585931 經满部中央標準局員Η消費合作社印t A7 B7五、發明説明（'） 链明甯暑 本發明有關一種電漿膜澱積裝置，用Μ藉由一產生於 真空室內之電漿束來蒸發-提供在熔爐之上作為陽極之 材料而澱積一薄膜於物體上。 典型之電漿瞑澱積裝置係通知為一雛子電鍍裝置及一 電漿CVD(化學蒸氣澱積法）裝置。已知作為離子電鍍裝 置之形式係利用一種作用為電弧放電形式之電漿源的腰 力漸減電漿源或HCD電漿源。 此一雛子電鍍裝置包含一真空室，一電漿束產生器（ 電漿源），一熔爐，及一操縱線圈，該真空室裝備有該 電漿束產生器而該熔爐則作為一配置在真空室內之陽極 ，該操縱線圈係置放於該真空室之外部Κ導引該電漿源 所產生之一電漿束於該陽極內。 於所述形式之雛子電鍍裝置中，電漿束係產生於該電 漿束產生器與該熔爐之間，該電漿束係導引於一配置在 該熔爐之上的材料上，藉焦耳熱量來加熱該材料且藉此 蒸發該材料，該材料所蒸發之粒子或蒸氣化之材料係由 該電漿束予以離子化，該等離子化之粒子則澱積於一被 供應Κ負電壓，一浮動電壓，或一自鵂壓之基板的表面 上，結果，一薄膜澱積或形成於該基板之上。 此處，該材料係如下述來蒸發。導引至該熔爐之電獎 束對著該熔爐及/或在熔爐內之材料放電，當一電流流 經該材料時，熔爐內之材料係瞬間加熱，此通常稱為放 電引燃，所加熱之材料開始蒸發，之後，該材料繼鑛由 -3- (請先閱讀背面之注意事項再填寫本頁) 、11 I 7 1 I - 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 585931 經漪部中央標準局員Μ消費合作社印製 A7 B7 五、發明説明（> ) 焦耳熱量加熱及蒸發。 於此種電漿膜澱積裝置，當產生電漿束時，該熔爐在 溫度上係很高的。當該熔爐在溫度上很高時，該電漿束 可能不穩定且該熔爐可能熔化。因此，企望由類似水之 冷卻劑來冷卻熔爐，特別地，該熔爐係設計Μ流經冷卻 酬於該處，為了循環該冷卻劑Κ冷卻該熔爐，該熔爐係 配置有一冷卻劑線路其含有一泵用以抽運該冷卻劑及諸 管線用Μ相互連接該熔爐之內部與該泵。 當此種電漿膜澱積裝置利用SiO, Si〇2 , MgO, ΖηΟ, 或Α 12 03作為材料時，常難Μ從電漿束透過該材料來流 通電流；同時亦難Μ從該電漿束放電至熔爐，因為該熔 爐覆蓋有作為電氣絕緣體材料之材料，因而難Μ造成放 電引燃，即使放電引燃發生，該材料亦不會由焦耳熱量 所加熱，因此難Κ穩定地澱積該薄膜。 此外，因為該材料係容納於由冷卻劑所冷卻之熔爐中 ，所Μ —部分與該熔爐接觸之材料會快速地冷卻，特別 地，若該材料憔一諸如鋁U1)之具有高的熱傅導性之物 質時，該材料會部分地冷卻，雖大部分之該材料係加熱 於高溫且熔化。於此例中，具有濺射，不正常放電，不 穩定熔化，或粒狀物之滯留常發生於熔爐中之缺點，因 此，亦難Μ穩定地澱積該薄膜。 發 JOL1 因此，本發明之目的在於提供一種電漿膜澱積裝置， 其具有穩定性地澱積多種具有種種例如電氣絕緣，高熔 -4- 單农-- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 585931 經满部中央標準局員工消費合作社印f A7 B7五、發明説明（夕） 點，及高的熱傳導性之特徵的物質作為材料之能力。 當說明進行時，本發明之說明將呈明顯。 本發明可應用之電漿膜澱積裝置係用Μ藉一產生於真 空室內之電漿束來蒸發一材料Μ澱積一薄膜於一物體上。 根據本發明，該電漿膜澱積裝置含有：一溶爐，置放 於真空室內；Μ及一襯墊，部分地與該熔爐接觸Μ保持 低的熱傳導性於該熔爐與該襯墊之間用Μ容納該材料。 齓式」811服— 第1麵係習知離子電鍍裝置之垂直横截面圖； 第2 _係一垂直横截面圖，顯示根據本發明之一第一 實_例之離子電鍍裝置之主要部分； 第3匾傜一垂直横截面圓，顯示一用於根據本發明該 第一實施例之離子電鍍裝置的熔爐之另一實例；以及 第4麵係一垂直横截面圈，顯示根據本發明之4二實 豳例之離子電鍍裝置的主要部分。 較ϋ施1羞1_ 參考第1圓，係描述一習知之離子電鍍裝置使易於理 解本發明為目的，該離子電鍍裝置包含一氣密式真空室 10,該真空室10係透過一導引單元12而裝備有一電漿束 產生器20,例如該電漿束產生器20可為一壓力漸減之電 漿槍，一操縦線圈31置放於導引單元12之外部來導引一 電漿束300,該電漿束產生器20裝備有一第一中間電漿27 及一第二中間電極28，該第一及第二中間電極27及28係 用於電漿束之收斂且同心地安排於該電漿束產生器20之 _ 5 - (請先閱讀背面之注意事項再填寫本頁)585931 Printed by the Central Standards Bureau and the Consumer Cooperative Association A7 B7 V. Description of the invention (') The invention relates to a plasma film deposition device that uses M to evaporate through a plasma beam generated in a vacuum chamber. -Providing a material as an anode over the furnace to deposit a thin film on the object. A typical plasma-thickness deposition device is a notification device for electroplating and a plasma CVD (chemical vapor deposition) device. A form known as an ion plating apparatus utilizes a tapered plasma source or an HCD plasma source that acts as a plasma source in the form of an arc discharge. This young electroplating device includes a vacuum chamber, a plasma beam generator (plasma source), a furnace, and a steering coil. The vacuum chamber is equipped with the plasma beam generator and the furnace is arranged in a vacuum. For the anode in the room, the steering coil is placed outside the vacuum chamber to guide a plasma beam generated by the plasma source in the anode. In the above-mentioned electroplating device, a plasma beam is generated between the plasma beam generator and the furnace, and the plasma beam is guided on a material disposed on the furnace, and the Joule heat is used. To heat the material and thereby evaporate the material. The particles or vaporized material evaporated by the material are ionized by the plasma beam, and the ionized particles are deposited on a negative voltage supplied, a floating Voltage, or a self-pressing surface of the substrate, and as a result, a thin film is deposited or formed on the substrate. Here, the material is evaporated as described below. The electric beam directed to the furnace is discharged toward the furnace and / or the material in the furnace. When an electric current flows through the material, the material in the furnace is instantaneously heated. This is usually called discharge ignition. The material began to evaporate. After that, the material was mined by -3- (please read the precautions on the back before filling in this page), 11 I 7 1 I-this paper size is applicable to Chinese National Standard (CNS) Λ4 specification (210X297) (Centi) 585931 Printed by the Consumer Standards of the Central Standards Bureau of the Ministry of Economic Affairs, M7, A7, B7 V. Description of the invention (>) Joule heat is heated and evaporated. In such a plasma film deposition apparatus, when a plasma beam is generated, the furnace is extremely high in temperature. When the furnace is high in temperature, the plasma beam may be unstable and the furnace may melt. Therefore, it is expected that the furnace is cooled by a water-like coolant. In particular, the furnace is designed to flow through the cooling system. In order to circulate the coolant K to cool the furnace, the furnace is equipped with a coolant circuit. A pump is used to pump the coolant and the pipelines are interconnected with the inside of the furnace and the pump. When such a plasma film deposition device uses SiO, SiO2, MgO, ZnO, or A 12 03 as a material, it is often difficult to circulate current from the plasma beam through the material; at the same time, it is also difficult to circulate current from the plasma beam. Discharge to the furnace, because the furnace is covered with a material as an electrical insulator material, it is difficult to cause ignition due to discharge. Even if the discharge ignition occurs, the material is not heated by Joule heat, so it is difficult to deposit the film stably. . In addition, because the material is contained in a furnace cooled by a coolant, a portion of the material in contact with the furnace is rapidly cooled, and in particular, if the material has a high thermal conductivity such as aluminum U1) In the case of conductive materials, the material is partially cooled, although most of the material is heated to high temperatures and melts. In this example, there are disadvantages that sputtering, abnormal discharge, unstable melting, or retention of granular materials often occur in a furnace, and therefore, it is difficult to deposit the film stably. JOL1 Therefore, the object of the present invention is to provide a plasma film deposition device, which can stably deposit a variety of types such as electrical insulation, high-melting -4- single farmer-(Please read the precautions on the back before filling (This page) This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 585931 Printed by the Central Bureau of Standards Consumer Cooperatives f A7 B7 V. Description of invention (Evening) point and high thermal conductivity characteristics The ability of a substance as a material. As the description proceeds, the description of the invention will become apparent. The plasma film deposition device applicable to the present invention uses M to deposit a thin film on an object by evaporating a material M by a plasma beam generated in a vacuum chamber. According to the present invention, the plasma film deposition device includes: a melting furnace, which is placed in a vacuum chamber; and a gasket, which is partially in contact with the furnace. M maintains a low thermal conductivity between the furnace and the gasket. M holds the material. "Type 811"-the first side is a vertical cross-sectional view of a conventional ion plating device; the second side is a vertical cross-sectional view showing a main part of an ion plating device according to a first embodiment of the present invention; The third plaque is a circle with a vertical cross section, showing another example of a furnace for the ion plating apparatus according to the first embodiment of the present invention; and the fourth side is a vertical cross section ring, showing a fourth according to the present invention. The main part of the ion plating device of the second example. Compared with Shi Shi 1_1, referring to the first circle, a conventional ion plating device is described for the purpose of easy understanding of the present invention. The ion plating device includes an air-tight vacuum chamber 10 through a guide unit 12 And equipped with a plasma beam generator 20, for example, the plasma beam generator 20 may be a plasma gun with a decreasing pressure, an operating coil 31 is placed outside the guide unit 12 to guide a plasma beam 300, The plasma beam generator 20 is equipped with a first intermediate plasma 27 and a second intermediate electrode 28. The first and second intermediate electrodes 27 and 28 are used for the convergence of the plasma beam and are arranged concentrically in the plasma. Beam Generator 20 of _ 5-(Please read the precautions on the back before filling this page)
本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 585931 經满部中央標準局員_τ消費合作和印f A7 B7五、發明説明（4 ) 中，該第一中間電極27藏置一永久磁鐵27a使其磁袖平 行於電漿束產生器20之中心軸，第二中間電極28藏置一 線圈28^使其中心軸與該電漿束產生器20之中心軸一致。 該電漿束產生器20含有一絕緣管26,與一由第一及第 二中間電極27及28所界定之路徑相通，該絕緣管21可為 一例如玻璃管，一中空之圓筒22置放於該絕緣管21之中 ,該圓筒係由鉗（Mo)所構成而藏置一由組（Ta)所構成之 管線23, —由LaB6K組成之圓形板24畫分由該圓筒22與 該管線23所界定之空間。該絕緣管21,該圓筒22,及該 管線23之一端係黏附於一输送部25,該输送部25具有一 形成於其中之載體氣體入口 26 K接受諸如惰性氣體之載 體氣體，該惰性氣體可為例如氤（Ar)氣，該載體氣體通 過管線23進入真空室10。 欲處堙之基板100係置放於該真空室10之中，該基板 100係由一運送裝置61所支撐，該基板100連接於一直流 電源Μ用於負儸壓。電氣地作用為一陽極之熔爐41係置 放於真空室10之底部上且相對於該基板100。一輔助陽 極42係置放Μ留下一固定空間包圍於該熔鳙41之外通邊 ，該輔肋陽極42藏置一永久磁嫌。 該輸送部25連接於一可變電源90之負側，則可變電源 9 0之正側則分別地透過電阻R 1及R 2連接於該第一及第二 中間電極27及28,該熔爐41係連接於該可變電源90,及 該等電姐R 1及R 2。 一氣體入口 l〇a及一氣體排氣出口 10b係形成於真空室 (請先閱讀背面之注意事項再填寫本頁)This paper size applies to Chinese National Standard (CNS) Λ4 specification (210X297 mm) 585931 Member of the Central Standards Bureau _τ Consumer Cooperation and Printing f A7 B7 5. In the description of the invention (4), the first intermediate electrode 27 is hidden A permanent magnet 27 a has its magnetic sleeve parallel to the central axis of the plasma beam generator 20, and the second intermediate electrode 28 hides a coil 28 ^ so that its central axis is consistent with the central axis of the plasma beam generator 20. The plasma beam generator 20 includes an insulating tube 26 communicating with a path defined by the first and second intermediate electrodes 27 and 28. The insulating tube 21 may be, for example, a glass tube, and a hollow cylinder 22 is disposed. Placed in the insulating tube 21, the cylinder is composed of pliers (Mo) and hides a pipeline 23 composed of groups (Ta), a circular plate 24 composed of LaB6K is divided by the cylinder 22 and the space defined by the pipeline 23. One end of the insulating tube 21, the cylinder 22, and the pipeline 23 is adhered to a conveying portion 25 having a carrier gas inlet 26 formed therein to receive a carrier gas such as an inert gas, the inert gas It may be, for example, krypton (Ar) gas, and the carrier gas enters the vacuum chamber 10 through a line 23. A substrate 100 to be processed is placed in the vacuum chamber 10, the substrate 100 is supported by a transport device 61, and the substrate 100 is connected to a DC power source M for negative pressure. A furnace 41 electrically acting as an anode is placed on the bottom of the vacuum chamber 10 and opposite to the substrate 100. An auxiliary anode 42 is placed to leave a fixed space surrounding the through edge of the molten iron 41. The auxiliary rib anode 42 hides a permanent magnet. The conveying part 25 is connected to the negative side of a variable power source 90, and the positive side of the variable power source 90 is connected to the first and second intermediate electrodes 27 and 28 through resistors R1 and R2, respectively. The furnace 41 is connected to the variable power source 90, and the electric ladies R 1 and R 2. A gas inlet 10a and a gas exhaust outlet 10b are formed in the vacuum chamber (please read the precautions on the back before filling this page)
本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 3 9 5 δ 五 經漪部中央標隼局眞工消費合作社印？^ A7-— _____發明説明（r ) — h之側壁中，該氣體人口 lost係用於導入諸如惰性氣II 之載體氣體，例如該惰性氣體可為氨（Ar)氣或氨（He)氣 ，該氣體排氣出口 l〇b係用於自該真空室排放氣體，該 氣鴉入口 10a係連接於一氣體供應源（未圖示），而該氣 排氣出口 l〇b則連接於一氣體排氣泵（未國示）。 於上述雛子電鍍裝置中，當該載體氣體導入通過該戟 _氣體入口 26時，放電係開始於該第一中間電極27與該 _筒22之間，結果•產生電漿束300,該電漿束300係由 操镟線圏31及輔肋陽極42中永久磁嫌所導引，而到達作 用為陽極之熔爐41及該輔肋陽極42。 甯該電漿束300到達該熔爐41時，在該熔爐41上之一 材料200由焦耳熱量所加熱而蒸發，該材料200所蒸發之 粒子係由電漿束300所離子化，離子化之粒子會澱積在 _加有一負電壓，一浮動電壓，或一自偏壓之基板1〇〇 之表面上，結果，在基板100之上形成一薄膜。 在此種含有第1國中所示裝置之電漿膜澱積裝置中， 當電漿束產生時該熔爐係加熱至高溫，於此例中，該電 漿束可能呈不穩定且該熔爐可能熔化，因此，企望該熔 爐係由諸如水之冷卻劑所冷卻，特別地，該熔爐係設計 Μ便流過該冷卻劑於其中，為了循環該冷卻劑於該熔爐 之內，該裝置配置有一冷卻劑線路，該冷卻劑線路含有 一泵用Μ油運該冷卻劑Μ及諸管線用以循環該冷卻劑。 第一實施JL 參照第2圈，作為根據本發明電漿膜澱積裝置之一第 -7- (請先閱讀背面之注意事項再填寫本頁) 、1Τ d 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 經满部中央標準局貝X,消費合作社印製 585931 A7 B7 五、發明説明u ) 一實_例的雛子電鍍裝置含有相類似於第1圈中所描繪 之該等部件，也就是說該離子電鍍裝置含有一真空室， 一電漿束產生器（電漿源），一熔爐，一輔肋陽極42,以 及一操鐮線圈。如結合於第1圖之所述，該電漿束產生 器係黏附於該真空室，該熔爐係置放於該真空室之中， 該輔肋陽極42係定位Μ留下一固定空間包圍在該熔爐41 之外週邊，該輔肋陽極42藏置一永久磁鐵，該操縱線圈 係置放於真空室之外部來導引由該電漿源所產生之電漿 束進入該陽極之中。 於該雛子電鍍裝置中，電漿束係產生於該電漿束產生 器與該熔爐41之間，該電漿束被導引至材料200之上Μ 由焦耳熱量來加熱該材料及蒸發該材料，該材料200所 蒸發之粒子係由電漿束予Μ離子化，而離子化之粒子則 澱積在一被供應Μ負電壓，浮動電壓，或自鵂壓之基板 之峩面上，結果，一薄膜澱積或形成在該基板之上。 熔爐41及輔肋陽極4 2係由一黏附於真空室之底部部分 之支撐板50所支撐，該熔爐41係由一絕緣板82與該支撐 板50電氣地絕緣，該輔肋陽棰42則由一絕緣板81與該支 撐板50電氣地絕緣。一凹部41a形成於該熔爐41之頂部 表面Μ容納材料200。作用為一冷卻空間之中空之空間 41b係形成在其中配置有一凸緣之下方部之中。該中空 之空間41b係連接於管線71c與71b用於作為冷卻劑之冷 卻水之循環。 該輔肋陽極42具有一中空圓形之磁鐵盒，該圓^磁鐵 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 3 9 5 δ 5 Printed by the Masonry Consumer Cooperative of the Central Bureau of Standardization of the Ministry of Economic Affairs? ^ A7-— _____ Description of the invention (r) — In the side wall of h, the gas lost is used to introduce a carrier gas such as inert gas II. For example, the inert gas may be ammonia (Ar) gas or ammonia (He) gas. The gas exhaust outlet 10b is used to exhaust gas from the vacuum chamber. The gas inlet 10a is connected to a gas supply source (not shown), and the gas exhaust outlet 10b is connected to a Gas exhaust pump (not shown). In the above-mentioned electroplating device, when the carrier gas is introduced through the _ gas inlet 26, the discharge system starts between the first intermediate electrode 27 and the _ cylinder 22. As a result, a plasma beam 300 is generated, and the plasma The bundle 300 is guided by the permanent magnets in the operating coil 31 and the auxiliary rib anode 42, and reaches the furnace 41 serving as the anode and the auxiliary rib anode 42. Rather, when the plasma beam 300 reaches the furnace 41, a material 200 on the furnace 41 is heated and evaporated by Joule heat, and the particles evaporated by the material 200 are ionized and ionized particles by the plasma beam 300 It will be deposited on the surface of a substrate 100 with a negative voltage, a floating voltage, or a self-bias voltage. As a result, a thin film is formed on the substrate 100. In such a plasma film deposition apparatus containing the device shown in the first country, the furnace is heated to a high temperature when a plasma beam is generated. In this example, the plasma beam may be unstable and the furnace may melt. Therefore, it is expected that the furnace is cooled by a coolant such as water. In particular, the furnace system M is designed to flow through the coolant therein. In order to circulate the coolant in the furnace, the device is provided with a coolant circuit. The coolant circuit contains a pump M to transport the coolant M and pipelines to circulate the coolant. The first implementation of JL refers to the second circle, as one of the plasma film deposition devices according to the present invention. -7- (Please read the precautions on the back before filling this page), 1T d This paper size applies Chinese National Standards (CNS) A4 specification (210 × 297 mm) printed by the Central Bureau of Standards X, printed by the consumer cooperative 585931 A7 B7 V. Description of the invention u) A real-life example of an electroplating device containing a child similar to that described in the first circle And other components, that is, the ion plating apparatus includes a vacuum chamber, a plasma beam generator (plasma source), a melting furnace, an auxiliary rib anode 42, and a sickle coil. As described in conjunction with FIG. 1, the plasma beam generator is adhered to the vacuum chamber, the furnace is placed in the vacuum chamber, and the auxiliary rib anode 42 is positioned at a position M to surround a fixed space. Outside the furnace 41, the auxiliary rib anode 42 houses a permanent magnet. The steering coil is placed outside the vacuum chamber to guide the plasma beam generated by the plasma source into the anode. In the hatchling electroplating device, a plasma beam is generated between the plasma beam generator and the furnace 41. The plasma beam is guided above the material 200. The material is heated by Joule heat and the material is evaporated. The particles evaporated by the material 200 are ionized by the plasma beam, and the ionized particles are deposited on the surface of a substrate that is supplied with a negative voltage, floating voltage, or self-pressing. As a result, A thin film is deposited or formed on the substrate. The furnace 41 and the auxiliary rib anode 42 are supported by a support plate 50 adhered to the bottom portion of the vacuum chamber. The furnace 41 is electrically insulated from the support plate 50 by an insulating plate 82, and the auxiliary rib anode 42 is An insulating plate 81 is electrically insulated from the support plate 50. A recess 41a is formed on the top surface M of the furnace 41 to receive the material 200. A hollow space 41b serving as a cooling space is formed in a lower portion in which a flange is disposed. The hollow space 41b is connected to the lines 71c and 71b for circulation of cooling water as a coolant. The auxiliary rib anode 42 has a hollow circular magnet box, and the round ^ magnet The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)
585931 A7 B7 經淆部中次標绛局Μ.Τ-消费合作社印製 五、發明説明（ 盒愫與熔爐41同心地安排著及包圍該熔爐之上方部分。 一 形永久磁鐵421及一線圈422係位於該圓形之磁鐵盒 中，該圓形永久磁鐵421之極_係平行於垂直方_，線 臛422削與該圓形永久磁嫌421結合以用於導引電獎束進 入該熔爐41之內。該圓形之磁鐵盒具有一圓形之上方盒 體423a及一圆形之下方盒體423b°於此例中，水冷卻空 間係形成於該圓形之磁鐵盒內，該11方盒ffi423a具有一 入口及一出口形成於該處，該入口及出口分別地連接於 一管線71a及管線71c用W循環冷卻水° 該雛子電擁裝置尚含有一 _墊43用Μ容納材料200° 該類塾43具有導電性，熱阻性及一開口於其上方端末 處之圓柱形狀。該_塾43係、& #胃585931 A7 B7 Printed by the Ministry of Standards and Technology Bureau M.T-Consumer Cooperative of the Ministry of Confusion 5. Description of the invention (The box and the furnace 41 are arranged concentrically and surround the upper part of the furnace. A permanent magnet 421 and a coil 422 It is located in the circular magnet box, the pole of the circular permanent magnet 421 is parallel to the vertical direction, and the wire coil 422 is combined with the circular permanent magnet 421 to guide the electric prize beam into the furnace. Within 41. The circular magnet case has a circular upper case 423a and a circular lower case 423b °. In this example, a water-cooled space is formed in the circular magnet case. The 11 The square box ffi423a has an inlet and an outlet formed there, and the inlet and outlet are respectively connected to a pipeline 71a and a pipeline 71c with W circulating cooling water. ° This type of 塾 43 has electrical conductivity, thermal resistance, and a cylindrical shape that opens at the upper end. The _ 塾 43 series, &# stomach
氮化物（BN),鉬（Mo)，ftl(W)，銳-(Ta),及矽 物I (S i C )所構成。 該襯络43部分地與溶液41接觸Μ保持低的熱傳導性及 保持導電性於熔爐41與襯墊43之間，也就是說，該襯墊 43係黏附於熔爐41使得其間之接觸區域盡可能地小，特 別地，該襯塾43只與該熔爐41之內面之底部表面接觸且 該襯塾43具有一相對著該熔爐內側表面之空間。 於該離子電鍍裝置中，該材料200係如下述而蒸發。 導入熔爐41之電漿束對著襯墊43及或該熔爐41放電，當 放霄發生於該襯墊43時，該材料200會在瞬間快速地加 熱，瞬間加熱之該材料開始蒸發，之後，該材料200灌 饋由焦耳熱量所造成之熱量予以蒸發。 -9 - 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、τ 585931 A7 B7 五、發明説明（《） 此癍，因為大部分之襯塾43係與該熔爐41之內側表面 隔開，故材料200不會瞬間冷卻。 當容納於襯墾43中之材料200在電漿束之放電期間數 最減少時，該放電會移轉至襯墊43,因此，不會中斷該 材料200之加熱。 此外，因為襯墊43具有導電性，故諸如SiO, Si 〇2, MgO, ZnO,或A 1203之電氣絕緣材料可使用作該材料 200 〇 轉藺第3匾，熔爐41’係用於第一實施例之離子電鍍 裝置之熔爐41之修飾例，該熔爐41’具有一凹部41a, — 中空之空間41b,該一肋間41c形成於其內面之底部表面之 上，該襯塾43係安装在該肋間41c之上。 因此，該襯墾43部分地接觸該熔爐41»M保持低的熱 傳導性於該熔爐41’與該襯墊43之間，也就是說，該襯 II 43M小於第2圓之接觴區域與該熔爐41接觸，所K , 材料200不會瞬間冷卻。 請 先 閱 讀 背 面' 之 注 意 事 項 再 填 寫 本 頁 置 裝 鍍 電 子 離 之 例 施 實二 第 明 發 本 據 根 _ 例 4 獻第 實照二 # m 經潢部中决標準局爲T-消贽合作社印來 第 於 Jn 3 類塾 相襯 及 1X 4 爐 熔 了 除 置 裝 鍍 電 子 離 之 例 豳 實 墊 襯 該 及 1X 4 爐 熔 該 於 異 相 地 別 分 係 上 狀 形 在 之S , 傳 43熱 墊的 襯低 該持 於保 ofM 20觭 料接材厂 tt 入 餵 地 縝 持 可 置 裝 ! 3 鍍 4 電墊 子襯 雛該 該 ， 內 爐 熔 該 與 地 分 部 直 il 0 之 圖 4 第 於 伸^ 一 墊形 襯之 該筒 與圓 ltf有 4 具 爐Γ 熔41 該爐 於熔 性該 導 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 58593l· A7 ____________ '發明説明（9 ) (請先閱讀背面之注意事項再填寫本頁) 方向中之貫穿孔4 ^係形成於該熔爐41”之中，一凹部 4la”形成於該熔爐41”之頂部端末之上，一中空之空間 41»>”係形成於該熔爐41”之內部遇邊之中，該圓形之中 $之空間41b”連接於管線71c及71bM用於冷卻水之循環。 該_肋陽極42係定位Μ留下一固定空間包圃該熔爐41” t外部《邊，該輔肋陽極42具有圓形之上方盒髓423a, _形之下方盒形423b,及圖形之永久磁鐵置放於上方與 下方盒體423a與423b間之內部空間之中，在該上方與下 方倉體42 3a與423b間之內部空間係連接於一管線7ia及 管線71c Μ用於冷卻水之循環。 該轤肋陽極42係藉由支撐部分500來支撐，該熔爐41” 係透過其凸緣及該輔肋陽極42之下方盒體423b之絕緣板 82來懸吊著，一小的空間留在該熔爐41”與該輔助陽極 42之內側表面之間。 該襯釐43具有圓筒形狀且係置放於該熔爐41”之中，一 空間係形成於該襯垫43’與該凹部41a”之內部表面之間。 經淆部中决標準局员J-消贽合作社印繁 該雛子電鍍裝置具有一材料餵入機構36,使用於連鱭 地餵入材料200,於該襯塾43,之内，該材料餵入櫬構36 含有一推桿35, —具有頂部平台部分36b之螺稈36a, — 嫘母部分36d, —扣鐽齒36e, —驅動鐽條36f, W及一 _承部分38。 該輸承部分38係黏附於真空室10之底部，該袖承部分 38支撺其中之嫘母部分36d使得該螺母部分36d可旋轉於 一垂育輪之上，該扣鍵齒36e係附著於該螺母部分36d之 -11- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 3 9 5 8 5 五 經消部中次#準局負.T消费合竹$印氣 A7 ^______2i____ 、發明説明（、。） 薄璣表面，該驅動餺條36f係與該扣鐽齒36e與一馬達（ 未鼸示）_合，該嫘桿36a係旋入於該嫘母部分36d之中， 目常該嫘母部分36 dM —方向及其他旋轉方向旋轉時具 有滑上及滑下之能力，該螺桿363滑上及滑下但不旋轉， 該頂部平台部分36b係與螺桿36a積體地形成，該推稈35 係黏附於該頂部平台部分36b,該頂部平台部分36b及該 推桿35分別地具有相互連接之中空部分，該頂部平台部 分36b及該推稈35之中空部分_於可撓管線37及39用W 镛環冷卻水。該等可撓管線37及39可與頂部平台部36b 及推桿35—起上移及下移。 镥騮動鐽條36f及扣鐽齒36e由馬達鼷動時，嫘母部分 36d會旋轉，該蟝母部分36d之旋轉會轉換成嫘桿36a,頂 部平台部分36b,及推稈35之向上及向下動時，因此，置 故於該推稈35上之材料200*會在襯墊43中向上及向下移 動。具有上述之結構，該離子電鍍裝置具備有餵入材料 200’於襯塾43’中之能力，而無需打開該真空室。 於該離子電鍍裝置中，該襯墊43’部分地與該熔爐41” 接觴Μ保持低的熱傳導性於該熔爐41”與該襯塱43·之間 。也就是說，因為該熔爐41”具有凹部41 a'，故該襯墊 43 小的接觸區域與該熔爐41”接觴。 -12- 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)It consists of nitride (BN), molybdenum (Mo), ftl (W), sharp- (Ta), and silicon I (S i C). The lining 43 is partially in contact with the solution 41 and maintains low thermal conductivity and electrical conductivity between the furnace 41 and the gasket 43. That is, the gasket 43 is adhered to the furnace 41 so that the contact area therebetween is as much as possible. The floor space is small, in particular, the liner 43 only contacts the bottom surface of the inner surface of the furnace 41 and the liner 43 has a space opposite to the inner surface of the furnace. In the ion plating apparatus, the material 200 is evaporated as described below. The plasma beam introduced into the furnace 41 discharges against the pad 43 and / or the furnace 41. When the blast occurs on the pad 43, the material 200 will be rapidly heated instantaneously, and the material heated instantly will begin to evaporate. The material 200 is fed with heat caused by Joule heat to evaporate. -9-This paper size applies Chinese National Standard (CNS) Λ4 specification (210X297 mm) (Please read the precautions on the back before filling this page), τ 585931 A7 B7 V. Description of the invention (") Part of the lining 43 is separated from the inner surface of the furnace 41, so the material 200 does not cool instantly. When the number of discharge periods of the material 200 contained in the lining 43 is minimized during the plasma beam discharge, the discharge is transferred to the pad 43 and therefore, the heating of the material 200 is not interrupted. In addition, because the gasket 43 is electrically conductive, an electrically insulating material such as SiO, Si 〇2, MgO, ZnO, or A 1203 can be used as the third plaque for the material 200 〇, the furnace 41 'is used for the first A modified example of the furnace 41 of the embodiment of the ion plating apparatus, the furnace 41 'has a concave portion 41a, a hollow space 41b, the rib space 41c is formed on the bottom surface of the inner surface thereof, and the lining 43 is installed on This intercostal 41c is above. Therefore, the liner 43 partially contacts the furnace 41 »M to maintain a low thermal conductivity between the furnace 41 'and the liner 43, that is, the liner II 43M is smaller than the junction area of the second circle and the When the furnace 41 is in contact, the material 200 will not be instantly cooled. Please read the “Notes on the back side” before filling out this page. Example of mounting plated electro-ionization. Example 2 The first issue of the document _ Example 4 见 第 实 照 二 # m The Ministry of Economic Affairs and the Ministry of Standards and Decision for T-elimination The cooperative printed on the example of Jn 3 type phase contrast and 1X 4 furnace melting and removing the plating and ionization. Examples of solid lining and 1X 4 furnace melting should be in the shape of S in different phases. 43 The thermal pad lining is low to be maintained in the 20 of the material. The material feeding plant can be installed into the ground! 3 plating 4 electric pad linings should be, the inner furnace melting and the ground branch straight il 0 Figure 4 The first one has a pad-shaped liner with 4 furnaces and a round ltf. There are 4 furnaces. Γ 41 The furnace is fusible. The size of this guide applies to the Chinese National Standard (CNS) A4 (210X 297 mm). 58593l · A7 ____________ 'Invention (9) (Please read the precautions on the back before filling this page) The through hole 4 in the direction is formed in the furnace 41 ", and a recess 4la" is formed in the top end of the furnace 41 " Above, a hollow space 41 »>" system It is formed in the inside edge of the furnace 41 ", and the space 41b" in the circle is connected to the lines 71c and 71bM for the circulation of cooling water. The ribbed anode 42 is positioned to leave a fixed space to cover the furnace 41 ”t. The outer side, the auxiliary ribbed anode 42 has a round upper box pith 423a, a lower box-shaped 423b, and a permanent figure. The magnet is placed in the internal space between the upper and lower boxes 423a and 423b, and the internal space between the upper and lower bins 42 3a and 423b is connected to a pipeline 7ia and a pipeline 71c for the circulation of cooling water. The ribbed anode 42 is supported by the support portion 500, and the furnace 41 "is suspended through its flange and the insulating plate 82 of the box body 423b below the auxiliary rib anode 42, leaving a small space in Between the furnace 41 "and the inner surface of the auxiliary anode 42. The liner 43 has a cylindrical shape and is placed in the furnace 41", and a space is formed between the gasket 43 'and the recess 41a " Between the internal surfaces of the Ministry of Confusion, J-Consumer Cooperative Co., Ltd. The fan plating device has a material feeding mechanism 36 for feeding the material 200 in a row, and the lining 43 Inside, the material is fed into the frame 36 containing a putter 35, a screw with a top platform portion 36b 36a, — female part 36d, — sprocket teeth 36e, — driving purlin 36f, W and a bearing part 38. The bearing part 38 is adhered to the bottom of the vacuum chamber 10, and the sleeve part 38 supports it. The female part 36d allows the nut part 36d to be rotated on a vertical breeding wheel. The button tooth 36e is attached to the nut part 36d-11.-This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) 3 9 5 8 5 Wujing Consumer Department Zhongci # quasi-offset.T Consumption Hezhu $ 印 气 A7 ^ ______ 2i____, invention description (,.) The surface of the thin cymbal, the drive bar 36f is connected with the buckle The tooth 36e is engaged with a motor (not shown). The yoke 36a is screwed into the yoke portion 36d. The yoke portion 36 dM is usually slipped up and down when rotating in the direction and other directions of rotation. The top platform portion 36b is formed integrally with the screw 36a, and the push rod 35 is adhered to the top platform portion 36b, the top platform portion 36b and the The push rod 35 has a hollow portion connected to each other, the top platform portion 36b and the push rod 35 respectively. Hollow part_ Use W ring to cool water on the flexible lines 37 and 39. These flexible lines 37 and 39 can move up and down with the top platform part 36b and the push rod 35. When the buckle tooth 36e is moved by the motor, the female part 36d will rotate, and the rotation of the female part 36d will be converted into the rod 36a, the top platform part 36b, and the upward and downward movement of the push rod 35. The material 200 * placed on the pushing stalk 35 will move upward and downward in the pad 43. With the structure described above, the ion plating apparatus has the ability to feed the material 200 'into the liner 43' without opening the vacuum chamber. In the ion plating apparatus, the pad 43 'is partially connected to the furnace 41 "to maintain a low thermal conductivity between the furnace 41" and the lining 43 ·. That is, because the furnace 41 "has a recessed portion 41a ', the small contact area of the pad 43 is in contact with the furnace 41". -12- This paper size applies Chinese National Standard (CNS) Λ4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)
經濟部中决標率局员,τ消费合作社印象 585931 A7 B7 五、發明説明（"） 符虢參考說明 1 0 ....真空室 1 0 a ...氣體入口 1 0 b ...氣體排氣出口 12____導引單元 20 ____電漿束產生器 21 ____絕緣管 22 ____中空之圓筒 23 ____管線 24....圓形板 25——輸送部 26 ____載體氣體入口 27 ____第一中間電極 2 7 a ...永久磁鐵 28 ____第二中間電極 28a ...線圈 31——操縱線圈 3 5 ....推稈 36——材料餵入機構 3 6 a ...媒桿 36b ...頂部平台部分 3 6 d ...嫘母部分 3 6 e ...扣鐽齒 3 6 f ...驅動鐽條 -13- 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Member of the Ministry of Economic Affairs, Bureau of Final Bid Rate, Impression of Tau Consumer Cooperatives 585931 A7 B7 V. Description of the invention (") Fu reference description 1 0 .... Vacuum chamber 1 0 a ... Gas inlet 1 0 b ... Gas exhaust outlet 12____Guide unit 20 ____ Plasma beam generator 21 ____Insulating tube 22 ____Hollow cylinder 23 ____Line 24 .... Circular plate 25-Conveying section 26 ____Carrier Gas inlet 27 ____ First intermediate electrode 2 7 a ... Permanent magnet 28 ____ Second intermediate electrode 28 a ... Coil 31-Control coil 3 5 .... Pushing stalk 36-Material feeding mechanism 3 6 a ... media rod 36b ... top platform part 3 6 d ... female part 3 6 e ... sprocket teeth 3 6 f ... driving purse-13- This paper size applies to China Standard (CNS) Λ4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)
585931 經淆部中决標率局貞_τ消费合作社印來 A7 B7五、發明説明（P ) 3 7——可撓管線 38 ....軸承部分 3 9——可撓管線 4 1 .,..熔鱸 4 1 a ...凹部 4 lb...中空之空間 4 1 c ...肋間 42——輔肋陽極 421 ...圓形永久磁鐵 422 ...線圈 423a ··圓形之上方盒體 423b·,画形之下方盒體 4 1 ’ 熔爐 4 1 ” 熔爐 4 1 a ” .凹部 4 1 b ” .中空之空間 4 1 c ” .貫穿孔 43____襯塾 43 f ...襯墊 50——支撐板 50a ...支撐部分 61——蓮送裝置 71a ...管線 7 1 b ...管線 -14- (請先閱讀背面之注意事項再填寫本頁)585931 A7 B7 printed by the Ministry of Confusion in the final bid rate _ τ Consumer Cooperative Fifth, invention description (P) 3 7-flexible line 38 .... bearing part 3 9-flexible line 4 1., .. molten bass 4 1 a ... recess 4 lb ... hollow space 4 1 c ... inter-rib 42-auxiliary rib anode 421 ... round permanent magnet 422 ... coil 423a · round The upper box 423b ·, the lower box 4 1 ′ furnace 4 1 ”furnace 4 1 a”. Recess 4 1 b ”. Hollow space 4 1 c”. Through hole 43____lining 43 f .. .Paper 50-support plate 50a ... support part 61-lotus feeding device 71a ... line 7 1 b ... line -14- (Please read the precautions on the back before filling this page)
本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X 297公釐） 經淆部中决標準^貝工消费合作社印繁 585931 A7 B7 五、發明説明（〇 ) 7 1 c ...管線 8 1 ....絕緣板 82____絕緣板 90——可變電源 1 0 0 ...基板 200 ...材料 200、.材料 300 ...電漿束 -15- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁)This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X 297 mm). The standard determined by the Ministry of Confusion ^ Beigong Consumer Cooperatives Co., Ltd. Yin Fan 585931 A7 B7 V. Description of the invention (〇) 7 1 c ... Pipeline 8 1 .... Insulation board 82____ Insulation board 90-Variable power supply 1 0 0 ... Substrate 200 ... Material 200, ... Material 300 ... Plasma beam -15- This paper size applies to Chinese national standards ( CNS) A4 size (210X 297mm) (Please read the precautions on the back before filling this page)