TW563279B - F2 laser system and process for producing a narrow-band pulsed ultraviolet laser beam - Google Patents

F2 laser system and process for producing a narrow-band pulsed ultraviolet laser beam Download PDF

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Publication number
TW563279B
TW563279B TW091106967A TW91106967A TW563279B TW 563279 B TW563279 B TW 563279B TW 091106967 A TW091106967 A TW 091106967A TW 91106967 A TW91106967 A TW 91106967A TW 563279 B TW563279 B TW 563279B
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Taiwan
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laser
laser system
patent application
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TW091106967A
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English (en)
Chinese (zh)
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Richard L Sandstrom
William N Partlo
Eckehard D Onkels
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Cymer Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10084—Frequency control by seeding
    • H01S3/10092—Coherent seed, e.g. injection locking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
TW091106967A 2001-04-09 2002-04-08 F2 laser system and process for producing a narrow-band pulsed ultraviolet laser beam TW563279B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/829,475 US6765945B2 (en) 1999-09-27 2001-04-09 Injection seeded F2 laser with pre-injection filter

Publications (1)

Publication Number Publication Date
TW563279B true TW563279B (en) 2003-11-21

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TW091106967A TW563279B (en) 2001-04-09 2002-04-08 F2 laser system and process for producing a narrow-band pulsed ultraviolet laser beam

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Country Link
US (1) US6765945B2 (https=)
EP (1) EP1378035A4 (https=)
JP (1) JP2004524706A (https=)
CN (1) CN100508308C (https=)
TW (1) TW563279B (https=)
WO (1) WO2002082598A1 (https=)

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US20030219094A1 (en) * 2002-05-21 2003-11-27 Basting Dirk L. Excimer or molecular fluorine laser system with multiple discharge units
US20040202220A1 (en) * 2002-11-05 2004-10-14 Gongxue Hua Master oscillator-power amplifier excimer laser system
US7308013B2 (en) 2002-11-05 2007-12-11 Lambda Physik Ag Excimer or molecular fluorine laser system with precision timing
US7217941B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
JP4657103B2 (ja) * 2003-04-22 2011-03-23 株式会社小松製作所 露光用２ステージレーザ装置
US7286574B2 (en) 2003-11-19 2007-10-23 Neumann Information Systems, Inc. Infrared laser
US7365349B2 (en) 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7141806B1 (en) 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
US7180083B2 (en) 2005-06-27 2007-02-20 Cymer, Inc. EUV light source collector erosion mitigation
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WO2002082598A1 (en) 2002-10-17
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