567401 玖 、發明說明： 【發明所屬之技術領域】 本發明是有關於一種低〜 程’尤指-種，可避免製程·中w:性基材圖案轉移製 層（抗阻層-隱T)以C軟化抗蝕刻阻劑 可撓性基材受熱產生變形，如1層⑤溫製程而導致 基材之厚薄、種類。 可於製作時任意選擇 【先前技術】 按，目前一般習用之奈米M匕* M ^^(compression ， 體姓刻的圖案轉印中，因此，^的技術，應用在半導 種技術與-般刻印章十分類* 到重視，然而此 刻（光罩，電子束，聚焦離為其錢以傳統微鞋 ⑽請板於某種模板材料(通==: 以（PMMA--Polymethyl methacrylate，一種高分子壓克< 力材料）當作「印泥」也就是「阻抗層（RESIST)」塗 佈在元件基板材料上，之後再利用特殊的儀器，施以精 確控制的壓力及溫度，而將模板壓印在元件基板上的 PMMA，如此，模板上的圖案（正片）就轉印到高分子壓克 力材料（PMMA )上，接著經過乾式蝕刻如電漿方式 (PLASMA)或等向性離子蝕刻方式（RIE—React i ve ionic etching)進行蝕刻，就可得到所需的圖案； 而以上述之技術來說，該奈米壓印微影是一種新的 10 567401 1術’匕捨棄傳統的光學微影技術，其具有價格低 田、^產能的優點’且其應用之範圍非常廣泛，如可應 於•造可撓式基材之顯示器（例如：電子報紙可翻 閱及指疊式電子書籍）；或電子及光電卫# (例如：軟質 印刷電路板製程），所以奈米壓印微影技術無疑是下一世 代液曰曰顯不益製程中重要的步驟。但是在傳統的顯示器 製程中均以玻璃材料（玻璃轉移溫度（Tg) > 700。〇為 土材對於在玻璃材料上進行銦錫氧化物導電膜（IT。） 導電層塗佈’此技術將改變傳統光學微影製程。 痛 雖然’此技術在目前可改變傳統光學微影製程，不 過此技術其最重要的製程就是在製作導電圖案時，必須 要加熱基材上之尚分子材料如壓克力材料（PMMA)、聚碳 酸脂樹脂（PC)、聚苯乙烯樹脂（PS)等，使其超過其「玻 璃轉化溫度-Tg」5G〜8G°C以上，而使高分子薄膜層軟化 才能接續下一製程之模板加壓以及圖案轉移的工作，換_ 。之右要加熱壓克力材料（PMMA )使之可以進行奈米 壓印微影製程，則必須要加熱至17〇〜2〇(rc(PMMA Tg ·· · 105〜120。〇,對於在石夕晶片（IC製程），或一些無機材料 (石英玻璃：LCD製程，主要在石英玻璃基材上製作銦錫 氧化物導電膜_-ΙΤ0導電層圖案）為基材上製作圖案時， 運用此製程在製造上並沒有問題；但是，應用於製造電 子書，電子報等輕型顯示器的發展中，此類電子產品主 要的要求就是輕、薄，以及可實曲為其重點，所以，在 製造此類（可撓性基板）顯示器所需要的基材材料就非 567401 高分子材料不可；如果要發展高分子材料為基材的可撓 性顯示器，上述技術就無法進行，因為目前市面上薄明 而且高玻璃轉化溫度（大於17(rc)之高分子產品非常稀 少，而且價格昂貴。所以需要一特殊製程來進行圖案轉 移而不使基材因為熱的原因產生型變或甚至分解，近來 也有相關技術者使用紫外光交聯型（uv curing)方式在 ^溫下進行圖形轉移，已有相當不錯的成績，稱為感光 南分子印壓製程（Step and flash)，如第i 〇圖所示。 不過，該技術因為使用照光交聯反應，所轉移的圖案會鲁 $些許收縮。並且在壓印過程中因為模板形狀限制會有 咼分子溶液不易充滿模板之情形如第丄丄圖所示。 【發明内容】 因此，本發明之主要目的在於可避免製程中直接加. 熱軟化抗蝕刻阻劑層（抗阻層—RESIST)以及塗佈導電 層高溫製程而導致可撓性基材受熱產生變形，如此，可 於製作時任意選擇基材之厚薄、種類。 鲁 為達上述之目的，本發明係一種低溫可撓性基材圖案轉 移製程，其包括有下列步驟·· 步驟一：取一具有導電圖案之模板，於該模板之導電圖 案上塗佈液態抗蝕刻阻劑層，待該液態抗蝕刻阻劑層流 平之後進行固形’而形成一抗蝕刻阻劑層（抗阻層一 RESIST)； 步驟二··於該抗蝕刻阻劑層（抗阻層-RESIST)上進行 12 567401 導電層之塗佈； 步驟三：再於上述導電層塗佈完之後，取一可撓性基材 接著至導電層上； 步驟四：待完成上述步驟一〜三之後，將該模板與抗蝕刻 阻劑層（抗阻層一RES IST)離形，使該模板之導電圖案 成形於固形後之液態抗蝕刻阻劑層（抗阻層一RESIST) 上； 步驟五：離形之後於抗蝕刻阻劑層（抗阻層一 RESIST) 上具有導電圖案之一面進行蝕刻； { 步驟六··於蝕刻完畢之後，進行剝除殘餘之抗蝕刻阻劑 層（抗阻層一 RESIST)即可使該導電薄膜層之導電圖案 形成在可撓性基材上；即可避免製程中直接加熱軟化抗 蝕刻阻劑層（抗阻層一RESIST)以及塗佈導電層高溫製 程而導致可撓性基材受熱產生變形，如此，可於製作時 任意選擇基材之厚薄、種類。567401 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a low-level process, especially-a type, which can avoid the process · middle w: sexual substrate pattern transfer layer (resistance layer-hidden T) C softens the anti-etching resist. The flexible substrate is deformed by heating. For example, 1 layer ⑤ warming process results in the thickness and type of the substrate. [Previous technology] can be arbitrarily selected during production. Press, the currently commonly used nano M dagger * M ^^ (compression, the transfer of body name engraved patterns, so the technology of ^ is applied to the semi-guided technology and- The general engraved seal is very kind * to attach great importance to, but at this moment (the photomask, the electron beam, the focus is away from the money, the traditional micro shoe last should be plated on a certain template material (通 ==: with (PMMA--Polymethyl methacrylate, a high Molecular acrylic (force material) is used as "print pad", that is, "resistance layer", coated on the component substrate material, and then using a special instrument to apply precisely controlled pressure and temperature to press the template PMMA printed on the element substrate. In this way, the pattern (positive film) on the template is transferred to the polymer acrylic material (PMMA), followed by dry etching such as plasma method (PLASMA) or isotropic ion etching. (RIE—React i ve ionic etching), the desired pattern can be obtained; and with the above-mentioned technology, the nano-imprint lithography is a new type of 10 567 401 one-shot technique to abandon traditional optical micro-lithography Shadow technology The advantages of low-field, high-capacity 'and its application range is very wide, such as can be used to make a flexible substrate display (for example: electronic newspapers can be flipped and finger-folded electronic books); or electronics and photoelectric health # (Eg, soft printed circuit board manufacturing process), so nanoimprint lithography is undoubtedly an important step in the next generation of liquid manufacturing process. However, in the traditional display manufacturing process, glass materials (glass transition temperature) are used. (Tg) > 700. For the earth material for conducting indium tin oxide conductive film (IT.) On the glass material. The conductive layer coating 'This technology will change the traditional optical lithography process. Pain though' This technology is currently available Change the traditional optical lithography process, but the most important process of this technology is that when making conductive patterns, the molecular materials on the substrate must be heated, such as acrylic materials (PMMA), polycarbonate resin (PC), polymer Styrene resin (PS), etc., to make it exceed its "glass transition temperature-Tg" by 5G ~ 8G ° C, so that the polymer film layer can be softened to continue the process of template pressing and pattern transfer in the next process. If you want to heat the acrylic material (PMMA) so that it can be used for nano-imprint lithography, you must heat it to 17 ～ 20 (rc (PMMA Tg ··· 105 ~ 120). 〇, for the Shixi wafer (IC process), or some inorganic materials (quartz glass: LCD process, mainly on the quartz glass substrate to make indium tin oxide conductive film _-ITO 0 conductive layer pattern) as a pattern on the substrate At this time, there is no problem in manufacturing using this process; however, in the development of light displays such as e-books and newsletters, the main requirements of such electronic products are lightness and thinness, and the focus on real music, so The base material required for manufacturing such (flexible substrate) displays is not 567401 polymer materials; if you want to develop flexible displays based on polymer materials, the above technologies cannot be carried out because the current market Polymer products with thin and high glass transition temperature (above 17 (rc)) are very rare and expensive. Therefore, a special process is required to perform pattern transfer without causing the substrate to deform or even decompose due to heat. Recently, related art also uses UV curing to perform pattern transfer at high temperature. There are quite good results, called Step and Flash, as shown in Figure 〇. However, this technique uses a light-crosslinking reaction to shrink the transferred pattern slightly. And in the embossing process, due to the limitation of the template shape, there may be cases where the molecular solution is not easy to fill the template, as shown in the second figure. [Summary of the Invention] Therefore, the main purpose of the present invention is to avoid direct addition during the manufacturing process. Heat softening of the anti-etching resist layer (resistive layer-RESIST) and coating the conductive layer at a high temperature process can cause deformation of the flexible substrate due to heat. In this way, the thickness and type of the substrate can be arbitrarily selected during production. To achieve the above purpose, the present invention is a low-temperature flexible substrate pattern transfer process, which includes the following steps: Step 1: Take a template with a conductive pattern, and apply a liquid-resistant coating on the conductive pattern of the template Etching the resist layer, after the liquid resist resist layer is leveled, solidification is performed to form an resist resist layer (resistive layer RESIST); Step 2 ... on the resist resist layer (resistive layer) -RESIST) on 12 567401 conductive layer; Step 3: After the above conductive layer is coated, take a flexible substrate and attach it to the conductive layer; Step 4: After completing the above steps 1-3 , Release the template from the etch resist layer (resistance layer RES IST), and form the conductive pattern of the template on the solid liquid etch resist layer (resistance layer RESIST); step five: Etching is performed on one side of the conductive pattern on the anti-resistive resist layer (resistive layer-resist) after being removed; {Step 6 · After the etching is completed, the remaining anti-resistive resist layer (anti-resistive layer 1) is removed. RESIST) to make the conductive thin The conductive pattern of the film layer is formed on the flexible substrate; it can avoid the direct heating and softening of the anti-etching resist layer (resistance layer-RESIST) during the manufacturing process and the high-temperature process of coating the conductive layer, which can cause the flexible substrate to be heated. In this way, the thickness and type of the substrate can be arbitrarily selected during production.
I 【實施方式】 請參閱『第1〜9圖』所示，係本發明之步驟一示意 圖、本發明之步驟二示意圖、本發明之步驟三示意圖、 本發明步驟四之示意圖、本發明之步驟五示意圖、本發 明之步驟六示意圖、本發明成形後之電子顯微鏡SEM圖。 如圖所示：本發明係一種低溫可撓性基材圖案轉移製 程，其係利用液態抗蝕刻阻劑層2塗佈於有導電圖案1 1之模板1上，待液態抗蝕刻阻劑層2固化後進行導電 13 567401 層3之塗佈’再以塗佈或黏著方式將所需之可撓性基材 4附著而成層狀結構，並在與模板i離形之後施以蝕刻 及剝除抗蝕刻阻劑層2a,達成導電圖案3 1轉移至可撓 性基材4之目的；如此，即可避免製程中直接加熱軟化 抗蝕刻阻劑層（抗阻層一RESIST)以及塗佈導電層高溫 製程而導致可徺性基材受熱產生變形，如此，可於製作 時任意選擇基材之厚薄、種類。 而本發明之低溫可撓性基材圖案轉移製程，其係包 括有下列步驟： φ 步驟一 ··取一具有導電圖案丄1之模板1，於該模 板1之導電圖案11上以旋塗之方式塗佈有液態抗蝕刻 阻劑層2，該液態抗蝕刻阻劑層2 (抗阻層—RESIST) 於使用刖須先攪拌靜置檢查是否有沉殿，若有沉澱則視 情形加長攪拌時間至該液態抗蝕刻阻劑層2 (抗阻層一· RESIST)溶液完全澄清為止，而該液態抗蝕刻阻劑層2 . 〔抗阻層一 rESIST)係可為熱交聯型（Therm〇set t叩e)， 兔外光交聯型（UV curing)，或溶於適當溶劑之可塑性籲 材料如聚對苯二甲酸乙二酯月旨（PET)、壓克力樹脂（聚 $基丙烯酸甲脂--PMMA)等，待該液態抗蝕刻阻劑層2 机平之後進行固形，而形成一抗蝕刻阻劑層(抗阻層 -RESIST )(如第1圖所示）； 步驟一.於該抗蝕刻阻劑層2 a (抗阻層一RESIST) 上進行導電層3之塗佈（如第2圖所示）； 步驟三··再於上述導電層塗3佈完之後，取一可撓 14 567401 3材4接著至導電層3上，而該可撓性基材4係可以 塗佈或接著方式接著至導電層3上（如第3圖所示）； 〆驟四·待元成上述步驟一〜三之後，將該模板工與 抗姓刻阻劑層2 a (抗阻層—RESIST)離形，使該模板工 之導電圖案1 1成形於固形後之液態抗㈣阻劑層2 (抗阻層一RESIST)上（如第4圖所示）； 步驟五·離形之後於抗姓刻阻劑層2 a (抗阻層-RESIST)上具有導電圖案2工a之一面進行姓刻，而該蝕 刻之方式可為乾式蝕刻如等向性離子蝕刻（Rie),或濕❿ 式姓刻（如第5圖所示）； 步驟六··於钱刻完畢之後，進行剝除殘餘之抗餘刻 阻劑層2 a (抗阻層-RESIST)即可使該導電薄膜層3之 導，圖案3 1形成在可撓性基材4上（如第6圖所示）； 如疋’藉由上述之步驟達到—全新之低溫可撓性基材圖 案轉移製程。 s運用本發明之低溫可撓性基材圖案轉移製程時， 該=態抗蝕刻阻劑層2係以壓克力樹脂（聚曱基丙烯酸1 甲月曰 PMMA ) / 氣苯（ch〇l〇r〇benzene ) 1 4 % 溶液以 為例，當步驟六之導電圖案3 i轉移在可撓性基材4上 之後，該可撓性基材4上之導電圖案3 i由掃描式電子 顯微鏡SEM所得如第7、8圖所示，而由該撓性基材4 上的導電圖案3 1表面可知，轉移圖形非常完整，而側 壁角度也與模板1上的角度互補；且由第9圖觀之，該 導電圖案3 1之凹陷部分約$ 2 // m，同樣在相對應右邊 15I [Embodiment] Please refer to "Figures 1 to 9", which are a schematic diagram of step one of the present invention, a schematic diagram of step two of the present invention, a schematic diagram of step three of the present invention, a schematic diagram of step four of the present invention, and a step of the present invention. Five schematic diagrams, step six of the present invention, and electron microscope SEM images after forming according to the present invention. As shown in the figure, the present invention is a low-temperature flexible substrate pattern transfer process, which uses a liquid anti-etching resist layer 2 to be coated on a template 1 having a conductive pattern 11 and a liquid anti-etching resist layer 2 After curing, the conductive 13 567401 layer 3 is coated, and then the required flexible substrate 4 is adhered to form a layered structure by coating or adhesion. After being separated from the template i, it is etched and stripped. The anti-etching resist layer 2a achieves the purpose of transferring the conductive pattern 31 to the flexible substrate 4. In this way, it can avoid directly heating and softening the anti-etching resist layer (resistance layer-RESIST) and coating the conductive layer during the manufacturing process. The high-temperature process causes the flexible substrate to be deformed by heating. In this way, the thickness and type of the substrate can be arbitrarily selected during production. The low-temperature flexible substrate pattern transfer process of the present invention includes the following steps: φ Step 1 · Take a template 1 with a conductive pattern 丄 1, and spin-coat the conductive pattern 11 on the template 1 The method is coated with a liquid anti-etching resist layer 2. The liquid anti-resisting resist layer 2 (resistive layer—RESIST) must be stirred and left standing before use to check whether there is a sink. If there is precipitation, increase the stirring time as appropriate. Until the liquid etch resist layer 2 (resistance layer 1 RESIST) solution is completely clarified, and the liquid etch resist layer 2 (resistance layer 1 rESIST) can be a thermal cross-linking type (Thermset) t 叩 e), rabbit external light cross-linking type (UV curing), or plastic materials such as polyethylene terephthalate (PET), acrylic resin Grease-PMMA), etc., after the liquid anti-etching resist layer 2 is leveled, solidification is performed to form an anti-etching resist layer (resistive layer-RESIST) (as shown in FIG. 1); step one. Coating the conductive layer 3 on the anti-etching resist layer 2 a (resistive layer-RESIST) (as shown in FIG. 2); step ·· After coating the conductive layer 3 above, take a flexible 14 567401 3 material 4 and attach it to the conductive layer 3, and the flexible substrate 4 can be coated or adhered to the conductive layer 3 (As shown in Figure 3); Step 4 · After Yuancheng becomes the above steps 1 ~ 3, release the template worker from the anti-resistive resist layer 2a (resistance layer—RESIST) to make the template worker The conductive pattern 1 1 is formed on the solid anti-resistance agent layer 2 (resistance layer 1 RESIST) (as shown in FIG. 4) after the solid state; Step 5: After the release, the anti-resistance agent layer 2 a ( The resist layer (RESIST) has a conductive pattern on one side of the conductive pattern, and the etching method can be dry etching such as isotropic ion etching (Rie), or wet etching (as shown in Figure 5). (Shown); Step 6: After the money is engraved, the remaining anti-resistive resist layer 2 a (resistance layer-RESIST) can be stripped to make the conductive thin film layer 3 conductive, and the pattern 31 can be formed on the substrate. Flexible substrate 4 (as shown in Figure 6); such as 疋 'through the above steps-a new low-temperature flexible substrate pattern transfer process. When using the low-temperature flexible substrate pattern transfer process of the present invention, the = state anti-etching resist layer 2 is made of acrylic resin (polyacryl acrylic acid PMMA, PMMA) / air benzene (ch〇l〇 r〇benzene) 1 4% solution is taken as an example. After the conductive pattern 3 i of step 6 is transferred on the flexible substrate 4, the conductive pattern 3 i on the flexible substrate 4 is obtained by a scanning electron microscope SEM. As shown in Figs. 7 and 8, from the surface of the conductive pattern 31 on the flexible substrate 4, it can be seen that the transfer pattern is very complete, and the angle of the side wall is complementary to the angle on the template 1. The recessed part of the conductive pattern 31 is about $ 2 // m, which is also at the corresponding right 15
線路凸起部分同樣約為2//m，所以此技術在轉移圖案能 力之评估可達到解析度2e m以下，另本發明可進一步利 用奈米尺寸之模具，藉此得到奈米級之圖案；因此，以 此技術可避免傳統壓印（H〇T EMB〇SSING STEp aND FLASH)中模板型態不同而有抗蝕刻阻劑層2無法完全填 滿導電圖案凹陷部份的情形。 惟以上所述者，僅為本發明之較佳實施例而已，當 不能=此限定本發明實施之範圍；故，凡依本發明申請 專利範圍及發明朗書内容所作之簡單的等效變化與修馨 飾’皆應仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 第1圖係本發明之步驟一示意圖。 第2圖係本發明之步驟二示意圖。 第3圖係本發明之步驟三示意圖。 第4圖係、本發明步驟四之示意圖。The raised portion of the line is also about 2 // m, so the evaluation of the pattern transfer ability of this technology can reach a resolution of less than 2e m. In addition, the present invention can further use a nano-sized mold to obtain a nano-level pattern; Therefore, this technology can avoid the situation where the template type is different in traditional stamping (HOT EMBOSSING STEP FLAD) and the etching resist layer 2 cannot completely fill the recessed portion of the conductive pattern. However, the above are only the preferred embodiments of the present invention. When this cannot be used to limit the scope of implementation of the present invention; therefore, any simple equivalent changes made according to the scope of patent application and the content of the invention book of the invention and "Xiu Xin ornaments" should still fall within the scope of the invention patent. [Brief description of the drawings] Fig. 1 is a schematic diagram of step one of the present invention. Figure 2 is a schematic diagram of step two of the present invention. Figure 3 is a schematic diagram of step three of the present invention. FIG. 4 is a schematic diagram of step 4 of the present invention.
第5圖係、本發明之步驟五示意圖。 =6圖係、本發明之步驟六示意圖。 第7、8、9圖係太议 第10、11圖’二 形後之電子顯微鏡圖 係^用製成之示意圖。 【元件標號對照】 模板1 導電圖案1 1 567401 液態抗蝕刻阻劑層2 抗蝕刻阻劑層2 a 導電圖案2 1 a 導電層3 導電圖案3 1 可撓性基材4Fig. 5 is a schematic diagram of step 5 of the present invention. = 6 is a schematic diagram of step 6 of the present invention. Figures 7, 8, and 9 are too controversial Figures 10 and 11 'after the two-dimensional electron microscope images are schematic diagrams made using the ^. [Comparison of component numbers] Template 1 Conductive pattern 1 1 567401 Liquid anti-etching resist layer 2 Anti-etching resist layer 2 a Conductive pattern 2 1 a Conductive layer 3 Conductive pattern 3 1 Flexible substrate 4