TW559894B - A mask with alignment mark and a method of detecting with the same - Google Patents

Abstract

A mask with alignment mark and a method of monitoring with the same is provided. There are a plurality of TFT-LCD device mask patterns and a alignment mark in the mask, wherein the plurality of TFT-LCD device mask patterns are for forming a plurality of TFT-LCD device patterns by exposing a photoresist formed on a substrate, and there is a display region in the device mask patterns. The alignment mark is located on the skirts of the display region and in the device mask patterns, whereby monitoring overlay performance of the TFT-LCD device mask patterns.

Description

559894 V. Description of the invention (1) The present invention relates to a mask of a thin film transistor liquid crystal display (TFT-LCD), and in particular to a mask having an alignment measurement mark and a detection method thereof . The thin film transistor liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter array substrate, and a liquid crystal layer. The thin film transistor array substrate is composed of a plurality of thin film transistors arranged in an array, and corresponds to each thin film transistor. One pixel electrode (Je) is configured. The above-mentioned thin-film transistor system includes gate, channel, source and drain, and thin-film transistor system. It is used as a switching element of a liquid crystal display unit. The operation principle of a 溥 membrane transistor is similar to that of a conventional semiconductor element. = Is an element with three terminals (gate, source, and drain). Usually a thin film transistor element It can be divided into two types of dust: amorphous silicon and polycrystalline silicon. Among them, the amorphous silicon thin film transistor is a relatively mature technology. Thin thin film transistor and liquid crystal display, and its manufacturing process requires five steps: usually there are five The first track is used to define the gate ^ 疋 is used to define the active layer including the channel and the ohmic contact layer ^ to define the source / pole, the fourth track, The three tracks use nn_., And # 乐 道 疋 is used to define the contact window hole (contact ==,) and the last-track is used to define the pixel electrode (.ixel property, the area of the correct case when exposed).杧 = bit 'that is, the box without a picture' to detect the layers and

^ (S2iStwt.ptd Page 5 559894 V. Description of the invention (2) ______ The accuracy of layer overlay (overlay). This method is "box in box". Then, after exposure, compare the patterns Also called the position to determine whether the accuracy of layer-to-layer alignment fits the box between the layers. However, the box on the reticle of the thin film transistor liquid crystal display ^ layer is because it is arranged in the figure without ::: The definition of each configurable position will be limited, and these " b0 :: 'fields: so it is far from the display area of the thin film transistor liquid crystal display, so the process is unstable due to the influence of the unstable process. Leading to measurement errors, the next two] to: The results are not representative. In addition, in general! In addition to the test pattern of the measuring box in box ", there will be a test key of the I: I ), So the mask pattern of ^ 目 关 == degree of accuracy will take up the sum of: reduce the number of remaining test keys. Therefore, the object of the present invention is to provide a 量 * light with alignment measurement. Hood and its detection method to improve the accuracy of the measured value T Another objective of the invention of the 3 Jr. is to provide an alignment measurement target.

: And its extraction method to improve the cognition by the disadvantages of peripheral process J. Another object of the present invention is to provide a mask with an alignment measurement mark and a detection method thereof to increase the selection of measurement points. Another object of the present invention is to provide a mask with an alignment measurement mark and a detection method thereof, so as to increase a detection test key of the mask. According to the above and other objectives, the present invention proposes a photomask with alignment measurement ‘β’, each of which includes several thin-film transistor liquid crystals.

559894

V. Description of the invention (3) The mask pattern of the display element and a mask pattern of the element are used in a pattern display area of an elementary liquid crystal display; and the measurement mark is aligned in the mask pattern of the light element to mark the substrate. To detect the accuracy of the thin film transistor and body alignment. The present invention further provides a method for aligning the accuracy of the mask layer and the layer, including a plurality of first element mask patterns, a display area, and a periphery of the first alignment area and the first element mask pattern. The second element light pattern includes a < display area; and a first and a second element are located on the periphery of the display area and the position of the second element's reticle pattern corresponds to the second, as a measurement layer and a layer between the first photomask and the second A first measurement alignment mark on the photomask and a first alignment measurement mark on a plate are then adjusted according to the deviation value of the present invention. Because the alignment measurement periphery and the element mask pattern are recorded, It is located far from the display area, and the measurement mark mask pattern is aligned, in which the photoresist on the plate is exposed to form several thin films, and the element mask pattern also includes a mask pattern that is located on the periphery of the display area and on the light. Resistive exposure to form a layer and layer for measuring the pattern of a liquid crystal display element / a light of a thin film transistor liquid crystal display includes providing a first photomask including the first photomask pattern / including a measurement mark light cover Case, within the display case. Then, a second mask pattern is provided, and the second element mask is aligned with the S-mark mask pattern, and the first mask is aligned with the position of the 1-mark mask pattern. Alignment accuracy marks. Then, the pattern is sequentially transferred to a substrate, the second alignment measurement mark is formed, and then the deviation value of the second alignment measurement mark is measured. The position of the light sheet and the second mask. The mark is set in the display area of the component pattern, so it can improve the conventional method.

559894 V. Description of the invention (4) point, thereby improving the accuracy of the measured value. Moreover, according to the features of the present invention, the alignment measurement mark can be arranged beside any pixel (pixe1) to increase the selection of measurement points. In addition, since the present invention eliminates setting the alignment measurement mark in the element-free pattern area on the photomask, the remaining number of detection test keys can be increased on the photomask. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings as follows: Reference numerals of the drawings: 100: Photomask 1 0 2: Element mask pattern 1 0 4: Display area 1 0 6 · Pull area I 0 8: External circuit area II 0: Alignment measurement mark mask pattern 120: Area 200: Substrate 21 0: Section An alignment measurement mark 220: a second alignment measurement mark 300: providing a first photomask, including a first alignment measurement mark photomask pattern, located outside the display area and inside the photomask pattern 302: providing a The second photomask includes a second alignment measurement mark mask pattern, which is located outside the display area and within the photomask pattern, wherein the position of the first alignment mark mask pattern and the second alignment measurement mark mask pattern are s position

c) S28twf. ptd page 8 559894 V. Description of the invention (5) Correspondence 3 04: Transfer the pattern of the first photomask to the substrate, and measure the alignment mark $ — 306 · Pattern of the second photomask Transfer to the substrate, and measure the alignment mark. Let's measure the deviation value of the first alignment measurement mark and the second measurement mark on the substrate. An embodiment of the position of a photomask and a second photomask FIG. 1 is a schematic diagram of a photomask with marks according to a preferred embodiment of the present invention. Please refer to Figure 1 for the + test. The photomask 100 includes several thin-film transistor display (TFT-LCD) element mask patterns i 02 and the alignment amount = mask pattern 110, among which the element mask pattern. 102 is used to form a plurality of thin film transistor liquid crystal display element patterns on a substrate by resistive exposure. Two mask patterns 102 include a display area 104, a pull-out area 106, and two outer 70 circuit areas 1 08. ; And the alignment measurement mark mask pattern 丨 丨 〇 is located at the periphery of the display W4 and the element mask pattern 102, and forms an alignment measurement mark with the photoresist exposure on the substrate to measure the thin film transistor The layer-to-layer alignment accuracy of the liquid crystal display element pattern. Please continue to refer to FIG. 1. Although the alignment measurement mark mask pattern 110 in the figure is only disposed outside one of the display areas 104, the configuration and quantity of the alignment measurement mark mask pattern 110 are equal. It can be increased or decreased according to the need, and is not limited to 75 as shown in this figure. In addition, because the alignment measurement mark mask pattern is

I Page 9 lAS28twf.ptd 559894 V. Description of the invention (6) Outside the display area 104, so when forming the color filter (c ο 1 〇rfi 11 er) of the thin film transistor liquid crystal display, it was originally formed The area of the alignment measurement mark will be covered by the black matrix (BM), without reducing the aperture ratio. In addition, the area 1 20 outside the element mask pattern 1 02 on the mask 丨 〇 〇 can also be equipped with several detection test keys. When the present invention is applied to the definition process of the thin film transistor liquid crystal display, the process of defining the contact window hole (001 ^ 3 (^ 〇pening)) and the process of defining the pixel electrode are particularly profitable. Because the area of the pixel electrode is very large, with the current measuring instruments, only one corner of the pixel electrode and the contact window hole of the front layer can be observed at this time. Therefore, the position between the two cannot be used to determine the pixel electrode. Layer-to-layer alignment accuracy. In this embodiment, an alignment measurement mark with a box in a box (b0x soil η b ^ ox) is taken as an example. The electrode's righteousness is shown in Figure 2. Figure 2_Figure 对准 Alignment measurement standard according to a preferred embodiment of the present invention 呓 = Schematic, please refer to Figure 2 and use the contact obtained by the present invention After the definition of the window 2 line and the contact hole, the first β standard = / 则 ^ 210 ′ is formed on the substrate 200. Then, the shape is a box. Then, using the invention 20 (Γ 上 / Λ Electrodes and photomasks undergo a second alignment measurement on the substrate after the day electrode definition process Note 220 'its shape is also a box. And ^, ideally, the first alignment measurement mark 21 should be located in the center of the measurement mark 220, of course, the first | second: == mark 21G The box sizes of 220 and 220 are interchangeable, which can also accurately align the layer and layer of the pattern of the thick film transistor liquid crystal display element:

y &S; S28iwi.ptd page 10 559894 5. Description of the invention (7); and the detection method according to the present invention is shown in FIG. Transistor, said-is a detection film according to a preferred embodiment of the present invention. The steps of the mask layer and the layer alignment accuracy of i are shown in a first step, and in step 300. In one embodiment, a first photomask is provided, including a pattern. Here, “则” is marked with a reticle pattern, which is located outside the display area and in the rim of the mask. &Amp; =, the shape of the first alignment measurement mark reticle pattern is, for example, the first mask, which is used to define contact Mask in the window hole. …, Silly, in step 302, 楛 for 篦-氺 莒. 唆 align the measurement marks to set the map check, 、, 罩, 第一, 第一, 第一 1, 1 cover pattern, located outside the display area and Photographic pattern i photo macro: The position of the alignment mark mask pattern corresponds to that of the second alignment measurement target; the shape / position f corresponds. Among them, the second alignment measurement mark mask = light i is, for example, a box; and the second mask is, for example, used to define the day plate 3 °° 4 'to transfer the pattern of the first mask to the base The second 罝 罝 里 'is aligned with the mark. Then, in step 306, it is recorded. 2. The pattern is transferred to the substrate to form a second measurement alignment plate. 1 = Measure the alignment accuracy between the first alignment measurement mark layer and the layer on the substrate. After that, the stomach may include the position of the first mask and the second mask according to the deviation value. Step 31: As described above, the feature of the present invention is to measure the alignment: the periphery of the display area of the cow pattern and the inside of the element mask pattern;: two covers; knowing that the alignment measurement mark is set on the display Farther away, the towel is affected by the periphery

9cS28twf.ptd Page 11 559894 V. Description of the invention (8) Disadvantages of instability, thereby improving the accuracy of the measured value. Moreover, according to the features of the present invention, the alignment measurement mark can be arranged beside any pixel to increase the selection of measurement points. In addition, since the present invention eliminates the need to set the alignment measurement mark in the mask area, the number of remaining keys can be increased on the mask. Although the present invention has been disclosed and limited by the preferred embodiments, anyone skilled in the art = is not used within the scope, when various changes can be made, the spiritual scope of the invention shall be deemed to be attached to the scope of patent protection attached to the invention. tAS28twf .ptd Page 12 559894 Brief description of the drawing Figure 1 is a schematic diagram of a mask with an alignment measurement mark according to a preferred embodiment of the present invention; Figure 2 is a schematic view of a mask according to a preferred embodiment of the present invention The magnification of the alignment measurement mark is not intended, and FIG. 3 is a schematic diagram of the steps for detecting the accuracy of the mask layer and the layer alignment of the thin film transistor liquid crystal display according to a preferred embodiment of the present invention.

9828twf.ptd Page 13

Claims (1)

559894 6. The scope of patent application includes: 1. A mask with alignment measurement marks, in which each mask is covered with &, f: mask pattern for photoresist exposure on a substrate溥 several 溥 membrane transistor liquid crystal display element patterns, the element mask pattern of a bean element includes a display area; and the Bayi-Zunli measurement mark mask pattern, which is located at the periphery of the display area and the element In the photomask pattern, an alignment is formed by the photoresist exposure on the substrate = Jσ has been used to detect the layer-to-layer alignment accuracy of the thin film transistor liquid crystal display element pattern. 2. The mask with alignment measurement marks as described in the first item of the patent application, wherein the alignment measurement mark mask pattern on each of the masks includes a box. 3. The mask with alignment measurement marks according to item 2 of the scope of the patent application, wherein the size of the box on each mask is different. 4. The photomask with alignment measurement marks as described in item 2 of the scope of the patent application, wherein the position of the box of one of the photomasks is located on the box of the other of the photomasks. In the center. 5 · The photomask with alignment measurement marks as described in item 1 of the scope of the patent application, including a plurality of test test keys, arranged on the periphery of the photomask patterns of these components. 6. The mask with alignment measurement marks as described in item 1 of the scope of the patent application, wherein the mask patterns of the components further include: a mask pattern in a pull-out area, which is located outside the mask pattern in the display area ;as well as/, 9828twf.ptd Page 14 559894 VI. The scope of the patent application encloses a mask pattern in the external circuit area. It is located outside the mask pattern in the pull line area. 7 ++ kinds of masks with alignment measurement marks are included. A first photomask and a second photomask suitable for performing a day electrode manufacturing process connected to the f window hole, wherein the first photomask and the second photomask each include a plurality of display areas. Element areas, which further include: a first alignment measurement mark mask pattern, located on the periphery of the first display and within the element areas; and ninety-one μ one second alignment measurement mark mask A pattern located in the periphery of the display area of the second photomask and in the component regions, wherein the position of the first alignment mark mask pattern is in phase with the second alignment measurement mark mask pattern Correspondence 'is used as a mark for measuring the alignment accuracy between the contact window hole and the pixel electrode. 8. The mask having an alignment measurement mark as described in item 7 of the scope of the patent application, wherein the mask pattern of the first alignment measurement mark includes a first: box. 9. The mask with an alignment measurement mark as described in item 8 of the scope of the patent application, wherein the second alignment measurement mark mask pattern includes a second frame. 10. The mask with an alignment measurement mark as described in item 9 of the scope of the patent application, wherein the position of the second box is located in the center of the first box. 11 · The photomask having an alignment measurement mark as described in item 7 of the scope of patent application, further comprising a plurality of detection test keys disposed on the first and second photomasks. The periphery of the crystalline liquid crystal display element area. 12. The mask with alignment measurement marks as described in item 7 of the scope of patent application, wherein the component areas further include: 9828twf.ptd Page 15 559894 Scope of patent application Two pull-wire areas are located outside the display area; and external circuit areas are located outside the pull-line area. A method for the accuracy of a photomask layer of a debt-only film-type liquid crystal display includes: layer alignment to provide a first photomask, the first photomask comprising: > a plurality of first element photomask patterns Wherein the first element photomask patterns include a display area; and a first alignment measurement mark photomask pattern located at the periphery of the display area and within the first element photomask patterns; providing a second photomask The second photomask includes: a plurality of second element photomask patterns, wherein the second element photomask patterns include the display area; and a second alignment measurement mark photomask pattern located at the periphery of the display area and Within the mask patterns of the second elements, the position of the mask pattern of the first alignment mark corresponds to the position of the mask pattern of the second alignment measurement mark as a measurement layer and inter-layer alignment accuracy. Transfer the pattern of the first photomask to a substrate to form a first measurement alignment mark; Transferring the pattern of the second photomask to the substrate to form a second alignment measurement mark; and measuring one of the first pair of measurement marks and the second alignment measurement mark on the substrate. Deviation. 1 4 · The detection thin film transistor as described in item 13 of the scope of patent application 559894 6. Scope of patent application The method for the alignment accuracy of the mask layer and the layer of the display, whose deviation value adjusts the positions of the first mask and the second mask. iAccording to the "species of 彳 彳" / mask of the special film transistor liquid crystal display > | The alignment accuracy of the layers, the steps include: a layer of a vapour electrode and a contact window mask, the contact window light The mask includes: a plurality of mask patterns having a display area; and a mask pattern of a first alignment measurement mark, which are located within the stomach band and the first mask patterns; the Z display area A pixel electrode photomask, the pixel electrode photomask includes: a plurality of second photomask patterns having the display area; and a second alignment measurement mark photomask pattern located on the periphery and the second photomasks. In the photomask pattern, the position of the first alignment of the five photomasks corresponds to the position of the second alignment measurement mark light ^ °; the dry map tea transfers the pattern of the photomask of the contact window to A substrate, the alignment mark is measured with one measurement; the pattern of the pixel electrode mask is transferred to the substrate, and the mark is measured with the second alignment; and Measure a deviation between the position of the first alignment measurement mark and the position of the second alignment measurement mark. The method for detecting the alignment accuracy of a mask layer and a layer of a thin film transistor liquid crystal display device as described in item 15 of the scope of patent application, which further includes adjusting the contact hole mask and the pixel electrode according to a deviation value. Mask position.