TWI225931B - Forming method of probes for testing wafer or chip - Google Patents

Forming method of probes for testing wafer or chip Download PDF

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Publication number
TWI225931B
TWI225931B TW92109547A TW92109547A TWI225931B TW I225931 B TWI225931 B TW I225931B TW 92109547 A TW92109547 A TW 92109547A TW 92109547 A TW92109547 A TW 92109547A TW I225931 B TWI225931 B TW I225931B
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Taiwan
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wire
wafer
probe
wire material
electrolytic
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TW92109547A
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Chinese (zh)
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TW200305022A (en
Inventor
Jia-Lung Guo
Jr-Shiang You
Jiun-De Huang
Ji-Lung Li
Jeng-Shian Juang
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Pointech Prec Co Ltd
Jia-Lung Guo
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Abstract

The purpose of the present invention is to provide the manufacturing method of the probe for testing wafer (chip). The manufacturing procedures at least contain the following steps: straightening and cutting the prepared wire material after it is heated by resistive element; and using the electroplating manner to form the wire material, in which electroplating treatment is performed onto the front end of wire diameter of the wire material and is followed by sharpening the front end of wire diameter of the wire material to form a sharp taper after straightening and cutting the wire material suitable for use in wafer (chip) test such as tungsten, beryllium copper, tungsten containing rhenium and palladium. In the electroplating method, plural preset wire materials are set as the anode electrode and are placed into an electroplating tank having the electrolyte. The bottom end face in the electroplating tank is provided with at least one metal plate that is set as the cathode electrode. After that, each wire material is placed stably in the electrolyte to make the preset wire material generate anodic dissolution, and stably rise after forming sharp taper at the tip terminal of each wire material. In addition, the taper length of each wire material is made capable of obtaining a different taper length depending on the depth of going deep into the liquid. By using the manufacturing method to form the probe for testing wafer (chip), the extremely large effects of increasing the production rate and reducing the production cost can be obtained.

Description

1225931 五、發明說明(1) 【發明所屬之技術領域】 本發明係指一種晶圓(晶片)測試用探針成型方法, 特別是指一種可提升製成速度及降低耗損率之晶圓(晶片 )用探針。 【先前技術】 所謂晶圓(晶片 的接點或晶片内部電 偵讀輸出值。此類型 合晶片或晶圓上之接 對晶圓或晶片作測試 試停止即需進行更換 易故衍生許多設備成 成之技藝作一開創性 法如第一圖所示之申 法之流程般藉以生產 即1、備置線材;2、 以電解削尖成型;4, 狀0 )測試用探針,係一種用來與晶片上 路接觸,以便直接對晶片輸入信號或 探針均由國外廠商掌握及進口,為配 點及電路其精密度需異常精細,故其 時常因操作不當常遭折損破壞致使測 ,故該結構大量耗損且其成形生產不 本者,故發明人今非但對上述探針製 作法,並已經實驗獲得該探針成形方 請人第0 9 1 1 1 9 9 7號發明申請案加工方 該探針結構者,至少包含如下步驟: 高周波加熱后矯直切斷;3、線材施 將線材尖錐頂點作放電加工成圓球 【内容】 (所欲解決之技術問題) 但其上述方法因宥於該加工方法仍未突破可予以大量 生產者,今查該探針加工方法雖得以單一成形且具一優異1225931 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention refers to a method for forming a probe for a wafer (wafer) test, and particularly to a wafer (wafer) that can improve the speed of production and reduce the rate of loss. ) With a probe. [Previous technology] The so-called wafer (the contact point of the wafer or the internal electrical detection output value of the wafer. This type of wafer or wafer-to-wafer or wafer-to-wafer test is required to stop the test and it needs to be replaced. It is easy to derive many equipment into Cheng Zhi's technique is a groundbreaking method, such as the application process shown in the first figure, which is used to produce 1. Prepare the wire; 2. Shape by electrolytic sharpening; 4, Shape 0) Test probe, which is used to Contact with the chip on the road so that the input signals or probes directly to the chip are mastered and imported by foreign manufacturers. The precision of distribution points and circuits needs to be extremely fine, so it is often damaged due to improper operation and damage. The structure has a large amount of wear and its forming production is not original, so the inventor now not only has the probe manufacturing method described above, but has experimentally obtained the probe forming party, and asked the processing party of invention application No. 0 9 1 1 1 9 9 7 The probe structure includes at least the following steps: Straighten and cut after high frequency heating; 3, the wire rod applies the wire tip to the electric arc to form a ball [content] (the technical problem to be solved) Yu processing method due to the break may not be significant number of manufacturers, although this investigation the probe is a single processing method is excellent in a molding and having

第6頁 1225931 五、發明說明(2) 圓弧防損結構者,但因其加工方法生產速度較為緩慢,且 今查業界並非每每皆需要該圓弧結構,且晶圓電路日趨複 雜及各電路排置之間隙更顯狹礙,故顯該尖錐狀仍有其特 殊用途之處,而上述該具圓弧狀探針結構加工繁複,故仍 無法配合大量需求者,故為使大眾得一簡易快速成形並以 能仍降低購置成本需求者。 (解決問題之技術手段) 本發明人利用一真正無障礙開放式槽口電解方法予以 大量形成該探針結構,並藉該可形成多數量探針結購的方 法以一舉降低該探針成本以利電子晶圓(或晶片)業界大 量使用者,即本發明創作,係以利用一高溫加熱方式,使 一適用於晶圓(晶片)線材急速達到適合紅熱之溫度,再 以一切割方式將該線材進行裁剪,經裁剪後之線徑業可成 一筆直之探針基材,而該基材並設由一經電解處理方法使 其前端圓柱體之線徑成為尖錐狀。 (對照先前技術之功效) 本發明創作除以發明第9 1 1 1 9 9 7申請案之加工方式作 為基礎外,即該加工方法係將線材加溫方式改以利用線材 本身電阻作為導電加熱架構,並以線切割作輔助,並可以 夾持裝置以預設大量線材施以加工電解方法:係利用多數 個線材作電解陽極,並令該電解槽内底端面至少設有一層 電解用之陰極金屬板,其後利用其開放槽口可將多數量或Page 6 1225931 V. Description of the invention (2) Those who have a circular arc loss prevention structure, but because of its processing method, the production speed is relatively slow, and the industry does not always need this circular arc structure, and the wafer circuit is becoming more complicated and each circuit The gap of the arrangement is more narrow, so it is obvious that the pointed cone shape still has its special purpose, and the above-mentioned arc-shaped probe structure is complicated to process, so it still cannot meet the needs of a large number of people. Simple and rapid prototyping and those who can still reduce the purchase cost. (Technical means to solve the problem) The present inventor used a truly barrier-free open-slot electrolysis method to form the probe structure in large quantities, and borrowed a method that can form a large number of probes to purchase and reduce the cost of the probe in one fell swoop. A large number of users in the electronic wafer (or wafer) industry, the invention of this invention, uses a high-temperature heating method to make a wire suitable for wafers (wafers) quickly reach a temperature suitable for red heat. The wire is cut, and the wire diameter after cutting can be a straight probe base material, and the base material is set to have a tapered cone diameter by an electrolytic treatment method. (Comparison with the effect of the prior art) Except for the invention based on the processing method of the 9 1 1 1 9 9 7 application, that is, the processing method is to change the heating method of the wire to use the resistance of the wire itself as a conductive heating structure It also uses wire cutting as an aid, and it can hold the device to preset a large number of wires to apply the electrolytic method: it uses most wires as electrolytic anodes, and at least one layer of cathode metal for electrolysis is provided on the inner bottom end surface of the electrolytic tank. Plate, and subsequently use its open notches

第7頁 1225931 五、發明說明(3) 不同長度大小或不同模組化線材可依置入電解液面之深度 使成一具不同長度尖錐狀者;並兼設以設以該電解金屬陰 極板上所設貫穿槽孔及設以支撐裝置將該金屬板接設固定 並提升至液面端或液面適當處,使其成形錐度較完整及快 速者;其並藉以槽口及金屬板設計一次加工可產生數量眾 多探針者,亦可降低對各測試業界成本。 【實施方式】 請配合參閱如第 2至4圖所示,其線材前段備置方 式及方法主要步驟仍如原申請人第091119977申請案般, 故本創作實施步驟流程至少包括如下,即如第一圖所示, 先備置線材後;施以第一步驟:先備置一適當線材(或稱 基材)1予以進行矯直、切斷:其中,由於該備置線材1 特殊(可以設為鎢、含鍊之鎢、鈹銅、鈀),其中,該線 材加溫方式,先就各線材1採用高溫(改採電阻加熱2 ) 加熱成型(見第三圖所示),即係先將線材1設於一開放式 空心管體A内,且於線材1兩側施予張力並以兩導輪B側施 以正、負電極施以通電該線材,並藉由該線材本身電阻產 生一熱能且並以導輪B矯直,而加熱過程中該管體A内並施 加以一惰性氣體C以防止該線材1加熱過程中氧化,其後完 成筆直狀後並以一放電線切割線電極3切斷,如此即使〇 · 1 mm以下之鎢線(線材之一)成形後其平坦度亦能趨近水 平,由於以放電線切割加工係屬一非接觸性切割法不致產 生軸心偏離造成該基材平坦度不佳之疑慮。Page 7 1225931 V. Description of the invention (3) Different lengths or different modular wires can be made into a tapered cone with different lengths according to the depth of the electrolyte surface; and also equipped with the electrolytic metal cathode plate The through slot and the supporting device are used to fix and lift the metal plate to the liquid level end or the appropriate level of the liquid surface, so that the forming taper is more complete and fast; and the slot and the metal plate are designed once. Processing can generate a large number of probes, which can also reduce the cost of each test industry. [Embodiment] Please refer to Figures 2 to 4. The method and method for the preparation of the front section of the wire are still the same as the original applicant's application No. 091119977. Therefore, the process of this creative implementation step includes at least the following, that is, as the first As shown in the figure, first prepare the wire; apply the first step: first prepare an appropriate wire (or substrate) 1 for straightening and cutting: Among them, because the prepared wire 1 is special (can be set to tungsten, containing Chain tungsten, beryllium copper, palladium). Among them, the wire heating method first uses a high temperature (changes to resistance heating 2) for each wire 1 to be thermoformed (see the third picture), that is, the wire 1 is first set. In an open hollow pipe body A, tension is applied to both sides of the wire 1 and positive and negative electrodes are applied to the two guide wheels B sides to energize the wire, and a heat energy is generated by the resistance of the wire itself and paralleled. Straighten with the guide wheel B, and an inert gas C is applied to the tube A during heating to prevent the wire 1 from being oxidized during the heating process. After the straight shape is completed, the wire electrode 3 is cut by a discharge wire. , So even if the tungsten wire below 0.1 mm ( After one sheet) forming its flatness level can also approach, since the discharge wire cutting a metal-based non-contact cutting method without departing from the generating axis of the substrate cause poor flatness concerns.

第8頁 1225931 五、發明說明(4) 第二步驟:可將不同線材1予以雷射焊接或電阻焊 接:適用於單一晶片測試線路,其製成方法是將金屬材質 (鎳、銅)線材(線徑0· 51mm )與鎢質線材(〇· 15mm以下 )利用一雷射焊接或電阻焊接技術以進行接合(如圖示6 第三 將該線材 該線材圓 電解液5 板6 ,以 柱體線材 一圓柱體 尖錐狀頂 不同錐狀 第四 固定物及 而另 式即係將 者,其如 (1) 備 並以相同 基材)1設 (2) 將 内底端面 步驟: 1以電 柱體線 的電解 進行陽 1設作 線材1 點1 0 長度者 步驟: 夾持。 其中, 線材1 圖所示 置一呈 或不同 作為電 至少設 上,並 仍可如申 解削尖成 材1設為 槽4中, 極溶解( 陽極後平 前端經一 者,且該 ,且該尖 將尖錐狀 請人原第0 9 1 1 1 9 9 7 7申請案般係 型··係利用一電解處理方法:將 電解陽極,使 且該槽中設有 如第4圖〜4A圖 穩方式置入電 定時間離開電 尖錐長度可依 錐頂點1 〇可 以下部份施以 其前端放入一充滿 一電解 用陰極金屬 ’而將該圓 面7内,此 所示) 解槽液 解液後即呈現一具 浸入深 小於0. 電鍍處 度不同產生 4m i cron ; 理利於焊接 如第5〜5 C圖所示,本創作另一改變實施方 施以電解成形方法,作一不同生產步驟 該預備線材加工方法為: 開放式槽口8及可置入電解液之電解槽4, 大小之多數量之預備加工用之線材(或稱 極用陽極; 有一層之電解用金屬板6直接設於電解槽4 設為電解用陰極者;Page 8 1225931 V. Description of the invention (4) Second step: different wires 1 can be laser welded or resistance welded: suitable for a single chip test circuit, the method is made by using metal (nickel, copper) wire ( The wire diameter is 0.51mm) and tungsten wire (less than 0.15mm) to be joined by a laser welding or resistance welding technology (as shown in Figure 6) the third wire, the wire, the circular electrolyte, the 5 plate, and the cylinder. The wire rod is a cylinder with a pointed cone-shaped top and a different cone-shaped fourth fixture, and the alternative is the one that is as follows (1) Prepared with the same substrate) 1) Set (2) Steps for the inner end surface: 1) Electric pole The electrolysis of the body wire is performed as a wire 1 point and a length of 10 points. Steps: Clamp. Among them, the wire 1 is shown in the figure or different as the electricity at least, and can still be sharpened into the material 1 as the solution in the slot 4, extremely soluble (the front end of the anode through the one, and the, and the The tip will be tapered like the original No. 0 9 1 1 1 9 9 7 7 application-like type ... Use an electrolytic treatment method: the electrolytic anode is set so that the tank is set as shown in Figure 4 ~ 4A The method is to place the electric cone at a fixed time and leave the length of the electric cone. According to the apex of the cone, the lower part can be put on the front end and placed in a circular surface 7 filled with a cathode metal for electrolysis. After dehydration, a immersion depth of less than 0 is produced. Different plating places produce 4m i cron; It is good for welding as shown in Figure 5 ~ 5C. Another modification of this creative method is to apply electrolytic forming method to make a difference Production steps The method for processing the preliminary wire is: an open slot 8 and an electrolytic cell 4 into which an electrolyte can be placed, and a large number of wires for preliminary processing (or anodes for electrodes; a layer of electrolytic metal plates 6) Set directly in the electrolytic tank 4 as the cathode for electrolysis;

$ 9頁 1225931 五、發明說明(5) (3)並以同時或不同時將多數個預備線(基材) 以平穩方式置入該電解槽4内,並促使該線材1浸入部份設 以呈陽極溶解狀,致該線材得依浸入液面7不同深度及加 工時間長短再予以上昇以得一不同錐狀長度基材者。$ 9 pages 1225931 V. Description of the invention (5) (3) and simultaneously or at the same time, put a plurality of preliminary wires (substrates) into the electrolytic cell 4 in a stable manner, and urge the wire 1 to be immersed in part to set It is in the form of anode dissolution, so that the wire can be immersed in the liquid surface 7 at different depths and processing times and then raised to obtain a substrate with a different tapered length.

故其中,該採設為電解用金屬板6(陰極板)設於電解 槽内底端面係先使槽口 8呈一開放狀,不受槽口 8或陰極板 6設置位置限制,故可供較多數量線材同時加工者,藉以 同一加工時間可形成較多數量探針,使該探針生產成本大 為降低,其加工成形率並大大提升,除有利業界使用,並 有效降低整體生產成本。 而另如第六〜六B圖所示,其中,係先將該電解用金屬 板6(陰極板)係如第五圖所示先設以一懸吊裝置15固定(或 一支撐裝置固定)於液面7内(或恰與液面7平行),並使該 金屬板6上所設數個以上呈貫穿槽孔6 1以配合該預加工備 置之線材1之孔徑及加工數量,並供該線材於該電解槽4開 口槽孔8以垂直上升、下降作電解處理者,藉此該電接金 屬陰極板6上之槽孔6 1設置可得一形狀較穩定及可靠度較 兩線材削尖·成型效果者。Therefore, the metal plate 6 (cathode plate) used for electrolysis is provided on the bottom end surface of the electrolytic cell to make the slot 8 open first, and it is not restricted by the position of the slot 8 or the cathode plate 6, so it can be used for comparison. Those who process a large number of wires at the same time can form a larger number of probes at the same processing time, which greatly reduces the production cost of the probe, and greatly improves the forming rate of the probe, which is beneficial to the industry and effectively reduces the overall production cost. And as shown in Figures 6 to 6B, where the electrolytic metal plate 6 (cathode plate) is first fixed by a suspension device 15 (or a support device) as shown in the fifth figure In the liquid surface 7 (or just parallel to the liquid surface 7), and make more than a plurality of through-slots 61 provided on the metal plate 6 to match the diameter and processing quantity of the pre-processed wire 1 and provide The wire rod is used as an electrolytic treatment in the opening slot 8 of the electrolytic cell 4 to vertically rise and fall, thereby setting the slot hole 6 1 on the electric metal cathode plate 6 to obtain a more stable shape and reliability than that of two wire rods. Sharp-shaped effect.

而其中’另如第六C圖所示,為本創作電解方法另一 實施例,即該電解用金屬陰極板6另可設以一支撐裝置15 固定後(或以懸吊裝置固定)並恰設於該電解槽4液面下沿 端適當處,使線材恰可抵伸至電解槽液面内,亦可使線材 削尖成型。 而另其中,如本創作第二圖及第七圖加工後探針組合Wherein, as shown in FIG. 6C, another embodiment of the electrolytic method of the present invention is that the metal cathode plate 6 for electrolysis may be further fixed by a supporting device 15 (or fixed by a suspension device) and precisely It is set at an appropriate lower end of the liquid surface of the electrolytic cell 4 so that the wire can just reach into the liquid level of the electrolytic cell, and the wire can be sharpened. And the other one, as shown in the second and seventh pictures of the probe assembly after processing

第10頁 1225931 五、發明說明(6) 示意圖所示,為本創作另一實施例所示:其係將一備置線 材1亦經上述步驟二方式予以加熱及矯直切斷後;再依步 驟三,其係將兩不同線徑線材結合如線材1及另一較大線 徑線材1 2後,其後依該步驟三,可將多數個具鎢線材1 圓柱體前端部份進行以本創作上述第五圖〜六C圖所示之電 解程序以製成具尖錐狀探針,故可得本創作具尖錐狀探針 - 結構者。 故由上述成型方法,其中該具圓弧狀探針製作實際形 狀即可如附件一所示,其係以電子顯微鏡放大比例者。 是故綜上所述,本發明晶圓(晶片)測試用探針之成 型方法,係將一備置(例如:鎢、含銖之鎢、鈹銅、鈀)鲁 之線材,其兩側係以一組滾輪通電加熱並作成一筆直圓柱 體,再經放電切割成為探針之基材,其後利用再開放式槽 口將電解用陰極板置於槽内底端面之電解加工方法使其可 一次加工多數量基材前端形成一尖錐狀,故以本方法成型 . 之晶圓(晶片)探針不論製成時間及成形效率提昇加工時 效與實際使用購置成本要求。 ' 需陳明者,以上所述僅為本發明創作之具體實施例及 所運用技術原理,若依本創作之構想所作之改變,其所產Page 10 1225931 V. Description of the invention (6) The schematic diagram is shown in another embodiment of this creation: it is a prepared wire 1 is also heated and straightened and cut through the above step 2; then according to step 3 , Which is the combination of two different wire diameter wires such as wire 1 and another wire with a larger wire diameter 12, and then according to step three, most of the front ends of the cylinders with tungsten wire 1 can be used to create the above. The electrolysis procedure shown in Figures 5 to 6C is used to make a pointed cone-shaped probe, so we can get the original creation with a pointed cone-shaped structure. Therefore, according to the above-mentioned molding method, the actual shape of the arc-shaped probe can be shown in Annex I, which is enlarged by an electron microscope. Therefore, in summary, the method for forming a wafer (wafer) test probe according to the present invention is to prepare a wire (for example: tungsten, tungsten containing baht, beryllium copper, palladium), and the two sides are connected with A set of rollers are heated by electricity and made into a straight cylinder, and then cut to become the base material of the probe by electric discharge. Then, the electrolytic processing method of placing the cathode plate for electrolysis on the bottom end surface of the tank by using a re-opening slot can make it one time. The front end of a large number of substrates is processed to form a tapered cone, so the wafer (wafer) probe is formed by this method. Regardless of the production time and forming efficiency, the processing time and the actual purchase cost requirements are improved. '' For those who need to know, the above are only the specific embodiments of the invention and the technical principles used. If changes are made according to the concept of this creation,

第11頁 1225931 圖式簡單說明 第一圖 弟一圖 圖。 够 ^ S3 弟二圖 係申請人原發明第0 9 1 1 1 99 7 7申請案探針成型方 法製作流程圖。 係本創作探針成型方法另一實施例製作流程 係本創作探針成型方法步驟二矯直、切斷示音、 圖。 〜 第四〜四A圖 第五〜五B圖 ••係第0 9 1 1 1 9 9 7 7申請案探針成型方法步驟_ 線材以電解削尖成型示意圖。 第六〜六C圖 :係本創作探針成型方法步驟三,線材施以 電解方法示意圖。 赞1㈤· ·係為本創作線材電解方法另一實施例。 田·ϋ創作係第二圖另一實施例將兩不同徑體線 . •,施,雷射焊接或電阻焊接示意圖。 附件一 ·係以本創作製作完成實物放大圖。 圖號說明 > A · · · .管 體 C · ·. •惰 性 氣 1 · · · •線 材 3 · · · •放 電 切 5 ·.. •電 解 液 61 ·.. 貫 穿 槽 8 · · · •槽 口 10 · · · 尖 錐 頂 體 割線電極 2 · 4 · 6 · 孔 7 · 9 · 點 12 · ••導 輪 ••電阻加熱 •電解槽 ••電解用金屬 ••液 面 ••放電加工裝置 • 較大徑線柱體Page 11 1225931 Schematic description of the first picture brother picture. Enough ^ S3 The second picture is the flow chart of the probe forming method of the applicant's original invention No. 0 9 1 1 1 99 7 7 application. This is the manufacturing process of another embodiment of the method of forming the probe of the present invention. Step 2 of the method of forming the probe of the present invention is to straighten, cut off the sound, and figure. ~ The fourth ~ fourth A picture The fifth ~ fifth B picture •• The 0-9 1 1 1 9 9 7 7 application probe forming method steps _ Schematic diagram of electrolytic wire sharpening forming. Figures 6 ~ 6C: This is the third step of the probe forming method. The wire is applied with an electrolytic method. Zan 1㈤ ·· This is another embodiment of the wire electrolysis method. The second embodiment of Tian · Yu Creation Department is another schematic diagram of two different diameter body lines. •, Shi, laser welding or resistance welding. Attachment 1 · This is an enlarged view of the real object created with this creation. Description of drawing number> A · · ·. Tube C · · · • Inert gas 1 · · · · Wire 3 · · · · Discharge cut 5 · .. · Electrolyte 61 ··· Through groove 8 · · · • Notch 10 · · · Acuminate conical secant electrode 2 · 4 · 6 · Hole 7 · 9 · Point 12 · • • Guide wheel • Resistance heating • Electrolytic cell • • Electrolytic metal • • Liquid level • • EDM Installation • Larger diameter cylinder

1225931 圖式簡單說明 15 · 支持裝置 ϋΒ 第13頁1225931 Brief description of drawings 15 · Supporting device ϋΒ page 13

Claims (1)

I號 92109547 曰 修正 1、一種晶圓(晶片)測 形成至少包括以下步驟;先將"一探針成型方法,該探針 後進行一放電加工剪裁 :備置金屬線材經加熱矯直 -已接合基材施以—加探:基材;另將該已續直或 點為尖錐狀者;而其中,欲將丨合使該線體形成一前端頂 工成尖錐狀電解成形方法、備已矯直及切斷基材加 ⑴、備置-呈開放式d:步驟: 槽,並以相同或不同大小之 可置入電解液之電解 作為電極用陽極; 里之預備加工用之基材設 内底端面:至金:j直接設於電解槽 置二電=或備基材以平穩方式 狀,致該線材得依浸入液面不: 呈陽極溶解 以得:不同錐狀長度基材者;门木度及時間長短予以上昇 且該及加工方式形成一具尖錐形狀晶圓探針, 外並且鍊製成的金屬探針,可使該探針易於加工 11具有探針成形率者。 用探2二據申請專利範圍第1項所述之晶圓(晶片)測試 或含鍊ίΐί法,#中’由於該備置線材特殊可以設為鎢 =錁之鎢或鈹銅或鈀或其他適用金屬,將 :;於二t線材採用採一電阻加熱產生高溫,即係先將線 後,=放式空心管體内,且於該線材兩側施予張力 又以兩導輪側施以正、負電極以通電,該線材並藉 絛正 _ =線材本身電阻產生__熱能通電發熱’並藉該導輪予以 加埶、二ί ί中該管體内並施以一惰性氣體以防止該線材 並姑雷Ϊ化其後完成藉張力及導輪滾動成筆直狀後 電、水切割電極處理方法以切斷成一筆直線材狀。 用探V:::請專利範圍第1項所述之晶® (晶片)測試 係以函ϋ法,其中,依實際需要可將該探針基材金屬 雷射焊接i?:金屬作結纟’係將不同線徑或不同金屬利用 阻焊接進行前後接合,接合後再予以進行該 :針太錐π成形者’並可施以多數個一起電解加工處理 用探ν:Λ?專利範圍第1項所述之晶圓(晶片)測試 設為呈Hi,#中,該施以電解加工之多數線材係可 »又為呈不同徑或不同長度或模組化者,並可利於 以置於電解槽内予以加工成具尖錐狀頂點探針者 5、 依據申請專利範圍第丨項所述之晶 型方法,•中,該線材電解方法係上:i;解 :ί屬陰極板設以-支撐裝置接設或以-懸吊裝】固定後 下沿端適當處,並使該線材 藉此該陰極板‘置,、可3一二移::作電解處理者, 削尖成型效果者 7狀較穩定及可靠度較高線材 6、 依據申請專利範圍第丨或5 測試用探針成型方法,其中,該㈣f aaBI (晶片) 金屬陰極板上設有數個呈貫穿_ / 、、該電解 貝芽僧孔以配合該預置線材之孔I. No. 92109547: Amendment 1. A wafer (wafer) measurement and formation includes at least the following steps. First, a probe forming method is performed, and the probe is then subjected to an electrical discharge cutting. The metal wire is prepared by heating, straightening, and bonding. Substrate application—additional exploration: substrate; another one that has been straightened or pointed into a tapered shape; and among them, it is desired to combine the wire body to form a front end and taper into a tapered electrolytic forming method. Straightened and cut base material is added, prepared-open type d: step: tank, and the same or different size of electrolyte that can be placed in the electrolyte is used as the anode of the electrode; Inner bottom end face: to gold: j is directly set in the electrolytic cell and the second base = or the base material is formed in a stable manner, so that the wire must be immersed in the liquid surface without: dissolving in the anode to obtain: substrates with different tapered lengths; The degree of door wood and time are increased, and the processing method forms a wafer probe with a tapered cone shape, and the metal probe made of chain is made easy, and the probe can be easily processed. According to the test of the wafer (wafer) described in item 2 of the scope of the patent application or the chain-containing method, # 中 'can be set to tungsten = beryllium tungsten or beryllium copper or palladium or other suitable Metal, will: use a resistance heating to generate high temperature on the two t wire, that is, the wire is first put into the hollow tube body, and tension is applied to both sides of the wire and two guide wheels are used to apply positive The negative electrode is energized, and the wire is generated by the positive resistance of the wire _ = the wire itself generates __ thermal energy to generate electricity and heat, and it is added by the guide wheel to the tube and an inert gas is applied to prevent the The wire is then converted into a straight shape by cutting the wire and then cutting the electrode with water and electricity after tensioning and rolling the guide wheel into a straight shape. Probe V ::: Please refer to the Crystal® (wafer) test described in item 1 of the patent scope by the function method, where the probe base metal laser welding can be performed according to actual needs. 'It is used to weld different wire diameters or different metals back and forth by resistance welding, and then perform this after joining: needle-taper π shaper' and can apply a number of probes for electrolytic processing together. The test of the wafer (wafer) described in the item is set to Hi. In #, most of the wires subjected to electrolytic processing can be of different diameters or different lengths or modularized, and can be conveniently placed in an electrolytic cell. The inside is processed into a pointed cone-shaped vertex probe. 5. According to the crystalline method described in item 丨 of the scope of application for patent, the wire electrolysis method is based on: i; solution: the cathode plate is provided with -support. The device is connected or suspended.] After fixing, the lower edge is in proper place, and the wire is placed by this cathode plate. It can be moved one by two. High stability and reliability of the wire 6, according to the scope of patent application 丨 or 5 test probe Molding method, wherein the ㈣f aaBI (wafer) is provided with a plurality of metal on the cathode plate was through _ / ,, the electrolytic shell shoots Monk hole fitting hole of the preset wire ^ 92109547 年,月(0曰 修正_ 徑及加工數量,並設以一支撐裝置接設固定或以懸吊裝置 固定於電解槽中,並設使該線材藉伸入該陰極板所設穿貫 穿孔槽,並藉使線材呈上、下移動。可得一較佳形狀線材 削尖效果者。^ In 199209547, the month (0 said correction_ diameter and number of processing, and set up with a support device fixed or suspended device fixed in the electrolytic cell, and set the wire by extending into the cathode plate through Holes and grooves, and by moving the wire up and down, a better shape of the wire can be obtained. 第16頁Page 16
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