TW564534B - Chip carrier - Google Patents
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- TW564534B TW564534B TW091123547A TW91123547A TW564534B TW 564534 B TW564534 B TW 564534B TW 091123547 A TW091123547 A TW 091123547A TW 91123547 A TW91123547 A TW 91123547A TW 564534 B TW564534 B TW 564534B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
Description
564534 ———一丨關丨 , 五、發明說明(1) 【發明領域 本發明係關於一種晶片承載件,太批 導體晶片電性連接至基板背面之 適用於將半 丨封裝件之晶片承载件。 卸衣之球柵陣列式半導體 【發明背景】:564534 ——— 一 丨 Off 丨, V. Description of the invention (1) [FIELD OF THE INVENTION The present invention relates to a wafer carrier, which is a wafer carrier for electrically connecting too many conductor wafers to the back of a substrate and suitable for semi-packages. . Undressing Ball Grid Array Semiconductor [Background of the Invention]:
球柵陣列(Ball Grid Array BGA) A 導體封裝技術,其特點在於採用一基板i;:;;進的半 片“,該基板背面植置上複數個;::;以= (Solder Balls) , .7 M i ^ ^ w丨平夕丨』排列之銲球 I性連接至外部之印刷電^板。。、v將封裝結構銲結及電 第3圖即顯示一典型之球柵陣 20之正面2Ga上,兮日、2tA 1 其係安置於基板 | t ^ m ; 0亥日日片21具有一作用表面210及一相對夕 212 Λ面Λ",?亥作用表面210上形成有複數個銲墊 一對一以方^料^個銲球24,其係植接於基板20背面20b並以 對方式對應於各晶片銲墊2 1 2。習用之曰只雷w:、击, 方法係將半導體晶片21上之晶片銲墊212, ^由銲線f接 銲線墊2 04 ( Finger)、導電跡線2〇1( Trace)、導電二 =20 3 ( Vlas)以及銲球墊(Ban pad)(未圖示 ^ 性連接至其對應之銲球24上(惟第4圖及以下圖式均為= 之示:圖式而僅以示意方式說明本發明之封裝結構, I只顯示與本發明有關之元件,實際實施時之各元件數 |目、形狀、佈局以及尺寸比例可能更為複雜)。 16955.ptd 第6頁 564534 五、發明說明(2) 第4圖係顯示球栅陣列式半導體封裝件之一種基板電 路佈局型態。如圖所示,此基板電路佈局係用以將複數個 銲墊(此處僅顯示出四個銲墊,其標號分別為2 1 2 A, 2 1 2 B,2 1 2 C,2 1 2 D)電性連接至相對應之銲球(此處僅以 四個鲜球24A, 24B, 24C, 24D表示)。習知晶片電性連接 方法首先係設置複數個銲線塾(F i n g e r)於半導體晶片2 1 之旁側,並藉由銲線2 3 A, 2 3 B,2 3 C, 2 3 D分別電性連接至 銲線墊204A,204B,204C,204D,再透過複數個導電貫孔 203A, 203B, 203C, 203D穿透基板20而電性導接至基板2〇 背面2 0 b相對應之銲球上。Ball Grid Array BGA A-conductor packaging technology, which is characterized by the use of a substrate i;: ;; into the half piece ", the substrate is mounted on the back of a plurality of; ::; with = (Solder Balls),. 7 M i ^ ^ w 丨 平 夕 丨 ”The solder balls arranged in a row are connected to the external printed electrical board., V The package structure is soldered and electrically connected. Figure 3 shows the front of a typical ball grid array 20. On 2Ga, XiRi and 2tA1 are placed on the substrate | t ^ m; 0Hirri film 21 has an active surface 210 and an opposite 212 Λ plane Λ ", a plurality of welds are formed on the Haier surface 210. The pads are one-to-one and one-to-one solder balls 24, which are implanted on the back surface 20b of the substrate 20 and correspond to the wafer pads 2 1 2 in a paired manner. Conventionally, only thunder w :, hit, the method is The wafer pad 212 on the semiconductor wafer 21 is connected to the bonding wire pad 2 04 (Finger), the conductive trace 20 (Trace), the conductive two = 20 3 (Vlas), and the solder ball pad (Ban pad). ) (Not shown) is connected to its corresponding solder ball 24 (however, Figure 4 and the following figures are shown as =: the diagram illustrates the packaging structure of the present invention only in a schematic way, I only shows Show the elements related to the present invention, the actual number of each element | mesh, shape, layout and size ratio may be more complicated.) 16955.ptd Page 6 564534 V. Description of the invention (2) Figure 4 shows the ball A type of substrate circuit layout for a gate array semiconductor package. As shown in the figure, this substrate circuit layout is used to place a plurality of pads (here only four pads are shown, and their numbers are 2 1 2 A , 2 1 2 B, 2 1 2 C, 2 1 2 D) are electrically connected to the corresponding solder balls (here only represented by four fresh balls 24A, 24B, 24C, 24D). Known chip electrical connection Firstly, a plurality of bonding wires (Finger) are arranged beside the semiconductor wafer 21, and the bonding wires 2 3 A, 2 3 B, 2 3 C, and 2 3 D are electrically connected to the bonding pads respectively. 204A, 204B, 204C, and 204D, and then through a plurality of conductive through holes 203A, 203B, 203C, and 203D penetrate the substrate 20 and are electrically connected to the solder balls corresponding to the back surface 20b of the substrate 20.
由弟4圖所示之基板電路佈局可知,所有的録線墊均 是藉由連續性導電跡線201 A, 20 1B, 20 1C, 201 D而分別電 性連接至其相對應之導電通孔203A, 203B,203C,203D 上’以使各晶片銲墊2 1 2 A, 2 1 2 B, 2 1 2 C, 2 1 2 D能與其對應 銲球24A, 24B, 2 4C, 24D之間產生電性連結關係。 然而此種連續性導電跡線互不干擾的型態在電路佈局 上僅係一理想狀態。實際上該基板進行電路佈局時往往^ 生線路交又(Cross)而出現跡線阻障(TraceAs can be seen from the circuit layout of the substrate shown in Figure 4, all of the wire recording pads are electrically connected to their corresponding conductive vias through continuous conductive traces 201 A, 20 1B, 20 1C, and 201 D, respectively. 203A, 203B, 203C, and 203D so that each wafer pad 2 1 2 A, 2 1 2 B, 2 1 2 C, 2 1 2 D can be generated between its corresponding solder balls 24A, 24B, 2 4C, 24D Electrical connection relationship. However, this type of continuous conductive traces that do not interfere with each other is only an ideal state in circuit layout. In fact, the circuit layout of the substrate often results in trace obstruction (Cross).
I n t e r ρ 〇 s i t i ο η)問題。如第5圖所示,若假設銲線塾2 〇 4 A 係對應至銲球2 4 B,而銲線墊2 0 4 B係對應至銲球2 4 A,則在 此情況下,銲線墊2 0 4 A與其對應之導電貫孔2 〇 3B (視同銲 球2 4 B位置)之間須設置一連續性導電跡線2 〇丨八來連接兩 者。但如圖所示,銲線墊2 0 4B與導電貫孔2 0 3A之間原已佈 有至少一導電跡線(如導電跡線2 〇 1 B),因此欲在該銲線I n t e r ρ 〇 s i t i ο η) problem. As shown in Fig. 5, if it is assumed that the bonding wire 〇2 〇4 A corresponds to the solder ball 2 4 B, and the bonding pad 2 0 4 B corresponds to the solder ball 2 4 A, in this case, the bonding wire A continuous conductive trace 2 0 8 must be provided between the pad 2 4 A and its corresponding conductive through hole 2 0 3B (as the position of the solder ball 2 4 B) to connect the two. However, as shown in the figure, at least one conductive trace (such as the conductive trace 2 0 1 B) has been originally arranged between the bonding pad 20 4B and the conductive through hole 230 3A.
564534 五、發明說明(3) 墊2 0 4B與導電貫孔2 0 34之間設置連續性導電跡 導電跡線2 0 1 A勢必會與其他導電跡線交叉而無 0 1八時’ 性導電跡線來相互連接。 ’核用連續 弟6圖即為上述問題提供一種習知解決方法。 ^ 原有基板下方實施電路佈局時多加一電路層(c丨γ其係在 Layer)來佈線,以將交叉的線路經由下層電路曰 球來避開線路交又情形。如圖所示,先備一 至鲜 板當作基板3 0,該基板3 〇具有兩層以上之基板二上刷1路 , 0 土板30’經過圖案化(pat terned)形成夕玫、曾 跡線30 1’後,透過至少一導電貫孔3〇3,將上層二二=、 3 0 1 ’引導至下層美杯q n ",真責丁思道 | 電亦線 AP & 下層導電貫孔3〇3,,連結至 基板30月面之銲球34八上。是以,受到連續性導 Γ丄304B與其相對應之銲球3“間,便能透 過上層¥電跡線3 〇 i,、一上層導電言 :Γί 下層導電貫孔3〇3"另外形成通路:;Ϊ 到=X龢球34A,俾解決不同跡線交叉之問題。 往佈==用,’由於一般球柵陣列式封裝結構上往 乃型能過於 計之銲球及晶片銲墊’而導致基板電路佈 局I心 於複雜,因此若採多層方法將a κ萨执道Φ、#址 至相對應銲琰,+ Ρ * - Μ沣、σ套將曰曰片1干墊導電連接 斤以上。f在杈複雜的情況下,基板層數甚至高達6 1使得封基板層I會提高電路佈⑥的複雜度及成本, 。趨勢。ί的整體厚度提昇而不符合輕薄短小的電子產 f 一種β抵龜於此,台灣專利申請號第9 0 1 1 8 9 7 2號於是揭 路種从橋接元件解決跡線交又問題之方法。564534 V. Description of the invention (3) A continuous conductive trace 2 0 1 A is set between the pad 2 0 4B and the conductive through-hole 2 0 34. The conductive trace 2 0 1 A is bound to intersect with other conductive traces without 0 1 8 o'clock. Traces to connect with each other. The nucleus continuous figure 6 provides a conventional solution to the above problems. ^ When the circuit layout is implemented under the original substrate, an additional circuit layer (c 丨 γ is attached to the layer) is used for routing, so as to avoid the intersection of the circuit and the crossing line through the lower circuit ball. As shown in the figure, a fresh plate is prepared as the substrate 30. The substrate 30 has two or more substrates and two brushes on the substrate. The soil plate 30 'is patterned to form Ximei and Zeng traces. After the line 30 1 ′, guide the upper layer 22 =, 3 0 1 'through the at least one conductive through hole 3303 to the lower US Cup qn ", it ’s really Ding Sidao | Dian AP AP & the lower conductive through hole 3 〇3, is connected to the solder ball 34 of the 30th surface of the substrate. Therefore, under the continuity between Γ 丄 304B and the corresponding solder ball 3 ", it can pass through the upper layer \ electrical trace 3 〇i, an upper layer conductive speech: Γ ί lower conductive through hole 3 03" and another path : Ϊ to = X and ball 34A, 俾 to solve the problem of the intersection of different traces. To the cloth == used, 'because of the general ball grid array package structure, the forward-looking type can be too much of the solder balls and wafer pads' and As a result, the circuit layout of the substrate is complicated. Therefore, if a multi-layer method is used to carry out a κ sa Φ, # address to the corresponding soldering +, + Ρ *-Μ 沣, σ will be more than 1 dry pad conductive connection In the case of complicated substrates, the number of substrate layers is even as high as 6 1 so that the sealing substrate layer I will increase the complexity and cost of the circuit fabric. Trend. The overall thickness is increased, which does not meet the light and short electronic production f. β arrived here, and Taiwan Patent Application No. 9 0 1 8 9 7 2 then unveiled a way to solve the problem of trace crossing from the bridge element.
16955.ptd 第8頁 564534 五、發明說明(4) 如第7圖所示,此球柵陣列式半導體封裝結構包括一 基板4 0及至少一接置於基板4 〇上具設有複數個鲜墊之晶片 41(各銲塾以412A,412B,412C,412D表示),該基板40 供晶片4 1接置之周圍形成有複數個銲線墊4 〇 4 A4 〇 4 β, 4 04C, 4 04D ’以分別藉由導電跡線及導電貫孔而與銲球 44Α, 44Β, 4 4C, 44D電性連結。然而,如圖所示,當銲線 墊4 04Β與銲球44Α欲以導電跡線連接二者時,該連續性導 電跡線40^會橫槽在銲線墊4〇4极其相對應導電貫孔4〇3八 (同銲球44Α位置)之間,使得銲線墊4〇4β與其相對應之 導電通孔4 0 3 Α間無法採用連續性導電跡線來互相連接'為 克服銲線墊404B與導電通孔4〇;^之間電性無法連接的問 題,業者於是在銲線墊404B連接的導電跡線47"與導電通 孔4 0 3A連接的導電跡線47,之間使用打線或者跨^妾一零阻 值晶片電阻器48 ( Chip Res istor)來電性連結銲線墊 404B與其相對應之導電貫孔4〇3A,以避開置於同一電路表 面上之連續性導電跡線4 〇 1 A。 於其ί f i ΐ ϋ:橋接元件跨越跡線的電性連接方法無須 Γ,成本,但是,隨著晶片高集積化以 愈來愈高。此時,為防止晶Η盥俨娩Ba κ峪稷雜『生τ 由^十a # # ^万止日日片與1干線墊之間的金線誤觸跨 線短路冑,亥跡、線&又點係、發生於基板之打線區域内, 便無法採用此方法而會妨礙基板設計。 〆 另一方面,藉橋接銲線或被動 k供受阻p早之跡線電性連接時 器 疋件(如上述晶片電阻 ’橋接線弧以及被動元16955.ptd Page 8 564534 V. Description of the invention (4) As shown in FIG. 7, the ball grid array semiconductor package structure includes a substrate 40 and at least one connected to the substrate 4. Wafer 41 (each welding pad is represented by 412A, 412B, 412C, 412D), and a plurality of bonding pads 4 are formed around the substrate 40 where the wafer 41 is placed. 4 〇4 A4 〇4 β, 4 04C, 4 04D 'To electrically connect the solder balls 44A, 44B, 4 4C, 44D through conductive traces and conductive vias, respectively. However, as shown in the figure, when the bonding pad 4 04B and the solder ball 44A are to be connected by conductive traces, the continuous conductive trace 40 ^ will cross the groove at the bonding pad 4 0 and is extremely conductive. Between the holes 408 (the same position as the solder ball 44A), the bonding pads 404β and their corresponding conductive vias 4 0 3 Α cannot be connected with each other using continuous conductive traces. The problem that the 404B and the conductive vias 40 cannot be electrically connected. The industry therefore uses a conductive trace 47 connected to the bonding pad 404B and a conductive trace 47 connected to the conductive via 4 0 3A. Or, a zero-resistance chip resistor 48 (Chip Res istor) electrically connects the bonding pad 404B and its corresponding conductive via 403A to avoid continuous conductive traces placed on the same circuit surface. 4 〇1 A. Yu yi f i ΐ ϋ: The electrical connection method of the bridge element across the traces does not require Γ, cost, but it becomes higher and higher as the chip becomes more integrated. At this time, in order to prevent the inferiority of the Ba κ Η 生 Η τ 由 ^ 十 a # # ^ The gold wire between the Wanzhiri film and the 1 main line pad accidentally touched the cross-line short circuit. & It also occurs in the wiring area of the substrate, so this method cannot be adopted and it will hinder the substrate design. 〆 On the other hand, the bridge wire or passive k is used to electrically connect the obstructed p early traces to the electrical components (such as the above chip resistor ′ bridge wire arc and passive elements).
564534 五、發明說明(5)564534 V. Description of the invention (5)
件之高度會對打線造成妨礙 S 上述電性連接方法只適用於 L =不影響金線佈線’ 對於晶片與銲線墊間的跡線交,區域以外之基板, 則,運用打線方法或以銲锡動乃:難以改善;再 驟,相對地亦會提昇製程複雜 2 π件必須增加作業步 板跡線交叉問題提出一有效 5 ’業界亟需要對基 【發明概述】: 肝决万案。 本發明之主要目的即在 導致遠距離同電性銲球無法ς ,可改善因線路限制而 電性之銲球(如複數個接地妾之問題,使多個相同 運用現有製程技術便可達到性數個電源鮮球)只需 本發明之復-目的連;目的之晶片承載件。 之跡線交又問題,進而提以柘種可解決基板任何位置 件。 徒回基板之佈局靈活性之晶片承載 本考:月之#目的在於提供—種可避 影響打線,兼能改善基板打绫F Κ &々时Μ安兀仵同厪 片承載件。 “域内之跡線交叉問題之晶 本毛月之又目的在於提供一種不會增加製程步驟盥 材料支出,以避免基板單價提高之晶片承載件。 /、 基於上述及其他目的,本發明適用於球栅陣列式半導 體封裝件之晶片承載件係包括至少一芯層,其至少具有一 供晶片黏置之表面,於該表面上佈設有多數導電跡線,且 至少有二導電跡線之端部係相互對應而隔開一間距,以供 其他導電跡線穿越其間;一拒銲劑層,係敷蓋該多數導電The height of the component will hinder wire bonding. S The above electrical connection method is only applicable to L = does not affect the wiring of gold wires. For the trace intersection between the chip and the bonding pads, the substrate outside the area, use the wire bonding method or solder Xidong Nai: It is difficult to improve; secondly, it will also increase the complexity of the process. 2 π pieces must increase the number of work steps, board traces and crossovers. An effective 5 'industry urgently needs the basics [Summary of Invention]: Liver resolution. The main purpose of the present invention is to prevent long-distance isoelectric solder balls from being able to be used, which can improve the problem of electrical solder balls due to circuit restrictions (such as the problem of multiple ground pads), so that multiple identical ones can be achieved using existing process technology. Several fresh power balls) only need the complex-purpose connection of the present invention; the wafer carrier of the purpose. The intersection of traces is another problem, and then one of them can be used to solve any position of the substrate. Wafer loading with flexible layout of the substrate This test: The purpose of the month # is to provide a way to avoid the impact of wire bonding and improve the substrate mounting FK & "The objective of this problem is to provide a wafer carrier that does not increase the cost of processing steps and avoid the increase in the unit price of the substrate. Based on the above and other purposes, the present invention is applicable to balls The wafer carrier of a gate array semiconductor package includes at least one core layer, which has at least one surface on which the wafer is adhered. A plurality of conductive traces are arranged on the surface, and at least two conductive traces are at the end. Correspond to each other with a gap to allow other conductive traces to pass through it; a solder resist layer covering the majority of the conductive
16955.pul 第10頁 564534 五、發明說明(6) '~~~ 跡線三並於對應該兩導電跡線之端部位置上開設一第—開 口及第二開口 ,以供該兩導電跡線之端部外露出該拒銲劑 層,以及一導電塗料,係塗佈於該拒銲劑層之預設區域 土,以經由該第一開口與第二開口而連接兩導電跡線之端 邛,俾使該兩導電跡線形成一電性連結關係。 j較於習知基板,本發明之晶片承載件其導電膠可塗 ,心層表面上任何跡線交又(Trace Cr〇ss)部位,使 拓ί ^線端部能透過導電膠或導電碳㈣性連結而避開 拒銲劑層下方的其他跡線。 ^ $ 交叉接點上佈覆導電膠或導電碳粉提供電性橋 二:排:傳統因顧慮連結晶片之金線誤觸橋接元件而: =以解決基板上任何位置的跡線交叉問題;甚至)’ 5 的i電U Ϊ設;ΐ Ϊ間限制而無法將距離較遠電性連接 高局ΠΓ::導電膠形成之導電通路連結而提 【發明詳細說明】: 細揭第1圖、第2圖及第3α及咖詳 义X 1您日日片承载件之實施例。 板應用於-由基板10、接置於基 數金線1 3以及將θ H丨卜仏基板1 0及曰曰片1 1電性連接之多 示)上之多數號傳導至外部印刷電路板(未圖 然為克服前述跡之球柵陣列式半導體封裝件。 在又又(Trace Cross)等問題,需變更16955.pul Page 10 564534 V. Description of the invention (6) '~~~ Trace 3 and a first opening and a second opening are provided at the end positions corresponding to the two conductive traces for the two conductive traces The end of the wire exposes the solder resist layer, and a conductive coating is applied to a predetermined area of the solder resist layer to connect the ends of the two conductive traces through the first opening and the second opening.俾 Make the two conductive traces form an electrical connection relationship. Compared with the conventional substrate, the conductive adhesive of the wafer carrier of the present invention can be coated, and any trace intersection on the surface of the core layer allows the end of the wire to pass through the conductive adhesive or conductive carbon. Make a flexible connection to avoid other traces under the solder resist layer. ^ $ Conductive glue or conductive toner is applied to the cross contacts to provide electrical bridges 2: Rows: Traditionally, because of the concern that the gold wires connected to the chip accidentally touch the bridge components: = To solve the problem of trace crossing at any position on the substrate; even ) '5 的 电 电 ΪSettings; ΐ 限制 is limited and can not be connected to a long distance electrical connection high ΠΓ :: conductive path formed by conductive glue to introduce [detailed description of the invention]: Figure 1 Figure 2 and 3α and the detailed meaning of X1 X 1 embodiment of your daily film carrier. Application of the board-the majority of the substrate 10, placed on the base gold wire 13 and electrically connected to the θH 丨 bu substrate 10 and the chip 1 1 are transmitted to the external printed circuit board ( The ball grid array semiconductor package is not shown to overcome the aforementioned problems. Trace Cross and other problems need to be changed
16955.ptd 第11頁 564534 五、發明說明(7) 基板電路佈局方能實施封裝,故以下僅針對基板丨〇之結構 洋細敘述,其他元件及其連結關係請參考習知球柵陣列式 封裝結構。 如第2圖所示,該基板1 〇適用於單層基板或增層式多 層板,其包含一芯層1 0 0,該芯層1 〇 〇表面上圖案化 (Patterned)形成複數條導電跡線101,跡線1〇1上方並 敷佈有拒銲劑層1 〇 2 ( S ο 1 d e r M a s k)供跡線1 〇 1與外界電 性隔纟巴,母一條導電跡線1 〇 1各能穿越芯層内部之導電貫 孔103而與芯層1〇〇另一表面之銲球墊(未圖示)一對一電 性連接,此係習知故不另行贅述。惟當封裝件受限於線路 設計或空間限制而欲連結距離較遠之銲球或克服跡線交叉 ▲( Trace Cross)問題時,該基板之線路佈局則需進一步 如同第1圖所示,該芯層1〇〇係由FR4樹脂、玻璃樹 月旨二=脂等:料製成之樹脂絕緣層,具有一上表面i〇〇a Ξ _,該上表面1〇〇a上預先定義出-晶 片接置㈣(未圖示),並於該晶片接置區域外佈設多條 =電跡,。該等導電跡線中至少包括—第一跡線1〇1&及一 第二跡線ioib,該第一跡線101a之端部1〇6a(以下稱第一 端部106a)係與該第二跡線1〇lb之端部i〇6b (以 端部106b)相互對應,且該第—及第:端部 相隔一間距,俾供其他導電跡線丨〇丨c穿越其間。, ’、 該第一跡線101a可連接該第一端部1〇6'这:銲線塾 ΚΙ亦或連接該第一端部106碰且穿越第一導電貫孔1〇316955.ptd Page 11 564534 V. Description of the Invention (7) The substrate circuit layout can only be used for packaging, so the following is only a detailed description of the structure of the substrate. For other components and their connection relationships, please refer to the conventional ball grid array package structure. As shown in FIG. 2, the substrate 10 is suitable for a single-layer substrate or a build-up multilayer board, and includes a core layer 100. The core layer 100 is patterned on the surface to form a plurality of conductive traces. Line 101, a solder resist layer 1 〇2 (S ο 1 der M ask) is provided on the top of the trace 101, and the trace 1 〇1 is electrically isolated from the outside. A conductive trace 1 〇1 It can pass through the conductive through holes 103 inside the core layer and is electrically connected one-to-one with the solder ball pad (not shown) on the other surface of the core layer 100. This is a common practice and will not be repeated here. However, when the package is limited by the circuit design or space constraints and wants to connect the solder balls with a longer distance or overcome the Trace Cross problem, the circuit layout of the substrate needs to be further as shown in Figure 1. The core layer 100 is a resin insulating layer made of FR4 resin, glass tree moon purpose 2 = grease, etc., and has an upper surface i〇〇a Ξ _, which is previously defined on the upper surface 100a- Wafer placement ㈣ (not shown), and a plurality of = electric traces are arranged outside the wafer placement area. The conductive traces include at least a first trace 101 and a second trace ioib. An end portion 106a of the first trace 101a (hereinafter referred to as a first end portion 106a) is connected to the first trace portion 101a. The ends i06b (with end 106b) of the two traces 10lb correspond to each other, and the first and second ends are separated by a distance for other conductive traces 丨 〇 丨 c to pass through. ′, The first trace 101a may be connected to the first end portion 106. This: the bonding wire 塾 KI or the first end portion 106 may be bumped through the first conductive through hole 103.
16955.ptd 第12頁16955.ptd Page 12
564534 五、發明說明(8) 而與芯層1 0 0下表面1 0 0 b之第一銲球丨4 a相接;該第二跡線 1 0 1 b則是藉由第二導電貫孔103 b連接至芯層1 〇 〇下表面 1 0 0 b之第二銲球1 4 b上’同時該第—及第二銲球1 4 a,1 4 b得 以具有相同之電性(如均為接地銲球(Ground Bal 1)或 均為電源銲球(P 〇 w e r B a 1 1)等)。 該拒銲劑層1 0 2係塗佈於芯層1 〇 〇之上表面1 〇 〇 a,藉以 保護跡線1 0 1阻絕外界不當電性干擾。如第1及2圖所示, 該拒銲劑層1 0 2在芯層1 0 0之晶片接置區域外形成一提供多 數銲線墊(Finger)分布之打線區域i〇2b,以供金線13連 結而使晶片1 1與基板1 0之間電性連接。本發明之晶片承載 件較習知基板不同之處,在於該導電跡線1 0丨之第一端部 1 0 6 a與弟一端部1 〇 6 b上各開設有供跡線外露之第一拒銲劑 層開口 1 0 5 a (簡稱第一開口 1 〇 5 a)以及第二拒銲劑層開口 1 〇 5 b (簡稱第二開口 1 〇 5 b),以供一導電塗料1 2塗佈連 接。 該導電塗料1 2乃以導電性銀膠、導電碳粉 (Conductive Carbon)等較為常用,其他流動性或非流 動性之導電性膠黏劑亦得適用於本發明。若從本實施例視 之’以網版印刷方法將導電膠丨2塗佈到拒銲劑層1 〇 2上以 後’流動性導電膠1 2會連接並且填滿該第一開口 1 〇 5 a及第 二開口 1 0 5 b而使該第一跡線1 〇丨a與第二跡線丨〇丨b電性連 接。 如此’原本相距甚遠的第一及第二銲球丨4 a,丨4 b,便 可透過導電膠1 2而形成「第一銲球(或銲線墊第一跡564534 V. Description of the invention (8) The first solder ball 丨 4 a which is in contact with the lower surface 1 0 0 b of the core layer 1 0; the second trace 1 0 1 b is through a second conductive through hole 103 b is connected to the second solder ball 1 4 b on the lower surface 1 0 0 b of the core layer, and at the same time the first and second solder balls 1 4 a, 1 4 b can have the same electrical properties (such as These are ground balls (Ground Bal 1) or power balls (P ower B a 1 1). The solder resist layer 102 is coated on the surface of the core layer 100a, which is 100a, so as to protect the traces 101 from the external electrical interference. As shown in Figs. 1 and 2, the solder resist layer 102 forms a wire bonding area i02b outside the wafer-mounting area of the core layer 100 to provide a majority of finger pad distribution for gold wires. 13 is connected to electrically connect the wafer 11 and the substrate 10. The wafer carrier of the present invention is different from the conventional substrate in that the first end portion 106a and the first end portion 106b of the conductive trace 10 are respectively provided with a first for trace exposure. The opening of the solder resist layer 105a (referred to as the first opening 105a) and the opening of the second solder resist layer 105b (referred to as the second opening 105b) are provided for a conductive coating 12 to connect . The conductive coatings 12 are commonly used conductive silver glue, conductive carbon (Conductive Carbon), etc., other flowable or non-flowable conductive adhesives can also be applied to the present invention. If it is considered from this embodiment that after the conductive paste is applied onto the solder resist layer 1 by screen printing, the fluid conductive paste 12 will be connected and fill the first opening 105a and The second opening 1 0 5 b electrically connects the first trace 10a and the second trace 1b. In this way, the first and second solder balls 丨 4 a, 丨 4 b, which are far apart, can form a "first solder ball (or the first trace of the wire pad) through the conductive adhesive 12
第13頁 564534 五、發明說明(9) 線-導電膠_第二跡線-第二鮮球」之電性連結通路,以解 決跡線交叉的問題;同時,相同電性的銲球亦可以在現有 製程規模及不增加基板成本的考量下,突破跨越線路以及 空間限制而提高線路之佈局靈活性。 以上所述者僅為本發明之較佳實施例而已,並非用以 限定本發明之實質技術内容範圍。本發明之實質技術内容 係廣義地定義於下述之申請專利範圍中。任何他人所完成 之技術實體或方法,若是與下述之申請專利範圍所定義者 為完全相同,或是一種等效之變更,均將被視為涵蓋於此 專利範圍之中。Page 13 564534 V. Description of the invention (9) Electrical connection path of "wire-conductive glue _ second trace-second fresh ball" to solve the problem of trace crossing; at the same time, solder balls with the same electrical properties can also be used. Under the consideration of the existing process scale and without increasing the cost of the substrate, the cross-circuit and space constraints are broken to improve the layout flexibility of the circuit. The foregoing are merely preferred embodiments of the present invention, and are not intended to limit the scope of the essential technical content of the present invention. The essential technical content of the present invention is broadly defined in the scope of the following patent applications. Any technical entity or method completed by another person, if it is exactly the same as defined in the scope of patent application described below, or an equivalent change, will be considered to be covered by this patent scope.
16955.ptd 第14頁 56453416955.ptd Page 14 564534
圖式簡單說明 【圖式簡單說明】: 第1圖係本發明適用於BGA半導體封裝件之晶片承载 之局部上視圖; 第2圖係本發明適用於BGA半導體封裝件之晶片承载件 之剖面不意圖; 苐3圖係習知球撕陣列式(Ball Grid Array, BGA) 半導體封裝件之剖視圖; 第4圖係習知BGA半導體封裝件於理想狀態下之基板電 路佈局示意圖; 第5圖係習知BGA半導體封裝件發生跡線阻障之電路佈 局不意圖; 第6圖係習用以增層板解決跡線交叉之半導體封裝件 之剖面示意圖;以及 第7圖係習用以橋接元件解決跡線交叉之半導體封f 件之局部上視圖。 < 【元件符號說明】: 1 0, 2 0, 3 0, 40 基板 10 0 芯層 100a 芯層上表面 l〇〇b 芯層下表面 1 0 1,2 0 1,2 0 1 A至 D,3 0 1 ’,3 0 1π,4 0 1 A至 D 導電跡線 10 2 拒銲劑層 102b 打線區域 1 0 3, 2 0 3, 2 0 3A至 D,3 0 3’,3 03",4 0 3A至 D 導電貫孔Brief description of the drawings [Simplified description of the drawings]: Figure 1 is a partial top view of the present invention applicable to the wafer carrying of BGA semiconductor packages; Figure 2 is a cross-sectional view of the wafer carrying members of the present invention applicable to BGA semiconductor packages. Intent; 苐 3 is a cross-sectional view of a conventional Ball Grid Array (BGA) semiconductor package; FIG. 4 is a schematic diagram of a circuit layout of a conventional BGA semiconductor package in an ideal state; FIG. 5 is a conventional BGA The circuit layout of the semiconductor package with trace barriers is not intended; Figure 6 is a schematic cross-sectional view of a semiconductor package conventionally used to build a layer to solve trace crossing; and Figure 7 is a semiconductor conventionally used to bridge components to resolve trace crossing Partial top view of the seal. < [Description of component symbols]: 1 0, 2 0, 3 0, 40 Substrate 10 0 Core layer 100a Upper surface of core layer 10 〇b Lower surface of core layer 1 0 1, 2 0 1, 2 0 1 A to D , 3 0 1 ', 3 0 1π, 4 0 1 A to D conductive traces 10 2 solder resist layer 102 b wire area 1 0 3, 2 0 3, 2 0 3A to D, 3 0 3', 3 03 ", 4 0 3A to D conductive vias
16955.ptd 第15頁 56453416955.ptd Page 15 564534
圖式簡單說明 1 0 4, 2 0 4, 2 04A至 D,404A至 D 鲜線塾 104 鲜線墊 105a 第一開口 105b 第二開口 11,21,31 晶片 12 導電膠 1 3, 2 3, 2 3A至 D 金線 1 4, 24, 24A至 D 銲球 14a 第一銲球 14b 第二銲球 210 作用表面 211 非作用表面 212, 212A至 D,412A至 D 晶片銲墊 30’ 上層基板 30 π 下層基板 4 7,,4 7 π 導電跡線 48 橋接元件 16955.ptd 第16頁Brief description of the drawing 1 0 4, 2 0 4, 2 04A to D, 404A to D Fresh line 塾 104 Fresh line pad 105a First opening 105b Second opening 11, 21, 31 Chip 12 Conductive adhesive 1 3, 2 3, 2 3A to D gold wire 1 4, 24, 24A to D solder ball 14a first solder ball 14b second solder ball 210 active surface 211 non-active surface 212, 212A to D, 412A to D wafer pad 30 'upper substrate 30 π lower substrate 4 7, 4, 4 7 π conductive trace 48 bridge element 16955.ptd page 16
Claims (1)
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TW091123547A TW564534B (en) | 2002-10-14 | 2002-10-14 | Chip carrier |
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TW091123547A TW564534B (en) | 2002-10-14 | 2002-10-14 | Chip carrier |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392845C (en) * | 2004-11-12 | 2008-06-04 | 日月光半导体制造股份有限公司 | Packaging structure with high adhesivity between substrate and packing colloid |
CN112166508A (en) * | 2018-05-30 | 2021-01-01 | 科锐公司 | LED apparatus and method |
-
2002
- 2002-10-14 TW TW091123547A patent/TW564534B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392845C (en) * | 2004-11-12 | 2008-06-04 | 日月光半导体制造股份有限公司 | Packaging structure with high adhesivity between substrate and packing colloid |
CN112166508A (en) * | 2018-05-30 | 2021-01-01 | 科锐公司 | LED apparatus and method |
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