TWI231549B - Chemical bath - Google Patents
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- TWI231549B TWI231549B TW91121686A TW91121686A TWI231549B TW I231549 B TWI231549 B TW I231549B TW 91121686 A TW91121686 A TW 91121686A TW 91121686 A TW91121686 A TW 91121686A TW I231549 B TWI231549 B TW I231549B
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1231549 A7 ------— B7 五、發明説明（） 發明領域： 本發明係有關於一種彳· 4里1G子槽裝置（chemical Bath)，特 別是有關於一種具有溢、;* m (請先閲讀背面之注意事項再填寫本頁) $ &机（0verfl〇w)功能之化學槽裝置， 藉由溢流作用可稀釋處进# & > ^ 处理槽内之微粒濃度，達到降低微粒 污染的目的。 發明背景： 、 hi在進行曰曰圓之濕钕刻（Wet Etching)或清洗等濕 式處理時，通常係將晶圓浸入一化學槽之處理液中一段時 間，再將此晶圓取出。然後，將下一批晶圓浸入此化學槽 中之相同處理液中，進行處理。如此一直持續，直至處理 液之預設換液時間為止，而先將處理液排放至廢液槽中， 再於化學槽中置入新的處理液。 然而’晶圓浸在化學槽之處理液中進行處理時，一些 微粒以及副產物會殘留在處理液中。因此，處理液經過一 段時間的使用後’殘留於處理液中之微粒濃度以及副產物 濃度將大為提升。於是，當微粒濃度以及副產物濃度持續 攀升的情況下，浸入此處理液之晶圓，就會造受到微粒與 反應副產物相當嚴重的污染，而導致製程可靠度與產品良 率的下降。 經濟部智慧財產局員工消費合作社印製 上述之情況在氮化矽（Silicon Nitride ; Si3N4)的濕蝕刻 製程中’更加明顯。此乃是由於氮化石夕係在熱磷酸（Η 3 P 〇 4 ) 中進行，而此熱磷酸繼續在後續之製程中使用。因此，氮 化矽蝕刻所形成之副產物二氧化矽（Silicon Dioxide ; Si〇2) 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)1231549 A7 -------- B7 V. Description of the invention () Field of the invention: The present invention relates to a 4G 1G sub-tank device (chemical bath), and in particular to a Please read the precautions on the back before filling this page) $ & machine (0verfl0w) chemical tank device, which can be diluted by overflow effect # & > ^ The concentration of particles in the processing tank to achieve The purpose of reducing particulate pollution. Background of the Invention: When performing wet processing such as wet neodymium engraving (Wet Etching) or cleaning, the wafer is usually immersed in a chemical bath for a period of time, and then the wafer is taken out. Then, the next batch of wafers is immersed in the same processing solution in this chemical tank for processing. This is continued until the preset liquid exchange time of the processing liquid, and the processing liquid is first discharged into the waste liquid tank, and then a new processing liquid is placed in the chemical tank. However, when the wafer is immersed in the processing solution of the chemical tank, some particles and by-products remain in the processing solution. Therefore, after a period of use of the treatment liquid, the concentration of particles and by-products remaining in the treatment liquid will be greatly increased. Therefore, when the concentration of particles and by-products continue to rise, wafers immersed in this processing solution will be seriously polluted by particles and reaction by-products, resulting in a decrease in process reliability and product yield. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs The above situation is more obvious in the wet etching process of silicon nitride (Silicon Nitride; Si3N4). This is because the nitride is carried out in hot phosphoric acid (Η 3 P 〇 4), and this hot phosphoric acid continues to be used in subsequent processes. Therefore, by-product silicon dioxide (Silicon Dioxide; Si〇2) formed by silicon nitride etching This paper size applies to China National Standard (CNS) A4 (210X297 mm)
五、 ^31549 發明説明（） 的濃度將急遽上升。當ϋ刻劑中之二氧化⑪的濃度超過飽 和後，蚀刻劑中之二氧切會產生沉殿，而造成晶圓的污 染，進而導致製程可靠度的下降。 目刖，為了克服微粒與副產物污染晶圓的問題，而發 展出一種具有過濾迴路之化學槽。這種化學槽係將利用過 濾迴路之過濾器將化學槽之處理液中所殘留的微粒以及反 應副產物等污染物加以過濾，來達到降低化學槽之處理液 中的污染物數量。然而，處理液中的污染物常會將過濾器 堵塞住，而降低過濾器的效能❶如此一來，不但對過遽迴 路之流量造成影響，更常常需因過濾器的失效而停止製程 之進行來更換過濾器，而增加製程的繁瑣與複雜度。而且， 過濾器的經常汰換，亦會大幅增加製程成本的負擔。 發明目的及概述： 鑒於上述之發明背景中，習知化學槽内的溶液在經過 一段時間的使用後，溶液中之微粒與副產物濃度變得相當 高。由於溶液中的微粒與副產物的濃度相當高，於是後續 浸入化學槽之溶液中以進行清洗之晶圓會受到嚴重的微粒 以及副產物的污染，而導致製程可靠度與產品良率下降。 因此，本發明的主要目的之一就是在提供一種化學槽 裝置，具有内槽與外槽之設計，而可使置於内槽之處理槽 中的溶液，例如#刻劑，溢流到内槽與外槽之間的溝槽中 而排放至廢液槽中。因此，藉由處理槽内之溶液的溢流， 可同時將處理槽内之部分微粒以及副產物排出，而減少處 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ..........…#.........、可.........線·— (請先閲讀背面之注意事項再填寫本頁) 緩濟部智慧財產局員工消費合作社印製 1231549 A7 B7 五、發明説明（） 理槽内之微粒量與副產物含量。 本發明之另一目的就是因為本發明之化學槽裝置可藉 由溢流的方式，排掉處理槽内之部分溶液，並同時隨著戶斤 排出之溶液而將處理槽内之微粒的一部分以及與副產物的 一部分帶走。如此一來，可減少處理槽内之微粒量與副產 物的含量。於是’當於處理槽中添加新鮮之溶液後，可有 效稀釋處理槽内之微粒以及副產物的濃度。因此，可大中3 減低晶圓之微粒污染，進而提高製程可靠度與產品良率。 本發明之另一目的就是藉由化學槽内之蝕刻劑的有效 溢流，可降低微粒與副產物的濃度。因此，可增加批μ w 〃對ϋ刻 劑濃度的控制，進而提升製程的可靠度。 本發明之另一目的就是可線上溢流處理槽内> & w 3 <蚀刻 因此可延長處理槽之蝕刻劑的更換週期，進而广& 〃間4匕製 劑 程 f請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本發明之再一目的就是因為本發明可利用、、益 4心流的方 而在進行晶圓蝕刻期間，順利地更換處理槽内 名虫刻 劑的一部分，並藉以降低處理槽内之微粒的數量。m至 因此， 本發明之化學槽裝置在應用上相當簡單方便，且开+ ^ J噌下購 置過濾器所需之高額費用。 根據以上所述之目的，本發明更提供了 一種彳 @ %學槽裝 置，至少包括：一外槽；一内槽位於上述之外槽内， Μ ，其中 上述之外槽之一内壁與内槽之一外壁間相隔—預& 離，而在外槽與内槽之間形成一溝槽；一處理槽朽 g oil於卜述 式 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1231549V. ^ 31549 Invention Description () The concentration of () will rise sharply. When the concentration of hafnium dioxide in the etchant exceeds saturation, the two oxygen cuts in the etchant will cause sinking, which will cause contamination of the wafer, resulting in a reduction in process reliability. At present, in order to overcome the problem of contamination of wafers by particles and by-products, a chemical tank with a filtering circuit was developed. This chemical tank will use the filter of the filter circuit to filter the particles remaining in the processing solution of the chemical tank and the pollutants such as reaction by-products to reduce the amount of pollutants in the processing solution of the chemical tank. However, the pollutants in the treatment solution often block the filter and reduce the efficiency of the filter. This not only affects the flow rate of the circuit, but also often stops the process due to the failure of the filter. Replace the filter and increase the complexity and complexity of the process. Moreover, the frequent replacement of filters will also greatly increase the burden of process costs. Object and summary of the invention: In view of the above background of the invention, after the solution in the conventional chemical tank is used for a period of time, the concentration of particles and by-products in the solution becomes quite high. Due to the relatively high concentrations of particles and by-products in the solution, subsequent wafers immersed in the solution of the chemical tank for cleaning will be seriously contaminated by the particles and by-products, resulting in decreased process reliability and product yield. Therefore, one of the main objects of the present invention is to provide a chemical tank device with the design of an inner tank and an outer tank, so that the solution placed in the processing tank of the inner tank, such as # 刻 剂, overflows to the inner tank. And the outer tank to the waste liquid tank. Therefore, by the overflow of the solution in the processing tank, some particles and by-products in the processing tank can be discharged at the same time, and the paper size can be reduced to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) ... .......… # ......... 、 may ......... line · — (Please read the precautions on the back before filling in this page) Printed by the Bureau's Consumer Cooperatives 1231549 A7 B7 V. Description of the invention () The amount of particulates and by-products in the tank. Another object of the present invention is that the chemical tank device of the present invention can discharge a part of the solution in the processing tank by overflow, and at the same time, a part of the particles in the processing tank and Take away with part of the by-products. In this way, the amount of particles and the content of by-products in the processing tank can be reduced. Therefore, when fresh solution is added to the processing tank, the concentration of particles and by-products in the processing tank can be effectively diluted. Therefore, it is possible to reduce the particle contamination of wafers in large and medium 3, thereby improving process reliability and product yield. Another object of the present invention is to reduce the concentration of particles and by-products by the effective overflow of the etchant in the chemical tank. Therefore, it is possible to increase the control of the concentration of the etchant in the batch μ w 〃, thereby improving the reliability of the process. Another object of the present invention is to allow the > & w 3 < etching in the on-line overflow treatment tank to prolong the exchange period of the etchant in the treatment tank. Please pay attention to this page and fill in this page.) Order the printing of the present invention by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Another purpose of the present invention is to smoothly replace the wafer during the etching process because the present invention can be used. Part of the famous insect repellent in the processing tank, thereby reducing the number of particles in the processing tank. Therefore, the chemical tank device of the present invention is relatively simple and convenient in application, and the high cost required to purchase a filter is required. According to the above-mentioned object, the present invention further provides a 彳 @% 学 槽 device, which at least includes: an outer tank; an inner tank is located in the outer tank, M, wherein one of the outer wall and the inner tank of the outer tank; One is separated from the outer wall—pre- & separated, and a groove is formed between the outer groove and the inner groove; a processing groove is used in a narrative format. ) 1231549
五、發明説明( 之内槽 理槽係 控制器 的體積 述之外 係用以 數個排 落。 其 位於上 液順利 此 部結構 結構與 經耳部 外壁而 中：其中内槽係用以固定並支持此處理槽，且此處 用以儲放一溶液，此溶液可例如為蝕刻劑；-液面 位於上述之處理槽上方，藉以控制處理槽内之溶液 ，一自動喷灑系統（Automatic Spray System)位於上 槽之内壁上且位於溝槽之上部，且此自動喷灑系統 噴射另一溶液，例如去離子水（DI Wate〇 ;以及複 放孔（Drain Hole)位於上述之溝槽之一底部的角 中，本發明之化學槽裝置更至少包括楔型導流結構 述之溝槽的底部，因此可將處理槽内溢流而下之溶 地導引至溝槽底部之角落的排放孔而排出。 外’化學槽裝置之處理槽之槽壁的開口端更具有耳 ’以利提取處理槽。而内槽之槽壁上端更具有楔型 處理槽之耳部結構的底部接合，藉以將處理槽溢流 結構底部之溶液導引至内槽之外壁並順著内槽之 流下。 制 控 器 時 定 由 藉 以 粒 微 的 壁 外 之 槽 内 與 壁 内 之 槽 外 於 。 附掉 外沾刷 另將沖 時等 定物 可產 ， 副 間及 時 射 喷 之 統 系 灑 喷 經濟部智慧財產局員工消費合作杜印製 移晶 期低 定降 上可 線了 , 除 式， 方此 的因 流 。 溢物 由產 藉副 可及 置以 裝粒 槽微 學之 化分 之部 明内 發槽 本理 處 除 高 提 染 污 物内 產槽 副理 與處 粒對 微加 之增 圓可 可 程 制 控 的 度 濃 液 溶 之 更效 ， 程 率製 良升 品提 產而 與進 度， 靠 (請先閲讀背面之注意事項再填、寫本頁}V. Description of the invention (The inner groove of the controller is used for several rows outside the volume of the controller. It is located in the upper part of the liquid structure and the outer wall of the ear: the inner groove is used for fixing It supports this processing tank, and it is used to store a solution. This solution can be, for example, an etchant;-the liquid level is located above the processing tank to control the solution in the processing tank, an automatic spray system (Automatic Spray System) System) is located on the inner wall of the upper tank and above the groove, and the automatic spraying system sprays another solution, such as deionized water (DI Wate); and the drain hole is located in one of the above grooves In the corner of the bottom, the chemical tank device of the present invention further includes at least the bottom of the groove described by the wedge-shaped guide structure, so that the overflow in the processing tank can be guided to the drain hole at the corner of the bottom of the groove. It is discharged. The open end of the tank wall of the outer chemical tank device has ears to facilitate the extraction of the processing tank. The upper end of the inner wall of the tank has a wedge-shaped processing tank with the bottom of the ear structure. deal with The solution at the bottom of the overflow structure is guided to the outer wall of the inner tank and flows down along the inner tank. The controller is controlled by the inner wall of the tank and the outer wall of the tank. The time-determined fixed product can be produced, and the system of deputy and timely injection is the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs. The printing and crystallizing period of the low-determined period can be lowered. The spill is controlled by the production and deputy, which can be placed with the micro-chemical components of the filling tank. The internal processing of the tank is to remove the high-contamination dirt. The more concentrated solution is more effective, and the process system is good for upgrading and production, and depends on (please read the precautions on the back before filling and writing this page)
本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 經濟部智慧財產局員工消費合作社印製 1231549This paper size applies to China National Standard (CNS) A4 (210X297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1231549
五、發明説明( 能。此外’亦可延長處理槽之溶液的更換週期 ； 化製程的目的。 更換週期，而達到簡 發明詳細說明： :發明揭露-種化學槽裝置’具有可供處理槽内之溶 液溢流的功能。因此，不僅可矯 反庫漆物. 線去除處理槽内之微粒與 反應之田J產物，達到提高製程可靠度與良率的目^更可 改善對反應之溶液的濃度控制，有效提升製程的效能。為 了使本發明之敘述更加詳盡與完備， 合第1圖至第3圖之圖示。 參-下列描述並配 請參照第1圖，第i圖係繪示本發 ^ 个赞月之一較佳實施例 之化于槽裝置的剖面示意圖’且請一併參照第2圖，第2 圖係繪示本發明之一較佳實施例之化學槽裝置的上視圖， 其中化學槽裝置之框架並未裝設。本發明之化學槽裳置ι〇〇 至少包括外槽1〇2以及内槽104位於外槽1〇2…中外 槽與内槽1〇4之間分隔一段距離，而在外槽1〇2與内 槽104間形成溝槽103。外槽102之材質為抗酸性材料， 例如鐵氟龍（Teflon)或不銹鋼等，且内槽1〇 构"質同樣為 抗酸性材料，可同樣例如為鐵氟龍或不錄鋼等。此外 學槽裝置100更至少包括處理槽106，此處理槽1〇6可2 動式地置入内槽104中，並受到内槽1〇4之支撐與保護， 而此處理槽1 06之材質為抗酸性材料，例如石英等。 其中’處理槽内儲放有溶液120,以進行例如晶圓 之濕處理’例如濕蝕刻或清洗處理，因此溶液12〇可例如 (請先閲讀背面之注意事項再場寫本頁)V. Description of the invention (Yes. In addition, 'the replacement period of the solution in the processing tank can also be extended; the purpose of the chemical process is changed. The cycle is changed to achieve a brief description of the invention's detailed description :: Invention disclosure-a kind of chemical tank device' has available in the processing tank The function of solution overflow. Therefore, it can not only rectify the paint in the reservoir. It can remove the particles in the processing tank and the product of the reaction field J to achieve the purpose of improving the reliability and yield of the process. It can also improve the reaction solution. Concentration control effectively enhances the efficiency of the process. In order to make the description of the present invention more detailed and complete, the diagrams in Figures 1 to 3 are combined. Refer to the following description and refer to Figure 1 and Figure i. A cross-sectional view of a preferred embodiment of the tank device according to the present invention, and please refer to FIG. 2 together, which illustrates a top view of a chemical tank device according to a preferred embodiment of the present invention. View, in which the frame of the chemical tank device is not installed. The chemical tank arrangement of the present invention includes at least the outer tank 102 and the inner tank 104 located in the outer tank 102. The middle and outer tanks and the inner tank 104 Separated by a distance, while in the outer groove 102 and Grooves 103 are formed between the inner grooves 104. The material of the outer groove 102 is an acid-resistant material, such as Teflon or stainless steel, and the inner groove 10 structure is also an acid-resistant material, which may also be iron, for example. Fluoron or non-recorded steel, etc. In addition, the learning tank device 100 further includes at least a processing tank 106, and the processing tank 106 can be moved into the inner tank 104 movably, and is supported and protected by the inner tank 104. The material of this processing tank 106 is an acid-resistant material, such as quartz, etc. Among them, the solution 120 is stored in the processing tank for wet processing such as wafers, such as wet etching or cleaning processing, so the solution 120 can be, for example, (Please read the notes on the back before writing this page)
1231549 A7 B7 五、發明説明（） 身： (請先閲讀背面之注意事項再填寫本頁} -訂· 為姓刻劑。此外，處理槽1 〇6之槽壁的開口端更具有耳部 108，且此耳部ι〇8向處理槽1〇6外延伸一小段距離並蓋過 内槽104且與外槽1〇2相隔一段距離，以利提取處理槽 1 〇 6 ’並使溶液1 2 0得以順利溢流而通過。另外，内槽1 〇 4 之槽壁的上端具有楔型結構116，當處理槽106置入内槽 104中時，處理槽1〇6之耳部1〇8之底部與内槽1〇4之楔 型結構1 1 6之端點接合。因此，當溢流之溶液丨2〇順著處 理槽106之耳部1〇8並沿著耳部108之底部向下流時，頂 端與耳部1 0 8之底部接合的楔型結構1 1 6，可順向導引溢 流之溶液120，使溢流之溶液120沿内槽1 04之外壁而向 下流向溝槽1 之底部。如此一來，可避免溢流之溶液i 2〇 順著處理槽1〇6之耳部108底部流入處理槽1〇6與内槽1〇4 之間，而造成污染。 在外槽102之槽壁頂端更裝設有一痤活動式的框架 11〇’其中這些框架110朝外槽1〇2内延伸而超過處理槽 1〇6之槽壁一小段距離，且這些框架11〇可用以裝設化學 物輸送管路或感測器等。在外槽1 02上方之框架1丨〇與處 理槽106之耳部108之間更形成有通道122，以利處理糟 經濟部智慧財產局員工消費合作社印製 内之溶液120溢流通過。此外，溝槽1〇3之底部的角9 落（亦即為外槽102之角落）設置排放孔124以及楔型導济 結構114，其中排放孔124之數量可例如為4個，且換2 導流結構114位於排放孔124以外之溝槽1〇3底部的其餘 部分。因此，當溶液120溢流至溝槽103底部時，可藉由1231549 A7 B7 V. Description of the invention () Body: (Please read the notes on the back before filling out this page}-Customize the last name. In addition, the open end of the tank wall of the processing tank 1 06 has ears 108 And the ear ι〇8 extends a small distance to the outside of the processing tank 106 and covers the inner tank 104 and is separated from the outer tank 102 by a distance to facilitate the extraction of the processing tank 106 and the solution 1 2 0 passes through smoothly. In addition, the upper end of the groove wall of the inner groove 104 has a wedge-shaped structure 116. When the treatment groove 106 is placed in the inner groove 104, the ear portion 10 of the treatment groove 10 The bottom is joined to the end of the wedge-shaped structure 1 16 of the inner groove 104. Therefore, when the overflow solution 丨 20 flows along the ear portion 108 of the treatment groove 106 and flows down the bottom of the ear portion 108 At this time, the wedge-shaped structure 1 1 6 that the top end is joined to the bottom part of the ear 108 can guide the overflowing solution 120 in a forward direction, so that the overflowing solution 120 flows down the groove along the outer wall of the inner groove 104 1 bottom. In this way, the overflow of the solution i 20 can be prevented from flowing into the processing tank 1 06 and the inner tank 104 along the bottom of the ear 108 of the processing tank 10 At the top of the tank wall of the outer tank 102, an acne movable frame 11 ′ is further installed, wherein these frames 110 extend into the outer tank 102 and exceed a short distance of the tank wall of the processing tank 106, and these frames 110 can be used to install chemical conveying pipes or sensors, etc. A channel 122 is formed between the frame 10 above the outer tank 102 and the ear 108 of the processing tank 106 to facilitate the disposal of the wisdom of the Ministry of Economic Affairs. The solution 120 in the printed printing of the consumer cooperative of the property bureau passed through. In addition, the corner 9 of the bottom of the groove 103 (ie, the corner of the outer groove 102) is provided with a discharge hole 124 and a wedge-shaped guide structure 114. The number of the discharge holes 124 may be, for example, four, and the second guide structure 114 is located at the bottom of the groove 103 outside the discharge hole 124. Therefore, when the solution 120 overflows to the bottom of the groove 103, By
經濟部智¾財產局員工消費合作社印製 1231549 ’ A7Printed by the Intellectual Property Department of the Ministry of Economic Affairs, Consumer Consumption Cooperative of the Property Bureau 1231549 ’A7
五、發明説明（） 楔型導流結構1 U以及重力的作用，將溶液12〇導引至排 放孔1 24而排出化學槽裝置1 〇〇。 另外’本發明之化學槽裝置1〇〇更至少包括液面控制 器118位於該處理槽1〇6内之溶液12〇上，藉由此液面控 制器118可調整處理槽1〇6内之溶液12〇的液面高度，亦 即可控制處理槽丨06内之溶液丨2〇的體積。此化學槽裝置 1〇〇尚可裝置自動噴灑系統丨12於外槽102之内壁上，並 使自動噴灑系統1 1 2環繞在外槽丨〇2與内槽丨〇4間之溝槽 1 03的上方。此自動喷灑系統丨丨2可利用例如定時器（未繪 示）來控制其喷灑清洗溶液的動作。 口月參照第3圖’第3圖係緣示本發明之一較佳實施例 之化學槽裝置的自動喷灑裝置的部分放大示意圖。此自動 喷/麗系統1 1 2上具有相當多的呈水平擺設之喷嘴1 2 6 ,可 朝外槽1 02之内壁與内槽1 〇4之外壁水平喷射清洗之溶 液，例如去離子水。舉例而言，可調整定時器，使自動喷 麗系統1 1 2於溶液1 2 0產生溢流之後，隨即進行清洗溶液 的喷灑’以清洗隨著溶液1 2 0流過所沾附於外槽1 〇 2之内 壁以及内槽1 04之外壁的微粒以及副產物等污染物，以維 持溝槽1 03之暢通，並降低設備之污染，延長設備之使用 壽命。 本發明之化學槽裝置100運作方式係將物品（未繪 示），例如一批晶圓，完全浸入處理槽1 〇6之溶液丨2〇中， 此物品會將使溶液1 2 0液面上升而產生溢流。當此物品於 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention () The wedge-shaped diversion structure 1 U and the effect of gravity guide the solution 120 to the discharge hole 1 24 and discharge the chemical tank device 100. In addition, the chemical tank device 100 of the present invention further includes at least a liquid level controller 118 located on the solution 12 in the processing tank 106, and thereby the liquid level controller 118 can adjust the level in the processing tank 106. The height of the liquid surface of the solution 12 can control the volume of the solution 20 in the treatment tank 丨 06. The chemical tank device 100 can still be equipped with an automatic spraying system 12 on the inner wall of the outer tank 102, and the automatic spraying system 1 12 surrounds the groove between the outer tank 1 2 and the inner tank 1 04 Up. The automatic spraying system 2 can use, for example, a timer (not shown) to control the action of spraying the cleaning solution. Fig. 3 is a schematic enlarged partial schematic view of an automatic spraying device of a chemical tank device according to a preferred embodiment of the present invention. This automatic spray / liquid system 1 12 has quite a number of horizontally arranged nozzles 12 6 which can spray the cleaning solution horizontally toward the inner wall of the outer tank 102 and the outer wall of the inner tank 104, such as deionized water. For example, the timer can be adjusted so that the automatic spray system 1 1 2 overflows after the solution 1 2 0, and then sprays the cleaning solution to clean the adhered outside as the solution 1 2 0 flows. Contaminants such as particles and by-products on the inner wall of the groove 102 and the outer wall of the inner groove 104 can maintain the smoothness of the groove 103, reduce the pollution of the equipment, and extend the service life of the equipment. The operation method of the chemical tank device 100 of the present invention is to completely immerse an object (not shown), such as a batch of wafers, in the solution of the processing tank 1 06 and 20, which will cause the liquid level of the solution 120 to rise. And overflow occurs. When this article applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) at this paper size (Please read the precautions on the back before filling this page)
1231549 A7 ---------- R7 _ 五、發明説明（） 溶液120中完成處理後 设 將此物品取出，此時處理槽106 内之溶液120之液面舍下政 + 嘗下降。接者，從外槽102上端之框 架1 ίο内所預认之管路排出新鮮的溶液，使處理槽 内之1 20的液面回復到液面控制m 8所預設之高度。然 後，再將另物σσ浸入處理槽106内之溶液120中，而使 >谷液1 20再-人產生溢流。其中，可藉由調控液面控制器 118來改羑/今液1 20之溢流量。舉例而言，當所欲進行處 理之物體的體積維持一定時，若液面控制_ 118係將溶液 120之液面高度維持在較高的情況下，溶液12〇的溢流量 會較浴液1 20之液面高度維持在較低之下的溢流量大。 由於’溶液120產生溢流時，會將原本存在於溶液120 中之微粒以及反應之副產物等污染物的一部分一併帶出處 理槽1 06 °如此一來，可減少留置在處理槽丨〇6内之微粒 以及反應之副產物等污染物的數量。因此，當加入新鮮之 溶液120於處理槽1〇6時，可有效降低處理槽1〇6内之溶 液120的污染物濃度。 (請先閲讀背面之注意事項再填寫本頁) 费. -訂· 經濟部智慧財產局員工消費合作社印製 槽溶出可理及程 内的排，處以製 有中而流於粒高 具槽中溢當微提 種理槽的，之到 一 處溝液是内達 供之的溶於槽 ， 提槽間之。理染 在内之内量處污 是於槽槽含釋之 就置外理的稀圓 點使與處物效晶 優可槽由產有低 一 ，内藉副可降 之置到，與，可 明裝流來量後 ， 發槽溢 一 粒液此 本學，此微溶因 ， 化劑如之之 。 述之刻。内鮮度 所計蝕置槽新濃 上設如裝理加的 綜槽例槽處添物 外，學少中產 與液化減槽副 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 1231549 A7 五、發明説明（） 可靠度與產品良率的目的。 (請先閲讀背面之注意事項再填寫本頁) 本發明之又一優點就是因為藉由化學槽内之溶液的有 效溢流，可降低微粒與副產物的濃度&因此，可增加對溶 液濃度的有效控制，進而達到提升製程效能與可靠度的目 的。 本發明之又一優點就是因為可線上溢流處理槽内之蝕 刻劑，因此可大幅延長處理槽之處理溶液的更換週期，而 達到簡化製程的目的。 -、v-tx 本發明之再一優點就是因為本發明可利用溢流的方 式’而在線上順利地更換處理槽内一部分之蝕刻劑，並夢 以降低處理槽内之污染物的數量。因此，本發明之化學槽 裝置在應用上相當簡單方便，且可省下購置過濾器所需之 高額費用。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 圖式簡單說明： 本發明的較佳實施例已於前述之說明文字中辅以τ % 圖形做更詳細的闡述，其中： 經濟部智慧財產局員工消費合作社印製 第1圖係繪示本發明之一較佳實施例之化學槽裝置# 剖面示意圖； 第2圖係繪示本發明之一較佳實施例之化學槽震置的 10 1231549 A7 B7 五、發明説明（） 上視圖，其中化學槽裝置之框架並未裝設；以及 第3圖係繪示本發明之一較佳實施例之化學槽裝置的 自動喷灑裝置的部分放大示意圖。 (請先閲讀背面之注意事項再填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 圖號對照說明： 100 化學槽裝置 102 外槽 103 溝槽 104 内槽 106 處理槽 108 耳部 110 框架 112 自動喷灑 114 楔型導流結構 116 楔型結構 118 液面控制器 120 溶液 122 通道 124 排放孔 126 喷嘴 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐)1231549 A7 ---------- R7 _ V. Description of the invention () After finishing the processing in solution 120, set this item out. At this time, the liquid level of the solution 120 in the processing tank 106 will be removed + try to drop. Then, the fresh solution is discharged from the pipe identified in the frame 1 at the upper end of the outer tank 102, so that the liquid level of 1 20 in the processing tank is returned to the height preset by the liquid level control m 8. Then, the other object σσ is immersed in the solution 120 in the processing tank 106, so that the > Valley 1 20 will overflow again. Among them, it is possible to change the overflow flow of the liquid / current liquid 1 20 by adjusting the liquid level controller 118. For example, when the volume of the object to be treated is maintained constant, if the liquid level control _ 118 is to maintain the liquid level of the solution 120 at a high level, the overflow of the solution 120 will be greater than that of the bath liquid 1 The liquid level of 20 maintains a large overflow below the lower level. When the solution 120 overflows, a part of the pollutants such as the particles and the by-products of the reaction that are originally present in the solution 120 are taken out of the processing tank 1 06 °, so that it can be kept in the processing tank. The number of particulates and byproducts of the reaction in 6 and other pollutants. Therefore, when the fresh solution 120 is added to the processing tank 106, the pollutant concentration of the solution 120 in the processing tank 106 can be effectively reduced. (Please read the notes on the back before filling in this page) Fee. -Order · Printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the dissolution can be processed within the process, and it should be processed in the medium and flow into the high-groove tank. When the overflowing micro-seeds are sorted, the ditch solution is dissolved in the tank and the space between the tanks. The internal pollution treatment of dyeing and dyeing is done in the slot. The thin round dots that are placed outside are used to make the material effective. The crystal can be made from the lower one, and the internal borrowing can be lowered. It can be clear that after the flow is measured, the tank overflows with a grain of liquid. In this case, the slight dissolution is caused by the chemical agent. Story of the moment. The freshness of the corrosion tank calculated by the internal freshness is set as the addition of a comprehensive addition tank. The paper size of the middle school and the liquefied reduction tank is in accordance with the Chinese national standard (CNS) A4 specification (210X297 mm) 1231549 A7. V. Description of the invention () The purpose of reliability and product yield. (Please read the precautions on the back before filling this page) Another advantage of the present invention is that the effective concentration of the solution in the chemical tank can reduce the concentration of particles and by-products. Therefore, the concentration of the solution can be increased. Effective control to achieve the purpose of improving process efficiency and reliability. Another advantage of the present invention is that because the etchant in the processing tank can be overflowed on-line, the replacement period of the processing solution in the processing tank can be greatly extended, and the purpose of simplifying the process is achieved. -, V-tx Another advantage of the present invention is that because the present invention can utilize the overflow method 'to smoothly replace a part of the etchant in the processing tank on the line, and dream to reduce the amount of pollutants in the processing tank. Therefore, the chemical tank device of the present invention is relatively simple and convenient in application, and can save the high cost required for purchasing a filter. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit of the present invention Effective changes or modifications should be included in the scope of patent application described below. Brief description of the drawings: The preferred embodiment of the present invention has been described in more detail in the preceding explanatory text supplemented by τ% graphics, of which: The first figure printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economics shows the invention A schematic view of a cross section of a chemical tank device in one preferred embodiment; FIG. 2 is a diagram showing a chemical tank 10 1231549 A7 B7 which is a preferred embodiment of the present invention 5. Description of the invention () Top view, in which the chemical tank The frame of the device is not installed; and FIG. 3 is a partially enlarged schematic view showing an automatic spraying device of a chemical tank device according to a preferred embodiment of the present invention. (Please read the precautions on the back before filling out this page.) Customized drawing number comparison description printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs: 100 chemical tank device 102 outer tank 103 groove 104 inner tank 106 processing tank 108 ear 110 Frame 112 Automatic spraying 114 Wedge-shaped guide structure 116 Wedge-shaped structure 118 Level controller 120 Solution 122 Channel 124 Drain hole 126 Nozzle This paper size applies to China National Standard (CNS) A4 specification (210 × 297 mm)
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91121686A TWI231549B (en) | 2002-09-20 | 2002-09-20 | Chemical bath |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91121686A TWI231549B (en) | 2002-09-20 | 2002-09-20 | Chemical bath |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI231549B true TWI231549B (en) | 2005-04-21 |
Family
ID=36121980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91121686A TWI231549B (en) | 2002-09-20 | 2002-09-20 | Chemical bath |
Country Status (1)
| Country | Link |
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| TW (1) | TWI231549B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI748637B (en) * | 2020-09-08 | 2021-12-01 | 錫宬國際股份有限公司 | Wafer processing device and wafer processing method |
-
2002
- 2002-09-20 TW TW91121686A patent/TWI231549B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI748637B (en) * | 2020-09-08 | 2021-12-01 | 錫宬國際股份有限公司 | Wafer processing device and wafer processing method |
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