TW552632B - Gas absorption-type wafer protection device and method thereof - Google Patents

Abstract

The present invention provides a gas absorption-type wafer protection device and method thereof. The structure of the gas absorption-type wafer protection device of the present invention comprises: a degas chuck; degassing device; recess groove of circular plate and outgassing device. The present invention utilizes the way of degassing to absorb the silicon wafer onto the degas chuck, and then the degas chuck is put inside the recess groove of circular plate which is connected to the outgassing device, so as to vent gas to the outgassing channel between the periphery of degas chuck and the recess groove of circular groove, and make the gas spills over from the outgassing channel, which prevents the etching solution from leaking into the silicon wafer side and solves the nonuniform stress problem generated in the well-known technology.

Description

552632 V. Description of the invention ο [Scope of application of the invention] The present invention relates to the recording method, and particularly to two methods: two-type wafer protection devices and methods thereof. The gas adsorption type of sa p etching process [Background of the invention] The opening degree of integrated circuits and the reduction of the size of sealed circuits are meant to reduce costs and increase reliability. ^ Processes such as lithography, die bonding, and packaging are all under development. _ In addition, it is also important to perform the Japan-North drilling process after forming circuits on the wafer surface. Behind the crystal: The damage caused by the "etching" requires the use of a selective drop "two," in order to avoid damage to the circuit. Methyl ammonium hydroxide (TMAH 'Tet carved T. Etch. For example, four

Hydroxlde) ^^ U ^ ΓΓ Yl, with a thunder 炻 i / /, and a small reaction to aluminum (integrated circuit manufacturing process. However, in the TMAΗ ^ column, the metal is aluminum) is less likely to cause circuit damage, chlorine Oxidation such as / Λ 化 钟 ⑽) Qian Ke, You You Tian, such as E ^ 扪 1 Yan-Zhan is fast in etching speed, cheap in price and soluble in aluminum. It is long, but its disadvantage is that the selectivity to aluminum is poor, and it will also etch. Therefore, a way to protect the wafer with a crystal back protection fixture can solve the problem. It mounts the wafer front side inward on the wafer back protection clip, and then etches the etched part to improve the existing wafer back etching process. The crystal back protection fixture currently used is locked by screws

Page 4 552632 V. Description of the invention (2) m said that the circle is clamped on the back of the crystal back protection fixture (0-r 1 ng) to make it bad | μ 装 也 > between low I, and then use rubber screws Locking or other; ::: Two should = buffer. However, the effect of mechanical stress on the wafer can be caused by the machine condition. The uneven force of aB0 'will cause the wafer to break apart. There is also a method for wafer protection. * Partially coated with polymer (PQlyme〇 ^, restart 4) On the wafer to be protected, however, the w method And need to: * The problem of biomolecular residues in Heyiwu. [Objective and Summary of the Invention] In view of the problems of the above-mentioned conventional technology, the present invention has a formula: a round protection device and its method *. The invention uses a gas. The protection device is tightly attached to the surface of the wafer, and further uses gas star power to prevent the leakage of the etching solution to achieve the purpose of protecting the wafer. Use == 在 :: The lack of good knowledge technology " Decision- General column: 22: iΛΑ 保 5 wafer breakage and erosion problems that often occur in the circle. And the disadvantages of using the polymer layer protection method to make layer residues. In addition, the use of the wafer protection of the present invention The device can be etched with a potassium hydroxide (K0 液) etchant, and of course, it does not make the etching speed produced by the ^ TMAΗ etchant slow and expensive. The present invention provides a gas adsorption wafer protection device and method, _ 552632 V. Invention Explanation (3) The gas-adsorbed wafer protection device provided by the person ^ month, the unit's academic structure includes a suction suction cup, a suction device, a disc groove, and a gas outlet device. ·· Exhaust suction cup covers the silicon wafer to protect it ^ The exhaust suction cup also includes an exhaust path. The exhaust path is connected to the exhaust air exhaust device. The exhaust device uses the exhaust method to make the silicon wafer Adsorbed to the suction and suction flaws. The second guarantee is to prevent the engraving liquid from invading money on the silicon wafers when the stone is being carved. The suction cup is placed in the groove of the disc. Inside, the disc concave sample ^: The degree is higher than the suction cup, the gap between the suction cup and the disc groove is 7.1, the air passage. The disc groove is connected to the air outlet device, the air outlet device / ^^ 体 到The gas outlet path allows the gas to overflow from the gas outlet path to prevent the etch solution from infiltrating from the side of the wafer. 蚀 This etched disk is recessed: Good hair! The round absorption pump used by the gas adsorption wafer protection device 2 ::: : Double more !: Use the double-layer structure of the sandwich part to open 1: It is even more when attached to the suction suction cup; Closer = put the suction cup close to the silicon wafer. Its elasticity 2 and 3, Then start the air extraction device to make the air extraction. 'The body must be able to resist the scum of the liquid engraved liquid and cooperate with the gas adsorption type adsorption wafer protection method of the present invention. The structure of the wafer protection device is as follows: Yes :: First, gas adsorption is provided and the gas is sucked into the suction sucker by using the gas outlet device to pass gas into the round milk; the hole is formed by the groove of the pan and the suction sucker. Out of

[Description of the preferred embodiment] The present invention is compatible with the gas type to prevent the wafer from being damaged by the easy-to-fabricate wafer protection caused by the liquid engraving tool. It is effectively separated from the solid groove of the present invention and the air is sealed with a seal. The device is a protection device wafer, which indicates that all leaked wafers are outgassing, and a broken device caused by the leakage of the suction gas to the suction protection device disclosed by the suction and silicon crystal can be generated; The middle device is placed so that the silicon wafer is put in the pumped gas wafer and kept secretly. This chip, as well as the solution provided, does not include the design surface of the wafer suction chuck, and it is a solution to the problem. Shaped uniformly engraved #engraved liquid gas suction cup attached crystal gas suction cup round connection device, using gas and the use of the conventional force of the invention, the formation of gas leakage, the extraction circle protection is more close to the surface In the Jiudan Wanfa method, the pressure of the gas adsorbed by the square gas to the gas adsorption of the crystal back protection clip can avoid stress and the problem of the body isolation layer. Device, disc device. And also, close, its dense a round rubber

552632 V. Description of the invention (5) Ring (0-ri ng) protection i ί: ΓΛ 'Λ is based on the present invention, the example of a gas adsorption wafer protection device is pumping; disk 20, "; = = : F adsorption wafer | device, composition. Among them, pumping air;; = the inner layer disk 21 is combined with the outer layer disk 22 like a layer of circle :: inside the sentence disk 21 is combined outside. Made. Internal air passage. The thickness of inner i is about 5 mm (_). In particular, the edges of the inner round rim 4®. Then, the suction device 3; = the element 2 gas passage that holds the surface of the Shi Xi wafer 10 is adsorbed on the suction cup 2. Pumping up; ί: Pumping makes the dream wafer 10 through 10 secure and 4 = a structure of equal height, so that ... Secondly, the suction sucker 20 is set on the tray 20. The suction cup 20 and the concave 3 of the disk are in a disk groove 40, and the exhaust path is connected to the air outlet. "Although the distance forms an air outlet path, the air outlet suction cup 20 and the disk are concave, and the milk device 50 can be The gas should be separated from the layer by pumping to prevent the moment r: invasion == overflow between the edges to form a gas barrier measure 40. The edge must be higher than the pumping == edge. It should be noted that the disc is concave. In addition, each edge of the present invention has an edge. The two parts of the disc concave rod and the rolling body adsorption type wafer protection device are used to make the air suction cup can be designed as a rabbit_two can be one of stainless steel and Teflon. And the pumping part forms a double-layered structure with a suction-type garment, using the sandwich milk channel of the double-layered structure. And the suction suction cup can be designed to have

The circular adsorption is more effective when the suction is sucked: it also includes the use of a sealed device to place the silicon crystal device in the suction J :: 2: The sealing (O-ring) used in the embodiment of the present invention is connected to the opening of the circle. One of the faces is a round rubber ring air suction cup core =: the round rubber ring when the air device is used (1) can make the pump less light S the gas adsorption type wafer protection device of the embodiment of the present invention, the hair =-^ attach crystal The circle protection method includes the steps described below. First, the aforementioned gas adsorption wafer protection device is pumped. Connect to I and start again. The garment 30 sucks the surface to be protected of the silicon wafer by suction, and the suction cup 20 exposes the surface to be etched of the silicon wafer 10. Next, the milk production device 50 is used to pass nitrogen or air into the air outlet path formed by the disc groove 40 and the suction cup 20 to allow the gas to overflow from the air outlet path to form a gas barrier layer to prevent the infiltration of the etching solution. Next, the pressure of the nitrogen or air to be passed can be adjusted appropriately to 1 to 10 sccm. Finally, the silicon wafer can be etched using an etchant.

In the above-mentioned gas adsorption wafer protection method, the final etching step may be a step of placing a money engraving solution into an etching bath, and then immersing a silicon wafer and a gas adsorption wafer protection device in the etching bath for money carving. In addition, a round rubber ring (0-ring) is used to make the silicon wafer adhere to the suction chuck more densely. In addition, the pressure of the gas overflowing from the gas outlet path must be greater than the liquid pressure of the etching solution and the suction pressure of the suction cup to prevent the penetrating liquid from penetrating, and the suction pressure of the suction cup must be greater than the liquid pressure of the etching solution. The wafer can be firmly fixed on the suction sucker. In addition, as the etching solution, a potassium hydroxide solution can be used, as compared with the use of tetramethylammonium hydroxide (TMAH,

552632 V. Description of Invention (7)

Tetramethyl Ammonium Hydroxide) # The etching solution can reduce the manufacturing process to 0. The preferred embodiment of the present invention is disclosed as above, but it is not refined: 2 3 3 'Anyone skilled in related arts will not depart from the present invention. Made a few changes and retouching, so the present invention prevails. It must be as defined by the scope of the patent application attached to this specification

552632 Brief description of drawings Figure 1 is a schematic cross-sectional view of a gas adsorption type wafer protection device according to an embodiment of the present invention. [Explanation of figure symbols] 10 Silicon crystal circle 20 Suction suction cup 21 Inner layer disc 22 Outer layer disc 30 Exhaust device 40 Disc groove 50 Exhaust device

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Claims (1)

552632 6. Application patent scope 1. A gas adsorption process, which includes a suction suction to protect and fix the road; the suction device prevents the etching of a disc concave suction suction cup and the outgas when the dream wafer is etched The filling device overflows all the way to form a round edge. 2 · If you apply for a patent, where the circle-〇3 · If you apply for a patent, 'where the pumping is one of the inner layers 4 · If you apply for a patent,' where the pumping holes are uniform 5 The Yuen-Yuan device is used for the etching of wafers. '=' F-clamping — the part that Shi Xi wafer wants to protect. 疋 The silicon yen and the suction cup have a suction vent. Connected to the air-intake path system and sucked to the air-exhaust suction cup by means of air-exhaust, used to etch the silicon wafer etching solution to the part to be protected by the silicon wafer; In the disc groove, a gap between the disc grooves forms an air outlet passage; and f 'the disc groove is connected to the air outlet device, the outlet body to the air outlet passage, so that the gas passes through the gas outlet. The gas barrier layer is used to prevent the etching solution from eroding the gas-adsorbed wafer protection mounting groove described in item 1 of the silicon crystal enclosure. The material is the gas described in item 1 of stainless steel and Teflon. The suction type wafer protection and gas suction cup is a ring-shaped double-layer structure. From the edge of the disc and an outer layer bonded disc. The gas adsorption wafer protection device described in item 1 / kg. The milk sucker is a gas adsorption wafer protection device with a plurality of 0s on the edge of the suction cup. Page 12 552632 VI. Patent application scope Use the gas outlet device to pass a gas to the gas outlet path formed by the disc groove and the suction sucker, so that the gas overflows from the gas outlet path to form a gas barrier layer. In order to prevent the etching solution from eroding the edge of the silicon wafer; and use a coin etching solution to start the #etching of the Shixi wafer. 9. The gas-adsorbed wafer protection method according to item 8 of the scope of the patent application, further comprising placing the etching solution in an etching tank, and placing the silicon wafer and the gas-adsorption wafer protection device in the A step of etching a groove to perform etching. 10. The gas adsorption wafer protection method according to item 8 of the scope of the patent application, wherein the suction cup is a ring-shaped double-layer structure, and an inner layer disc and an outer circle are raised from the edge. Plate combined. 11. The gas adsorption wafer protection method according to item 8 of the scope of the patent application, wherein the suction suction cup has a plurality of uniform suction holes on the edge of the suction suction cup. 1 2. The gas-adsorbed wafer protection method according to item 8 of the scope of patent application, wherein the edge of the disc groove is higher than the outer edge of the suction cup. 1 3. The gas-adsorbed wafer protection method according to item 8 of the patent application scope, further comprising the step of providing a sealing device to make the silicon wafer more densely sealed when it is adsorbed on the suction chuck. 14. The gas-adsorbed wafer protection method as described in item 13 of the scope of the patent application, wherein the sealing device is an elastomer placed on a joint surface of the suction cup and the silicon circle. 552632 6. Application patent scope 1 5. The gas adsorption wafer protection method according to item 8 of the patent application scope, wherein the pressure of the gas overflowing from the gas outlet path is greater than the liquid pressure of the etching solution. Page 15