TW550683B - Method for correcting defect in gray tone part in gray tone mask - Google Patents
Method for correcting defect in gray tone part in gray tone mask Download PDFInfo
- Publication number
- TW550683B TW550683B TW090124054A TW90124054A TW550683B TW 550683 B TW550683 B TW 550683B TW 090124054 A TW090124054 A TW 090124054A TW 90124054 A TW90124054 A TW 90124054A TW 550683 B TW550683 B TW 550683B
- Authority
- TW
- Taiwan
- Prior art keywords
- gray
- correction
- defect
- scale
- film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
550683 五、發明說明（1) [發明所屬之技術領域] 本發明係有關灰階罩幕之灰階部的缺陷修正方法者。 [習知之技術] 近年來，在大型LCD用罩幕之領域，有人使用灰階罩幕 δ式圖減少罩幕張數（月刊FPD Intelligence，1999年5月）。 在此’灰階罩幕，如圖8 (1 )所示，具有遮光部（1 )、透 射部（2 )和灰階部（3 )。灰階部（3 )，係屬於使用灰階罩幕 之大型LCD用曝光機解像限度以下之遮光圖案（3a)所形成 之領域’其形成之目的在減少透射該領域之光線透射量， 並減少该領域之照射量而選擇性地變更光阻之膜厚者。遮 光部（1 )和遮光圖案（3 a)通常均係由鉻或鉻化合物等同一 材質、同一厚度之膜所形成。 使用灰階罩幕之大型LCD用曝光機之解像限度，在步進 機方式之曝光機約為3 # m，鏡面投影方式之曝光機約為4 # m °因此，例如，假設圖8 (1 )中灰階部（3 )之透射部（3 b) 空間寬度為未滿3 μ m，曝光機之解像限度以下之遮光圖案 (3a)之線寬度為未滿3 。若使用上述大型LCD用曝光機 曝光時，通過灰階部（3)之曝光光線總體上會曝光不足， 因此介由該灰階部（3)曝光之陽片型光阻膜厚只是變薄而 留在基板上。也即，由於光阻係依曝光量之差而使其與普 通遮光部（1 )對應之部分和與灰階部（3 )對應之部分，其相 對於現像液之溶解度有差別，故現像後之光阻形狀，如圖 8(2)所示，通常對應於遮光部（1)之部分（1，），例如約為 1 · 3 μ m，對應於灰階部（3 )之部分（3 ’），例如為約〇 . 3 μ m550683 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for correcting a defect of a gray scale portion of a gray scale mask. [Knowledgeable Technology] In recent years, in the field of large-scale LCD screens, some people have used gray-scale screens to reduce the number of screens (fd intelligence, May 1999). Here, the 'gray scale mask' has a light shielding portion (1), a transmissive portion (2), and a gray scale portion (3) as shown in FIG. 8 (1). The gray-scale section (3) belongs to the area formed by the light-shielding pattern (3a) below the resolution limit of the exposure machine for large LCDs using gray-scale masks. The purpose of its formation is to reduce the amount of light transmitted through the area, and Those who reduce the amount of irradiation in this area and selectively change the thickness of the photoresist. The light-shielding portion (1) and the light-shielding pattern (3a) are usually formed of a film of the same material and the same thickness as chromium or a chromium compound. The resolution limit of a large LCD exposure machine using a gray scale mask is approximately 3 # m in the stepper method and approximately 4 # m in the mirror projection method. Therefore, for example, suppose Figure 8 ( 1) The width of the transmission part (3 b) of the middle gray scale part (3) is less than 3 μm, and the line width of the light-shielding pattern (3a) below the resolution limit of the exposure machine is less than 3. If exposure is performed using the above-mentioned large LCD exposure machine, the exposure light passing through the gray scale portion (3) will be underexposed as a whole, so the thickness of the positive-type photoresist film exposed through the gray scale portion (3) is only thinned and Stay on the substrate. That is, because the photoresist is based on the difference in exposure, the portion corresponding to the ordinary light-shielding portion (1) and the portion corresponding to the gray-scale portion (3) have different solubility with respect to the current image liquid. The photoresist shape, as shown in FIG. 8 (2), usually corresponds to the portion (1,) of the light-shielding portion (1), for example, about 1 · 3 μm, corresponding to the portion (3) of the gray-scale portion (3). '), For example, about 0.3 μm
\\312\2d-code\90-12\90l24054.ptd 第4頁 550683 五、發明說明（2) ，對應於透射部（2 )之部分為無光阻之部分（2，）。然後在 無光阻之部分（2 ’）進行被加工基板之第1蝕刻，將對應於 灰階部（3 )之較薄部分（3 ’）之光阻，利用研磨加工等法予 以除去，在該部分進行第2蝕刻，藉此以1張罩幕處理相當 於傳統罩幕2張之步驟，而減少罩幕張數。 [發明欲解決之課題] 上述灰階罩幕之灰階部的缺陷修正，係追求使缺陷部分 復原為與正常圖案同一形狀即與原來之形狀同樣之形狀 者。 茲具體說明習知之修正方法。 圖10(1)顯示灰階部（3)之遮光圖案（3a)由沒有缺陷之正 常微細線與空間之圖案（線寬未滿3从m，空間寬未滿3 # m) 所組成之狀態。 圖10(2)顯示灰階部（3)之遮光圖案（3a)局部缺落之狀 態。 圖1 0 ( 3 )顯示習知之修正方法。習知方法中，即使想用 與正常的遮光圖案（3a)同一寬度來修正，由於正常的遮光 圖案（3a)的寬度微小至1 //ni左右，若使用雷射CVD裝置所 能修正的寬度（例如2 // m )來形成修正膜（4 )，則修正部分 之線寬變粗至3 // m左右，而有不能獲得與正常圖案同樣之 灰階效果的問題。而且在此種狀況下，形成修正膜（4 )位 置之定位操作繁瑣而需耗費很多時間。在此，欲將線寬變 粗之部分使用雷射修理裝置加以除去，乍看之下似乎很簡 單’但若定位有誤差，則可能把鄰接之遮光圖案（3a)也除\\ 312 \ 2d-code \ 90-12 \ 90l24054.ptd Page 4 550683 V. Description of the invention (2), the part corresponding to the transmission part (2) is the part without photoresistance (2,). Then, the first etching of the substrate to be processed is performed on the non-resistive portion (2 '), and the photoresist of the thinner portion (3') corresponding to the gray-scale portion (3) is removed by grinding and other methods. This part is subjected to the second etching, thereby reducing the number of masks by the process equivalent to two sheets of conventional masks with one mask. [Problems to be Solved by the Invention] The defect correction of the gray-scale portion of the gray-scale mask described above seeks to restore the defective portion to the same shape as the normal pattern, that is, the same shape as the original shape. The method of correcting the conventional knowledge is explained in detail. Figure 10 (1) shows the state of the light-shielding pattern (3a) of the gray-scale section (3) consisting of normal fine lines and spaces with no defects (line width less than 3 m, space width less than 3 # m) . Fig. 10 (2) shows a state where the light-shielding pattern (3a) of the gray-scale portion (3) is partially missing. Figure 10 (3) shows a conventional correction method. In the conventional method, even if you want to use the same width as the normal light-shielding pattern (3a) for correction, since the width of the normal light-shielding pattern (3a) is as small as about 1 // ni, if the laser CVD device can be used to correct the width (For example, 2 // m) to form the correction film (4), the line width of the correction portion becomes thicker to about 3 // m, and there is a problem that the same grayscale effect as that of the normal pattern cannot be obtained. Moreover, in this case, the positioning operation for forming the position of the correction film (4) is cumbersome and takes a lot of time. Here, if you want to remove the thickened line width using a laser repair device, it seems simple at first glance. 'But if the positioning is wrong, the adjacent light-shielding pattern (3a) may also be removed.
\\312\2d-code\90.12\90i24054.ptd 第5頁 550683 五、發明說明（3) ___ _ 去 邛刀，而且在此種雷射修理壯罢 修正圖案形狀進行狹缝之可變：置f之定位操作及配合 修正黑缺陪(橋(短路）、突走，作極為繁瑣費時： 欲復原至與正常圖安同祥 y 斑點等）之時也一樣，若 操作及配合需要修正二二二=二，雷射修理裝置上之定位 作，極為繁瑣費時。。大小而進行狹縫的可變性操 上是困難的^ ^之修正’由於極為繁瑣而費肖，實際 本發明之目的在提供— 方法實際上有困難的灰階法，其係針對習：修正 者。 白"卩之缺陷，可簡單地加以修正 [解決課題之手段] 本發明具有下列結構： (結構1)具有灰階部之方 於:其係針對使用遮光η::陷修正方法’其特徵在 解像限度以下的遮光圖；之透二'及灰階軍幕之曝光機 域之光線透射量，而選；：：ί更透射該領 修正方法，係不使缺陷部分復=:正 相同之形狀，而形成蛊赍 /、正吊圖木 案者。 /、正吊圖案相等的灰階效果之修正圖 (結構2)如結構i之黑缺陷修正 f ® t . ^ ^ # , Λ (結構3)如結構1之白缺陷修正方法，其中，係在正 第6頁 \\312\2d-code\90-12\90124054.ptd 550683 、發明說明（4) 萨：=同等灰階效果之形狀及/或排列中，形成修正膜， (曰结m2成不同於正常圖案之修正圖案者。 陷。之領：1結構1之白缺陷修正方法’其中，係於含有白缺 之妒;大：Λ成修正膜後’在具有與正常圖案同等灰階效果 不=;或:以^ (結構5 )如結構2〜4中之紅 _ 形成你χ分 T之任一種缺陷修正方法，其中，係將 用“修置中之狹縫(siit)形狀’或除膜 之狹縫形狀，藉以進行定為具有灰階效果 (結構6) —種缺陷修正方 形成半透射胺，Μ、，4方法其中，係至少於白缺陷部分 (^ 、 、 3 1空制透射膜層之光線透射量者。 、、…構7 ) —種缺陷修正方 ^ 邊之圖案後，進行上述社構2:，係至少於除去缺陷周 (結構8)如結構卜7中之二中上任-種修正者。 階罩幕係屬於UD用軍幕者心修正方法’其中，其灰 [本發明之作用] 根據結構1，藉由形成可 之修正圖案，不必復原成與二與？圖案同等灰階效果 得與正常圖案同等之灰階：以:同之升“大’即可獲 階效果之修正圖案而言，其修正ς付與正常圖案同等灰 正常圖案相同之形狀相較，1 :之形& ’與復原為與 又，結構η，並不復原為、盘要正常並；;太Λ格。 省略復原成正常圖案之工夫，’也吊圖/相冋之形狀，可 因此〉又有定位操作或狹縫\\ 312 \ 2d-code \ 90.12 \ 90i24054.ptd Page 5 550683 V. Description of the invention (3) _ _ _ to remove the knife, and to modify the shape of the slit to modify the shape of this laser repair: The positioning operation of f and the correction of the lack of companionship (bridge (short circuit), sudden walk, extremely tedious and time-consuming: the same as when you want to restore to the normal map An Tongxiang y spots, etc.), if the operation and cooperation need to be corrected Two = two. The positioning on the laser repair device is extremely tedious and time-consuming. . It is difficult to modify the variability of the slit according to the size. ^ The correction of ^ ^ is extremely tedious and costly. In fact, the purpose of the present invention is to provide a gray-scale method that has practically difficult methods. . The defects of white " 卩 can be simply corrected [means for solving the problem] The present invention has the following structure: (Structure 1) The formula with a gray scale part is: it is directed to the use of shading η :: sink correction method 'its characteristics The shading image below the resolution limit; Transparency II 'and the amount of light transmission in the exposure area of the gray-scale military curtain are selected ;: ί is more correct for the method of correction, which does not restore the defective part =: exactly the same Shape, and form a 蛊 赍 /, who is hanging a wooden case. / 、 Correction diagram of the same gray scale effect of the positive hanging pattern (structure 2), such as the black defect correction f ^ t of the structure i. ^ (Structure 3) The white defect correction method of the structure 1, where Page 6 \\ 312 \ 2d-code \ 90-12 \ 90124054.ptd 550683, Description of the invention (4) Sa: = Correction film is formed in the shape and / or arrangement of the same grayscale effect, Those who correct the pattern different from the normal pattern. Depression. Collar: 1 structure 1 white defect correction method 'wherein it is based on jealousy containing white defects; large: Λ after the correction film' has the same grayscale effect as the normal pattern Not =; or: Use ^ (Structure 5) as red in Structures 2 ~ 4 to form any of your χ points T defect correction methods, in which "the shape of the slit (siit) in the repair" or Remove the slit shape of the film, so that it can be determined to have a grayscale effect (Structure 6)-a kind of defect correction method to form a semi-transmissive amine, M ,, 4 methods, which is at least less than the white defect portion (^ ,, 3, 1) The amount of light transmission of the transmissive film layer., ... ... Structure 7)-After the pattern of the side of the defect correction side, the above social structure 2: is performed, which is at least divided by Defect Removal Week (Structure 8) is the same as the modifier in Structure 7 bis. The step mask system belongs to the UD military curtain modifier method. Among them, its gray [function of the invention] According to structure 1, borrow By forming a correctable correction pattern, it is not necessary to restore the same grayscale effect as the two and? Compared with the normal pattern with the same gray normal pattern, 1: the shape & 'is restored to and again, the structure η is not restored, the disk must be normal; too Λ grid. Omit to restore the normal pattern The time, 'also hanging pictures / relative shapes, can be> there are positioning operations or slits
C:\2D-OODE\9CM2\90124054.ptdC: \ 2D-OODE \ 9CM2 \ 90124054.ptd
550683550683
550683550683
五、發明說明（6) 刀的疋位$業，又可在包括除去圖案領域的整個缺陷領域 均勻地形成修正圖f，故可獲得更均句的灰階效果。 根據結構8 ’雖然通常的半導體用灰階罩幕係使用半透 射膜’並無形成曝光機解像限度以下之微細圖案之例，假 設㈣成曝光機解像限度以下之微細圖案之半導體用灰階 罩幕’也因為罩幕尺寸小’故即使化費一點時間也可用習 知修正方法應付，但是LCD用灰階罩幕的尺寸較大且其缺 陷部位也多，若使用習知修正方法則步驟負擔極大，實際 上修正，困難的，因此，本發明之修正方法在lcd用灰階 罩幕的實用化上是必要而不可或缺的。 再者，上述結構中，能獲得與正常圖案同等灰階效果的 修正圖案，以相對於正常圖案之透射率在± Μ %以内為 宜，在± 1 0 %以内則更佳。 [本發明之最佳實施形態] 本發明灰階罩幕的灰階部缺陷修正方法，可列舉下列4 個方法： (實施形態1) 黑缺陷之斑點修正 在貫施形悲1中，並非全部除去灰階部之黑缺陷部分（橋 (短路）突起等）而復原為與正常圖案相同之形狀，而係在 具有與正常圖案同等灰階效果之形狀及/或排列中，使用 雷射修理裝置專局部性除去含有黑缺陷部分之膜，形成不 同於正常圖案之修正圖案而能獲得與正常圖案具同等灰階 效果之修正圖案者。 ^V. Explanation of the invention (6) The knife position of the knife can uniformly form the correction map f in the entire defect area including the removal of the pattern area, so that a more uniform gray-scale effect can be obtained. According to the structure 8 'Although a normal gray scale mask for semiconductors uses a semi-transmissive film', there is no example of forming a fine pattern below the resolution limit of the exposure machine, assuming that a gray pattern for the semiconductor is formed with a fine pattern below the resolution limit of the exposure machine. The level mask is also small because of the size of the mask, so even if it takes a little time, it can be dealt with by conventional correction methods. However, the gray scale mask for LCD is large in size and has many defects. If the conventional correction method is used, The burden of the steps is huge, and it is actually difficult to correct. Therefore, the correction method of the present invention is necessary and indispensable for the practical use of the gray scale cover for LCDs. Furthermore, in the above-mentioned structure, a correction pattern capable of obtaining the same grayscale effect as the normal pattern, and the transmittance relative to the normal pattern is preferably within ± M%, and more preferably within ± 10%. [Best Embodiment of the Present Invention] The method for correcting the gray-scale defects of the gray-scale mask of the present invention can be exemplified by the following four methods: (Embodiment 1) The speckle correction of black defects is not all in the first embodiment. Remove the black defective parts (bridge (short-circuit) protrusions, etc.) of the gray scale part to restore the same shape as the normal pattern, and use the laser repair device in the shape and / or arrangement with the same gray scale effect as the normal pattern. Partially remove the film containing the black defect part, form a correction pattern different from the normal pattern, and obtain a correction pattern with the same grayscale effect as the normal pattern. ^
\\312\2d-code\90-12\90124054.ptd 第9頁 550683 五、發明說明（7) 例如’如圖1 (1)所示，若在灰階部（3)發生橋（短 路）j 5 )，則如圖1 ( 2 )所示，使用雷射照射等，針對含有黑 缺陷部分之膜加以點性等距離之局部性除去（藉由形成開 口（ 6 ))’而形成能獲得與正常圖案具同等灰階效之修正 圖案。 玉又’如圖2 (1 )所示，若在灰階部（3 )發生突起7時，則如 圖2、（ 2 )所示，使用雷射照射等，針對含有黑缺陷部分之膜 ^口 ^點性等距離之局部性除去（藉由形成開口（ 6 ))，而形 成能獲=與正常圖案具同等灰階效果之修正圖案。 安r q ^ ^ 口 ，「含有黑缺陷部分之膜」中也包含有遮光圖 光：⑴’遮光圖案(3a)和遮光部⑴之-部分 (二和遮光部⑴之邊緣。又因其對於開始 射修L ΐ ΐ ί 置，並無嚴格之要求（大約即可）故雷 > —衣置之定位也變得很簡單。 定ί::: ί W,好先把具有灰階效果的狹縫形狀固 狹縫形狀，節距”ί再進行修正。藉由預先固定 形狀及檯面之輪送節距，再進 右預先固定狹缝 則更佳。再者，本發明中，全部修 輸送節距而進行修正 =更狹邊形狀和檯面 若在灰階部發生二陷mr复雜。 狹縫形狀加以修正。缺p…也可如上述以預先固定之\\ 312 \ 2d-code \ 90-12 \ 90124054.ptd Page 9 550683 V. Description of the invention (7) For example, as shown in Figure 1 (1), if a bridge (short circuit) occurs in the gray scale (3) j 5), as shown in FIG. 1 (2), using laser irradiation or the like, a point-like and equidistant partial removal of the film containing black defects (by forming the opening (6)) ′ can be obtained. A correction pattern with the same grayscale effect as the normal pattern. As shown in FIG. 2 (1), if the protrusion 7 occurs in the gray scale portion (3), as shown in FIG. 2 (2), laser irradiation or the like is used for the film containing the black defect portion ^ The partial removal of the mouth and the point is equidistant (by forming the opening (6)) to form a correction pattern that can obtain the same grayscale effect as the normal pattern. Ann rq ^ ^ mouth, "the film containing the black defect part" also contains light-shielding light: ⑴ 'light-shielding pattern (3a) and the light-shielding part ⑴-part (the edge of the second and light-shielding part ⑴. Also because of its Shoot repair L ΐ 大约, there is no strict requirement (approximately), so Lei>-the positioning of the clothes is also very simple. Set til ::: ί W, first narrow the gray scale effect The shape of the slit is fixed to the shape of the slit, and the pitch is adjusted again. It is better to fix the shape and the surface of the table to advance the pitch, and then enter the right to pre-fix the slit. Correction from the distance = If the shape of the narrower side and the mesa are dimpled in the gray scale, the shape of the slit is corrected. The shape of the slit is corrected. The lack of p ... can also be fixed in advance as described above.
\\312\2d-code\90-12\90l24054 Ptd 第10頁 550683 五、發明說明（8) (實施形態2 ) 白缺陷之斑點修正 在實施形悲2中’並不是把灰階部的白缺陷部分（斷線、 圖案缺落等）全部埋填（在缺陷部分形成同樣之圖案），復 原為與正吊’圖案相同形狀，而是藉由雷射Cvd修正裝置等 形成局部的鉻系薄膜等，形成不同於正常圖案之修正圖 案，而獲得與正常圖案同等之灰階效果。 ° 例如，如圖3(1)所示，在灰階部（3)之遮光圖案（3㈧發 生斷線時，如圖3(2)所示，在斷線部分形成點性的修正^ (4)，使其獲得與未斷線之正常圖案同等之灰階效果（形能 2-1)。此時，為了與發生於修正膜（4)上下空間的透射量“ 取得平衡，可使修正膜（4)之尺寸稍大於遮光圖案（3& 線寬度。 又 圖案 後， 的最 階效 此 並無 作或 在 縫形 正 ° ，=^4(1)所示，在灰階部（3)之遮光圖案（3a)發生 如圖4(2)所示，視需要除去缺陷周邊之圖案 f f ϋ所示’使用雷射CVD裝置等形成其所能成膜 :\ : 置修正膜（4 )，形成與正常圖案具有同等灰 果=^正膜圖案（形態2-2)。 f %合’因為對於點性形成的修正膜（4 )形狀和位置 。、要求（大約即可），故雷射修理裝置之定位、操 J縫白;：變性操作也變得很簡單。 、 1 2中’最好先把具有灰階效果的成膜尺寸（狹 ^ 膜間隔（檯面的輸送節距）固定後再進行修 精 預 固定狹縫形狀，可省略狹縫之可變性操作。\\ 312 \ 2d-code \ 90-12 \ 90l24054 Ptd Page 10 550683 V. Description of the invention (8) (Embodiment 2) The speckle correction of white defects in the implementation of Form 2 does not mean that the grayscale part is white. Defective parts (broken lines, missing patterns, etc.) are all buried (the same pattern is formed on the defective parts), and restored to the same shape as the dangle pattern, but a local chrome-based film is formed by a laser Cvd correction device, etc. Etc., forming a correction pattern different from the normal pattern, and obtaining a grayscale effect equivalent to the normal pattern. ° For example, as shown in FIG. 3 (1), when a light-shielding pattern (3㈧) occurs in the gray-scale part (3), as shown in FIG. 3 (2), a pointwise correction is formed at the broken part ^ (4 ) To obtain the same grayscale effect (normal energy 2-1) as the normal pattern that is not disconnected. At this time, in order to balance the transmission amount "in the upper and lower spaces of the correction film (4)", the correction film can be made (4) The size is slightly larger than the light-shielding pattern (3 & line width. After the pattern, the maximum effect of this is not done or is in the positive shape of the seam, = ^ 4 (1), in the grayscale part (3) The light-shielding pattern (3a) occurs as shown in FIG. 4 (2). If necessary, the pattern around the defect is removed as shown in the figure ff. 'Use a laser CVD device to form a film that can be formed: \: Set the correction film (4), Form the same gray pattern as the normal pattern = ^ positive film pattern (morphology 2-2). F %% ′ Because of the shape and position of the correction film (4) formed by dots, the requirements (approximately), so the laser The positioning of the repair device and the operation of the white seam ;: The denaturation operation is also very simple. It is best to use the film formation size (narrow ^ film interval (table top) with gray scale effect) Feed pitch) be repaired and then fixing the fine pre-fixed slit shape, the slits may be omitted variability of operation.
第11頁 55〇683 五、發明說明（9) 错由預先固定檯面之輸送節距，可省略第2個以降之定 ^ 若預先固定狹縫形狀及檯面之輸送節距，再針對與上 <罩幕上相同之缺陷全部加以修正，則更佳。 若在灰卩白部之遮光圖案（3 a)發生缺落（凹部）時，也可如 上述，以預先固定之成膜尺寸加以修正。 ，者對表通系的遮光部（1 )之凹缺陷（9 )，可用習知方 忐加以修正。 (實施形態3 ) 具轭形您3中，將顯示白缺陷修正之直能。 例如，如圖β (1 )所一 ,. /、 心 空間寬度未滿3心)所之^光在/安階部（3)(線寬度未滿3，、 需要除去發生圖宰缺發生圖案缺落時，視 (2))，在發生圖:^ ΐ 圖案（3a)之剩餘部分（圖5 (3 DH γ ΐ 、洛的整個領域形成修正膜（8 )(圖5 ，冉在该修正臌m 之狹縫狀空間（3b，） i ^ Γ修理裝置等形成等距離 等灰階效果之修正圖：圖=可獲得具有與正常圖案同 可任意變動，視体。此時，線和空間的數量 ^此面積而定。 若設定雷射修理裝置的狹 時，遮光圖案（3a，）μ | &人見沒為取小尺寸（例如1 //m) 為1.2〜1.5^^時，遮光圖荦冒(3呈鑛窗狀。若設定狹缝寬度 修理裝置的狹缝寬声U 的邊緣會呈直線。雷射 k U设疋在1 0〜1 常圖案-樣，❻因為遮光圖宰：之根數’乍看起來和正 ^ ^ ^ ^1V a V1 (3 b ^ ”止吊圖案相同。根數夕、 夕或 再者，若修正成和w為宜。Page 11 55〇683 V. Description of the invention (9) If the conveying pitch of the table is fixed in advance, the second one can be omitted. If the slit shape and the conveying pitch of the table are fixed in advance, then It is better to correct all the defects on the screen. If the shading pattern (recessed part) occurs in the gray part of the white part (3 a), it can also be corrected with the film size fixed in advance as described above. The concave defect (9) of the light-shielding part (1) of the surface communication system can be corrected by the conventional method. (Embodiment 3) In the yoke 3, the direct energy of white defect correction will be displayed. For example, as shown in Fig. Β (1), ./, the width of the heart space is less than 3 hearts), the light in the / an step portion (3) (the line width is less than 3, and the pattern of the occurrence of the defect needs to be removed) When it is missing, see (2)), in the occurrence of the figure: ^ ΐ The remaining part of the pattern (3a) (Figure 5 (3 DH γ ΐ, the entire area of Luo forms a correction film (8) (Figure 5, in this correction臌 m's slit-like space (3b,) i ^ Γ Repairing equipment and other correction diagrams that form equal-level and gray-scale effects: Figure = can be obtained with the same pattern as the normal pattern, which can be arbitrarily changed. At this time, the line and space The amount of light ^ depends on the area. If the narrowness of the laser repair device is set, the light-shielding pattern (3a,) μ | & is not considered to take a small size (such as 1 // m) is 1.2 ~ 1.5 ^^, The light-shielding pattern (3 is in the form of a mine window. If the slit width of the repair device is set, the edge of the wide U sound will be a straight line. The laser k U is set at 10 ~ 1. At first glance, the number of roots is the same as that of Zheng ^ ^ ^ ^ 1V a V1 (3 b ^ ”. The hanging number is the same. If the number of roots is evening, evening or more, it is better to modify it to w.
\\312\2d-code\90-12\90124054.ptd\\ 312 \ 2d-code \ 90-12 \ 90124054.ptd
1M 第12胃 550683 五、發明說明（ίο) 少時，會明顯地不同於正常圖案。 實施形態3中，最好先把具有灰階效果在狹縫形狀（空間 形狀）、檯面的輸送節距固定後再進行修正。藉由預先1固0 定狹縫形狀，可省略狹縫之可變性操作。藉由預先固定接 面之輸送節距，可省略第2個以降之定位。該方法為最佳1 修正方法之一。因為，雖然最小加工狹缝寬度（也即空間 (3b’）之寬度）不能做得太小，但可使檯面之輪送節距相當 小（可用0 · 1 // m單位來設定）例如藉由使遮光圖案（3 a，）的 線寬度小一點且使線的根數多一點，作成與曝光機解像限 度以下之遮光圖案同等透射率水準的圖案，而進行可獲得 與正常圖案同等灰階效果的修正。又，和上述形態2-2'之于 修正方法相較，其作業簡單而且不費時。而且，因其對於 形成修正膜（8 )的位置精準度，並無嚴格之要求，故容易 形成修正膜（8 )。 實施形態3中，把狹縫形狀及檯面的輸送節距預先固定 後再將與上述相同的缺陷全部予以修正，則更佳。 再者’對於通常的遮光部（1)之凹缺陷（9)，可用習知方 法加以修正。 (實施形態4 ) 貫施形態4中，例如圖6所示，係在灰階部（3 )發生缺陷 時’除去灰階部（3 )的整個遮光圖案後，在灰階部（3 )的全 領域形成半透射膜（半色調膜）（丨〇 )，藉由膜材料及膜厚控 制該半透射膜（1 〇 )的透射率，而使其獲得與正常圖案同等 之灰階效果者（形態4-1 )。1M 12th stomach 550683 5. When the invention description is small, it will be obviously different from the normal pattern. In the third embodiment, it is preferable that the gray scale effect is fixed in the slit shape (space shape) and the conveying pitch of the table is fixed before the correction. By fixing the slit shape in advance, the variable operation of the slit can be omitted. By pre-fixing the conveying pitch of the interface, the second positioning can be omitted. This method is one of the best 1 correction methods. Because, although the minimum processing slit width (that is, the width of the space (3b ')) cannot be made too small, the table feed pitch can be made relatively small (can be set in units of 0 · 1 // m) such as borrow By making the line width of the light-shielding pattern (3a,) smaller and increasing the number of lines, a pattern having the same level of transmittance as the light-shielding pattern below the exposure limiter of the exposure machine can be created, and the same gray pattern as the normal pattern can be obtained. First-order effect correction. Moreover, compared with the correction method of the above-mentioned form 2-2 ', the operation is simple and does not take time. Moreover, since it does not have strict requirements on the positional accuracy of forming the correction film (8), it is easy to form the correction film (8). In the third embodiment, it is more preferable to fix the slit shape and the conveying pitch of the table in advance, and then correct all the same defects as above. Furthermore, the concave defect (9) of the normal light-shielding portion (1) can be corrected by a conventional method. (Embodiment 4) In Embodiment 4, for example, as shown in FIG. 6, when a defect occurs in the grayscale portion (3), the entire light-shielding pattern of the grayscale portion (3) is removed, and then the grayscale portion (3) is removed. A semi-transmissive film (halftone film) (丨 〇) is formed in all areas, and the transmittance of the semi-transmissive film (10) is controlled by the film material and film thickness, so that it can obtain a grayscale effect equivalent to a normal pattern ( Form 4-1).
\\312\2d-code\90-12\90124054.ptd\\ 312 \ 2d-code \ 90-12 \ 90124054.ptd
第13頁 550683 五、發明說明（11) 又，如圖7所示，在遮光圖案（3a)之圖案缺落發生之領 1 =成半透射膜（10)，藉由該半透射膜（1〇)而使其 正吊圖案同等之灰階效果者（形態4_2)。 ” 實施形態4 也可將發生缺陷的灰階部圖案之 留下之狀態下’在灰階部的整個 A;膜’藉以使其獲得與正常圖案同等之灰階效果(形 等再；考= ::11°)的材料方面，可例舉紹、鎢、碳 ’ 右考里耐樂性和附荖％ *從 Α 宜。使膜厚變薄的手段方面又、，以1 2 3 4有鉻之材料等為 間至通常形成遮光膜’例如可藉由縮短雷射照射時 方法，就不必形成5左右山的方法來達成。依該 修正時間之效。另外尚二下之彳政細圖案，且可收縮短 厚減薄之手段。 D牛s周節雷射輸出之方法作為使膜 (實施例） 在實施例中，針對卜a無 罩幕的灰階部，以大型LCDW形態Η施行修正後之灰階 確認其可獲得與正常 曝光機實施曝光測試，得以 果）。 吊圖木同寺之灰階效果（減低照射量效 万/ί：」間早修正習知之Page 13 550683 V. Description of the invention (11) In addition, as shown in FIG. 7, the pattern missing in the light-shielding pattern (3a) leads to a semi-transmissive film (10), and the semi-transmissive film (1) 〇) and make the same grayscale effect as the front hanging pattern (pattern 4_2). In the fourth embodiment, the entire A in the grayscale portion; the film can be left in the state of the grayscale portion pattern where the defect occurs, so that it can obtain a grayscale effect equivalent to the normal pattern (shape, etc .; test = :: 11 °) In terms of materials, Shao, Tungsten, and Carbon can be cited. Right Kauri Nile resistance and 荖% * from Α. In terms of means to reduce the thickness of the film, there are 1 2 3 4 The materials such as chromium are usually formed into a light-shielding film. For example, it can be achieved by shortening the time of laser irradiation, and it is not necessary to form a method of about 5 mountains. According to the effect of the correction time. And the method of shortening the thickness and reducing the thickness can be collected. The method of laser output of the weekly festival is used to make the film (Example) In the example, the gray scale part without a cover is modified in a large LCDW form. The gray scale confirms that it can be obtained by performing an exposure test with a normal exposure machine, and the results are achieved.)
\\3l2\2d-code\90-12\90124054.ptd 第14頁 1 ί ί Γ亚非限於上述實施形態等者。 2 味Γ:，ΐΐ:之遮光圖案(3a)，即使係如圖9所… 3 線型者，也可適用本發明。 Μ 9所不之虛 4 [發明之效果] 5 如上所述，根據本發明之 550683 五、發明說明（12) 修正方法實際上難以修正的灰階部缺陷。 尤其，本發明之修正方法在LCD用灰階罩幕的實用化上 是必要而不可或缺的。 [元件編號之說明] 1 遮光部 2 透射部 3 灰階部 3 a 遮光圖案 3b 透射部 4 修正膜 5 橋（短路） 6 開口 7 突起 8 修正膜 9 凹缺陷 10 半透射膜\\ 3l2 \ 2d-code \ 90-12 \ 90124054.ptd Page 14 1 ί Γ Asian and African are not limited to the above-mentioned embodiments and the like. 2 The light-shielding pattern (3a) of the flavor Γ :, ，: can be applied to the present invention even if it is a linear pattern as shown in FIG. 9 ... M 9 is not false 4 [Effects of the invention] 5 As mentioned above, according to 550683 of the present invention V. Description of the invention (12) The gray scale part defect which is actually difficult to correct by the correction method. In particular, the correction method of the present invention is necessary and indispensable for the practical application of the gray scale cover for LCD. [Explanation of element number] 1 light-shielding part 2 transmission part 3 gray-scale part 3 a light-shielding pattern 3b transmission part 4 correction film 5 bridge (short circuit) 6 opening 7 protrusion 8 correction film 9 concave defect 10 semi-transmission film
C:\2D-CODE\90-12\90124054.p t d 第15頁 550683 圖式簡單說明 圖1 (1 )、（ 2)為說明實施形態1之灰階部黑缺陷修正方法 之部分俯視圖。 圖2 (1 )、（ 2 )為說明實施形態1之灰階部其他黑缺陷修正 方法之部分俯視圖。 ® 3 (1 )、（ 2 )為說明實施形態2之灰階部白缺陷修正方法 之部分俯視圖。 圖4 (1 )〜（3 )為說明實施形態2之灰階部其他白缺陷修正 方法之部分俯視圖。 圖5 (1 )〜（4 )為說明實施形態3之灰階部白缺陷修正方法 之部分俯視圖。 圖6為說明實施形態4之灰階部白缺陷修正方法之部分俯 視圖。 圖7 (1 )、（ 2 )為說明實施形態4之灰階部其他白缺陷修正 方法之部分俯視圖。 圖8 (1 )、（ 2)為說明灰階罩幕之圖，（1 )為部分俯視圖， (2 )為部分剖面圖。 圖9為說明灰階部其他形態之部分俯視圖。 圖1 0 (1 )〜（3 )為說明習知之灰階部修正方法之部分俯視 圖。C: \ 2D-CODE \ 90-12 \ 90124054.p t d P.15 550683 Brief description of drawings Figures 1 (1) and (2) are partial top views illustrating the method for correcting the black defect of the gray scale in the first embodiment. Figs. 2 (1) and (2) are partial plan views illustrating other black defect correction methods for the gray-scale portion of the first embodiment. ® 3 (1) and (2) are partial plan views illustrating the method for correcting the gray-level white defects in the second embodiment. Figs. 4 (1) to (3) are partial plan views illustrating another method for correcting white defects in the grayscale portion of the second embodiment. 5 (1) to (4) are partial plan views illustrating a method for correcting a white defect in a grayscale portion according to the third embodiment. Fig. 6 is a partial plan view illustrating a method for correcting a gray-scale portion white defect in the fourth embodiment. Figs. 7 (1) and (2) are partial plan views illustrating another method for correcting white defects in the grayscale portion of the fourth embodiment. Figures 8 (1) and (2) are diagrams illustrating the gray-scale mask, (1) is a partial top view, and (2) is a partial cross-sectional view. FIG. 9 is a partial plan view illustrating another form of the gray scale portion. Figs. 10 (1) to (3) are partial top views illustrating a conventional method for correcting a grayscale portion.
C:\2D-CODE\90-12\90124054.ptd 第16頁C: \ 2D-CODE \ 90-12 \ 90124054.ptd Page 16
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000301507A JP3556591B2 (en) | 2000-09-29 | 2000-09-29 | Defect repair method of gray tone part in gray tone mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW550683B true TW550683B (en) | 2003-09-01 |
Family
ID=18783040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090124054A TW550683B (en) | 2000-09-29 | 2001-09-28 | Method for correcting defect in gray tone part in gray tone mask |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3556591B2 (en) |
| KR (1) | KR100524109B1 (en) |
| TW (1) | TW550683B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI393994B (en) * | 2007-07-03 | 2013-04-21 | Hoya Corp | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4021235B2 (en) * | 2002-04-16 | 2007-12-12 | Ｈｏｙａ株式会社 | Gray-tone mask defect inspection method and defect inspection apparatus, and photomask defect inspection method and defect inspection apparatus |
| JP4297693B2 (en) | 2003-01-31 | 2009-07-15 | 株式会社ルネサステクノロジ | Photomask, photomask manufacturing method, and photomask manufacturing apparatus |
| TWI368327B (en) * | 2005-01-17 | 2012-07-11 | Samsung Electronics Co Ltd | Optical mask and manufacturing method of thin film transistor array panel using the optical mask |
| JP4559921B2 (en) * | 2005-06-20 | 2010-10-13 | エスアイアイ・ナノテクノロジー株式会社 | Gray tone pattern film defect correction method |
| KR100936716B1 (en) * | 2005-09-23 | 2010-01-13 | 엘지이노텍 주식회사 | Method for repairing defect of half tone mask and repaired half tone mask |
| JP4752495B2 (en) * | 2005-12-22 | 2011-08-17 | 大日本印刷株式会社 | Defect correction method for photomask with gradation |
| JP4736818B2 (en) * | 2006-01-20 | 2011-07-27 | 大日本印刷株式会社 | Method for correcting defect in photomask having gradation and photomask having gradation |
| TWI388923B (en) * | 2006-02-02 | 2013-03-11 | Hoya Corp | Defect repairing method for a gray tone mask and gray tone mask |
| KR100831675B1 (en) * | 2006-05-09 | 2008-05-22 | 주식회사 하이닉스반도체 | A photo mask for establishing a best focus and method of establishing best focus using the same |
| JP4968464B2 (en) * | 2006-07-05 | 2012-07-04 | 大日本印刷株式会社 | Method for correcting defective portion of photomask having gradation and method for evaluating correction portion |
| JP5037231B2 (en) * | 2006-08-02 | 2012-09-26 | 株式会社エスケーエレクトロニクス | Defect correcting method for halftone mask and halftone mask with defect corrected |
| JP4591928B2 (en) * | 2006-11-24 | 2010-12-01 | Ｈｏｙａ株式会社 | Photomask defect inspection method and defect inspection apparatus |
| TWI422962B (en) * | 2006-12-05 | 2014-01-11 | Hoya Corp | Gray tone mask inspecting method, method of producing a gray tone mask for use in manufacturing a liquid crystal device and pattern transferring method |
| JP5036349B2 (en) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask manufacturing method |
| JP5102912B2 (en) * | 2007-03-31 | 2012-12-19 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method, gray-tone mask manufacturing method, and pattern transfer method |
| JP2009020312A (en) * | 2007-07-12 | 2009-01-29 | Hoya Corp | Method for correcting defect in gray tone mask, method for manufacturing gray tone mask, gray tone mask, and method for transferring pattern |
| JP5037262B2 (en) * | 2007-08-10 | 2012-09-26 | 株式会社エスケーエレクトロニクス | Defect correction method for multi-tone photomask and multi-tone photomask with defect corrected |
| KR101264114B1 (en) | 2007-08-31 | 2013-05-13 | 삼성전자주식회사 | Method of creating photomask layout, computer readable media including a sequence of programmed instructions stored thereon for implementing the same and mask imaging system |
| JP5296432B2 (en) * | 2008-07-04 | 2013-09-25 | 株式会社エスケーエレクトロニクス | Multi-tone photomask and method for correcting the same |
| JP5283441B2 (en) * | 2008-07-04 | 2013-09-04 | 株式会社エスケーエレクトロニクス | Multi-tone photomask and method for correcting the same |
| KR101179000B1 (en) * | 2008-07-04 | 2012-09-13 | 가부시키가이샤 에스케이 일렉트로닉스 | Multilevel gradation photomask and method for repairing same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3053097B2 (en) * | 1988-10-12 | 2000-06-19 | 株式会社日立製作所 | Photomask defect detection method and apparatus |
| JP3207974B2 (en) * | 1993-07-08 | 2001-09-10 | レーザーテック株式会社 | Photomask defect inspection method |
| KR0161389B1 (en) * | 1995-02-16 | 1999-01-15 | 윤종용 | A mask and the method of pattern forming using the same |
-
2000
- 2000-09-29 JP JP2000301507A patent/JP3556591B2/en not_active Expired - Lifetime
-
2001
- 2001-09-28 TW TW090124054A patent/TW550683B/en not_active IP Right Cessation
- 2001-09-29 KR KR10-2001-0061012A patent/KR100524109B1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI393994B (en) * | 2007-07-03 | 2013-04-21 | Hoya Corp | Method of correcting a defect in a gray tone mask, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020025843A (en) | 2002-04-04 |
| JP3556591B2 (en) | 2004-08-18 |
| JP2002107913A (en) | 2002-04-10 |
| KR100524109B1 (en) | 2005-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW550683B (en) | Method for correcting defect in gray tone part in gray tone mask | |
| TW531691B (en) | Defect correcting method and device of photomask | |
| TW200407963A (en) | Method for determining the construction of a mask for the micropatterning of semiconductor substrates by means of photolithography | |
| JP5668168B1 (en) | Proximity exposure photomask | |
| KR20040087948A (en) | Method of inspecting a defect of graytone mask | |
| CN108663855B (en) | A kind of production method and display panel of display panel | |
| TW200933289A (en) | Photomask, method of manufacturing the photomask, and method of transferring a pattern | |
| KR100650365B1 (en) | Defect correcting method of a grayton mask | |
| JP2006208429A (en) | Method for forming double-side mask | |
| TWI296737B (en) | Maskless optical writer | |
| JP2008294442A (en) | Optical attenuation filter for correcting ellipticity and uniformity depending on field | |
| DE602005019711D1 (en) | Method and system for an improved lithographic process | |
| US9372369B2 (en) | Liquid crystal panel and manufacturing method thereof | |
| US7582396B2 (en) | Hybrid phase-shift mask and manufacturing method thereof | |
| TW200537591A (en) | Method for repairing a phase shift mask | |
| TW540107B (en) | Manufacturing method of photomask | |
| TWI380349B (en) | Exposure method | |
| JP2006210553A (en) | Aligner, illuminance distribution correction filter, and process for fabricating semiconductor device | |
| CN106468854A (en) | Mask and its manufacture method | |
| JP5012002B2 (en) | Proximity exposure method | |
| CN109116675A (en) | Improve the OPC modification method of hot spot process window | |
| US11934106B2 (en) | Optical proximity correction device and method | |
| US11089272B1 (en) | Systems and methods for high-contrast spatial light modulation | |
| JP2009069223A (en) | Method for producing resin thin film | |
| US7001695B2 (en) | Multiple alternating phase shift technology for amplifying resolution |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |