TW546185B - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method Download PDF

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Publication number
TW546185B
TW546185B TW91111401A TW91111401A TW546185B TW 546185 B TW546185 B TW 546185B TW 91111401 A TW91111401 A TW 91111401A TW 91111401 A TW91111401 A TW 91111401A TW 546185 B TW546185 B TW 546185B
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Taiwan
Prior art keywords
polishing
substrate
positioning ring
polishing surface
positioning
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TW91111401A
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Chinese (zh)
Inventor
Tetsuji Togawa
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Ebara Corp
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Priority claimed from JP2001013899A external-priority patent/JP2002187060A/en
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Publication of TW546185B publication Critical patent/TW546185B/en

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Abstract

A polishing apparatus comprises a first polishing table having a first polishing surface, a substrate carrier for holding a substrate and positioning the substrate so as to bring a surface of the substrate into contact with the first polishing surface, a pressing mechanism for pressing, against the first polishing surface, the surface of the substrate which has been brought into contact with the first polishing surface by the substrate carrier, a retainer ring mounted on the substrate carrier so as to surround the substrate which has been pressed against the first polishing surface by the pressing mechanism, and a retainer-ring-position-adjustment mechanism for adjustably positioning the retainer ring relative to the substrate, which has been pressed against the first polishing surface, in directions toward and away from the first polishing surface.

Description

546185 五、發明說明(1) 【發明領域】 本發明係關於一種用以執行一基材平坦化拋光的裝 置,尤指一種用以執行一基材(例如一個半導體晶圓)的化 學機械拋光的裝置,以磨平該基材。 【發明背景】 在早期的拋光裝置中,將拋光的基材係放置於一基材 載具下表面。接者’為了抛光該基材’當一抛光研磨料被 供給一拋光墊的拋光塾表面時此基材被壓至該撤光墊,以 在基材和拋光墊之間產生一相對運動。該基材載具並提供 一定位環以防止該基材在拋光期間從基材載具的下表面移 動。該基材係藉由環繞四周的定位環而保持定位於載具 Jl 〇 ' 然而,在彈性拋光墊執行拋光的期間,發生在工件外 圍的過度拋光會造成一稱為’邊緣圓化,的效應。為了抑止 此邊緣圓化效應,該定位環係被壓至該拋光墊以在它的外 圍略微向下收縮。 在如上述的習知抛光裝置中,雖然將定位環施壓至抛 光塾可解決邊緣圓化的問題並因而改進被拋光工件的表面 拋光精度,但是卻也造成研磨料在被拋光工件表面上的分 配不均,因而減慢拋光速度,從而使生產力降低。此現象 在拋光表面為金屬薄膜時將更加明顯。因而,此一習知撤 光裝置十分不適用於南速抛光,因為高速拋光需對拋光表 面供給大量的研磨料。 近年來已發展出使用一固定研磨件而非一拋光墊的拋546185 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a device for performing planarization and polishing of a substrate, and more particularly to a chemical mechanical polishing for performing a substrate (such as a semiconductor wafer). Device to smooth the substrate. [Background of the Invention] In the early polishing apparatus, a polished substrate was placed on the lower surface of a substrate carrier. In order to polish the substrate, when a polishing abrasive is supplied to the polishing pad surface of a polishing pad, the substrate is pressed to the light-removing pad to generate a relative movement between the substrate and the polishing pad. The substrate carrier also provides a positioning ring to prevent the substrate from moving from the lower surface of the substrate carrier during polishing. The substrate is kept positioned on the carrier J10 by a positioning ring that surrounds the periphery. However, during the polishing of the elastic polishing pad, excessive polishing that occurs on the periphery of the workpiece will cause an effect called 'edge rounding'. . In order to suppress this edge rounding effect, the positioning ring system is pressed to the polishing pad to shrink slightly downwards at its periphery. In the conventional polishing device as described above, although pressing the positioning ring to the polishing pad can solve the problem of edge rounding and thus improve the surface polishing accuracy of the workpiece to be polished, it also causes the abrasive on the surface of the workpiece to be polished. Uneven distribution results in slower polishing and lower productivity. This phenomenon is more pronounced when the polished surface is a metal film. Therefore, this conventional light-removing device is very unsuitable for south-speed polishing, because high-speed polishing requires a large amount of abrasive to be supplied to the polishing surface. In recent years, polishing using a fixed abrasive member instead of a polishing pad has been developed.

313737.ptd 第5頁 546185 今 五、發明說明(2) 置。因為當一工件被壓至使用一固定研磨件的拋光裝 捋’幾乎沒有形狀變形產生,僅產生極少量的邊緣圓化 1應’甚至不需定位環所施的向下壓力。然而若將此一固 磨件應用於一習知的拋光裝置而用於拋光時,因為定 襄正被壓於一固定研磨件上,因此該定位環將會磨損的 陕速而具有較短的使用壽命,進而造成成本的相對增 加。 【發明概述】 、 因此,本發明的一個目的是提供能執行拋光並減少 邊緣圓化效應的一拋光裝置和方法,從而改進已拋光工件 的抛光精度並供給大量拋光溶液至拋光表面,增加拋光速 度並改進生產能力。 為完成上述之目的,根據本發明的第一態樣,一拋光 裝置1,如第1圖和第2圖所示例子,包括一基材载具 其具有一環繞基材S的定位環3以定位該基材s ; —拋光工 具i5,用以拋光該基材S; —基材施壓機構π,用以帶引 基材S與該抛光工具1 5的抛光表面1 7相接觸;一定位環 施壓機構16,用以帶引該定位環3與拋光表面17相接觸; 以及一定位環—定位調整機構4,用以調整定位環3和拋光 表面17之間的位置關係,以在基材S與拋光表面17相接觸 日守在兩者間形成^一間隙。 這個配置具有一定位環施壓機構1 6以將定位環3壓至 抛光表面17。因此當基材表面S A被拋光表面1 7拋光時,其 將可防止邊緣圓化的形成,從而改進拋光基材S的表面拋313737.ptd Page 5 546185 Today 5. Description of Invention (2). Because when a workpiece is pressed to a polishing device using a fixed abrasive member, there is almost no shape deformation, and only a small amount of edge rounding is generated, even without the downward pressure exerted by the positioning ring. However, if this solid abrasive is applied to a conventional polishing device and used for polishing, since Dingxiang is being pressed on a fixed abrasive, the positioning ring will be worn and has a short speed. Service life, which in turn causes a relative increase in cost. [Summary of the Invention] Therefore, an object of the present invention is to provide a polishing device and method capable of performing polishing and reducing edge rounding effects, thereby improving the polishing accuracy of a polished workpiece and supplying a large amount of polishing solution to a polishing surface to increase the polishing speed. And improve production capacity. In order to achieve the above object, according to a first aspect of the present invention, a polishing device 1, as shown in the examples of FIGS. 1 and 2, includes a substrate carrier having a positioning ring 3 surrounding the substrate S to Positioning the substrate s;-a polishing tool i5 for polishing the substrate S;-a substrate pressure mechanism π for guiding the substrate S to contact the polishing surface 17 of the polishing tool 15; a positioning A ring pressing mechanism 16 is used to bring the positioning ring 3 into contact with the polishing surface 17; and a positioning ring-positioning adjustment mechanism 4 is used to adjust the positional relationship between the positioning ring 3 and the polishing surface 17 so that The material S is in contact with the polishing surface 17 and a gap is formed therebetween. This configuration has a positioning ring pressing mechanism 16 to press the positioning ring 3 to the polishing surface 17. Therefore, when the substrate surface S A is polished by the polishing surface 17, it can prevent the formation of edge rounding, thereby improving the surface polishing of the polished substrate S.

313737.ptd 第6頁 546185 五、發明說明(3) 光精度。此配置也包括一定位環定位調整機構4。當有必 要時’該定位環定位調整機構4可用以調整定位環3和拋光 表面1 7之間的位置關係,以在基材s被壓至拋光表面1 7 時,在定位環3和拋光表面丨7間形成一間隙。當如上述執 行時’定位環3和拋光表面丨7間將不會有實體接觸而可增 加拋光速度(拋光速率),從而改進拋光生產能力。 另外,根據本發明的第二態樣,第一態樣的拋光裝置 1將增加兩個感測器(丨8和1 9 )用以感測由拋光工具丨5所拋 光之基材S的抛光量。此方式將使該裝置可反覆轉換於兩 板式之間’分別是定位環3以定位環施壓機構丨6壓至拋光 表面1 7之抛光模式,以及定位環3與拋光表面丨7互不接觸 之抛光模式’並以感測器(18和19)所感測之已執行拋光量 為基礎進行適當的拋光。 另外’根據本發明的第三態樣,用以完成上述目的拋 ^ ^ 如第1圖與第2圖所示例子,係包括一第一步驟: 二繞在基材載具1〇的定位環3以保持基材3於其上;第 ^二門·當調整定位環3和拋光表面丨7間的位置關係以形 其材間時,使基材5與拋光表面17相接觸,並在 ”驟上表'17間產生-相對運動以執行拋光;-第 光表面接觸拋光表面17時,使基材3與拋 運動以進=: 材8和抛光表面17間產生-相對 三態樣2第-根丰據本發明第四態樣的一抛光方上述第 ,、弟一步驟拋光表面17作為一固定拋光件15B:第313737.ptd Page 6 546185 V. Description of the invention (3) Light accuracy. This configuration also includes a positioning ring positioning adjustment mechanism 4. When necessary, the positioning ring positioning adjustment mechanism 4 can be used to adjust the positional relationship between the positioning ring 3 and the polishing surface 17 so that when the substrate s is pressed to the polishing surface 17, the positioning ring 3 and the polishing surface are adjusted. A gap is formed between 丨 7. When performed as described above, there will be no physical contact between the locating ring 3 and the polishing surface, and the polishing speed (polishing rate) can be increased, thereby improving polishing productivity. In addition, according to the second aspect of the present invention, the polishing device 1 of the first aspect will add two sensors (8 and 19) to sense the polishing of the substrate S polished by the polishing tool 5 the amount. This method will enable the device to be converted between the two plates over and over again. 'Positioning ring 3 is a polishing mode where the positioning ring pressing mechanism 6 is pressed to the polishing surface 17 and the positioning ring 3 and the polishing surface 7 are not in contact with each other. The polishing mode 'and perform appropriate polishing based on the performed polishing amount sensed by the sensors (18 and 19). In addition, according to the third aspect of the present invention, it is used to accomplish the above-mentioned purpose. The example shown in FIG. 1 and FIG. 2 includes a first step: two positioning rings wound around the substrate carrier 10 3 to keep the substrate 3 on it; the second door · When adjusting the positional relationship between the positioning ring 3 and the polishing surface 丨 7 to shape the material between them, the substrate 5 is in contact with the polishing surface 17 and The above table '17 generates-relative movement to perform polishing;-when the first light surface contacts the polishing surface 17, the substrate 3 and the polishing movement are advanced =: between the material 8 and the polishing surface 17-relative three states 2nd- According to a polishing method according to the fourth aspect of the present invention, the first step is to polish the surface 17 as a fixed polishing member 15B:

546185 五、發明說明(4) 三步驟中的拋光表面丨7則係為一拋光墊1 5 A。 此外’根據本發明第五態樣的一拋光方法則是在第三 或第四態樣的方法中至少有一第二或第三步驟包含有可測 量拋光量之第四步驟,且其中在拋光量達到一預先指定值 後,拋光方法將會由第四步驟回到第二和第三步驟繼續進 行。 【詳細說明】 本發明的最佳執行模式將參考圖示描述如下,而為達 該描述之目的,在相同或等效的元件項目出現於一個圖以 上時’在所有其出現之圖中我們均將賦予一相同號碼,且 對於該元件項目的描述將不再重覆。 第1圖係顯示本發明一實施例中的拋光裝置的外觀圖 。下面將參考第1圖描述此拋光裝置的配置。 拋光裝置1包括一基材載具10用以保持一基材S,一載 具驅動軸12用以驅動基材載具旋轉,一載具頭13用以支 撐載具驅動軸12以及一樞轉軸14。該樞轉軸14以自身軸心 作為運動中心而產生旋轉,從而使載具頭13和基材载具1〇 產生一類似旋轉。 μ 拋光裝置1也包括一拋光台36 --- 孩拋光台36具有一附546185 V. Description of the invention (4) The polishing surface in the three steps 7 is a polishing pad 1 5 A. In addition, a polishing method according to a fifth aspect of the present invention is that at least one of the second or third steps in the third or fourth aspect of the method includes a fourth step of measurable polishing amount, and wherein the polishing amount is After reaching a pre-specified value, the polishing method will continue from the fourth step to the second and third steps. [Detailed description] The best execution mode of the present invention will be described below with reference to the diagram. To achieve the purpose of the description, when the same or equivalent component items appear in more than one figure, we will An identical number will be assigned, and the description of the component item will not be repeated. FIG. 1 is an external view of a polishing apparatus according to an embodiment of the present invention. The configuration of this polishing apparatus will be described below with reference to FIG. The polishing device 1 includes a substrate carrier 10 for holding a substrate S, a carrier driving shaft 12 for driving the substrate carrier to rotate, a carrier head 13 for supporting the carrier driving shaft 12 and a pivot shaft. 14. The pivot shaft 14 rotates with its own axis as the movement center, so that the carrier head 13 and the substrate carrier 10 have a similar rotation. μ polishing device 1 also includes a polishing table 36 ---

加其上的拋光工具15;以及一旋轉運輸機27用以在一升 機2 9和一推板30 (該二者將於後再描述)之間運輸物件。 光工具15具有一拋光墊15 Α和一固定研磨件15Β。拋光二 具有一轉盤36Α,一附加其上的拋光墊15Α;以及一 36Β,一附加其上的固定研磨件15β。拋光工具15的拋光^A polishing tool 15 is added thereon; and a rotary conveyor 27 is used to transport objects between an elevator 29 and a push plate 30 (both will be described later). The light tool 15 has a polishing pad 15 A and a fixed abrasive member 15B. The polishing second has a turntable 36A, a polishing pad 15A attached thereto, and a 36B, a fixed abrasive member 15β attached thereto. Polishing of the polishing tool 15

546185 五、發明說明(5) 面17係由拋光墊15A的一拋光表面17A與固定研磨件15β的 一抛光表面所構成。 在拋光期間,純化水、一研磨料或一化學溶液(或者 上述這些的結合)可被供應至轉盤364與捲軸台36B而作為 一拋光溶液。藉由旋轉樞轉軸14,基材載具1〇可被直接定 位於轉盤36A、捲軸台36B或一推板3〇 (將於後面再描述) 之上。樞轉軸1 4具有一疋位機構(未顯示於圖中)以使基材 載具10可透過其被樞轉定位。 拋光裝置1也包括一基材反轉器28用以翻轉基材s; 一 升降機29用以運輸基材S於基材反轉器28和旋轉運輸機27 之間;一推板30用以接收由旋轉運輸機27所運送的基材s 並轉送該基材S至基材載具10; 一第一修整器2〇用以修飾 轉盤36A的拋光墊i5A;以及一第二修整器5〇用以 台36B的固定研磨件15B。 條神 請同時參考第2圖以瞭解基材載具1〇的描述。基材 具1—0具有一如圓柱容器狀的基材載具主體〗,其具有一内 :ΐ:Ξ:Γ及一定位環3係裝設於該基材載具主體2的 以形成一個別單元於其中。在由基材載具主體2 = 所圍起的密閉空間内,包括-與基材S頂部接 夾般f以保$衣样I’—一裱形保持環5 ’以及一近似圓環盤狀的 材Ϊ面SA ,料42。基材㈣下表面係為被拋光的基 保持ί 環42係由一彈性薄膜所構成,其外圍係被夹合於 '、、衣 夾盤6之間(並被扣合於保持環5的底部)而覆蓋、 313737.ptd 醜546185 V. Description of the invention (5) The surface 17 is composed of a polishing surface 17A of a polishing pad 15A and a polishing surface of a fixed abrasive member 15β. During polishing, purified water, an abrasive, or a chemical solution (or a combination of these) may be supplied to the turntable 364 and the reel table 36B as a polishing solution. By rotating the pivot shaft 14, the substrate carrier 10 can be positioned directly on the turntable 36A, the reel table 36B, or a push plate 30 (to be described later). The pivot shaft 14 has a positioning mechanism (not shown) so that the substrate carrier 10 can be pivotally positioned through it. The polishing device 1 also includes a substrate inverter 28 for inverting the substrate s; an elevator 29 for transporting the substrate S between the substrate inverter 28 and the rotary conveyor 27; a push plate 30 for receiving The substrate s carried by the conveyor 27 is rotated and transferred to the substrate carrier 10; a first dresser 20 is used to modify the polishing pad i5A of the turntable 36A; and a second dresser 50 is used to 36B fixed abrasive member 15B. Article God Please also refer to Figure 2 for the description of the substrate carrier 10. The substrate carrier 1-0 has a substrate carrier body that is shaped like a cylindrical container. It has an inner: ΐ: Ξ: Γ and a positioning ring 3 mounted on the substrate carrier body 2 to form a Individual units are in it. In the enclosed space surrounded by the substrate carrier body 2 =, it includes-a clip-on f to the top of the substrate S to keep clothes like I '-a frame-shaped retaining ring 5' and an approximately circular disk shape的 材 Ϊ 面 SA , 料 42。 Material surface SA, material 42. The lower surface of the base material is a polished base. The ring 42 is composed of an elastic film, and its periphery is sandwiched between the clothespin 6 and the bottom of the retaining ring 5. ) While covering, 313737.ptd ugly

第9頁 546185 五、發明說明(6) 於夹盤6的上表面外緣、外側部分和底表面的外緣。這將 在密封環4 2和失盤6之間形成一空間g。在拋光期間,該密 封環4 2緊密地黏附於基材s的上表面以密封該空間g。 由彈性薄膜所製成的一個壓力片7係被拉伸於保持環5 和基材載具主體2之間。壓力片7係藉其外側周圍邊緣部分 夾固於基材載具主體2的一外殼2人和一壓力片支承28之 間’而它的内側周圍邊緣部分係被夾固於保持環5的頂部 5A和制動器5B之間。該基材載具主體2、夾盤6、保持環$ 和壓力片7在基材載具主體2内結合而形成一壓力室21。 一流體路徑31,係由管路、連接器等等所組成,並盥 ,壓力=21相連通,該壓力室21係透過設置於流體路徑“ t 一调即閥R 1連接至一壓縮空氣供應器(未顯示)。 在基材s和夹盤6之間所形成的空間有一/ :崎9與基材S相接觸。中心袋8具有—圓形接觸表和 狀接:Ϊ I :,底表面的中心;而環形管9則具有-環 报&#杰般/ 外圍,並環繞其周圍。 形成於夾盤6和基材s間的空間係 分割成複數個空間。其,,一壓力室皮J心袋8和J衣形官9 和環形其Q之門,品两丄 I力至22係形成於中心袋8 ,幵/ g 9之間而壓力室23係形成於環外。 心袋8中,一中央壓力室(也轉锱A 长形& 9之外在中 薄膜8 1 ία 中、、代ϋ 曰 力室)2 4係由一彈性 溥暝81和一中〜袋保持器82所形成。 間壓力室(也簡稱為壓力室)25係由一二形官9中:: 形管保持器9 2所形成。 丨生/專膜 衣 流體路徑32、33、 和35刀別由警路、連接器等所組 313737.ptd 第10頁 546185 1、發明說明(7) 成,並與壓力室22和23、中央壓力室24和中間壓力室25相 連通。這些壓力室2 2、2 3、2 4和2 5係分別透過設置於流體 路徑32、33、34和35的調節閥R2、R3、R4和R5連接至一壓 端空氣供應器(未顯示)’如同一供應源。 此系統係設置使一流體(例如空氣)無論在加壓狀態或 是大氣壓力下均能供給位於壓力室21上方之夾盤6,並透 過上述流體路徑(3 1至3 5)同樣地供給與其相對應連通之壓 力室(22至25)。供給至每一壓力室(21至25)的加壓流體壓 力可藉由設置於流體路徑(31至35)中的調節閥(ri至R5)而 調整。因此,在每一壓力室(21至25)中的壓力均能被分別 地控制’或者可被設於大氣壓力下。利用調節閥(R 1至R 5 ) =使不同壓力室(2 1至25)的壓力可分別調整,將使基材s 壓至拋光墊1 5A進而使基材的每部份均可分別地被調整。 此外,壓力室22和23係配置成為可切換連接至一真空來源 (圖中未顯示),以使壓力室2 2和2 3切換至一真空狀雜。、 k 因為在密封環4 2的外側周圍表面和定位環3之間有一 ^小間隙Η,此表面配置構成一漂浮結構,其中一些零件 相彳如保持環5、夾盤6和安裝於夾盤6上的密封環42)係可 地基材載具主體2和定位環3而產生垂直移動。同樣 部5在=持環5的致動器5B的一些位置上係為複數個突出 垂直移周圍向外突出。而可移動零件(保持環5等)的 位環3之/限於一給定點,該點係為由此突出部%與定 位衣3之一部分3A上表面3B相咬合之特定點。 疋 調節閥R1至R5、流體路徑31至35、壓力室21至25及夹Page 9 546185 V. Description of the invention (6) The outer edge of the upper surface, the outer part and the bottom surface of the chuck 6. This will create a space g between the seal ring 42 and the missing plate 6. During polishing, the sealing ring 42 is closely adhered to the upper surface of the substrate s to seal the space g. A pressure piece 7 made of an elastic film is stretched between the retaining ring 5 and the substrate carrier body 2. The pressure piece 7 is sandwiched between a casing 2 of the substrate carrier body 2 and a pressure piece support 28 through its outer peripheral edge portion, and its inner peripheral edge portion is clamped on the top of the retaining ring 5 5A and brake 5B. The substrate carrier body 2, the chuck 6, the retaining ring $ and the pressure sheet 7 are combined in the substrate carrier body 2 to form a pressure chamber 21. A fluid path 31 is composed of pipes, connectors, etc., and communicates with pressure = 21. The pressure chamber 21 is connected to a compressed air supply through a valve R 1 provided in the fluid path (Not shown). The space formed between the substrate s and the chuck 6 has a /:: 9 in contact with the substrate S. The center bag 8 has a round contact surface and a connection: Ϊ I :, bottom The center of the surface; and the annular tube 9 has a ring-shaped outer circle and surrounds it. The space formed between the chuck 6 and the substrate s is divided into a plurality of spaces. Among them, a pressure The ventricular J-heart bag 8 and J-shaped official 9 and the ring-shaped Q door, the two pairs of force I to 22 are formed between the center bag 8 and 幵 / g 9 and the pressure chamber 23 is formed outside the ring. In the bag 8, a central pressure chamber (also turned into A long & 9 outside in the middle film 8 1 ία ,, and ϋ on behalf of the force chamber) 2 4 is held by an elastic 溥 暝 81 and a medium ~ bag The pressure chamber (also simply referred to as the pressure chamber) 25 is formed by the one-and-two-shaped tube 9 :: shaped tube holder 92 2. The fluid path 32, 33, and 35 knife 313737.ptd by police road, connector, etc. Page 10 546185 1. Description of invention (7), and communicate with pressure chambers 22 and 23, central pressure chamber 24 and intermediate pressure chamber 25. These pressure chambers 2 2 , 2 3, 2 4 and 2 5 are connected to a pressure-side air supply (not shown) through regulating valves R2, R3, R4, and R5 provided in the fluid paths 32, 33, 34, and 35, respectively. This system is set up so that a fluid (such as air) can be supplied to the chuck 6 located above the pressure chamber 21 in a pressurized state or atmospheric pressure, and is similarly supplied through the fluid path (31 to 35). The corresponding pressure chambers (22 to 25) communicate with each other. The pressure of the pressurized fluid supplied to each of the pressure chambers (21 to 25) can be adjusted by a regulating valve (ri to R5) provided in the fluid path (31 to 35). And adjustment. Therefore, the pressure in each pressure chamber (21 to 25) can be controlled separately or can be set at atmospheric pressure. Use the regulating valve (R 1 to R 5) = make different pressure chambers ( 2 1 to 25) The pressure can be adjusted separately, so that the substrate s is pressed to the polishing pad 1 5A so that each part of the substrate is uniform. Can be adjusted separately. In addition, the pressure chambers 22 and 23 are configured to be switchably connected to a vacuum source (not shown in the figure), so that the pressure chambers 2 2 and 23 are switched to a vacuum. There is a small gap between the outer peripheral surface of the sealing ring 4 2 and the positioning ring 3. This surface configuration constitutes a floating structure, some of which are similar to the retaining ring 5, the chuck 6, and the seal installed on the chuck 6. The ring 42) is a vertical movement of the base material carrier main body 2 and the positioning ring 3. Similarly, the part 5 is a plurality of protrusions at some positions of the actuator 5B of the holding ring 5. The protrusions are vertically moved around and protrude outward. The position of the movable ring (retaining ring 5 and the like) of the ring 3 is limited to a given point, which is a specific point where the protruding portion% engages with the upper surface 3B of a portion 3A of the positioning garment 3.疋 Regulators R1 to R5, fluid paths 31 to 35, pressure chambers 21 to 25, and clamps

546185 五、發明說明(8) 盤6為基材施壓機構1 1的所有部分。 其次’用以旋轉與上下移動基材載具10的機構將於下 文中描述。基材載具1 0係透過一萬向球鉸機構5 2連接至一 女裝於基材載具驅動軸12底端的負載電池51。 基材載具驅動軸1 2係垂直地定位於該裝置中,並被插 入一齒條軸承53中然後再依序插入一滑輪54中。滑輪54係 以可旋轉的方式設置於一支撐單元56的内部孔洞5βΑ中。 垂直^向設置的基材載具驅動軸12係通過水平方向設置的 =撐單tg56。驅動裝置(未顯示在圖中)透過圍繞在滑輪54 、一帶55 (在圖中以虛線表示)驅動基材載具驅動軸 俜,係運轉於内部孔洞56A内。-脈衝馬達57 ^置於支撑早元56上方,並結合 滾珠螺桿58係螺栓於一滾珐艘炉崎枰Μ的禾鈿 合基材都呈酿如仏,、〇 朱累中目5 9中,而滾珠螺帽5 9係結 材載驅動軸1 2的頂端。囡屮,、悉、R ^,基姑# JLMi b # 因此,透過操作脈衝馬達 材載八10和與其相連接的美姑都 作同一單元且可上井式下收、土材載/、驅動軸12可被視 馬達或伺服5達& γ ^ i +,並在所需之高度停止。步進 二/ =馬達均可用來作為脈衝馬達57。 而注意的是,儘管第2圖 元56之上與包含立矜罝分以顯不(見弟1圖),在支撐單 負恭2樣 基材載具驅動轴12向下延伸$ 之 、載電池51和部分兹至支撐單元56、 氣阻擔物叫6;:::叙== 測器機構18,捲轴i 36B:;測;機構係為-第-終點感 捲轴D36B上的一感測器機構則係一第二終 313737.ptd 第12頁 546185 五、發明說明(9) — :^ : 機構1 9。第一和第二終點感測器機構1 8和1 9偵測 二ίΪ=Ϊ是否已進行至—指定值(終點),並在此對 二制機制(未顯示)輸出一偵測信號。用於第一和第二終 ^怎' ^機構i 8和1 9的感測器可為光學式或超載電流 # to 式感測器。如果使用一種用以感測拋光扭 矩光扭矩感測器(未於圖中顯示)於拋光裝置丨中,並 U ί 2之拋光扭矩值決定拋光量,則將不需提供終點 感測mi機構於此。 &其馬達57、滾珠螺桿58、滾珠螺帽59、貞載電池51 ^ 八驅動軸1 2均包括於定位環定位調整機構4之内 發同樣地,脈衝馬達57、滾珠螺桿58、滾珠螺帽Μ、負載 ’池5 1與基材載具驅動軸1 2也均包括於定位環施壓機構 在本發明的一實施例中拋光裝置i的基材載具1〇之 作將描述於第2圖中,並且參考第丨圖與第3圖。在本實施 例的拋光裝置1中,為了獲得和定位基材載具1〇中的基材 S,貫先得把整個基材載具10直接定位於基材3上方。然 後對中心袋8和壓力室24和25(在環形管9裡面)供給一加壓 流體’使其加壓至指定的壓力。然&,將一脈衝信號從— 控制機制(未顯示)傳送至脈衝馬達57,以降低基材載具 1 0。在對該脈衝信號的回應中,脈衝馬達5 7轉動滾珠螺桿 58以驅動至滾珠螺帽59,造成基材載具驅動軸12下降,因 而降低基材载具10直到中心袋8的底部表面和環狀管9對所 保持的基材S產生^一緊密密封。546185 V. Description of the invention (8) The disc 6 is all parts of the substrate pressure mechanism 11. Next, the mechanism for rotating and moving the substrate carrier 10 will be described later. The substrate carrier 10 is connected to a load battery 51 at the bottom end of the substrate carrier driving shaft 12 through a universal joint ball mechanism 5 2. The substrate carrier driving shaft 12 is vertically positioned in the device, and is inserted into a rack bearing 53 and then sequentially inserted into a pulley 54. The pulley 54 is rotatably disposed in an inner hole 5βA of a supporting unit 56. The vertical direction of the substrate carrier driving shaft 12 is set to support the single tg56 in the horizontal direction. The driving device (not shown in the figure) drives the substrate carrier driving shaft 透过 through a belt 54 and a belt 55 (indicated by a dotted line in the figure), and operates in the internal hole 56A. -Pulse motor 57 ^ is placed above the supporting early element 56 and combined with the ball screw 58 series bolts on a roll of enamel ship Furuzaki 的 The composite substrates are as good as 仏, 〇 Chuleizhongmu 5 9 The ball nut 5 9 is the top end of the drive shaft 1 2.囡 屮 ,, 知 , R ^ , 基 姑 # JLMi b # Therefore, by operating the pulse motor, the material load 8-10 and the connected beauty are all made into the same unit and can be retracted in the well type, the material load /, and the drive shaft. 12 can be viewed as motor or servo 5 up to γ ^ i + and stop at the desired height. Both stepper / = motors can be used as the pulse motor 57. It should be noted that, although the second image element 56 is not visible with the inclusion of a standpoint (see figure 1), the support shaft 12 of the substrate carrier 2 extends downward, and The battery 51 and some parts are connected to the support unit 56, and the air-resistance load is called 6; :::: == measuring device mechanism 18, reel i 36B :; measuring; the mechanism is a- The sensor mechanism is a second terminal 313737.ptd Page 12 546185 V. Description of the invention (9) —: ^: Institution 19. The first and second end-point sensor mechanisms 18 and 19 detect whether or not Ϊ = Ϊ has been reached to the specified value (end point), and outputs a detection signal to the two-system mechanism (not shown) here. The sensors used for the first and second terminals ^ mechanisms i 8 and 19 may be optical or overload current # to type sensors. If an optical torque sensor (not shown in the figure) is used in the polishing device to sense the polishing torque, and the polishing torque value of U 2 is used to determine the polishing amount, it is not necessary to provide an end point sensing mechanism. this. & its motor 57, ball screw 58, ball nut 59, chrysanthemum battery 51 ^ eight drive shafts 12 are included in the positioning ring positioning adjustment mechanism 4 Similarly, the pulse motor 57, ball screw 58, ball screw The cap M, the load 'pool 51, and the substrate carrier driving shaft 12 are also included in the positioning ring pressing mechanism. In one embodiment of the present invention, the operation of the substrate carrier 10 of the polishing device i will be described in the first paragraph. Fig. 2 and refer to Fig. 丨 and Fig. 3. In the polishing apparatus 1 of this embodiment, in order to obtain and position the substrate S in the substrate carrier 10, the entire substrate carrier 10 must first be positioned directly above the substrate 3. Then, the center bag 8 and the pressure chambers 24 and 25 (in the annular pipe 9) are supplied with a pressurized fluid 'to pressurize it to a prescribed pressure. Then, a pulse signal is transmitted from the control mechanism (not shown) to the pulse motor 57 to lower the substrate carrier 10. In response to this pulse signal, the pulse motor 57 turns the ball screw 58 to drive to the ball nut 59, causing the substrate carrier driving shaft 12 to descend, thereby lowering the substrate carrier 10 until the bottom surface of the center bag 8 and The ring-shaped tube 9 creates a tight seal on the held substrate S.

3l3737.ptd 第13頁 546185 五 、發明說明(ίο) 其次,壓力室2 2和2 3係透過流體路徑3 2和3 3分別連接 至—真空來源(未顯示)以在壓力室22和23中產生負壓力, 並藉吸附黏著以產生保持基材s所需的吸力。然後,控制 機制(未顯示於圖中)將一脈衝信號傳遞至脈衝馬達5 7,以 升起基材載具10和藉吸力而被快速保持於其上的基材S。 |脈衝馬達5 7以類似上述的操作方式(透過滾珠螺桿5 8、滾 珠螺帽5 9和基材載具驅動軸1 2 )進行下降,但以相反的方 向轉動。其次,樞轉軸丨4係轉動以移動整個基材載具1〇而 定位於所要求之轉盤36A和其拋光墊15A之上方。同樣地, 基材S的周圍係由定位環3所固定,以防止它在拋光期間從 基材載具1 0上移位。 接著’基材載具1〇被下降以使被拋光的基材S表面和 定位環3的底表面與拋光墊15A相接觸。當基材S與和定位 環3與拋光表面1 7 A相接觸時,將一負載施加於裝設在基材 載具驅動軸1 2底端的負載電池5 1上。負載電池5 i感測該負 載並將一 ’負載感測’信號傳送到控制機制(未顯示),此時 控制機制將確認基材S和定位環3已與拋光墊1 5A相接觸。 然後’控制機制把脈衝信號送到脈衝馬達5 7以使脈衝 馬達轉動而抬升基材載具1 〇至指定位置。如此則無論定位 環3是否磨損’皆可維持拋光墊1 5 A和定位環3於相同的位 置。更具體而言,當基材載具10抬升至大約〇. 2毫米高 時,由於基材S的厚度大約為〇 · 8毫米,因此在拋光期間基 材將不會離開基材載具1 〇的底部。 在此狀態的設備中,對壓力室2 1至2 3供給具有一指定 麵3l3737.ptd Page 13 546185 V. Description of the invention (ίο) Secondly, the pressure chambers 2 2 and 2 3 are connected to the vacuum source (not shown) through the fluid path 3 2 and 3 3 respectively in the pressure chambers 22 and 23 Negative pressure is generated and adhered by adsorption to generate the suction required to hold the substrate s. Then, a control mechanism (not shown in the figure) transmits a pulse signal to the pulse motor 57 to raise the substrate carrier 10 and the substrate S which is quickly held thereon by suction. The pulse motor 57 is lowered in a similar manner to that described above (through the ball screw 58, the ball nut 59, and the substrate carrier drive shaft 12), but rotates in the opposite direction. Secondly, the pivot axis 4 is rotated to move the entire substrate carrier 10 and positioned above the required turntable 36A and its polishing pad 15A. Similarly, the periphery of the substrate S is fixed by the positioning ring 3 to prevent it from being displaced from the substrate carrier 10 during polishing. Next, the 'substrate carrier 10 is lowered so that the surface of the substrate S to be polished and the bottom surface of the positioning ring 3 are brought into contact with the polishing pad 15A. When the substrate S is in contact with the positioning ring 3 and the polishing surface 17 A, a load is applied to a load battery 51 which is mounted on the bottom end of the substrate carrier drive shaft 12. The load battery 5i senses the load and transmits a 'load sensing' signal to a control mechanism (not shown). At this time, the control mechanism confirms that the substrate S and the positioning ring 3 are in contact with the polishing pad 15A. The control mechanism then sends a pulse signal to the pulse motor 57 to rotate the pulse motor to lift the substrate carrier 10 to a specified position. In this way, the polishing pad 15 A and the positioning ring 3 can be maintained at the same position regardless of whether the positioning ring 3 is worn or not '. More specifically, when the substrate carrier 10 is lifted to a height of about 0.2 mm, since the thickness of the substrate S is about 0.8 mm, the substrate will not leave the substrate carrier 1 during polishing. bottom of. In the device in this state, the supply to the pressure chambers 2 1 to 2 3 has a specified surface.

I麵I side

313737.ptd 第14頁 546185 五、發明說明(π) 壓力的加壓流體,以壓迫基材S至轉盤36A上的拋光表面 1 7A。使拋光溶液流自一拋光溶液供應喷嘴(未顯示)而保 持拋光墊1 5 A上有足夠量的拋光溶液,以確保拋光總能伴 隨著拋光溶液一起執行,其中該拋光溶液係在需被拋光的 基材表面SA和拋光墊15A的拋光表面17A之間。 在此期間(見第3圖),藉由供給壓力室2 2和2 3的流體 壓力,基材S的C2部分和C4部分(放置於壓力室22和23下 方)係分別被下壓至抛光表面1 7 A,。同樣地,位於中央壓 力室24之基材S的C1部分,係藉加壓流體壓力壓至拋光墊 1 5 A上,此係透過中心袋8的彈性薄膜8 1而作用在中央壓力 室24上。設置於中間壓力室25下方基材S的C3部分則透過 環形管9的彈性薄膜9 1,藉加壓流體壓力施加於中間壓力 室25並下壓至拋光表面17A。另外,用以使基材s壓至拋光 表面1 7 A的力量可藉由對壓力室2 1供給加壓流體,或改變 加壓流體的壓力而加以改變。 因此’施加於基材S的拋光壓力可藉由控制施加於每 一壓力室21至25的加壓流體壓力來作調整。換言之,用以 使基材S壓住轉盤3 6 A上之拋光塾1 5 A的力量係可分別針對 基材S的每一單獨C1至C4部分而作調整。上述功能係藉由 分別调整設置於流體路徑3 1至3 5中的調節閥R1至r 5,從而 調整施加於此個別壓力室2 1至2 5的加壓流體壓力。 以此模式’基材S的每一 c 1至C 4部分皆可藉施加一可 個別調整至所需值的拋光壓力,以將其下壓至轉動轉盤 3 6A中的拋光墊15A。藉由適當地調整壓下基材s至拋光墊313737.ptd Page 14 546185 V. Description of the invention (π) Pressurized fluid under pressure to press the substrate S to the polished surface 17A on the turntable 36A. The polishing solution is caused to flow from a polishing solution supply nozzle (not shown) while maintaining a sufficient amount of polishing solution on the polishing pad 15 A to ensure that polishing can always be performed with the polishing solution, where the polishing solution is to be polished. Between the substrate surface SA and the polishing surface 17A of the polishing pad 15A. During this period (see Figure 3), by supplying the fluid pressure in the pressure chambers 22 and 23, the C2 and C4 parts of the substrate S (placed under the pressure chambers 22 and 23) are respectively pressed down to polishing Surface 1 7 A ,. Similarly, the part C1 of the substrate S located in the central pressure chamber 24 is pressed against the polishing pad 15 A by a pressurized fluid, and this acts on the central pressure chamber 24 through the elastic film 81 of the central bag 8 . The C3 portion of the substrate S provided below the intermediate pressure chamber 25 passes through the elastic film 9 1 of the annular tube 9 and is applied to the intermediate pressure chamber 25 by the pressure of the pressurized fluid and pressed down to the polished surface 17A. In addition, the force for pressing the substrate s to the polishing surface 17 A can be changed by supplying a pressurized fluid to the pressure chamber 21 or changing the pressure of the pressurized fluid. Therefore, the polishing pressure applied to the substrate S can be adjusted by controlling the pressure of the pressurized fluid applied to each of the pressure chambers 21 to 25. In other words, the force for pressing the substrate S against the polishing pad 15 A on the turntable 3 6 A can be adjusted for each individual C1 to C4 portion of the substrate S, respectively. The above functions adjust the pressures of the pressurized fluids applied to the individual pressure chambers 21 to 25 by adjusting the regulating valves R1 to r5 provided in the fluid paths 31 to 35, respectively. In this mode, each of the c 1 to C 4 portions of the substrate S can be pressed down to the polishing pad 15A in the rotary dial 36A by applying a polishing pressure that can be individually adjusted to a desired value. By properly adjusting the substrate s to the polishing pad

313737.ptd 第15頁 546185 五、發明說明(12) 15A的壓力’在基材s表面各部分(C1部分,設置於中央壓 力室24下方,C2部分,設置於壓力室22下方;C3部分,設 置於中間壓力室25下方;和C4部分,設置於壓力室22下 方)的壓力分布將可視需要調整。 因此’可將基材S分成四個同心圓(圓形部分c 1和環狀 部分C2至C4)’並且可利用一單獨界定的壓力下壓每一個 別的C 1至C 4部分。由於拋光速率係取決於用以使基材s壓 至拋光墊15A的壓力,且因為施加於基材s每一(^至以部分 的壓力可如上述般被調整,因此(^至以的4個不同部分之 拋光速率也將可獨立予以控制。此種方式將使基材S的整 個表面沒有抛光不足(under —p〇lishing)或過度拋光 (over-pol ishing)之問題,以獲得均勻拋光,即使將被拋 光的基材S表面之薄膜係具有徑向薄膜厚度分布時亦然。 基材S也可在定位環3未與拋光表面ι7Α相接觸的模式 下進行拋光。與定位環3與拋光表面17A相接觸的模式相比 較’這將使更多的拋光溶液進入將被拋光之基材S的基材 表面SA與抛光表面17A,從而增加抛光速率。除了可增加 拋光速率以外’若在拋光期間定位環3未與拋光表面17八相 接觸將也可減少疋位環3的磨損而有效增加定位環3的使用 壽命,。 為了執行在定位環3與拋光墊1^相接觸下的拋光,在 基材載具10已被降低至足夠使基材3與定位環3及拋光墊 1 5 A相接觸後,下述操作將接著執行:脈衝信號將從控制 器(未顯不)傳送至脈衝馬達5 7,以造成脈衝馬達5 7轉動滾313737.ptd Page 15 546185 V. Description of the invention (12) The pressure of 15A is on the surface of the substrate s (C1, located below the central pressure chamber 24, C2, located below the pressure chamber 22; C3, It is arranged below the intermediate pressure chamber 25; and part C4, it is arranged under the pressure chamber 22), the pressure distribution will be adjusted as needed. Thus, 'the substrate S can be divided into four concentric circles (circular portion c 1 and ring portions C2 to C4)' and each of the other C 1 to C 4 portions can be pressed with a separately defined pressure. Since the polishing rate depends on the pressure used to press the substrate s to the polishing pad 15A, and because each of the pressure applied to the substrate s can be adjusted as described above, therefore (^ to 4 The polishing rate of the different parts can also be controlled independently. In this way, the entire surface of the substrate S will be free from under-polishing or over-pol ishing problems to obtain uniform polishing. , Even when the film on the surface of the substrate S to be polished has a radial film thickness distribution. The substrate S can also be polished in a mode where the positioning ring 3 is not in contact with the polishing surface ι7Α. With the positioning ring 3 and The mode of contact of the polishing surface 17A is compared with 'this will allow more polishing solution to enter the substrate surface SA and the polishing surface 17A of the substrate S to be polished, thereby increasing the polishing rate. In addition to increasing the polishing rate' The non-contact of the positioning ring 3 with the polishing surface 17 during polishing will also reduce the wear of the positioning ring 3 and effectively increase the service life of the positioning ring 3. In order to perform polishing when the positioning ring 3 is in contact with the polishing pad 1 ^ , After the substrate carrier 10 has been lowered enough to bring the substrate 3 into contact with the positioning ring 3 and the polishing pad 1 5 A, the following operation will be performed: a pulse signal will be transmitted from the controller (not shown) to the pulse motor 5 7 to cause the pulse motor 5 7 to roll

313737.ptd 第16頁 546185 五、發明說明(13) 珠螺桿58,該滾珠螺桿58係與滾珠螺帽59和基材載具驅 動軸12相配合運轉以進一步降低基材載具1〇,並利用一增 加力ϊ使定位環3壓住拋光墊1 5 A,直到負載電池5丨偵測到 預設拋光程序中設定之定位環壓力的負載值。 拋光屢力係利用回饋控制而控制。因此,當定位環3 被壓至拋光塾1 5 A時將施加一負載於負載電池5 ^,而當負 載達到一指定值時,一負載信號便由負載電池5 i傳送至控 制機制’以停止脈衝馬達5 7的旋轉。然後,如同上述,藉 由加壓壓力室21至23以使基材S壓至拋光墊15A;且如有需 要’可改變在中央和中間壓力室24和25的壓力;並使轉盤 3 6 A轉動以執行抛光操作。 备上述步驟均完成時,拋光墊之”邊緣圓化”問題將在 使用如ici i〇〇〇/SUBA4〇〇i拋光布料作為拋光墊ι5Α時發 生’此問題將可藉由控制定位環的壓力而解決。它同樣也 改善了在基材s表面的均勻性並增進了生產力。 、接$ ’參考圖示,本實施例的拋光裝置1之操作將描 述利^疋位% 3與拋光表面丨7相接觸所進行的拋光過程, 以及,位% 3與拋光表面丨7不互相接觸的另一拋光過程。 就此操作而言,在轉盤36A和捲軸台36B所使用的拋光工. 15將會在下文中被描述。 抛光程序(1 )將參考第2圖來描述,同時適時地參考 5圖與第4A圖。^ L 、_ 在延個程序中,一金屬薄膜6 1將先被拋 光,者,金屬薄膜6 1的剩餘部分和金屬薄膜6 2將被同! 拋光。313737.ptd Page 16 546185 V. Description of the invention (13) Ball screw 58. The ball screw 58 operates in conjunction with the ball nut 59 and the substrate carrier drive shaft 12 to further reduce the substrate carrier 10, and With an increasing force, the positioning ring 3 is pressed against the polishing pad 15 A until the load battery 5 detects the load value of the positioning ring pressure set in the preset polishing program. Polishing force is controlled by feedback control. Therefore, when the positioning ring 3 is pressed to the polishing 塾 1 5 A, a load is applied to the load battery 5 ^, and when the load reaches a specified value, a load signal is transmitted from the load battery 5 i to the control mechanism 'to stop Rotation of the pulse motor 57. Then, as described above, the substrate S is pressed to the polishing pad 15A by pressing the pressure chambers 21 to 23; and if necessary, the pressure in the central and intermediate pressure chambers 24 and 25 can be changed; and the turntable 3 6 A Turn to perform the polishing operation. When all the above steps are completed, the "edge rounding" problem of the polishing pad will occur when using polishing cloth such as ici 〇〇〇 / SUBA4〇〇i as the polishing pad ι5A. This problem can be controlled by the pressure of the positioning ring And resolved. It also improves the uniformity on the surface of the substrate and increases productivity. With reference to the figure, the operation of the polishing device 1 of this embodiment will describe the polishing process performed when the position% 3 is in contact with the polishing surface 丨 7, and the position% 3 is not in contact with the polishing surface 丨 7 Contact with another polishing process. In this regard, the polisher used in the turntable 36A and the reel table 36B. 15 will be described later. The polishing procedure (1) will be described with reference to FIG. 2, and at the same time, refer to FIG. 5 and FIG. 4A. ^ L, _ In this process, a metal film 6 1 will be polished first, or the remaining part of the metal film 61 and the metal film 6 2 will be polished together!

546185 五、發明說明(14) 此時,如第5圖所示,使用於轉盤36A上的一拋光墊 15A’與第1圖所示相同,但在捲軸台36B上係使用一抛光 墊115A(而不是使用一固定拋光件15B)作為拋光工具。該 拋光塾115A係有一拋光表面117A。 一基材S1的橫戴面係顯示於第4(A)圖中,具有一金屬 薄膜6 1 (銅金屬等),係由例如電鑛的一過程所形成,以 及一金屬薄膜6 2係形成以作為金屬薄膜6 1下的一阻擋層。 金屬薄膜61的拋光僅執行至圖示中標示為义丨的高度;然 後’從X 1高度到Y 1高度金屬薄膜6丨和金屬薄膜6 2的拋光則 將同時進行。 首先,基材載具頭1 3係以樞轉軸1 4為中心旋轉,以將 基材載具10定位於推板30的上方。其次,對壓力室24和25 加壓’並且升起推板3 〇直到將被拋光的基材s 1接觸到基材 載具1 0的底部(密封環4 2與彈性薄膜8 1和8 2 )。然後,會在 壓力室2 2和2 3得到一負壓力以產生吸附力並使基材s 1吸附 於基材搬運機10。此時,被保持於基材載具1〇的基材81將 被定位環3所圍繞。 接著’將基材載具1 〇直接定位於轉盤36A上方,然後 轉動脈衝馬達5 7軸以降低基材載具1 〇而使定位環3與轉盤 36A上的拋光墊15A相接觸,並將基材S1壓至拋光墊15A。 在基材載具1 0接觸拋光墊1 5 A之後,倒轉脈衝馬達5 7以輕 微地抬升基材載具1 〇 (例如0 · 2毫米),從而將定位環3定 位於抛光墊15A上方,以在定位環3的底部和拋光墊i5A的 抛光表面1 7 A間形成一預定尺寸的間隙。546185 V. Description of the invention (14) At this time, as shown in FIG. 5, a polishing pad 15A 'used on the turntable 36A is the same as that shown in FIG. 1, but a polishing pad 115A is used on the reel table 36B ( Instead of using a fixed polishing member 15B) as a polishing tool. The polishing pad 115A has a polishing surface 117A. A cross-section of a substrate S1 is shown in FIG. 4 (A), and has a metal thin film 6 1 (copper metal, etc.) formed by a process such as electricity ore and a metal thin film 62. As a barrier layer under the metal thin film 61. The polishing of the metal thin film 61 is performed only to the height indicated by the meaning in the illustration; then, the polishing of the metal thin film 6 and the metal thin film 6 from the height X1 to the height Y1 will be performed simultaneously. First, the substrate carrier head 13 is rotated around the pivot axis 14 as a center to position the substrate carrier 10 above the push plate 30. Next, pressurize the pressure chambers 24 and 25 ′ and raise the push plate 30 until the polished substrate s 1 contacts the bottom of the substrate carrier 10 (the seal ring 4 2 and the elastic film 8 1 and 8 2 ). Then, a negative pressure is obtained in the pressure chambers 22 and 23 to generate an adsorption force and cause the substrate s 1 to be adsorbed on the substrate carrier 10. At this time, the base material 81 held by the base material carrier 10 is surrounded by the positioning ring 3. Next, 'position the substrate carrier 10 directly above the turntable 36A, and then rotate the pulse motor 57 axis to lower the substrate carrier 10 and bring the positioning ring 3 into contact with the polishing pad 15A on the turntable 36A, and place the substrate The material S1 is pressed to the polishing pad 15A. After the substrate carrier 10 contacts the polishing pad 15 A, the pulse motor 57 is inverted to slightly raise the substrate carrier 10 (for example, 0.2 mm), thereby positioning the positioning ring 3 above the polishing pad 15A. A predetermined size gap is formed between the bottom of the positioning ring 3 and the polishing surface 17 A of the polishing pad i5A.

313737.ptd 第18頁 546185 五、發明說明(15) 接著,使壓力室21至23加壓,壓下基材S1至拋光墊 15A;轉盤36A係被轉動而造成基材Si和拋光表面17A之間 的相對運動;以使金屬薄膜6 1被拋光。此項技術(即拋光 時定位環3與拋光表面17A未接觸)可改進在基材S1的被拋 光基材表面SA1與拋光表面17A之間的拋光溶液進入,而將 增加拋光速率。另外,因為此項技術也會減少定位環3的 磨損’將可大大地增加定位環3的使用壽命。 當該設備已執行一指定量的拋光,而第一終點感測機 構1 8偵測被拋光基材表面SA丨已經到達χ丨高度時,即停止 轉盤3 6Α的旋轉。接著,使壓力室21接受大氣壓力,並使 壓力室22和23接受負壓力,從而產生吸附力以使基材“黏 附於基材載具10上。脈衝馬達57則開始運轉以抬升基材 具10,完成轉盤36Α上的拋光過程。 然後,基材載具頭13係以樞轉軸14為中心旋以 基材載具10直接定位於捲軸台36Β上方。此、 被降低’壓力室21至23被加壓’且被拋 材载面、 被壓至拋光墊U5A。而開始拋光。在基材载具 5Α相接觸以後。將不需抬升基材载具1 〇,而脱、鬲 5 7緩慢轉動以使基材載具丨〇略微降低,吏脈衝馬達 拋光墊115Α’以拋光金屬薄膜61和金屬:膜&立,3壓住 土執行拋光時’拋光墊115八將+會有 圓=此模 將使被拋光基材表面SA1的邊緣獲 ^匕問喊。运 平坦度。 光,從而增加 當預定量的拋光被執行後,換 田弟一終點感測 313737.ptd 第19頁 546185313737.ptd Page 18 546185 V. Description of the invention (15) Next, pressurize the pressure chambers 21 to 23 to press the substrate S1 to the polishing pad 15A; the turntable 36A is rotated to cause the substrate Si and the polishing surface 17A. Relative motion; so that the metal film 61 is polished. This technique (that is, the positioning ring 3 is not in contact with the polishing surface 17A during polishing) can improve the entry of the polishing solution between the polished substrate surface SA1 and the polishing surface 17A of the substrate S1, and will increase the polishing rate. In addition, because this technology will also reduce the wear of the positioning ring 3, the service life of the positioning ring 3 can be greatly increased. When the device has performed a specified amount of polishing, and the first end point sensing mechanism 18 detects that the surface SA 丨 of the polished substrate has reached the height of χ 丨, the rotation of the turntable 36A is stopped. Next, the pressure chamber 21 is subjected to atmospheric pressure, and the pressure chambers 22 and 23 are subjected to negative pressure, thereby generating an adsorption force to make the substrate "adhere to the substrate carrier 10. The pulse motor 57 starts to operate to lift the substrate tool 10. Finish the polishing process on the turntable 36A. Then, the substrate carrier head 13 is rotated around the pivot axis 14 and the substrate carrier 10 is positioned directly above the reel table 36B. This reduces the pressure chambers 21 to 23 It is pressurized, and is thrown on the surface of the material, and is pressed to the polishing pad U5A. The polishing is started. After the substrate carrier 5A is in contact with it, the substrate carrier 10 does not need to be lifted. Rotate to lower the substrate carrier slightly, pulse motor polishing pad 115A 'to polish metal film 61 and metal: film & stand, 3 while pressing the soil to perform polishing' Polishing pad 115 eight will + will have a circle = This mold will make the edge of the surface SA1 of the substrate to be polished. Flatness. Light, thereby increasing when a predetermined amount of polishing is performed, change the end point of Tiandi 313737.ptd Page 19 546185

裔機制1 9感測到被拋光基材表面s A 1到達Υ 1高度時,便停 止抛光。 然後,使壓力室2 1接收大氣壓力且壓力室2 2和2 3則接 收負壓力,從而產生吸附力以保持基材s丨於基材載具i 〇 上。接著,基材載具10被抬升,並結束在捲軸台36B上的 抛光過程。其次’將基材載具1〇直接定位於推板3〇的上 方,而推板3 0則被抬升至基材的傳送位置,使壓力室2 2和 23回復至大氣壓力,以使基材載具1〇釋放基材“並將其傳 送至推板3 0。 上述的拋光程序(1)係描述一被拋光部分包含金屬薄 膜61和金屬薄膜62的基材S1拋光過程。然而,於被拋光部 分只具金屬薄膜6 1的基材拋光(顯示於第4β圖中)係可先被 抛光至X 2高度,然後再拋光至γ 2高度,接著兩部分再繼續 執行同樣的拋光程序(1 )。在此情況下,在χ2高度之前該、 部分的拋光速率將可增加以改進生產力;並可在χ2* 丫2高 度之間執行拋光以獲得最佳合適的表面平坦度。 利用一單一拋光台36以拋光金屬薄膜βΐ的拋光程序 (2)將被描述於第2圖中,並可同時參考第4(b)圖。此實施 例利用顯示於第2圖中的轉盤36Α,並將拋光墊1 5Α設置於 轉盤36Α上(第2圖)。顯示於第4(B)圖的基材S2係為將被 拋光的基材。 下面的說明將僅描述拋光程序(2)不同於拋光程序Q) 的部分:提高至X 2高度,基材s 2的拋光係利用定位環3下 的一間隙,而基材載具1 〇則被提升至此處。然後,基材載When the mechanism 19 detects that the surface of the substrate to be polished s A 1 reaches the height of Υ 1, the polishing is stopped. Then, the pressure chamber 21 is made to receive the atmospheric pressure and the pressure chambers 22 and 23 are made to receive the negative pressure, thereby generating an adsorption force to keep the substrate s 丨 on the substrate carrier i 0. Next, the substrate carrier 10 is lifted, and the polishing process on the reel table 36B is ended. Secondly, 'position the substrate carrier 10 directly above the push plate 30, and the push plate 30 is lifted to the transfer position of the substrate, and the pressure chambers 22 and 23 are returned to atmospheric pressure to make the substrate The carrier 10 releases the substrate "and transfers it to the push plate 30. The above-mentioned polishing procedure (1) describes the polishing process of a substrate S1 including a metal film 61 and a metal film 62 in a polished portion. However, Yu Yu The polishing part only has a metal film 6 1 for the substrate polishing (shown in Figure 4β), which can be polished to the height of X 2 first, and then polished to the height of γ 2, and then the same polishing process is continued for the two parts (1 ). In this case, the polishing rate of this part before the χ2 height can be increased to improve productivity; polishing can be performed between χ2 * γ2 heights to obtain the best suitable surface flatness. Use a single polishing The polishing procedure (2) of the stage 36 for polishing the metal thin film βΐ will be described in FIG. 2 with reference to FIG. 4 (b). This embodiment uses the turntable 36A shown in FIG. 2 and polishes Pad 1 5Α is set on turntable 36Α (Figure 2). Shown at The substrate S2 in FIG. 4 (B) is a substrate to be polished. The following description will only describe the polishing procedure (2) which is different from the polishing procedure Q): the height is increased to X 2 and the polishing of the substrate s 2 is performed. A gap under the positioning ring 3 is used, and the substrate carrier 10 is lifted here. Then, the substrate carrier

313737.ptd 第20頁 546185313737.ptd Page 20 546185

具10又再次被降低(不需在捲軸台36B上移動它),並以下 壓至拋光表面1 17A的定位環3從义2高度執行拋光到”高 度。利用此兩個程序中所獲得的結果基本上是相同的,但 疋,使用拋光程序(2)的過程時間將會較短,因為可節省 在使基材搬運機10移動至捲軸台36β的時間。 接著,拋光程序(3)將利用第6圖說明,並可參考第4 圖。所執行的拋光係使用一固定拋光件i 5B並接著使用一 拋光墊15A進行拋光。拋光程序(3)基本上係與拋光程序 (1)相同。The tool 10 is lowered again (without moving it on the reel table 36B), and the positioning ring 3 pressed down to the polishing surface 1 17A is polished from the height 2 to the "height. Use the results obtained in these two procedures Basically the same, but alas, the process time using the polishing procedure (2) will be shorter because it can save time in moving the substrate carrier 10 to the reel table 36β. Next, the polishing procedure (3) will utilize Figure 6 illustrates and reference can be made to Figure 4. The polishing performed is performed using a fixed polishing member i 5B followed by a polishing pad 15A. The polishing procedure (3) is basically the same as the polishing procedure (1).

不同於第1圖中的設備,第6圖中的設備係使用轉盤 36A上的固定拋光件15β,以及捲軸台36b上的拋光墊15A。 工件可以是顯示於第4(A)圖争的基材S1或是顯示於第4(B) 圖中的基材S2。Unlike the apparatus in Fig. 1, the apparatus in Fig. 6 uses a fixed polishing member 15β on a turntable 36A and a polishing pad 15A on a reel table 36b. The workpiece can be the substrate S1 shown in FIG. 4 (A) or the substrate S2 shown in FIG. 4 (B).

下面的說明也可應用一基材S2。換言之,在下文中 ’S2’可替代所有實施例中的,S1,。首先,基材載具1〇係利 用吸附力穩固基材S1。接著,基材載具1〇在轉盤3βΑ上移 動並降低直到定位環3(第2圖)接觸固定拋光件15B。在定 位環3與固定拋光件15B相接觸以後,基材載具1〇被輕微地 心升以在定位環3和固定拋光件1 5 B的抛光表面1 7 B間形成 一指定尺寸的間隙。其次,執行拋光使基材s丨下壓至固定 撤光件15B。由於定位環3對固定拋光件15B的初始壓力不 會造成”邊緣圓化”問題,因此在這種情況下並不需要持續 使定位環3壓住拋光表面1 7B以抑制反彈。 因為一指定尺寸的間隙已形成於定位環3和固定拋光The following description can also be applied to a substrate S2. In other words, in the following, 'S2' can replace S1 in all embodiments. First, the substrate carrier 10 is used to stabilize the substrate S1 using an adsorption force. Next, the substrate carrier 10 is moved on the turntable 3βA and lowered until the positioning ring 3 (Fig. 2) contacts the fixed polishing member 15B. After the positioning ring 3 contacts the fixed polishing member 15B, the substrate carrier 10 is slightly lifted to form a gap of a specified size between the positioning ring 3 and the polishing surface 17 B of the fixed polishing member 15B. Next, polishing is performed so that the substrate s 丨 is pressed down to the fixed light-removing member 15B. Since the initial pressure of the positioning ring 3 on the fixed polishing member 15B does not cause a "edge rounding" problem, in this case, it is not necessary to continuously hold the positioning ring 3 against the polishing surface 17B to suppress the rebound. Because a gap of a specified size has been formed in the positioning ring 3 and fixed polishing

3l3737.ptd 第21頁 546185 五、發明說明(18) 件15B的拋光表面17B之間,故可改進在基材S1的被拋光基 材表面SA1和固定拋光件1 5B間的拋光表面1 7A之間的拋光 溶液進入,而將增加拋光速率。另外,因為此項技術也會 减少定位環3的磨損,將可大大地延伸定位環3的使用壽 命。 當該設備已執行一指定量的拋光,即第一終點感測器 機制1 8感測出基材S1的被拋光基材表面s a 1已到達X1高度 可(如果疋基材S2則改為X2ifj度),在基材載具iq被抬升之 後,結束轉盤3 6 A上的抛光操作。 其次’由於基材載具1 〇係利用吸附力穩固基材s丨,基 鲁 材载具1 0係被移動至推板3 0上方的位置,然後降低定位環 3直到與拋光墊1 5 A相接觸。然後,將基材載具丨〇輕微地降 低’使定位環3被壓至拋光墊1 5 A。接著使基材s 1壓住拋光 塾15A,這將可使基材S1的邊緣執行均勻拋光。 α當該設備已經執行一預定量的拋光,並由第二終點感 1器機制1 9感測得知被拋光基材表面s a 1已經到達γ 1高度 0守(如果是S 2則改為X 2高度),基材載具丨〇將被抬升,並結 束捲軸台3 6 B上的拋光操作。然後在推板3 〇上移動基材載 具10,以傳送已拋光的基材S1到推板3〇。 此外,在拋光程序(3)中,並不先執行利用一固定拋 籲 酿件15B的拋光步驟,而是執行利用一拋光墊15A的拋光步 驟,這些步驟的次序可以互換。甚至在互換步驟次序時, 2可使定位環3壓住拋光墊15A而執行利用拋光墊15A的拋 先步驟,而利用一固定拋光料15β的拋光步驟應該在形成3l3737.ptd Page 21 546185 V. Description of the invention (18) Between the polished surface 17B of the 15B piece, the polishing surface 1 between the polished substrate surface SA1 of the substrate S1 and the fixed polishing member 1 5B can be improved. Intermittent polishing solution enters, and will increase the polishing rate. In addition, because this technology will also reduce the wear of the positioning ring 3, it will greatly extend the service life of the positioning ring 3. When the device has performed a specified amount of polishing, that is, the first end sensor mechanism 18 detects that the surface of the polished substrate S1 of the substrate S1 has reached the height of X1 (if the substrate S2 is changed to X2ifj Degrees), after the substrate carrier iq is lifted, the polishing operation on the turntable 3 6 A ends. Secondly, because the substrate carrier 10 is used to stabilize the substrate s 丨, the base material carrier 10 is moved to the position above the push plate 30, and then the positioning ring 3 is lowered until it reaches the polishing pad 1 5 A. Phase contact. Then, the substrate carrier is slightly lowered 'so that the positioning ring 3 is pressed to the polishing pad 15 A. Next, the substrate s 1 is pressed against the polishing pad 15A, which will enable the edge of the substrate S1 to be uniformly polished. α When the equipment has performed a predetermined amount of polishing, and the second end sensor 1 sensor mechanism 19 senses that the surface of the polished substrate sa 1 has reached γ 1 height 0 guard (if it is S 2 then change to X 2 height), the substrate carrier 丨 〇 will be lifted, and the polishing operation on the reel table 3 6 B will end. The substrate carrier 10 is then moved on the push plate 30 to transfer the polished substrate S1 to the push plate 30. In addition, in the polishing procedure (3), the polishing step using a fixed polishing piece 15B is not performed first, but the polishing step using a polishing pad 15A is performed, and the order of these steps can be interchanged. Even when the order of the steps is reversed, 2 can cause the positioning ring 3 to press the polishing pad 15A to perform the first step using the polishing pad 15A, and the polishing step using a fixed polishing material 15β should be formed

546185 五、發明說明(19) 於定位環3和固定拋光件15B之間的一指定間隙中執行。 在上述的實施例中,係利用一單一基材載具來執行兩 不同拋光工具1 5的連續拋光過程。然而,本發明也明顯適 用於使用三或者更多個拋光工具15的拋光執行。此外,上 述的特定例子僅說明金屬薄膜的拋光,但是,本發明也應 適用於其他薄膜拋光如絕緣體薄膜或淺溝隔絕層(shall〇w trench isolation, STI)過程。另外,本發明的拋光裝 置1僅僅需要一個拋光工具丨5便能維持操作,也可使用多 1抛光工具15。拋光裝置1不但可把壓頂力量施加於定位 % 3以維持操作,也可在定位環3和拋光表面丨7之間提供一 而不需施加壓力於定位環3。因此本發明提供一拋 和拋光方法,以提供基材的高平坦度、高拋光速 '產力’用以支持一廣泛範圍的拋光應用。 例中的抛圖光係穿為Λ發Λ另一實施例的一抛光裝置。本實施 定位調整機構4 Λ 施例的不同處是關於其定位環 定位調整H:: 2! 一設備中,並未提供定位環 置或者定 空氣汽缸12 〇係用以作為它的致動裝 ί …施壓機構而不使用脈衝馬達57於此一後述: 本實施例的y 精確地將定位Ϊ ϋ位環定位調整機構無法像上述實施例般 本實施例的機:於其相對拋光表面。在實際情況中, 加一向上作用二=f,持定位環與拋光表面相接觸時藉施 足夠維持定位严1 一定位^上以產生調整。施加之力量僅 ^ 抛光表面之間的接觸,從而允許一拋光546185 5. Description of the invention (19) is performed in a specified gap between the positioning ring 3 and the fixed polishing piece 15B. In the above embodiment, a single substrate carrier is used to perform the continuous polishing process of two different polishing tools 15. However, the present invention is also obviously applicable to a polishing execution using three or more polishing tools 15. In addition, the above specific examples only illustrate polishing of metal thin films, but the present invention should also be applicable to other thin film polishing processes such as insulator films or shallow trench isolation (STI) processes. In addition, the polishing apparatus 1 of the present invention requires only one polishing tool 5 to maintain operation, and an additional polishing tool 15 may be used. The polishing device 1 can not only apply a pressing force to the positioning% 3 to maintain the operation, but also provide one between the positioning ring 3 and the polishing surface 丨 7 without applying pressure to the positioning ring 3. Therefore, the present invention provides a polishing and polishing method to provide a substrate with a high flatness and a high polishing rate 'productivity' to support a wide range of polishing applications. The throwing light in the example is a polishing device of another embodiment. The difference between this embodiment of the positioning adjustment mechanism 4 Λ is the positioning ring positioning adjustment H :: 2! In a device, no positioning ring or fixed air cylinder 12 is used as its actuating device. … The pressing mechanism without using the pulse motor 57 will be described later: The positioning mechanism of this embodiment cannot accurately adjust the positioning ring positioning mechanism. The mechanism of this embodiment cannot be used on the relatively polished surface of this embodiment. In the actual situation, adding one upward and two acting = f, when the positioning ring is in contact with the polishing surface, it is sufficient to maintain the positioning tightness by one positioning ^ to produce adjustment. The applied force is only ^ the contact between the polished surfaces, allowing a polishing

546185 五、發明說明(20) 溶液輕易通過定位5进土 . 位王衣和拋光表面之間並進 光表面之間’以接根 L虚A / I占 致仏一個增加的拋光速率 在此實施例中的定A 心干 m m ^ ^ 疋位裱定位調整機構也可 離拋光表面,如μ、+、 在本發明中ί之實施例中。 壓下定位環至拋朵同上述,一個定位環 緣圓化,的問題,田表面。因此將可解決在 供一個定位環位w而改進基材拋光精度c 時,此機構可在ΐ 3周,機構,當基材被壓 成一間隙於其間疋^立環和拋光表面間調整 定位環和拋光夺面或使定位環與拋光表面 光速率(速度因之間的非實體接觸或輕 Α改進拋光生產力。 入基材表 。豪無疑 將定位環 施壓機構 抛光表面 同樣地, 下頂住拋 其定位關 輕微地接 微接觸將 面和拋 問地, 設置遠 係用以 的’邊 也提 光表面 係以形 觸。此 增加拋546185 V. Description of the invention (20) The solution easily enters the soil by positioning 5. The space between the king's clothing and the polished surface and between the light surface 'is connected to the root L virtual A / I account for an increased polishing rate in this embodiment The fixed A center stem mm ^ ^ position positioning adjustment mechanism can also be separated from the polishing surface, such as μ, +, in the embodiment of the present invention. Depressing the positioning ring to throw the same as above, a problem of rounding of the positioning ring, field surface. Therefore, when a positioning ring position w is provided to improve the polishing accuracy c of the substrate, the mechanism can adjust the positioning ring between the standing ring and the polishing surface in ΐ 3 weeks. And polishing polishing surface or make the positioning ring and polishing surface light rate (speed of non-physical contact between light or light A improve polishing productivity. Into the substrate table. How will undoubtedly the positioning ring pressure mechanism polishing surface, the same as the next to hold the polishing Its positioning point is slightly touched to touch the surface and the ground, and the side of the remote system is also used to raise the surface to shape the touch.

546185 圖式簡單說明 【圖式簡單說明】 本發明的這些特點、態樣和優點會藉由下面之描述、 專利範圍和伴隨圖示而更容易瞭解。 第1圖係顯示本發明的一實施例中的拋光裝置的外觀 圖; 第2圖係為第1圖中之拋光裝置的局部放大橫截面圖, 該基材載具係直接定位於轉盤上方; 第3圖係為一基材被定位於第1圖中之拋光裝置的基材 載具的平面圖; 第4 ( A)圖係顯示一部分拋光之基材,該基材係具有一 夾於第一金屬薄膜間的一金屬膜與另一金屬膜; 第4 ( B)圖係顯示由一金屬薄膜所組成的基材橫截面 圖,其中該金屬薄膜係被拋光; 第 5圖係 顯 示 本 發 明 另 一 實施 例 的 — 拋 光 裝 置 的 外 觀 圖; 第 6圖係 顯 示 本 發 明 再 另 一實 施 例 的 一 拋 光 裝 置 的 外 觀圖 第 7圖係 為 本 發 明 又 一 實 施例 的 拋 光 裝 置 的 局 部 放 大橫 截 面圖c > 【號 說 明】 1 抛光 裝 置 2 基 材 載 具 主 體 3 定位 環 4 定 位 環 定 位 調 整 機 構 5 保持 環 5A 頂 部 5B 致動 器 5C 突 出 部 分546185 Brief description of the drawings [Simplified description of the drawings] These features, aspects and advantages of the present invention will be easier to understand by the following description, patent scope and accompanying drawings. FIG. 1 is an external view of a polishing device in an embodiment of the present invention; FIG. 2 is a partially enlarged cross-sectional view of the polishing device in FIG. 1, and the substrate carrier is positioned directly above the turntable; FIG. 3 is a plan view of a substrate carrier on which the substrate is positioned in the polishing device of FIG. 1; FIG. 4 (A) shows a part of the polished substrate, and the substrate is A metal film and another metal film between the metal thin films; FIG. 4 (B) is a cross-sectional view of a substrate composed of a metal thin film, wherein the metal thin film is polished; FIG. 5 shows another aspect of the present invention. An embodiment-an external view of a polishing device; FIG. 6 is an external view of a polishing device according to yet another embodiment of the present invention; and FIG. 7 is a partially enlarged cross-sectional view of a polishing device according to another embodiment of the present invention. c > [number description] 1 polishing device 2 substrate carrier body 3 positioning ring 4 Positioning ring Positioning adjustment mechanism 5 Retaining ring 5A Top part 5B Actuator 5C protruding part

313737.ptd 第25頁 546185 圖式簡單說明 6 夾 盤 7 壓 力 片 8 中 心 袋 9 環 形 管 10 基 材 載 具 11 基 材 施 壓 機 構 12 基 材 載 具 驅動軸 13 載 具 頭 14 柩 轉 軸 15A 拋 光 墊 1 5B 固 定 拋 光 件 17 拋 光 表 面 18 第 — 終 點 感測器機構 19 第 二 終 點 感 測器機構 20 第 一 修 整 器 21至 23 壓 力 室 24 中 央 壓 力 室 25 中 間 壓 力 室 27 旋 轉 運 輸 機 28 基 材 反 轉 器 29 升 降 機 30 推 板 31至 35 流 體 路 徑 R1至 R5 調 Λ-/Γ 即 閥 36A轉盤 36B 捲 軸 台 42 密 封 環 50 第 二 修 整 器 51 負 載 電 池 52 萬 向 球 鉸 機 構 53 齒 條 軸 承 54 滑 輪 55 計 時 皮 帶 56 支 撐 單 元 56A 内 部 孔 洞 57 脈 衝 馬 達 58 滚 珠 螺 桿 59 滾 珠 螺 帽 60 濕 氣 阻 擋 物 61 金 屬 薄 膜 62 金 屬 薄 膜 81、 82 性 薄 膜 9卜 92 彈 性 薄 膜 115A 拋 光 墊313737.ptd Page 25 546185 Brief description of drawings 6 Chuck 7 Pressure plate 8 Center bag 9 Ring tube 10 Substrate carrier 11 Substrate pressure mechanism 12 Substrate carrier drive shaft 13 Carrier head 14 柩 Rotor 15A Polished Pad 1 5B Fixed polishing piece 17 Polished surface 18 First-finish sensor mechanism 19 Second finish sensor mechanism 20 First trimmer 21 to 23 Pressure chamber 24 Central pressure chamber 25 Middle pressure chamber 27 Rotary conveyor 28 Rotator 29 Elevator 30 Push plate 31 to 35 Fluid path R1 to R5 Adjust Λ- / Γ namely valve 36A turntable 36B reel stand 42 seal ring 50 second dresser 51 load battery 52 universal ball hinge mechanism 53 rack bearing 54 pulley 55 Timing belt 56 Support unit 56A Internal hole 57 Pulse motor 58 Ball screw 59 Ball nut 60 Moisture barrier 61 Metal film 62 Metal film 81, 8 2 thin film 9b 92 elastic thin film 115A polishing pad

313737.ptd 第26頁 546185 圖式簡單說明 117A 拋光表面 120 空氣汽缸313737.ptd Page 26 546185 Schematic description 117A Polished surface 120 Air cylinder

1HH 313737.ptd 第27頁1HH 313737.ptd Page 27

Claims (1)

546185 案號 91111401 六、申請專利範圍 ^年4月K曰 修J _年月 1. 種拋光裝置,係包括 一施 該基材載 一定 該施壓機 一定 定位該定 一抛光表 2.如申請專 包括一第 載具係可 基材與該 可下壓至 二拋光表 相對於該 朝向接近 一第一拋光台 一基材載具, 使該基材的一表面 壓機構, 具使該基 位環,裝 構壓至該 位環定位 位環,其 面的方向 利範圍第 二拋光台 移動其本 第一或第 該第二拋 面相接觸 基材調整 和遠離該 ,具有一第一拋 用以保持一基材 與該第一拋光表 用以對該第一拋 材表面與該第一 設於該基材載具 第一拋光表面上 調整機構,用以 中該基材係以朝 壓至該第一拋光 1項之拋光裝置, ,其具有一第二 身所保持之基材 二拋光表面相接 光表面上,其中 ,以及該定位環 定位該定位環, 第二拋光表面的 光表面, 並定位該基材,以 面相接觸; 光表面施壓,並藉 拋光表面相接觸; 上,用以環繞已被 的該基材,以及 相對該基材來調整 向接近和遠離該第 表面上。 其中該拋光裝置另 抛光表面,該基材 ,並選擇性地使該 觸;該施壓機構係 ’該基材係與該第 定位調整機構係可 其中該定位環係以 方向施壓於該基材 3. 如申請專利範圍第2項之拋光裝置,其中該第一拋光表 面係比該第二拋光表面堅硬。 4. 如申請專利範圍第2項之拋光裝置,其中該第一拋光台 上係提供一固定拋光件並定義該第一拋光表面;以及546185 Case No. 91111401 Sixth, the scope of patent application ^ April, April K. Rev. J _ month 1. A polishing device, which includes a device to apply the substrate, a certain position of the pressure machine, a certain positioning, a fixed table 2. If applied It specifically includes a first carrier which can be a substrate and the pressing-down to two polishing table, a substrate carrier which is close to a first polishing table with respect to the direction, a surface pressing mechanism of the substrate, and the base position. Ring, the structure is pressed to the positioning ring, the positioning direction of the ring, the surface direction of the second polishing table is moved, the first polishing surface or the second polishing surface is in contact with the substrate to adjust and away from the substrate, and has a first polishing A substrate and the first polishing table are held to adjust the first throwing surface and the first adjusting mechanism provided on the first polishing surface of the substrate carrier, so that the substrate is pressed to the first surface. The polishing device of the first polishing item has a polishing surface of a substrate held by a second body and a polishing surface contacting the light surface, wherein the positioning ring positions the positioning ring and the light surface of the second polishing surface, and Position the substrate to make contact with each other Light pressing surface, and in contact by the polishing surface; on, has been to surround the substrate, and the substrate is adjusted relative to the first towards and away from the surface. Wherein the polishing device polishes the surface, the substrate, and selectively makes the contact; the pressure applying mechanism is that the substrate system and the first positioning adjustment mechanism are capable of pressing the positioning ring system on the substrate in a direction. 3. The polishing device according to item 2 of the application, wherein the first polishing surface is harder than the second polishing surface. 4. The polishing device according to item 2 of the patent application, wherein a fixed polishing member is provided on the first polishing table and defines the first polishing surface; and III ΜIII Μ B 313737.pic 第1頁 2003. 04. 25. 027 义 ί :修 E 546185 年月η d ι_不1九_號91111401_中一年j月,Γ日 修正_ 利範圍 該第二拋光台上係提供一拋光墊並定義該第二拋光表 面。 5. 如申請專利範圍第2至4項其中任一項之拋光裝置,其 中該第一拋光台和第二拋光台至少有一包括一終點感 測器以感測被壓於其上之基材是否已拋光至一指定 量。 6. 如申請專利範圍第1項之拋光裝置,其中該施壓機構係 包括: 一基材施壓構件,係由該基材載具的一基材保持 側所提供,並定義一於該基材保持側和保持於其上之 基材間的可膨脹室; 一加壓流體供應系統,用以供應一加壓流體進入 該可膨脹室; 該定位環係扣緊於該基材載具上;以及 該定位環定位調整機構係可相對於該基材調整定 位該定位環,其中該基材係藉基材施壓構件被壓至該 第一拋光表面,係由導入加壓流體至該可膨脹室所產 生的膨脹引起,並以朝向接近和遠離該第二拋光表面 的方向施壓。 7. 如申請專利範圍第2項之拋光裝置,其中該施壓機構係 包括: 一施壓構件,係由該基材載具的一基材保持側所 提供,並定義一於該基材保持側和保持於其上之基材 間的可膨脹室;B 313737.pic Page 1 of 2003. 04. 25.027 righteousness ί: repair E 546185 years η d ι_ not _ 91111401_ 1 on the 9th month of the year j, Γ Amended _ Lee scope of the second polishing table The upper system provides a polishing pad and defines the second polishing surface. 5. The polishing device according to any one of claims 2 to 4, wherein at least one of the first polishing table and the second polishing table includes an end point sensor to detect whether the substrate pressed on it is Polished to a specified amount. 6. The polishing device according to item 1 of the patent application scope, wherein the pressure applying mechanism comprises: a substrate pressing member provided by a substrate holding side of the substrate carrier and defining a base An expandable chamber between the material holding side and the substrate held thereon; a pressurized fluid supply system for supplying a pressurized fluid into the expandable chamber; the positioning ring is fastened on the substrate carrier And the positioning ring positioning adjustment mechanism is capable of adjusting and positioning the positioning ring relative to the substrate, wherein the substrate is pressed to the first polishing surface by a substrate pressing member, and a pressurized fluid is introduced to the The expansion produced by the expansion chamber is caused and pressure is applied in a direction toward and away from the second polished surface. 7. The polishing device according to item 2 of the patent application scope, wherein the pressure applying mechanism comprises: a pressure applying member provided by a substrate holding side of the substrate carrier and defining a substrate holding An expandable chamber between the side and the substrate held thereon; 313737.ptc 第2頁 2003.05.05.028313737.ptc Page 2 2003.05.05.028 該可膨脹室; 該定位環係扣緊於該基材載具上;以及 該定位環定位調整機構係可相對於該基材調整定 位該定位環,其中該基材係藉基材施壓構件被壓至該 第一拋光表面,係由導入加壓流體至該可膨脹室所產 生的膨服引起^並以朝向接近和退離该弟一抛光表面 的方向施壓。 8. 如申請專利範圍第6項或第7項之拋光裝置,其中該定 位環施壓機構係包括: 一夾盤,係設置於該基材載具的一基材保持側 上;以及 一彈性片,係連接於該夾盤的外圍邊緣和該基材 載具的外圍部分之間,以利用該基材載具的基材保持 側、夾盤和彈性片來定義該可膨脹室。 9. 如申請專利範圍第8項之拋光裝置,其中該定位環施壓 機構係包括: 至少一個彈性構件,係由該夾盤保持基材的基材 保持側所提供,每一個彈性構件定義一於該夾盤的基 材保持側和該基材間的可膨脹室;以及 該加壓流體供應系統,供應加壓流體至個別的可 膨脹室。 1 0. —種用以拋光一基材的拋光方法,其係將該基材壓至 一拋光表面,而該基材係被一定位環所圍繞,該方法 係包括:The expandable chamber; the positioning ring is fastened to the substrate carrier; and the positioning ring positioning adjustment mechanism is capable of adjusting and positioning the positioning ring relative to the substrate, wherein the substrate is a pressure member by the substrate The pressing to the first polishing surface is caused by the swelling caused by the introduction of a pressurized fluid into the expandable chamber, and the pressure is applied in a direction toward and away from the first polishing surface. 8. The polishing device of claim 6 or claim 7, wherein the positioning ring pressure mechanism includes: a chuck, which is disposed on a substrate holding side of the substrate carrier; and an elasticity The sheet is connected between the peripheral edge of the chuck and the peripheral part of the substrate carrier to define the expandable chamber by using the substrate holding side of the substrate carrier, the chuck and the elastic sheet. 9. The polishing device according to item 8 of the patent application scope, wherein the positioning ring pressing mechanism comprises: at least one elastic member provided by the substrate holding side of the chuck holding substrate, and each elastic member defines a An expandable chamber between the substrate holding side of the chuck and the substrate; and the pressurized fluid supply system for supplying pressurized fluid to individual expandable chambers. 1 0. A polishing method for polishing a substrate, wherein the substrate is pressed to a polishing surface, and the substrate is surrounded by a positioning ring. The method includes: 313737.ptc 第3頁 2003.04. 25.029 〆 1546185 、- ^ ,· · — - / ' _ 號 91111401_V 年 4 月日__ 六、申請專利範圍 一第一步驟,用以使該基材和該拋光表面產生一 相對滑動以在此一狀況下抛光該基材,該基材係壓住 該拋光表面,而該定位環係設置遠離或輕微地接觸該 拋光表面;以及 一第二步驟,用以使該基材和該拋光表面產生一 相對滑動以在此一狀況下拋光該基材,該定位環和該 基材係均壓住該拋光表面。 11 ·如申請專利範圍第1 0項之拋光方法,其中使用於該第 二步驟的拋光表面係比使用於該第一步驟的拋光表面 堅硬。 1 2 .如申請專利範圍第11項之拋光方法,其中在該第一步 驟中一拋光墊係被用以定義該拋光表面。 1 3 .如申請專利範圍第1 1項或第1 2項之拋光方法,其中在 該第二步驟中一固定研磨件係被用以定義該拋光表面 〇 1 4 .如申請專利範圍第1 1項之拋光方法,另包括: 一第三步驟,用以感測該基材是否已在至少第一 或第二步驟中拋光至一指定量。 1 5 .如申請專利範圍第1 0項之拋光方法,其中該第二步驟 係在該第一步驟之後執行。 1 6 .如申請專利範圍第1 0項之拋光方法,其中該第一步驟 係在該第二步驟之後執行。313737.ptc Page 3 2003.04. 25.029 〆1546185,-^, · ·--/ / _ No. 91111401_V April 4, __ VI. Application for a patent scope a first step to make the substrate and the polished surface Generating a relative slide to polish the substrate under this condition, the substrate is pressed against the polishing surface, and the positioning ring is disposed away from or slightly contacts the polishing surface; and a second step for making the A relative sliding occurs between the substrate and the polishing surface to polish the substrate in this condition, and the positioning ring and the substrate both press against the polishing surface. 11. The polishing method according to item 10 of the application, wherein the polishing surface used in the second step is harder than the polishing surface used in the first step. 12. The polishing method according to item 11 of the patent application, wherein a polishing pad is used to define the polishing surface in the first step. 1 3. The polishing method according to item 11 or 12 of the scope of patent application, wherein a fixed abrasive member is used to define the polishing surface in the second step. 0 1 4. The polishing method of this item further includes: a third step for sensing whether the substrate has been polished to a specified amount in at least the first or second step. 15. The polishing method according to item 10 of the patent application scope, wherein the second step is performed after the first step. 16. The polishing method according to item 10 of the application, wherein the first step is performed after the second step. 313737.ptc 第4頁 2003. 04. 25.030 / 546185 _案號 91111401_h 年 4 月 $曰_^_ 六、申請專利範圍 1 7. —種用以拋光一基材的拋光方法,其係將該基材壓至 一拋光表面,而該基材係被一定位環所圍繞,該方法 係包括: 在此一狀況下拋光該基材,該基材係被壓至第一 拋光表面,該定位環係設置遠離或輕微地接觸該第一 拋光表面;以及 在此一狀況下拋光該基材,該定位環和該基材係 均壓住該第二拋光表面。 1 8 .如申請專利範圍第1 7項之拋光方法,其中該第一拋光 表面係比該第二拋光表面堅硬。 1 9 .如申請專利範圍第1 7項之拋光方法,其中該第一拋光 表面係由一固定研磨件所製成,而該第二拋光表面係 由一拋光墊所製成。 〇p i:|r—u: 年月 κ 福允丨313737.ptc Page 4 2003. 04. 25.030 / 546185 _ Case No. 91111401_h April _ ^ _ VI. Application for patent scope 1 7. A polishing method for polishing a substrate, which is based on the substrate The material is pressed to a polishing surface, and the substrate is surrounded by a positioning ring. The method includes: polishing the substrate in this condition, the substrate is pressed to a first polishing surface, and the positioning ring is Set away from or slightly contact the first polishing surface; and polish the substrate under this condition, the positioning ring and the substrate are both pressed against the second polishing surface. 18. The polishing method according to item 17 of the scope of patent application, wherein the first polishing surface is harder than the second polishing surface. 19. The polishing method according to item 17 of the patent application, wherein the first polishing surface is made of a fixed abrasive member, and the second polishing surface is made of a polishing pad. 〇p i: | r--u: year and month κ Fuyun 丨 313737.ptc 第5頁 2003. 04.25.031 546185313737.ptc Page 5 2003. 04.25.031 546185 546185546185 4.4. Y2 X2Y2 X2 第4B圖 冬正S46185Figure 4B Dongzheng S46185 44 J2 59 56 56AJ2 59 56 56A 5 55 5
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JP2001013899A JP2002187060A (en) 2000-10-11 2001-01-22 Substrate holding device, polishing device and grinding method
JP2001161393 2001-05-29

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