TWI223864B - Method for forming an underfilling material under chip from bottom surface of substrate - Google Patents
Method for forming an underfilling material under chip from bottom surface of substrate Download PDFInfo
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- TWI223864B TWI223864B TW92137200A TW92137200A TWI223864B TW I223864 B TWI223864 B TW I223864B TW 92137200 A TW92137200 A TW 92137200A TW 92137200 A TW92137200 A TW 92137200A TW I223864 B TWI223864 B TW I223864B
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- 239000000758 substrate Substances 0.000 title claims abstract description 156
- 239000000463 material Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000002347 injection Methods 0.000 claims description 100
- 239000007924 injection Substances 0.000 claims description 100
- 239000003292 glue Substances 0.000 claims description 92
- 239000013078 crystal Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 230000007306 turnover Effects 0.000 abstract 2
- 238000011109 contamination Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 54
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
1223864 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於在覆晶接人 後之底部填充材形成方二，特二^古p chlp mounting〕 矣面“'曰Η : t f 別係有關於一種由基板之下 表面形成B曰片下底部填充材之方法。 【先前技術】 目古Ϊ Ϊ半導體晶片與基板之覆晶接合技術，丨係將晶片 具有凸塊之主動面朝下加熱壓接在一基板上， ： 基板兩者之間熱膨脹係數係不相匹配 防止在晶片肖基板之間@凸塊承受熱應力，導&凸塊熱疲 勞〔thermal fatigue〕與電性連接失敗，常見地其係在 晶片與基板之間之間隙〔gap〕填充一種具有電絕緣性埶 固性之底部填充材〔underfilUng material〕，其係^ 可毛細流動之液態樹脂，用以保護晶片之線路及凸塊/並 $接晶片與基板，提供適當之機械接著強度，以防止熱應 之局邛集中，一種習知之底部填充材點注方法為沿著晶 周邊在基板上塗施「L」或「U」形塗膠圖案之底部填充 材，該底部填充材利用毛細作用流佈在晶片與基板之間， 此種方式較為費時且容易形成内包之空氣氣泡，製程效率 與產品信賴度均有待改善。 原申請人在我國專利公告編號第521411號「在晶片與 基板之間形成填充材之方法」揭示一種底部填充材之形成 方法，請參閱第1圖，一基板21 0係具有一覆晶揍合面2丨j 及一銲球接合面212，當該覆晶接合面211朝上時〔.圖未纷 出〕’ 一晶片2 2 0係覆晶結合至該基板21 0之覆晶接合面 12238641223864 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to the formation of the underfill material after the flip chip is inserted into the second square, the second square p chlp mounting] 矣 面 "'Η: tf It is related to a method of forming a B-sheet underfill material from the lower surface of the substrate. [Previous technology] Mugu ΪThe flip-chip bonding technology of semiconductor wafers and substrates, which is the active side of the wafer with bumps Heating and crimping on a substrate: The thermal expansion coefficients between the two substrates are not matched to prevent thermal stress between the bumps of the substrate and the bumps, and thermal bumps of the bumps are electrically connected. Failure, it is common to fill the gap [gap] between the wafer and the substrate with an electrically insulating and underfilling material [underfilUng material], which is a liquid resin that can capillary flow to protect the wafer Circuits and bumps / joint wafers and substrates to provide appropriate mechanical bonding strength to prevent thermal stress from concentrating. A conventional method of injecting underfill materials is to place the substrate along the periphery of the crystal. Applying an "L" or "U" shaped underfill material to the underfill material. The underfill material is spread between the wafer and the substrate by capillary action. This method is time-consuming and easy to form enclosed air bubbles. Process efficiency and product Reliability needs to be improved. The original applicant disclosed a method for forming an underfill material in China's Patent Bulletin No. 521411 "Method for Forming Filler Between Wafer and Substrate", please refer to Fig. 1. A substrate 21 0 has a flip-chip bonding. Plane 2 丨 j and a solder ball bonding surface 212, when the flip-chip bonding surface 211 is facing upwards [not shown] 'a wafer 2 2 0 series flip-chip bonding to the substrate 21 0 flip-chip bonding surface 1223864
211，以晶片220之凸塊221導接該基板210，之後，翻轉該 基板21 0使該基板2 1 0之銲球接合面2 1 2朝上並放置於—具 有容晶空間2 3 1之加熱板2 3 0，而該容晶空間2 31之底部係 形成有一抽氣孔23 2，一注膠針頭24 0係在該基板210之鲜 球接合面212上方並對準該基板2 10之注膠孔213，由上往 下提供一底部填充材250，該底部填充材250需要流過該注 膠孔213方能流佈在該晶片2 20之主動面，需要一抽氣步驟 輔助該底部填充材2 5 0通過該注膠孔2 1 3，在覆晶之底部填 充材形成製程中，需要增加一基板翻轉步驟，造成製程步 驟之增加，且不易在注膠過程中同時對該基板2丨〇加熱， 此外，因在注膠時該晶片22 0係位於該基板21〇之相對'較低 位置，該底部填充材250容易覆蓋至該晶片220之側面，造 成較咼之出膠高度〔fillet height〕，影響了產品信賴 度。 。211, the substrate 210 is guided by the bump 221 of the wafer 220, and then the substrate 21 is turned over so that the solder ball joint surface 2 1 2 of the substrate 2 1 10 faces upward and is placed in a-capacitor space 2 3 1 The heating plate 2 3 0, and the bottom of the accommodating crystal space 2 31 is formed with an exhaust hole 23 2. A glue injection needle 24 0 is above the fresh ball joint surface 212 of the substrate 210 and is aligned with the substrate 2 10. The glue hole 213 is provided with an underfill material 250 from top to bottom. The underfill material 250 needs to flow through the glue injection hole 213 to be distributed on the active surface of the wafer 2 20. A suction step is required to assist the underfill material. 2 5 0 Through the injection hole 2 1 3, in the process of forming the underfill material of the flip chip, a substrate inversion step needs to be added, resulting in an increase in the number of process steps, and it is not easy to simultaneously apply the substrate 2 to the substrate during the injection process. In addition, since the wafer 22 0 is located at a relatively low position of the substrate 21 0 during the injection, the underfill 250 easily covers the side of the wafer 220, resulting in a relatively high fillet height. ], Affecting the reliability of the product. .
美國專利第5，981，312則揭示有另一種底部填充材之 形成方法，請參閱第2圖，一基板31〇係具有一上表面 311、一下表面3 12及一注膠孔313，一具有凸塊321之晶片 320係覆晶接合在該基板31〇之上表面31][，該些凸塊321係 形成在該晶片32 0與該基板3 10之間而存在有一間隙，一注 膠針頭330係由下往上壓貼在該基板31〇之下表面312並對 應於該注膠孔313，由該注膠針頭33 〇提供之底部填充材 3 4 0須克服该注膠孔3 1 3之流動阻礙，在通過該注膠孔η 3 之後方能流佈在該基板3 1 〇與該晶片32〇之間的間隙，因為 注膠壓力係直接作用於該基板31〇之下表面312與注膠孔U.S. Patent No. 5,981,312 discloses another method for forming an underfill material. Please refer to FIG. 2. A substrate 310 has an upper surface 311, a lower surface 3 12 and a glue injection hole 313. The wafer 320 of the bump 321 is flip-chip bonded to the upper surface 31 of the substrate 31]. The bumps 321 are formed between the wafer 32 0 and the substrate 3 10 with a gap, and a glue injection needle 330 is pressed from bottom to top on the lower surface 312 of the substrate 31 and corresponds to the injection hole 313. The underfill material 3 4 0 provided by the injection needle 33 〇 must overcome the injection hole 3 1 3 The flow is hindered. After passing through the injection hole η 3, the gap between the substrate 3 10 and the wafer 32 can flow, because the injection pressure directly acts on the lower surface 312 of the substrate 31 and the injection. Plastic hole
1223864 五、發明說明（3) 313，其對應之反作用力容易使得該底部填充材340污染至 該基板310之下表面312，並且該注膠針頭330之出膠口仍 距離該晶片3 20之主動面322中央較遠，導致該底部填充材 3 4 0之流佈困難，若直接以一模具壓合該晶片3 2 0之背面 323又容易損傷該晶片32 0。 【發明内容】1223864 V. Description of the invention (3) 313, the corresponding reaction force easily causes the underfill material 340 to contaminate the lower surface 312 of the substrate 310, and the glue outlet of the injection needle 330 is still away from the active part of the wafer 3 20 The center of the surface 322 is far away, which makes it difficult to distribute the underfill material 3 40. If the back surface 323 of the wafer 3 2 0 is directly pressed by a mold, the wafer 32 0 is easily damaged. [Summary of the Invention]
本發明之主要目的在於提供一種由基板之下表面形成 晶片下底部填充材之方法，其係在覆晶接合一晶片於一基 板之後，由一注膠針頭提供一底部填充材，在填充該底部 填充材前，該注膠針頭係被移動使其出膠口經由該基板之 下表面由下往上伸入於該基板之注膠孔，該注膠針頭之出 膠口係可伸出於該基板之上表面且不抵觸該晶片主動面， 經由該出膠口提供底部填充材之均勻流動，並填充於該晶 片與該基板間的間隙，以利該底部填充材形成且不需要翻 轉基板與模具壓合，且可防止底部填充材污染該基板之下 表面。The main object of the present invention is to provide a method for forming a bottom underfill material for a wafer from a lower surface of a substrate. After a flip chip joins a wafer to a substrate, an underfill material is provided by an injection needle, and the bottom is filled. Before filling the material, the glue injection needle is moved so that its glue outlet extends into the glue injection hole of the substrate from the bottom to the top through the lower surface of the substrate, and the glue injection hole of the glue injection needle can extend out of the The upper surface of the substrate does not interfere with the active surface of the wafer, and provides a uniform flow of the underfill material through the glue outlet, and fills the gap between the wafer and the substrate to facilitate the formation of the underfill material without the need to flip the substrate and The mold is pressed, and the underfill material can be prevented from contaminating the lower surface of the substrate.
本發明之次一目的在於提供一種由基板之下表面形成 晶片下底部填充材之方法，其係在一基板形成一注膠孔， 且該注膠孔係具有一光滑孔壁，如電鍍金屬層，並且該注 膠孔之孔徑略大於一注膠針頭之外徑，以利一注膠針頭平 順伸入該基板，使該注膠針頭之出膠口伸入至在該晶片與 該基板間之間隙，以利填充底部填充材。 本發明之再一目的在於提供一種由基板之下表面形成 晶片下底部填充材之方法，其係將一注膠針頭設一擋止A secondary object of the present invention is to provide a method for forming a bottom underfill material for a wafer from a lower surface of a substrate. The method is to form an injection hole on a substrate, and the injection hole has a smooth hole wall, such as an electroplated metal layer. And the diameter of the injection hole is slightly larger than the outer diameter of a plastic injection needle, so that a plastic injection needle smoothly extends into the substrate, so that the glue outlet of the plastic injection needle extends into the space between the wafer and the substrate Gap to fill the underfill material. Another object of the present invention is to provide a method for forming a bottom underfill material for a wafer from a lower surface of a substrate.
第10頁 1223864 五、發明說明（4) 環，當移動該注膠針頭，使該注膠針頭之出膠口通過該注 膠孔而伸入至該晶片與該基板之間隙時，不會接觸損傷該 晶片。 依本發明之由基板之下表面形成晶片下底部填充材之 方法，首先提供一基板，該基板係具有一上表面、一下表 面及一注膠孔，其中該基板之上表面係形成有一覆晶接合 區，較佳地，該注膠孔係對應於該覆晶接合區之中央，在 覆晶接合'晶片於該基板之覆晶接合區之後，不需翻轉該 基板，並將該基板放置於一承載裝置，該承載裝置係具有 一通孔，該通孔係對應於該注膠孔，接著移動一注膠針 頭，使得該注膠針頭通過該承載裝置之通孔，並且使得該 注膠針頭之出膠口伸入於該基板之注膠孔，用以提供一底 部填充材填充於該晶片與該基板之間。較佳地，該基板之 注膠孔係具有光滑孔壁，如電鍍金屬層，並且該注膠孔之 孔徑略大於一注膠針頭之管外徑，以利一注膠針頭之出膠 口平順伸入至該晶片與該基板之間隙，並且該注膠針頭係 可設有一擋止環，使得該注膠針頭之出膠口通過該注膠孔 而伸入至該晶片與該基板之間隙定位時，不會接觸損傷該 晶片。 【實施方式】 請參閱所附圖式，本發明將列舉以下之實施例說明： 依本發明之一具體實施例，一種由基板之下表面形成 晶片下底部填充材之方法在各個製程步驟中之基板示意圖 係如第3至6圖所示，其詳述如后。Page 10 1223864 V. Description of the invention (4) The ring will not contact when the glue injection needle is moved so that the glue outlet of the glue injection needle passes through the glue injection hole and extends into the gap between the wafer and the substrate. Damage the wafer. According to the method for forming a bottom underfill material for a wafer from a lower surface of a substrate according to the present invention, a substrate is first provided, the substrate having an upper surface, a lower surface, and a glue injection hole, wherein a crystal is formed on the upper surface of the substrate. Bonding area, preferably, the glue injection hole corresponds to the center of the flip-chip bonding area. After flip-chip bonding the wafer to the flip-chip bonding area of the substrate, the substrate does not need to be flipped, and the substrate is placed in A bearing device having a through hole corresponding to the glue injection hole, and then moving a glue injection needle so that the glue injection needle passes through the through hole of the bearing device, and making the glue injection needle The glue outlet extends into the glue injection hole of the substrate to provide an underfill material between the wafer and the substrate. Preferably, the injection hole of the substrate has a smooth hole wall, such as an electroplated metal layer, and the hole diameter of the injection hole is slightly larger than the outer diameter of a tube of a plastic injection needle, so that the glue outlet of a plastic injection needle is smooth. It extends into the gap between the wafer and the substrate, and the glue injection needle system can be provided with a stop ring, so that the glue injection port of the glue injection needle projects into the gap between the wafer and the substrate through the glue injection hole. At this time, the wafer will not be damaged by contact. [Embodiment] Please refer to the attached drawings. The present invention will enumerate the following embodiments: According to a specific embodiment of the present invention, a method for forming a bottom underfill material for a wafer from a lower surface of a substrate in each process step The schematic diagram of the substrate is shown in Figs. 3 to 6, and details thereof are as follows.
第11頁 1223864 五、發明說明（5) 首先，請參閱第3圖，首先係提供有一具有電路結構 之基板110，該基板110具有一上表面111、一下表面112及 至少一注膠孔11 5，其中該基板1 1 〇之上表面111係呢成有 至少一覆晶接合區11 3，該覆晶接合區11 3内具有複數個凸 塊接墊11 4，以供接合晶片1 2 0，在本實施例中，該注膠孔 115係對應於該覆晶接合區113之中央並貫通該上表面hi 與該下表面1 1 2，且該注膠孔11 5之孔徑係約在〇 · 8〜2. 〇 mm 之間’以供一注勝針頭之出膠口升降活動於該注膠孔1 1 5 之中，但本發明並不局限該注膠孔丨丨5之孔徑，該注膠孔 11 5之孔徑僅須稍大於注膠針頭之出膠口管外徑即可，該 下表面112可形成有複數個外接墊〔圖未繪出〕。該基板 11 0係可為印刷電路板、陶瓷電路基.板或電路軟板，在本 實施例中’該基板1 1 〇係為具有多層線路圖案之球格陣列 封裝基板〔BGA package substrate〕，該基板11Q之該些 覆晶接合區1 1 3係為矩陣排列，以供形成複數個BGa覆晶封 裝結構’如習知地在該基板11 〇之上表面111與下表面1 1 2 分別形成有一防銲層〔圖未繪出〕，以保護内部線路。較 佳地’該基板110之注膠孔115係具有一光滑孔壁〔sm〇〇th hole pathway〕，例如一鎳/金層或銅層之電鍍金屬層116 形成在4注膠孔11 5内，以利注膠針頭平順升降活動。 之後，請參閱第4圖，將複數個晶片12〇覆晶接合於該 基板11 0之覆晶接合區11 3，每一晶片1 2 0係具有一主動面 121及一背面122，該主動面121上形成有複數個凸塊123, 如錫鉛凸塊、金凸塊或高分子導電凸塊等等，在覆晶接合Page 1223864 V. Description of the invention (5) First, please refer to FIG. 3, firstly, a substrate 110 having a circuit structure is provided. The substrate 110 has an upper surface 111, a lower surface 112 and at least one injection hole 11 5 Wherein, the upper surface 111 of the substrate 1 10 is formed with at least one flip-chip bonding region 11 3, and the flip-chip bonding region 11 3 has a plurality of bump pads 11 4 for bonding the wafer 1 2 0, In this embodiment, the glue injection hole 115 corresponds to the center of the flip-chip bonding region 113 and penetrates the upper surface hi and the lower surface 1 1 2, and the hole diameter of the glue injection hole 115 is about 0 · 8 ~ 2. 0mm 'for the glue opening of an injection pin to move up and down in the injection hole 1 1 5, but the present invention is not limited to the diameter of the injection hole 丨 5 The diameter of the glue hole 115 needs only to be slightly larger than the outer diameter of the glue outlet tube of the injection needle. The lower surface 112 may be formed with a plurality of external pads (not shown in the figure). The substrate 110 may be a printed circuit board, a ceramic circuit substrate, or a flexible circuit board. In this embodiment, the substrate 110 is a ball grid array package substrate [BGA package substrate] having a multilayer circuit pattern. The flip-chip bonding regions 1 1 3 of the substrate 11Q are arranged in a matrix for forming a plurality of BGa flip-chip packaging structures' as is conventionally formed on the upper surface 111 and the lower surface 1 1 2 of the substrate 11 There is a solder mask (not shown) to protect the internal circuit. Preferably, the glue injection hole 115 of the substrate 110 has a smooth hole wall [sm00th hole pathway], for example, a nickel / gold layer or a copper plated metal layer 116 is formed in the 4 glue injection holes 115 To facilitate the smooth movement of the injection needle. Then, referring to FIG. 4, a plurality of wafers 120 are flip-chip bonded to the flip-chip bonding area 11 3 of the substrate 110, and each wafer 120 has an active surface 121 and a back surface 122. The active surface A plurality of bumps 123 are formed on 121, such as tin-lead bumps, gold bumps, or polymer conductive bumps, etc.
1223864 五、發明說明（6) 後’由於該些晶片1 2 〇之該些凸塊1 2 3係接合在該基板1 1 〇 之凸塊接墊1 1 4，使得在該些晶片1 2 0與該基板丨丨0之間形 成有一"間隙。1223864 V. Description of the invention (6) After the bumps 1 2 3 of the wafers 1 2 0 are bonded to the bump pads 1 1 4 of the substrate 1 1 0, so that the wafers 1 2 0 A "gap" is formed between the substrate and the substrate.
接著’請參閱第5圖，在不需要翻轉基板11Q與模具壓 合之狀態下，將該已接合有晶片120之基板110放置於一承 載裝置130上，該承載裝置i 3〇係具有一通孔丨31，該通孔 1 31係對應該基板丨丨〇之注膠孔丨丨5，且該通孔丨3 }之孔徑以 稱大於該基板110之注膠孔115孔徑為較佳，在本實施例中 該承載裝置130之通孔131處設有一注膠針頭丨40，該注膠 針頭140係具有一出膠口 141，較佳地，該承載裝置13〇係 設有吸盤結構〔圖未繪出〕，如靜電吸盤或抽氣吸盤，以 使該基板110之下表面112平貼該承載裝置13〇。Next, please refer to FIG. 5. In a state where the substrate 11Q and the mold do not need to be flipped, the substrate 110 to which the wafer 120 has been bonded is placed on a carrier device 130. The carrier device i30 has a through hole.丨 31, the through hole 1 31 is a glue injection hole corresponding to the substrate 丨 丨 〇 丨 5, and the diameter of the through hole 丨 3} is preferably larger than the diameter of the glue injection hole 115 of the substrate 110. In the embodiment, a through-hole 131 is provided at the through hole 131 of the carrying device 130, and the through-hole 140 is provided with a glue outlet 141. Preferably, the carrying device 13 is provided with a suction cup structure [not shown in the figure] Draw], such as an electrostatic chuck or a suction chuck, so that the lower surface 112 of the substrate 110 is flat against the carrier device 130.
在放置該基板110之步驟之後，請參閱第6圖，移動該 ✓主膠針頭1 4 〇或该承載裝置1 3 〇，例如垂直上升該注膠針頭 140或者是垂直下降該承載裝置丨3〇，使得該注膠針頭14〇 之出膠口 1 41係由下往上伸入該基板丨丨〇之注膠孔丨丨5，以 提供一底部填充材1 5〇流佈至在該些晶片丨2〇與該基板丨J 〇 之間的間隙，較佳地，該注膠針頭丨4〇設有一擋止環142， 當該注膠針頭140之出膠口141穿過該基板11〇之注膠孔115 時’使得該注膠針頭140不會接觸該晶片120之主動面 121。請參閱第6及8圖，在注膠步驟中，利用該注膠針頭 140之出膠口 141係伸入該基板i〇之注膠孔115，且以該出 膠口 141係高出於該基板110之上表面m到達在該基板n〇 與忒晶片1 2 〇之間隙為較佳，以提供該底部填充材丨5 〇之流After the step of placing the substrate 110, please refer to FIG. 6 to move the ✓ main glue needle 1 4 0 or the supporting device 1 3 0, such as vertically rising the glue injection needle 140 or vertically lowering the bearing device 3 So that the glue injection port 1 41 of the glue injection needle 14 extends from the bottom into the glue injection hole 丨 5 of the substrate 丨 丨 5 to provide an underfill material 150 to the wafers 丨The gap between 20 and the substrate 丨 J 〇, preferably, the glue injection needle 丨 40 is provided with a stop ring 142, when the glue outlet 141 of the glue injection needle 140 passes through the substrate 11 At the time of the glue hole 115, the glue injection needle 140 does not contact the active surface 121 of the wafer 120. Please refer to FIGS. 6 and 8. In the glue injection step, the glue outlet 141 of the glue injection needle 140 is extended into the glue injection hole 115 of the substrate i0, and the glue outlet 141 is higher than that. It is preferable that the upper surface m of the substrate 110 reaches the gap between the substrate no and the wafer 1 2 0 to provide the flow of the underfill material 5
_ 第13頁 1223864 五、發明說明（7) 動最短路徑，當經由該注膠針頭丨4〇之出膠口丨4 i填充該底 部填充材150時’該底部填充材丨50係在該基板11〇之覆/ 接合區113形成以該注膠孔115為中心之均勻流動放射狀波 前151往外放射前進，以快速且密實填充於該晶片12〇與該 基板110間之間隙，以避免將空氣包覆於在該基板11〇與該 晶片1 2 0之間，即避免該基板11 〇與該晶片i 2 〇之間產·生氣 泡，或是避免該該底部填充材15〇回流至該基板11〇之下表 面112。較佳地，該承載裝置13〇係連接至一加熱器〔圖未 繪出〕，在注膠步驟之同時，加熱之該承載裝置1 3 〇使得 該基板11 0維持在一加熱溫度，以利該底部填充材丨5〇在該 基板11 0上之流動。 最後請參閱第7圖，將該底部填充材1 5 0固化成型，以 保護該些凸塊123與防止該晶片12〇與該基板11〇間之局部 應力/集中，此外，依本發明之方法，由於該底部填充材 150係經由伸入該基板注膠孔115之注膠針頭140提供，在 注膠步驟中，該注膠針頭14〇之出膠口1ζΠ係開口往上且對 準该晶片1 2 0主動面1 21〔如第6圖所示〕，使得該底部填 充材150形成有一較低之出膠高度h〔 nilet height〕， 依據本發明’該底部填充材150比較不會完全覆蓋至該晶 片120在該主動面ι21與該背面122之間的側面，當該底部 填充材1 5 0之出膠高度h能有效降低，則該覆晶結構具有較 佳之產品信賴度。 本發明之保護範圍當視後附之申請專利範圍所界定者 為準’任何熟知此項技藝者，在不脫離本發明之精神和範_ Page 13 1223864 V. Description of the invention (7) The shortest moving path, when filling the underfill material 150 through the glue injection port of the injection needle, 4i, 'the underfill material, 50 is on the substrate The 110 / covering / joining area 113 forms a uniformly flowing radial wavefront 151 centered on the glue injection hole 115 and radiates outward to quickly and densely fill the gap between the wafer 12 and the substrate 110 to avoid Air is encapsulated between the substrate 11 and the wafer 120, that is, to prevent air bubbles from being generated between the substrate 11 and the wafer i20, or to prevent the underfill material 15 from flowing back to the substrate. Lower surface 112 of the substrate 11〇. Preferably, the supporting device 13 is connected to a heater (not shown in the figure), and at the same time as the glue injection step, the supporting device 13 is heated so that the substrate 110 is maintained at a heating temperature so as to facilitate The underfill material 50 flows on the substrate 110. Finally, referring to FIG. 7, the underfill material 150 is cured and formed to protect the bumps 123 and prevent local stress / concentration between the wafer 120 and the substrate 110. In addition, the method according to the present invention Since the underfill material 150 is provided through the glue injection needle 140 protruding into the glue injection hole 115 of the substrate, in the glue injection step, the glue outlet 1ζΠ of the glue injection needle 14 is upward and aligned with the wafer. 1 2 0 active surface 1 21 (as shown in FIG. 6), so that the underfill material 150 has a lower nih height h [nilet height], according to the present invention, the underfill material 150 is less likely to completely cover To the side of the wafer 120 between the active surface 21 and the back surface 122, when the adhesive height h of the underfill 150 can be effectively reduced, the flip-chip structure has better product reliability. The scope of protection of the present invention shall be determined by the scope of the appended patent application ’whichever is familiar to the person skilled in the art without departing from the spirit and scope of the present invention
第14頁 1223864 五、發明說明（8) 圍内所作之任何變化與修改，均屬於本發明之保護範圍。 1223864 圖式簡單說明 【圖式簡單說 第1圖：一種 第2圖 第3圖 第4圖 第5圖 第6圖 第7圖 第8圖 往下 :另一 板後 圖； :依本 材之 :依本 材之 圃， :依本 材之 ISI · 圃， :依本 材之 往上 :依本 材之 意圖 :依本 材之 之基 明】 習知底 點注底 種習知 由下往 發明之 方法， 發明之 方法， 發明之 方法， 發明之 方法， 點 >主底 發明之 方法， •，及 發明之 方法， 板上表 部填充材之方法，在翻轉基板後由上 部填充材之基板截面示意圖； 底部填充材之方法，塗膠裝置貼壓基 上點注底部填充材之基板截面示意 面形成晶片下底部填充 截面示意圖； 面形成晶片下底部填充 晶片之基板截面示意 面形成晶片下底部填充 裝置之基板截面示意 由基板之下表面形成晶片下4部填充 以一注膠針頭伸入基板之通孔後由下 部填充材之基板截面示意圖； 由基板之下表面形成晶片下底部填充 在固化4底部填充材後之基板截面示 由基板之下表面形成晶片下底部填充 5玄底部填充材在基板上形成波前移動 面示意圖。 由基板 所提供 由基板之下表 覆晶接合有一 之下表 之基板 由基板之下表 放置於一承載Page 14 1223864 V. Any changes and modifications made within the description of the invention (8) belong to the protection scope of the present invention. 1223864 Brief description of the drawings [Schematic description of the first figure: a kind of 2nd figure 3rd figure 4th figure 5th figure 6th figure 7th figure 8th figure down: another figure behind the board; : The garden according to this material,: The ISI according to this material · The garden,: From the top of this material: According to the intention of this material: According to the basis of this material The method of invention, the method of invention, the method of invention, the method of invention, the point > the method of the invention of the main bottom, and the method of invention, the method of filling material on the surface of the board, after the substrate is turned over, the Schematic diagram of the substrate cross-section; Underfill material method, the substrate cross-section schematic diagram of the underfill material on the base of the gluing device forming a schematic diagram of the bottom underfill section of the wafer; The cross section of the substrate of the underfill device is formed from the lower surface of the substrate. The lower part of the wafer is filled with a glue injection needle and penetrates into the through hole of the substrate. The schematic diagram of the cross section of the substrate from the lower filler material. Under-Chip Underfill After curing the 4 underfill material, the cross-section of the substrate is shown. The lower surface of the substrate is used to form the wafer underfill. 5 The underfill material forms a wavefront movement on the substrate. Provided by the substrate The substrate under the substrate is bonded to the substrate under the substrate The substrate under the substrate is placed on a carrier
第16頁 1223864 圖式簡單說明 元件符號簡單說明： 110 基 板 111 上 表 面 112 下 表 面 113 覆 晶 接 合區 114 凸 塊 接 墊 115 注 膠 孔 116 金 屬 層 120 晶 片 121 主 動 面 122 背 面 123 凸 塊 130 承 載 裝 置 131 通 孔 140 注 膠 針 頭 141 出 膠 π 142 擋 止 環 150 底 部 填 充材 151 移 動 波 前 210 基 板 211 覆 晶 接 合 面 212 輝球 接合面 213 注 膠 孔 220 晶 片 221 凸 塊 230 承 載 裝 置 231 容 晶 空 間 232 吸 氣 孔 240 注 膠 針 頭 250 底 部 填 充 材 310 基板 311 上 表 面 312 下 表 面 313 注 膠 孔 320 晶 片 321 凸 塊 322 主 動 面 323 背 面 330 注 膠 針 頭 340 底 部 填 充 材 h 出 膠 高 度Page 16 1223864 Simple illustration of the component symbols Simple explanation: 110 substrate 111 upper surface 112 lower surface 113 flip-chip bonding area 114 bump pad 115 glue hole 116 metal layer 120 chip 121 active surface 122 back 123 bump 130 bearing Device 131 through hole 140 glue injection needle 141 glue π 142 stop ring 150 underfill material 151 moving wavefront 210 substrate 211 flip chip joint surface 212 glow ball joint surface 213 glue hole 220 wafer 221 bump 230 bearing device 231 capacity Crystal Space 232 Suction hole 240 Glue injection needle 250 Underfill material 310 Substrate 311 Upper surface 312 Lower surface 313 Glue injection hole 320 Wafer 321 Bump 322 Active surface 323 Backside 330 Glue injection needle 340 Underfill material h Glue height
第17頁Page 17
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| TW92137200A TWI223864B (en) | 2003-12-26 | 2003-12-26 | Method for forming an underfilling material under chip from bottom surface of substrate |
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