder ball pads; On the upper surface of the substrate, the first wafer has a plurality of wafer bonding pads electrically connected to a corresponding plurality of wire bonding pads by a plurality of connecting wires; and a second wafer is provided on the substrate in a flip-chip bonding manner. On the lower surface, a plurality of tin-lead connections on the second wafer are bonded to a plurality of flip-chip bonding pads on the lower surface of the substrate. 10. The method for manufacturing a multi-chip package structure according to item 9 of the scope of the patent application, wherein the first chip and the second chip are of the same type. 1 1. The method for manufacturing a multi-chip package structure according to item 9 of the patent application scope ′ further includes a plurality of solder balls with a plurality of solder balls provided on the lower surface of the substrate. 12. The method for manufacturing a multi-chip package structure according to item 9 of the scope of the patent application, wherein at least one of the plurality of wire bonding pads and at least one of the plurality of flip-chip bondings are electrically connected to correspond to each other. Kick pad. P00-008.ptc 第15頁 457673 案號89101234 年月日 修正P00-008.ptc Page 15 457673 Case No. 89101234 Month / Date Amendment P00*008.ptc 第16頁P00 * 008.ptc Page 16
TW089101234A 2000-01-24 2000-01-24 Multi-chip module TW457673B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW089101234A TW457673B (en) 2000-01-24 2000-01-24 Multi-chip module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW089101234A TW457673B (en) 2000-01-24 2000-01-24 Multi-chip module

Publications (1)

Publication Number Publication Date
TW457673B true TW457673B (en) 2001-10-01

Family

ID=21658593

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089101234A TW457673B (en) 2000-01-24 2000-01-24 Multi-chip module

Country Status (1)

Country Link
TW (1) TW457673B (en)

Similar Documents

Publication Publication Date Title
JP3356821B2 (en) Laminated multi-chip module and manufacturing method
US6462421B1 (en) Multichip module
US6239366B1 (en) Face-to-face multi-chip package
US6531337B1 (en) Method of manufacturing a semiconductor structure having stacked semiconductor devices
TWI278947B (en) A multi-chip package, a semiconductor device used therein and manufacturing method thereof
TWI237354B (en) Stacked package structure
JP4149289B2 (en) Semiconductor device
TWI415201B (en) Multiple chips stack structure and method for fabricating the same
TW557556B (en) Window-type multi-chip semiconductor package
JP2004172157A (en) Semiconductor package and package stack semiconductor device
JP2006093189A5 (en)
US20050287701A1 (en) Leadframe for a multi-chip package and method for manufacturing the same
TWI225291B (en) Multi-chips module and manufacturing method thereof
TWI416700B (en) Chip-stacked package structure and method for manufacturing the same
TWI231983B (en) Multi-chips stacked package
TW200807682A (en) Semiconductor package and method for manufacturing the same
US20020140073A1 (en) Multichip module
US7851899B2 (en) Multi-chip ball grid array package and method of manufacture
TWI409933B (en) Chip stacked package structure and its fabrication method
TW457673B (en) Multi-chip module
KR20090022771A (en) Stack package
KR100447894B1 (en) Dual stacked package for increasing mount density and fabricating method thereof
TWI338927B (en) Multi-chip ball grid array package and method of manufacture
KR102465955B1 (en) Multi-chip stack semiconductor package and method of manufacturing the same
TWI360217B (en) Stacked packaging module and method for manufactur