569480 五、發明說明（l) 發明所屬之技術領域 s =發明是有關於一種致冷器結構及其製造方法，特別 種可使熱傳導率及製程良率更為提升之致冷器 結構及其製造方法。 先前技術 請參閱第1圖，一習知之致冷器（therm〇electric c〇oler)l 疋由多個n 型半導體（N_type semi—c〇nduct〇r ^ 工 和P型半導體（P—type sem卜c〇nduct〇r)12互相排列而組 成，而N型半導體U和p型半導體12之間是以一般的金屬導 體1 3，例如銅或鋁，相連接而成一完整線路。然後，再由 兩片陶瓷基板14a、14b將這些N型半導體11和p型半導體12 封裝起來，如第2圖所示。此外，採用陶瓷基板丨4a、丨4b 之原因是因為其具有絕緣之特性。 仍請參閱第1圖，一直流電源丨5可提供電子流動所需 的能量。當通上電源之後，電子是由直流電源丨5之負極出 發，首先經過P型半導體1 2 ,並於此吸收熱量，當電子到 達N型半導體11時，又可將熱量釋出。每當電子經過一 半導體11和P型半導體12模組，就會有熱量由一邊被送到 另外一邊’因此會造成溫差而形成冷熱端。在第1圖中， 熱端是陶瓷基板14b，而冷端則是陶瓷基板14a。因此，A 、之陶兗基板1 4 a可以接觸熱源，也就是欲冷卻之物，例 如電腦之CPU，而熱端之陶瓷基板14b則可接觸散熱片或風 扇’以將熱量排出。至於致冷器1還可用於除濕箱、小型至 〇787-9113TWF(Nl);HAWDONG.ptd 第5頁 569480 五、發明說明（2) ------- 冰箱以及冷熱敷療器等。 然而，由於習知之致冷器丨在封裝上是以陶莞材 基板，例如含量為96%之氧化鋁（Al2〇3)陶瓷，此種材^ 陶瓷基板的延展性低且容易脆裂，故在封裝過程中易於 成微小裂縫，而使致冷器1之使用壽命減短或製程良率降’ 低。此外，陶瓷基板之導熱率低，而使致冷器〗之熱傳導 效率無法有效提升。因此，陶瓷基板除在應用上受限制 外’相對之製造成本也較南’尤以氮化Ig(AiN)陶兗芙柄 之價格更加昂貴。 i 有鐘於此，本發明之目的是要提供一種改良型之致A 器結構’將金屬（鋁合金）基板經表面陽極氧化處理後，^ 触刻成具有單面金屬氧化層及另一面為金屬層之金屬基 板，以取代習知之陶瓷基板。此金屬基板之製程簡單，並 且具有熱傳導率高及不易脆裂之特性，故可使致冷器廣泛 且有效率地應用於各種領域之產品上，並可使致冷器之製 造成本大幅降低。 發明内容 本發明基本上採用如下所詳述之特徵以為了要解決上 述之問題。也就是說，本發明包括一第一金屬基板，具有 一第一金屬氧化層平面；一第二金屬基板，設置於該第一 金屬基板之下，並且具有一第二金屬氧化層平面，其中， 該第一金屬氧化層平面係相對於該第二金屬氧化層平面； 複數個金屬導體’焊接於該第一金屬氧化層平面以及該第569480 V. Description of the invention (l) The technical field to which the invention belongs s = The invention relates to a refrigerator structure and a manufacturing method thereof, particularly a refrigerator structure and a manufacturing method thereof which can further improve heat conductivity and process yield. method. Please refer to FIG. 1 for the prior art. A conventional refrigerator (thermoelectric electric) is composed of a plurality of n-type semiconductors (N_type semi-conductor) and P-type semiconductors (P-type sem). Buconductor) 12 are aligned with each other, and the N-type semiconductor U and the p-type semiconductor 12 are connected by a general metal conductor 13 such as copper or aluminum to form a complete circuit. Then, it is further composed of Two ceramic substrates 14a and 14b encapsulate these N-type semiconductors 11 and p-type semiconductors 12, as shown in Fig. 2. In addition, the reason for using ceramic substrates 丨 4a, 丨 4b is because of their insulation properties. Referring to Figure 1, the DC power supply 5 can provide the energy required for the flow of electrons. When the power is turned on, the electrons start from the negative electrode of the DC power supply 5 and first pass through the P-type semiconductor 12 and absorb heat there. When the electrons reach the N-type semiconductor 11, it can release heat again. Whenever the electrons pass through a semiconductor 11 and P-type semiconductor 12 module, there will be heat from one side to the other ', so it will cause a temperature difference and form cold and heat. End. In Figure 1, the hot end is The ceramic substrate 14b, and the cold end is the ceramic substrate 14a. Therefore, the ceramic substrate 14a of A and A can contact the heat source, that is, the object to be cooled, such as the CPU of a computer, and the ceramic substrate 14b of the hot end can be contacted. Heat sink or fan 'to discharge heat. As for the refrigerator 1 can also be used in a dehumidification box, as small as 0787-9113TWF (Nl); HAWDONG.ptd page 5 569480 5. Description of the invention (2) ----- -Refrigerators and hot and cold therapy devices, etc. However, due to the known cooler, the packaging is made of ceramic substrates, such as alumina (Al203) ceramics with a content of 96%. This material is an extension of ceramic substrates. Low performance and easy brittleness, so it is easy to form small cracks during the packaging process, which shortens the life of the refrigerator 1 or reduces the process yield. In addition, the low thermal conductivity of the ceramic substrate makes the refrigerator 〖The heat conduction efficiency cannot be effectively improved. Therefore, in addition to the restrictions on the application of ceramic substrates, the 'relative manufacturing cost is also higher than that of South', especially the price of nitrided Ig (AiN) ceramic pot handles is more expensive. The object of the present invention is to provide an improved type A device. Structure 'After the surface of the metal (aluminum alloy) substrate is anodized, it can be engraved into a metal substrate with a single-sided metal oxide layer and a metal layer on the other side to replace the conventional ceramic substrate. The process of this metal substrate is simple, And it has the characteristics of high thermal conductivity and not easy to crack, so the refrigerator can be widely and efficiently applied to products in various fields, and the manufacturing cost of the refrigerator can be greatly reduced. SUMMARY OF THE INVENTION The present invention basically adopts The following features are described in detail to solve the above problems. That is, the present invention includes a first metal substrate having a first metal oxide plane; a second metal substrate disposed on the first metal substrate. And has a second metal oxide layer plane, wherein the first metal oxide layer plane is relative to the second metal oxide layer plane; a plurality of metal conductors are 'welded' to the first metal oxide layer plane and the first metal oxide layer plane;
0787-9113TWF(Nl);HAWDONG.ptd0787-9113TWF (Nl); HAWDONG.ptd
569480 五、發明說明（3) ---- 氧：：平面上；複數個N型半導體；以及複數 =上等N型半導體以及該等?型半導體係以交 麗ϊϋ式而設置於該第—金屬氧化層平面上之該等金 3該第二金屬氧化層平面上之該等金屬導體之間。 及該第二金屬基板係心合金所製成。第金屬基板以 屬氧月中，該第一金屬氧化層平面以及該第二金 果。9千係以陽極氧化處理而形成，以具有絕緣之效 屬氣：明中’該第一金屬氧化層平面以及該第二金 屬乳化層千面之成份係為氧㈣（ai2o3)。 又在本發明中，該等金屬導體係由銅所製成。 又在本發明中，該等金屬導體係由鋁所製成。 方的一種；冷器製造方法，該 _型半導體有㈣t金屬基板、—第二金屬基板、複數 AS，廿B 6 4複數型半導體以及複數個金屬導體之致 二第-金屬=i下列步驟：（a)清潔該第一金屬基板以及 第ϋίϋ之表面；⑻放置該第-金屬基板以及該 命笛一 Α ^ ί 陽極處理槽中以作陽極氧化處理，以使 以及該第二金屬基板分別具有-金屬氧化 I m . c取出該第一金屬基板以及該第二金屬基板， 並以膠布貼覆於诗敏 ^ i ^ ^ ^ .、Μ第一金屬基板之一表面以及該第二金屬 面、’（d)放置該第一金屬基板以及該第二金屬 土於餘刻液中以作金屬氧化層餘亥，J，直到未貼覆膠布 瞧 第7頁 0787-9113TWF(Nl);HAWDONG.ptd 156948〇 五、發明說明（4) 之金屬氧化層表面部 該第一金屬基板以及 第一金屬基板以及該 金屬基板以及該第二 平面以及一第二金屬 於該第一金屬氧化層 以及（h)排列並設置 該第一金屬氧化層平 化層平面上之該等金 同時，根據本發 括有脫醋及清洗之步 又在本發明中， 又在本發明中， 為使本發明之上 下文特舉較佳實施例 份完全被蝕刻清除；（e )取出並清洗 該第二金屬基板；（f)移除貼覆於該 第一金屬基板上之膠布’以使該第一 金屬基板分別具有一第一金屬氧化層 氧化層平面；（g)焊接該 平面以及該第二金屬氧化 該等N型半導體以及該等P 面上之該等金屬導體與該 屬導體之間。 明之致冷器製造方法，步 驟。 該蝕刻液係為氟酸。 該钱刻液係為麟酸。 述目的、特徵和優點能更 並配合所附圖式做詳細說 等金屬導體 層平面上； 型半導體於 第二金屬氧i 驟（a)更包 明顯易懂 明。 實施方式 茲配合圖式說明本發明之較佳實施例。 請參閱第3圖，本發明之致冷器結構1〇〇 第-金屬基板m、一第二金屬基板120、複數個：屬導體 130、複數個N型半導體140以及複數個p型半導體15〇。 如第3圖所示，第一金屬基板110具有一第一金 層平面112。第二金屬基板120是設置於第一金屬基板ιι〇 之下，並且具有一第二金屬氧化層平面122。同時，第一569480 V. Description of the invention (3) ---- Oxygen: on a plane; a plurality of N-type semiconductors; and a plurality of = high-quality N-type semiconductors and the semiconductors of this type are arranged on the first in a cross-shaped manner— The gold on the plane of the metal oxide layer 3 between the metal conductors on the plane of the second metal oxide layer. And the second metal substrate is made of a core alloy. The first metal substrate is a metal oxide layer, the plane of the first metal oxide layer, and the second metal substrate. The 9K series is formed by anodizing treatment to have an insulating effect. The composition of the first metal oxide layer plane and the second metal emulsified layer surface in Mingzhong is oxygen oxide (ai2o3). Also in the present invention, the metal conducting systems are made of copper. Also in the present invention, the metal guide systems are made of aluminum. A method for manufacturing a refrigerator; the _-type semiconductor has a ㈣t metal substrate, a second metal substrate, a plurality of AS, a 6B 6 4 complex semiconductor, and a plurality of metal conductors. The second-metal = i is the following steps: (A) cleaning the first metal substrate and the surface of the first metal substrate; placing the first metal substrate and the life flute in the anodizing tank for anodizing treatment, so that the second metal substrate and the second metal substrate have -Metal oxidation I m. C take out the first metal substrate and the second metal substrate, and apply adhesive tape to Shimin ^ i ^ ^ ^, one surface of the first metal substrate and the second metal surface, '(D) Place the first metal substrate and the second metal soil in the etching solution as a metal oxide layer Yu Hai, J, until no adhesive tape is attached. See page 7 0787-9113TWF (Nl); HAWDONG.ptd 1569485.0 V. Description of the invention (4) The surface of the metal oxide layer The first metal substrate and the first metal substrate and the metal substrate and the second plane and a second metal on the first metal oxide layer and (h) Arrange and set that first At the same time, the gold on the plane of the oxide layer and the flattening layer is also included in the present invention in accordance with the steps of descaling and cleaning according to the present invention, and in the present invention, in order to make the context of the present invention a preferred embodiment Completely removed by etching; (e) taking out and cleaning the second metal substrate; (f) removing the adhesive tape 'pasted on the first metal substrate so that the first metal substrate has a first metal oxide layer for oxidation respectively Layer plane; (g) soldering the plane and the second metal between the N-type semiconductors and the metal conductors on the P plane and the sub-conductor. Mingzhi refrigerator manufacturing method, steps. This etching solution is fluoric acid. The money engraving system is Linic acid. The stated purpose, features and advantages can be described in more detail in conjunction with the attached drawings on the plane of a metal conductor layer; the semiconductor is more easily understood in the second metal oxide step (a). Embodiments The preferred embodiments of the present invention will be described with reference to the drawings. Please refer to FIG. 3, the refrigerator structure 100-metal substrate m, a second metal substrate 120, a plurality of: a conductor 130, a plurality of N-type semiconductors 140, and a plurality of p-type semiconductors 15. . As shown in FIG. 3, the first metal substrate 110 has a first gold layer plane 112. The second metal substrate 120 is disposed under the first metal substrate and has a second metal oxide layer plane 122. Meanwhile, the first
0787-9113TWF(Nl);HAWD0NG.ptd 第8頁 569480 五、發明說明（5) 金屬氧化層平面112係相對於第二金屬氧化層平面122。金 ，導體130是焊接於第一金屬氧化層平面112以及第二金屬 氧化層平面122上。N型半導體140以及P型半導體15〇係以 交互排列之方式而設置於第一金屬氧化層平面112上之金 屬導體130與第二金屬氧化層平面][22上之金屬導體13〇之 ^在本實施例中，第一金屬基板110以及第二金屬基板 =〇質係採用鋁合金材質，而金屬導體130則可採用銅或鋁等 接下來之敘述將說明本發明之致冷器結構丨〇〇之 Γ:以及：ΐ 一金屬基板110以及第二金屬基板12。之 表^ "之方式予以清潔。#著，將清潔後之笛 (一未顯-基;1Λ以及第二金屬基板120放置於-； (未顯不）中來作陽極氧化處理，而此經 二：：槽 【：以板^以及第二金屬基板㈣分別會具：-匕 i厘:f面。/由於本實施例之第-金屬基板! i 〇以及笛屬 成严：係採用結合金材質，故此金屬氧化層表面Z 成份係為氧化鋁（Al2〇3)。然後 / ^化層表面之 金屬基板110以及第二金屬基板120 :::中取出第一 金屬基板110之一表面以及第二金 ^膠布貼覆於第一 著’再將第-金屬基板110以及第二：0,-表面。接 有氟酸或磷酸之蝕刻液中以作土板1 2 0置於一含 貼覆勝布之金屬氧化層表面部份完全1 =刻，直到其未 合金材質時，再將第一金屬基板ιι〇以/清除而仍為鋁 第二金屬基板120 $ 9頁 0787-9113TWF(Nl);HAWDONG.ptd 569480 五、發明說明（6) ' 1 從蝕刻液中取出並清洗乾淨。然後，移除貼覆於第一金屬 基板110以及第二金屬基板120上之膠布，此時第一金屬基 板110以及第二金屬基板120會分別具有一第一金屬氧化層 平面112以及一第二金屬氧化層平面122。值得注意的是， 第一金屬氧化層平面112以及第二金屬氧化層平面122之成 份仍，氧化鋁Ul2〇3)。接著，將金屬導體130焊接於第一 金屬氧化層平面112以及第二金屬氧化層平面I?〗上。最 後，再將N型半導體140以及P型半導體15〇以交互排列之方 式而設置於第一金屬氧化層平面112上之金屬導體 二金屬氧化層平面122上之金屬導趙13〇之間Ύ可完成= 第3圖所示之致冷器結構100。 經由本實施例之致冷器製作方法所製造出之致冷器結 構100，其第一金屬基板110以及第二金屬基板12〇僅在與 金屬導體130接觸之部份（亦即第一金屬氧化層平面112以 及第一金屬氧化層平面122)具有絕緣之效果，而其餘之部 份仍為鋁合金材質，故熱傳導係數或熱傳導率絕對會比習 知之陶瓷基板14a、14b高出許多，因而可使致冷器結構 1 〇 〇之冷端及熱端能更有效地被利用。同時，由於第一金 屬基板110以及第二金屬基板12〇係由鋁合金材質所製成， 故其強度及延展性亦遠高於習知之陶瓷基板Ha、14b，因 此，在封裝過程中，並不會形成微小之裂縫而使致冷器結 構1 00之使用壽命減短。此外，由鋁合金材質所製成之第 一金屬基板11〇以及第二金屬基板12〇還具有價格低廉之 點等。0787-9113TWF (Nl); HAWD0NG.ptd page 8 569480 V. Description of the invention (5) The metal oxide layer plane 112 is relative to the second metal oxide layer plane 122. The conductor 130 is soldered on the first metal oxide layer plane 112 and the second metal oxide layer plane 122. The N-type semiconductor 140 and the P-type semiconductor 150 are arranged on the first metal oxide layer plane 112 and the second metal oxide layer plane in an alternate arrangement] [22] In this embodiment, the first metal substrate 110 and the second metal substrate are made of aluminum alloy, and the metal conductor 130 can be made of copper or aluminum. The following description will explain the structure of the refrigerator of the present invention. O of Γ: and: ΐ a metal substrate 110 and a second metal substrate 12. Table ^ " way to clean. # 着 ， Place the cleaned flute (one unshown-based; 1Λ and the second metal substrate 120 in-; (not shown) for anodizing treatment, and this after two :: trough [: 以 板 ^ The second metal substrate and the second metal substrate will each have:-d i: f surface. / As the first-metal substrate of this embodiment! I 〇 and flute are strict: the combination of gold material, so the metal oxide surface surface Z component It is aluminum oxide (Al203). Then, one surface of the first metal substrate 110 and the second metal tape are attached to the first metal substrate 110 and the second metal substrate 120 ::: With the "-" metal substrate 110 and the second 0,-surface. The etching solution connected with hydrofluoric acid or phosphoric acid was used as a soil plate 1 2 0 and placed on a surface portion of the metal oxide layer containing the cloth. Completely 1 = engraved, until it is unalloyed, the first metal substrate is removed / removed while still being aluminum. The second metal substrate is 120 $ 9 0787-9113TWF (Nl); HAWDONG.ptd 569480 V. Description of the invention (6) '1 Take out from the etching solution and clean it. Then, remove the first metal substrate 110 and the second metal that are pasted. The adhesive tape on the plate 120, at this time, the first metal substrate 110 and the second metal substrate 120 respectively have a first metal oxide layer plane 112 and a second metal oxide layer plane 122. It is worth noting that the first metal oxide layer The composition of the plane 112 and the plane 122 of the second metal oxide layer is still aluminum oxide (U203). Next, the metal conductor 130 is soldered on the first metal oxide layer plane 112 and the second metal oxide layer plane I ?. Finally, the N-type semiconductor 140 and the P-type semiconductor 15 are arranged alternately on the metal conductor on the first metal oxide plane 112 and between the metal guides 13 on the metal oxide plane 122. Finished = cooler structure 100 shown in Figure 3. In the refrigerator structure 100 manufactured by the refrigerator manufacturing method of this embodiment, the first metal substrate 110 and the second metal substrate 120 are only in a portion in contact with the metal conductor 130 (that is, the first metal is oxidized). The layer plane 112 and the first metal oxide layer plane 122) have an insulating effect, and the remaining parts are still made of aluminum alloy. Therefore, the thermal conductivity or thermal conductivity will definitely be much higher than the conventional ceramic substrates 14a and 14b. The cold end and the hot end of the refrigerator structure 1000 can be used more effectively. At the same time, since the first metal substrate 110 and the second metal substrate 120 are made of aluminum alloy, their strength and ductility are also much higher than the conventional ceramic substrates Ha and 14b. Therefore, during the packaging process, No tiny cracks will be formed and the life of the refrigerator structure will be shortened. In addition, the first metal substrate 11 and the second metal substrate 120 made of an aluminum alloy material are also inexpensive.
第10頁 569480 五、發明說明（7) --- 綜上所述，經由本實施例之致冷器製作方法所製造出 之致冷器結構100 ,在與習知之致冷器結構丨一起經 後可發現，本發明之致冷器結構100不論在熱導、/ 電強度以及絕緣度之表現上均比習知之致冷器妊二 優異，實為一極具新穎性及進步性之產品。w、、、ό構1來付 雖然本發明已以較佳實施例据: 限定本發明，任何熟習此項技蓺 2 ，“其並非用以 神和範圍内’ t可作些許之更；：J不：離本發明之精 護範圍當視後附之申請專利範固；：：者=本發明之保Page 10 569480 V. Description of the invention (7) --- In summary, the refrigerator structure 100 manufactured by the refrigerator manufacturing method of this embodiment is used together with the conventional refrigerator structure 丨It can be found later that the refrigerator structure 100 of the present invention is superior to the conventional refrigerator II in terms of thermal conductivity, electrical strength, and insulation performance, which is a very novel and progressive product. w ,,,, and 1 Although the present invention has been based on a preferred embodiment: the present invention is limited, anyone familiar with this technique 2 "is not used within the scope of God and can't make a little more change: JNo: Departure from the scope of the present invention as the attached patent application; :: = the protection of the present invention
0787-9113TWF(Nl);HAWD0NG.ptd 569480 圖式簡單說明 第1圖係顯示一習知之致冷器結構之剖面示意圖； 第2圖係顯示一習知之致冷器之立體圖；以及 第3圖係顯示本發明之致冷器結構之剖面示意圖。 符號說明 1〜習知之致冷器結構 11〜N型半.導體 12〜P型半導體 13〜金屬導體 14a、14b〜陶瓷基板 1 5〜直流電源 I 0 0〜本發明之致冷器結構 II 0〜第一金屬基板 112〜第一金屬氧化層平面 120〜第二金屬基板 122〜第二金屬氧化層平面 130〜金屬導體 140〜N型半導體 150〜P型半導體 1 6 0〜直流電源0787-9113TWF (Nl); HAWD0NG.ptd 569480 Brief description of the drawings The first diagram is a schematic cross-sectional view showing a conventional refrigerator structure; the second diagram is a perspective view of a conventional refrigerator; and the third diagram is A schematic cross-sectional view of the refrigerator structure of the present invention is shown. DESCRIPTION OF SYMBOLS 1 ~ Conventional cooler structure 11 ~ N-type half. Conductor 12 ~ P-type semiconductor 13 ~ Metal conductor 14a, 14b ~ Ceramic substrate 15 ~ DC power supply I 0 0 ~ Cooler structure II 0 of the present invention ~ First metal substrate 112 ~ First metal oxide layer plane 120 ~ Second metal substrate 122 ~ Second metal oxide layer plane 130 ~ Metal conductor 140 ~ N-type semiconductor 150 ~ P-type semiconductor 16 0 ~ DC power supply
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