TW577989B - Probe head and method for forming probe needles on the probe head - Google Patents
Probe head and method for forming probe needles on the probe head Download PDFInfo
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Description
577989 五、發明說明(l) 【發明領域】 本發明係有關於一種用以探測半導體晶圓之探測頭, 特別係有關於一種具有彈性探針之探測頭及該些彈性探針 之形成方法。 【先前技術】 當半導體晶圓製造完成後,係需加以測試其電性性 能’通常測試半導體晶圓之測試設備(tester )包含有一 才木測卡(probe card),其係結合有一探測頭(pr〇be h e a d ) ’ $楝測頭上形成有複數個探針(p『〇 b e n e e d 1 e577989 V. Description of the Invention (l) [Field of the Invention] The present invention relates to a detection head for detecting semiconductor wafers, and particularly to a detection head with elastic probes and a method for forming the elastic probes. [Previous technology] After the semiconductor wafer manufacturing is completed, it is necessary to test its electrical properties. The tester for testing semiconductor wafers usually includes a probe card, which is combined with a probe head ( pr〇be head) '$ 楝 Probe head is formed with a plurality of probes (p 『〇beneed 1 e
)’以電性接觸晶圓上積體電路之焊墊(pad ),習知焊 塾之材料係為鋁或銅,其’表面會產生鋁氧化層或銅氧化 層’易使探針在探觸時電性接觸不良。) 'To electrically contact the pads of the integrated circuit on the wafer. The material of the welding pad is known to be aluminum or copper. Its' surface will produce an aluminum oxide layer or a copper oxide layer', which will easily cause the probe to detect Poor electrical contact when touched.
在美國專利第6, 307, 392號「探測卡及其製造方法 中,揭示一種探測卡,係包含有一基板、一引指(lead ) 及一接觸端,該探測卡之形成方式係先提供一引指支撐 板’該引指支撐板係蝕刻形成有一v形或U形之凹槽,以供 接觸端之形成,在引指支撐板上形成一引指層,如濺鍍 (sputtering)形成之銅層,再提供一基板,該基板係習 知地形成有探測電路,並在該引指層之一端形成連接部, 以電,連接該基板,最後,將基板移離該引指支撐板,此 時L該引指層會剝離引指支撐板,故在基板上即形成有一 引指’該引指之一端係具有V形或U形之接觸端,另一端則 $以連接部電性連接至該基板,且連接部之高度係提供引 指之彈性空間,以使接觸端彈性接觸一電子裝置,然而,In U.S. Patent No. 6,307,392 "Probe card and its manufacturing method, a probe card is disclosed, which includes a substrate, a lead and a contact end. The method of forming the probe card is to provide a Finger support plate 'The finger support plate is etched with a v-shaped or U-shaped groove for the formation of the contact end, and a finger layer is formed on the finger support plate, such as by sputtering A copper layer, and a substrate is provided. The substrate is conventionally formed with a detection circuit, and a connecting portion is formed at one end of the finger layer to electrically connect the substrate. Finally, the substrate is removed from the finger support plate. At this time, the index finger layer will peel off the index finger support plate, so a index finger is formed on the substrate. One end of the index finger has a V-shaped or U-shaped contact end, and the other end is electrically connected by a connecting portion. To the substrate, and the height of the connecting portion is to provide a flexible space for the fingers to make the contact end elastically contact an electronic device, however,
第6頁 五、發明說明(2) ί 2成方法而言’在將基板移離該引指支撐板時,因引指 ^柘形成於引丸支撐板,%指層未必能順利地剝離刃指支 ^ & Μ且可忐會產生引指層斷裂之問題,另就探測卡之探 針結構而言,1 # ώ 一以扣t 彳卜心秌 提供之彈性空間俨觸一雷^接觸端所形成,藉由連接部 該?/指係無二二^ p .裝置’在長久使用的情況下, 此外,該5;、指L ί在接近連接部處響折或斷裂, 時會造成短^,因d,超過㈣之間⑯’否則在測試 墊分佈之電子裝置。'"二采針較不適用於探測具高密度焊 【發明目的及概要】 頭,種具彈性探針之探測 含一金屬層及一支撐層,該φ、^ ^之彳木針,每一探針係包 尖端部,該金屬爲έ q ^支撐層係呈彎曲延伸且具有一 因此,該些彎心之該支撐層之該尖端部, 之彈性支揮,且能:::;!:::;些ΐί層提供一良好 接觸。 二金屬層對一丰導體晶圓之電性 号务明之^ 欠 法,其係先在基板上形fj:-種楝測頭之探針形成方 成像技術形成第二光阻 ^阻,另將一光阻層以微影 光阻層圖案化,以在第j形成一支樓光阻層,將該支撐 支撐面形成支撐層,再妒成面及第二光阻之弧形 移除第一光阻與第_ y i ;支撐層之金屬層,接著 具有彈性支撲之ΪΓ十阻,故可在一基板上一次形成多個 針,以供電性接觸-半導體晶圓= 577989 五、發明說明(3) 墊。 依本發明之探測頭’係包含有一基板及複數個探針, 該些探針係形成於該基板之一表面,該基板之表面係形成 有複數個連接墊,每一探針具有一金屬層及一支撐層,其 中每一支撐層係呈彎曲延伸且具有一尖端部,該些金屬^ 之一端係結合於對應之連接墊,另一端則係延伸至對應之 支撲層之尖端部,該些支撐層係形成於對應之金屬層之一 側表面,以支撐該些金屬層。 • f本發明之探測頭之探針形成方法,其步驟係包含 ,·提供一基板,如矽基板、印刷電路板或陶瓷基板等, ^基板,一表面係形成有複數個連接墊;形成複數個第一 執阻於j基板之表面,該些第一光阻係不覆蓋該些連接 其k且Ϊ 一第一光阻係具有一支撐面;形成一光阻層於該 二右^ ^,且將该光阻層微影成像,使該基板之表面形 i;;個!二光阻,每-第二光阻係具有-弧形支撐 阻及該些第阻層於該基板之表面並覆蓋該些第一光 -將該—支撑一光阻支/光阻層之厚度係介於25〜2心 形成於該歧第_ /ΡΗ圖案化,以形成複數個支撐層,其係 樓面;形上形支樓面且延伸至第-光阻之支 面之連接塾並覆蓋,該些金屬層係結合於該基板表 該些第二光阻,而i之支撐層;及移除該些第一光阻及 探針。 違些支撑層與該些金屬層形成複數個 【發明詳細說明】5. Description of the invention on page 6 (2) For the 20% method, when the substrate is moved away from the index finger support plate, the index finger ^ 柘 is formed on the index shot support plate, and the% finger layer may not be able to peel off the blade smoothly. Fingers ^ & Μ and may cause the problem of finger breakage. In addition, as for the probe structure of the probe card, 1 # FREE End formed by connecting part? / Refers to no two two ^ p. Device 'in the case of long-term use, in addition, the 5 ;, refers to L ί bends or breaks near the connection, which will cause short ^, because d, between ㈣ ⑯'Electronic devices otherwise distributed on the test pad. '" The second picking needle is less suitable for detecting high-density welding. [Objective and summary of the invention] The probe with an elastic probe contains a metal layer and a support layer. The φ, ^ ^ alder needles, each A probe system includes a tip portion, and the support layer is bent and extended. Therefore, the tip portion of the support layer of the curved centers is elastically supported, and can :::;! ::: Some layers provide a good contact. The electrical method of the two metal layers to one Feng conductor wafer is clear. The method is to first form a fj on the substrate: a probe forming method of the probe head to form a second photoresistor. A photoresist layer is patterned with a lithographic photoresist layer to form a photoresist layer on the jth floor, the supporting support surface is formed into a supporting layer, and the first and second photoresist arcs are removed to remove the first The photoresist and the _ yi; metal layer of the support layer, followed by the 支 Γ ten resistance of the elastic support, so multiple pins can be formed on a substrate at a time for power supply contact-semiconductor wafer = 577989 V. Description of the invention ( 3) pad. The probe head according to the present invention includes a substrate and a plurality of probes. The probes are formed on a surface of the substrate. The surface of the substrate is formed with a plurality of connection pads. Each probe has a metal layer. And a support layer, wherein each support layer is curved and extended and has a tip portion, one end of the metal ^ is connected to the corresponding connection pad, and the other end is extended to the tip portion of the corresponding support layer, the The support layers are formed on one side surface of the corresponding metal layer to support the metal layers. • f. The method for forming a probe of a probe according to the present invention includes the steps of: providing a substrate, such as a silicon substrate, a printed circuit board, or a ceramic substrate; a substrate, and a plurality of connection pads formed on a surface thereof; First resists are on the surface of the j substrate, the first photoresist systems do not cover the connections k and 第一 a first photoresist system has a supporting surface; a photoresist layer is formed on the two right sides ^, And lithography the photoresist layer to make the surface of the substrate i ;; a! Two photoresistors, each-the second photoresistor has-an arc-shaped supporting resistor and the first resistive layers on the surface of the substrate and covers the first light-supporting the thickness of a photoresistive branch / photoresistive layer It is formed between the 25 ~ 2 cores in the qi / Py pattern to form a plurality of supporting layers, which are the floors; the connection between the branch-shaped floor and the branch-plane of the photo-resistance. Cover, the metal layers are bonded to the second photoresist on the substrate and the support layer of i; and the first photoresist and the probe are removed. A plurality of support layers are formed with the metal layers [Detailed description of the invention]
第8頁 577989 五、發明說明(4) 請參閱所附圖式,本發明將列舉以下之實施例說明: 在本發明之一具體實施例中,第1圖至第7圖係為一探 測頭100之探針120形成方法之截面圖。 首先,如第1圖所示,提供一基板丨1 〇,如矽基板 (silicon substrate)、印刷電路板(printed circuit board,PCB)或陶兗基板(ceramic substrate)…等, 在本實施例中,該基板11 0係可為矽基板、陶瓷基板、聚 亞醯胺(poly imide)薄膜或玻璃纖維強化樹脂材質 (FR-4 )之印刷電路板,基板11〇之一表面丨丨1係形成有複 數個連接墊112 (contact pads),如銅墊(Cu pad)或 姑墊(A1 pad )等等,該些連接墊11 2係可呈格狀陣列、 中央排列或周邊排列,並以網版印刷(s c r e e n p r i n t i n g )或微影成像技術(photo 1 i thogr aphy,係包含有曝光、 顯影4工程)等方式’在基板11 〇之表面111形成有複數個 第一光阻20 0,該些第一光阻2〇〇係不覆蓋該些連接墊 112,且具有一支撐面210,較佳地,該些支撐面21〇與該 基板11 0之表面111係互呈近似垂直,在本實施例中,該些 第一光阻2 0 0係為一種經曝光不易於分解之負性光阻 (negative photoresist)或由感光性乾膜〔dry film〕 形成。 接著’如第2圖所示,以旋塗(spin coating)、印 刷(printing)或喷塗(Spray coating)等方式在基板 11 0之表面111形成一光阻層3 〇 〇,較佳地,該光阻層3 〇 〇係 不覆蓋且略低於該些第一光阻2〇〇,在本實施例中,該光Page 8 577989 V. Description of the invention (4) Please refer to the attached drawings. The present invention will enumerate the following embodiments: In a specific embodiment of the present invention, Figures 1 to 7 are probe heads A cross-sectional view of the method for forming the probe 120 of 100. First, as shown in FIG. 1, a substrate is provided, such as a silicon substrate, a printed circuit board (PCB), or a ceramic substrate. In this embodiment, The substrate 110 can be a silicon substrate, a ceramic substrate, a polyimide film, or a glass fiber reinforced resin (FR-4) printed circuit board. One surface of the substrate 110 can be formed. There are a plurality of connection pads 112 (contact pads), such as Cu pads or A1 pads, etc. The connection pads 11 2 can be arranged in a grid array, a central arrangement or a peripheral arrangement. Screen printing or photolithography (photo 1 thogr aphy, including exposure and development 4 processes) and other methods, 'the surface 111 of the substrate 11 is formed with a plurality of first photoresistors 20 0, these A photoresist 200 does not cover the connection pads 112 and has a support surface 210. Preferably, the support surfaces 21 and the surface 111 of the substrate 110 are approximately perpendicular to each other. In this embodiment, In the first photoresist 2 0 0 is an exposed Negative photoresist, which is not easily decomposed, is formed of a photosensitive dry film. Next, as shown in FIG. 2, a photoresist layer 300 is formed on the surface 111 of the substrate 110 by spin coating, printing, or spray coating. Preferably, The photoresist layer 300 is not covered and is slightly lower than the first photoresists 200. In this embodiment, the photoresist layer
11^ 第9頁 577989 五、發明說明(5) 阻層300係為一種經曝光會分解之正性光阻(p〇si tive Photoresist ),將該光阻層3〇Q微影成像,其係以該些第 二光阻20 0為光罩(mask ),將一光源(如紫外線)照射 垓光阻層3 0 0,以曝光該光阻層3 〇 〇,再經顯像即如第3圖 f斤不’在基板1 1 〇之表面11 1形成有複數個第二光阻3丨〇, 該些第二光阻310係不覆蓋該基板11〇之該些連接墊112, 且每一第二光阻310係具有一弧形支撐面31ι。 之後’如第4圖所示,以旋塗、印刷或喷塗等方式在 該基板110之表面111上形成一支撐光阻層4〇〇,該支撐光 阻層400係覆蓋該些第一光阻2〇〇及該些第二光阻31〇 ,在 本實施例中’該支撐光阻層4〇〇之厚度係介於25〜250 //m, 其係為一種負性光阻(negative ph〇t〇resist ),且包含 有南介電係數之高分子聚合物(如聚亞醯胺、苯環丁烯或 其它)與光感性物質。 再如第5圖所示,經由微影成像技術,將該支撐光阻 層400圖案化,以形成複數個支撐層123,其係形成於該些 第二光阻310之弧形支撑面311且延伸至第一光阻2〇〇之支 撐面2 1 0,每一支撐層1 23係呈彎曲延伸且具有一尖端部 124 ’較佳地,該支撐層123之一端係結合於該基板11〇之 表面111之非電極部(即未形成有連接墊丨丨2之部位)。 然後’如第6圖所示,形成複數個金屬層丨2 1於該基板 110,該些金屬層121係為鎳、金、銀、銅或把等金屬,其 係覆蓋於對應之支撑層123,每一金屬層121之一端係結合 於該基板11 0之對應連接墊11 2,其另一端則係延伸至對應11 ^ Page 9 577989 V. Description of the invention (5) The resist layer 300 is a positive photoresist that will decompose upon exposure. The photoresist layer 30Q lithography is imaged. The second photoresist 200 is used as a mask, and a light source (such as ultraviolet rays) is irradiated to the photoresist layer 300 to expose the photoresist layer 300. After development, the image is as shown in FIG. 3 In the figure, a plurality of second photoresistors 3 are formed on the surface 11 1 of the substrate 1 10, and the second photoresistors 310 do not cover the connection pads 112 of the substrate 11 and each The second photoresist 310 has an arc-shaped supporting surface 31m. Afterwards, as shown in FIG. 4, a support photoresist layer 400 is formed on the surface 111 of the substrate 110 by spin coating, printing, or spray coating. The support photoresist layer 400 covers the first light. Resistance 200 and the second photoresist 31. In this embodiment, the thickness of the supporting photoresist layer 400 is between 25 and 250 // m, which is a negative photoresist (negative ph〇t〇resist), and contains a high-molecular polymer (such as polyimide, phenylcyclobutene or other) with a dielectric constant and a photo-sensitive substance. As shown in FIG. 5, the photoresist layer 400 is patterned by lithography imaging technology to form a plurality of support layers 123, which are formed on the arc-shaped support surfaces 311 of the second photoresists 310 and Each supporting layer 123 extends to the supporting surface 2 10 of the first photoresist 200. Each supporting layer 123 is curved and has a tip portion 124. Preferably, one end of the supporting layer 123 is coupled to the substrate 11. The non-electrode portion of the surface 111 (that is, the portion where the connection pads 2 and 2 are not formed). Then, as shown in FIG. 6, a plurality of metal layers are formed on the substrate 110. The metal layers 121 are nickel, gold, silver, copper, or metal, which are covered with the corresponding support layer 123. One end of each metal layer 121 is bonded to the corresponding connection pad 11 2 of the substrate 110, and the other end is extended to the corresponding
IH1 第10頁 577989 五、發明說明(6) 之该支#層1 2 3之該尖端部1 2 4,習知地,形成該此金屬声 121之方式係有:一、以電鍍(platlng)、》鑛二金屬層 (evaporation)或濺鍍(sputtering)等方式在基板u〇 上形成一金屬覆蓋層(圖未繪出),並在金屬覆蓋層上形 成一層光阻,經曝光顯像後,該光阻係位於需形成金屬層 121之部位上,再蝕刻(etching )該金屬覆蓋層,以形成 複數個金屬層121 ;或者,二、在基板11〇上形成一層光阻 (圖未繪出)’經曝光顯像後,該光阻係具有複數個開 口,該些開口係對應於需形成金屬層121之部位,再以沉 積或電鑛等方式在每一開口處形成金屬層丨21,之後,移 除光阻,即可形成複數個覆蓋於對應支撐層丨23之金屬層 121。 曰 最後,如第7圖所示,移除該些第一光阻2 〇 〇及該些第 二光阻310,即形成一具有探針120之探測頭丨00,該些探 針120係由該些金屬層121與該些支撐層123所形成,其中 該些支樓層1 2 3係形成於對應金屬層1 2 1之一側表面1 2 2 , 以提供良好之彈性支撐。 另如第8圖所示,本發明之探測頭1 〇 〇係結合於一探測 卡(probe card)之介面卡130上,並電性連接至一測試 設備(圖未繪出),該探測頭1 0 0之該些探針1 2 〇係供電性 接觸一受測晶圓5 0 0,以測試該晶圓5 0 0,其中該受測晶圓 5 0 0係為記憶體、微處裡器或微控制器等之晶圓,該晶圓 500係具有一主動面511 (active surface)及一非主動面 512 (passive surface),在該主動面511係形成有複數IH1 Page 10 577989 V. Description of the invention (6) The branch #layer 1 2 3 and the tip 1 2 4 of the invention. Conventionally, the way to form the metal sound 121 is: 1. plating (platlng) 》》 Mineral metal layer (evaporation) or sputtering (sputtering) and other methods to form a metal cover layer (not shown) on the substrate u0, and a layer of photoresist is formed on the metal cover layer. After exposure and imaging The photoresist is located on the portion where the metal layer 121 is to be formed, and then the metal cover layer is etched to form a plurality of metal layers 121; or, a photoresist is formed on the substrate 11 (not shown) (Out) 'After exposure and development, the photoresist system has a plurality of openings, which correspond to the portion where the metal layer 121 is to be formed, and then a metal layer is formed at each opening by means of deposition or electric ore 21 After that, the photoresist is removed to form a plurality of metal layers 121 covering the corresponding support layers 23. Finally, as shown in FIG. 7, the first photoresist 200 and the second photoresist 310 are removed to form a detection head with a probe 120. The probe 120 is formed by The metal layers 121 and the support layers 123 are formed, wherein the branch floors 1 2 3 are formed on one side surface 1 2 2 of the corresponding metal layer 1 2 1 to provide good elastic support. As shown in FIG. 8, the probe head 100 of the present invention is combined with the interface card 130 of a probe card, and is electrically connected to a test device (not shown in the figure). The probes 1 2 0 of 100 are electrically contacted with a test wafer 500 to test the wafer 500. The test wafer 500 is a memory and a micro area. Wafer or microcontroller, the wafer 500 has an active surface 511 (active surface) and a non-active surface 512 (passive surface), a plurality of which are formed on the active surface 511
第11頁 577989 五、發明說明(7) 個焊墊51 3 (bonding pads ),在測試過程中,該受測晶 圓5 0 0係被一晶圓載具6 〇 〇承載固定,該探測頭1 〇 〇之該些 探針120係電性接觸該受測晶圓5〇〇之該些焊墊513,每— 探針120係具有金屬層121及支撐層123,該些金屬層ΐ2ι ^觸對應之焊墊513,冑該探測則町M探觸晶圓5〇〇、 曰,,钂些支撐層1 2 3係提供良好之彈性支樓 120之金屬層121且有極祛夕^ 文存使4些彳木針 金屬氧化# “ Γ 無性,㊣穿刺焊塾513表面之 圓500之電性接觸。一一 層),而增進對受測晶 故本發明之保護範圍當 _ 者為準,任何熟知此項技藝*,=、:專利範圍所界定 範圍内所作之任何變化與修 不脫離本發明之精神和 圍。 /、U ,均屬於本發明之保護範 第12頁 _ 577989Page 11 577989 V. Description of the invention (7) Bonding pads 51 3 (bonding pads). During the test, the wafer under test 500 was fixed by a wafer carrier 600, and the probe head 1 The probes 120 are electrically contacted with the solder pads 513 of the wafer under test 500. Each of the probes 120 has a metal layer 121 and a support layer 123, and the metal layers are corresponding to each other. The solder pad 513, the probe is the M touch wafer 500, that is, the support layer 1 2 3 is a metal layer 121 that provides a good elasticity of the branch 120 and has a very good effect. 4 彳 木 针 金属 oxidation # "Γ is asexual, the electrical contact of circle 500 on the surface of piercing weld 513. One layer), and to improve the protection scope of the test crystal, the subject of the present invention shall prevail, Anyone familiar with this technique *, = ,: Any changes and modifications made within the scope defined by the patent scope will not depart from the spirit and scope of the present invention. /, U, belong to the protection scope of the present invention. Page 12_577989
第1 圖 依本發明 第2 圖 依本發明 第3 圖 依本發明 第4 圖 依本發明 第5 圖 依本發明 第6 圖 依本發明 第7 圖 依本發明 形成之探 第8 圖: 依本發明 【圖 號說明】 100 探測頭 110 基板 111 表面 120 探針 121 金屬層 123 支撐層 130 介面卡 200 第一 _光阻 300 光阻層 400 支撐光阻層 500 晶圓 511 主動面 600 栽具 ’形成稷數個第一光阻之基板截面圖 ’形成一光阻層之基板截面圖; ,形成複數個第二光阻之基板截面圖 ’形成了支撐光阻層之基板截面圖; ’形成複數個支撐層之基板截面圖; ,形成複數個金屬層之基板截面圖; ,移除該些第一光阻與該些第二光阻 測頭截面圖;及 ,忒探測頭探觸一受測晶圓之截面圖 11 2連接墊 1 2 2側表面 124尖端部 210支撐面 310第二光阻 311弧形支撐面 512非主動面 513測試電極Figure 1 according to the present invention, Figure 2 according to the present invention, Figure 3 according to the present invention, Figure 4 according to the present invention, Figure 5 according to the present invention, Figure 6 according to the present invention, Figure 7 according to the present invention, figure 8 according to the present invention, figure 8: The invention [Illustration of the drawing number] 100 probe head 110 substrate 111 surface 120 probe 121 metal layer 123 support layer 130 interface card 200 first _ photoresistor 300 photoresistor layer 400 support photoresistor layer 500 wafer 511 active surface 600 tool 'Sectional view of a substrate forming a plurality of first photoresists', Sectional view of a substrate forming a photoresistive layer;, Sectional view of a substrate forming a plurality of second photoresist's forming a sectional view of a substrate supporting the photoresistive layer; Sectional views of substrates of the plurality of support layers;, Sectional views of substrates forming the plurality of metal layers;, Sectional views of the first photoresistors and the second photoresistive probe heads; and Cross section of the test wafer 11 2 Connection pads 1 2 2 Side surface 124 Tip 210 Support surface 310 Second photoresist 311 Curved support surface 512 Non-active surface 513 Test electrode
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CN101750525B (en) * | 2008-12-22 | 2012-07-04 | 京元电子股份有限公司 | Manufacture method of test socket and elastic test probe used by same |
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CN101750525B (en) * | 2008-12-22 | 2012-07-04 | 京元电子股份有限公司 | Manufacture method of test socket and elastic test probe used by same |
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