1220280 玖、發明說明： 【發明所屬之技術領域】 j 本發明是有關於一種可撓性基材圖案轉移製程，尤· 指一種以具有導電圖案之模板壓印至高分子阻劑層（抗· 阻層一RESIST)而進行圖案轉移之後，再接著至可撓性 基材上，如此，可避免在傳統熱壓導電圖案轉移製程中， 直接加熱可撓性基材以軟化高分子阻劑層（抗阻層一 RESIST)而導致可撓性基材受熱變形。 _ 【先前技術】 按，目前一般習用之奈米刻印蝕刻技術（NIL)，係將· 壓印模製（compression molding)的技術，應用在半導-體蝕刻的圖案轉印中，因此，也逐漸受到重視；然而此 種技術與一般刻印章十分類似，因為其係先以傳統微蝕 刻（光罩，電子束，聚焦離子束等）技術將所要轉印的圖 案（負片）製板於某種模板材料（通常為矽晶圓）上，然後籲 以（PMMA--Polymethyl methacrylate，一 種高分子壓克 力材料）當作「印泥」也就是「阻抗層（RESIST)」塗 佈在元件基板材料上，之後再利用特殊的儀器，施以精 確控制的壓力及溫度，而將模板壓印在元件基板上的 PMMA，如此，模板上的圖案（正片）就轉印到高分子壓克 力材料（PMMA )上，接著經過乾式蝕刻如電漿方式 (PLASMA)或等向性離子餘刻方式（RIE—Reactive ionic etching)進行蝕刻，就可得到所需的圖案； 10 1220280 …而以上述之技術來說，該奈米壓印微影是一種新的 微影，術’它捨棄傳統的光學微影技術，其具有價格低 廉、同產此的優點，且其應用之範圍非常廣泛，如可應· 用於製造可撓式基材之顯示器（例如··電子報紙，可翻 閱及摺疊式電子書籍）；或電子及光電工業（例如··軟質 印刷電路板製程），所以奈米壓印微影技術無疑是下一世 代液晶顯示器製程中重要的步驟。 但疋在傳統的顯示器製程中均以玻璃材料（玻璃轉 移/皿度（Tg) >7GGC)為基材，對於在玻璃材料上進 銦錫氧化物導電膜（ΙΤ0)導電層塗佈，此技術將改變傳 統光學微影製程。 m 雖然’此技術在目前可改變傳統光學微影製程，不 過此技術其最重要的製程就是在製作導電圖案時，必須 要加熱基材上之高分子材料如壓克力材料（pMMA)、聚碳 酸脂樹脂（PC)、聚苯乙烯樹脂（pS)等，使其超過其「玻 璃轉化溫度-Tg」50〜80°C以上，而使高分子薄膜層軟化擊 才能接續下一製程之模板加壓以及圖案轉移的工作，換 言之，若要加熱壓克力材料（PMMA)使之可以進行奈米 壓印微影製程，則必須要加熱至17〇〜20〇°C (PMMA Tg: 105〜1201)，對於在矽晶片（IC製程），或一些無機材 (石英玻璃：LCD製程，主要在石英玻璃基材上製作銦錫 氧化物導電膜一ΙΤ0導電層圖案）為基材上製作圖案時， 運用此製程在製造上並沒有問題； 但是，應用於製造電子書，電子報等輕型顯示器的 11 1220280 發展中，此類電子產品主要的要求就是輕、薄，以及可 彎曲為其重點，所以，在製造此類（可撓性基板）顯示 器所需要的基材材料就非高分子材料不可；而目前所生 產的可撓性基板高分子材料其玻璃轉移溫度（Tg)(如第 6圖所示，其資料來源：電子與材料第五期—塑膠lcd技 術現況與其市場），而由於該熱壓技術係必須加熱基材， 使基材上的可抗蝕刻阻劑超過其玻璃轉移溫度玻璃轉移 溫度（Tg)，才可以進行圖案壓印，而由該第6圖中即可 明顯知道，若選擇任何一種塑膠基材進行奈米壓印微景P 均會因為高熱而使可撓性基板變形或分解，所以目前之 熱壓技術，並無法在可撓性基材上進行圖案轉移。 【發明内容】 、因此，本發明之主要目的在於可以具有導電圖案之 模板壓印至高分子阻劑層（抗阻層一 RESIST)而進行圖 案轉移之後，再接著至可撓性基材上，如此，即可避免 在傳統，壓導電圖案轉移製程中，直接加熱可撓性基材春 以軟化南分子阻劑層（抗阻層一 RESIST)而導致可撓性 基材受熱變形。 70 為達上述之目的，本發明係-種可撓性基材圖案轉移製 程，其包括有下列步驟： :驟—導電薄闕，並於該導電薄膜層上成形一 南分子阻劑層（抗阻LIST)作為前驅板材； 步驟一 ·取-具有導電圖案之模板，利用該模板直接壓 12 1220280 印於高分子阻劑層（抗阻層一RESIST)上，而進行模板 上導電圖案之轉移’使該南分子阻劑層（抗阻層一 RESIST)上被壓印有導電圖案； · 步驟三：取一可撓性基材，並將上述已轉移導電圖案之· 前驅板材（導電薄膜層及而分子阻劑層（抗阻層一 RESIST))之導電薄膜層接著至可撓性基材上； 步驟四：將接著至可撓性基材之前驅板材（導電薄膜層 及高分子阻劑層（抗阻層一RESIST))上之具有導電圖案 之高分子阻劑層進行蝕刻，使該導電薄膜層藉由高分Θ 阻劑層（抗阻層一RESIST)上之導電圖案而有被蝕刻有 相同之導電圖案； · 步驟五：最後剝除殘餘之高分子阻劑層（抗阻層一_ RESIST)，即可於該導電薄膜層上得到由高分子阻劑層 (抗阻層一 RESIST)轉移之導電圖案，而使該導電薄膜 層之導電圖案形成在可撓性基材上；藉此，可使本發明 避免在熱壓導電圖案轉移製程中，直接加熱可撓性基材φ 以軟化高分子阻劑層（抗阻層一 RESIST)而導致可撓性 基材受熱產生變形。 【實施方式】 請參閱『第1〜5圖』所示，係本發明之步驟一示意 圖、本發明之步驟二示意圖、本發明之步驟三示意圖、 本發明步驟四之示意圖、本發明之步驟五示意圖。如圖 所示：本發明係一種可撓性基材圖案轉移製程，可以具 13 有導電圖案31之模板3壓印至高分子阻劑層2(抗阻 層一 RESIST)而進行圖案轉移之後，再接著至可撓性基 材4上，如此，即可避免在傳統熱壓導電圖案轉移製程· 中，直接加熱可撓性基材4以軟化高分子阻劑層5 (抗· 阻層一 RESIST)而導致可撓性基材4受熱變形。 而本發明之可撓性基材圖案轉移製程，其係包括有 下列步驟： 步驟一 ··取一導電薄膜層丄，並於該導電薄膜層工 上成形一高分子阻劑層2 (抗阻層一RESIST)作為前# 板材，而該高分子阻劑層2可以濺鑛或塗佈之方式設置 於導電薄膜層1上，且該高分子阻劑層2 (抗阻層一· RESIST)可為抗乾式或濕式蝕刻及可塑性之材料所製成 (如第1圖所示）； ^步驟二：取一具有導電圖案3 1之模板3，利用該 模板3直接壓印於高分子阻劑層2 (抗阻層—rES I 、 士’而進行模板3上導電圈案3 i之轉移’而其 杈板3可在室溫或加熱之後，壓印至高分子阻劑層2 (抗 阻層-RESIST)上，使該高分子阻劑層2 (抗日阻層二 RESIST)上被壓印有導電圖案21 (如第2及2一1圖 所示）； 步驟三：取一可撓性基材4，而該可撓性基材4可 依所需選擇其厚薄及種類’並將上述已轉移導電圖案2 1之前驅板材（導電薄膜層i及高分子阻劑層2(抗阻 層-RESIST))之導電薄膜層丄接著至可撓性基材4上，1220280 发明 Description of the invention: [Technical field to which the invention belongs] j The present invention relates to a flexible substrate pattern transfer process, in particular, a method of embossing a polymer resist layer with a template having a conductive pattern (anti-resistance Layer-resist) and pattern transfer, and then onto the flexible substrate. In this way, in the traditional hot-press conductive pattern transfer process, it is possible to avoid directly heating the flexible substrate to soften the polymer resist layer (resistance Resistance layer (RESIST), which causes the flexible substrate to deform under heat. _ [Previous technology] According to the current commonly used nano-imprint etching technology (NIL), the technology of compression molding is applied to the pattern transfer of semiconductor-lithography. Therefore, Gradually attracted attention; however, this technology is very similar to general stamping, because it first uses traditional micro-etching (photomask, electron beam, focused ion beam, etc.) technology to plate the pattern (negative film) to be transferred to a certain type The template material (usually a silicon wafer), and then called (PMMA--Polymethyl methacrylate, a polymer acrylic material) as "printing pad", that is, "resistance layer" is coated on the component substrate material Then, using a special instrument to apply precisely controlled pressure and temperature, the template is embossed on the element substrate PMMA. In this way, the pattern (positive film) on the template is transferred to the polymer acrylic material (PMMA ), Followed by dry etching such as plasma (PLASMA) or isotropic ion etching (RIE—Reactive ionic etching) to obtain the desired pattern; 10 1220280… Based on the above-mentioned technology, the nano-imprint lithography is a new type of lithography. It abandons the traditional optical lithography technology. It has the advantages of low cost and same production, and its application range is very wide. ， Such as coping · used to make flexible substrate displays (such as electronic newspapers, flipping and folding electronic books); or electronics and optoelectronics industries (such as soft printed circuit board manufacturing process), so nanometer Imprint lithography is undoubtedly an important step in the next-generation LCD display process. However, in the traditional display manufacturing process, glass materials (glass transfer / density (Tg) > 7GGC) are used as substrates. For the coating of the conductive layer of indium tin oxide conductive film (ITO) on the glass material, this Technology will change the traditional optical lithography process. m Although 'this technology can currently change the traditional optical lithography process, the most important process of this technology is that when making conductive patterns, it is necessary to heat polymer materials such as acrylic materials (pMMA), polymer Carbonate resin (PC), polystyrene resin (pS), etc., make it exceed its "glass transition temperature-Tg" by more than 50 ~ 80 ° C, and soften the polymer film layer to continue the template addition of the next process In other words, if acrylic material (PMMA) is to be heated to enable nanoimprint lithography, it must be heated to 17 ～ 20 ° C (PMMA Tg: 105 ~ 1201). ), When making a pattern on a silicon wafer (IC process), or some inorganic materials (quartz glass: LCD process, mainly indium tin oxide conductive film ITO conductive layer pattern on the quartz glass substrate), There is no problem in manufacturing using this process; however, in the development of 11 1220280 used in the manufacture of light displays such as e-books and newsletters, the main requirements for this type of electronic products are lightness, thinness, and bendability. Therefore, the base material required for the manufacture of such (flexible substrate) displays is not a polymer material; the currently produced flexible substrate polymer materials have a glass transition temperature (Tg) (such as the sixth As shown in the figure, its data source: Electronics and Materials Phase 5-Current status of plastic LCD technology and its market), and because of this hot pressing technology, the substrate must be heated so that the anti-etching resist on the substrate exceeds its glass transition temperature. Only the glass transition temperature (Tg) can be used for pattern embossing, and it can be clearly seen from Figure 6 that if any kind of plastic substrate is selected for nano-imprint micro-view P, it will be flexible due to high heat. The substrate is deformed or decomposed, so the current hot pressing technology cannot perform pattern transfer on a flexible substrate. [Summary of the Invention] Therefore, the main purpose of the present invention is to allow a template with a conductive pattern to be imprinted onto a polymer resist layer (resistance layer-RESIST) for pattern transfer, and then to a flexible substrate. In this way, in the traditional, compressive conductive pattern transfer process, the flexible substrate can be directly heated to soften the southern molecular resist layer (resistance layer-RESIST) and cause the flexible substrate to be deformed by heating. 70 In order to achieve the above-mentioned object, the present invention is a flexible substrate pattern transfer process, which includes the following steps: Step-conductive thin film, and a south molecular resist layer (anti-mold) is formed on the conductive thin film layer. LIST) as a precursor plate; Step 1-Take a template with a conductive pattern, use this template to directly press 12 1220280 and print on the polymer resist layer (resistance layer RESIST), and transfer the conductive pattern on the template ' Make the south molecular resist layer (resistance layer RESIST) embossed with a conductive pattern; Step 3: Take a flexible substrate and transfer the conductive pattern of the precursor sheet (conductive film layer and The conductive film layer of the molecular resist layer (resistance layer-RESIST) is then attached to the flexible substrate; Step 4: the sheet (the conductive film layer and the polymer resist layer) is driven to the flexible substrate before (Resistance layer RESIST)) is etched with a polymer resist layer having a conductive pattern, so that the conductive thin film layer is etched by the conductive pattern on the high score Θ resist layer (resistance layer RESIST) Have the same conductive pattern; Step 5: Finally, the remaining polymer resist layer (resistance layer _RESIST) is peeled off, and a conductive pattern transferred from the polymer resist layer (resistance layer RESIST) can be obtained on the conductive thin film layer to make the conductive The conductive pattern of the thin film layer is formed on the flexible substrate; thereby, the present invention can avoid directly heating the flexible substrate φ in the hot-press conductive pattern transfer process to soften the polymer resist layer (resistance layer) -RESIST), which causes the flexible substrate to deform when heated. [Embodiment] Please refer to "Figures 1 to 5", which are a schematic diagram of step one of the present invention, a schematic diagram of step two of the present invention, a schematic diagram of step three of the present invention, a schematic diagram of step four of the present invention, and a fifth step of the present invention. schematic diagram. As shown in the figure: The present invention is a flexible substrate pattern transfer process. The template 3 with a conductive pattern 31 can be embossed onto a polymer resist layer 2 (resistance layer RESIST), and then pattern transfer is performed. Then go to the flexible substrate 4, so that you can avoid directly heating the flexible substrate 4 to soften the polymer resist layer 5 (anti-resistive layer-resist) in the traditional hot-press conductive pattern transfer process. As a result, the flexible substrate 4 is deformed by heat. The flexible substrate pattern transfer process of the present invention includes the following steps: Step 1 · Take a conductive thin film layer, and form a polymer resist layer 2 (impedance resistance) on the conductive thin film layer. Layer 1 RESIST) as the front # sheet, and the polymer resist layer 2 can be set on the conductive thin film layer 1 by splatting or coating, and the polymer resist layer 2 (resistance layer 1 RESIST) can be Made of materials that are resistant to dry or wet etching and plasticity (as shown in Figure 1); ^ Step 2: Take a template 3 with a conductive pattern 31, and use this template 3 to directly imprint on the polymer resist Layer 2 (anti-resistance layer-rES I, taxi 'and transfer the conductive ring case 3 i on the template 3' and its plate 3 can be imprinted to the polymer resist layer 2 (anti-resistance layer) at room temperature or after heating -RESIST), so that the polymer resist layer 2 (resistance resistance layer 2 RESIST) is embossed with a conductive pattern 21 (as shown in Figures 2 and 2-11); Step 3: Take a flexible base Material 4, and the flexible substrate 4 can be selected according to its thickness, thickness, and type 'and the previously transferred conductive pattern 2 1 I layer 2 and a polymer resist layer (resist layer anti -RESIST)) Shang then the conductive thin film layer on a flexible substrate to 4,