TW583756B - Manufacturing method of glass micro fluid chip - Google Patents

Manufacturing method of glass micro fluid chip Download PDF

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Publication number
TW583756B
TW583756B TW91123979A TW91123979A TW583756B TW 583756 B TW583756 B TW 583756B TW 91123979 A TW91123979 A TW 91123979A TW 91123979 A TW91123979 A TW 91123979A TW 583756 B TW583756 B TW 583756B
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glass
wafer
manufacturing
patent application
scope
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TW91123979A
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Chinese (zh)
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Gwo-Bin Lee
Che-Hsin Lin
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Univ Nat Cheng Kung
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Abstract

This invention utilizes micro electro-mechanical manufacturing technique to provide a manufacturing method of glass micro fluid chip, which comprises using a photoresist as a glass etching mask to quickly define etching pattern by a standard lithographic process, providing a special baking process to reduce residual stress between the photoresist layer and the glass substrate, and finally using a hot melt bonding method to encapsulate the glass chip, which does not require complicated temperature ramping up and down process and can completely bond the glass chip with material of the same property. This invented process technique can be applied to manufacture various types of micro fluid chips using glass as the substrate.

Description

583756 _案號91123979_年月曰 修正_ 五、發明說明(1) 【發明之技術領域】 本發明係提供一種玻璃晶片製程方法,用於在玻璃基 板中製作各式微流體晶片,其中包含三大部份,第一:發 展利用光阻作為玻璃濕式蝕刻之蝕刻罩幕;第二:玻璃蝕 刻技術之開發及第三:玻璃接合技術之發展,其可應用於 各式生物晶片、整合型微流體晶片、微型化學反應晶片… 等之開發。 【發明背景】 近年來,由於微小化分析裝置本身輕薄短小、反應快 速以及消耗樣本少等優勢,使得它在生物醫學和化學分析 等研究領域裡被廣泛地研究。在分析裝置的製程上也趨於 更多樣化,各種不同的材質被納入研究的範圍,如玻璃、 石英、矽、PDMS、高分子材料等,其中,以玻璃為基材的 微流體晶片最具有發展潛力。玻璃這種材質,自多年以前 就被廣泛的使用在多種實驗容器、設備的製造上,因此關 於玻璃的種種化學及物理性質,大家均相當熟悉,若要將 研究平台轉換到微流體的尺度上所遭遇到的困難比其他材 質將能夠降到最低。而且玻璃對於機械應力的承受度、化 學物質的抵抗能力、電的絕緣性以及光學穿透波長的範圍 等性質都遠遠高過其他的材質。雖然以玻璃為基材的檢測 裝置有以上許多的優點,不過在製程上卻常遭遇到一些困 難,限制了玻璃基材的使用。 現行利用溼式蝕刻在玻璃基材上製作微管道的方法, 多為利用石英或硼玻璃為製作基材,此兩種材料雖具有良 好之光學及化學性質,但其價格較為昂貴,且蝕刻速率緩583756 _Case No. 91123979_ Modification of the Year and Month_ V. Description of the Invention (1) [Technical Field of the Invention] The present invention provides a method for manufacturing a glass wafer, which is used to fabricate various microfluidic wafers in a glass substrate. Most of them, the first: development of photoresist as an etching mask for glass wet etching; the second: development of glass etching technology and the third: development of glass bonding technology, which can be applied to various types of biochips, integrated types Microfluidic wafers, miniature chemical reaction wafers, etc. [Background of the Invention] In recent years, the miniaturized analysis device has been widely studied in the fields of biomedical and chemical analysis due to its advantages such as lightness, shortness, short response time, and few samples consumed. The analysis device manufacturing process also tends to be more diversified, and various materials have been included in the research scope, such as glass, quartz, silicon, PDMS, and polymer materials. Among them, glass-based microfluidic wafers Has development potential. The glass material has been widely used in the manufacture of a variety of experimental containers and equipment since many years ago, so everyone is familiar with the various chemical and physical properties of glass. If you want to transform the research platform to the scale of microfluidics The difficulties encountered will be minimized compared to other materials. Moreover, the properties of glass against mechanical stress, chemical resistance, electrical insulation, and optical transmission wavelength range are much higher than other materials. Although the glass-based detection device has many of the above advantages, it often encounters some difficulties in the manufacturing process, which limits the use of glass substrates. The current methods for making micro-channels on glass substrates by wet etching are mostly made of quartz or boron glass as substrates. Although these two materials have good optical and chemical properties, they are more expensive and have an etching rate. slow

583756 _案號91123979_年月曰 修正_ 五、發明說明(2) 慢,必須長時間的蝕刻方能達到所需之管道深度。因此, 利用石英或硼玻璃做為玻璃晶片之基材,必須製作一可以 長時間抵擔#刻液侵敍的#刻罩幕(e t c h m a s k )。傳統製 程上,必須使用薄膜沈積技術在玻璃的表面鍍上一層金屬 薄膜做為蝕刻罩幕。因此,必須使用到真空鍍膜製程,該 製程為一昂貴且費時的程序,並不適合快速、低成本的大 量生產。583756 _ Case No. 91123979_ Year Month Revision _ V. Description of the invention (2) Slow, it must be etched for a long time to reach the required pipe depth. Therefore, using quartz or boron glass as the base material of the glass wafer, it is necessary to make a #etching mask (e t c h m a sk) that can bear the #etch liquid invasion for a long time. Traditionally, a thin film deposition technique must be used to coat the glass surface with a thin metal film as an etch mask. Therefore, a vacuum coating process must be used, which is an expensive and time-consuming process, and is not suitable for mass production that is fast and low cost.

有鑑於此,許多人提出以高分子聚合物的薄膜做為玻 璃#刻罩幕的想法。根據M a t h i e s發表的文獻指出,利用 型號Ship ley 1 4 0 0 - 3 1的正光阻塗布在玻璃基材上當作蝕 刻罩幕,可以在餘刻緩衝液(b u f f e r e d ο X i d e e t c h a n t,B Ο E )中承受1 5分鐘的I虫刻,約可#刻出大約8 // m 的深度。另外,在Stjernstrom提出的報告中,利用 S h i p 1 e y 1 8 1 3正光阻做為#刻罩幕,在氫氟酸的緩衝液中 進行玻璃蝕刻。為了使得蝕刻罩幕在蝕刻液中不致太早剝 落,這兩篇研究均延長了光阻塗布後軟烤的時間,其烘烤 過程達8 0分鐘以上,但其蝕刻罩幕僅能在蝕刻液中抵擋十 幾分鐘,因此無法獲得較深之微管道結構。In view of this, many people have proposed the idea of using a thin film of a high-molecular polymer as a cover glass. According to the literature published by Mathies, the positive photoresist of the model Shipley 1 400 0-3 1 is coated on a glass substrate as an etching mask, which can be used in buffered ο X ideetchant (B 0 E). After 15 minutes of I insect engraving, you can #engraved a depth of about 8 // m. In addition, in the report submitted by Stjernstrom, S h i p 1 e y 1 8 1 3 positive photoresist was used as the #etching mask, and the glass was etched in a buffer solution of hydrofluoric acid. In order to prevent the etching mask from peeling off prematurely in the etching solution, both of these studies have extended the soft baking time after photoresist coating. The baking process is more than 80 minutes, but the etching mask can only be used in the etching solution. Medium resists for more than ten minutes, so deeper micro-pipe structures cannot be obtained.

對於微流體晶片來說,表面的粗糙度以及蝕刻後的幾 何形狀將會大大地影響晶片的效能。在Delahaye 等人的 文獻中指出,對於成分較複雜的玻璃(如鈉玻璃)在酸性 蝕刻液中蝕刻後,表面會非常粗糙,並且有白色沉澱物附 著在表面上。該沉澱物乃在蝕刻過程中產生,並且附著在 玻璃的表面上,嚴重影響蝕刻品質而造成玻璃蝕刻後表面 粗米造。For microfluidic wafers, the roughness of the surface and the geometry after etching will greatly affect the performance of the wafer. In the literature of Delahaye et al., It is pointed out that for glass with a more complex composition (such as soda glass) after etching in an acidic etchant, the surface will be very rough, and white precipitates will adhere to the surface. The precipitate is generated during the etching process and adheres to the surface of the glass, which seriously affects the quality of the etching and causes the surface of the glass to be rough after being etched.

第5頁 583756 _案號91123979_年月曰 修正_ 五、發明說明(3) 在晶片接合技術上,低溫的接合方式已經被廣泛地使 用在玻璃接合的應用上,如氫酸接合法或黏著層接合 法…等。利用氫氟酸接合法進行玻璃接合,勢必對微管道 表面的粗糙度產生不良的影響,並會改變蝕刻後之管道寬 度,而且其接合強度也不高,無法承受太大的外加壓力, 使得應用的範圍受到限制。再者利用氫氟酸進行玻璃接 合,必須對玻璃基板進行嚴格之清洗程序,若有任何微小 粒子附著於玻璃基板上,將使得接合失敗。因此該法之結 合成功率不高。若利用黏著層進行玻璃接合,同樣存在接 合強度不高之問題。更嚴重的是,利用黏著層接合往往會 造成微管道之阻塞,因此失敗率極高。 傳統之高溫熔融的接合方式,提供了極高的接合強度 以及沒有任何接合物質的殘留。因此,高溫熔融的接合方 式被廣泛地應用在玻璃基材的接合上。一般而言,含硼玻 璃融熔接合的溫度大約在6 5 0 °C〜8 0 0 °C之間,而持溫的時 間在6小時至8小時左右,而石英則必須高達1 3 0 0 °C以上, 其中並不包括升溫及降溫冷卻的時間。換言之,熔融接合 的方式是個相當耗時的製程。 【發明概述】 有鑑於習知玻璃晶片製程之缺點與弊端,本發明係提 供一種玻璃微流體晶片之製程方法,至少包含下列程序: 提供一玻璃基材作為晶片下板;塗佈光阻於前述晶片下板 上;烘烤程序;曝光程序;光阻顯影;玻璃蝕刻程序;剝 除光阻程序;提供另一玻璃基材作為晶片上板;於前述晶 片上板上鑽孔;及以熱熔融方式接合前述晶片上板及下Page 558756 _Case No. 91123979_ Years and Months Revision_ V. Description of the Invention (3) In wafer bonding technology, low-temperature bonding methods have been widely used in glass bonding applications, such as hydrogen-acid bonding or adhesion Layer bonding method ... etc. Glass bonding using hydrofluoric acid bonding method will inevitably have an adverse effect on the roughness of the surface of the micro-pipe, and will change the width of the pipe after etching, and its bonding strength is not high, and it cannot bear too much external pressure, making it suitable for applications. The scope is limited. Furthermore, glass bonding using hydrofluoric acid requires a strict cleaning procedure for the glass substrate. If any small particles adhere to the glass substrate, the bonding will fail. Therefore, the combined power of this method is not high. If glass bonding is performed using an adhesive layer, there is also a problem that the bonding strength is not high. What's more serious is that the use of adhesive layer bonding often causes blockage of micro-channels, so the failure rate is extremely high. The traditional high-temperature fusion bonding method provides extremely high bonding strength and no residue of bonding materials. Therefore, a high-temperature fusion bonding method is widely used for bonding glass substrates. Generally speaking, the temperature of fusion-bonding of boron-containing glass is about 6 0 ° C ~ 80 0 ° C, and the holding time is about 6 hours to 8 hours, while quartz must be as high as 1 3 0 0 Above ° C, it does not include heating and cooling time. In other words, fusion bonding is a time-consuming process. [Summary of the Invention] In view of the shortcomings and disadvantages of the conventional glass wafer process, the present invention provides a method for manufacturing a glass microfluidic wafer, which at least includes the following procedures: Provide a glass substrate as the lower plate of the wafer; Bottom wafer; baking process; exposure process; photoresist development; glass etching process; stripping photoresist process; providing another glass substrate as the wafer upper plate; drilling holes on the wafer upper plate; and thermal melting Way to join the upper and lower wafers

583756 _案號91123979_年月曰 修正_ 五、發明說明(4) 板。 前述之製程方法進一步包含一玻璃基板清洗之程序, 係實施於接合晶片上板及下板之程序前。 前述玻璃基材可為鈉玻璃、硼玻璃、鉛玻璃、P Y R E X 玻璃或石英等各種玻璃材質均可,其中較佳係為鈉玻璃。 前述之烘烤程序包含一軟烤程序(較佳溫度為9 0 - 1 0 0 °C ),係實施於塗佈光阻於晶片上板後之程序,及一硬烤 程序(較佳溫度為1 0 0 - 1 5 0 °C ),係實施於光阻顯影後之 程序。 前述之光阻可為正型或負型光阻劑,其中較佳係為 A Z 4 6 2 0之光阻劑,前述光阻係可以標準光刻程序定義蝕刻 圖案。 前述利用光阻作為玻璃蝕刻罩幕係可免除昂貴複雜之 金屬鍍膜程序,並獲得良好之蝕刻結果。 前述玻璃蝕刻技術,係利用化學方法將蝕刻過程所產 生的沈澱物去除,可得到表面平整度良好之蝕刻結構,並 增加蝕刻速率達每分鐘一微米,較石英及硼玻璃之蝕刻速 率快數十倍。 前述玻璃接合技術,進一步係可利用基板作為接合時 之墊片,以提供良好之接合平整度。該接合技術配合控制 升降溫速率及持溫時間,使玻璃得以在六小時之内完成接 合,並獲得極佳之接合強度。 前述基板材質例如:陶瓷基板、不鏽鋼板、碳化矽 板、碳化鎢板、氧化鋁板、氧化锆板…等任何耐熱材質均 可,其中較佳係為陶瓷基板。583756 _ Case No. 91123979_ Year Month Amendment _ V. Description of the invention (4) Board. The aforementioned manufacturing method further includes a procedure for cleaning the glass substrate, which is performed before the procedure for bonding the upper plate and the lower plate of the wafer. The glass substrate may be various glass materials such as soda glass, boro glass, lead glass, P Y R E X glass, or quartz. Among them, sodium glass is preferred. The aforementioned baking process includes a soft baking process (preferably at 90-100 ° C), which is a process implemented after coating a photoresist on a wafer, and a hard baking process (preferably at 1 0 0-1 50 ° C), which is the procedure after photoresist development. The aforementioned photoresist may be a positive or negative photoresist, and among them, a photoresist of A Z 4 6 2 0 is preferred, and the aforementioned photoresist may be defined by an etching pattern using a standard photolithography process. The aforementioned use of photoresist as a glass etching mask can eliminate expensive and complicated metal coating procedures and obtain good etching results. The aforementioned glass etching technology uses chemical methods to remove the precipitates generated during the etching process, and can obtain an etching structure with good surface flatness, and increase the etching rate to one micron per minute, which is dozens of times faster than the etching rate of quartz and boron glass. Times. The aforementioned glass bonding technology can further use a substrate as a spacer during bonding to provide good bonding flatness. This joining technology cooperates with the control of the heating and cooling rate and temperature holding time, so that the glass can be joined within six hours and obtain excellent joint strength. The aforementioned substrate material may be, for example, a ceramic substrate, a stainless steel plate, a silicon carbide plate, a tungsten carbide plate, an alumina plate, a zirconia plate, etc., and any heat-resistant material may be used. Among them, a ceramic substrate is preferred.

583756 _案號91123979_年月曰 修正_ 五、發明說明(5) 本發明係提供一種製作成本低廉、製作時程短、可應 用於玻璃基材上卻又不失可靠性之製程技術,用於製成各 式微流體晶片。 【主要元件符號對照說明】 1 — 晶片下板 2 —— 光阻層 3 ---光罩 4 - - - 微管道 5 --- 晶片上板 6 --- 孑L洞 7 --- 水膜 8 ——光阻蝕刻罩幕 9 --- 玻璃基材 1 0 -- -微流體晶片 1 1 --- 十字型毛細管電泳晶片 1 2 --- 微流體細胞計數晶片 13--- 光纖結構 1 4 --- 連續進樣電泳晶片 1 5 --- 基板 【發明之詳細說明】 如圖一所示,本發明所提供之玻璃微流體晶片之製程 方法,主要包含下列程序:首先如圖一 (A )所示,提供 一玻璃基材作為晶片下板1,並於其上塗佈一光阻層2進行 軟烤;接下來如圖一(B )所示,利用一設計之光罩3進行 曝光;之後如圖一(C )所示,進行光阻顯影並將顯影後583756 _ Case No. 91123979_ Year and month amendment_ V. Description of the invention (5) The present invention provides a process technology with low production cost, short production time, and can be applied to glass substrates without losing reliability. To make a variety of microfluidic wafers. [Comparison of the main component symbols] 1 — Lower plate of the wafer 2 — Photoresist layer 3 --- Photomask 4---Micropipe 5 --- Upper plate of the wafer 6 --- 孑 L hole 7 --- Water film 8 ——Photoresist etching mask 9 --- Glass substrate 1 0 --- Microfluidic wafer 1 1 --- Cross-shaped capillary electrophoresis wafer 1 2 --- Microfluidic cell counting wafer 13 --- Optical fiber structure 1 4 --- Continuous injection electrophoresis wafer 1 5 --- Substrate [Detailed description of the invention] As shown in FIG. 1, the manufacturing method of the glass microfluidic wafer provided by the present invention mainly includes the following procedures: First, as shown in FIG. 1 ( As shown in FIG. 1), a glass substrate is provided as the lower plate 1 of the wafer, and a photoresist layer 2 is coated thereon for soft baking; as shown in FIG. 1 (B), a designed photomask 3 is used for Exposure; after that, as shown in FIG.

583756 _案號91123979_年月曰 修正_ 五、發明說明(6) 之晶片下板1進行光阻之硬烤,以增加光阻在蝕刻緩衝液 中所能抵擋蝕刻液侵蝕之時間;之後如圖一 (D )所示, 進行玻璃蝕刻之程序以製成預定之微管道4 ;接著如圖一 (E )所示,將殘留之光阻層2剝除,即完成晶片下板1之 製程;接下來,如圖一 (F )所示,提供另一玻璃基材作 為晶片上板5並於預定位置鑽孔以形成孔洞6 ;之後如圖一 (G)所不’先將晶片上板5及晶片下板1以化學方法清洗 玻璃表面之沉澱物及雜質,之後將晶片上板5及下板1對 位,再於兩片晶片之間滴上少許去離子水形成水膜7,使 兩片晶片之間暫時黏合,最後,如圖一 (Η )所示,以熱 熔融方式接合前述晶片上板5及下板1 ,即可完成該微流體 晶片1 0之製程。 前述圖一 (Η)程序中,係可進一步藉由兩片基板15 作為接合時之墊片,亦即將晶片上板5及晶片下板1固定於 兩片基板1 5之間,如圖二所示,可以提供一平整之表面以 及熱熔融接合時所需之微小壓合力量。前述基板1 5之材質 例如:陶瓷基板、不鏽鋼板、碳化矽板、碳化鎢板、氧化 鋁板、氧化锆板…等任何耐熱材質均可,其中陶瓷基板可 耐高溫、不變形之特性,因此作為玻璃高溫接合之墊片最 佳。當然,圖一 (Η )之程序中亦可不使用任何基材作為 墊片,只將上、下玻璃板置於高溫爐中亦可完成接合程 序。 本發明之製程方法發展出一種快速、可靠的光阻製 程,適當利用光阻附著層(adhesive layer)以提高光阻 之附著力,並利用一改良之烘烤程序,使得留在玻璃基材583756 _Case No. 91123979_ Modification of the month of the year _ V. Description of the invention (6) The lower plate 1 of the wafer is hard baked to increase the time that the photoresist can resist the erosion of the etching solution in the etching buffer; As shown in FIG. 1 (D), a glass etching process is performed to make a predetermined microchannel 4. Then, as shown in FIG. 1 (E), the remaining photoresist layer 2 is stripped to complete the process of manufacturing the lower plate 1 of the wafer. Next, as shown in FIG. 1 (F), another glass substrate is provided as the wafer upper plate 5 and drilled at a predetermined position to form a hole 6; after that, as shown in FIG. 1 (G), the wafer is first plated 5 and the lower plate 1 of the wafer chemically clean the precipitates and impurities on the glass surface, and then align the upper plate 5 and the lower plate 1 of the wafer, and then drip a little deionized water between the two wafers to form a water film 7 so that The two wafers are temporarily bonded, and finally, as shown in FIG. 1 (i), the upper and lower plates 5 and 1 of the wafer are joined by thermal fusion to complete the process of the microfluidic wafer 10. In the procedure of FIG. 1 (i), the two substrates 15 can be used as spacers for bonding, that is, the upper wafer plate 5 and the lower wafer plate 1 are fixed between the two substrates 15 as shown in FIG. It can provide a flat surface and the small pressing force required for thermal fusion bonding. The material of the aforementioned substrate 15 is, for example, a ceramic substrate, a stainless steel plate, a silicon carbide plate, a tungsten carbide plate, an alumina plate, a zirconia plate, etc. Any heat-resistant material can be used. Among them, the ceramic substrate can withstand high temperature and does not deform. Glass gaskets are best for high temperature bonding. Of course, the procedure in Fig. 1 (Η) can also be used without using any substrate as a gasket, and the joining process can be completed by only placing the upper and lower glass plates in a high-temperature furnace. The manufacturing method of the present invention develops a fast and reliable photoresist process, which appropriately utilizes an adhesive layer to improve the photoresist adhesion, and utilizes an improved baking process to make it stay on the glass substrate.

583756 _案號91123979_年月曰 修正_ 五、發明說明(7) 以及蝕刻罩幕之間的殘留應力得以降低,而延長光阻在蝕 刻液中之抵擋時間。根據實驗資料指出,本發明使用之 A Z 4 6 2 0的光阻,經過本製程所發展之烘烤程序,可以在具 有超音波震盪的情況下,於蝕刻緩衝液中抵擋超過7 0分鐘 以上之時間,並可獲得超過6 0微米以上之蝕刻深度。 另外,本發明提供一個全新的蝕刻方式,利用超音波 震盪以及獨創之沈澱物去除技術,可以大幅增加蝕刻速 率,並有效地改善触刻後表面粗链度的問題,而得到一表 面平滑之钱刻表面。583756 _Case No. 91123979_Year Month Revision_ V. Description of the Invention (7) The residual stress between the etching mask and the mask can be reduced, and the resist time of the photoresist in the etching solution can be extended. According to experimental data, the photoresist of AZ 4 6 2 0 used in the present invention can withstand ultrasonic vibration in the etching buffer for more than 70 minutes after the baking process developed by this process. Time, and can achieve an etching depth of more than 60 microns. In addition, the present invention provides a brand-new etching method. Using ultrasonic vibration and original sediment removal technology, the etching rate can be greatly increased, and the problem of rough chain degree on the surface after touching can be effectively improved to obtain a smooth surface. Carved surface.

此外,在本發明所發展的製程中,提出一個新的容融 接合的步驟,不僅能夠在六小時之内完成接合之升降溫程 序,縮短接合所花費的時間,並可獲得一快速、可靠且強 度極佳之接合結果。 本發明之一種玻璃微流體晶片之製程方法,其優點及 過程將透過下列實施例作進一步之說明。 【實施例一】 材料·一般市售的顯微鏡用載玻片或各式表面抛光處 理過的鈉玻璃,作為本發明之玻璃基材。玻璃基材在使用 前必須經過在4 0 0 °C的高溫中烘烤4個小時的退火程序,以 除去殘留在玻璃基材中的應力。In addition, in the process developed by the present invention, a new step of fusion bonding is proposed, which can not only complete the heating and cooling procedure of the bonding within six hours, shorten the time spent for bonding, and obtain a fast, reliable and Excellent bonding results. The advantages and processes of a method for manufacturing a glass microfluidic wafer according to the present invention will be further described through the following examples. [Embodiment 1] Materials · Generally commercially available microscope slides or various surface polished soda glasses were used as the glass substrate of the present invention. The glass substrate must be subjected to an annealing process at a high temperature of 400 ° C for 4 hours before use to remove the stress remaining in the glass substrate.

清潔:所有玻璃基材在使用之前必須置於沸騰的 Piranha 溶液(H2S04(°/〇) : H2 02 (°/〇) = 3 : 1 )中煮過10 分鐘, 接著將之取出並以去離子水(D I w a t e r )沖洗乾淨及以乾燥 空氣吹乾,然後將吹乾的玻璃基材放在1 0 0 t的電熱板烘 烤3分鐘,以便將玻璃表面的水分子徹底去除。Cleaning: All glass substrates must be boiled in a boiling Piranha solution (H2S04 (° / 〇): H2 02 (° / 〇) = 3: 1) before use for 10 minutes, then removed and deionized DI water is rinsed and blown with dry air, and then the blown glass substrate is baked on a 100 t hot plate for 3 minutes in order to completely remove water molecules on the glass surface.

第10頁 583756 _案號91123979_年月曰 修正_ 五、發明說明(8)Page 10 583756 _Case No. 91123979_ Year Month Amendment _ V. Description of Invention (8)

蝕刻圖案微影:待玻璃基材冷卻後,將它置於一密閉 容器中,並在容器裡滴入數滴Η M D S (h e x a m e t h y 1 d i s i 1 a z a n e )溶液,密封後放置約5分鐘。5 分鐘後將玻璃基材取出,放在電熱板上以1 Ο 0 °C烘烤3分 鐘,待玻璃基材冷卻至室溫後,將A Z 4 6 2 0正光阻劑以旋轉 塗布機均勻的塗佈在玻璃基材表面,接著以1 0 0 t烘烤3分 鐘。光阻劑在軟烤之後的厚度大約是3 // m,之後進行曝光 及顯影之程序。顯影完成之玻璃基材以乾燥的氮氣吹乾後 進行硬烤。在光阻的硬烤上,採取兩階段逐漸增溫的方式 來增加光阻在蝕刻緩衝液中能夠抵擋的時間,其步驟如 下:首先將電熱板昇溫到1 0 0 t,並將乾燥後的玻璃基材 置於其上,接著將溫度設定成1 5 0 t,開始加熱,待温度 升高到1 5 0 °C時開始計時1 0分鐘,即完成硬烤程序。 蝕刻:硬烤後等待玻璃基材冷卻,將其浸泡在蝕刻緩 衝液(Β Ο E 6 : 1 )中來進行微管道的蝕刻,而整個蝕刻環境 是放置在超音波震盪槽中。在蝕刻的過程中,會產生沉澱 物附著在微管道的表面,此時利用1 Μ濃度的鹽酸除去微管 道表面的沉澱物以免影響蝕刻品質。因此,每隔5分鐘, 就將玻璃基材從蝕刻液中取出,先以去離子水沖洗,再將 其放置於鹽酸溶液裡浸泡,並稍微晃動攪拌時間約1 Ο - 1 5 秒。完成後亦先以去離子水浸泡,再放回餘刻液中進行餘 刻。如此反覆進行,直到完成所設定之蝕刻深度,即完成 玻璃微流體晶片下板之製程。 熔融接合:將前述已經蝕刻完成的晶片下板以及鑽完 孔的上板(晶片上板係由另一塊玻璃基材於特定位置鑽孔Etching pattern lithography: After the glass substrate is cooled, place it in a closed container, and drop a few drops of Η M D S (h x x a me t h y 1 d i s i 1 a z a n e) solution into the container, and leave it for about 5 minutes after sealing. After 5 minutes, the glass substrate was taken out and placed on a hot plate at 100 ° C for 3 minutes. After the glass substrate was cooled to room temperature, the AZ 4 6 2 0 positive photoresist was uniformly applied on a spin coater. It was coated on the surface of the glass substrate and then baked at 100 t for 3 minutes. The thickness of the photoresist after soft baking is about 3 // m, and then the exposure and development procedures are performed. The developed glass substrate was blow-dried with dry nitrogen and then hard-baked. On the hard baking of the photoresist, two steps of gradually increasing the temperature are used to increase the time that the photoresist can resist in the etching buffer. The steps are as follows: first, the electric heating plate is heated to 100 t, and the dried The glass substrate was placed on it, then the temperature was set to 150 t, and heating was started. When the temperature rose to 150 ° C, it started to count for 10 minutes, and the hard baking process was completed. Etching: After hard baking, wait for the glass substrate to cool, and immerse it in the etching buffer (B 0 E 6: 1) to perform micro-channel etching, and the entire etching environment is placed in an ultrasonic vibration tank. During the etching process, precipitates will be attached to the surface of the micropipes. At this time, 1M hydrochloric acid is used to remove the precipitates on the surface of the micropipes to avoid affecting the etching quality. Therefore, every 5 minutes, the glass substrate is removed from the etching solution, rinsed with deionized water, and then immersed in a hydrochloric acid solution, and the stirring time is slightly shaken for about 10 to 15 seconds. After completion, soak it with deionized water, and then put it back into the remaining solution for the remaining time. This process is repeated until the set etching depth is completed, and the glass microfluidic wafer lower plate manufacturing process is completed. Fusion bonding: the previously etched wafer lower plate and the drilled upper plate (the wafer upper plate is drilled at another location by another glass substrate)

583756 _案號91123979_年月曰 修正_ 五、發明說明(9) 而製成),置於煮沸的Piranha溶液中10分鐘,以進行玻 璃表面的清潔,之後將晶片上、下板對位,並在兩塊玻璃 板之間滴上少許的去離子水,利用大氣壓力將兩塊玻璃板 π黏’’起來後,再利用兩片陶瓷基板作為墊片將上、下兩片 玻璃板夾合固定後再置於燒結爐中。利用高溫將玻璃加溫 至稍微熔融的狀態,使晶片上板及下板相互接合。前述升 溫速率為5 t /分鐘,並在5 8 0 °C的狀態下持溫1 0分鐘後降 溫’以完成該微流體晶片。 圖三係顯示光阻蝕刻罩幕8在蝕刻後之電子顯微鏡影 像圖。光阻蝕刻罩幕8在經過氫氟酸緩衝液一段時間蝕刻 後,仍完好地附著於玻璃基材9上,絲毫沒有被侵蝕的現 象,其顯示利用本製程所製作之光阻蝕刻罩幕8,具有可 長時間抵擋玻璃蝕刻液侵蝕之能力。 圖四係顯示蝕刻完成且剝除光阻後之玻璃晶片之上視 圖。利用塗佈於玻璃基材上之光阻薄膜做為玻璃之蝕刻罩 幕,玻璃在蝕刻後可得到良好幾何形狀定義,即使如圖四 虛線部分所示之極尖銳的角,亦可獲得良好之蝕刻結果。 圖五係顯示將晶片上板及下板熱熔融接合後之玻璃微流體 晶片之斷面圖。玻璃在經5 8 0 ° C接合後,晶片上、下板合 而為一,中間之介面在接合後消失,顯示其接合效果極為 良好。該接合技術不僅提供材料性質均一之微管道表面, 且晶片上、下板間無任何介面,可避免因接合時產生之縫 隙影響微流體晶片分析時之效能。 圖六係顯示以原子力顯微鏡掃瞄蝕刻後之玻璃表面之 表面型態圖。由圖可知,其蝕刻後之表面平整度良好,經583756 _Case No. 91123979_ Modification of the Year of the Year_ 5) (Invention (9) and made), placed in boiling Piranha solution for 10 minutes to clean the glass surface, and then aligned the upper and lower plates of the wafer, Then, a little deionized water was dropped between the two glass plates, and the two glass plates were bonded together using atmospheric pressure, and then the two glass substrates were used as gaskets to sandwich the upper and lower glass plates. After fixing, it is placed in a sintering furnace. The glass is heated to a slightly molten state by a high temperature, and the upper and lower plates of the wafer are bonded to each other. The aforementioned temperature increasing rate is 5 t / min, and the temperature is maintained at 580 ° C for 10 minutes, and then the temperature is decreased to complete the microfluidic wafer. FIG. 3 is an electron microscope image of the photoresist mask 8 after etching. The photoresist etching mask 8 is still intactly attached to the glass substrate 9 after being etched by the hydrofluoric acid buffer solution for a period of time, and is not eroded at all. It shows that the photoresist etching mask 8 produced by this process , Has the ability to resist glass etching solution erosion for a long time. Figure 4 shows the top view of the glass wafer after the etching is completed and the photoresist is removed. By using a photoresist film coated on a glass substrate as an etching mask for glass, the glass can get a good geometric definition after etching. Even with the extremely sharp angles shown in the dotted line in Figure 4, a good Etching results. Fig. 5 is a sectional view of a glass microfluidic wafer after the upper and lower plates of the wafer are thermally fusion-bonded. After the glass is bonded at 580 ° C, the upper and lower plates of the wafer are combined into one, and the middle interface disappears after bonding, showing that the bonding effect is extremely good. This bonding technology not only provides a micro-pipe surface with uniform material properties, and there is no interface between the upper and lower plates of the wafer, which can prevent the gap generated during bonding from affecting the performance of the microfluidic wafer analysis. Figure 6 shows the surface pattern of the etched glass surface scanned with an atomic force microscope. As can be seen from the figure, the surface flatness after etching is good.

第12頁 583756 ______案號91123979_年月日 修正_ 五、發明說明(10) 實際量測蝕刻後之玻璃表面(面積為7 X 7 //m2 ),其平 均表面粗糙度(Ra )為1 8 · 9 5埃,與玻璃蝕刻前之粗糙度 無異,顯示利用本發明之製程進行玻璃蝕刻,可提供高品 質且可靠之姓刻結果。 本發明為一技術平台之開發,可用於製作各式之微流 體晶片,以下將透過不同實施例進一步說明利用本發明之 製造方法製成之各式微流體晶片及其後續應用。 【實施例二】 圖七所示係為利用本發明所製作之十字型毛細管電泳 晶片11 ’其微管道4深度為40微米、寬度為1〇〇微米,晶片 1 1上設有複數個孔洞6作為液體進出之用。本實施例操作 樣本為ΙΟ-4 Μ之Rhodamine B與6·5χ10_3 Μ之Cy3染料之混合 溶液,操作時之注射電壓為1 · 2 k V,分離電壓為2 · 0 k V。 圖八係顯示利用本發明所製作之十字型毛細管電泳晶片1 1 分離染料混合物之圖譜,結果顯示,該晶片可順利分離兩 種染料’且C y 3染料之三個水解產物均可以被順利分離, 此顯示該十字型毛細管電泳晶片1 1具有良好之分離效率; 此外,經三次連續注射相同樣品後,由圖八顯示該晶片1 1 亦具有良好之再現性。 為證明本製程所製作之晶片可以進行生物樣本之檢 測,本實施例係利用F I T C染料所標定之多胜肽 (Ρ ο 1 y p e p t i d e )做為樣本,進行電泳分析。該多胜肽之 氨基酸序列為AEEEIYGVLFAKKKK (純度70%,分子量 2111.39,Sigma, USA),操作之樣品液係將250 ppm多胜 肽溶於1 mM之碟酸鈉溶液中(s〇dium phosphate),其注Page 12 583756 ______ Case No. 91123979_ Year Month Day Amendment _ V. Description of the Invention (10) Actual measurement of the surface of the glass after etching (area 7 X 7 // m2), the average surface roughness (Ra) is 18.5 · 95 Angstroms, which is no different from the roughness before the glass etching, shows that the glass etching using the process of the present invention can provide high-quality and reliable engraving results. The present invention is a development of a technology platform that can be used to make various microfluidic wafers. Various microfluidic wafers made by the manufacturing method of the present invention and their subsequent applications will be further explained through different embodiments. [Embodiment 2] FIG. 7 shows a cross-shaped capillary electrophoresis wafer 11 ′ manufactured using the present invention. The microchannel 4 has a depth of 40 μm and a width of 100 μm. A plurality of holes 6 are provided on the wafer 11. For liquid in and out. The operation sample in this example is a mixed solution of 10-4 M Rhodamine B and 6. 5x10_3 M Cy3 dye. The injection voltage during operation is 1.2 kV and the separation voltage is 2.0 kV. Figure 8 shows the cross-linked capillary electrophoresis wafer 1 1 using the present invention to separate the dye mixture map, the results show that the wafer can smoothly separate two dyes' and three hydrolysates of C y 3 dyes can be successfully separated This shows that the cross-type capillary electrophoresis wafer 11 has a good separation efficiency. In addition, after three consecutive injections of the same sample, FIG. 8 shows that the wafer 1 1 also has good reproducibility. In order to prove that the wafer produced by this process can be used for the detection of biological samples, this embodiment uses the polypeptide (P ο 1 y p e p t i d e) calibrated by F I T C dye as a sample for electrophoretic analysis. The amino acid sequence of the peptide is AEEEIYGVLFAKKKK (purity 70%, molecular weight 2111.39, Sigma, USA). The sample solution used was to dissolve 250 ppm of the peptide in 1 mM sodium phosphate solution. Its note

第13頁 583756 _案號91123979_年月曰 修正_ 五、發明說明(11) 射以及分離電壓分別為1 . 2 k V及2 . 0 k V。圖九係顯示利用 本發明所製作之十字型毛細管電泳晶片1 1分離多胜肽之圖 譜,結果顯示,該晶片1 1不僅可以穩定的電滲透流注射樣 品進入分離管道中,並可在分離管道中順利分離生物樣 品,此外,經四次連續注射相同樣品後,由圖九顯示該晶 片1 1亦具有良好之再現性。 【實施例三】 圖十係顯示以本發明之方法所製作之微流體細胞計數 晶片1 2 ,其係包含微管道4及孔洞6,其可應用於細胞樣本 之計數、檢測、分類,並可整合光纖結構1 3,以進行晶片 内之即時檢測。 【實施例四】 圖十一係利用本製程所製作之連續進樣電泳晶片1 4, 其微管道4最寬處為3毫米,在晶片上下板接合後絲毫沒有 塌陷或黏著之情形發生,其顯示本製程之接合技術,可接 合大管道之玻璃晶片。該晶片1 4可應用於生物樣品之連續 進樣,以進行長時間之動態量測。 【發明之功效】 本發明係提供一種玻璃微流體晶片之製程技術,用於 在玻璃基板中製作各式微流體晶片,相較於習知之技術, 其優點如下:1、本發明之製程技術係可適用於各種玻璃 基材,其價格僅為傳統使用石英或硼玻璃製程技術之數十 分之一至數分之一。2、本發明採用簡單之正光阻做為玻 璃蝕刻罩幕,且由標準之光刻顯影程序定義蝕刻之圖案, 免除金屬鍍膜或化學氣相沈積等複雜、昂貴、耗時之程Page 13 583756 _Case No. 91123979_ Year Month Amendment _ V. Description of the invention (11) The emission and separation voltages are 1.2 k V and 2.0 k V, respectively. Fig. 9 shows the separation pattern of peptides using the cross-shaped capillary electrophoresis wafer 11 made by the present invention. The results show that the wafer 11 can not only inject a stable electroosmotic flow into the separation pipeline, but also can be used in the separation pipeline. The biological sample was successfully separated. In addition, after four consecutive injections of the same sample, Figure 9 shows that the wafer 11 also has good reproducibility. [Embodiment 3] Figure 10 shows a microfluid cell counting wafer 12 made by the method of the present invention, which contains microchannels 4 and holes 6, which can be used for counting, detecting, and classifying cell samples. Integrate fiber structure 1 3 for real-time inspection within the chip. [Embodiment 4] Figure 11 is a continuous-injection electrophoresis wafer 14 produced by this process. The widest part of the microchannel 4 is 3 mm. After the upper and lower plates of the wafer are joined, there is no collapse or adhesion. Shows the bonding technology of this process, which can bond glass wafers of large pipes. The wafer 14 can be used for continuous injection of biological samples for long-term dynamic measurement. [Effects of the invention] The present invention provides a process technology for glass microfluidic wafers, which is used to make various microfluidic wafers in glass substrates. Compared with the conventional technology, its advantages are as follows: 1. The process technology of the present invention It can be applied to various glass substrates, and its price is only one tenth to one tenth of that of traditional quartz or boron glass process technology. 2. The present invention uses a simple positive photoresist as a glass etching mask, and the etching pattern is defined by a standard photolithographic development procedure, eliminating the complicated, expensive and time-consuming processes such as metal plating or chemical vapor deposition.

第14頁 583756 _案號91123979_年月曰 修正_ 五、發明說明(12) 序,因此可以降低成本,大幅縮短製程時間。3、本製程 發展一光阻烘烤程序,不僅沒有複雜之升降溫程序,且全 部烘烤過程僅需約十五分鐘,可改善傳統必須長時間烘烤 光阻之缺點,並獲得一可以抵擋蝕刻液約七十分鐘以上之 光择層。4、本製程提出一獨創之玻璃蝕刻程序,在超音 波震盪下進行蝕刻,且可配合特殊之化學方法去除沉澱物 而獲得一極為平整之蝕刻表面,且其蝕刻速率可達每分鐘 一微米,因此可以快速達到所需之蝕刻深度,縮短製程時 間。5、本製程提出一快速熱熔融接合方式進行玻璃接 合,其不僅不需要複雜嚴格之清洗程序,亦不需要冗長之 升降溫過程,僅需在5 8 0 ° C中持續十分鐘,即可獲得接合 強度極佳、微管道之表面性質均一之微流體晶片。6、本 發明所發展之製程極短,其可在十小時之内完成包含晶片 接合之所有步驟,比較於傳統製程技術在接合過程就必須 花費十數小時以上,本製程乃係現有揭露之文獻報導中製 程費時最短之技術。7、本製程乃一製程技術平台,其可 以製作各式玻璃微流體晶片,應用範圍極廣,且其快速可 靠之製程特性,非常適合商業化之需求。Page 14 583756 _ Case No. 91123979_ Year Month Amendment _ V. Description of the invention (12), so it can reduce costs and shorten the process time. 3. This process develops a photoresist baking process. Not only does it have no complicated temperature rise and fall process, but the entire baking process only takes about fifteen minutes. The photoselective layer of the etching solution for more than 70 minutes. 4. This process proposes a unique glass etching procedure, which is performed under ultrasonic vibration, and can be used to remove sediments with special chemical methods to obtain a very flat etching surface, and its etching rate can reach one micron per minute. Therefore, the required etching depth can be quickly achieved, and the process time can be shortened. 5. This process proposes a rapid thermal fusion bonding method for glass bonding, which not only does not require complicated and strict cleaning procedures, and does not require a lengthy temperature rise and fall process, it only needs to continue for 10 minutes at 580 ° C to obtain Microfluidic wafer with excellent bonding strength and uniform surface properties of microchannels. 6. The process developed by the present invention is extremely short. It can complete all steps including wafer bonding within ten hours. Compared with the traditional process technology, it must take more than ten hours in the bonding process. This process is an existing document disclosed. The technology with the shortest process time in the report. 7. This process is a process technology platform, which can produce various types of glass microfluidic wafers, has a wide range of applications, and its fast and reliable process characteristics are very suitable for commercial needs.

第15頁 583756 _案號91123979_年月曰 修正_ 圖式簡單說明 圖一 (A )至圖一 (Η )係顯示本發明之玻璃微流體晶 片之製程流程圖。 圖二係顯示圖一 (Η )中利用基板固定晶片上下板之 示意圖。 圖三係顯示光阻蝕刻罩幕在蝕刻後之電子顯微鏡影像 圖。 圖四係顯示蝕刻完成且剝除光阻後之玻璃晶片之電子 顯微影像圖。 圖五係顯示玻璃晶片上下板經熱熔融接合後之斷面 圖。 圖六係顯示以原子力顯微鏡掃瞄蝕刻後之玻璃表面之 表面型態圖。 圖七係顯示以本發明之方法所製作之十字型毛細管電 泳晶片。 圖八係顯示以圖七之十字型毛細管電泳晶片分離染料 混合物之圖譜。 圖九係顯示以圖七之十字型毛細管電泳晶片分離多胜 肽生物樣本之圖譜。 圖十係顯示以本發明之方法所製作之微流體細胞計數 晶片。 圖十一係顯示以本發明之方法所製作之連續進樣電泳Page 15 583756 _Case No. 91123979_ Year Month Revision _ Brief Description of Drawings Figures 1 (A) to 1 (一) are process flow diagrams showing the glass microfluidic wafer of the present invention. Fig. 2 is a schematic diagram showing the use of a substrate to fix the upper and lower plates of the wafer in Fig. 1 (i). Figure 3 is an electron microscope image of a photoresist mask after etching. Figure 4 is an electron micrograph of a glass wafer after the etching is completed and the photoresist is removed. Fig. 5 is a sectional view showing the upper and lower plates of a glass wafer after thermal fusion bonding. Figure 6 shows the surface pattern of the etched glass surface scanned with an atomic force microscope. Fig. 7 shows a cross-shaped capillary electrophoresis wafer manufactured by the method of the present invention. Figure 8 shows the separation of the dye mixture using the cross-shaped capillary electrophoresis wafer of Figure 7. Figure 9 shows the separation of dopeptide biological samples using the cross-shaped capillary electrophoresis wafer of Figure 7. Fig. 10 shows a microfluidic cell counting wafer made by the method of the present invention. Figure 11 shows the continuous injection electrophoresis produced by the method of the present invention

Claims (1)

583756 _案號91123979_年月曰 修正_ 六、申請專利範圍 1 . 一種玻璃微流體晶片之製程方法,至少包含下列程序: 提供一玻璃基材作為晶片下板; 塗佈光阻於前述晶片下板上; 對晶片下板施以烘烤程序; 對晶片下板施以曝光程序; 對晶片下板施以光阻顯影程序; 對晶片下板施以玻璃蝕刻程序; 對晶片下板施以剝除光阻程序; 提供另一玻璃基材作為晶片上板; 於前述晶片上板鑽孔;及583756 _Case No. 91123979_ Modification of Year of the Year_ 6. Application for Patent Scope 1. A method for manufacturing a glass microfluidic wafer, including at least the following procedures: Provide a glass substrate as the lower plate of the wafer; A baking process for the lower wafer board; an exposure process for the lower wafer board; a photoresist development process for the lower wafer board; a glass etching process for the lower wafer board; a stripping light for the lower wafer board Resistance procedure; providing another glass substrate as a wafer upper plate; drilling holes in the wafer upper plate; and 以熱溶融方式接合前述晶片上板及下板。 2 .如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,進一步包含一玻璃基板清洗之程序,係實施於接合 晶片上板及下板之程序前。 3.如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,其中前述玻璃基材係可為鈉玻璃、硼玻璃、鉛玻 璃、PYREX玻璃以或石英。 4 .如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,其中前述玻璃基材較佳係為鈉玻璃。The wafer upper plate and the lower plate are joined by a thermal fusion method. 2. The method for manufacturing a glass microfluidic wafer as described in item 1 of the scope of the patent application, further comprising a procedure for cleaning the glass substrate, which is performed before the procedure for bonding the upper plate and the lower plate of the wafer. 3. The method for manufacturing a glass microfluidic wafer according to item 1 of the scope of the patent application, wherein the aforementioned glass substrate may be soda glass, boro glass, lead glass, PYREX glass, or quartz. 4. The method for manufacturing a glass microfluidic wafer as described in item 1 of the scope of patent application, wherein the aforementioned glass substrate is preferably soda glass. 5.如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,其中前述烘烤程序包含:軟烤程序,係實施於塗佈 光阻於晶片上板後之程序;及硬烤程序,係實施於光阻 顯影後之程序。 6 .如申請專利範圍第5項所述之玻璃微流體晶片之製程方5. The method for manufacturing a glass microfluidic wafer as described in item 1 of the scope of the patent application, wherein the foregoing baking process includes: a soft baking process, which is a process implemented after coating a photoresist on a wafer; and a hard baking process. , Is implemented after the photoresist development process. 6. The manufacturing method of glass microfluidic wafer as described in item 5 of the scope of patent application 第17頁 583756 案號 91123979 年 修正 六、申請專利範圍 法,其中前述軟烤之溫度較佳係為9 0 - 1 0 0 °C。 7 .如申請專利範圍第5項所述之玻璃微流體晶片之製程方 法,其中前述硬烤之溫度較佳係為1 0 0 - 1 5 0 °C,並以兩 階段逐漸增溫之方式進行。 8 .如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,其中前述光阻係可為正型或負型光阻劑。 9 .如申請專利範圍第8項所述之玻璃微流體晶片之製程方 法,其中前述之光阻劑較佳係為A Z 4 6 2 0之光阻劑。Page 17 583756 Case No. 91123979 Amendment VI. Patent Application Law, in which the aforementioned soft roasting temperature is preferably 90 °-100 ° C. 7. The method for manufacturing a glass microfluidic wafer as described in item 5 of the scope of the patent application, wherein the temperature of the aforementioned hard roasting is preferably 100-150 ° C, and the temperature is gradually increased in two stages. . 8. The method for manufacturing a glass microfluidic wafer as described in item 1 of the scope of patent application, wherein the aforementioned photoresist can be a positive or negative photoresist. 9. The method of manufacturing a glass microfluidic wafer as described in item 8 of the scope of the patent application, wherein the aforementioned photoresist is preferably a photoresist of AZ 4 6 2 0. 1 0 .如申請專利範圍第1項所述之玻璃微流體晶片之製程方 法,進一步包含將晶片上板及晶片下板固定於兩基板之 間,以利於熱熔融接合。 1 1 .如申請專利範圍第1 0項所述之玻璃微流體晶片之製程 方法,其中前述基板係可為陶瓷基板、不鏽鋼板、碳化 矽板、碳化鎢板、氧化鋁板、氧化鍅板等任何耐熱材質 均可。 1 2.如申請專利範圍第1 1項所述之玻璃微流體晶片之製程 方法,其中前述基板較佳係為陶瓷基板。10. The method for manufacturing a glass microfluidic wafer as described in item 1 of the scope of the patent application, further comprising fixing the wafer upper plate and the wafer lower plate between the two substrates to facilitate thermal fusion bonding. 1 1. The method for manufacturing a glass microfluidic wafer as described in item 10 of the scope of the patent application, wherein the aforementioned substrate may be any of a ceramic substrate, a stainless steel plate, a silicon carbide plate, a tungsten carbide plate, an alumina plate, and a hafnium oxide plate. Any heat-resistant material is acceptable. 1 2. The method for manufacturing a glass microfluidic wafer as described in item 11 of the scope of patent application, wherein the aforementioned substrate is preferably a ceramic substrate. 第18頁Page 18
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