TWI221191B - Method of making the resilient probe needles - Google Patents
Method of making the resilient probe needles Download PDFInfo
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- TWI221191B TWI221191B TW90109838A TW90109838A TWI221191B TW I221191 B TWI221191 B TW I221191B TW 90109838 A TW90109838 A TW 90109838A TW 90109838 A TW90109838 A TW 90109838A TW I221191 B TWI221191 B TW I221191B
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1221191 五、發明說明(1) 【發明領域】 本發明係有關於一種彈性探針之製造方法,特別係有 關於一種細針狀彈性探針之製造方法。 【先前技術】 在習知用以測試半導體裝置之測試設備中,特別是晶 圓之測試設備,在測試設備之測試頭〔test head〕裝設 一探針卡〔probe card〕,探針卡上形成有複數個探針 〔probe needle〕,用以接觸半導體裝置之輸入/輪出端 點,形成電性導通,以供測試該半導體裝置之功能。 在美國專利第6,144,212號中揭示一種垂直針狀探針 卡之製造方法〔method of manufacturing a vertical needle type probe card〕,如第7圖所示,探針卡上之 探針5 0係包含有一上部位5 1、一中間部位5 2及一下部)立 5 3 ’其中在中間部位5 2之内徑係小於上部位5丨及下部位5 3 之内徑,使在結構上較弱於上部位51及下部位53,而能产 熱膨脹差異彎曲變化,使探針5〇之下部位53不易彎曲^二 或折斷,並且探針50之上部位51係彎折成[形,以供固定’ 於上導板,其著重於探針卡之組合式製造過程,對該探 5二〇之製造方'法未多加揭示,通常習知之探針製造方=係為 鑄模法〔molding〕、抽拉或滾壓成形法,若是法則’、 需要訂製模具,成本較高,若是抽拉或滾壓方式則探針 =將受1限’此外,㈣目前半導體裝置之端點分佈高 在度化,端點之間距漸趨縮小,依據上述之習知 製得之探針無法適用於測試高密度端點分佈之半導體裝/1221191 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a method for manufacturing an elastic probe, and particularly to a method for manufacturing a fine needle-shaped elastic probe. [Previous technology] In the conventional test equipment used to test semiconductor devices, especially wafer test equipment, a probe card is installed on the test head of the test equipment, and the probe card is mounted on the probe card. A plurality of probe needles are formed to contact the input / round-out terminals of the semiconductor device to form electrical continuity for testing the function of the semiconductor device. A method of manufacturing a vertical needle type probe card is disclosed in U.S. Patent No. 6,144,212. As shown in FIG. 7, the probe 50 on the probe card 50 The system includes an upper part 51, an intermediate part 5 2 and a lower part.) 5 3 ', wherein the inner diameter of the middle part 5 2 is smaller than the inner diameter of the upper part 5 and the lower part 5 3, so that the structure is relatively small. Weaker than the upper part 51 and lower part 53, and can produce differential expansion due to thermal expansion, making the lower part 53 of the probe 50 difficult to bend or break, and the upper part 51 of the probe 50 is bent into a [shape, with For fixing 'to the upper guide plate, it focuses on the combined manufacturing process of the probe card. The method of manufacturing the probe 520 has not been disclosed. Generally, the conventional probe manufacturing method = the molding method [molding] , Drawing or rolling forming method, if it is a rule ', need to customize the mold, the cost is higher, if drawing or rolling method, the probe = will be limited by 1' In addition, the current endpoint distribution of semiconductor devices is high Degree, the distance between the endpoints is gradually narrowing. Pins are not suitable for testing semiconductor devices with high density end points /
第5頁 1221191 五、發明說明(2) 置。 【發明目的及概要】 ”主要目的在於提供一種彈性探針方 f ’用以解決上述之問題,利用照相顯影及電鍍此 在一基板上製備複數個具密集間距及具彈性之^法,= 針能適用於測試設備之探針卡,α測試 ::丄:: 具凸塊之半導體裝置。 又糕點匀佈或 本發明之次一目的在於提供一種 法,利用照相顯影及電鍍方法,能在之製造方 複數個具密集間距及具彈性之探針, 卡上直接形成 效率且容易失誤之缺點,*你π 進U在人工擺針低 使用。肖u之缺點,亚使純針耗損之探針卡能重覆 本發明之再一目的在於提供一 f板上並具有第-金屬&、第二c針,形成於-考折部之厚度小於第一金屬柱盥 ^^一·幫折部,利用 :材質,以提供-測試半導體裝置内徑及不同 性。 丁次收壓力之緩衝彈 依本發明之彈性探針之製造方法, 在一基板上形成第一光阻層;/ ,/、步驟為: >同 m阻層上形成複數個衝 對第一光阻層曝光顯影而至少 ^成—貫通至基板之孔 電鍍第一金屬柱至上述孔洞並邀 形成第二光阻層至第一光阻層^ f應之銜接條連接; 1221191Page 5 1221191 V. Description of the Invention (2). [Objective and Summary of the Invention] "The main purpose is to provide an elastic probe square f 'to solve the above-mentioned problems, using photographic development and electroplating to prepare a plurality of densely spaced and flexible ^ methods on a substrate, = needle Can be applied to probe cards of test equipment, alpha test :: 丄 :: semiconductor devices with bumps. Evenly distributed cakes or cakes, or a second object of the present invention is to provide a method that can be used in photographic development and electroplating methods. Manufacture a plurality of probes with dense pitch and elasticity. The shortcomings of efficiency and easy error are directly formed on the card. * You π enter U is used in artificial pendulum needles. The shortcomings of Xiao u are the probes that consume pure needles. The card can repeat the present invention. Another object is to provide a f-plate with a -metal & and a second c-pin, which is formed in the -knock-folding portion with a thickness smaller than that of the first metal pillar. Use: Material to provide-test the inner diameter and differentness of the semiconductor device. The buffering bomb of the Ding Shun pressure according to the manufacturing method of the elastic probe of the present invention, a first photoresist layer is formed on a substrate; /, /, The steps are: > A plurality of photoresist layers are formed on the m resist layer to expose and develop the first photoresist layer to form at least-a hole penetrating to the substrate is plated with the first metal pillar to the above hole and invited to form a second photoresist layer to the first photoresist layer ^ f Should be connected by connecting bars; 1221191
五、發明說明(3) 孔洞 對第二光阻層曝光顯影而至少形成一接觸至銜接條之 電鍍第二金屬柱至第二光阻層之孔洞;及 移除第光阻層及第二光阻層,由對應之第一金屬 柱、銜接條及第二金屬柱形成至少一彈性探針。 【發明詳細說明】 分士:參閱所附圖<,本發明將列舉以下之實施例說明: 依本發明之彈性探斜 _造方夫 去其依序步驟之截面示意 圖係如第1至7圖所示,其詳述如后。 ,本發明之彈性探針之製造方法,首先提供一基板, :基板10係為適合電鍍之適當材質,如金屬板、陶瓷電路 基板、印刷電路板,甚至是一探針卡〔pr〇be card〕,如 第1^圖所示,在本實施例中,該基板10係為一具有複數個 導電,點11〔conductive pad〕之探針卡,並在基板1〇上 形成第一光阻層20〔first dielectric iayer〕,如以旋 塗〔spin coating〕或貼附方式形成第一光阻層2〇 〔Photoresist layer〕,該光阻層20係可產生光化學反 應而變化結構者,其材質可為酚醛〔novolak〕、聚甲基 丙烯酸甲酯〔Polymethyl methacrylate〕等正光阻或如 一氮聯苯甲醯類〔diazide〕之負光阻,或可為一種感光 乾膜〔dry f i im〕。 之後’如第2圖所示,在第一光阻層2 0上形成複數個 L 銜接條32,該銜接條32係呈長條板狀,其材質可選自如 鋼、恒範鋼〔Invar、kovar〕、合金42或含銅合金等材V. Description of the invention (3) The hole exposes and develops the second photoresist layer to form at least one hole that contacts the plating second metal pillar to the second photoresist layer; and removes the first photoresist layer and the second light The resistance layer forms at least one elastic probe from the corresponding first metal pillar, the connecting bar and the second metal pillar. [Detailed description of the invention] Division: Refer to the attached drawings < The present invention will enumerate the following examples: The cross-sectional schematic diagrams of the sequential steps according to the elastic tilt detection of the present invention are shown in steps 1 to 7 As shown in the figure, the details are as follows. The manufacturing method of the elastic probe of the present invention first provides a substrate: The substrate 10 is a suitable material suitable for electroplating, such as a metal plate, a ceramic circuit substrate, a printed circuit board, or even a probe card ], As shown in FIG. 1 ^, in this embodiment, the substrate 10 is a probe card having a plurality of conductive, dot 11 [conductive pad], and a first photoresist layer is formed on the substrate 10. 20 [first dielectric iayer], such as spin coating or attaching the first photoresist layer 20 [Photoresist layer], the photoresist layer 20 can produce a photochemical reaction to change the structure, its material It can be a positive photoresist such as novolak, polymethyl methacrylate, or a negative photoresist such as diazide, or it can be a photosensitive dry film [dry fi im]. Afterwards, as shown in FIG. 2, a plurality of L link bars 32 are formed on the first photoresist layer 20, and the link bars 32 are in the shape of a long plate, and the material can be selected from, for example, steel, Hengfan Steel [Invar, kovar], alloy 42 or copper-containing alloys
第7頁 Ϊ221191 五、發明說明(4) 一 ' --- 料,如第2a圖所示,銜接條32之一端具有對應於導電接點 U之開孔321,而另一端較佳地形成一粗糙面322,關於銜 接,32在第一光阻層2〇之形成方法有兩種,可在曝光顯$ =前或在曝光顯影之後··第一、先在第一光阻層2〇〔較= 為^曝光之第一光阻層20〕貼附一金屬板,利用照相顯影 〔Photolithography〕技術,係在該金屬板上形成一光 i接ίί對保護區進行選擇性姓刻,以構成複數個 .° 疋,第―、直接將一具有複數個銜接條32 之導線架貼附於第一光阻層2 〇上。 八 一 ΪΓ其圖Λ示,對第一光阻層20曝光顯影而至少形成 貝k至基板1〇之孔洞21,包含曝光〔exp〇s虹e〕、顯影 eVe 〇pmen1:〕、清洗及硬烤〔hard bake〕等牛驟,,里 當之顯影劑,如適用於正光阻之鹼金屬或有:鹼二f 或疋負光阻之二甲婪 A有機驗/谷液 孔321並裸露對應之本導電接中^孔洞21係透過銜接條32之開 基板二著而:第第4_圓先所二將基板10浸入電錢槽室並電錢 第-金屬柱ί:材之孔洞21形成第-金屬柱, 如銅、恒範鋼〔invar、kova"、合金42::相同,選自 料’較佳為選用比銜接條32鋼性之金屬材:3:合金等材 條32之厚度係小於第一肉 ’其中該銜接 與第-金眉柱31相1结^屬柱31之内控,此時,銜接條32 之後,如第5圖所示,在第一 附方式形成第二光阻層4。,再利二目層顯旋塗或貼 第8頁 1221191 五、發明說明(5) 〔photolithography〕技術 光顯影而 上述銜接 之後 之貫通孔 屬柱3 3係 3 1相互平 電性,當 會比濺鍍 21 、 41 , 面 ° 層4 0進行曝 係裸露並接觸 客二光阻層4 0 例中,第二金 與第一金屬柱 層40具有不導 金屬柱31、33 沉積於孔洞 光阻層4 0之表 至少形成一孔洞4 1 條32之一端〔具粗 ,如第6圖所示,i 洞41填充第二金屬 與第一金屬柱31具 行,由於第一光阻 基板10連接上陰極 〔sputtering 〕快 而不會沉積在第一 ’係對該第二光 ’其中該孔洞4 1 糙面32 2〕。 又電鍍方式在該角 柱3 3 ’在本實施 有近似之内徑並 層2 0與第二光阻 以進行電鍍時, 得多的速度電鍍 光阻層20與第二 ίϋπPage 7 Ϊ221191 V. Description of the invention (4) A '--- As shown in Figure 2a, one end of the connecting bar 32 has an opening 321 corresponding to the conductive contact U, and the other end preferably forms an As for the rough surface 322, there are two methods for forming the 32 on the first photoresist layer 20, which can be before the exposure is shown or after the exposure development .. First, first on the first photoresist layer 2 [ The first photoresist layer 20 for exposure is attached to a metal plate, and a photolithography technique is used to form a photoperiod on the metal plate to selectively engrav the protected area to constitute A plurality of. ° 疋, first, directly attach a lead frame having a plurality of connecting bars 32 to the first photoresist layer 20. As shown in the figure Λ, the first photoresist layer 20 is exposed and developed to form at least holes 21 to substrate 10, including exposure [expos rainbow e], development eVe opmen1:], cleaning and hardening. Bake [hard bake] and other cattle, such as the developer, such as alkali metals suitable for positive photoresistance or: alkali two f or 阻 negative photoresistance dimethyl A organic test / valley hole 321 and exposed corresponding The original conductive connection ^ The hole 21 is formed through the open substrate of the connection bar 32. The fourth_circle first place immerses the substrate 10 in the electric money slot chamber and the electric money is formed. The metal column is formed by the hole 21 of the material. The first-metal pillar, such as copper, Hengfan steel [invar, kova ", alloy 42 :: the same, selected from the material 'preferably select a metal material that is more rigid than the joint bar 32: 3: the thickness of the alloy bar 32 It is smaller than the first flesh 'wherein the connection is in phase with the first-golden eyebrow pillar 31, which is an internal control of the pillar 31. At this time, after the connecting strip 32, as shown in Fig. 5, a second photoresist layer is formed in the first attachment mode. 4. Secondly, spin-coating or pasting of the binocular layer is shown on page 81221191 5. Description of the invention (5) [photolithography] technology and the through holes after the above connection belong to the column 3 3 series 3 1 mutual electrical properties, when compared with Sputtering 21, 41, surface ° layer 40 is exposed and exposed to the second photoresist layer 40. In the example, the second gold and the first metal pillar layer 40 have non-conductive metal pillars 31 and 33 deposited in the hole photoresist The surface of layer 40 has at least one hole 4 1 and one end of 32 [with a thick, as shown in FIG. 6, i hole 41 is filled with the second metal and the first metal pillar 31, because the first photoresistive substrate 10 is connected The upper cathode (sputtering) is fast and will not be deposited on the first 'system to the second light' (where the hole 4 1 is a rough surface 32 2). In the plating method, the corner post 3 3 ′ has an approximate inner diameter and is layered with 20 and a second photoresist for electroplating. The photoresist layer 20 and the second photoresist are plated at a much higher speed.
最後,以溼式清洗方式一次移除第一光 光阻層4G,選用適當之清洗劑,如過氧層第一Finally, the first photoresist layer 4G is removed by wet cleaning at a time, and a suitable cleaning agent is used, such as the first peroxy layer.
〔H2S05〕、丁酮〔butanone〕或羥胺〔NH2〇H〕等溶劑, 如第7圖所示’以移除光阻層20、4〇,而能在一基板1〇上 形成複數個由上述第一金屬柱31、銜接條32及第二金屬柱 33構成之彈性探針30,因為銜接條32係為該彈性探針之 彎折部、,以提供一壓力吸收之緩衝彈性,並能在一基板1 〇 上形成複數個具適當尺寸及細微間距之彈性探針3〇,並且 利用本發明之彈性探針之製造方法,每一探針3〇之銜接條 32可與第一金屬柱31及第二金屬柱33為不同以 材料選用之多樣化。、 甚至,本發明之彈性探針之製造方法係能在探針卡 〔probe card〕上直接長針,解決以往人工擺針之低效率[H2S05], butanone, or hydroxylamine [NH2〇H] and other solvents, as shown in Figure 7 'to remove the photoresist layer 20, 40, and can form a plurality of The elastic probe 30 composed of the first metal post 31, the connecting bar 32 and the second metal post 33, because the connecting bar 32 is a bent portion of the elastic probe, so as to provide a cushioning elasticity for pressure absorption, and can A plurality of elastic probes 30 having a suitable size and a fine pitch are formed on a substrate 10, and using the elastic probe manufacturing method of the present invention, the connecting strip 32 of each probe 30 can be connected to the first metal pillar 31 And the second metal pillar 33 is different in material selection. And, even, the method for manufacturing the elastic probe of the present invention can directly prolong the needle on the probe card, which solves the low efficiency of manual pendulum in the past.
1221191 五 '發明說明(6) =::::;:其:探針:作為上述處理時之基板1〇, 故本發明:::2:,不需抛棄探針卡。 5為準,任何熟知此ί:::诶附之申請專利範圍所界定 乾圍内所作之任何變化,在不脫離本發明之精神和 圍。 ^ ,均屬於本發明之保護範 1221191 圖式簡單說明 【圖式說明】 第1圖:依本發明之彈性探針之製造方法,在一基板上形 成第一光阻層及一金屬板之截面示意圖; 第2 圖:依本發明之彈性探針之製造方法,蝕刻該金屬板 而形成銜接條之截面示意圖; 第2a 圖:依本發明之彈性探針之製造方法,銜接條之上 視不意圖, 第3圖:依本發明之彈性探針之製造方法,曝光顯影第一 光阻層而形成孔洞之截面示意圖; 第4圖:依本發明之彈性探針之製造方法,電鍍形成第一 金屬柱之截面示意圖; 第5圖:依本發明之彈性探針之製造方法,形成第二光阻 層並曝光顯影至少一接觸銜接條之孔洞之截面示 意圖; 第6圖:依本發明之彈性探針之製造方法,形成第二金屬 柱之截面不意圖, 第7圖:依本發明之彈性探針之製造方法,移除第一光阻 層與第二光阻層而形成彈性探針之截面示意圖; 及 第8圖:美國專利第6, 144, 212號垂直針狀探針卡之製造 方法中,其探針形狀示意圖。 【圖號說明】 10 基板 11 導電接點 20 第——光阻層 21 孔洞1221191 Five 'Invention description (6) = ::::; :: Probe: as the substrate 10 during the above processing, so the present invention :: 2: does not need to discard the probe card. 5 shall prevail, and any changes made within the scope defined by the scope of the patent application for which ί ::: is attached will not depart from the spirit and scope of the present invention. ^ All belong to the protection scope of the present invention 1221191 Brief description of the drawings [Illustration of the drawings] Figure 1: According to the method of manufacturing the elastic probe of the present invention, a first photoresist layer and a cross section of a metal plate are formed on a substrate Schematic diagram; Figure 2: Schematic cross-sectional view of an engagement bar formed by etching the metal plate according to the method of manufacturing an elastic probe of the present invention; Figure 2a: Manufacture method of an elastic probe according to the present invention, without the connection bar viewed from above Intent, FIG. 3 is a schematic cross-sectional view of a hole formed by exposing and developing a first photoresist layer according to the method for manufacturing a flexible probe of the present invention; FIG. 4 is a method for manufacturing a flexible probe according to the present invention by electroplating to form a first Sectional schematic diagram of a metal pillar; Figure 5: Sectional schematic diagram of forming a second photoresist layer and exposing and developing at least one hole of a contact bar according to the method of manufacturing an elastic probe of the present invention; Figure 6: Elasticity according to the present invention The manufacturing method of the probe is not intended to form the cross section of the second metal pillar. Figure 7: According to the manufacturing method of the elastic probe of the present invention, the first photoresist layer and the second photoresist layer are removed to form an elastic probe. Fig. 8 is a schematic cross-sectional view of a needle; and Fig. 8 is a schematic diagram of a probe shape in a method for manufacturing a vertical needle probe card of U.S. Patent No. 6,144,212. [Illustration of drawing number] 10 substrate 11 conductive contact 20 first-photoresist layer 21 hole
12211911221191
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TW90109838A TWI221191B (en) | 2001-04-23 | 2001-04-23 | Method of making the resilient probe needles |
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TW90109838A TWI221191B (en) | 2001-04-23 | 2001-04-23 | Method of making the resilient probe needles |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI564565B (en) * | 2011-01-13 | 2017-01-01 | Sankei Engineering Co Ltd | Inspection method for manufacturing the probe |
TWI814256B (en) * | 2021-02-22 | 2023-09-01 | 南韓商普因特工程有限公司 | The electro-conductive contact pin, manufacturing method thereof |
WO2024021198A1 (en) * | 2022-07-26 | 2024-02-01 | 上海泽丰半导体科技有限公司 | Probe treatment method and probe |
-
2001
- 2001-04-23 TW TW90109838A patent/TWI221191B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI564565B (en) * | 2011-01-13 | 2017-01-01 | Sankei Engineering Co Ltd | Inspection method for manufacturing the probe |
TWI814256B (en) * | 2021-02-22 | 2023-09-01 | 南韓商普因特工程有限公司 | The electro-conductive contact pin, manufacturing method thereof |
WO2024021198A1 (en) * | 2022-07-26 | 2024-02-01 | 上海泽丰半导体科技有限公司 | Probe treatment method and probe |
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