TWI228288B - Wafer lifter pin - Google Patents

Wafer lifter pin Download PDF

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Publication number
TWI228288B
TWI228288B TW92115143A TW92115143A TWI228288B TW I228288 B TWI228288 B TW I228288B TW 92115143 A TW92115143 A TW 92115143A TW 92115143 A TW92115143 A TW 92115143A TW I228288 B TWI228288 B TW I228288B
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Taiwan
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wafer
hole
scope
patent application
item
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TW92115143A
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Chinese (zh)
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TW200428558A (en
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Chao-Hsiang Fan
Te-Hsiang Liu
Chun-Kuang Liu
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Taiwan Semiconductor Mfg
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Publication of TWI228288B publication Critical patent/TWI228288B/en

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Abstract

The invention provides a wafer lifter pin for lifting a wafer disposed on a platform. The platform has at least a circle shape penetrated hold, the center of circle of penetrated hold defines as a hold center. The wafer lifter pin comprises a socket and a pin. The socket is a column. The pin is a column and is located eccentrically on surface of the socket. By rotating the wafer lifter pin, makes the pin to be close to the hole center to avoid friction producing from between the all of penetrated hold and the pin during the wafer lifter pin lifts and descends.

Description

12282881228288

【發明所屬之技術領域】 本發明係關於一種升降裝置(lifter pin),尤指於 ^ 設備中升降晶圓的升降裝置。 、守 、 【先前技術】 ,傳統上的半導體製程設備中,晶圓係透過一機械手臂將 晶圓於不同的反應室(station)間傳遞。特別是,當晶圓表 面溫度仍高而需要進行冷卻時,機械手臂會將該晶圓送入礞 於半導體設備中的冷卻室(co〇lingstati〇n)進行冷卻程 序。為了提高半導體設備的自動化程度,機械手臂與冷卻 室於傳遞晶圓時,會使用到冷卻室中的一種升降裝置。於 冷卻室中晶圓係置放於一平台表面上。平台具有三個相同 大小的貫穿孔洞,並且於貫穿孔洞中具有相對應的升降梦 置。當機械手臂將晶圓從冷卻室取出時,三具升降裝置^ 同時升起,而將置於冷卻室中平台上的晶圓舉起,使得A 械手臂得以順利取出晶圓。 請參閱第1圖,第1圖為習知升降裝置與平台之示意圖。如 型號為LAM9600之半導體設備中所使用到冷卻室具有—平a 1 0 (為實際平台的部分)。平台1 0具有一貫穿孔洞1 2。於貫° 穿孔洞12内具有一升降裝置14。如第1圖中所示之升降|置 14係為上升後狀態。 凊參閱第2圖,第2圖為習知升降裳置之側視圖。升降裝置[Technical field to which the invention belongs] The present invention relates to a lifter pin, particularly a lifter for lifting wafers in a device. [Previous technology] In traditional semiconductor process equipment, the wafer is transferred between different reaction stations by a robotic arm. In particular, when the surface temperature of the wafer is still high and cooling is required, the robot arm will send the wafer into a cooling chamber (collingstation) in a semiconductor device for a cooling process. In order to improve the automation degree of semiconductor equipment, the robot arm and the cooling chamber use a lifting device in the cooling chamber when transferring wafers. The wafers are placed on a platform surface in a cooling chamber. The platform has three through holes of the same size, and has corresponding lifting dreams in the through holes. When the robotic arm takes out the wafer from the cooling chamber, the three lifting devices ^ are simultaneously raised, and the wafer placed on the platform in the cooling chamber is lifted, so that the A robotic arm can take out the wafer smoothly. Please refer to FIG. 1. FIG. 1 is a schematic diagram of a conventional lifting device and a platform. For example, the cooling chamber used in the semiconductor device of model LAM9600 has-flat a 1 0 (part of the actual platform). The platform 10 has a through hole 12. A lifting device 14 is provided in the through-hole 12. As shown in Figure 1, the lift | set 14 is the state after rising.凊 Refer to Figure 2, which is a side view of the conventional elevator. Lifting device

1228288 五、發明說明(2) 14包含一栓柱21和一托座22,其中托座“具有一 23。由於夾鉗部位23具有彈性變形的能力 ,。卩位 透a夾鉗部位2 3夾鉗栓柱21而完成習知升降裝置14 '、 =於半導體製程中會使用到一些具腐餘性的氣體或液 體’因此當晶圓被送入冷卻室時’仍會帶有些許這類^ :性的氣體或液體:所以:料裝置14是需要能抗腐:腐 ,。並且,晶圓剛送入冷卻室時仍具有約30()度的溫 以,升降裝置14也需要能抗高溫。因此,習知升 私 的栓柱21係以陶瓷材質所製成。 、瓦 然而,由於平台10與升降裝置14為不同製造商所生 且栓柱21在製作時可能並非完美地筆直,可能在栓柱“上 半部具有稍微彎曲,而導致其與貫穿孔洞丨2之該侧 觸。因此習知升降裝置14於升降的過程中,升降裝置“的 检柱21極容易與平台1〇的貫穿孔洞12之内壁產生^擦,進 而產生微粒而污染晶圓。並且,習知升降裝置丨4的^柱2】 極容易因升降裝置14於運動過程中,由於夾鉗部位^鬆動 而導致栓柱21脫落,進而使承載的晶 i 圓傾斜並損壞。由於該栓柱係以陶瓷製成,因此於脫落後 極容易斷裂。 ' 【發明内容】 要目的在於提供一種避免產生摩擦與微粒之晶1228288 V. Description of the invention (2) 14 includes a peg 21 and a bracket 22, wherein the bracket "has a 23. Because the clamp portion 23 has the ability to elastically deform, the position is a through the clamp portion 2 3 clamps Clamping the pin 21 and completing the conventional lifting device 14 ', = some corrosive gases or liquids will be used in the semiconductor process' so when the wafer is sent into the cooling chamber' there will still be some such ^ : Nature gas or liquid: So: the material device 14 needs to be able to resist corrosion: rot, and the wafer still has a temperature of about 30 () degrees when the wafer is first sent into the cooling chamber, and the lifting device 14 also needs to be resistant to high temperatures . Therefore, the conventional studs 21 are made of ceramic material. However, since the platform 10 and the lifting device 14 are made by different manufacturers and the studs 21 may not be perfectly straight when they are manufactured, they may be in the studs. The upper part of the pillar has a slight curvature, which causes it to contact the side of the through hole 2. Therefore, during the lifting process of the known lifting device 14, the detection column 21 of the lifting device is extremely easy to rub against the inner wall of the through hole 12 of the platform 10, and then generate particles to contaminate the wafer. Also, the known lifting device 丨Column 2 of 4] It is very easy for the lifting device 14 to move during the movement, and the pin 21 will fall off due to the loosening of the clamp part ^, which will cause the loaded crystal circle to tilt and damage. Because the pin is made of ceramics Therefore, it is extremely easy to break after falling off. [Summary of the Invention] The main purpose is to provide a crystal that avoids friction and particles.

1228288 五、發明說明(3) 本發明的另一目的在於提供一種不會有鬆脫現象且仍能抗 腐蝕與高溫之晶圓升降裝置。 本發明所提供的晶圓升降裝置(lifter pin),係用以升降 ί f於一平台上的一晶圓(wafer)。平台具有至少一個圓形 =穿孔洞,並且每—貫穿孔洞均具有一側壁。將圓形貫穿 + =之圓心定義為一孔洞中心點。晶圓升降裝置係設置於 ^ =洞内,將於上升狀態時才得以被觀察到晶圓升降裝 晶圓升降裝置包含一托座與一栓柱。托座大體 圓心定義A—第ΐ二表面,並將第一上表面的 義= 表面以及一底面,並將第二上表面的圓心定 … 第一中心點。栓柱之底面係盥托产之第一卜矣面豎 密結合,並且检;夕楚-士、 第上表面緊 = 旋轉晶圓升降裝置,使得第二中心點可更 降裂置進#二& S = f t柱與該貫穿孔洞之侧壁於晶圓升 机罝進灯升降時產生摩擦。 ΚίϊΓϊϋ:精神可以藉由以下的發明詳述及所附 w于到進一步的瞭解。 【實施方式】 上本發明严圓升降装置與平台之示意 圓形貫穿孔:鬥32丁内之且V" 31曰,係具有一圓形貫穿孔洞32。於 穿孔洞32内具有一晶圓升降震置33。如第3圖中所示1228288 V. Description of the invention (3) Another object of the present invention is to provide a wafer lifting device that does not have a loosening phenomenon and still resists corrosion and high temperature. The wafer lifter provided by the present invention is used to lift a wafer on a platform. The platform has at least one circular = perforated hole, and each through hole has a side wall. The center of a circle penetrating + = is defined as the center point of a hole. The wafer lifting device is set in the ^ = hole, and the wafer lifting device can be observed only when the wafer is lifting. The wafer lifting device includes a bracket and a pin. The base of the bracket generally defines A—the second surface, and the meaning of the first upper surface = the surface and the bottom surface, and the center of the second upper surface is defined as the first center point. The bottom surface of the stud is the first and the second surface of the sanitary ware, which are vertically and closely combined, and inspected; Xichu-Shi, the top surface is tight = the wafer lifting device is rotated, so that the second center point can be lowered and placed into # 二& S = ft pillar and the side wall of the penetrating hole generate friction when the wafer lifter enters the lamp and rises. ΚίϊΓϊϋ: The spirit can be further understood by the following detailed description of the invention and the appended w. [Embodiment] The schematic diagram of the strictly circular lifting device and platform of the present invention. Circular through-holes: inside the bucket 32 D and V " 31, it has a circular through-hole 32. A wafer lifting and lowering device 33 is provided in the through hole 32. As shown in Figure 3

1228288 五、發明說明(4) 之晶圓升降裝晉q q & 貫穿,僅描::為個 d 以均具有-側壁。s圓:乂明)並且母-圓形貫穿孔洞 孔㈣内,而:圓;::^裝置33係設置於每-圓形貫穿 32之侧壁平行,因,置33升降移動方向係與貫穿孔洞 以被觀察到全貌。美:曰::裝置33將於上升狀態時才得 平台31,因此透圓遠;於貫穿孔洞32,並且小於 内之晶Ϊ升降裝置33,& ^貫穿孔洞32 力而平穩地舉起晶圓。门時上升所產生的二點平衡支撐 請參閱第4圖,笛 發明晶圓升降/置33ii晶圓升降裝置之示意圖。本 體上A =: 托座41與一栓柱42。托座41大 =為=體’並且具有一平坦表面之第一上表面43。並 面43的圓心定義為一第一中心點46。栓柱42也 ^體上為圓柱H,並且具有一平坦表面之第二上表面44以 一底面45。將第二上表面44的圓心定義為一第二中心點 47。栓柱42之底面45係與托座41之第一上表面43緊密結 口 ,並且栓柱42之第二中心點47離托座41之第中心點46有 一特定距離。簡單地說,拴柱42偏心地設置於托座41所具 有的第一上表面4 3。上述偏心係指栓柱4 2之軸心與托座41 之軸心具有一定的偏心量。 請參閱第5圖’第5圖為升降裝置與圓形貫穿孔洞之俯視 圖。將圓形貫穿孔洞3 2之圓心定義為一孔洞中心點口。第 一上表面43之直徑大於該第二上表面44之直徑,並且小於 該貫穿孔洞32之直徑。1228288 Fifth, the description of the invention (4) The wafer lifting device q q & runs through, only depicting: as a d to have-side walls. s circle: 乂 明) and the mother-circular through the hole ㈣, and: circle ;: ^ device 33 is arranged parallel to the side wall of each-circular through 32, because the 33 moving direction of the 33 is connected with the through The holes were observed in full view. Beauty: Said :: The device 33 will only get the platform 31 when it is in the ascending state, so it is completely round; it penetrates through the hole 32 and is smaller than the internal crystal lifting device 33, and ^ passes through the hole 32 to lift the crystal smoothly. circle. The two-point balanced support generated when the door is raised. Please refer to Figure 4, which is a schematic diagram of the wafer lifting / disposing 33ii wafer lifting device. On the body, A =: bracket 41 and a bolt 42. The bracket 41 is large and has a first upper surface 43 having a flat surface. The center of the circle 43 is defined as a first center point 46. The peg 42 is also cylindrical H on the body, and has a second upper surface 44 and a bottom surface 45 having a flat surface. The center of the circle of the second upper surface 44 is defined as a second center point 47. The bottom surface 45 of the peg 42 is in close joint with the first upper surface 43 of the bracket 41, and the second center point 47 of the peg 42 is at a specific distance from the first center point 46 of the bracket 41. In short, the bolt 42 is eccentrically provided on the first upper surface 43 of the holder 41. The above eccentricity means that the axis of the bolt 42 and the axis of the bracket 41 have a certain amount of eccentricity. Please refer to FIG. 5 'FIG. 5 is a plan view of the lifting device and the circular through hole. The center of the circle through the hole 32 is defined as the center point of a hole. The diameter of the first upper surface 43 is larger than the diameter of the second upper surface 44 and smaller than the diameter of the through hole 32.

第8頁 1228288 五、發明說明(5) 請參閱第6圖’第6圖為旋轉過之升降裝置與圓形 之俯視圖。由於栓柱42之第二中心點 穿匕洞 心點46並非重疊,而a且古杜—祕 第一中Page 8 1228288 V. Description of the invention (5) Please refer to Fig. 6 '. Fig. 6 is a plan view of a rotating lifting device and a circle. Since the second center point of the bolt 42 penetrates the dagger hole, the heart point 46 does not overlap, and a

而疋具有一特疋距離,所以當順著栋M 方而旋轉晶圓升降裝置33時,會使得栓柱42由原= 位置(虛_線圓形的位置)改變至如第6圖中所示之位置,、 此,第一中心點4 7可更接近孔洞中心5丨,所以,可以 旋轉晶圓升降裝置33適當角度,使得栓柱42與圓形貫=However, 疋 has a special 疋 distance, so when the wafer lifting device 33 is rotated along the side of the building M, the peg 42 will be changed from the original position (the position of the circle of the dashed line) to that shown in FIG. 6. The first center point 4 7 can be closer to the hole center 5 丨, so the wafer lifting device 33 can be rotated at an appropriate angle so that the peg 42 and the circular through =

洞32之側壁沒有接觸,而避免栓柱“與於晶圓 進行升降時產生摩擦。 飞教置U 栓柱42與托座41彼此係一體成形而緊密結合,且栓柱42和 托座41均以抗腐姓且耐高溫的鋁金屬所製作。因此,與習 知升降裝置比起,晶圓升降裝置3 3於升降運動過程中,不 會像習知升降裝置之夹鉗部位鬆動而導致栓柱脫落,進而 使承載的晶圓傾斜並損壞。並且由於晶圓升降裝置33以鋁 金屬而製作,因此仍與習知升降裝置具有抗腐蝕且耐高溫 之能力。 藉由以上較佳具體實施例之詳述,係希望能更加清楚描述 f發明之特徵與精神,而並非以上述所揭露的較佳具體實 =例^對本發明之範疇加以限制。相反地,其目的是希望 能涵蓋各種改變及具相等性的安排於本發明所欲申請之專 利範圍的範嘴内。The side wall of the hole 32 is not in contact, so as to prevent the studs from "friction when the wafer is raised and lowered. The flying stud U and the studs 42 and the brackets 41 are integrally formed with each other and are tightly coupled. It is made of anti-corrosion and high temperature resistant aluminum metal. Therefore, compared with the conventional lifting device, the wafer lifting device 33 will not cause the bolt to become loose during the lifting movement of the conventional lifting device. The pillar falls off, thereby tilting and damaging the loaded wafer. And because the wafer lifting device 33 is made of aluminum metal, it still has the ability to resist corrosion and high temperature with the conventional lifting device. With the above preferred specific embodiments The detailed description is intended to describe the features and spirit of the invention more clearly, rather than to limit the scope of the invention with the preferred embodiments disclosed above. Instead, the purpose is to cover various changes and Equivalent arrangements are within the scope of the patent scope of the present invention.

1228288 圖式簡單說明 【圖式簡單說明】 第1圖為習知升降裝置與平台之示意圖。 第2圖為習知升降裝置之側視圖。 第3圖為本發明晶圓升降裝置與平台之示意圖。 第4圖為本發明晶圓升降裝置之示意圖。 第5圖為本升降裝置與圓形貫穿孔洞之俯視圖。 第6圖為旋轉過之升降裝置與圓形貫穿孔洞之俯視圖。 【元件代表符號簡單說明】 10、31平台 1 2貫穿孔洞 14升降裝置 21、 42栓柱 22、 41 托座 2 3 夾鉗部位 3 2圓形貫穿孔洞 33晶圓升降裝置 41 托座 4 2 栓柱 43第一上表面 44 第二上表面 4 5底面1228288 Schematic illustration [Schematic description] Figure 1 is a schematic diagram of a conventional lifting device and platform. Figure 2 is a side view of a conventional lifting device. FIG. 3 is a schematic diagram of a wafer lifting device and a platform according to the present invention. FIG. 4 is a schematic diagram of a wafer lifting device according to the present invention. Figure 5 is a plan view of the lifting device and the circular through hole. Figure 6 is a top view of the rotating lifting device and the circular through hole. [Simple description of component representative symbols] 10, 31 platform 1 2 penetrating hole 14 lifting device 21, 42 pin 22, 41 bracket 2 3 clamp portion 3 2 circular penetrating hole 33 wafer lifting device 41 bracket 4 2 pin Post 43 first upper surface 44 second upper surface 4 5 bottom surface

第10頁 1228288 圖式簡單說明 點 46第一中 47第二中心S 5 1 孔洞中心I 61 旋轉方向Page 10 1228288 Brief description of the drawing Point 46 First middle 47 Second center S 5 1 Hole center I 61 Direction of rotation

Claims (1)

1228288 六、申請專利範圍 _ 1、一種晶圓升降裝置(Ufter pin),該晶 以升降放置於一平台上的一晶圓,該平台具有降襞置係用 形貫穿孔洞二該圓形貫穿孔洞具有一侧壁,將該:= 孔洞之圓:定義為一孔洞中心點,該晶圓升降裝^ 於該圓形貫穿孔洞内,該晶圓升降裝置包含:” & 一托座,該托座大體上為圓柱體,該托座具有一 一 面,並將該第一上表面的圓心定義為一第一中心點一以及 一栓柱(pm),該栓柱大體上為柱體,該栓柱具有二第二上 表面以及一底面,並將該第二上表面的中心定義為一第二 中心點,該栓柱之該底面係與該托座之該第一上 礞 結合,並且該栓柱之第二中心點離該托座之該二 有一特定距離; τ 其中,藉由旋轉該晶圓升降裝置,使得該第二中心點可更 接近該孔洞中心,避免該栓柱與該貫穿孔洞之該侧壁於該 晶圓升降裝置進行升降時產生摩擦。 2、如申請專利範圍第1項所述之裝置,其中該晶圓遠大於 該貫穿孔洞’並且小於該平台。1228288 VI. Scope of patent application_ 1. A wafer lifting device (Ufter pin), which is a wafer placed on a platform for lifting, the platform has a shape through hole for lowering system 2 the circular through hole With a side wall, this: = the circle of the hole: is defined as the center point of the hole, and the wafer is lifted in the circular through hole. The wafer lifter includes: & a bracket, the bracket The base is generally a cylinder, the bracket has a side, and the circle center of the first upper surface is defined as a first center point and a peg (pm). The peg is generally a cylinder. The stud has two second upper surfaces and a bottom surface, and the center of the second top surface is defined as a second center point. The bottom surface of the stud is combined with the first upper face of the bracket, and the The second center point of the stud has a certain distance from the two of the bracket; τ Among them, by rotating the wafer lifting device, the second center point can be closer to the center of the hole, avoiding the stud and the penetration The side wall of the hole is carried out in the wafer lifting device When the friction drop. 2. The device of claim 1 of the patent scope of the item, wherein the wafer is much larger than the through hole 'and less than the internet. 3、如申請專利範圍第1項所述之裝置,其中該平台為 冷卻室(cooling station)所具有。 4、如申請專利範圍第1項所述之裝置’其中該晶圓升降裴 置為一冷卻室(cooling station)所具有。3. The device according to item 1 of the scope of patent application, wherein the platform is provided in a cooling station. 4. The device according to item 1 of the scope of the patent application, wherein the wafer lifting device is provided in a cooling station. 第12頁 1228288Page 12 1228288 六、申請專利範圍 5、 如申請專利範圍第1項所述之裝置’其中該晶圓升降 裝置係以一抗腐蝕且耐高渫的材質所製成,並且該晶圓升 降裝置為一體成形。 6、 如申請專利範圍第1項所述之裝置,其中該抗腐蝕且 耐高溫的材質為鋁金屬。 7、 如申請專利範圍第丨項所述之裝置,其中該第一圓形 上表面為一平坦表面。 8、 如申請專利範圍第1項所述之裝置,其中該第二圓形 上表面為一平坦表面。 9 如申请專利範圍第1項戶斤述之裝置’其中該晶圓升降 裝置升降移動方向與該貫穷孔洞之側壁平行。 0如申请專利範圍第1項所述之裝置’其中該第一上表面 之直徑大於該第二上表面之直徑,並且小於該貫穿孔 直徑。 、一種晶圓升降裝置(1 i f t er P i η),該晶圓升降裝置係 ,以升降放置於一平台上的〆晶圓(wafer),該平台乓有至 、個圓开^貫穿孔洞,該圓形貫穿孔洞具有一側壁,將今6. Scope of patent application 5. The device described in item 1 of the scope of patent application, wherein the wafer lifting device is made of a material that is corrosion-resistant and resistant to high pressure, and the wafer lifting device is integrally formed. 6. The device as described in item 1 of the scope of patent application, wherein the material resistant to corrosion and high temperature is aluminum metal. 7. The device according to item 丨 in the scope of patent application, wherein the upper surface of the first circle is a flat surface. 8. The device according to item 1 of the scope of patent application, wherein the upper surface of the second circle is a flat surface. 9 The device described in item 1 of the scope of the patent application, wherein the upward and downward movement direction of the wafer lifting device is parallel to the side wall of the through hole. The device according to item 1 of the scope of patent application, wherein the diameter of the first upper surface is larger than the diameter of the second upper surface and smaller than the diameter of the through hole. A wafer lifting device (1 ift er Pi n), which is a wafer lifting device for lifting and lowering a wafer placed on a platform. The platform has a circular opening through the hole. The circular through hole has a side wall. 第13頁 1228288 六、申請專利範圍 ----— 圓形貫穿孔洞之圓心定義為一孔洞中心點,該晶圓升降 置係設置於該圓形孔洞内,該晶圓升降裝置包含·· 一托座’該托座大體上為圓柱體;以及 一栓柱,該栓柱大體上為柱體,並偏心地設置於該托座所-具有的/上表面; 其中,藉由旋轉該晶圓升降裝置,使得該栓柱可更接近該-孔洞中心,避免該栓柱與該貫穿孔洞之該侧壁於該晶圓升 降裝置進行升降時產生摩擦。 1 2、如申請專利範圍第11項所述之裝置,其中該晶圓遠大❹ 於該貫穿孔洞,並且小於該平台。 13、如申請專利範圍第11項所述之裝置,其中該平台為 冷卻室(cooling station)所具有。 14、如申請專利範圍第u項所述之裝置,其中該晶圓升降 裝置為一冷卻室(cooling station)所具有。 其中該晶圓升降 ’並且該晶圓升Page 13 1228288 6. Scope of patent application ——- The center of a circular through hole is defined as the center point of a hole. The wafer lifting device is located in the circular hole. The wafer lifting device contains ... A bracket; the bracket is generally a cylinder; and a peg, which is substantially a column, and is eccentrically disposed on an upper surface of the holder; wherein, by rotating the wafer The lifting device makes the stud closer to the center of the hole, and avoids the friction between the stud and the side wall of the through hole when the wafer lifting device is lifting. 1 2. The device according to item 11 of the scope of patent application, wherein the wafer is much larger than the through hole and smaller than the platform. 13. The device according to item 11 of the scope of patent application, wherein the platform is provided in a cooling station. 14. The device according to item u of the scope of patent application, wherein the wafer lifting device is provided in a cooling station. Wherein the wafer is lifted and the wafer is lifted 1 5、如申請專利範圍第11項所述之裝置, 裝置係以一抗腐蝕且耐高溫的材質所製成 降裝置為一體成形。 16:如巾請專利範圍第u項所述之裝置,其中該抗腐钱且 耐局溫的材質為鋁金屬。15. The device as described in item 11 of the scope of patent application, the device is made of a corrosion-resistant and high-temperature resistant material as a unit. 16: The device described in item u of the patent scope, wherein the material which is anticorrosive and resistant to local temperature is aluminum metal. 1228288 六、申請專利範圍 1 7、如申請專利範圍第11項所述之裝置,其中該第一上表 面為一平坦表面。 18、如申請專利範圍第11項所述之裝置,其中該第二上表 面為一平坦表面。 1 9、如申請專利範圍第11項所述之裝置,其中該晶圓升降 裝置升降移動方向與該貫穿孔洞之側壁平行。 20、如申請專利範圍第11項所述之裝置,其中該第一上表 面之直徑大於該第二上表面之直徑,並且小於該貫穿孔洞 之直徑。1228288 VI. Scope of patent application 1 7. The device described in item 11 of the scope of patent application, wherein the first upper surface is a flat surface. 18. The device according to item 11 of the scope of patent application, wherein the second upper surface is a flat surface. 19. The device according to item 11 of the scope of the patent application, wherein the wafer lifting device is moved in a direction parallel to the side wall of the through hole. 20. The device according to item 11 of the scope of patent application, wherein the diameter of the first upper surface is larger than the diameter of the second upper surface and smaller than the diameter of the through hole. 第15頁Page 15
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471972B (en) * 2008-10-30 2015-02-01 Lam Res Corp Tactile wafer lifter and methods for operating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471972B (en) * 2008-10-30 2015-02-01 Lam Res Corp Tactile wafer lifter and methods for operating the same

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