TW594459B - Chemical mechanical polishing advanced process control system of multi-recipes operation - Google Patents

Abstract

A chemical mechanical polishing (CMP) advanced process control (APC) system of multi-recipes operation is disclosed. The present invention comprises: an APC server electrically connected to a CMP tool, wherein the APC server is used to split a first recipe file of a lot in a front opening unified pod (FOUP) into a plurality of different second recipe files; and an APC graphic user interface (GUI) used to present an information of a plurality of wafers in the lot and each corresponding second recipe file of each wafer in the APC server.

Description

594459 V. Description of the invention (l) '[Technical field to which the invention belongs] The present invention relates to a chemical mechanical polishing (CMP) advanced process control (APC) system, and in particular, it relates to An advanced chemical mechanical grinding process control system operated by multiple recipes. [Previous technology] In various processes of the wafer fab, chemical mechanical polishing can be used to remove the material on the wafer surface to make the wafer surface more flat, and its mechanical grinding with abrasive substances and acid test solution The two functions of chemical polishing can make the surface of the wafer comprehensively flattened to facilitate subsequent film deposition. Φ In the hardware equipment of the chemical mechanical polishing process, the polishing head is used to press the wafer against the polishing pad and rotate the wafer, and the polishing pad rotates in the opposite direction. During polishing, a slurry of abrasive particles is placed between the wafer and the polishing pad. As for the variables that affect the chemical mechanical polishing process: the pressure applied by the polishing head and the flatness of the wafer, the rotation speed of the wafer and polishing pad, the chemical composition of the slurry and polishing particles, the temperature, and the material and Wearability and so on. In addition to the hardware equipment of the chemical mechanical polishing machine mentioned above, the chemical mechanical polishing machine can also have an advanced process control system for performing various control tasks of the chemical mechanical polishing process. However, this advanced process control system is based on a single shipment and cannot support the monitoring of any wafer slot (slot) position. In addition, the monitoring downtime of this advanced process control system based on a single shipment is greater than 30%. Moreover, this advanced process control system based on a single shipment cannot support a single crystal box (Fr0nt,

594459 V. Description of the invention (2),

Opening Unified Pod; FOUP). In addition, this advanced process control system based on a single batch cannot be used to correct the different film thicknesses caused by the previous chemical vapor deposition (CVD) process. [Summary of the Invention] Therefore, an object of the present invention is to provide an advanced chemical-mechanical grinding process control system for multi-formulation operation, which can provide multiple batch operations. Another object of the present invention is to provide an advanced chemical mechanical grinding process control system for multi-formulation operation, thereby providing multi-formulation operation. It is yet another object of the present invention to provide a multi-formula operation chemical mechanical research + grinding advanced process control system, which can support any wafer slot position monitoring operation. Another object of the present invention is to provide an advanced chemical mechanical grinding process control system for multi-formulation operation, which can monitor the downtime from more than 30% to as low as 6%. Another objective of the present invention is to provide a The multi-formulation operation of the chemical mechanical polishing advanced process control M can avoid the movement of wafers in the human body sorting crystal box.发明 Invention 2 and Γ: Guangyi is providing a multi-prepared chemical mechanical polishing advanced process control system, which can be used to stop a ^ ^ ^ ^ FI AA ^ ^ J Use U to modify the previous chemical vapor deposition process institute Resulting in different film thicknesses. According to the above object of the present invention, thumb mountain _. Χ

Al J proposed an advanced chemical-mechanical grinding process control system with multiple formulas. Shizheng ^ In a preferred embodiment of the present invention, the chemical-mechanical research hemp of this multi-formulation operation, & the ship _ _ 1 main target 1 JT this evening advanced grinding process control system is applicable to a Chemistry 594459 5. Description of the invention (3) Machine, grinding machine, wherein the system includes at least: an advanced process control server 'electrically connected to the chemical mechanical grinding machine, wherein this advanced process control feeder is used Dividing one first recipe file of one batch (Lot) in one crystal box (Fr0nt 〇pening unified p0d; F〇UP) into different plural first formula files; and A graphical user interface (GUI) for advanced process control is used to present a plurality of wafers batched in the advanced process control server and each first recipe file corresponding to each wafer Information. In addition, the above-mentioned advanced process control server and the advanced process control user graphic interface further include an advanced process control system database ', and the advanced process control system database further includes an advanced process control storage program. Besides, do it again. Additionally In addition, 'application of the present invention may thereby provide for multiple batch operations. The invention can be applied to provide multi-formulation operation. Application of the present invention can support the operation of monitoring the position of any wafer slot. Application of the present invention can reduce the monitoring downtime from more than 30% to 6%. Application of the present invention can eliminate the need to manually sort the wafers in the crystal box. . Furthermore, the application of the present invention can modify different film thicknesses made by previous chemical vapor deposition processes. [Embodiment] The present invention relates to an advanced chemical mechanical grinding control system for multi-formulation operation. The multiple recipe capabilities of the chemical mechanical polishing advanced process control system of the present invention can provide process monitoring of any wafer slot position. And the invention

594459 V. Description of the invention (4) The basic idea is to first establish a new machine recipe before the product batch is processed. The machine recipe is logically equivalent to each recipe in each wafer slot. This concept forms the advanced chemical mechanical polishing process control system based on a single wafer of the present invention. In order for the chemical mechanical polishing advanced process control system of the present invention to achieve the purpose based on a single wafer, the present invention needs to have the following important functions. First, the Semiconductor Equipment Communication Standard (SECS) software of the machine must support the modification of the formulation subject during the process. Secondly, the collection of data must be connected to the System Variable ID (SVID) and the Event Report ID. Furthermore, the measurement port must be built in the machine. In addition, the machine software must be able to use its internal control logic to perform feed back / feed forward. The following uses a Reflex ion 3 00 chemical mechanical polishing machine from Applied Materials as an example to illustrate the features of the machine to which the present invention is applicable ^;,: The invention is not limited to the application of a material company R ef 1 e X i ο η 3 0 0 Chemical mechanical polishing machine. The present invention is applicable to any other type of chemical mechanical polishing machine having the characteristics described below. = Reflexion 30 0 Chemical Mechanical Grinding Machine of Applied Materials Company adopts a rotary structure with three grinding tables and four grinding heads, of which three: when the grinding head is in the grinding process, the fourth grinding head is responsible for crystal The round cake is called = this = the equipment is in the process of wafer transfer 'This equipment is still sustainable two: ^ process. When the wafer is polished in the Reflexi 00 3 Chemical Mechanical Grinder D, it is sequentially located on the first polishing table, the second

Page 9 594459 V. Description of the invention (5) On the grinding table and the third grinding table, the first grinding table and the second grinding table are used for rough grinding, and the third grinding table is used for rough grinding. Fine grinding (Buf fing). Before the batch starts the process, the host will use the recipe file to store the control work for each wafer. Please refer to Figure 1 for the Ref lex an 300 chemical mechanical polishing machine with the advanced process control system of the present invention, the front thickness measurement and the rear thickness measurement :, the relationship diagram. As shown in Figure 1, before performing chemical mechanical polishing on the wafer 〇, a thickness measuring machine (such as the OP5430 thickness measuring machine of the company Thermal Wave eternal Wave) needs to be measured as shown in step 20). A thickness measurement before U is obtained to obtain the thickness data before wafer polishing. Then, the wafer 10 is moved by a 'H dagger mechanical polishing machine 30 to perform a chemical mechanical polishing process. After the wafer m η ^ mechanical polishing machine 30 completes the chemical mechanical polishing process, the crystal # enters the thickness measuring machine to perform the post-thickness measurement as shown in step 40 to obtain the wafer 100 after grinding. Thickness information. In addition, the previous thickness measurement data obtained in the above steps can be transmitted to the advanced process control server through the machine application / machine control :: system 50. Similarly, the back thickness measurement data in the above steps 22 and 22 can be transmitted to the advanced process control server through the machine application / machine control. Then, as described in step 70, the user ’s process control server may use the obtained thickness measurement data, · ''],> material, and polishing time to calculate the polishing rate (Reinoval a ′) and other parameters. And transfer it to the chemical mechanical polishing machine 30, and use the> 7 two grinding rate and other parameters as the formula parameters for the next grinding. Its T ^ • 匕 匕 Xiji Fang will go to 1 within two-father number can be used to change the grinding head Pressure and grinding rate, and control of 4 daggers of liquid, table, and effort. As for coarse grinding rate, fine grinding rate, and average

Page 10 594459

Uniformity can be calculated according to equation (1), equation (equation (3), and): Rough grinding rate = (pre-measured thickness-post-measured thickness) / (first grinding table grinding time + first Grinding time of two grinding tables) (丨), Fine grinding rate = (pre-measured thickness-post-measured thickness) / (third grinding 4 grinding time) (2), ° ^ Uniformity = (maximum thickness ~ Minimum thickness) x 6〇 / (average thickness) (3), where the number 60 in equation (3) is used to convert the time base for calculating uniformity from seconds. When the advanced process control system of the present invention is provided When the iReflexi〇n 300 chemical machine 4 mechanical grinding machine detects that a batch of goods is about to undergo the chemical mechanical polishing process, the robotic arm will remove the wafer from the crystal box to the loading port (L0afi port). Then the self-advanced process control system server requests a batch formula, and this batch formula can be controlled by the semiconductor equipment communication standard (Seffliconductor).

Equipment Communication Standard; SECS) S2F41 remote command is modified in the advanced process control system server. Please refer to the system architecture diagram of the chemical mechanical polishing advanced process control system and other components of the present invention as shown in FIG. 2. As shown in FIG. 2, the advanced process control server 80 does not directly communicate with the material management server 150 of the manufacturing execution system (Manufactory Executing System; MES). Using the advanced chemical mechanical polishing process control system based on a single wafer in the present invention can make the chemical mechanical polishing process control more flexible, and the system behavior can be set and changed by the user without restarting the process. In the present invention, all control logic exists in advanced process control

Page 11 594459 V. Description of the invention (7) Servo 80. The codes in the machine control system 90 and the machine application program 100 need not be changed due to different settings. One end of the machine control system 90 is electrically connected to the advanced process control server 8o. The other end of the machine control system 90 is electrically connected to one of the machine application programs 100. In addition, the machine control system 90 communicates with the machine application 丨 00 in an Extensible Markup Language (XML), so that the machine control system 90 can transfer recipe parameters, control specifications, and wafers. The recipe value and the wafer selection flag (Flag) to the machine application 100. Furthermore, the other end of the machine application 100 is electrically connected to the chemical mechanical polishing machine 30. In addition, the user can obtain the various information in the advanced process control server 800 by reading the advanced process control user graphical interface 1 丨 0, and the chemical mechanical polishing advanced process control database 12 and the database servo The device 14 is located between the advanced process control server 80 and the advanced process control user graphical interface 丨 J ′ to assist in achieving various functions in the invention. Among them, the chemical mechanical polishing advanced process control database 1 2 0 has a chemical mechanical polishing advanced process control storage program 130. In addition, the second figure also includes an alarm system 丨 60, which is connected to the advanced process control server 80, which can notify the user to perform an appropriate operation when the function of the advanced process control temple server 80 is abnormal. deal with. When the delta file is transferred to the chemical mechanical grinding machine 3, the advanced process control server 80 will request the machine application program 1 through the machine control system 9 to obtain each of them from the chemical mechanical grinding machine 30. The main body of the original recipe file is empty. Then the machine application 100 will follow the instructions of the advanced process control server 80 to create a new recipe file. The new recipe file includes the original recipe file. Information, and each wafer slot information in the new recipe file and each batch

Page 12 594459

The wafer slot information in the original recipe file is logically the same. Therefore, the advanced process control system for chemical mechanical grinding of the multi-formulation operation of the present invention is characterized in that a new formula file can be created by the advanced process control server to change the corresponding formula of Ba circle, and the grinding rate is provided to the chemical mechanical grinding machine station. For example, a crystal box can include lot eight and lot B, and the formula for this lot is A.cas and B.cas, of which the first wafer to the fifth wafer belong to the batch. a, and the 6th to 25th wafers belong to lot B. By using the advanced process control server of the present invention, a new formula tank C · cas can be established, where c · cas includes the formula body of the first wafer to the 25th wafer. That is, before the calculation by the advanced process control server, the batch A of | _ the first wafer from the fifth to the fifth wafer jointly owns the recipe file A.cas, and the sixth wafer of the batch β Up to the 25th wafer, they share the recipe file B · cas. When the advanced process control feeder establishes the recipe file C · cas, the recipe information of each wafer is first copied into an empty recipe file Ce cas, and then the first wafer to the second 5 wafers are copied. Fill in the recipe information in c · cas. Therefore, advanced process control can combine several recipe files into a new recipe file. The following code can be used to illustrate the multi-formulation operation of multiple consignments in the present invention. 05/19/02 05:39:10 I NMOPA3-2 NFB000238 AskStartProcess, Lot: Νχ0156517 · 00, Recipe Parameter: RR-HI = 3333 05/19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: NXO 1 5651 7 · 00, Recipe

Parameter: RR-H2 = 3333 05/19/02 05:39:11 I NM0PA3-2 NFB000238

Page 13 594459 V. Description of the invention (9)

AskStartProcess, Lot: NX01 5651 7 · 00, Recipe Parameter: RR-H3 = 3333 05/19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: NX0156517.00y Recipe Parameter: RR-H4 = 3333 05 / 19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: NX0156521 · 00, Recipe: M—IMD—H4 NM0PA3-2 NFB0 0 0238 The machine is required to execute the program, and the batch is: NX0 1 5652 1.0 0, program Number: M_IMDJ4 05/19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: NX0156520 · 00, Recipe: M—IMD—H3 NM0PA3-2 NFB000238 requires the machine to execute the program, the batch of goods: NX0 1 5 652 0.0 0, program number: M—IMD —H3 05/19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: NX0156519. 00, Recipe: M__IMD_H2 NM0PA3-2 NFB00 0238 requires the machine to execute the program and approve the goods : NX0 1 565 1 9.0 0, program number: M_IMD_H2 05/19/02 05:39:11 I NM0PA3-2 NFB000238 AskStartProcess, Lot: Νχ0156518.00, Recipe: IMD_H1 05/19/02 05:39:10 I NM0PA3 -2 NFB000238 AskStartProcess, Lot: NX0156517 · 00, Recipe: M—IMD—H5 NM0PA3 [LotID] NX0156517.00 [SlotID] M—IMD H5.CAS [CassFile] 16 [Pol Recipe] wc_plp2.pol wc_plp2.pol sbf_25s.pol [Con Recipe] con36. Con con36. Con (none

Page 14 594459 V. Description of the invention (10) NMOPA3 [LotID] NX0156517.00 [SlotID] M ^ IMD_H5.CAS [CassF ile] 16 [Pol Recipe] wc__plp2.pol wc —plp2.pol sbf_25s.pol [Con Recipe] con36. con con36. con (none) NM0PA3 [LotID] NX0156518.00 [SlotID] M ^ IMD_H1.CAS [CassFile] 17 [Pol Recipe] imd33.pol imd33.pol DI-buff. po1 [Con Recipe] con48. con48 con48.con (none) NM0PA3 [LotID] NX0156518.00 [SlotID] M—IMD—H1.CAS [CassFile] 17 [Pol Recipe] imd33.pol imd33.pol DI-buff. po 1 [Con Recipe] con48. con48 con48.con (none) NM0PA3 [LotID] NX0156519 · 00 [SlotID] M—IMD—H2 · CAS ^ [CassFile] 18 [Pol Recipe] imd33.pol imd33.pol Dl-buff.pol [Con Recipe] con48. con48.con con48.con (none) NM0PA3 [LotID] NX0156519.00 [SlotID] M—IMD—H2.CAS [CassFile] 18 [Pol Recipe] imd33.pol imd33.pol DI-buf f.pol [Con Recipe] con48 · con con48 · con (none) NM0PA3 [LotID] NX0156520.00 [SlotID] M.IMD ^ H3.CAS [CassFile] 19 [Pol Recipe] imd33.pol imd33, pol DI-buf f.pol [Con Recipe] con48. con48 con48.con (none) NM0PA3 [LotID] NX0156520. 00 [SlotID] M—IMD—H3.CAS [CassFile] 19 [Pol Recipe] imd33.pol imd33.pol DI-buff.pol [Con Recipe] con48. Con con48.con (none) NM0PA3 [LotID] NX0156521.00 [SlotID] M-IMD-H4.CAS [CassFile] 20 [Pol Recipe] imd33.pol imd33.pol DI -buf f.po1 [Con Recipe] con48. Con con48.con (none)

Page 15 of 594459 5. Description of the invention (11) · NM0PA3 [LotID] NX0156521.00 [SlotID] M_IMD ^ H4.CAS [CassFile] 20 [Pol Recipe] imd33.pol imd33.pol DI-buff.pol [Con Recipe] con48.con con48.con (none) NMOPA3-2 NFB000238 Sent TSMC—TxAPCWBCMP-RRQueryReq to APC server success, message: 0 000 000 1: Normal end. The following code can be used to illustrate the multiple recipes of a single batch in the present invention operating. Among them, X55V8 (Kcas represents the original formula file of a certain batch of goods. Using the advanced process control system of the present invention, X55V80 · cas can be divided into two different formula files X55V87 · cas and X55V89.cas. Therefore, these two A different formula file, X55V87.cas and X55V89 · cas, can be used to provide two different grinding endpoints for a certain batch of goods to correct the different film thicknesses caused by the previous chemical vapor deposition process.

Manager ": ： WBCMP—CheckCVDRecipe] m—waferStr =: N92 1 67.0 6 < P_CheckCVDRecipe] CVD fine tune recipe va 1 ue: 87 <

Manager—i :: WBCMP_CheckCVDRecipe] SiView Original recipe: X55V80.cas <

Manager—i :: WBCMP-CheckCVDRecipe] CVD fine tune Λ recipe value: 87 <

Manager_i :: WBCMP_CheckCVDRecipe] CVD fine tune recipe: X55V87.cas <

Manager_i :: WBCMP_CheckCVDRecipe] waferlD, CVD fine tuned recipe value: N92167.23: X55V87.cas <

Page 16 594459 V. Description of the invention (12)

Manager—i :: WBCMP_CheckCVDRecipe] SiView Original recipe: X55V80.cas <

Manager—i :: WBCMP—CheckCVDRecipe] CVD fine tune recipe value: 89 <

Manager—i :: WBCMP-CheckCVDRecipe] CVD fine tune recipe: X55V89.cas < [CMPManager-i :: WBCMP-CheckCVDRecipe] waferlD, CVD fine tuned recipe value: N92167.02: X55V89.cas Please refer to the margin in Figure 3 The graphical user interface of the CMP advanced process control system of the present invention is shown. The user graphic interface of this FIG. 3 < mainly shows the state of the chemical mechanical polishing process, and the dialog box item 200 is a feature of the user graphic interface in the present invention. The dialog box item 2 has the lot number (Lot ID) and the corresponding wafer number (WAFERID), recipe number (RECIPEID), and update date (UPDATETIME) of all wafers in a lot number. The data in the dialog box item 2000 in Figure 3 indicates that a lot with a lot ID of N00459.00 has WAFERI]) are several wafers such as N00459 · 01, N00459 · 02, N00459 · 03, and so on. . By applying the advanced multi-formulation chemical mechanical grinding process control system of the present invention, N55V69.cas, N55V70.cas and other at least two different formula files can be included in the batch of N00459.00. That is, wafers such as N00459.01, N0045LQ3, N0 04 5 9 · 05, ... can have a recipe center 5 ¥ 69 · cas, while wafers such as N00459. 02, N00459 · 04, N0 0459 · 06, ... Can have formula file N55V70. Cas. 8. Therefore, according to the above preferred embodiments of the present invention,

Page 17 594459 V. Description of the invention (13) 1 The chemical mechanical polishing advanced process control system includes at least one advanced process f system server, which is electrically connected to the chemical mechanical polishing machine, which: step, process control The server is used to divide a first formula tank of a batch of goods in a crystal box into a plurality of different second formula files; and a advance = :: graphic interface is used to present advanced process control servos : Medium: One of each wafer corresponding to a number of wafers and each second recipe file f In addition, the above-mentioned advanced process control server and advanced process "system makes the push interface more inclusive. An advanced process control system database, and there is an advanced process control stored procedure in the ^ & 1 process control system database. It can be seen from the preferred embodiments of the present invention that the present invention can be used to provide multiple applications. The present invention can be applied, the present invention can be applied, the monitor can be applied, the present invention can be applied, and in addition, it can be known from the above-mentioned preferred embodiments of the present invention to provide multiple recipe operations. Furthermore, it can be known from the above-mentioned preferred embodiments of the present invention that the operation of supporting arbitrary wafer slot position monitoring is supported. In addition, from the above-mentioned preferred embodiments of the present invention, it can be known that the measurement downtime is reduced from more than 30% to 6%. In addition, from the above-mentioned preferred embodiments of the present invention, it can be known that the operation of omitting the wafers in the crystal box by manual sorting can be known. Furthermore, from the above-mentioned preferred embodiments of the present invention, it can be seen that the 1 caused by the vapor deposition process; The disclosure is as above, however, it is not intended to limit χ Ren He to those skilled in this art, without departing from the spirit and

Page 18 594459

Page 19 594459 Brief Description of Drawings Figure 1 shows the advanced process control system with the present invention. 300 chemical mechanical polishing machine and front thickness measurement and de riexioon diagram. "The drought measurement system and its second figure are diagrams showing the system architecture of the chemical-mechanical polishing of the present invention. The third figure of the clothing control system shows the chemical-mechanical polishing of the present invention. User graphic interface. 1-pass control system [Simple description of component representative symbols] 10 · Wafer 20: Front thickness measurement 30: Chemical mechanical polishing machine 40: Back thickness measurement 50: Machine application / machine control System 60: Machine application / machine control system 70: Advanced process control server to calculate grinding 8 0: Advanced process control server 1 w 90: Machine control system 100 110 120 130 140 150 160 Machine application Program Advanced Process Control User Graphic Interface Chemical Mechanical Polishing Advanced Process Control Data Kang Chemical Mechanical Polishing Advanced Process Control Storage Database Server Sequential Material Management Server Alarm System

594459 Schematic description 2 0 0: dialog item

B Page 21

Claims (1)

594459 6. Scope of patent application: 1. A chemical mechanical polishing (CMP) advanced process control (APC) system with multiple recipes (Recipe) operation, applicable to a chemical mechanical polishing machine, of which The system includes at least: an advanced process control server electrically connected to the chemical mechanical polishing machine, wherein the advanced process control server is used to insert a crystal box (Front Opening Unified Pod; F0UP) One lot of lot (Lot) is divided into a plurality of second formula files, and an advanced process control graphical user interface (GUI) is used to present the advanced process. Controlling one of the plurality of wafers of the batch in the server and each of the second recipe files corresponding to each of the wafers. 2. The advanced process control system for chemical-mechanical grinding with multiple recipe operations as described in item 丨 of the patent application scope, wherein the advanced process control server and the chemical-mechanical grinding machine further include a machine control system (1 [〇〇1 c〇ntr〇1 System; TCS) and a machine application (T〇〇1 AppUcation Program (TAP)), and the advanced process control server, the machine control system, The machine application is electrically connected to the chemical mechanical grinding machine in sequence. 3. As stated in item 2 of the stated patent scope, the multi-formulation operation chemical mechanical grinding advanced process control system 'in the lambda's machine control system and the machine's application program uses an extended markup language (ExtensiMe 肫 汁 叩 Unguage ; Page 22 594459 VI. Patent application scope X M L) for communication. 4. The advanced multi-formulation chemical mechanical polishing process control system as described in item 2 of the scope of patent application, wherein the machine application program and the chemical mechanical polishing machine are based on semiconductor equipment communication standards (Semi con due tor Equipment Communication Standard (SECS) for communication. 05. The multi-recipe chemical-mechanical grinding advanced process control system described in the first patent application scope, wherein the advanced process control server and the advanced process control user The graphic interface further includes an advanced process control system j database, and the advanced process control system database further includes an advanced process control storage program. 6. Advanced chemical process control system for chemical-mechanical mills as described in item 1 of the scope of the patent application, in which the ㈣-recipe standard system is a Manufactory Executing System (mess). An advanced chemical mechanical polishing process control for multiple recipe operations is used in a chemical mechanical polishing machine, where the system includes at least:-an advanced process control server for dividing a formula file in a crystal box into phases Different multiple second recipe files; :: Taiwan control system, system, the first-order process control server of the machine control system; logic to 4 into a ^ machine application, the machine △ virtual ^ 忑 machine σ One end of the application program is electrically connected to the machine 594459 6. The other end of the patent application scope control system, and the other end of the application program is electrically connected to the 5H chemical mechanical polishing machine; and an advanced process control The user-shaped interface is used to present one of the plurality of wafers of the batch in the advanced process control server and each of the second recipe files corresponding to each of the wafers. 8 · Advanced multi-formulation chemical mechanical grinding process control system as described in item 7 of the scope of patent application, wherein the machine control system and the machine application communicate with each other in extended markup language. 9. Advanced chemical-mechanical grinding process control system as described in item 7 of the scope of patent application, wherein the machine application program and the chemical-mechanical grinding machine communicate with each other using semiconductor equipment communication standards. 10. The advanced process control system for chemical mechanical polishing of multiple recipe operations as described in item 7 of the scope of patent application, wherein the advanced process control server and the advanced process control user graphics include an advanced plane. The process control system database, and the advanced process control system database further has an advanced process control storage program. 11. The advanced process control system for chemical-mechanical grinding of multi-formulation operation as described in item 7 of the scope of patent application, wherein the first formula file is generated from a manufacturing execution system. Page 24 594459 VI. Application Phase ϋ " ^ * '1—Sai 12 · —Chain Xi ^ Li Xi Advanced Chemical Mechanical Grinding Process Control System for Formula Operation, ^ it ΐ = Chemical Mechanical Grinding Machine, where the The system includes at least: a _ τ private control server, which is used to divide one of a batch of goods in the box into a second = square building into a plurality of different second recipe files, wherein the first recipe file Department of production; i & one-man-made manufacturing execution system; σ control system, one end of the machine control system is electrically connected to the machine: system: control server; and: machine application program, the machine applies mobile One end is electrically connected to the machine control system, the other end is first, and the other end of the machine application is electrically connected to the chemical mechanical polishing machine. 〇 13. According to the multi-formulation operation of the chemical-mechanical grinding advanced process control system as described in the scope of the patent application No. 丨 2, wherein the machine control system and the machine application program communicate in an extended markup language. 14. The advanced multi-formulation chemical-mechanical grinding process control system as described in item No. 丨 2 of the scope of patent application, wherein the machine application program communicates with the chemical-mechanical grinding machine using the semiconductor equipment communication standard. 15. Advanced chemical process control system for multi-formula operation as described in item 12 of the patent application scope, which further includes an advanced process control user graphical interface for presenting the advanced process control server. Information about one of the plurality of wafers of the batch and each of the second recipe files corresponding to each of the wafers. 594459 VI. Application for patent scope 16. The advanced process control system for chemical mechanical polishing with multiple recipe operations as described in item 15 of the scope of patent application, wherein the advanced process control server and the advanced process control user graphical interface It also includes an advanced process control system database, and the advanced process control system database further has an advanced process control storage program. Page 26