JP2000178743A - Cvd coating method and cvd device - Google Patents
Cvd coating method and cvd deviceInfo
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- JP2000178743A JP2000178743A JP10348500A JP34850098A JP2000178743A JP 2000178743 A JP2000178743 A JP 2000178743A JP 10348500 A JP10348500 A JP 10348500A JP 34850098 A JP34850098 A JP 34850098A JP 2000178743 A JP2000178743 A JP 2000178743A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はカーボン、ＳｉＣ等
からなる半導体装置用部材にＳｉＣ等を表面コートする
ＣＶＤコーティング方法及びＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD coating method and a CVD apparatus for coating a surface of a semiconductor device member made of carbon, SiC or the like with SiC or the like.
【０００２】[0002]
【従来の技術】例えば、カーボン（黒鉛）やＳｉＣ質焼
結体からなる半導体装置用部材は、近年高純度化を図っ
たり、耐薬品性、耐食性、耐酸化性を改善するため、全
面にＣＶＤ−ＳｉＣコーティングすることが求められる
傾向にある。従来、こうしたＳｉＣ等の部材（ワーク）
にＣＶＤコーティングする際に、かかるワークを炉内に
配したピン状のワーク支持具等で保持することが多かっ
た。この場合、かかる支持具に接触した部材表面には、
反応ガスが接触せず、ＣＶＤ膜がほとんど形成されない
か、コートされてもその部分の膜厚が薄くなる傾向がみ
られた。2. Description of the Related Art For example, in recent years, members for semiconductor devices made of carbon (graphite) or SiC-based sintered body have been subjected to CVD over the entire surface in order to attain high purity and to improve chemical resistance, corrosion resistance and oxidation resistance. -SiC coating tends to be required. Conventionally, such members (work) such as SiC
When CVD coating is performed, such a work is often held by a pin-shaped work support or the like disposed in a furnace. In this case, the surface of the member in contact with the support is
The reaction gas did not come into contact, and almost no CVD film was formed, or even if coated, the film thickness tended to be thin at that portion.
【０００３】そこで、ワークと支持具との接触部の面積
を小さくするため、支持具の先端部を小さくしたり、更
には、支持具の先端部を針状に尖らせたりして、ＣＶＤ
コートしていた。しかしながら、いくら接触部面積を減
らしても、どうしてもＣＶＤ膜が形成されない箇所が存
在していた。Therefore, in order to reduce the area of the contact portion between the work and the support, the tip of the support is reduced, and further, the tip of the support is sharpened in a needle-like manner.
Had a coat. However, no matter how much the contact area was reduced, there were some places where no CVD film was formed.
【０００４】そのため、ワーク全面にＣＶＤコーティン
グする必要がある場合は、一旦、ＣＶＤ炉を室温に戻
し、炉内を開けて、その保持位置をずらしてセットし直
し、再度ＣＶＤコーティングする必要があった。Therefore, when it is necessary to coat the entire surface of the work by CVD, it is necessary to return the temperature of the CVD furnace to room temperature, open the furnace, shift the holding position of the furnace, set it again, and perform the CVD coating again. .
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記方法で
は、保持位置を変えるため、一旦、ＣＶＤコーティング
を中断して、ＣＶＤ炉を冷却して、それから再度、炉を
運転する必要があり、コスト的に割高になったり、生産
性が低下するという問題があった。However, in the above method, in order to change the holding position, it is necessary to interrupt the CVD coating, cool the CVD furnace, and then operate the furnace again, which is costly. However, there are problems that the cost becomes higher and the productivity is lowered.
【０００６】本発明は、上記従来技術の問題点を解消す
るためになされたもので、その目的は、途中でＣＶＤ炉
を開けることなく、ワーク全面にＣＶＤコーティングす
ることができるＣＶＤコーティング方法及びＣＶＤ装置
を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a CVD method and a CVD method capable of performing CVD coating on the entire surface of a work without opening a CVD furnace on the way. It is to provide a device.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明によるＣＶＤコーティング方法は、ＣＶＤ炉
内にワークを配置してＣＶＤコーティングする方法にお
いて、ワークに対して当接位置が異なる少なくとも２組
の支持具でワークを支持可能とし、コーティング中にお
けるワークの支持を前記少なくとも２組の支持具で交互
に行うことを特徴とする。In order to achieve the above object, a CVD coating method according to the present invention is directed to a method of arranging a work in a CVD furnace and performing CVD coating, wherein at least two different contact positions with respect to the work are different. The work can be supported by a set of supports, and the work is supported alternately by the at least two sets of supports during coating.
【０００８】この方法によれば、少なくとも２組の支持
具のうちある１つの支持具でワークを支持してＣＶＤコ
ーティングを行い、コーティングの途中で他の支持具に
ワークを移し変えてコーティングを行うことにより、最
初の支持具で支持したときに支持具が当接してコーティ
ングされなかった部分が、次の支持具で支持したときに
最初の支持具から離れるので、次の支持具で支持してい
る間にコーティングすることができ、ＣＶＤ炉を開いて
作業を中断させなくてもワークの全面をＣＶＤコーティ
ングすることができる。According to this method, the work is supported by one of the at least two sets of supports to perform the CVD coating, and the work is transferred to another support during the coating to perform the coating. By doing so, the part that was not coated due to the contact of the support when supported by the first support is separated from the first support when supported by the next support, so it is supported by the next support In this way, the entire surface of the work can be CVD coated without interrupting the operation by opening the CVD furnace.
【０００９】この場合、前記少なくとも２組の支持具の
うち特定の支持具に対し、他の支持具を昇降可能に配置
し、コーティング中に他の支持具を上昇させてワークの
支持を交代させることが好ましい。[0009] In this case, another supporting member is arranged so as to be able to move up and down with respect to a specific supporting member of the at least two sets of supporting members, and the other supporting member is raised during coating to alternately support the work. Is preferred.
【００１０】また、コーティング中に前記支持具を回転
させてワークを回転させることが好ましく、それによっ
てワークの全周に均一なＣＶＤコーティングがなされ
る。In addition, it is preferable that the work is rotated by rotating the support during the coating, whereby a uniform CVD coating is formed on the entire circumference of the work.
【００１１】一方、本発明によるＣＶＤ装置は、断熱
材、加熱ヒータを配した真空容器からなるＣＶＤ炉と、
このＣＶＤ炉の底壁を貫通して気密的に挿入された複数
の支軸と、これらの支軸の前記ＣＶＤ炉内に配置された
部分にそれぞれ取付けられた支持具とを備え、前記支軸
の特定のものに対して他の支軸が昇降可能とされ、前記
特定の支軸に取付けられた前記支持具にワークを支持さ
せた状態から、前記他の支軸を介して該支軸に取付けら
れた支持具を上昇させることによりワークの支持を交代
させるようにしたことを特徴とする。On the other hand, a CVD apparatus according to the present invention comprises a CVD furnace comprising a vacuum vessel provided with a heat insulating material and a heater,
A plurality of spindles which are hermetically inserted through the bottom wall of the CVD furnace, and supports respectively attached to portions of the spindles arranged in the CVD furnace; The other support shaft can be moved up and down with respect to the specific one, and from the state where the work is supported by the support tool attached to the specific support shaft, the other support shaft is connected to the support shaft through the other support shaft. The support of the work is changed by raising the attached support.
【００１２】このＣＶＤ装置によれば、ＣＶＤコーティ
ングの途中で、前記特定の支軸に取付けられた前記支持
具にワークを支持させた状態から、前記他の支軸を上昇
させると、その支軸に取付けられた支持具が上昇して、
ワークが上昇した支持具で支持される。このため、最初
の支持具で支持したときに支持具が当接してコーティン
グされなかった部分が、次の支持具で支持したときに最
初の支持具から離れ、次の支持具で支持している間にコ
ーティングされるので、ＣＶＤ炉を開いて作業を中断さ
せなくてもワークの全面をＣＶＤコーティングすること
ができる。According to this CVD apparatus, when the other spindle is raised from a state in which the work is supported by the support attached to the specific spindle during the CVD coating, the other spindle is raised. The support attached to
The work is supported by the raised support. For this reason, the part which was not coated due to the contact of the support when supported by the first support is separated from the first support when supported by the next support, and is supported by the next support. Since the coating is performed in between, the entire surface of the workpiece can be coated by CVD without opening the CVD furnace and interrupting the operation.
【００１３】この場合、前記複数の支軸が同心状に配置
された多重軸からなることが好ましく、それによってワ
ークの重心近くに全ての支軸を配置して、ワークの支持
を安定させて行うことができると共に、支持具がＣＶＤ
の底壁を貫通する部分を一つにしてシーリングしやすく
することができる。[0013] In this case, it is preferable that the plurality of spindles are formed of multiple axes arranged concentrically, whereby all the spindles are arranged near the center of gravity of the work to stably support the work. And the support is CVD
The portion penetrating the bottom wall can be made into one to facilitate sealing.
【００１４】また、前記複数の支軸が同心状に配置され
た多重軸からなる場合には、前記複数の支軸を一体に回
転させる回転機構を備えていることが好ましく、それに
よってＣＶＤコーティング中に支軸を回転させてワーク
を回転させることができ、ＣＶＤコーティングを均一に
行わせることができる。In the case where the plurality of spindles are composed of multiple axes arranged concentrically, it is preferable that a rotation mechanism for integrally rotating the plurality of spindles is provided, whereby a plurality of spindles are provided. The work can be rotated by rotating the support shaft at a time, and the CVD coating can be performed uniformly.
【００１５】なお、特定の支持具によってワークを支持
した状態から、他の支持具を上昇させてワークを移し変
え、再び他の支持具を下降させて最初の支持具にワーク
を戻し、このような操作をコーティング中に適時繰り返
してもよい。From the state where the work is supported by the specific support, the other support is raised to transfer the work, and the other support is lowered again to return the work to the first support. Operation may be repeated as needed during coating.
【００１６】また、特定のワークに対して支持を交代さ
せながら行う複数の支軸及び支持具が、一つのＣＶＤ炉
に対して複数組設けられていてもよい。それによって、
一つのＣＶＤ炉内で複数個のワークにＣＶＤコーティン
グを施すことができる。Further, a plurality of sets of a plurality of spindles and supports for performing support while alternately supporting a specific work may be provided for one CVD furnace. Thereby,
A plurality of works can be subjected to CVD coating in one CVD furnace.
【００１７】[0017]
【発明の実施の形態】図１には、本発明によるＣＶＤ装
置の一実施形態が示されている。このＣＶＤ装置は、周
壁１２、底壁１３、及び蓋体１４からなる開閉可能な真
空容器１１を有している。底壁１３と周壁１２の接合
面、及び周壁１２と蓋体１４との接合面には、シールリ
ング１５が介装されて気密性を保持されている。なお、
シールリング１５は、一般に耐熱性が低いため、真空容
器１１全体を水冷ジャケット等で冷却するのが好まし
い。FIG. 1 shows an embodiment of a CVD apparatus according to the present invention. This CVD apparatus has an openable / closable vacuum container 11 composed of a peripheral wall 12, a bottom wall 13, and a lid 14. A seal ring 15 is interposed between the joint surface between the bottom wall 13 and the peripheral wall 12 and the joint surface between the peripheral wall 12 and the lid 14 to maintain airtightness. In addition,
Since the heat resistance of the seal ring 15 is generally low, it is preferable to cool the entire vacuum vessel 11 with a water cooling jacket or the like.
【００１８】真空容器１１内には、内部を囲む断熱材１
６と、その内側に配置された筒状の加熱ヒータ１７と、
加熱ヒータ１７の更に内側に配置されたワークＷを囲む
容器１８とが設置されている。これらの真空容器１１、
断熱材１６、加熱ヒータ１７、容器１８等が本発明にお
けるＣＶＤ炉を構成している。A heat insulating material 1 surrounding the inside of the vacuum vessel 11 is provided.
6, a cylindrical heater 17 disposed inside thereof,
A container 18 surrounding the work W disposed further inside the heater 17 is provided. These vacuum vessels 11,
The heat insulating material 16, the heater 17, the container 18 and the like constitute the CVD furnace of the present invention.
【００１９】真空容器１１の底壁１３を貫通して、第１
支軸２０、第２支軸２１が気密的に挿入されている。す
なわち、底壁１３と、これらの支軸２０、２１との接触
面には、オイルシールや磁気シール等のシール部材２２
が介在されて、気密性が保持されている。第１支軸２０
の上端には、連結軸２３が連接され、連結軸２３は、断
熱材１６及び容器１８の底壁を貫通して、容器１８内に
挿入され、その上端に第１支持具２４が取付けられてい
る。同様に、第２支軸２１の上端には、連結軸２５が連
接され、連結軸２５は、断熱材１６及び容器１８の底壁
を貫通して、容器１８内に挿入され、その上端に第２支
持具２６が取付けられている。なお、第２支軸２１の連
結軸２５は、第１支持具２４の板状部を貫通して上方に
伸び、第２支持具２６は、第１支持具２４の上方に配置
されている。The first through the bottom wall 13 of the vacuum vessel 11
The support shaft 20 and the second support shaft 21 are hermetically inserted. That is, a contact surface between the bottom wall 13 and the support shafts 20 and 21 is provided with a seal member 22 such as an oil seal or a magnetic seal.
And airtightness is maintained. First support shaft 20
A connecting shaft 23 is connected to the upper end of the container 18. The connecting shaft 23 penetrates the heat insulating material 16 and the bottom wall of the container 18, is inserted into the container 18, and the first support 24 is attached to the upper end thereof. I have. Similarly, a connecting shaft 25 is connected to the upper end of the second support shaft 21, and the connecting shaft 25 penetrates the heat insulating material 16 and the bottom wall of the container 18, is inserted into the container 18, and has a second Two supports 26 are attached. The connecting shaft 25 of the second support shaft 21 extends upward through the plate-like portion of the first support 24, and the second support 26 is disposed above the first support 24.
【００２０】第１支持具２４上には、少なくとも３本の
支持ピン２７が突設され、第２支持具２６上にも、少な
くとも３本の支持ピン２８が突設されている。なお、支
持ピン２７は、第２支持具２６の板状部を貫通して上方
に伸びており、第２支持具２６が下降位置にあるとき
は、支持ピン２７の上端が支持ピン２８の上方に位置す
る。また、第２支持具２６が上昇したときには、支持ピ
ン２８の上端が支持ピン２７の上端よりも高くなるよう
に設定されている。ワークＷは、その底壁をこれらの支
持ピン２７又は２８上に当接されて支持されるようにな
っている。At least three support pins 27 protrude from the first support 24 and at least three support pins 28 protrude from the second support 26. The support pin 27 extends upward through the plate-like portion of the second support 26, and when the second support 26 is at the lowered position, the upper end of the support pin 27 is above the support pin 28. Located in. The upper end of the support pin 28 is set higher than the upper end of the support pin 27 when the second support 26 rises. The work W is supported with its bottom wall in contact with these support pins 27 or 28.
【００２１】第２支軸２１の基端には、昇降装置２９が
取付けられている。この昇降装置２９としては、例えば
ボールネジや、エアーシリンダを利用したものなど、公
知の各種駆動手段が採用できる。昇降装置２９は、第２
支軸２１を軸方向（矢印Ａ方向）に移動させて第２支持
具２６を昇降動作させる。An elevating device 29 is attached to the base end of the second support shaft 21. As the elevating device 29, various known driving means such as a device using a ball screw and an air cylinder can be adopted. The lifting device 29 is
The support shaft 21 is moved in the axial direction (the direction of arrow A) to move the second support 26 up and down.
【００２２】なお、断熱材１６、加熱ヒータ１７として
は、カーボンからなるものが好ましく採用され、連結軸
２３、２５及び支持具２６、２８としては、カーボン、
炭化珪素、又は窒化珪素からなるものが好ましい。ま
た、ＣＶＤコーティングを施すワークＷとしては、サセ
プタ、ウエハーボート、チューブ等の半導体装置用部材
が好ましく適用される。The heat insulating material 16 and the heater 17 are preferably made of carbon, and the connecting shafts 23 and 25 and the supporting members 26 and 28 are made of carbon.
Those formed of silicon carbide or silicon nitride are preferable. Further, as the work W to be subjected to the CVD coating, a semiconductor device member such as a susceptor, a wafer boat, and a tube is preferably applied.
【００２３】次に、このＣＶＤ装置を用いた本発明によ
るＣＶＤコーティング方法の一実施形態を説明する。Next, an embodiment of a CVD coating method according to the present invention using this CVD apparatus will be described.
【００２４】図１に示すように、第１支持具２４の支持
ピン２７が第２支持具２６の支持ピン２８よりも上方に
突出した状態にセットし、少なくとも３本ある支持ピン
２７上に前記のようなワークＷを設置し、蓋体１４を閉
めて密封する。この状態で、最初、真空容器１１内を真
空ポンプで減圧し、０．１Ｔｏｒｒ以下に達してからヒ
ータ１８の加熱を開始する。昇温途中の所定温度に達し
たところでＨ2 ガスを導入し、更に昇温して所定温度に
達したところで、ＳｉＣｌ4 ／ＣＨ4 ／Ｈ2 系やＣＨ3
ＳｉＣｌ3 ／Ｈ2 系のガスを炉内に流し、所定の膜厚だ
けＣＶＤ−ＳｉＣコーティングを行う。As shown in FIG. 1, the support pins 27 of the first support 24 are set so as to protrude above the support pins 28 of the second support 26, and the support pins 27 are provided on at least three support pins 27. The work W as described above is installed, and the lid 14 is closed and sealed. In this state, first, the pressure inside the vacuum vessel 11 is reduced by a vacuum pump, and after the pressure reaches 0.1 Torr or less, heating of the heater 18 is started. When the temperature reaches a predetermined temperature during the temperature rise, H 2 gas is introduced. When the temperature is further raised and reaches the predetermined temperature, the SiCl 4 / CH 4 / H 2 system or CH 3 gas is introduced.
A SiCl 3 / H 2 gas is flowed into the furnace, and a predetermined thickness of the CVD-SiC coating is performed.
【００２５】こうして所定の膜厚だけＣＶＤ−ＳｉＣコ
ーティングした後、昇降装置２９により第２支軸２１及
び連結軸２５を介して第２支持具２６を上昇させる。そ
の結果、第２支持具２６の支持ピン２８が、第１支持具
２４の支持ピン２７よりも上方に突出するため、ワーク
Ｗの底面が今度は第２支持具２６の支持ピン２８に支持
されて、第１支軸具２４の支持ピン２７はワークＷの底
面から離れる。この状態で、更にＣＶＤ−ＳｉＣコーテ
ィングを実施する。After the CVD-SiC coating of a predetermined thickness is performed in this way, the second support 26 is raised by the lifting device 29 via the second support shaft 21 and the connection shaft 25. As a result, the support pin 28 of the second support 26 protrudes above the support pin 27 of the first support 24, so that the bottom surface of the work W is supported by the support pin 28 of the second support 26 this time. Thus, the support pin 27 of the first support 24 is separated from the bottom surface of the work W. In this state, CVD-SiC coating is further performed.
【００２６】これにより、最初に第１支持具２４の支持
ピン２７が当接してコーティングされていない部分にも
コーティングされ、ワーク全面にＣＶＤ−ＳｉＣコーテ
ィングすることができる。しかも、コーティング中にワ
ークＷの支持部を変えることができるので、一旦ＣＶＤ
炉を冷却し、炉内を室温にもどして、ワークの支持位置
をずらすなどの必要がない。As a result, first, the support pins 27 of the first support 24 come into contact with the uncoated portions, so that the entire surface of the work can be coated with CVD-SiC. In addition, since the supporting portion of the work W can be changed during the coating,
There is no need to cool the furnace, return the furnace to room temperature, and shift the support position of the work.
【００２７】図２には、本発明によるＣＶＤ装置の他の
実施形態が示されている。なお、図１の実施形態と実質
的に同一部分には同符合を付してその説明を省略するこ
とにする。また、図２では、図１における真空容器１
１、断熱材１６、加熱ヒータ１７、容器１８等は省略し
て示している。FIG. 2 shows another embodiment of the CVD apparatus according to the present invention. It is to be noted that the same parts as those in the embodiment of FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. In FIG. 2, the vacuum vessel 1 in FIG.
1, the heat insulating material 16, the heater 17, the container 18 and the like are omitted.
【００２８】このＣＶＤ装置では、第１支軸２０が、第
２支軸２１の外周を囲む筒状をなしており、支軸２０、
２１が多重軸（この実施形態の場合２重軸）となってい
る。第１支軸２０には同じく筒状をなす連結軸２３が連
接され、この連結軸２３の上端に第１支持具２４が取付
けられている。また、第２支軸２１には連結軸２５が連
接され、連結軸２５の上端に第２支持具２６が取付けら
れている。前記実施形態と同様に、第１支持具２４には
支持ピン２７が突設され、第２支持具２６には支持ピン
２８が突設されている。In this CVD apparatus, the first support shaft 20 has a cylindrical shape surrounding the outer periphery of the second support shaft 21.
Reference numeral 21 denotes a multiple axis (a double axis in this embodiment). The first support shaft 20 is also connected to a connection shaft 23 having a cylindrical shape, and a first support 24 is attached to an upper end of the connection shaft 23. A connecting shaft 25 is connected to the second support shaft 21, and a second support 26 is attached to an upper end of the connecting shaft 25. As in the above embodiment, the first support 24 has a support pin 27 projecting therefrom, and the second support 26 has a support pin 28 projecting therefrom.
【００２９】第１支軸２０は、真空容器１１の底壁を貫
通し、その接触部分に前述したようなシール材が介装さ
れている。第２支軸２１は第１支軸２０の内部に入って
いるので、真空容器１１の底壁を貫通する孔は一つです
み、真空容器１１の底壁との間で気密性を保持するため
のシール材は上記の１箇所だけですむ。ただし、第１支
軸２０の内周と第２支軸２１の外周との間には、図示し
ないシール材が介装されている。The first support shaft 20 penetrates the bottom wall of the vacuum vessel 11, and the above-mentioned sealing material is interposed at the contact portion. Since the second support shaft 21 is inside the first support shaft 20, only one hole penetrating the bottom wall of the vacuum vessel 11 is required, and airtightness is maintained between the second support shaft 21 and the bottom wall of the vacuum vessel 11. Only one of the above sealing materials is required. However, a sealing material (not shown) is interposed between the inner circumference of the first support shaft 20 and the outer circumference of the second support shaft 21.
【００３０】更に、第２支軸２１の基端には、昇降装置
３０が取付けられている。この昇降装置３０としては、
前述したような公知の各種駆動手段が採用できる。昇降
装置３０は、第２支軸２１を軸方向（矢印Ａ方向）に移
動させて第２支持具２６を昇降動作させる。Further, an elevating device 30 is attached to the base end of the second support shaft 21. As the lifting device 30,
Various known driving means as described above can be employed. The elevating device 30 moves the second support shaft 21 in the axial direction (the direction of arrow A) to move the second support 26 up and down.
【００３１】この実施形態では、第１支軸２０と同軸に
配置された第２支軸２１を、昇降装置３０によって上方
に移動させることにより、第２支軸２１に連結軸２５を
介して取付けられた第２支持具２６が上昇する。その結
果、第１支軸２０に連結軸２３を介して取付けられた第
１支持具２４の支持ピン２７よりも、第２支持具２６の
支持ピン２８の方が上方に突出し、ワークＷは、支持ピ
ン２７に支持された状態から支持ピン２８に移し変えら
れて上昇し、支持ピン２７がワークＷの底面から離れる
ようになっている。In this embodiment, the second support shaft 21 arranged coaxially with the first support shaft 20 is moved upward by the elevating device 30 so as to be mounted on the second support shaft 21 via the connection shaft 25. The second support 26 thus moved up. As a result, the support pin 28 of the second support 26 protrudes upward from the support pin 27 of the first support 24 attached to the first support shaft 20 via the connection shaft 23, and the work W The support pin 27 is transferred from the state supported by the support pin 27 to the support pin 28 and rises, so that the support pin 27 is separated from the bottom surface of the work W.
【００３２】図３には、本発明によるＣＶＤ装置の更に
他の実施形態が示されている。なお、図１の実施形態と
実質的に同一部分には同符合を付してその説明を省略す
ることにする。また、図３では、図２と同様に、図１に
おける真空容器１１、断熱材１６、加熱ヒータ１７、容
器１８等は省略して示している。FIG. 3 shows still another embodiment of the CVD apparatus according to the present invention. It is to be noted that the same parts as those in the embodiment of FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. Also, in FIG. 3, as in FIG. 2, the vacuum vessel 11, the heat insulating material 16, the heater 17, the vessel 18, and the like in FIG. 1 are omitted.
【００３３】この実施形態は、基本的には、図２の実施
形態と同じ構造をなしている。すなわち、第１支軸２０
が筒状をなし、この第１支軸２０の内側に第２支軸２１
が同軸的に配置されている。ただし、この実施形態の場
合、第２支軸２１の外周２１ａにはスプラインが形成さ
れ、第１支軸２０の内周２０ａには同スプラインが嵌合
するスプライン溝が形成されている。This embodiment has basically the same structure as the embodiment of FIG. That is, the first support shaft 20
Has a cylindrical shape, and a second support shaft 21 is provided inside the first support shaft 20.
Are coaxially arranged. However, in the case of this embodiment, a spline is formed on the outer periphery 21 a of the second support shaft 21, and a spline groove in which the spline fits is formed on the inner periphery 20 a of the first support shaft 20.
【００３４】そして、第２支軸２１の下端には、第２支
軸２１を図３中の矢印Ａ方向に昇降動作させると共に、
第２支軸２１を図３中の矢印Ｂで示すように回転させる
昇降回転装置３１が取付けられている。At the lower end of the second support shaft 21, the second support shaft 21 is moved up and down in the direction of arrow A in FIG.
An elevating and rotating device 31 for rotating the second support shaft 21 as shown by an arrow B in FIG. 3 is attached.
【００３５】その結果、第２支軸２１は、昇降回転装置
３１により、図３中の矢印Ａで示すように、第１支軸２
０に対して軸方向に移動可能とされると共に、図３中の
矢印Ｂで示すように回転する。そして、第２支軸２１が
回転すると、第２支軸２１に対してスプライン嵌合して
いる第１支軸２０も回転し、第１支軸２０、第２支軸２
１に連結軸２３、２５を介して取付けられた第１支持具
２４、第２支軸２６も回転する。As a result, the second support shaft 21 is moved by the lifting / lowering rotating device 31 as shown by the arrow A in FIG.
It is movable in the axial direction with respect to 0, and rotates as shown by the arrow B in FIG. When the second support shaft 21 rotates, the first support shaft 20 spline-fitted to the second support shaft 21 also rotates, and the first support shaft 20 and the second support shaft 2 are rotated.
The first support 24 and the second support shaft 26, which are attached to the device 1 via the connection shafts 23 and 25, also rotate.
【００３６】したがって、ＣＶＤコーティング中に第１
支持具２４及び第２支軸２６を回転させて、ワークＷを
回転させることができ、それによってＣＶＤ膜厚の均一
化を図ることができる。なお、第１支軸２０と第２支軸
２１とは、軸方向に相対移動可能で、回転時には一体に
回転する構造とされればよく、上記のようなスプライン
嵌合の他、キーとキー溝からなる嵌合等であってもよ
い。Therefore, during the CVD coating, the first
By rotating the support 24 and the second support shaft 26, the work W can be rotated, and thereby the CVD film thickness can be made uniform. In addition, the first support shaft 20 and the second support shaft 21 may be configured to be relatively movable in the axial direction and to rotate integrally with each other when rotating. Fitting or the like consisting of a groove may be used.
【００３７】また、１つのＣＶＤ炉内に配置する各支軸
及び支持具のセットは、必ずしも１組である必要はな
く、ＣＶＤ炉の大きさや、ワークＷの大きさによって
は、複数組のセットを配置して、複数個のワークを同時
に処理することもできる。Further, the set of the spindles and the supporting members arranged in one CVD furnace is not necessarily one set, and a plurality of sets may be set depending on the size of the CVD furnace and the size of the work W. And a plurality of workpieces can be processed simultaneously.
【００３８】[0038]
【実施例】実施例１ 図１のＣＶＤ装置を用いて、Ｓｉを含浸したＳｉＣ質焼
結体からなるワークＷのＣＶＤコーティングを行った。
すなわち、第２支軸２１、連結軸２５、第２支持具２６
を下降させた状態で、第１支持具２４の支持ピン２７上
にワークＷを設置し、蓋体１４を閉めて真空容器１１内
を密閉する。EXAMPLE 1 Using the CVD apparatus shown in FIG. 1, a workpiece W made of a SiC sintered body impregnated with Si was subjected to CVD coating.
That is, the second support shaft 21, the connection shaft 25, and the second support 26
Is lowered, the work W is set on the support pins 27 of the first support 24, the lid 14 is closed, and the inside of the vacuum vessel 11 is sealed.
【００３９】この状態で、加熱ヒータ１７により昇温さ
せ、所定の温度に達してから、一定時間ＣＶＤ−ＳｉＣ
コーティングを行った後、昇降装置２９により第２支軸
２１、連結軸２５、第２支持具２６を上昇させ、第２支
持具２６の支持ピン２８を、第１支持具２４の支持ピン
２７上に突出させて、ワークＷを支持ピン２８で支持さ
せる。その結果、ワークＷ下面の支持ピン２７に当接し
ていた部分が、支持ピン２７から離れるので、その部分
にもＣＶＤコーティングを施すことができる。In this state, the temperature is raised by the heater 17 and reaches a predetermined temperature.
After the coating, the second support shaft 21, the connection shaft 25, and the second support 26 are raised by the elevating device 29, and the support pins 28 of the second support 26 are placed on the support pins 27 of the first support 24. , And the work W is supported by the support pins 28. As a result, the portion of the lower surface of the work W that has been in contact with the support pin 27 is separated from the support pin 27, so that the portion can also be subjected to CVD coating.
【００４０】この状態で、同時間コーティングした後、
昇降装置２９により第２支軸２１、連結軸２５、第２支
持具２６を下降させ、第１支持具２４でワークＷを保持
する元の状態にもどした。In this state, after coating for the same time,
The second support shaft 21, the connection shaft 25, and the second support 26 were lowered by the elevating device 29, and returned to the state where the work W was held by the first support 24.
【００４１】こうした動作をＣＶＤ−ＳｉＣコーティン
グ時に数回繰り返した後、ＣＶＤ炉を冷却させ、ほぼ室
温になったところでワークＷを取出した。その結果、ワ
ークＷの下面には、支持具２４、２６の支持ピン２７、
２８と接触した箇所に、支持された痕跡はみられなかっ
た。また、ワークＷを弗硝酸液に浸漬させて耐食性を確
認したが、ワークＷの表面に変化は見られなかった。After repeating such an operation several times during the CVD-SiC coating, the CVD furnace was cooled, and when the temperature reached approximately room temperature, the work W was taken out. As a result, on the lower surface of the work W, the support pins 27 of the support tools 24, 26,
No trace of support was seen at the point of contact with 28. Further, the work W was immersed in a hydrofluoric acid solution to check the corrosion resistance, but no change was observed on the surface of the work W.
【００４２】比較例１ 実施例１において、ＣＶＤ−ＳｉＣコーティング時に、
昇降装置２９を作動せず、第１支持具２４の支持ピン２
７でワークＷを保持した状態を継続した他は、実施例１
と同条件でＣＶＤ炉を運転した。ＣＶＤ炉冷却後、ワー
クＷを取出したところ、下面には支持ピン２７と接触し
た箇所に痕跡が残っており、その部分にＣＶＤコーティ
ングされていなかった。そして、ワークＷを弗硝酸液に
浸漬させたところ、痕跡のあった箇所のＳｉが侵食され
ていた。Comparative Example 1 In Example 1, at the time of CVD-SiC coating,
The lifting device 29 is not operated, and the support pin 2 of the first support 24 is
7 except that the state of holding the workpiece W was continued in Example 1.
The CVD furnace was operated under the same conditions as described above. After cooling the CVD furnace, when the workpiece W was taken out, traces were left on the lower surface at a position in contact with the support pins 27, and the part was not coated with the CVD. Then, when the work W was immersed in the hydrofluoric acid solution, Si at the traced portion was eroded.
【００４３】実施例２ 図２のＣＶＤ装置を用いて、Ｓｉを含浸したＳｉＣ質焼
結体からなるワークＷのＣＶＤコーティングを行った。
すなわち、第２支軸２１、連結軸２５、第２支持具２６
を下降させた状態で、第１支持具２４の支持ピン２７上
にワークＷを設置し、蓋体を閉めて真空容器内を密閉す
る。Example 2 Using the CVD apparatus shown in FIG. 2, a workpiece W made of a SiC sintered body impregnated with Si was subjected to CVD coating.
That is, the second support shaft 21, the connection shaft 25, and the second support 26
Is lowered, the work W is placed on the support pins 27 of the first support 24, the lid is closed, and the inside of the vacuum vessel is sealed.
【００４４】この状態で、ヒータにより昇温させ、所定
の温度に達してから、一定時間ＣＶＤ−ＳｉＣコーティ
ングを行った後、昇降装置３０により第２支軸２１、連
結軸２５、第２支持具２６を上昇させ、第２支持具２６
の支持ピン２８を、第１支持具２４の支持ピン２７上に
突出させて、ワークＷを支持ピン２８で支持させる。そ
の結果、ワークＷ下面の支持ピン２７に当接していた部
分が、支持ピン２７から離れるので、その部分にもＣＶ
Ｄコーティングを施すことができる。In this state, the temperature is raised by a heater, and after reaching a predetermined temperature, CVD-SiC coating is performed for a predetermined time, and then the second support shaft 21, the connecting shaft 25, the second support 26, and the second support 26
Is projected above the support pin 27 of the first support tool 24, and the work W is supported by the support pin 28. As a result, the portion of the lower surface of the work W that has been in contact with the support pin 27 is separated from the support pin 27, and the CV
A D coating can be applied.
【００４５】この状態で、同時間コーティングした後、
昇降装置２９により第２支軸２１、連結軸２５、第２支
持具２６を下降させ、第１支持具２４でワークＷを保持
する元の状態にもどした。In this state, after coating for the same time,
The second support shaft 21, the connection shaft 25, and the second support 26 were lowered by the elevating device 29, and returned to the state where the work W was held by the first support 24.
【００４６】こうした動作をＣＶＤ−ＳｉＣコーティン
グ時に数回繰り返した後、ＣＶＤ炉を冷却させ、ほぼ室
温になったところでワークＷを取出した。その結果、ワ
ークＷの下面には、支持具２４、２６の支持ピン２７、
２８と接触した箇所に、支持された痕跡はみられなかっ
た。また、ワークＷを弗硝酸液に浸漬させて耐食性を確
認したが、ワークＷの表面に変化は見られなかった。After the above operation was repeated several times during the CVD-SiC coating, the CVD furnace was cooled, and the work W was taken out when the temperature reached approximately room temperature. As a result, on the lower surface of the work W, the support pins 27 of the support tools 24, 26,
No trace of support was seen at the point of contact with 28. In addition, the work W was immersed in a hydrofluoric acid solution to check the corrosion resistance, but no change was observed on the surface of the work W.
【００４７】実施例３ 図３のＣＶＤ装置を用いて、Ｓｉを含浸したＳｉＣ質焼
結体からなるワークＷのＣＶＤコーティングを行った。
すなわち、第２支軸２１、連結軸２５、第２支持具２６
を下降させた状態で、第１支持具２４の支持ピン２７上
にワークＷを設置し、蓋体を閉めて真空容器内を密閉す
る。Example 3 Using a CVD apparatus shown in FIG. 3, a workpiece W made of a SiC sintered body impregnated with Si was subjected to CVD coating.
That is, the second support shaft 21, the connection shaft 25, and the second support 26
Is lowered, the work W is placed on the support pins 27 of the first support 24, the lid is closed, and the inside of the vacuum vessel is sealed.
【００４８】この状態で、ヒータにより昇温させ、所定
の温度に達してから、昇降回転装置３１により第２支軸
２１を図中矢印Ｂで示すように回転させながら、一定時
間ＣＶＤ−ＳｉＣコーティングを行った。なお、第２支
軸２１を回転させると、それとスプライン嵌合する第１
支軸２０も回転し、それらに連結軸２３、２５を介して
取付けられた第１支持具２４、第２支持具２６も一体に
回転し、ワークＷが回転する。In this state, the temperature is raised by the heater to reach a predetermined temperature. Then, while the second support shaft 21 is rotated by the raising / lowering rotating device 31 as shown by the arrow B in FIG. Was done. When the second support shaft 21 is rotated, the first support shaft 21 is spline-fitted therewith.
The support shaft 20 also rotates, and the first support 24 and the second support 26 attached thereto via the connection shafts 23 and 25 also rotate integrally, and the work W rotates.
【００４９】こうして一定時間ＣＶＤ−ＳｉＣコーティ
ングを行った後、昇降回転装置３１により第２支軸２
１、連結軸２５、第２支持具２６を上昇させ、第２支持
具２６の支持ピン２８を、第１支持具２４の支持ピン２
７上に突出させて、ワークＷを支持ピン２８で支持させ
る。その結果、ワークＷ下面の支持ピン２７に当接して
いた部分が、支持ピン２７から離れるので、その部分に
もＣＶＤコーティングを施すことができる。After the CVD-SiC coating is performed for a predetermined time in this manner, the second support shaft 2 is
1. The connecting shaft 25 and the second support 26 are raised, and the support pin 28 of the second support 26 is replaced with the support pin 2 of the first support 24.
7, the work W is supported by the support pins 28. As a result, the portion of the lower surface of the work W that has been in contact with the support pin 27 is separated from the support pin 27, so that the portion can also be subjected to CVD coating.
【００５０】この状態で同様にワークＷを回転させなが
ら同時間コーティングした後、昇降回転装置３１により
第２支軸２１、連結軸２５、第２支持具２６を下降さ
せ、第１支持具２４でワークＷを保持する元の状態にも
どした。In this state, after the work W is similarly coated while rotating the work W for the same time, the second support shaft 21, the connecting shaft 25 and the second support 26 are lowered by the elevating and rotating device 31, and the first support 24 is used. The state where the work W was held was returned to the original state.
【００５１】こうした動作をＣＶＤ−ＳｉＣコーティン
グ時に数回繰り返した後、昇降回転装置３１によるワー
クＷの回転を停止し、ＣＶＤ炉を冷却させ、ほぼ室温に
なったところでワークＷを取出した。After this operation was repeated several times during the CVD-SiC coating, the rotation of the work W by the elevating and rotating device 31 was stopped, the CVD furnace was cooled, and the work W was taken out when the temperature reached approximately room temperature.
【００５２】その結果、ワークＷの下面には、支持具２
４、２６の支持ピン２７、２８と接触した箇所に、支持
された痕跡はみられず、より均一にＣＶＤコーティング
されていた。また、ワークＷを弗硝酸液に浸漬させて耐
食性を確認したが、ワークＷの表面に変化は見られなか
った。As a result, the support 2 is placed on the lower surface of the work W.
No trace of the support was found in the portions of the support pins 4 and 26 that came into contact with the support pins 27 and 28, and the coating was more uniformly coated by CVD. In addition, the work W was immersed in a hydrofluoric acid solution to check the corrosion resistance, but no change was observed on the surface of the work W.
【００５３】[0053]
【発明の効果】本発明によれば、操作を途中で中断しな
くてもワーク全面にＣＶＤコーティングすることが出来
る。したがって、ワーク支持部を変えるため一旦炉を冷
却し、炉内を室温にもどして支持位置をずらして再度、
同様な工程を繰り返す必要がなく、生産量が約２倍に増
え、コスト削減効果が大である。According to the present invention, CVD coating can be performed on the entire surface of a work without interrupting the operation. Therefore, cool the furnace once to change the workpiece support, return the furnace to room temperature, shift the support position,
There is no need to repeat the same steps, the production amount is increased about twice, and the cost reduction effect is great.
【図１】 本発明によるＣＶＤ装置の一実施形態を示す
断面図FIG. 1 is a sectional view showing an embodiment of a CVD apparatus according to the present invention.
【図２】 本発明によるＣＶＤ装置の他の実施形態を示
す要部断面図FIG. 2 is a sectional view of a main part showing another embodiment of the CVD apparatus according to the present invention.
【図３】 本発明によるＣＶＤ装置の更に他の実施形態
を示す要部断面図FIG. 3 is a sectional view of a main part showing still another embodiment of the CVD apparatus according to the present invention.
１１：真空容器 １２：周壁 １３：底壁 １４：蓋体 １５：シールリング １６：断熱材 １７：加熱ヒータ １８：容器 ２０：第１支軸 ２１：第２支軸 ２２：シール材 ２３：連結軸 ２４：第１支持具 ２５：連結軸 ２６：第２支持具 ２７、２８：支持ピン ２９、３０：昇降装置 ３１：昇降回転装置 Ｗ：ワーク 11: Vacuum container 12: Peripheral wall 13: Bottom wall 14: Lid 15: Seal ring 16: Heat insulating material 17: Heater 18: Container 20: First support shaft 21: Second support shaft 22: Seal material 23: Connection shaft 24: first support 25: connecting shaft 26: second support 27, 28: support pins 29, 30: lifting device 31: lifting rotating device W: work
Claims (6)
ーティングする方法において、ワークに対して当接位置
が異なる少なくとも２組の支持具でワークを支持可能と
し、コーティング中におけるワークの支持を前記少なく
とも２組の支持具で交互に行うことを特徴とするＣＶＤ
コーティング方法。1. A method of arranging a work in a CVD furnace and performing CVD coating, wherein the work can be supported by at least two sets of support tools having different contact positions with respect to the work, and the work is supported during coating. CVD alternately performed by at least two sets of supports
Coating method.
の支持具に対し、他の支持具を昇降可能に配置し、コー
ティング中に他の支持具を上昇させてワークの支持を交
代させる請求項１記載のＣＶＤコーティング方法。2. A method according to claim 1, further comprising: arranging another supporting member so as to be able to move up and down with respect to a specific supporting member of the at least two sets of supporting members. Item 7. The CVD coating method according to Item 1.
てワークを回転させる請求項１又は２記載のＣＶＤコー
ティング方法。3. The CVD coating method according to claim 1, wherein the workpiece is rotated by rotating the support during coating.
らなるＣＶＤ炉と、このＣＶＤ炉の底壁を貫通して気密
的に挿入された複数の支軸と、これらの支軸の前記ＣＶ
Ｄ炉内に配置された部分にそれぞれ取付けられた支持具
とを備え、前記支軸の特定のものに対して他の支軸が昇
降可能とされ、前記特定の支軸に取付けられた前記支持
具にワークを支持させた状態から、前記他の支軸を介し
て該支軸に取付けられた支持具を上昇させることにより
ワークの支持を交代させるようにしたことを特徴とする
ＣＶＤ装置。4. A CVD furnace comprising a vacuum vessel provided with a heat insulating material and a heater, a plurality of spindles which are hermetically inserted through a bottom wall of the CVD furnace, and said CV of said spindles.
A supporting member attached to a portion disposed in the D furnace, wherein another supporting shaft can be moved up and down with respect to a specific one of the supporting shafts, and the supporting member attached to the specific supporting shaft is provided. A CVD apparatus characterized in that the support of the work is changed by raising a support attached to the support shaft via the other support shaft from a state where the work is supported by the tool.
重軸からなる請求項４記載のＣＶＤ装置。5. The CVD apparatus according to claim 4, wherein said plurality of support shafts comprise multiple shafts arranged concentrically.
機構を備えた請求項５記載のＣＶＤ装置。6. The CVD apparatus according to claim 5, further comprising a rotation mechanism for integrally rotating the plurality of spindles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34850098A JP4110646B2 (en) | 1998-12-08 | 1998-12-08 | CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34850098A JP4110646B2 (en) | 1998-12-08 | 1998-12-08 | CVD equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000178743A true JP2000178743A (en) | 2000-06-27 |
| JP2000178743A5 JP2000178743A5 (en) | 2005-05-19 |
| JP4110646B2 JP4110646B2 (en) | 2008-07-02 |
Family
ID=18397436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34850098A Expired - Lifetime JP4110646B2 (en) | 1998-12-08 | 1998-12-08 | CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4110646B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006089819A (en) * | 2004-09-27 | 2006-04-06 | Toshiba Ceramics Co Ltd | Cvd coating method and cvd coating device |
| CN103103490A (en) * | 2013-01-30 | 2013-05-15 | 北京丹鹏表面技术研究中心 | Annular component supporting mechanism capable of alternatively switching supporting point in rotation |
| CN106181784A (en) * | 2016-07-18 | 2016-12-07 | 青岛永禾源精工有限公司 | A kind of Special Automatic sand blasting unit of tire-mold |
| JP2019151898A (en) * | 2018-03-05 | 2019-09-12 | イビデン株式会社 | Support mechanism of cvd device, manufacturing method of ceramic coating, and cvd device |
| JP2019206751A (en) * | 2018-05-23 | 2019-12-05 | 信越化学工業株式会社 | Chemical vapor deposition apparatus and coating film forming method |
| JP2020502366A (en) * | 2016-12-20 | 2020-01-23 | トーカイ カーボン コリア カンパニー．，リミテッド | Method and apparatus for manufacturing semiconductor manufacturing parts using jig |
-
1998
- 1998-12-08 JP JP34850098A patent/JP4110646B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006089819A (en) * | 2004-09-27 | 2006-04-06 | Toshiba Ceramics Co Ltd | Cvd coating method and cvd coating device |
| CN103103490A (en) * | 2013-01-30 | 2013-05-15 | 北京丹鹏表面技术研究中心 | Annular component supporting mechanism capable of alternatively switching supporting point in rotation |
| CN106181784A (en) * | 2016-07-18 | 2016-12-07 | 青岛永禾源精工有限公司 | A kind of Special Automatic sand blasting unit of tire-mold |
| JP2020502366A (en) * | 2016-12-20 | 2020-01-23 | トーカイ カーボン コリア カンパニー．，リミテッド | Method and apparatus for manufacturing semiconductor manufacturing parts using jig |
| US11367612B2 (en) | 2016-12-20 | 2022-06-21 | Tokai Carbon Korea Co., Ltd | Method and apparatus for manufacturing semiconductor manufacturing parts by using jig |
| JP7402046B2 (en) | 2016-12-20 | 2023-12-20 | トーカイ カーボン コリア カンパニー．，リミテッド | Manufacturing method and device for semiconductor manufacturing parts using a jig |
| JP2019151898A (en) * | 2018-03-05 | 2019-09-12 | イビデン株式会社 | Support mechanism of cvd device, manufacturing method of ceramic coating, and cvd device |
| JP2019206751A (en) * | 2018-05-23 | 2019-12-05 | 信越化学工業株式会社 | Chemical vapor deposition apparatus and coating film forming method |
| JP7321768B2 (en) | 2018-05-23 | 2023-08-07 | 信越化学工業株式会社 | Chemical vapor deposition apparatus and film forming method |
| US11885022B2 (en) | 2018-05-23 | 2024-01-30 | Shin-Etsu Chemical Co., Ltd. | Method of forming a film on a substrate by chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4110646B2 (en) | 2008-07-02 |
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