TW587315B - Multi-chip module - Google Patents
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- TW587315B TW587315B TW092106588A TW92106588A TW587315B TW 587315 B TW587315 B TW 587315B TW 092106588 A TW092106588 A TW 092106588A TW 92106588 A TW92106588 A TW 92106588A TW 587315 B TW587315 B TW 587315B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
587315 五、發明說明(l) 登明所屬之技術領崖 本發明是有關於一種多晶片封裝模組,且特別是有關 於一種能夠減少基板翹曲(W a r P a g e )、避免晶片破裂以及 減少訊號傳送損失之多晶片封裝模組。 先前技術 在半導體產業中’積體電路(Integrated Circuits, ic)的生產,主要分為三個階段:晶圓(Wafer)的製造、積 體電路(ic)的製作以及積體電路(IC)的封裝(Package) 等。其中’裸晶片係經由在晶圓上形成半導體元件以及切 割晶圓等步驟而完成,而每一顆由晶圓切割所形成的裸晶 片’經由裸晶片上之銲墊(B〇nding Pad)與外部訊號電性 連接後’再以封膠材料將裸晶片包覆著,其封裝之目的在 於防止裸晶片受到濕氣、熱量、雜訊的影響,並提供裸晶 片與外部電路’比如與印刷電路板(printed Circui1: Board,PCB)或其他封裝用基板之間電性連接的媒介,如 此即完成積體電路的封裝(Package)步驟。 為了連接上述之裸晶片和封裝用基板,通常會使用導 線(Wiry或凸塊(Bump)作為接合之媒介。隨著晶片封裝積 集,的增加,多晶片模組封裝(Multi—Chip M〇dule,mcm) 已逐漸成為未來封裝型態的主要趨勢。 、 。月參照第1圖,第1圖所繪示為習知一種多晶片封裝模 組之剖面示意圖。其中多晶片封裝模組100至少包括一基、 板11 〇9 —晶片1 3 0、1 5 0、一封裝材料1 7 0。其中晶片1 3 0 例如疋邏輯晶片(1 〇g i c ce 11),晶片1 5 0例如是記憶體晶587315 V. Description of the invention (l) The technical leadership of Dengming The present invention relates to a multi-chip package module, and more particularly to a method capable of reducing substrate warpage, preventing wafer cracking, and reducing Multi-chip package modules with signal transmission loss. The production of integrated circuits (ICs) in the semiconductor industry in the previous technology is mainly divided into three stages: wafer (Wafer) manufacturing, integrated circuit (IC) manufacturing, and integrated circuit (IC) manufacturing. Package, etc. Among them, the "bare wafer is completed by steps such as forming a semiconductor element on the wafer and dicing the wafer, and each of the bare wafers formed by the wafer dicing" is performed by bonding pads on the bare wafer and After the external signal is electrically connected, the bare chip is then covered with a sealing material. The purpose of the package is to prevent the bare chip from being affected by moisture, heat and noise, and to provide the bare chip and external circuits, such as printed circuits. Printed Circui1: Board (PCB) or other medium for electrical connection between substrates for packaging, so as to complete the packaging step of the integrated circuit. In order to connect the bare chip and the packaging substrate mentioned above, wires (Wiry or Bump) are usually used as the bonding medium. With the increase in the number of chip packages, Multi-Chip Module Packaging (Multi-Chip Module) (Mcm) has gradually become the main trend of future packaging types. Refer to Figure 1 and Figure 1 for a cross-sectional schematic diagram of a conventional multi-chip packaging module. The multi-chip packaging module 100 at least includes One base, board 11 〇9—wafer 130, 150, a packaging material 170. Among them, the wafer 130 is, for example, a logic chip (10 gic ce 11), and the wafer 150 is, for example, a memory crystal.
587315 五、發明說明(2) 片(memory cel 1 ),且晶片130的面積係大於晶片15〇的面 積。晶片1 5 0係以凸塊1 5 2配設於基板1 1 〇之主動表面,固 定環(sti f fener ring)l40係環繞晶片150配設於基板i 10 上,而晶片1 3 0係堆疊配設於晶片1 5 〇與固定環j 4 〇上,並 且晶片130係藉由導線132電性連接基板11〇。封裝材料ι7〇 係包覆晶片1 3 0、1 5 0、導線1 3 2與基板1 1 〇主動表面。並 且,在基板1 1 0背面還配置有焊墊1 1 2與焊球11 4。 請參照第2圖,第2圖所繪示為習知另一種多晶片封裝 模組之剖面示意圖。其中多晶片封裝模組2 〇〇至少包括一 基板2 1 0、二晶片2 3 0、2 5 0、一封裝材料2 7 0。其中晶片 2 3 0例如是記憶體晶片,晶片2 5 0例如是邏輯晶片,且晶片 2 3 0的面積係大於晶片2 5 0的面積。晶片2 3 0係以背面貼合 配設於基板2 10之主動表面,並藉由導線2 32電性連接基板 210,晶片2 50係以背面貼合於晶片23〇上,並且晶片25〇係 藉由導線2 5 2電性連接基板2 1 〇。封裝材料2 7 〇係包覆晶片 230、250、導線232、252與基板210主動表面。並且,在 基板2 1 0背面還配置有焊墊2 1 2與焊球2 1 4。 然而’如使用第1圖的封裝結構的話,在晶片1 5 〇與晶 片130之間必須設置固定環140以強化晶片13〇,以防止晶 片1 5 0的破裂。而且,由於導線1 3 2的戴面積甚小並且、長度 甚長’使彳于況號會被快速地衣減並產生訊號延遲的現象, 從而影響訊號的傳送效能。 另一方面,如使用第2圖的封裝結構的話,需要使用 較大的基板2 1 0,使得基板2 1 〇容易因為與晶片的熱膨脹係587315 V. Description of the invention (2) slice (memory cel 1), and the area of the wafer 130 is larger than the area of the wafer 150. The wafer 1 50 is arranged on the active surface of the substrate 1 1 0 with bumps 15 2. The sti ferner ring 140 is arranged on the substrate i 10 around the wafer 150, and the wafer 1 3 0 is stacked. The chip 130 is arranged on the chip 150 and the fixing ring j 4, and the chip 130 is electrically connected to the substrate 11 through a wire 132. The packaging material ι70 is an active surface that covers the wafer 130, 150, the wires 132, and the substrate 110. In addition, pads 1 12 and solder balls 11 4 are also disposed on the back surface of the substrate 1 10. Please refer to FIG. 2. FIG. 2 is a schematic cross-sectional view showing another conventional multi-chip package module. The multi-chip package module 2000 includes at least one substrate 2 10, two chips 230, 250, and a packaging material 270. The wafer 230 is, for example, a memory wafer, and the wafer 250 is, for example, a logic wafer. The area of the wafer 230 is larger than the area of the wafer 250. Wafer 2 3 0 is attached on the active surface of substrate 2 10 with back bonding, and is electrically connected to substrate 210 through wires 2 32. Wafer 2 50 is attached to wafer 23 with back, and wafer 25 is The substrate 2 1 is electrically connected through the lead 2 5 2. The packaging material 270 is an active surface that covers the wafers 230, 250, the wires 232, 252, and the substrate 210. Further, pads 2 1 2 and solder balls 2 1 4 are arranged on the back surface of the substrate 2 10. However, if the package structure of FIG. 1 is used, a fixing ring 140 must be provided between the wafer 150 and the wafer 130 to strengthen the wafer 130 to prevent the wafer 150 from cracking. Moreover, because the wearing area of the wire 1 3 2 is very small and the length is very long, the phenomenon that the signal is rapidly reduced and the signal is delayed will affect the transmission performance of the signal. On the other hand, if the package structure shown in FIG. 2 is used, a larger substrate 2 1 0 needs to be used, so that the substrate 2 1 0 is easily susceptible to thermal expansion with the wafer.
10549twf.ptd 第7頁 587315 五、發明說明(3) 數(Coefficient of Thermal Expansion, CTE)不同而產 生翹曲(warpage),同樣的,由於導線2 52的載面積甚小並 且長度甚長’使得訊號會被快速地衰減並產生訊號延遲的 現象,從而影響訊號的傳送效能。再者,當晶片25b〇的面 積小於晶片2 30的面積甚多時,導線2 52係相當容易崩塌而 與導線232產生短路(short)的現象。 發明内容 因此,本發明的目的在提出一種多晶片封裝模組,能 夠降低因基板與晶片的熱膨脹係數不同所產生的應力從而 避免基板產生麵曲。 本發明的另一目的在提出一種多晶片封裝模組,能夠 縮短晶片與基板的訊號傳送路徑,以提升訊號的傳送效 能0 本發明的另 提南晶片的積集 本發明提供一種多 至少包括一第一 一目的在提出一種多晶片封裝模 度 能夠 -日片 曰曰 第一 與一封裝材料。 線焊墊係配設 表面與 基板之 性連接 之上表 封裝材 墊,且打 面 下 面配設在 導線係電 設於基板 接。以及 曰曰 至少一 下表面 打線焊 晶片封裝模組, 一基板、一第二 片具有一主動表 於主動表面。基 狹長孔,其中第 ,且於狹長孔係 墊與基板之上表 第二晶片與基板 面,且 料係包覆第一晶片、第 此多晶片封裝 晶片、複數條 面、複數個打 板係具有一上 一晶片係以主 暴露出打線焊 面。第二晶片 之上表面電性 二晶片、導線10549twf.ptd Page 7 587315 V. Description of the invention (3) Warpage occurs due to different Coefficient of Thermal Expansion (CTE). Similarly, because the load area of wire 2 52 is very small and the length is very long 'makes The signal will be rapidly attenuated and the signal will be delayed, which will affect the signal transmission performance. Furthermore, when the area of the wafer 25b0 is much smaller than the area of the wafer 2 30, the lead wire 2 52 is easily collapsed and a short circuit occurs with the lead wire 232. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a multi-chip package module, which can reduce the stress caused by the difference in thermal expansion coefficient between the substrate and the wafer, thereby avoiding surface warpage of the substrate. Another object of the present invention is to provide a multi-chip package module, which can shorten the signal transmission path between the chip and the substrate to improve the signal transmission efficiency. 0 The accumulation of another chip of the invention The invention provides a multi-chip package including at least one The first objective is to propose a multi-chip packaging module capable of making a first and a packaging material. The wire bonding pad is provided with a surface that is connected to the substrate. The top surface is a packaging material pad, and the bottom surface is provided with a wire system and the substrate is connected to the substrate. And said at least one lower surface wire bonding wafer package module, a substrate and a second piece having an active surface on the active surface. The base slot is the first and second slot and the substrate surface on the slot slot and the substrate, and the material covers the first wafer, the multi-chip package wafer, a plurality of faces, and a plurality of punching systems. Having a previous wafer mainly exposes the wire bonding surface. Electrical properties on the upper surface of the second wafer
10549twf.ptd 第8頁 587315 五、發明說明(4) 板之上表面與下表面。 而且,於上述多晶片封裝模組中,第二晶片係可以藉 由覆晶接合的方式,以複數個凸塊介於第二晶片與基板之 間並電性連接兩者。 而且,於上述多晶片封裝模組中,還可以將第二晶片 貼合於基板上,藉由打線的方式,以導線電性連接第二晶 片與基板。 尚且,於上述多晶片封裝模組中,還可以將一第三晶 片堆疊配設於第二晶片上,並且將第三晶片與基板之上表 面電性連接。 由上述可知,由於在基板配設有狹長孔,當晶片與基 板熱膨脹係數不同而產生應力時,此時可藉由狹長孔降低 基板上的應力,從而避免基板產生勉曲。 而且,由於晶片係個別貼附在基板的上、下表面。因 此能夠避免習知晶片與基板的電性連接路徑較長的問題, 而能夠縮短訊號傳送路徑,增進訊號傳送效能。 並且,由於晶片係個別貼附在基板的上、下表面,而 非採用堆疊的方式,因此並不需設置固定環亦不會產生晶 片破裂的問題。 - % 尚且,由於在將二晶片個別貼附在基板的上、下表面 之外,更於配設於上表面的晶片上配設另一晶片,在訊號 傳送路徑長度與習知相當的情況下,由於本發明之封裝結 構能夠配設較多的晶片,因而能夠使得多晶片封裝模組具 有較高的封裝積集度。10549twf.ptd Page 8 587315 V. Description of the invention (4) The upper and lower surfaces of the board. Moreover, in the above-mentioned multi-chip package module, the second chip can be interposed between the second chip and the substrate by a flip-chip bonding method and electrically connect the two. Moreover, in the above-mentioned multi-chip package module, a second chip can also be bonded to the substrate, and the second chip and the substrate can be electrically connected by wires by means of wire bonding. Moreover, in the above-mentioned multi-chip package module, a third chip can be stacked on the second chip, and the third chip can be electrically connected to the surface on the substrate. From the above, it can be known that, because the elongated holes are arranged in the substrate, when the thermal expansion coefficient of the wafer and the substrate is different and stress is generated, the elongated holes can be used to reduce the stress on the substrate at this time, so as to avoid substrate warping. Moreover, the wafers are individually attached to the upper and lower surfaces of the substrate. Therefore, the problem that the electrical connection path between the conventional chip and the substrate is relatively long can be avoided, and the signal transmission path can be shortened to improve the signal transmission performance. In addition, since the wafers are individually attached to the upper and lower surfaces of the substrate instead of being stacked, there is no need to provide a retaining ring and the problem of wafer cracking does not occur. -% Moreover, because the two wafers are individually attached to the upper and lower surfaces of the substrate, and another wafer is disposed on the wafer disposed on the upper surface, the signal transmission path length is equivalent to the conventional case. Because the packaging structure of the present invention can be configured with more wafers, the multi-chip packaging module can have a higher degree of packaging accumulation.
10549twf.ptd 第9頁 58731510549twf.ptd Page 9 587315
為讓本發明之上述目的、特徵、和優點能更明顯易 If ’下文特舉一較佳貫施例,並配合所附圖式,作詳細說 明如下: 。^ 口 實施方式: 第3圖所繪示為本發明較佳實施例之多晶片封裝模組 的剖面圖,且第4圖所繪示為本發明較佳實施例之多晶片 封裝模組的上視圖。請同時參照第3圖與第4圖。本發明較 佳實施例之封裝結構30 0至少包括一基板31 〇、晶片33〇、 350與封裝材料370。其中晶片330例如是邏輯(L〇gic)晶 片,且晶片3 5 0例如是記憶體(m e m 〇 r y)晶片,並且晶片3 3 〇 的面積係大於晶片3 5 0的面積。 晶片330具有一主動表面33 2 a及對應之一背面332b, 並且晶片330還具有打線焊墊(bonding pad)334,環繞在 晶片330之主動表面332a上的周圍位置。 基板310具有一上表面312a與一下表面312b,並且於 上表面312a與下表面312b個別具有晶圓設置區322a、晶圓 設置區322b。其中晶片330係以主動表面332a配設於下表 面3 1 2 b的晶圓設置區322b,並且,基板31〇還具有複數的 狹長孔(S 1 〇 t) 3 2 4,其中此些狹長孔3 2 4係對應晶片3 3 0的 打線焊墊3 3 4而配置,以於狹長孔3 2 4中暴露出晶片3 3 0'的 打線焊墊3 3 4。於本實施例中,狹長孔3 2 4係為4個而環繞 晶片酉己置區322b配置。 而且,基板3 1 0還具有複數個打線接點3丨4與複數個凸 塊接點3 1 6,其中凸塊接點3 1 6係配設於上表面3 1 2 a的晶片In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, if ', a preferred embodiment is given below, and in conjunction with the accompanying drawings, the detailed description is as follows:. ^ Embodiments: FIG. 3 is a cross-sectional view of a multi-chip package module according to a preferred embodiment of the present invention, and FIG. 4 is a top view of the multi-chip package module according to a preferred embodiment of the present invention. view. Please refer to Figure 3 and Figure 4 at the same time. The packaging structure 300 of the preferred embodiment of the present invention includes at least a substrate 310, a wafer 330, 350, and a packaging material 370. The wafer 330 is, for example, a logic wafer, and the wafer 350 is, for example, a memory (mem) wafer, and the area of the wafer 330 is larger than the area of the wafer 350. The chip 330 has an active surface 33 2 a and a corresponding back surface 332 b, and the chip 330 also has a bonding pad 334 that surrounds the surrounding positions on the active surface 332 a of the chip 330. The substrate 310 has an upper surface 312a and a lower surface 312b, and each of the upper surface 312a and the lower surface 312b has a wafer setting area 322a and a wafer setting area 322b. The wafer 330 is a wafer setting area 322b with the active surface 332a disposed on the lower surface 3 1 2 b, and the substrate 31 has a plurality of elongated holes (S 1 ot) 3 2 4, among which the elongated holes The 3 2 4 is arranged corresponding to the wire bonding pad 3 3 4 of the wafer 3 3 0 so that the wire bonding pad 3 3 4 of the wafer 3 3 0 'is exposed in the elongated hole 3 2 4. In this embodiment, the slotted holes 3 2 4 are four and are arranged around the wafer self-receiving area 322b. In addition, the substrate 3 1 0 also has a plurality of wire contacts 3 丨 4 and a plurality of bump contacts 3 1 6, wherein the bump contacts 3 1 6 are wafers arranged on the upper surface 3 1 2 a.
587315587315
配設區322a,尚且,如第4圖所示,其中部分的打線接點 314係可以配設於靠近狹長孔324 一側邊之晶片配置區322a 上,並且部分的打線接點314係可以配置於靠近狹長孔324 另一侧邊之基板31 0上表面31 2a。 晶片3 5 0係具有一主動表面3 5 2 a及對應之一背面 352b ’並且晶片350還具有凸塊焊墊354,配置在晶片330 之主動表面352a上,並且,晶片35 0係藉由凸塊3 56電性連 接凸塊焊墊354與晶片配置區322a的凸塊接點31 6。Provisioning area 322a. As shown in FIG. 4, some of the wire bonding contacts 314 can be arranged on the wafer arrangement area 322a near the side of the slot 324, and some of the wire bonding contacts 314 can be arranged. On the upper surface 31 2a of the substrate 31 0 near the other side of the slot 324. The wafer 3 5 0 has an active surface 3 5 2 a and a corresponding back surface 352 b ′, and the wafer 350 also has a bump pad 354 disposed on the active surface 352 a of the wafer 330, and the wafer 3 0 0 is formed by convex The blocks 3 56 are electrically connected to the bump contacts 316 of the bump bonding pads 354 and the wafer arrangement area 322a.
而且,晶片33 0係透過導線380以使晶片330與基板3 1〇 電性連接,而導線380之一端係接合到晶片33〇之打線焊墊 334上,導線380之另一端係接合到基板31〇之打線接點 另外’封裝材料370係包覆晶片330、35〇、導線38()、 基板310之上表面312a與下表面312]^。尚且,於基板“ο之 ^表面314上,在封裝材料3 7〇未包覆的位置還配置有焊墊 39〇,而焊球392係配設在焊墊390上。 於上述的多晶片封裝模組3 〇〇中,由於在基板31〇配設 孔324,當晶片330、35〇與基板31〇因熱膨脹係數不 二 生應力時,此時可藉由狹長孔324釋放基板310上的 應力’從而避免基板31〇產生翹曲。 、 而且,由於晶片330、350係個別貼附在基板31 〇下表 H 12b的晶片配設區322b與上表面3i2a的晶片配設區 敗因此能夠避免習知其中一個晶片與基板的電性連接 乂長的問題,因而能夠縮短訊號傳送路徑,增進訊號In addition, the wafer 330 is passed through the wire 380 to electrically connect the wafer 330 to the substrate 31, and one end of the wire 380 is bonded to the wire bonding pad 334 of the wafer 33. The other end of the wire 380 is bonded to the substrate 31. In addition, the wiring contacts ′ are encapsulating material 370 that covers the wafers 330, 350, the wires 38 (), the upper surface 312a and the lower surface 312 of the substrate 310] ^. Moreover, on the substrate ο surface 314, a solder pad 39 is disposed at a position not covered by the packaging material 370, and a solder ball 392 is disposed on the solder pad 390. In the above-mentioned multi-chip package, In module 3 00, since holes 324 are provided in the substrate 31, when the wafers 330, 35 and the substrate 31 are not stressed by the thermal expansion coefficient, the stress on the substrate 310 can be released through the elongated holes 324 at this time. Avoid warping of the substrate 31. Moreover, since the wafers 330 and 350 are individually attached to the substrate 31, the wafer arrangement area 322b of the table H 12b below and the wafer arrangement area of the upper surface 3i2a can be avoided, so that it can be avoided A problem of long electrical connection between the chip and the substrate can shorten the signal transmission path and improve the signal
587315 五、發明說明(7) 傳送效能,並能夠避免習知在晶圓面積差異較大時,導線 容易崩塌而造成短路的問題。 再者,由於晶片3 3 0、3 5 0係個別貼附在基板3 1 〇下表 面3 1 2 b的晶片配設區3 2 2 b與上表面3 1 2 a的晶片配設區 322a,而非採用堆疊的方式,因此並不需設置固定環,亦 不會產生晶片破裂的問題。587315 V. Description of the invention (7) Transmission efficiency, and can avoid the problem that the wires are easy to collapse and cause short circuit when the wafer area difference is large. Furthermore, since the wafers 3 3 0 and 3 50 are individually attached to the wafer arrangement area 3 2 2 b of the lower surface 3 1 2 b of the substrate 3 10 and the wafer arrangement area 322 a of the upper surface 3 1 2 a, Instead of adopting a stacking method, there is no need to provide a fixing ring, and the problem of chip cracking does not occur.
在第一實施例中晶片3 5 0係以覆晶接合的方式與基板 電性連接,然而本發明並非限定於此,請參照第5圖,其 繪示依照本發明第二實施例之一種多晶片封裝模組之剖面 放大圖’其中若是本實施例中的標號與上述較佳實施例相 同者,則表示在本實施例中所指明的構件係雷同於在第一 實施例中所指/明的構件,在此便不再贅述。在本實施例 中,晶片350係以背面352b貼合於基板31〇上表面312a之晶 圓配置區3 2 2 a,且於晶片3 5 〇上係以複數的打線焊墊3 5 8取 代^ 一貫施例之複數個凸塊焊塾(bump pad) 354,並配設 在環繞晶片330之主動表面352a上的周圍位置。並且於基 板310上係以複數的打線接點318取代第一實施例之複數個 凸塊接點316,配設在環繞晶片35〇之晶圓配置區322&。再 以導f382電性連接打線焊墊358與打線接點318。 亚且’在上述第一實施例中係將晶片330、35 0配k於 & 9板3 1 〇之下、上表面3 1 2 b、3 1 2 a的晶圓配置區3 2 2 b、 a,然而本發明並非限定於此,請參照第6圖,其繪示 大a ,、、 J ί二 例之一種多晶片封裝模組之剖面放 圖其中若是本實施例中的標號與上述較佳實施例相同In the first embodiment, the wafer 350 is electrically connected to the substrate by flip-chip bonding. However, the present invention is not limited to this. Please refer to FIG. 5, which shows a multi-layer circuit according to the second embodiment of the present invention. An enlarged cross-sectional view of the chip package module 'If the reference numerals in this embodiment are the same as those in the preferred embodiment, it means that the components specified in this embodiment are the same as those in the first embodiment. The components are not repeated here. In this embodiment, the wafer 350 is attached to the wafer configuration area 3 2 2 a on the upper surface 312 a of the substrate 31 with the back surface 352 b, and is replaced with a plurality of wire bonding pads 3 5 8 on the wafer 3 5 ^ A plurality of bump pads 354 are provided in the conventional embodiment, and the bump pads 354 are arranged around the active surface 352 a of the wafer 330. In addition, the plurality of bump contacts 316 of the first embodiment are replaced with a plurality of wire bonding contacts 318 on the substrate 310, and are arranged in a wafer configuration area 322 & Then, the wire bonding pad 358 and the wire bonding contact 318 are electrically connected by the conductor f382. In the first embodiment described above, the wafers 330 and 3500 are arranged below the & 9 plate 3 1 0 and the upper surface 3 1 2 b and 3 1 2 a are the wafer arrangement areas 3 2 2 b. , A, however, the present invention is not limited to this. Please refer to FIG. 6, which shows a cross-sectional view of a multi-chip package module of two examples a, a, and J. If the number in this embodiment is the same as the above, The preferred embodiment is the same
1〇549twf.Ptd 第12頁 5873151〇549twf.Ptd Page 12 587315
者丄則表示在本實施例中所指明的構件係雷同於在第一、 一貫施例中所指明的構件,在此便不再贅述。在本實施例 中,係在第一實施例的多晶片封裝模組3〇〇中更包括一晶 片4 1 0。晶片4 1 0係具有一主動表面4 J 2a及對應之一背面This means that the components specified in this embodiment are identical to those specified in the first and consistent embodiments, and will not be repeated here. In this embodiment, the multi-chip package module 300 of the first embodiment further includes a wafer 4 10. Chip 4 1 0 has an active surface 4 J 2a and a corresponding back surface
4 1 2b,並且晶片4 1 〇還具有打線焊墊4 j 4,配置在晶片4 j Q 之主動表面4i2a上的周圍位置,並且在基板31〇之上表面 312a配設有對應之打線接點32〇。晶片41〇係以背面““貼 合於晶片35 0的背面352b,並藉由導線42〇以使晶片41〇與 基板3 10電性連接,而導線42〇之-端係接合到晶片410之4 1 2b, and the wafer 4 1 〇 also has a wire bonding pad 4 j 4, which is arranged on the surrounding surface of the active surface 4 i 2 a of the wafer 4 j Q, and a corresponding wire bonding contact is arranged on the surface 312 a above the substrate 31 〇 32〇. The wafer 41o is attached to the back surface 352b of the wafer 350 with the back surface ", and the wafer 41o is electrically connected to the substrate 310 by a wire 42o, and the -end of the wire 42o is bonded to the wafer 410.
打線焊塾414上’導線42G之另-端係接合到基板31〇之打 線接點3 2 0上。 /於上述的多晶片封裝模組300中,由於在將晶片330、 350係個別貼附在基板31〇之晶圓配置區32〇的下、上表面 H、322b之外,更於晶片35〇上配設一晶片410並與基板 電性連接,在訊號傳送路徑長度與習知相當的情況 下,於本發明能夠配設較多的晶片(3 3 0、3 5 0、4 1 0 ), :而月匕夠使侍多晶片封裝模組3 〇 〇具有較高的封裝積集 度。 •、’上所述,本發明之多晶片封裝模組至少具有下列優 1 ^述的多晶片封裝模組中,由於在基板配設有狹 Ϊ拉出片與基板熱膨脹係數不同而產生應力時,此時 曲:由狹長孔降低基板上的應力,從而避免基板產生翹The other end of the wire 42G on the wire bond pad 414 is bonded to the wire contact 3 2 0 of the substrate 31. / In the above-mentioned multi-chip package module 300, the wafers 330 and 350 are individually attached to the lower and upper surfaces H and 322b of the wafer arrangement area 32o of the substrate 31o, and further to the wafer 35o. A chip 410 is arranged on the chip and electrically connected to the substrate. Under the condition that the length of the signal transmission path is equivalent to the conventional one, more chips (3 3 0, 3 5 0, 4 1 0) can be configured in the present invention. : And the moon dagger is enough to make the Shiduo chip packaging module 300 have a higher package accumulation degree. • As mentioned above, the multi-chip package module of the present invention has at least the following multi-chip package modules. When the substrate is provided with a narrow pull-out piece and the substrate has a different thermal expansion coefficient, stress occurs. At this time, the curvature: the stress on the substrate is reduced by the elongated hole, so that the substrate is not warped
587315 五、發明說明(9) 2. 於上述的 在基板的上、下 性連接路徑較長 訊號傳送效能。 3. 於上述的 在基板的上、下 設置固定環亦不 4. 於上述的 貼附在基板的上 多晶片封裝模組中,由於晶片係個別貼附 表面。因此能夠避免習知晶片與基板的電 的問題,而能夠縮短訊號傳送路徑,增進 上配設另 曰曰 片 多晶片 表面, 會產生 多晶片 、下表 ,在訊 之封裝 下,由於本發明 夠使得多晶片封裝模組 雖然本發明已以一 以限定本發明,任何熟 神和範圍内,當可作各 護範圍當視後附之申請 封裝模 而非採 晶片破 封裝模 面之外 號傳送 結構能 具有較 較佳實 習此技 種之更 專利範 組中,由 用堆疊的 裂的問題 組中,由 ,更於配 路徑長度 夠配設較 高的封裝 施例揭露 藝者,在 動與潤飾 圍所界定 於晶片係個 方式,因此 〇 於在將二晶 設於上表面 與習知相當 多的晶片’ 積集度。 如上,然其 不脫離本發 ,因此本發 者為準。 別貼附 並不需 片個別 白勺晶片 的情況 因而能 並非用 明之精 明之保587315 V. Description of the invention (9) 2. In the above, the upper and lower sexual connection paths of the substrate are relatively long. Signal transmission performance. 3. It is not necessary to install a fixing ring on the substrate above or below the substrate. 4. In the above-mentioned multi-chip package module attached to the substrate, the wafer is individually attached to the surface. Therefore, the electrical problems of the conventional chip and the substrate can be avoided, and the signal transmission path can be shortened, and the multi-chip surface on the other side can be increased. Multi-chips and the following table will be generated. Even though the present invention has been defined by the present invention to limit the present invention, within any familiarity and scope, it can be used as a protection scope when the attached packaging mold is used instead of the chip package. The structure can have a better practice of this technology in a more patented group. From the problem group that uses stacking cracks, it is more suitable to configure a path with a length enough to provide a higher package. The refining enclosure is defined by the wafer system, so there is a large amount of wafers in which the two crystals are set on the upper surface and the conventional one has a degree of accumulation. As above, however, it does not depart from this issue, so this issue prevails. Don't attach the situation that does not require individual chips
10549twf.ptd 第14頁 587315 圖式簡單說明 第1圖所繪示為習知一種多晶片封裝模組的剖面示意 圖。 第2圖所繪示為習知另一種多晶片封裝模組的剖面示 意圖。 第3圖所繪示為本發明第一實施例之一種多晶片封裝 模組的剖面示意圖。 第4所繪示為本發明第一實施例之一種多晶片封裝模 組的上視示意圖。 第5圖所繪示為本發明第二實施例之一種多晶片封裝 模組的剖面示意圖。 第6圖所繪示為本發明第三實施例之一種多晶片封裝 模組的剖面示意圖。 圖式標示說明: 100、2 0 0、30 0 :多晶片封裝模組 1 1 0、2 1 0、3 1 0 :基板 1 1 2、2 1 2、3 9 0 :焊墊 1 14、214、392 :焊球 130 、 150 、 230 、 250 、 330 、 350 、 410 :晶片 132、232、252、380、382、4 20 ··導線 1 5 2、3 5 6 :凸塊 ' 1 7 0、2 7 0、3 7 0 :封裝材料 3 1 2 a :上表面 312b :下表面 3 1 4、3 1 8、3 2 0 :打線接點10549twf.ptd Page 14 587315 Brief Description of Drawings Figure 1 shows a schematic cross-sectional view of a conventional multi-chip package module. FIG. 2 is a schematic cross-sectional view showing another conventional multi-chip package module. FIG. 3 is a schematic cross-sectional view of a multi-chip package module according to a first embodiment of the present invention. Fig. 4 is a schematic top view of a multi-chip package module according to the first embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a multi-chip package module according to a second embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a multi-chip package module according to a third embodiment of the present invention. Graphical description: 100, 2 0, 30 0: Multi-chip package module 1 1 0, 2 1 0, 3 1 0: Substrate 1 1 2, 2 1 2, 3 9 0: Solder pad 1 14, 214 392: Solder balls 130, 150, 230, 250, 330, 350, 410: Wafers 132, 232, 252, 380, 382, 4 20 ·· Wire 1 5 2, 3 5 6: Bumps' 1 7 0, 2 7 0, 3 7 0: packaging material 3 1 2 a: upper surface 312b: lower surface 3 1 4, 3 1 8, 3 2 0: wire contact
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TW587315B true TW587315B (en) | 2004-05-11 |
TW200419736A TW200419736A (en) | 2004-10-01 |
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TW092106588A TW587315B (en) | 2003-03-25 | 2003-03-25 | Multi-chip module |
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