JP2564166Y2 - Surface treatment equipment - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus having a reaction furnace for heating a semiconductor wafer.

[0002]

2. Description of the Related Art A conventional technique will be described below with reference to the drawings.

In FIG. 3, reference numeral 10 denotes a furnace body of a vertical reaction furnace, 11 denotes a heater, and 12 denotes a quartz tube serving as a reaction tube. And
A flange 12A protruding radially outward is formed at the opening end below the axis. Reference numeral 13 denotes a circular cap having a cooling chamber A in which cooling water circulates, and a seal groove 15 having a dovetail-shaped cross section over a circumference of a predetermined radius on the upper surface 13a. Is formed. Reference numeral 16 denotes a seal ring, which is fitted into the seal groove 15 of the cap 13 and is opposed to the flange portion 12A of the quartz tube 12 so as to be able to abut.

A lift 17 has a plurality of holes 18 penetrating in the axial direction of the quartz tube 12 at predetermined intervals in the circumferential direction, and a receiving member inserted from below the axis of each hole 18. The support member 21 is urged toward the quartz tube 12 by a spring 20 received by the member 19. Cap 1
3 is mounted on a support member 21 of the lift 17, and an assembly including the cap 13 and the lift 17 is
The elevator 22 allows the quartz tube 12 to move up and down in the axial direction.

[0005] Reference numeral 23 denotes a gas supply pipe for supplying a processing fluid into the quartz tube 12, which is open at the upper end of the quartz tube 12. 24 semiconductor wafers W _P and dummy being surface treated -
Wafer W _D and filler - wafer W _F with bets - (hereinafter, the semiconductor wafer W _P and dummy - wafer W _D and filler - are collectively wafer W _F, simply referred to as wafer W) volume for holding a large number of progressively Then, it is loaded on the cap 13. In addition,
The ring 16 is made of a member having excellent corrosion resistance.

In this configuration, the elevator 22 moves the boat 24 from the transfer device (not shown) onto the cap 13 and rises, and carries the boat 24 into the quartz tube 12. At this time, the seal ring 16 elastically abuts on the flange portion 12A of the quartz tube 12 to make the inside of the quartz tube 12 airtight. Then, a processing fluid is supplied from the gas supply pipe 23 into the quartz pipe 12, and the wafer W is exposed to a high-temperature processing fluid, whereby an oxidation diffusion process is performed.

Next, when a predetermined time has elapsed, the elevator
The lifting table 17 is lowered to the original position by the rotor 22, and the boat 24 is transferred to another place by the transfer device, and the wafer W subjected to the oxidation diffusion treatment is taken out of the boat 24. Then, the wafer W before processing is transferred to the boat 24.

[0008]

In this conventional surface treatment apparatus, the cap may be made of quartz in order to prevent corrosion by the processing fluid, but the opening of the reaction tube is hermetically sealed on the cap surface. A seal ring for closing must be installed, and there is a problem that it is difficult to machine a dovetail-shaped seal ring mounting groove because the quartz member is hard and brittle. .

The present invention has been made to solve this problem, and an object of the present invention is to provide a surface treatment apparatus that can easily and easily provide a cap with corrosion resistance.

[0010]

In order to achieve the above object, in the surface treatment apparatus of the present invention, a reaction furnace, a reaction tube provided in the reaction furnace, a cap, and a cap provided on the cap are provided. A seal ring fitted in the groove, a supply pipe opened into the reaction tube to supply a processing fluid, a boat holding a semiconductor wafer to be subjected to surface treatment, and a predetermined position in the reaction tube. A surface treatment apparatus for carrying out surface treatment of the semiconductor wafer by hermetically sealing the inside of the reaction tube into which the processing fluid has flowed from the supply tube with the cap and the seal ring. The cap is covered with an annular body and a cover made of a quartz plate fitted to the annular body, and a notch groove is formed in a peripheral portion of the plate body on the reaction tube side. The notched groove is between the inner circumference of the ring Sheet - characterized by partitioning the Luling mounting groove.

[0011]

In the above-described surface treatment apparatus of the present invention, the surface of the cap on the reaction tube side is covered with a cover made of a quartz plate and a ring into which the plate is fitted, so that corrosion by the treatment fluid is prevented. The seal ring mounting groove can be formed by both a quartz plate and a ring.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram showing a surface treatment apparatus of the present embodiment. FIG. 2 is an enlarged view of a main part showing the surface treatment apparatus of the present embodiment.

In both figures, the cap 13 has a large diameter portion 1.
3A and a small-diameter portion 13B extending from the large-diameter portion 13A to the quartz tube 12 with a reduced diameter.
3A, the upper surface 1 is sequentially spaced at predetermined intervals in the circumferential direction.
A plurality of screw holes 13C extending downward from the axis 3a are provided.

Reference numeral 30 denotes a plate made of quartz and having a predetermined thickness.
The cap 13 has the same diameter as the small diameter portion 13B, and has a notch groove 31 formed in the upper peripheral portion thereof.

Reference numeral 35 denotes an annular body which has a height greater than the thickness of the plate 30 and is closely fitted to the small-diameter portion 13B of the cap 13 and is screwed into the screw hole 13C from the screw through hole 36. The cap 13 is fixed to the cap 13 with a plurality of screws, and a taper projection 37 is formed on the inner peripheral surface at the upper end. The taper projection 37 is a taper projection whose diameter decreases as it approaches the upper end side.

The ring 35 is formed by attaching the plate 30 to the cap 13.
Is mounted on the small diameter portion 13B, and the seal ring 16 is fitted into the notch groove 31, and then mounted on the cap 13 as described above. In this mounting state, the taper projection 37 and the notch groove 31 form a dovetail-shaped seal ring mounting groove 38,
The seal ring 16 is pressed into the seal ring mounting groove 38, and the plate body 30 is pressed onto the cap 13 by the ring body 35 via the seal ring 16, and moves in the radial and circumferential directions. Is blocked.

Others have the same configuration as the configuration shown in the prior art.

The ring 35 in the above embodiment is merely an example. In order to lower the temperature of the seal ring 16, a structure is provided in which a passage through which cooling water circulates is formed on the outer peripheral surface of the ring. It may be one that has been made.

[0020]

As described above in detail, according to the surface treatment apparatus of the present invention, the surface of the metal cap on the side of the reaction tube is formed of a quartz plate and a ring in which the plate is fitted. Since it is covered with a cover, corrosion by the processing fluid can be prevented.
The quartz plate body is provided with a notch groove that is easy to process and the seal ring mounting groove is formed on both the quartz plate body and the ring body, so that the above corrosion of the cap is easily and easily prevented. The effect can be obtained and it is extremely practical.

Further, since the quartz plate is pressed against the cap side via the seal ring by the ring, the quartz plate does not move to the reaction tube side, and the positioning is assured.
The displacement of the boat placed on the quartz plate is reduced.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a surface treatment apparatus as one embodiment of the present invention.

FIG. 2 is an enlarged view showing a seal ring holding structure in FIG. 1;

FIG. 3 is a longitudinal sectional view showing a surface treatment apparatus as a conventional technique.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Reactor 12 Quartz tube (reaction tube) 13 Cap 15 Seal groove 16 Seal ring 22 Elevator 23 Supply pipe 24 Boat 30 Plate 31 Notch groove 35 Ring 38 Seal ring mounting groove

Claims (1)

(57) [Scope of request for utility model registration] 1. A reaction furnace, a reaction tube provided in the reaction furnace, a cap, a seal ring fitted in a groove provided in the cap, and an opening in the reaction tube for supplying a processing fluid. A supply pipe, a boat for holding a semiconductor wafer to be surface-treated, and an elevator for loading and unloading the boat to and from a predetermined position in the reaction tube, wherein a processing fluid flows in from the supply pipe A surface treatment apparatus for performing surface treatment of the semiconductor wafer by hermetically sealing the inside of the reaction tube with the cap and the seal ring, wherein the cap is formed of an annular body, and a quartz body fitted to the annular body. The plate is covered with a cover, and a notch groove is formed in a peripheral portion on the reaction tube side of the plate, and the notch groove defines a seal ring mounting groove between the ring and the inner periphery. A surface treatment apparatus characterized in that: