TW567133B - Method for micro hot embossing by pressurized gas - Google Patents

Method for micro hot embossing by pressurized gas Download PDF

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Publication number
TW567133B
TW567133B TW91118625A TW91118625A TW567133B TW 567133 B TW567133 B TW 567133B TW 91118625 A TW91118625 A TW 91118625A TW 91118625 A TW91118625 A TW 91118625A TW 567133 B TW567133 B TW 567133B
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Taiwan
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mold
pressure
gas
plastic
micro
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TW91118625A
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Chinese (zh)
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Je-Hau Jang
Shen-Yu Yang
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Univ Nat Taiwan
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Abstract

This invention provides a method for micro hot embossing by pressurized gas, comprising the steps of placing an object to be embossed are flatly above a mold, that is covered by a sealed chamber to form a sealed space; elevating the temperature until the object to be embossed reaches a thermoplastic sate; introducing pressurized gas to the object to be embossed. Hot embossing by evenly distributed pressure may be realized due to the equal-pressure distribution characteristic of gas molecules. Because gas is used to achieve hot embossing by evenly distributed pressure, the area of the hot embossing will not be limited such that such a method may be applied in directly hot embossing silicon wafers.

Description

567133 A7 B7 五、發明說明(1) 本發明係關於微結構之氣體微熱壓印成型方法’具體而言,關於以高壓 氣體直接加壓於置於模具上之待壓印標的,藉以將模具上的微結構轉印至待 壓印標的上之微熱壓印方法。 自 1990 年代以來,微機電系統(Micro-Electro-Mechanical System,簡稱 MEMS)的發展在世界各地都備受矚目,它包含了機械、光學、電子、材料、 控制、化學等多重科技的技術整合,希望利用此新的製造技術可使產品微小 化進而提高其性能、品質、可靠度及附加價值,同時降低生產成本與能源的 耗盡,使生產和生活應用更加方便。 頁 而微熱壓印法(Hot Embossing)屬微機電系統領域中之主要微結構複製 (Replication)技術,其中,微結構係指以μπι或nm為尺寸量度單位。所做出 之微結構可以直接用作零組件,或是再經過其他製程利用。因為此製程簡便 而且可使雜里製造,若能姐控纖品的成形精度及品質,可成為提高微 機電產品產能的關鍵製程之一。 以往微熱壓印製程皆係利用油壓缸、氣壓缸或馬達/螺桿加壓機構,直接 驅動壓板壓住塑膠與模具來熱壓成型。為了更瞭解本發明背景,兹將習知微 熱壓印成型裝置和方法作一說明。 *參考第6圖,習知熱齡難為首先將模具⑽_在上難舰上, 模具1〇2上方通常會再加墊-層緩衝材料(通常是石夕膠),而作為待壓印標的之 塑膠材料1〇1置放於下壓板103b處,壓板為一加熱冷卻裝請構造,此 2可用以加熱及冷卻塑膠和模具。之後由油壓缸、氣壓缸或馬達/螺桿加壓 機構⑽),直接驅動壓板壓住塑膠與模躲熱壓成型;待經過一段適當的壓 印時間,及冷卻再開模取出成品。 利用上述習知熱壓印製程方法,會有壓印力分佈不均勾,進而影響成品 太紙语廢搞田由130 m女描播/ ▲…一 567133567133 A7 B7 V. Description of the invention (1) The present invention relates to a gas micro-heat embossing method for microstructures. Specifically, the invention relates to a method in which a high-pressure gas is directly pressurized onto a mold to be imprinted on a mold, and the mold The micro-heat embossing method is used to transfer the microstructure to the target to be embossed. Since the 1990s, the development of Micro-Electro-Mechanical System (MEMS) has attracted much attention around the world. It includes the integration of multiple technologies such as machinery, optics, electronics, materials, control, and chemistry. It is hoped that by using this new manufacturing technology, products can be miniaturized to improve their performance, quality, reliability, and added value, while reducing production costs and energy consumption, and making production and life applications more convenient. Hot Embossing is the main microstructure replication technology in the field of microelectromechanical systems. Microstructure refers to the unit of measurement in μm or nm. The microstructure can be used directly as a component or used in other processes. Because this process is simple and can be made in a hybrid, if you can control the forming accuracy and quality of fiber products, it can become one of the key processes to increase the production of micro-electromechanical products. In the past, the micro-hot stamping process used a hydraulic cylinder, a pneumatic cylinder, or a motor / screw pressurizing mechanism to directly drive the pressing plate to hold the plastic and the mold for hot pressing. In order to better understand the background of the present invention, a conventional micro-heat embossing apparatus and method will be described. * Refer to Figure 6, it is known that the hot age is difficult. Firstly, put the mold on the ship. On the mold 102, a cushion-layer cushioning material (usually Shi Xijiao) is usually added as the target to be imprinted. The plastic material 101 is placed at the lower platen 103b. The platen is a heating and cooling device, and the structure 2 can be used to heat and cool plastics and molds. After that, the hydraulic cylinder, pneumatic cylinder or motor / screw pressurizing mechanism ,) directly drives the pressure plate to press the plastic and the mold to avoid hot pressing; after a certain period of embossing time has elapsed, the mold is opened and the finished product is taken out after cooling. Using the above-mentioned conventional hot stamping process method, there will be uneven distribution of the stamping force, which will affect the finished product.

經濟部智慧財產局員工消費合作社印製 的尺寸複製精度問題;且直接壓板熱壓印機構方式,在進行大面積轨壓印時, 壓力分佈問題更是-項極_的挑戰。因此,目前熱壓印面積均侷限於小尺 寸。如當前全球最大熱壓印機製造廠,德國JEN_K挪〇触恤公司之 最先進機型HEX-03,其最大熱壓印面積只有4英对。 微熱壓印顏法主要服微魏纽製造領域之巾,是姆重要的微结 構複製成麵術。崎法乃是絲崎μ嶋賊電鑄麵具上面的 微結構’以完成减度與高品質微機電成品之快速複製。此方法有優越的成 形特性,因紐概鱗低、流植編、细彡辣解且成品不容易有應 力麵曲制題,非常適合时成形光學元件或各種微細的結構。其應用領域 可分為微透鏡、微光栅、微繞射猶等微光學元件成型;微生物晶片、微通 道、微感卿賴生技·;賴、藉、微錄等微機械元件麵;微加 速規等具微電子電路與微結構之耕成型等。若配合自動化,可以提高生產 量,達到量產的目的。故熱壓印製程被認為在微機電產業中,是降低成產成 本,提高產能的關鍵製程。 微熱壓印製程基本原理為:備料、加熱、熱壓、保壓冷卻、脫模取出成 品,而完成整個製程。熱齡時歸材料之溫度必須在其玻璃轉移溫度仰挪 Transition Temperature,Tg)以上才會開始軟化,待壓板施壓下降壓住塑膠/模 具,塑膠因壓印力產生流動變形而充填微模穴。塑料充填完畢之後,必須將 溫度降至玻璃轉移溫度之下方能進行脫模。此時,溫度下降會使塑膠材料產 生收縮,因此必須維持一定之壓印力當作保壓力,讓模六内之塑料在產生收 縮之同時,能繼續有塑料充填模穴,補充塑料收縮掉的部分,俟溫度降至玻 璃轉移溫度之下脫模取出成品。 習知微熱壓印製程皆係利用油壓缸、氣壓缸或馬達/螺桿加壓機構,直接 I I I ϋ - - H - 1· - - i^^w· (請先閱讀背面之注意事頊再填寫本頁) 567133 A7 B7 五、發明說明(3) 驅動壓板壓住塑膠與模具來熱壓成型。舉例而言,當前全球最大熱壓印機製 造廠,德國JENOPTIKMikrotechnik公司所提出之美國第5,993,189號專利、 德國196,48,844號專利,都採取用壓板直接熱壓機構方式。此外,美國專利 第5,772,905號(Stephen Y· Chou等)所揭示之奈米熱壓印微成影法(H〇tThe issue of dimensional reproduction accuracy printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs; and the direct platen hot embossing mechanism method, the problem of pressure distribution is a challenge in the area of large-area rail embossing. Therefore, the current hot stamping area is limited to a small size. For example, the world's largest hot stamping machine manufacturer, Germany's JEN_K Norway, the most advanced model of the shirt company HEX-03, has a maximum hot stamping area of only 4 British pairs. The micro-hot embossing method is mainly used in the towels in the manufacturing field of Wei Wei Niu. It is an important micro-structure replication facial technique. The Saki method is the microstructure on the wire-thinning electroformed mask of the silk saki μ 嶋 thief to complete the reduction and rapid reproduction of high-quality MEMS finished products. This method has excellent forming characteristics. It has low scale, low flow rate, fine texture, and is not easy to produce stress surface problems. It is very suitable for forming optical elements or various fine structures. Its application fields can be divided into micro-lens, micro-grating, micro-diffraction, and other micro-optical element molding; microbial wafers, micro-channels, micro-sensing, Lai Biotechnology; micro-mechanical element surfaces such as Lai, Borrow, and Micro-Record; micro acceleration Regulations include microelectronic circuits and microstructures. If it cooperates with automation, it can increase the production volume and achieve the purpose of mass production. Therefore, the hot stamping process is considered to be a key process in the micro-electromechanical industry to reduce production costs and increase production capacity. The basic principle of the micro-hot stamping process is: material preparation, heating, hot pressing, pressure-holding cooling, and demoulding to take out the finished product, and complete the entire process. The temperature of the returning material must be at least its glass transition temperature (Transition Temperature, Tg) when it is hot. It will begin to soften when the pressure of the pressure plate is reduced to hold the plastic / mold. The plastic will fill the microcavities due to the flow deformation caused by the imprint force. . After the plastic is filled, the temperature must be lowered below the glass transition temperature for demoulding. At this time, the temperature drop will cause the plastic material to shrink, so it is necessary to maintain a certain embossing force as a holding pressure, so that the plastic in the mold 6 can continue to have plastic filling the mold cavity while shrinking, and supplement the plastic shrinkage. In part, the temperature is lowered below the glass transition temperature and demolded to remove the finished product. The conventional micro-hot stamping process uses hydraulic cylinders, pneumatic cylinders or motor / screw pressurization mechanisms, directly III ϋ--H-1 ·--i ^^ w · (Please read the notes on the back 顼 before filling (This page) 567133 A7 B7 V. Description of the invention (3) Drive the pressure plate to press the plastic and mold to hot press. For example, currently the world's largest hot stamping mechanism manufacturer, the US Patent No. 5,993,189 and the German Patent No. 196,48,844 proposed by JENOPTIKMikrotechnik of Germany, all adopt a direct hot pressing mechanism using a platen. In addition, the nano-imprint microlithography method (Hot) disclosed in U.S. Patent No. 5,772,905 (Stephen Y. Chou et al.)

Embossing Lithography,HEL 或稱 Nano Imprint Lithography,NIL),亦採取壓板 直接熱壓成型方式。 在熱壓印時,壓板中間處壓印力大,靠近壓板邊緣處則壓印力小。因此, 製程通常以矽膠板(Silicone Rubber)作為模具之緩衝襯墊,以緩和與平衡壓 力之影響,達到均勻之成型。然而石夕膠板容易伸張變形,且受限於固態材料 本身的伸張特性,壓印力無法達到理想均勻分佈狀態。在充填階段,壓印力 分佈的不均會導致瓣在各微模穴充填不在冷卻階段,碰壓印力的不 均則會造成塑膠收縮的不均勻,嚴重影響成品微結構轉寫後的尺寸,使微機 電成品無法達到高精度與高品質之要求。這項缺陷使得目前熱壓印製程良率 不高,複製量產功能大打折扣。 此外,隨著半導體產業技術的突飛簡,石夕製程製作面積也愈來愈大。 從早期的4对晶圓(Wafer),漸漸進展至6时、8对,甚至於當前最高階技術 之12对晶圓。晶圓面積的增加’意謂著每單位面積的製作成本降低,總體 產能的提升。而微機電系統主要是建立在石夕製程上,發展趨勢亦是朝向大面 積晶圓製作。現階段熱壓印製程技術普遍還停留在4 JENOPTIK Mikrotechnik 公司 $ 、仓拖⑷ Α Ί之最先進機型HEX-G3,其最大熱壓印面積為 吋’‘,、、壓方法仍是壓板直接壓印機構型式。目前全球學術界、產業界皆致 力於大面積的微熱壓印研究開發,本發明所揭示之 即 面積微熱壓印之進行。 '靴欠 其次,在熱壓印製程中,目前習知技術由於係採直接壓板壓印方式, _ - 6- ^紙張尺度_+_家鮮(CNS) 面 裝 訂 567133 A7Embossing Lithography (HEL or Nano Imprint Lithography, NIL) also adopts direct hot-press molding method. During hot embossing, the embossing force is large at the middle of the platen, and it is small near the edge of the platen. Therefore, the silicon rubber (Silicone Rubber) is usually used as the cushioning pad of the mold in order to alleviate and balance the influence of pressure to achieve uniform molding. However, Shixi rubber sheet is easily stretched and deformed, and due to the stretch characteristics of the solid material itself, the embossing force cannot reach the ideal uniform distribution state. In the filling stage, the uneven distribution of the embossing force will cause the flaps to not fill the cooling stage of each microcavity. The unevenness of the embossing force will cause the plastic to shrink unevenly, which will seriously affect the size of the finished microstructure after rewriting. , So that the finished micro-electromechanical products can not meet the requirements of high precision and high quality. This defect makes the current hot stamping process yield low, and the replication mass production function is greatly reduced. In addition, with the rapid development of semiconductor industry technology, the production area of Shi Xi process has also become larger and larger. From the early 4 pairs of wafers (Wafer), it has gradually progressed to 6 o'clock, 8 pairs, and even 12 pairs of wafers of the current highest-level technology. An increase in wafer area 'means a reduction in manufacturing costs per unit area and an increase in overall productivity. Micro-electro-mechanical systems are mainly based on the Shixi process, and the development trend is also towards large-area wafer fabrication. At the current stage, the hot stamping process technology is generally still at 4 JENOPTIK Mikrotechnik company, the most advanced model HEX-G3, the largest hot stamping area is inches, and the pressing method is still directly Type of embossing mechanism. At present, academia and industry all over the world are devoted to the research and development of large-area micro-heat embossing, and the present invention discloses that the micro-heat embossing is performed. 'Boots. Secondly, in the hot stamping process, the current conventional technology uses the direct platen stamping method. _-6- ^ paper size _ + _ CNS surface binding 567133 A7

當模具為雜材料(例__、賴母版),很料產生破裂情形。 因此t用作法疋财晶圓電鑄(Eleetf_ti邮翻製成職㈣疏M_,再 利用此賴進植印。但在電鑄過程中,由於是電化學反應,需要用到數量 龐大之各種重金屬電鑄酸、减,各類添加劑(例如應力消關、紐劑、濕 潤劑…等)’這些化學溶液職處理不狂昂貴,大大增加環境之負擔。此 外’電鑄製程缺陷多,如複製效率、針孔、_、表面精度、珊械、厚度 均勻性差等,尚有多項問題待解決。When the mold is a miscellaneous material (such as __, Lai master plate), it is expected that cracks will occur. Therefore, t is used as an electroforming method for wafers (Eleetf_ti is converted into a postal letter M_, which is then used to print. However, in the electroforming process, due to the electrochemical reaction, a large number of various heavy metal electroforming is required. Acids, minus, various additives (such as stress relief, buttoning agents, wetting agents, etc.) 'These chemical solutions are not expensive and expensive, which greatly increases the burden on the environment. In addition, there are many defects in the electroforming process, such as replication efficiency, needle There are still many problems to be solved, such as holes, _, surface accuracy, mechanical properties, and poor thickness uniformity.

因此,欲使微機電系統成品大量商業化生產,且能達到高精度與高品質i 之品質要求,就必須解決壓印力分佈不均及熱壓面積受限等問題。 !Therefore, if a large number of micro-electromechanical system products are to be produced commercially and can meet the quality requirements of high precision and high quality i, it is necessary to solve the problems of uneven distribution of embossing force and limited hot pressing area. !

鑑於上述習知技術之問題,本發明提供可均自分鍾力之氣雜熱壓印 成型方法。 經 濟 部 智 慧 財 產 局 員 合 作 社In view of the problems of the above-mentioned conventional techniques, the present invention provides a gas miscellaneous hot stamping molding method capable of uniform force. Member of the Intellectual Property Bureau of the Ministry of Economic Affairs

根據本發明之_目的,提供聽難觀構之氣酿髓印成型方法, 匕括下H將具有《結構的模具設於操作纟上;將待壓印標的平坦地置 於模八上及70王地遮蓋模具,待壓印標的之表面積大至足以完全遮蓋模具並 留下餘留部份足以與操作台條密接合;__蓋住健印標的之餘留部 份’而使細腔内部與位於密閉軸部之待壓印標的與模具組合—起形成封 閉空間;將麵印標的純至可雜狀_及通人高壓鐘至麵腔之封閉 空間内’ U均自地祕至該健印標社,藉崎模具上的微結 壓印標的。 根據本發.另-目的,提側於難觀構之氣舰鍾印成型方 法’用於將微結構轉印至待壓印標的的雙面上,包括叮之步驟:在操作台 上,以分獅成有所需驗結構之上模賊下模具之各麻姆立的方式, 將待壓印標的夾於其咖臟上模具/待㈣翻/下難之三明治堆叠組合 本紙張尺㈣財關^(CNS) A4規格(2版297公楚)》"According to the object of the present invention, a method for forming an air-breathing seal with an unsightly structure is provided. A mold with a structure is set on the operation pad; the target to be imprinted is flatly placed on the mold eight and 70. Wang Di covers the mold, the surface area of the target to be imprinted is large enough to completely cover the mold and leave the remaining part to be tightly connected with the operating table strip; __cover the remaining part of the health-printed label 'and make the interior of the fine cavity Combined with the mold to be imprinted on the closed shaft part to form a closed space; the pure to miscellaneous shape of the surface imprinted mark and the high-pressure clock to the closed space of the facial cavity are all secreted to the health Mark Printing Agency, embossed the mark by the micro-knot on the mold. According to the present invention, the purpose of the method is to improve the appearance of the airship clock seal, which is used to transfer microstructures to both sides of the target to be imprinted, including the step of: Dividing the lion into the mold with the required inspection structure, the mold is lowered, and the target to be embossed is sandwiched on the mold, the sandwich is stacked, and the paper is folded. Off ^ (CNS) A4 Specification (2nd Edition 297 Gongchu) ""

五、發明說明(5) mm/±m 壓印標二t將上模具及下模具上的微結侧案分職印至該待 裝 根據本發敗又另_目的,提供麵_結構之氣舰顏印方法, 包括下列步驟:在操作a卜,腺、;^士士 = ^丨> 輔⑼θ /、σ將塗佈有已硬化局分子單層之基底置於具有微 …/、上’簡具巾具有微結構的—面絲底上的高分子單體層接觸, 而幵7成模具/基底堆疊齡;將祕㈣的㈣難蓋賴具/基絲疊組合 訂 ^而$成密封膜/模具/基底之堆疊組合,密封膜之表面積大至足以完全覆 盍-明:堆疊並留下餘留部份足以與操作台緊密接合;將密閉腔蓋住密封膜 之餘留部份,而使堆疊組合完全處於密閉腔之密封空間内;將該高分子單體 層加熱至可紐狀態;及將紐氣體通人密閉腔之密封空_,以均勻地施 壓至該堆疊組合,藉崎模具的微職ffl雜印至該高好單體層。 此外,在執行熱壓印時,高壓氣體之壓力為1〇kg/cn^2〇〇kg/cm2, 熱壓進行時間為1至30分鐘。 根據本發明,在密閉空間中,使用高壓氣體以進行微熱壓印成型,可達 J元王句勻壓力为佈之狀態。藉由氣體分子之等壓分佈特性,熱壓印面積不 受限制’可進雜大面狀熱壓印,並且所製成的成品之尺寸精度優良。 此外,根據本發明,由於使用氣體加壓,可免除習知的壓板機構直接加 壓方式,因此可直接壓印矽晶圓,無須再將矽晶圓翻製成電鑄鎳模具,可簡 本紙航㈣用中國國家標準(CNS) A4規格(21Gx297公爱) 經濟部智慧財產局員工消費合作社印製 567133 五、發明說明(6) 化製程並降低成本 ΜΛΜΜ 在參考附圖之下述說明中,本發明的上述及其它目的、優點、及特徵將 更加清楚呈現,其中,圖1(a)至1(d)是示意圖,用以說明依據本發明之氣體 微熱壓印成型方法的操作之第一 實施例。 圖2(a)至2(d)是示意圖,用以說明依據本發明之氣體微熱壓印成型方法 的操作之第二實施例。 圖3(a)至3(e)是示意圖,用以說明依據本發明之氣體微熱壓印成型方法 的操作之第三實施例。 圖4(a)至4(e)是不意圖,用以說明依據本發明之氣體微熱壓印成型方法 的操作之第四實施例。 圖柳至5⑻是示意圖,用以說明依據本發曰月之氣體微熱壓印成型方法 的操作之第五實施例。 圖6係顯示習知的微熱壓印實施例。 主要元件對照表 1待壓印標的 2模具 2a上模具 2b下模具 3 塑膠板 -9 - 本紙張尺度適G關家標準(CNS) A4規格(21GX297公餐)〜' -----— --------t·-----IT------ (請先閱讀背面之注意事項再填寫本頁) 567133 A7 B7 五、發明說明(7) 4 待壓印層 5 基底 8 密封膜 經濟部智慧財產局員工消費合作社印製 10 加熱冷卻盤 12 密閉腔 14 管路 16 壓力控制閥 18 高壓氣體壓縮機 101 待壓印標的 102 模具 103a 上壓板 103b 下壓板 105 加熱冷卻裝置 106 加壓機構 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公釐) 567133 、發明說明(8) 經濟部智慧財產局員工消費合作社印製 較佳實施例詳述: 圖1(a)至1(d)係顯示根據本發明之氣體微熱壓印成型方法之第一實於 例。如圖1⑻所示,預先將作為待壓印標的之諸如塑膠膜材料的膜) 置放於具有預定微結構之模具2上,以模具2具有微結構之一面與待样 的相接觸。如此形成之塑膠/模具之堆疊組合係設在作為操作台之加熱冷卻^ 10上’此加熱冷卻盤可用以加熱及冷卻塑膠。 接著如® 1(b)所示,將一密閉腔12蓋在此塑膠/模具堆疊組合上,而與 塑膠/模具堆疊形成-賴空間,密閉腔連接至油壓或曲柄(圖上未示出)以進 行快速開合賴腔動作。此賴腔經由f路14連接至—高壓氣體壓縮機Μ 及一壓力控制閥16。 然後如® 1(c)所示,利用加熱冷卻盤1〇加熱歸,將溫度提高至該瓣 之玻璃轉祕度以上’錢戦於軟化可祕織,並_高魏體壓賴 Μ通入高壓㈣,畴經由壓力控侧將此氣歷力調雜的成型壓力 條件’舉例而s ’大約10〜2〇〇kg/cm2之氣體壓力。此時塑膠顧受壓印力而 開始模穴的充填,待-段時間後,開始進行冷卻並同時持續保壓。 當歸完成整體工件輪麼的充填後,經由壓力控制閥16將氣誠出, 再打開密閉腔,取出成品(如圖1(d)所示)。 實施例2 圖2(a)至2(d)係顯示根據本發明之氣體微熱印成型方法的第二實施例, 其除了所使用之熱壓印模具2為脆性材料(如石夕晶圓母模、玻璃母模)以及賴 -11 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公H) 讀 之 注 項 頁 裝 訂 567133 A7V. Description of the invention (5) mm / ± m imprinted label t will print the micro-junction case on the upper mold and the lower mold to the ready to be installed. According to this failure and another _ purpose, to provide the surface _ structure of the gas ship The method of color printing includes the following steps: in operation a, gland, ^ Shi = ^ 丨 > auxiliary ⑼θ /, σ to place a substrate coated with a single layer of hardened local molecules on a micro ... The simple towel has a microstructure-the polymer monomer layer on the surface of the silk is in contact, and the mold / substrate stacking age is 70%; the embarrassment of the crevice is covered by the combination of the mold / basic stack and sealed. Film / mold / base stacking combination. The surface area of the sealing film is large enough to completely cover it.-Ming: Stack and leave the remaining part to be tightly connected with the operation table. Cover the sealed cavity with the remaining part of the sealing film. The stacking assembly is completely located in the sealed space of the closed cavity; the polymer monomer layer is heated to a buttonable state; and the button gas is passed through the sealed cavity of the closed cavity to evenly press the stacking assembly. Saki mold's micro-job ffl misprints to the high-quality monomer layer. In addition, when performing hot embossing, the pressure of the high-pressure gas is 10 kg / cn ^ 200 kg / cm2, and the hot pressing time is 1 to 30 minutes. According to the present invention, in a confined space, high pressure gas is used for micro-heat embossing to reach a state where the uniform pressure of the J-yuan king sentence is cloth. By virtue of the isobaric distribution characteristics of gas molecules, the hot-embossing area is not limited ', and large-area hot-embossing can be incorporated, and the finished product has excellent dimensional accuracy. In addition, according to the present invention, the use of gas pressure can eliminate the direct pressure method of the conventional platen mechanism, so that the silicon wafer can be directly imprinted without the need to turn the silicon wafer into an electroformed nickel mold, which can simplify the paper. Aircraft uses Chinese National Standard (CNS) A4 (21Gx297 public love) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by employee consumer cooperatives 567133 V. Description of invention (6) Chemical process and reduce costs ΜΛMM In the following description with reference to the drawings, The above and other objects, advantages, and features of the present invention will be more clearly presented. Among them, FIGS. 1 (a) to 1 (d) are schematic diagrams for explaining the first operation of the gas micro-hot embossing method according to the present invention. Examples. Figs. 2 (a) to 2 (d) are schematic views for explaining a second embodiment of the operation of the gas micro-hot stamping method according to the present invention. Figs. 3 (a) to 3 (e) are schematic views for explaining a third embodiment of the operation of the gas micro-hot stamping method according to the present invention. Figs. 4 (a) to 4 (e) are not intended to illustrate the fourth embodiment of the operation of the gas micro-hot stamping method according to the present invention. Figures 5 to 5A are schematic views for explaining the fifth embodiment of the operation of the gas micro-hot stamping method according to the present invention. Fig. 6 shows a conventional micro-embossing embodiment. Main component comparison table 1 2 molds 2a upper mold 2b lower mold 3 plastic plate-9 to be embossed-This paper size is suitable for G family standard (CNS) A4 specification (21GX297 meal) ~ '------- ------- t · ----- IT ------ (Please read the precautions on the back before filling this page) 567133 A7 B7 V. Description of the invention (7) 4 Layer to be imprinted 5 Substrate 8 Sealing film Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 Heating and cooling plate 12 Closed cavity 14 Pipe 16 Pressure control valve 18 High-pressure gas compressor 101 Target to be imprinted 102 Mold 103a Upper plate 103b Lower plate 105 Heating and cooling device 106 Pressurizing mechanism (please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210x297 mm) 567133, invention description (8) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Detailed description of the preferred embodiment: Figures 1 (a) to 1 (d) show the first practical example of the gas micro-hot stamping method according to the present invention. As shown in FIG. 1 (a), a film such as a plastic film material as a target to be imprinted is placed on a mold 2 having a predetermined microstructure in advance, and one side of the mold 2 having the microstructure is in contact with the sample to be sampled. The thus-formed plastic / mold stack combination is set on the heating and cooling ^ 10 as an operation table. This heating and cooling plate can be used to heat and cool plastic. Then, as shown in ® 1 (b), a closed cavity 12 is covered on this plastic / mold stack combination, and the plastic / mold stack is formed to form a Lai space, and the closed cavity is connected to an oil pressure or a crank (not shown in the figure) ) For quick opening and closing. This cavity is connected to a high-pressure gas compressor M and a pressure control valve 16 via a f-way 14. Then, as shown in ® 1 (c), use a heating and cooling plate to heat it up and increase the temperature to above the degree of glass transition of the petals. At a high pressure, the molding pressure conditions of this aerodynamic force mixed by the pressure control side are exemplified and the gas pressure is about 10 to 200 kg / cm2. At this time, the plastic starts to fill the cavity depending on the embossing force, and after a period of time, it starts to cool and continues to maintain the pressure. After the angelica has completed the filling of the entire workpiece wheel, the air is blown out through the pressure control valve 16, and then the closed chamber is opened to take out the finished product (as shown in Fig. 1 (d)). Embodiment 2 Figures 2 (a) to 2 (d) show a second embodiment of the gas micro-hot stamping method according to the present invention, except that the hot stamping mold 2 used is a brittle material (such as a stone xi wafer mother) Mold, glass master mold) and Lai-11 This paper size is applicable to China National Standard (CNS) A4 (210x297mm H) Note page binding 567133 A7

裝 訂 567133 A7Binding 567133 A7

經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 人此時塑膠膜1因受壓印力而開始模穴的充填,待一段時間後,開始進行 冷部並同時持續保壓。祕壓時間,較佳地在㈣分鐘。此外,密封膜 玻璃轉換溫度健地高_祕壓印_之塑賴丨的_轉印溫度。 、在整體微結構輪廓完整地轉印於塑膠膜【後,經由壓力控制閥π將 體/¾出’再打開賴腔12,取出成品(如圖⑽所示)。 實施例4 圖4(a)-4(e)係顯示根據本發明之第四實施例,其係將微結構元件模製於 板狀標的上。如圖4⑻所示,預先將作為待壓印標的之娜板3(舉例而古, PMMA板)置放於具有微結構之模具2上,與模具2之具有微結構的__ 接觸,並將成之瓣板/模具之堆疊齡齡__加齡雜iQ上,此加 熱冷卻盤10可用以加熱及冷卻塑膠。 σ 接著’如圖4(b)所示,再將一片密閉膜8平鋪在此塑膠板/模具堆疊組合 之上,而形成了密封膜/塑膠板/模具之三層堆疊組合。此密封膜的功能係用來 配合密閉腔進行板件微結構元件之氣體微熱壓印成型。 接著如圖4(c)所示,將一密閉腔12蓋住此三層堆疊組合,使其成為一密 閉空間,額腔12連接至賴或曲柄(圖上未示出)錢行快速開合密閉腔動 作。此密閉腔經由管路14連接至一高壓氣體壓縮機18及一壓力控制閥16。 然後如圖4(d)所示,利用加熱冷卻盤1〇加熱塑膠板3,將溫度提高至該 塑膠板之玻璃轉移溫度以上,使瓣板處於軟化可麵,並侧高壓氣 體壓縮機18通人縫氣體,同雜由壓力控綱16以將此氣顏力調至塑 膠板3的成型壓力條件,舉例而言,大約1〇〜2〇〇kg/cm2之氣體壓力。此時塑The staff of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives at this time began to fill the cavity of the plastic film 1 due to the embossing force. After a period of time, the cold part was started and the pressure was maintained. The secret pressure time is preferably in a minute. In addition, the sealing film has a glass transition temperature that is robustly high. 2. After the outline of the entire microstructure is completely transferred to the plastic film, the body / ¾ out through the pressure control valve π and then open the cavity 12, and take out the finished product (as shown in Figure ⑽). Embodiment 4 Figs. 4 (a) -4 (e) show a fourth embodiment according to the present invention, in which a microstructure element is molded on a plate-shaped target. As shown in FIG. 4 (a), the Na plate 3 (for example, PMMA plate) as the target to be imprinted is placed on the mold 2 with microstructure in advance, and it is in contact with the microstructure __ of the mold 2, and The stacking age of the completed flap plate / mold is __ plus age, and the heating and cooling plate 10 can be used to heat and cool plastic. σ Next ', as shown in FIG. 4 (b), a piece of airtight film 8 is laid on this plastic plate / mold stack combination to form a three-layer stack combination of sealing film / plastic plate / mold. The function of the sealing film is to cooperate with the closed cavity to perform gas micro-heat embossing of the plate micro-structure elements. Next, as shown in FIG. 4 (c), a closed cavity 12 is covered by the three-layer stacking combination to make it a closed space. The frontal cavity 12 is connected to a Lai or crank (not shown in the figure). Closed cavity action. The closed chamber is connected to a high-pressure gas compressor 18 and a pressure control valve 16 via a pipeline 14. Then, as shown in FIG. 4 (d), the plastic plate 3 is heated by a heating and cooling plate 10, and the temperature is increased above the glass transition temperature of the plastic plate, so that the flap plate is softened and the high-pressure gas compressor 18 is turned on. The human sewing gas is controlled by the pressure control program 16 to adjust the facial strength to the molding pressure condition of the plastic plate 3, for example, a gas pressure of about 10 to 200 kg / cm2. At this time

Order

-13- 567133 B7 五、發明說明(11) 2受壓印力而開始模穴的充填,待__段時間後,開始進行冷卻並同時持 續 當塑膠板3完成整體工件輪廓的充填後,經由壓力控制閥%將氣體泡 出,再打開密閉腔12,取出成品(如圖4(e)所示)。 八/-13- 567133 B7 V. Description of the invention (11) 2 After the embossing force starts to fill the cavity, after __ some time, cooling will be started and at the same time, when the plastic plate 3 completes the filling of the overall workpiece contour, The pressure control valve% blows out the gas, and then opens the closed chamber 12 to take out the finished product (as shown in FIG. 4 (e)). Eight/

tMM 頁 訂 圖5(a)至5(e)係顯示根據本發明的氣體微熱壓印成型方法之第五實施 例。如圖5(a)所示,預先將例如光阻等高分子單體塗佈於例如碎晶圓等基底$ 上,再加以烘烤硬化而形成待壓印層4,然後將具有微結構之模具2的一面 置於待壓印層4上’成為模具/⑦晶組合。將鱗疊組合置放在一加敎 冷卻盤上1G,加熱冷卻盤H)可用以加熱及冷卻基底5上之待壓印層4。… 接著’如圖5(b)所示’再將-片密閉膜8平鋪在此模具/石夕晶圓堆疊组合 之上,而形成了密封臟具/基底之層狀堆疊組合。此密封膜的功能係用來配 合密閉腔進行氣體微熱壓印。 再來,如圖5⑷所示,將一密閉腔12蓋住此層狀堆疊組合,使其成為一 損工間,迷閉腔Π連接至油壓或曲柄(圖上未示出)以進行快速開合密閉腔 12動作。此密閉腔12經由管路14連接至一高壓氣體壓縮機18及一壓力控 制閥16。 然後如圖5(d)所示,利用加熱冷卻盤1〇加熱待壓印層4,將溫度提高至 該待壓印層4之玻璃轉移溫度以上,使該待壓印層4處於軟化可塑性狀態, 消 並利用兩麼氣體屢縮機18通入高遷氣體,同時經由勤控制閥16以將此氣 體麼力调至待屢印層4的成型麼力條件,舉例而言,大约1〇〜2〇〇kg/cm2之氣 -14- >紙張尺度適用_國@家標準(CNS) A4規格(210x297公H ) 經濟部智慧財產局員工消費合作社印製 567133 A7 明說明(12) ' ' -------- 體壓力。此時待壓印層4受壓印力而開始模穴的充填,待一段時間後, 開始進行冷卻並同時持續保壓。 、 當模具2上的整體微結構輪廓完全轉印至待壓印層4上後,經由壓力控 制閱16將氣體茂出,再打開密閉腔,取出成品(如圖5⑹所示)。 雖然上述中以較佳實施例說明本發明,但是,其僅作為說明之用並非用 以限定本發明,任域悉此雛藝者,在不馨本發明之精神和範圍内,可 對上述實施_改變及修改,本發明之範_後附之巾請專利範圍所界定者 為準。 舉例而言,依據本發明,進行氣體微熱壓印成型所使用的氣體為空氣, 或其它惰性氣體(如氬氣、氮氣等),或這些氣體的混合氣體。 舉例而言,待壓印標的除了塑膠模、塑膠板、光阻等高分子單體外,尚 可使用例如射|、金等金射g。此外,本說明#中所指的娜板係指厚度 0.2mm以上,塑膠膜係指厚度〇 2 mm以下。又 舉例而言,本發明所使用的微熱壓印模具(母版,Master)包括:經由微 機械微加工之模具、經由矽製程製作出之矽晶圓母版模具(舉例而言,4吋、 6吋、8吋、12吋或更大皆可)、電鑄翻製鎳模具、玻璃基板模具、或其他經 由各種微細加工之微模具等。 本發明之特徵及其優點摘要如下: 1·根據本發明之氣體微熱壓印成型方法,使用氣體直接對待壓印標的 進行微熱壓印成型,而不需要任何其它致動器及/或施壓機構。由 於氣體分子之等向性、等壓性壓力分佈特性,可達到完全均勻壓力 -15- 本紙張尺度適財關家鮮(CNS) A4規格(21GX297公髮) ---- I I I ϋ - I - - - - (請先閱讀背面之注意事項再填寫本頁) 567133 、發明說明(13) 分佈之微熱壓印成型。 2.根據本個之紐微髓印翻妓,可制完全均勻壓力 之進步效果。且氣體之等壓分佈特性,因此熱壓印面積不3 制,可進行極大面積之熱壓印(例如4吋、6吋、8吋、12吋又 上等皆可)。 "^ 3. 相較於以往熱壓印習用技術,根據本發明之氣體微熱壓印成型方 法’在製程上由於使用氣體加壓,可免除傳統壓板機構直接加壓方 j,因此可直接壓神晶圓’無須再财晶圓翻製成電鑄模具。可 簡化製造步驟,降低成本,並兼具環保性、清潔性及節省能源。 4. 根據本發明之腫微髓印麵綠,可鱗進行雙面微結構熱壓 印成型,製程彈性大。 5. 相較於習用之微熱壓印技術,根據本發明之氣體微熱壓印成型方 法,在製程上可避免使用價格昂貴、功能受限、機器設計複雜、保 養不易之熱壓印成型機。 面 之 注 項 訂 線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公釐)tMM page order Figures 5 (a) to 5 (e) show a fifth embodiment of the gas micro-hot stamping method according to the present invention. As shown in FIG. 5 (a), a polymer monomer such as a photoresist is coated on a substrate $ such as a broken wafer in advance, and then baked and hardened to form a layer 4 to be imprinted. One side of the mold 2 is placed on the layer 4 to be embossed to become a mold / crystal combination. The scale stack is placed on a 1G cooling plate 1G, and the heating and cooling plate H) can be used to heat and cool the layer 4 to be imprinted on the substrate 5. … Then, as shown in FIG. 5 (b), a sheet of the sealing film 8 is laid on this mold / shixi wafer stacking assembly to form a layered stacking assembly of sealing tools / bases. The function of this sealing film is to match the closed cavity for gas micro-heat embossing. Then, as shown in FIG. 5 (a), a closed cavity 12 is covered by this layered stacking combination to make it a damaged workshop. The closed cavity Π is connected to an oil pressure or a crank (not shown in the figure) for quick operation. Opening and closing the closed cavity 12 moves. The closed chamber 12 is connected to a high-pressure gas compressor 18 and a pressure control valve 16 via a pipeline 14. Then, as shown in FIG. 5 (d), the heating and cooling plate 10 is used to heat the layer 4 to be imprinted, and the temperature is increased above the glass transition temperature of the layer 4 to be imprinted, so that the layer 4 to be imprinted is in a soft and plastic state. Use two gas repetitive shrinking machines 18 to pass in high-moving gas, and at the same time, adjust the gas force to the molding condition of the repeated printing layer 4 through the control valve 16. For example, about 10 ~ -20kg / cm2 of gas-14- > Paper size applicable_ 国 @ 家 标准 (CNS) A4 size (210x297 male H) Printed on 567133 A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (12) '' -------- Body pressure. At this time, the embossing layer 4 is subjected to embossing force to start filling of the cavity. After a period of time, cooling is started and the pressure is continuously maintained. When the overall microstructure outline on the mold 2 is completely transferred to the layer 4 to be imprinted, the gas is blown out through the pressure control 16 and then the closed cavity is opened to take out the finished product (as shown in Figure 5). Although the present invention has been described with the preferred embodiments, it is for illustrative purposes only and is not intended to limit the present invention. Anyone who knows this young artist can implement the above-mentioned implementation within the spirit and scope of the present invention. _Changes and modifications, the scope of the present invention_ The attached towel is subject to the scope of the patent. For example, according to the present invention, the gas used for performing gas micro-hot stamping is air, or other inert gas (such as argon, nitrogen, etc.), or a mixture of these gases. For example, in addition to high molecular monomers such as plastic molds, plastic plates, and photoresistors to be imprinted, gold shots such as | and gold can also be used. In addition, the Na plate referred to in this description # means a thickness of 0.2 mm or more, and the plastic film means a thickness of 0 2 mm or less. For another example, the micro-hot stamping mold (master) used in the present invention includes: a micro-machined micro-machined mold, and a silicon wafer master mold (for example, a 4-inch, 6-inch, 8-inch, 12-inch or larger), electroformed nickel molds, glass substrate molds, or other micro-molds through various micro-processing. The features and advantages of the present invention are summarized as follows: 1. According to the gas micro-hot embossing method of the present invention, gas is used to directly perform micro-hot embossing on an imprint target without any other actuator and / or pressure mechanism. . Due to the isotropic and isobaric pressure distribution characteristics of gas molecules, a completely uniform pressure can be achieved. -15- This paper is suitable for CNS A4 specifications (21GX297). ---- III ϋ-I- ---(Please read the notes on the back before filling out this page) 567133 、 Instructions of the invention (13) Micro hot stamping of the distribution. 2. The prostitutes printed on the basis of this nucleus can produce a progress effect of completely uniform pressure. And the isobaric distribution characteristics of the gas, so the hot embossing area is not 3, and can be hot embossing with a very large area (for example, 4 inches, 6 inches, 8 inches, 12 inches and superior). " ^ 3. Compared with the conventional hot stamping customary technology, the gas micro-hot stamping method according to the present invention 'uses gas pressure in the manufacturing process, which can eliminate the direct pressing method of the traditional platen mechanism, so it can be directly pressed. "God Wafers" no longer need to be turned into wafers for electroforming. It simplifies manufacturing steps, reduces costs, and is environmentally friendly, clean, and energy efficient. 4. According to the invention, the printed surface of the swollen micro-medullary is green, and the double-sided micro-structure hot stamping can be performed on the scale, and the process has great flexibility. 5. Compared with the conventional micro-heat embossing technology, the gas micro-heat embossing method according to the present invention can avoid the use of a hot embossing molding machine that is expensive, has limited functions, has a complicated machine design, and is difficult to maintain. The above items are printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size is applicable to China National Standard (CNS) A4 (210x297 mm).

Claims (1)

567133 修正曰: 川泠> 六、申請專利範圍 .一種用於模製微結構的氣體微熱壓印成型方法,在密閉室内,在設於模具 上的待’標的被加熱至軟化可塑狀態時,直接施堡至該待魔印標的與該 模具开y成之組合’以將該模具上的微結構轉印至該待壓印標的,其特徵在 於:該待壓印標的將該賴室内分隔成第—及第二空間,該模具與該待壓1請 下的之、、且5處於第—空間内,在第—空間内施加高壓氣體,以該高壓总 體直接施駐鱗取卩標_雜狀組合,不触任何施麵觀壓至I 該待壓印標的與該模具之組合。 旧 示 2.如申β專利補第丨項所述之方法,其巾,在該高壓紐壓力為iGkg/cm2 || 至200kg/cm2下,執行熱壓印1至3〇分鐘。 3. 如申请專她圍第i項所述之方法,其巾該待壓印標的為塑 4·如申#專利範圍第3項所述之方法,其巾該瓣膜厚度在 mm之範圍中。 膠膜。 0.025mm 至 〇·2 訂 5·如申#專利細第丨項所述之方法,其中該待壓印標的為金屬箱。 6·如申請專利範圍第w所述之方法,其中該高壓氣體係選自空氣、惰性氣 體、氮氣及它們的混合氣體所組成的群類之一。 7· 種用於模製微結構喊體微熱壓印成型方法,在密閉室内,密封膜、模 具組、與待壓印標的形成待壓印組合,當該待壓印標的被加熱至軟化可塑 狀L =直接崎至該待壓印組合,以將賴具組上的微結構轉印至該待 壓印“的,其特徵在於:該密封膜將該密閉室分隔成第一及第二空間,該 壓印配置處於第二空間内,在第_空間誠加高壓氣體,以該高壓氣體直 567133 、申請專利範圍 A8 B8 C8 D8 修正日:民國91年9月9日 10. 接碰至該待壓印組合’不藉由任何施壓機構施壓至該待壓印組合。 8·如申請專利細第7項所述之方法,其中,賴具組係由兩分綱上及下 模具組成,鱗壓印標祕設於該上及下模具之間,以致於該待壓印標 的之上下兩表面分別與上及下模具設有微結構的面向接觸。 9.如申請專利細第7及8項中任—項所述之方法,其中,在該高壓氣麵 力為lOkgW至200kg/cm2下,執行熱壓印】至3〇分鐘。 tr專利瓣8嫩,徽杨㈣娜卩標的為塑 膠膜。 面 之 注 項 再 填 寫 本 頁 π. ^申請專利範圍第10項所述之方法,其中該塑膠膜厚度在〇奶 1之範圍中。 0.2 至 訂 塑 嫩則觸壓印_ 經 濟 部 智 慧 財 產 局 員 法,其中該待壓印標的為塗 认=請專利範圍第7及8項中任_項所述之方法,其中該待壓印標的為金 14.如申請專利範圍第7及8項+任_項所述之 敷在基底上且固化的兩分子單體層 費 合 作 社 15.如申請專利細第14項所述之方法,其中該基底為 選自矽晶圓、玻璃 &張尺度_中關家鮮(CNS) A4規格 567133 A8 B8 C8 D8 修正日:民國91年9月9日 六、申請專利範圍 塑膠板組成的群類之一 16.如申請專利範圍第7及8項中任一項所述之方法,其中該密封膜為塑膠膜< 17.如申請專利範圍第7及8項中任一項所述之方法,其中該密封膜為金屬箔| 18.如申請專利範圍第7及8項中任一項所述之方法,其中該高壓氣體選自空 氣、惰性氣體、氮氣及它們的混合氣體所組成之群類之一。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 9- 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公釐)567133 Amendment: Chuan Ling> Application scope of patent. A gas micro-heat embossing molding method for molding microstructures. In a closed room, when the target to be marked on the mold is heated to a softened and plastic state, Directly applying a castle to the combination of the mark to be printed and the mold to form a combination of 'y' to transfer the microstructure on the mold to the mark to be imprinted, which is characterized in that: In the first and second spaces, the mold and the one to be pressed 1 and 5 are in the first space, a high-pressure gas is applied in the first space, and the high pressure is directly applied to the scales to take the mark. Miscellaneous combination, do not touch any surface pressure to I The combination of the target to be imprinted and the mold. The old method 2. According to the method described in the patent application No. 丨, the towel is subjected to hot embossing for 1 to 30 minutes at the high pressure button pressure of iGkg / cm2 || to 200 kg / cm2. 3. According to the method described in item i of the application, the towel to be embossed is plastic. 4. The method described in item 3 of the patent # patent range, and the thickness of the valve in the towel is in the range of mm. Film. 0.025mm to 〇 · 2 order 5 · The method described in item # 1 of the application #patent, wherein the target to be embossed is a metal box. 6. The method according to claim w of the patent application scope, wherein the high-pressure gas system is selected from one of the group consisting of air, inert gas, nitrogen and their mixed gas. 7. · A method for moulding microstructure shouting micro-hot embossing. In a closed room, a sealing film, a mold set, and a mark to be imprinted are formed to be imprinted. When the mark to be imprinted is heated to soften the plastic shape L = directly from the combination to the to-be-embossed to transfer the microstructure on the set to the to-be-embossed ", characterized in that the sealing film separates the closed chamber into first and second spaces, The imprint configuration is located in the second space. The high-pressure gas is added in the first space. The high-pressure gas is 567133 and the scope of patent application is A8 B8 C8 D8. Amendment date: September 9, 91 10. The "embossing combination" does not apply pressure to the to-be-embossed combination by any pressure applying mechanism. 8. The method described in item 7 of the patent application, wherein the reliance group is composed of two subdivision upper and lower molds, The scale embossing mark is secretly arranged between the upper and lower molds, so that the upper and lower surfaces of the mark to be embossed are respectively provided with microstructured facing surfaces of the upper and lower molds. Any of the items—the method according to the item, wherein the surface pressure at the high pressure is 10 kgW to 2 At 00kg / cm2, perform hot embossing] to 30 minutes. Tr patented petals 8 tender, the emblem of Yang Yangna is plastic film. Please fill in this page for the note items above. Method, where the thickness of the plastic film is in the range of 0 milk 1. 0.2 to the tender plastic touches the imprint _ member law of the Intellectual Property Bureau of the Ministry of Economic Affairs, where the target to be imprinted is painted = please patent No. 7 and 8 The method described in any one of the items, wherein the target to be imprinted is gold 14. The two-molecule monomer layer cooperative which is applied to the substrate and cured as described in the application scope of items 7 and 8 + any_ item 15. The method as described in item 14 of the patent application, wherein the substrate is selected from the group consisting of silicon wafers, glass & Zhang scale_Zhongguanjiaxian (CNS) A4 specification 567133 A8 B8 C8 D8 Revision date: the year of the Republic of China September 9th, one of the groups consisting of plastic plates covered by the patent application 16. The method described in any one of items 7 and 8 of the patent application scope, wherein the sealing film is a plastic film < 17. The method according to any one of claims 7 and 8, wherein the sealing film Is a metal foil | 18. The method according to any one of items 7 and 8 of the scope of patent application, wherein the high-pressure gas is selected from one of the group consisting of air, inert gas, nitrogen, and a mixture thereof. Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 9- This paper size applies to China National Standard (CNS) A4 (210x297 mm)
TW91118625A 2002-03-20 2002-08-16 Method for micro hot embossing by pressurized gas TW567133B (en)

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