TWI234285B - Semiconductor component with stress-absorbing semiconductor layer, and associated fabrication method - Google Patents
Semiconductor component with stress-absorbing semiconductor layer, and associated fabrication method Download PDFInfo
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- TWI234285B TWI234285B TW092119074A TW92119074A TWI234285B TW I234285 B TWI234285 B TW I234285B TW 092119074 A TW092119074 A TW 092119074A TW 92119074 A TW92119074 A TW 92119074A TW I234285 B TWI234285 B TW I234285B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000005540 biological transmission Effects 0.000 claims abstract description 20
- 239000012876 carrier material Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 10
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 238000009960 carding Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 103
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 101000912874 Schizosaccharomyces pombe (strain 972 / ATCC 24843) Iron-sensing transcriptional repressor Proteins 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
1234285
敘述 具應力接收器半 本發明係關於具應 造方法,及特別是 場效電晶體。 導體層之半導體組件 力接收器半導體層之 關於具完全空乏區的 及其製造方法 半導體組件及其製 主動區的次百奈米 甚的發展繼續,以改善集成密度的觀點而言 丨的特斂尺寸是期望的。然而,因在半導體 某些限制被達到。在半導體組件的 電洞的情況下’因對在半導體晶體中電子及 而〜j载ί移動性之上限係依半導體晶體的物理性質 踹:、i诸而電荷載體移動性無法被建立或是無法以足夠正 常數且’已知的是“閘極介電體(具高介電 少的電Ϊ i叙其亦為增加集成密度所必需㊅,引起減 〆的%何載體移動性。 斤γ已知的疋具應力接收器半導體層之半導體組件 ^巧的半導體)6被發展’使得其能夠改良在應力接收 裔半導體晶體的電荷載體移動性。 ,1、圖顯示晶體之簡化說明以說明此作用,做為應力接 收器半導體層SA的應力接收或機械負載矽層一般藉由在載 體晶體上形成薄晶體層而被形成,其晶格常數與已在其上 被生長的矽晶體的晶格常數不同。矽鍺(s丨Ge )晶體層常 被用做一般稱的應力產生器層SG,在此情況下,鍺的^量 可被调整且較佳為約2 0 % 。此產生一種矽鍺(s丨Ge )晶體 SG的晶格常數,其較沉積於其上的矽層SA的晶格常數約略 Α0·8〇/ο 0這些不同的晶格常數,特別是對於應力接收器 1234285
修正 二=SA,產生由前頭表示的機械應力,且結果為因在此層 、,阻效應’最終其可能建立更佳的電荷載體移動性。 二達到在半導體電路中改良的絕緣性質及因而減少的漏 /;,L及減少的電容,習慣使用已知的SOI (絕緣體上晶 基材,但以上所敘述技術無法被直接應用於此本質的 第2圖顯不經由絕緣層上矽鍺晶nM〇SFET的簡化區段圖, ,已知,例如由文獻參考T· Tezuka# :”具高移動性矽鍺 1 e )表面通道的新穎完全空乏區的絕緣層上矽鍺晶 P SFET IEEE 200 1。在此情況下,無定形的31〇2層2〇〇形 '於石夕載體基材100,產生典型的s〇I基材。之 =層SG於隨層200的表面上开…在應力產生器層%產 區域包括結晶性矽層且矽鍺(SiGe)層接著生長於其 :土 土機械應力。之I,一種矽層被生長做為應力接收 體層SA,其因不同的晶格常數而受到機械應力且所 加的電荷載體移動性。最I,一種問氧化物層3〇〇 =曰日石夕層400被形成做為控制層,源極及沒極區域3及〇 子形成以連接應力接收器半導體層SA,其形成通道區域 矣。主:?吏用具此種形式的應力接收器半導體層SA之習 “I:組ί ::可能進一步少特徵尺寸,特別是在次百 不木靶圍,或疋進一步改良電子性質。 :斤:明係基於提供具應力接收器半導體層的半導 在方法的目的,其具改良的電子性質即使是 在次百奈米範圍。
1234285 n ---塞J; 92119074 年(厶月 Β__^正 ; 五、發明說明(3) 範圍第1項的特徵達到,及在製造方法方面,此目的可由 申請專利範圍第8項的方法達到。 特別是由使用在載體材料上形成的結晶性應力產生器層 及在其上形成的絕緣應力傳輸層,被產生及傳輸的應力可 於在其上形成的應力接收器半導體層而被吸收至一種程 度,在一方面改良的電荷載體移動性被建立及另一方面改 良的電子性質可在半導體組件上被形成。 應力接收器半導體層較佳為包括一種本質半導體,其厚 度少於通道區域長度的1/3,產生具完全空乏區的半導體 ^,的半導體組件。除了改良的電荷載體移動性,此亦以 簡單結構產生減少的截止電流。 、應力傳輸層較佳為具一種晶格常數,其符合應力接收器 半導體層的第二晶格常數,產生優秀的傳輸性質以用做機 械負載或應力。 、 八而且,以此方式,此為第一次使用具高介電常數的閘極 w電體及使用具金屬閘的控制層於具應力接收層的半導體 組件中’且結果為閘介電體的等效氧化層厚度()可 被減少及優秀的閘驅動性質可被達到。 ,得到優秀的起始表面,具(1〇〇)表面方位的矽基材 及 >儿積於其上的矽緩衝層較佳為被用做載體材料。 ,且,為改善表面品質,應力產生器層亦可藉由分子束 法被平滑化,此產生半導體組件的進—步改良的電
第8頁 五、發明說明(4) 層,矽較佳為被用做應力接收半導體層,二氧化給 =2為;⑽)較佳為 構及優秀的ί 準材料,特別簡單的結 性、等效氧化層厚度等)被得到。 冤仃載體移動 本杳明的進一步有利結構被特徵化於子申 I* f ί :藉由以祕⑽做為具應力接收半導體層的半導 ==:乂實例被敘述於下文。然而,此“^^^^^^^ 半導體、層;U2:'rPM〇SFETS及其他具應力接收 目的。 應丰導體組件以達到改良電荷載體移動性的 “ΐ體:mA圖,一種載體材料1被提供,其包括如 約略晶格符1的或者其亦可使用任何其他結晶性及 姓ίΠ r、σ的載體材料(例如藍寶石等)。 表面方:體材料1可如包括具(_) 材。為達到ί % 此情況下較佳為使用矽基 界面狀離,及為在1Β“Α間的界面埋人 遙晶地沉冑,二 為實例,半導體緩衝層1Β可被 (ΜΒΕ )方法或Mf)r/n ,下矽緩衝層較佳為藉由分子束磊晶 被沉積。特別"曰a 金屬氧化物化學氣相沉積)方法而 滑化為圍Γ:法,此處理步驟產生已被平 _厚度可僅以力:工速度及2情況下’緩衝層 被決定。 屋出)及預先決定的起始品質 做為以上所诚羋- 1234285
案號.921190H 月 曰 修正 五、發明說明(5) 平滑化方法,例如CMP (化學機械拋光)方法。 之後,結晶性應力產生器層SG被形成於載體材料1或半 導體緩衝層1 B的平滑起始表面,此應力產生器層SG的晶體 結構基本上具第一晶格常數以產生於後續所形成的應力接 收半導體層上的機械應力。 做為實例,應力產生器層SG包括I V- I V半導體或11 Ι-V半 導體。然而,亦可包括多層序列及/或藉由分子束磊晶方 法逐漸改變,其必然產生後續層的改良生長性質,特別是 當矽層被用做應力接收半導體層S A,較佳為使用 Sil-xGex做為應力產生器層SG的半導體材料,鍺含量一般 被設定於自10至50% (χ = 0·1-〇·5),此產生在應力產生 器層S G的晶格常數與載體材料些微不同及特別是與後續要 被形成的應力接收半導體層SA些微不同,應力產生器層的 晶格常數因其不符合而於其(最後)原子層偏差如數百分 率(少於10% )。 當進行次百奈米半導體組件時,此應力產生器層SG以i 〇 至3 0 0奈米的典型厚度被形成,較佳為使用M〇CVD (金屬氧 化物化學氣相沉積)方法。以顯著較少厚度後續形成的每 一個晶體層會據以指向相對此頂部層的晶格常數。 僅管在習知彳法中此時應力接收層SA直接在應力產生器 層SG上形成,在根據本發明方法中,應力傳輸層2,其傳 輸已被產生的機械應力及亦具絕緣性質,現在被產生。 因熱形成的或沉積的絕緣體層’如氧化物層,具無定形 的結構,它們原則上不適合用做應力傳輸層。相反地,具 預先決定晶體、结構的結晶性絕緣體層能夠傳送此種本質的
IMS 第10頁 1234285 修正 曰 一· 案號 92119074 五、發明說明(6) Ϊ : f力、:此應力已在應力產生器層SG產生及送至下方的 :妾收半導體層SA。此種形式的已知結晶性絕緣體層之 、:包括CdF2、氟化鈣(CaF2 )及其他類似物。 =使用由矽,特別是氧化鈣(CaF2)所組成的應力接收 =體層具特別佳的性質,目氟化鈣(CaF2 ) #晶格常數 ⑽吊,好地符合於(例如非常類似)矽的晶格常數(於室 Ρ下氟化鈣(CaF2 )的晶格常數=〇· 546奈米,矽的晶格常 = 0.543 ^米)。而且,氟化鈣(CaF2 )構成所有現存材 料間具最咼能隙(價電帶至導電帶=丨2電子伏特)的電絕 緣體。因為此非常大的能隙(12電子伏特),當使用氟化 耗(CaF2 )時’足以在應力產生器層SG的表面形成僅少數 原子層。因此’較佳為約i至2奈米厚氟化鈣(CaF2 )應力 傳輸層2藉由如原子層沉積方法(ALCVD,原子層化學氣相 沉積)或是MBE方法被沉積做為經埋藏的絕緣體。 之後’實際應力接收半導體層SA於絕緣應力傳輸層2的 表面形成’且矽半導體層較佳為被形成做為半導體組件的 主動區域,如通道區域K。特別是當製造次百奈米半導體 組件時,在此情況下場效電晶體可如具丨5奈米的通道長 度’在此情況下具厚度d少於1/3通道長度l的本質半導體 材料,亦即本質矽,被沉積。據此,對通道長度L =丨5奈 米,約d = 5奈米的本質半導體材料由ALCVD或MOCVD或MBE方 法被沉積,產生具完全空乏區的主動區域的半導體組件或 半導體本體(完全空乏區的本體)。 在此情況下,絕緣應力傳輸層2負責確保此應力的或應 力接收半導體層SA的可靠及完全空乏區,且結果為除了經
第11頁 1234285 修正 ........... 案 5虎 92119074 五、發明說明(7) __ 載體移動性,完全空乏區的半導體組件的所有 而且,在氣化㉟(GaF2)切以其晶 子^及’ m情況下,在應力產生器層SG所產生的:以j 應=乎沒有損失地傳送至應力接收半導體層SAn負何或 半導二=,圖,閘極介電體3及控制層4於應力接收 ”體層SA的表面上形成。閘極 接收 極介電體’例如四氮化三石夕、二氧切、= 他新的高k介電體等,然而控制層4可以相同 】或” 極材料組成,例如經摻雜的多晶矽或金屬。&由备知間 然而’較佳為使用具高介電當人、 高k介電體做為閘極介電體 、甲° ;丨.體或已知為 AL_〇CVD方法以典型3奈 错由 (_)、HfSix0y、Hfs⑽等。因這些=乳= 介電體的晶格常數的顯著不#人 - ’、P甲1極 SA的低沉㈣二及因應力接收半導體層 M认,日/ ,儿積方法以無定形的形式進行。 、關於閘極材料或控制層4,已知為令間 被沉積做為閘極材料,特別是當 ’辨’、;" 乏區是所欲的。此本質的材:;:4動亡導體本體的完全空 3的高k材料間的交互作用 J二影:與閘極介電體 (金合)閘極材料之情況下;用2上所述的 氮化鈦(TiN),做為控制層4。 4使用金屬閑極,例如 源ί = 控制層4及閘極介請被圖樣化且 你往及及極£域s及D皆於應力接收 完成場效電晶體。在形成間^ ^ « A被形成以 —^~^成間隔物_接觸孔、連接區域,等 第12頁 Ϊ234285
所涉及的進 述。 一步步驟對應於先前 技藝 且所以不於下文敘 力接收丰U簡單及丨昂責方法製造特別是經應力或應 導體組件為可^及/或以完全空乏區操作的半導體層之半 體組件的雷I# ’且結果為特別是截止電流被減少且半導 以相何載體移動性及因而時脈速度被改良。 以減少望4 f,特別是當使用具高介電常數的閘極介電體 可被改& ^氧化層厚度(Ε〇Τ )為可行,其結果為此驅動 良且特別是減少的電壓可被產生。 :^ ’絕緣應力傳輸層減少已知的貫穿效應及特別是能 =地減少離線漏電流。然@ ’特別是相對應層結構現在 亦被,供用於次百奈米半導體組件,允許僅具在電子性質 的少量偏差及具足夠的再生性的半導體組件可被製造。 本發明已以nMOSFET為基礎敘述於上,然而,此不受限 於此特別應用及以相同方式亦包括pUOSFET或其他具應力 接收半導體層的半導體組件。而且,本發明已以由矽組成 的應力接收半導體層及由氟化鈣(CaF2 )組成的應力傳輸 層為基礎敘述於上。然而,以相同方式亦可使用替代材料 以製造這些層。
1234285 _案號92119074 年、>月 日 修正_,_____________________ 圖式簡單說明 第1圖顯示一種晶體的簡化說明其顯示在應力接收半導體 層的顯著作用。 第2圖顯示一種具應力接收半導體層的習知半導體組件的 簡化區段視圖。 第3A及3B圖顯示簡化區段視圖其說明在根據本發明具應力 接收半導體層的半導體組件的製造所涉及的方法步驟。 元件符號說明: 1、1 0 0載體材料 1A半導體基材
1B半導體基材 2 0 0絕緣體層 SG應力產生器層 2應力傳輸層 S A應力接收半導體層 3、3 0 0閘極介電體 4、4 0 0控制層 K通道區域 S源極 D汲極 L通道長度 d厚度
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Claims (1)
1234285 修正
案號 92119074 六、申請專利範圍 1· 一種半導體組件,其包括一種應力接收半導體層, 具: 玲、 一載體材料(1 ); 一結晶性應力產生器層(SG )其形成於該載體材料(工 上且貫負上具一第一晶袼常數,以產生一機械應力; 一絕緣應力傳輸層(2 ),其形成於該應力產生器廣 (SG )上且被使用以傳輸已產生的該機械應力;玲 一結晶性、應力接收半導體層(SA ),其形成於該應 輸層(2)及具一第二晶格常數,其與第一晶格常數不 同,以吸收已被產生及傳送的該機械應力及以 汲極區域(S、D)及一通道區域(κ) ; I兄源極及 一閘極介電體(3),其至少形成在該通道區域(£)的 面;及 I =制層u)以驅動該通道區域(κ),其係 電體(3 )上形成。 j μ ;| 專利範圍第1項的半導體組件,其中該應力接 收半導體層(SA) *一厚度⑷少於1/3該通道區域 (K)的長度(L)。 2據二請Λ利範圍第2項的半導體組件,其中該應力傳 輸層c 2 )形成一結晶性絕緣體層。 4·根據申請專利範圍第3項的半導體組件,其 輸層(2)具一種晶格常數,其符合該 ^ ^導 (SA)的該第二晶格常數。 換收丰導體層 5.根據申請專利範圍第i項的半導體組件,其令該應力傳
第15頁 1234285 案號 92119074
六、申請專利範圍 輸層(2 )形成一結晶性絕緣體層。 6·根據申請專利範圍第5項的半導體組件,其令該靡 輸層(2 )具一種晶格常數,其符合該應力接收半^ ^ (SA )的該第二晶袼常數。 增 7 ·根據申請專利範圍第1至6項中任一項的半導體组 中该應力產生器層(SG)為一約1〇至3〇〇奈米厚产 一 (SiGe)層,該應力傳輸層(2)為一約1至2 p严/ 氟化鈣(CaF2 )層,及 ,…卡尽度的 該應力接收半導體層(SA)為—約5奈米厚度㈣^ 8·根射請專利範圍第1至6項中任—項的半導曰 中該閘極介電體(3)具高介電常數。 體、、且件, 9·根據申請專利範圍第丨至6項中任一 中該控制層(4)包括-種金項/任帛的+導體組件, 10·根據申請專利範圍第i至6項中任一 其中該載體材料(1 )包括 、、+導體組件 :具-(100)表面方位的矽基材(1A); 及 一種石夕緩衝層(1B)以產峰 滑起始表面。 產生該應力產生器層(SG)的一 11. 一種製造具應力接收半I 法,其包括步驟:千導體層的-+導體組件之方 a )形成一載體材料(1 ) ·, b)於4载體材料(丨)上形 呈一 -結晶性應力產生器層(SG t吝/、:第-晶格常數的 )以產生一機械應力; 其 其 平
1234285 ^ ---- 案號的119074 —__一 曰 你 π:__. 六、申請專利範圍 c )於該應力產生器層(SG )上形成—絕緣應力傳輸層 (2 )以傳輸已被產生的該機械應力; d )於該應力傳輸層(2 )上形成一種具一第二晶格常數的 結晶性、應力接收半導體層(SA ),以進行吸收該機械應 力的目的,其中該第二晶格常數與第一晶格常數不同; e )於該應力接收半導體層(SA )上形成一閘極介電體 (3 ); ()在該閘極介電體(3 )上形成一控制層(4 ); g )圖樣化該閘極介電體(3 )及該控制層(4 );及 h )於該應力接收半導體層(SA )形成源極及汲極區域 (S、D ) 〇 1 2 ·根據申請專利範圍第11項的方法,其中在步驟a )中, 係提供具一(1〇〇)表面方位的一半導體基材(1A),及 一半導體緩衝層(1 B )被磊晶地沉積於其上以產生一平滑 表面。 1 3 ·根據申凊專利範圍第1 2項的方法,其中在步驟b )中, 係使用一IV-IV或III-V半導體。 14·根據申δ月專利範圍第13項的方法,其中在步驟乜)中, 一多重層序列被形成做為應力產生器層(SG )。 1 5 ·根據申請專利範圍第11項的方法,其中在步驟b )中, 係使用一IV - IV或in— v半導體。 1 6.根據申請專利範圍第1 5項的方法,其中在步驟b )中, 一多重層序列被形成做為應力產生器層(SG )。 1 7 ·根據申請專利範圍第丨丨至丨6項中任一項的方法,其中
第17頁 1234285 _ 案號92119074 年U月 日 修正_ 六、申請專利範圍 在步驟b),該應力產生器層(SG)係藉由一分子束磊晶 方法被平滑化。 1 8 ,根據申請專利範圍第1 1至1 6項中任一項的方法,其中 _在步驟c),一結晶性絕緣體層被形成做為應力傳輸層 (2) 〇 1 9 .根據申請專利範圍第1 1至1 6項的方法,其中在步驟 c),具一符合該應力接收半導體層(SA)的該第二晶格 常數的晶格常數之應力傳輸層(2)被形成。 2 0 .根據申請專利範圍第1 1至1 6項的方法,其中在步驟 c),僅該應力傳輸層的少數原子層被磊晶地沉積於該應 力產生器層(SG)。 2 1.根據申請專利範圍第1 1至1 6項中任一項的方法,其中 在步驟d),一種完全空乏區的半導體材料係被使用。 2 2 .根據申請專利範圍第1 1至1 6項中任一項的方法,其中 在步驟e),一具一高介電常數的材料係被用做閘極介電 體(3) 〇 2 3.根據申請專利範圍第11至16項中任一項的方法,其中 在步驟f),一金屬係被用做控制層(4)。 2 4.根據申請專利範圍第11至1 6項中任一項的方法,其中 -在步驟a)矽被用做載體材料(1); -在步驟b)矽鍺(SiGe)被用做應力產生器層(SG); 在步驟c)氟化鈣(CaF2)被用做應力傳輸層(2); 在步驟d)矽被用做應力接收半導體層(SA); 在步驟e)二氧化铪(H f 0 2)被用做閘極介電體(3 );及
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TW200709410A (en) * | 2005-07-15 | 2007-03-01 | Mears R J Llc | Semiconductor device including a strained superlattice layer above a stress layer and associated methods |
US8389300B2 (en) * | 2010-04-02 | 2013-03-05 | Centre National De La Recherche Scientifique | Controlling ferroelectricity in dielectric films by process induced uniaxial strain |
US9793243B2 (en) | 2014-08-13 | 2017-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer layer(s) on a stacked structure having a via |
US9768254B2 (en) | 2015-07-30 | 2017-09-19 | International Business Machines Corporation | Leakage-free implantation-free ETSOI transistors |
FR3064398B1 (fr) * | 2017-03-21 | 2019-06-07 | Soitec | Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure |
CN108821231B (zh) * | 2018-06-26 | 2019-08-09 | 清华大学 | 一种基于力学原理的表面具有微结构的高弹性基体及方法 |
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US5232862A (en) | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Heteroepitaxial layers with low defect density and arbitrary network parameter |
US5453399A (en) | 1993-10-06 | 1995-09-26 | Texas Instruments Incorporated | Method of making semiconductor-on-insulator structure |
JPH11233440A (ja) | 1998-02-13 | 1999-08-27 | Toshiba Corp | 半導体装置 |
CN1319252A (zh) | 1998-09-25 | 2001-10-24 | 旭化成株式会社 | 半导体衬底及其制造方法、和使用它的半导体器件及其制造方法 |
KR100429869B1 (ko) * | 2000-01-07 | 2004-05-03 | 삼성전자주식회사 | 매몰 실리콘 저머늄층을 갖는 cmos 집적회로 소자 및기판과 그의 제조방법 |
KR100385857B1 (ko) * | 2000-12-27 | 2003-06-02 | 한국전자통신연구원 | SiGe MODFET 소자 제조방법 |
US6475857B1 (en) * | 2001-06-21 | 2002-11-05 | Samsung Electronics Co., Ltd. | Method of making a scalable two transistor memory device |
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2002
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- 2003-07-11 TW TW092119074A patent/TWI234285B/zh not_active IP Right Cessation
- 2003-07-11 US US10/521,498 patent/US7642544B2/en not_active Expired - Fee Related
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CN100380589C (zh) | 2008-04-09 |
EP1522092A2 (de) | 2005-04-13 |
US7642544B2 (en) | 2010-01-05 |
CN1669123A (zh) | 2005-09-14 |
US8198681B2 (en) | 2012-06-12 |
WO2004010485A3 (de) | 2004-05-06 |
US20100084691A1 (en) | 2010-04-08 |
DE10231964A1 (de) | 2004-02-19 |
WO2004010485A2 (de) | 2004-01-29 |
EP1522092B1 (de) | 2011-08-31 |
US20060118867A1 (en) | 2006-06-08 |
TW200403775A (en) | 2004-03-01 |
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