579545 五、發明說明（1) 發明所屬之技術領域 本發明是有關於一種沉積室（deposition chamber)， 且特別是關於一種沉積室之部件（pa r t)結構。 · 先前技術 在半導體製程中，為了有利於後續如曝光製程等作定 位（alignment)的製程，目前大多在進行沉積製程時，於 沉積室内的晶片座中採用具有定位用凸出部的壓環將晶片 固定，之後再進行沉積製程，以便同時於晶片上沉積預定 形成的薄膜以及形成定位用的標記（m a r k )，而沉積室内的 晶片座以及具有定位用凸出部的壓環之結構如第1圖所 示。 泰 第1圖是習知一種沉積室的部件結構之立體示意圖。 請參照第1圖，於沉積室中的晶片座1 0 0中配置有一壓環 (clamp)102 ，而且壓環102具有兩個凸出部104。當晶片 1 0 6被放置於晶片座1 0 0内之後，壓環1 0 2會向下壓住晶片 106。由於壓環102具有數個定位用的凸出部104，所以進 、 行沉積製程後，於晶片1 0 6上除了會沉積預定形成的薄膜 外，在凸出部1 0 4遮蔽的部位將不會有薄膜沉積，因此在 · 此處形成後續製程定位用的標記。 目前用以形成定位用標記的沉積室除了在晶片座加入 壓環外，為了將壓環上累積的電荷釋出，還會在晶片座底 下開數個小洞，並於每個洞中插入一個黃銅製的螺桿，再 將這些螺桿與壓環相接，以使壓環上累積的電荷從螺桿釋 出0579545 V. Description of the invention (1) Field of the invention The present invention relates to a deposition chamber, and more particularly to a structure of a deposition chamber. · In the prior art, in order to facilitate subsequent alignment processes, such as exposure processes, in the semiconductor manufacturing process, most of the current processes use a pressure ring with a positioning protrusion in the wafer holder in the deposition chamber during the deposition process. The wafer is fixed, and then a deposition process is performed to deposit a predetermined film and a mark for positioning at the same time on the wafer, and the structure of the wafer holder and the pressure ring with the positioning protrusions in the deposition chamber are as in the first As shown. Figure 1 is a schematic perspective view of the component structure of a conventional deposition chamber. Referring to FIG. 1, a clamp 102 is disposed in the wafer holder 100 in the deposition chamber, and the clamp 102 has two protruding portions 104. After the wafer 106 is placed in the wafer holder 100, the pressure ring 10 2 presses the wafer 106 downward. Since the pressing ring 102 has a plurality of positioning protrusions 104, after the deposition process is performed, in addition to depositing a thin film to be formed on the wafer 106, the area shielded by the protrusions 104 will not A thin film is deposited, so a mark for subsequent process positioning is formed here. In addition to adding a pressure ring to the wafer holder, the current deposition chamber used to form the positioning marks will open several small holes under the wafer holder in order to release the accumulated charge on the ring, and insert one in each hole. Screws made of brass, which are then connected to the pressure ring, so that the accumulated charge on the pressure ring is released from the screw.
10099twf.ptd 第4頁 579545 五、發明說明（2) 然而，上述用以釋放累積電荷的螺桿常常因為其可允 許之角度變4匕（allowable change of angle)過小，所謂 的「可允許之角度變化」就是指被置於小洞中的螺桿所能 -傾斜移動的角度範圍，而小的可允許之角度變化會導致部 分螺桿無法接觸到壓環，進而使原本平行下壓晶片之壓環 受到部分位置的螺桿碰觸而傾斜。 由於壓環傾斜會導致晶片原本被壓環凸出部遮蔽的部 位暴露出來，而在沉積製程後無法獲致清晰的定位用標 記，致使後續製程在定位上發生困難。如欲確保後續製程 的定位正確，則需要花費額外的成本與時間去進行晶片重 工（rework)，但是如此一來又會導致良率（yield)降低等 _ 缺點。 發明内容 因此，本發明之目的是提供一種沉積室之部件結構， 以使壓環的位置不受螺桿與絕緣部分的限制。 本發明之又一目的是提供一種沉積室之部件結構，以 . 降低晶片重工的機率。 本發明之再一目的是提供一種沉積室之部件結構，以 _ 增進良率。 根據上述與其它目的，本發明提出一種沉積室之部件 結構，至少包括一外殼、位於外殼内的一壓環以及一螺 桿，這個螺桿穿過外殼接觸壓環，用以釋放壓環所累積的 電荷。此外，外殼還包括一絕緣部份環繞螺桿，以隔絕螺 桿與外殼，其中螺桿的可允許之角度變化大於2 3. 2。10099twf.ptd Page 4 579545 V. Description of the invention (2) However, the screw used to release the accumulated charge is often too small because its allowable change of angle is too small. The so-called "allowable change of angle" "It refers to the range of angles that the screw placed in the small hole can tilt. The small allowable angle change will cause some screws to be unable to contact the pressing ring, which will cause the original pressing ring of the wafer to be pressed in parallel. The screw in position is tilted by touching. The tilt of the pressure ring will cause the portion of the wafer that was originally hidden by the protrusion of the pressure ring to be exposed, and a clear positioning mark cannot be obtained after the deposition process, making subsequent processes difficult to locate. If you want to ensure the correct positioning of subsequent processes, you need to spend extra cost and time to rework the wafer, but this will lead to lower yields and other disadvantages. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a component structure of a deposition chamber, so that the position of the pressure ring is not limited by the screw and the insulating portion. Another object of the present invention is to provide a component structure of a deposition chamber to reduce the probability of wafer rework. Another object of the present invention is to provide a component structure of a deposition chamber to improve yield. According to the above and other objectives, the present invention provides a component structure of a deposition chamber, which includes at least a shell, a pressure ring located in the shell, and a screw. The screw passes through the shell to contact the pressure ring to release the charge accumulated by the pressure ring . In addition, the housing also includes an insulating part surrounding the screw to isolate the screw from the housing, where the allowable angle change of the screw is greater than 2 3.2.
10099twf.ptd 第5頁 579545 五、發明說明（3) 本發明又提出一種沉積室之部件結構，至少包括一外 殼、位於外殼内的一壓環以及一螺桿，這個螺桿穿過外殼 接觸壓環，用以釋放壓環所累積的電荷。此外，外殼還包 括一絕緣部份環繞螺桿，以隔絕螺桿與外殼，其中螺桿的 直徑與絕緣部分的内徑之比率小於0. 4。 本發明利用擴寬絕緣部分的内徑或是降低螺桿的直 徑，以使螺桿的可允許之角度變化增加。因此，當螺桿與 壓環相接後，將不會有部分螺桿無法接觸壓環而使壓環傾 斜的情形發生，進而降低晶片重工的機率，並且能提昇良 率。 為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 說明如下： 實施方式 本發明.可應用任何沉積製程所使用的沉積室 (deposition chamber)中，如第2圖所示用於在晶片 (wafer)上沉積薄膜的同時形成定位用標記（mark)之裝 置。 第2圖是依照本發明之一較佳實施例之沉積室的部件 結構側視示意圖。請參照第2圖，沉積室的部件包括一外 殼（shield)200 、 一壓環（clamp)202 、 一螺桿（screw)210 以及一絕緣部份（iso 1 at or )212，其中外殼2 0 0譬如是一晶 片座，螺桿2 1 0的材質則屬於導體材料如黃銅；而絕緣部 分2 1 2之材質譬如是陶瓷材料、外型則可以是圓環狀。雖10099twf.ptd Page 5 579545 V. Description of the invention (3) The invention also proposes a component structure of a deposition chamber, which includes at least a shell, a pressure ring located in the shell and a screw, and the screw passes through the shell to contact the pressure ring. Used to release the charge accumulated on the pressure ring. In addition, the housing also includes an insulating portion surrounding the screw to isolate the screw from the housing, wherein the ratio of the diameter of the screw to the inner diameter of the insulating portion is less than 0.4. In the present invention, the inner diameter of the insulating portion is widened or the diameter of the screw is reduced, so that the allowable angular variation of the screw is increased. Therefore, when the screw is connected to the pressure ring, there will be no tilting of the pressure ring due to the inability of some screws to contact the pressure ring, thereby reducing the probability of wafer rework and improving the yield. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following exemplifies preferred embodiments in conjunction with the accompanying drawings to describe in detail as follows: Embodiments The present invention. Any deposition process can be applied A deposition chamber used is a device for forming a positioning mark while depositing a thin film on a wafer as shown in FIG. 2. Fig. 2 is a schematic side view of a component structure of a deposition chamber according to a preferred embodiment of the present invention. Please refer to Fig. 2. The components of the deposition chamber include a shield 200, a clamp 202, a screw 210, and an insulation part (iso 1 at or) 212. The housing 2 0 0 For example, a wafer holder, the material of the screw 2 10 is a conductive material such as brass; and the material of the insulating portion 2 12 is, for example, a ceramic material, and the shape may be a ring shape. although
10099twf.ptd 第6頁 579545 五、發明說明（4) ----- ，於本圖中僅出現一個螺桿21〇，但是實際上螺桿21〇的數 Ϊ可依照所需而增加’因此螺桿2丨〇的數量並不侷限於一 個。此外，絕緣部分2 1 2與外殼2 〇 〇係一體成型的。 請繼續參照第2圖，壓環2 〇 2是配置於外殼2 〇 〇上，用 來壓住放置於外殼2 0 0中的晶片2 〇 6。而螺桿2丨〇則穿過外 殼2 0 0並接觸壓環2 0 2，以釋放累積於壓環2〇2中的電荷， 其中螺^210的可允許之角度變化（allowable change of a n g 1 e )需大於2 3 · 2 ’或是螺桿2丨〇的直徑與絕緣部分2丨2的 内徑比率小於0 · 4 °絕緣部份2丨2則環繞螺桿2丨〇且與外殼 2 0 0相連’以隔絕螺桿21〇與外殼2 〇〇。此外，壓環2〇2在 對於螺桿210的部位2 0 2a可配置一凹點。 州 為更詳細說明螺桿2 1 〇與絕緣部分2丨2之間的關係，^ 4 見第3圖所示。 ％ 第3圖是依照第2圖所繪示之沉積室的部件結構的第 部分之剖面放大示意圖。 清參照第3圖’螺桿2 1 〇在絕緣部分2 1 2中傾斜移動 時，螺桿2 1 0所能傾斜的最大角度是9 〇 — 0 ，而其中的爽 0與絕緣部分212的高度y、内徑Χ2和螺桿21〇直徑之 關係如下式： 1 』的 t an 0 = y / (X2- Χι) 當夾角0愈小代表螺桿2 1 0所能傾斜的最大角度愈大， 因此螺桿210的可允許之角度變化將會增加。而為增加螺’ 桿2 1 0的可允許之角度變化，可以從兩方面著手，一是拋_ 加絕緣部分2 1 2的内徑X2、一是控制螺桿2丨〇的直徑&與絕10099twf.ptd Page 6 579545 V. Description of the invention (4) ----- In the figure, only one screw 21〇 appears, but in fact the number of screws 21 can increase as needed. Therefore screw 2 The number of 丨 〇 is not limited to one. In addition, the insulating portion 2 12 is integrally formed with the housing 2000. Please continue to refer to FIG. 2. The pressing ring 2 02 is arranged on the housing 200 and is used to press the wafer 2 06 placed in the housing 200. The screw 2 丨 〇 passes through the housing 200 and contacts the pressure ring 202 to release the electric charge accumulated in the pressure ring 200, where the allowable change of angle of the screw ^ 210 (allowable change of ang 1 e ) Needs to be larger than 2 3 · 2 'or the ratio of the diameter of the screw 2 丨 〇 to the inner diameter of the insulating part 2 丨 2 is less than 0 · 4 ° The insulating part 2 丨 2 surrounds the screw 2 丨 〇 and is connected to the housing 2 0 0 'To isolate the screw 21〇 and the housing 2000. In addition, the pressure ring 202 may be provided with a recess at a portion 2 2a with respect to the screw 210. State For a more detailed explanation of the relationship between the screw 2 10 and the insulating portion 2 丨 2, ^ 4 is shown in FIG. 3. % FIG. 3 is an enlarged schematic cross-sectional view of a part of the component structure of the deposition chamber shown in FIG. 2. Refer to Figure 3 'when the screw 2 1 〇 moves obliquely in the insulating part 2 1 2, the maximum angle that the screw 2 1 0 can tilt is 9 0-0, where the cool 0 and the height y of the insulating part 212, The relationship between the inner diameter χ2 and the diameter of the screw 210 is as follows: t an 0 = y / (X2- × ι) when the angle 0 is smaller, the larger the maximum angle that the screw 2 1 0 can tilt, the larger the angle of the screw 210. The allowable angle change will increase. In order to increase the allowable angle change of the screw rod 2 1 0, two aspects can be taken into consideration. One is to throw the inner diameter X 2 of the insulated portion 2 1 2 and the other is to control the diameter &
10099twf. ptd 第7頁 579545 五、發明說明（5) 緣部分2 1 2的内徑x2的比率。 本發明即利用控制螺桿直徑與絕緣部分的内徑比率小 於0. 4或是直接將螺桿的可允許之角度變化設定為大於2 3. 2，以避免習知因可允許之角度變化過小，而導致部分螺 桿無法接觸到壓環，使壓環傾斜的情形發生。因此，本發 明能降低晶片重工（rework)之機率，進而提昇產品良率 (yield)。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作各種之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。10099twf. Ptd Page 7 579545 V. Description of the invention (5) The ratio of the inner diameter x 2 of the edge portion 2 1 2. In the present invention, the ratio of the diameter of the screw to the inner diameter of the insulating portion is controlled to be less than 0.4, or the allowable angle change of the screw is set to be greater than 2 3.2, in order to avoid that it is conventional that the allowable angle change is too small, and As a result, part of the screw cannot contact the pressure ring, which causes the pressure ring to tilt. Therefore, the present invention can reduce the probability of wafer rework, thereby improving product yield. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.
10099twf.ptd 第8頁 579545 圖式簡單說明 第1圖是習知一種沉積室的部件結構立體示意圖； 第2圖是依照本發明之一較佳實施例之沉積室的部件 結構側視不意圖，以及 第3圖是依照第2圖所繪示之沉積室的部件結構的第1Π 部分之剖面放大示意圖。 圖式標示說明 1 0 0 :晶片座 1 0 2，2 0 2 :壓環 1 0 4 :凸出部 1 0 6 ，2 0 6 :晶片 2 0 0 ·•外殼 2 1 0 :螺桿 2 1 2 :絕緣部分 X1 :螺桿直徑 X 2 :絕緣部分的内徑 y :絕緣部分的高度 (9 :夾角10099twf.ptd Page 8 579545 Brief description of the drawings. Figure 1 is a perspective view of the component structure of a conventional deposition chamber. Figure 2 is a side view of the component structure of a deposition chamber according to a preferred embodiment of the present invention. And FIG. 3 is an enlarged schematic cross-sectional view of part 1Π of the component structure of the deposition chamber shown in FIG. 2. Description of the diagrams: 1 0 0: wafer holder 1 0 2, 2 0 2: pressure ring 1 0 4: protruding part 10 6, 2 0 6: wafer 2 0 0 · • housing 2 1 0: screw 2 1 2 : Insulation part X1: Screw diameter X 2: Inner diameter of the insulation part y: Height of the insulation part (9: Angle
10099twf. ptd 第9頁10099twf. Ptd Page 9