WO2001023138A1 - Wafer grinder - Google Patents

Wafer grinder Download PDF

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Publication number
WO2001023138A1
WO2001023138A1 PCT/JP1999/005291 JP9905291W WO0123138A1 WO 2001023138 A1 WO2001023138 A1 WO 2001023138A1 JP 9905291 W JP9905291 W JP 9905291W WO 0123138 A1 WO0123138 A1 WO 0123138A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
polishing
carrier
air
retainer ring
Prior art date
Application number
PCT/JP1999/005291
Other languages
French (fr)
Japanese (ja)
Inventor
Takao Inaba
Minoru Numoto
Original Assignee
Tokyo Seimitsu Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP10084115A priority Critical patent/JP2973403B2/en
Application filed by Tokyo Seimitsu Co., Ltd. filed Critical Tokyo Seimitsu Co., Ltd.
Priority to PCT/JP1999/005291 priority patent/WO2001023138A1/en
Publication of WO2001023138A1 publication Critical patent/WO2001023138A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Definitions

  • the present invention relates to a wafer polishing apparatus, and more particularly, to a polishing apparatus for semiconductors by chemical mechanical polishing (CMP).
  • CMP chemical mechanical polishing
  • a polishing apparatus that forms a pressurized air layer between a carrier and a wafer has been proposed.
  • a pressing force from pressing means for pressing the carrier is provided. Is transmitted through the pressure air layer to ⁇ ⁇ , so that the ⁇ is pressed against the polishing platen and polished.
  • the wafer polishing apparatus is provided with a retainer ring surrounding the periphery of the wafer.
  • a retainer ring surrounding the periphery of the wafer. By bringing the periphery of the wafer into contact with the retainer ring, the wafer is removed from the carrier. Prevents jumping out.
  • the retainer ring has high rigidity from the viewpoint of preventing the protrusion from popping out, and is used by being attached to another member having a high level of Oka I.
  • the wafer polishing apparatus since the wafer polishing apparatus has high rigidity on the retainer ring side, the wafer is pressed against the retainer ring in a point contact state. As a result, since the pressure concentrates on the point contact portion, defects such as cracks may occur in the contact portion.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a polishing machine having a retainer ring that does not cause a defect in the device.
  • the present invention provides a rotating head that holds a wafer on a holding head.
  • a polishing apparatus for polishing a wafer by pressing the polishing head against a polishing platen the holding head is rotated, and the head body is disposed opposite to the polishing platen;
  • a carrier supported movably upward and downward, and a pressure fluid layer formed between the carrier and the wafer by blowing air toward the back surface of the carrier provided on the lower surface of the carrier.
  • Elastic to shape It is characterized by comprising a deformable ring and
  • the retainer ring when the peripheral edge of the roller contacts the retainer ring during polishing, the retainer ring is pressed by the pressure from the roller due to the lateral contact of the roller. It elastically deforms into a shape that follows the shape of the periphery. As a result, since the sheet is pressed in a state of being in surface contact with the retainer ring, the pressure applied to the sheet A from the retainer ring is dispersed, and defects such as cracks and the like do not occur in the sheet A.
  • FIG. 1 is an overall structural view of a wafer polishing apparatus according to an embodiment of the present invention
  • FIG. 2 is a plan view of a holding head applied to the wafer polishing apparatus of FIG. 1
  • FIG. 3 is a longitudinal sectional view of the holding head taken along line 3-3 in FIG. 2
  • FIG. 4 is an explanatory view showing a state in which the retainer ring is elastically deformed by the contact of the wafer.
  • FIG. 1 is a structural diagram of a wafer polishing apparatus according to an embodiment of the present invention.
  • the polishing apparatus 10 shown in FIG. 1 mainly includes a polishing platen 12 and a holding head 14.
  • the polishing platen 12 is formed in a disk shape, and a polishing cloth 16 is provided on the upper surface thereof.
  • a spindle 18 is connected to a lower portion of the polishing table 12, and the spindle 18 is connected to an output shaft (not shown) of the motor 20.
  • the polishing platen 12 rotates in the direction of arrow A by driving the motor 20, and slurry is supplied from a nozzle (not shown) onto the polishing cloth 16 of the rotating polishing platen 12.
  • the holding head 14 is moved up and down by an elevating device (not shown), and is moved up when the polishing object is set on the holding head 14. In addition, the holding head 14 is moved downward when polishing the wafer, and presses the wafer against the polishing cloth 16.
  • FIG. 1 is a plan view of the holding head 14, and FIG. 3 is a longitudinal sectional view taken along line 3-3 in FIG.
  • the holding head 14 shown in Fig. 3 is composed of the head body 22, carrier 24, guide ring 26, polished surface adjustment ring 28, retainer ring 30 and rubber sheet 3 2 , A differential transformer 34, and a pressing member 36.
  • the head body 22 is formed in a disk shape, and has a rotating shaft 38 connected to the upper surface thereof, and is rotated in the direction of arrow B by a motor (not shown) connected to the rotating shaft 38. .
  • air supply paths 40, 42, and 44 are formed in the head body 22.
  • the air supply passage 40 extends outside the holding head 14 as shown by a two-dot chain line in FIG. 3, and is supplied through an air pump (AP: air) through a regulator (R) 46 A. pump) 4 8
  • AP air
  • R regulator
  • Numerals 4 are respectively connected to pumps 48 through regulators 46C.
  • the carrier 24 is formed in a substantially cylindrical shape, and is arranged below the head body 22 coaxially with the head body 12.
  • a concave portion 25 is formed on the lower surface of the carrier 24, and a porous plate 50 having air permeability is accommodated in the concave portion 25.
  • Air passages 52.5.2 formed in the carrier 24 are communicated with the porous plate 50, and these air passages 5 and 52 are held as shown by a two-dot chain line in the figure. It extends outside of the port 14 and is connected to a suction pump (SP) 76. Therefore, when the suction pump 76 is driven, the wafer 54 is sucked by the porous plate 50 and held by the porous plate 50.
  • the porous plate 50 has a large number of air passages inside, and the corrected paper (Rule 91) For example, a material made of a sintered body of a ceramic material is used.
  • the carrier 24 is provided with a number of air supply paths 78, 78, each having an ejection port formed on the outer peripheral portion of the lower surface of the carrier 24 (only two force points are shown in FIG. 3). .
  • the air supply passages 78, 78 ... extend outside the holding head 14 as shown by a two-dot chain line in the figure, and are connected to the air pump 48 via a regulator 46D. ing. Therefore, the compressed air from the air pump 48 is blown out to the air chamber 56 between the porous plate 50 and the porcelain plate 54 through the air supply paths 78, 78. As a result, a pressure air layer is formed in the air chamber 56, and the pressing force of the carrier 24 is transmitted to the carrier 54 through the pressure air layer.
  • the wafer 54 is pressed against the polishing pad 16 by the pressing force transmitted through the pressure air layer.
  • the air blown out from the air supply paths 78, 78,... Is exhausted to the outside through an exhaust hole (not shown) formed in the polishing surface adjustment ring 28.
  • one rubber sheet 32 is arranged between the head body 22 and the carrier 24.
  • This rubber sheet 32 is formed in a disk shape with a uniform thickness.
  • the rubber sheet 32 is fixed to the lower surface of the head body 2 by two large and small annular stoppers 58, 60.
  • the rubber sheet 32 is divided into a center part 32 A and a middle part 32 B with the clasp 60 as a boundary, and the middle part 32 B and a peripheral part with the clasp 58 as a boundary.
  • the part 32C functions as an air bag for pressing the polishing surface adjustment ring 28.
  • the air supply path 40 communicates with an air bag 62 defined by a central portion 32 A of the rubber sheet 32 among the air bags. Therefore, when compressed air is supplied from the air supply path 40 to the airbag 62, the central portion 32A of the rubber sheet 32 is elastically deformed by air pressure and presses the upper surface of the carrier 24. Thereby, a pressing force of the wafer 54 against the polishing pad 16 can be obtained. Also, by adjusting the air pressure with the regulator 46 A, the pressing force (polishing pressure) of the wafer 54 can be controlled.
  • the guide ring 26 is formed in a cylindrical shape and is provided at the lower part of the head body 22 in a corrected form (Rule 91). 22 Coaxially arranged with 2. The guide ring 26 is fixed to the head body 22 via a rubber sheet 32. A polished surface adjustment ring 28 is arranged between the guide ring 26 and the carrier 24.
  • an annular air bag 64 defined by an outer peripheral portion 32C of the rubber sheet 32 and a stopper 58 is formed above the polishing surface adjusting ring 28.
  • the air supply path 44 is communicated with the air bag 64. Therefore, when compressed air is supplied from the air supply path 44 to the airbag 64, the outer peripheral portion 32C of the rubber sheet 32 is elastically deformed by air pressure, and the annular upper surface 28 of the polishing surface adjusting ring 28 is formed. A is pressed, and the annular lower surface 28 B of the polishing surface adjusting ring 8 is pressed against the polishing cloth 16.
  • the pressing force of the polished surface adjustment ring 28 can be controlled by adjusting the air pressure with a regulator at 46 C overnight.
  • a pressing member 36 is disposed between the carrier 2 and the polishing surface adjusting ring 28.
  • the pressing member 36 is composed of a main body 36A, a head 36B, support arms 36C and 36C, and legs 36D and 36D.
  • the head 36B, the supporting arm 36C, and the leg 36D of the pressing member 36 are formed at regular intervals of three as shown by dotted lines in FIG.
  • the main body 36 A of the pressing member 36 shown in FIG. 3 is disposed in an opening 29 formed in the polishing surface adjusting ring 18.
  • the head 36 B of the pressing member 36 is formed integrally with the main body 36 A, and is arranged in a gap between the carrier 24 and the polishing surface adjusting ring 28.
  • an annular airbag 66 defined by an intermediate portion 32B of the rubber sheet 32 and stoppers 58, 60 is formed.
  • the air supply path 42 is connected to the air bag 66. Therefore, when compressed air is supplied from the air supply passage 42 to the air bag 66, the intermediate portion 32B of the rubber sheet 32 is elastically deformed by air pressure, and the head 36B of the pressing member 36 is compressed. Press. As a result, the lower surface 37 of the leg 36D of the pressing member 36 is pressed against the polishing pad 16. In addition, the pressing force of the pressing member 36 can be controlled by adjusting the air pressure with a regulator 46B. Ma The leg 36D is disposed in a through hole 28C formed in the polished surface adjustment ring 28.
  • the pressing member 38 is formed using an amber having a very small coefficient of thermal expansion as a base material in order to prevent thermal expansion due to polishing processing heat, and the lower surface 37 pressed against the polishing cloth 16 is Abrasive cloth 16 is coated with diamond so as not to be polished.
  • a differential transformer 34 for detecting the amount of polishing of the wafer 54 is provided at the tip of the support arm 36 C of the pressing member 36.
  • the differential transformer 34 includes a core 70, a bobbin 72, and a contact 74, and the bobbin 72 is fixed to a distal end portion of a support arm 36 C of a pressing member 36,
  • the core 70 is vertically movably arranged in the bobbin 72.
  • the contact 74 is provided below the core 70, and the contact 74 is in contact with the carrier 24.
  • An arithmetic unit (not shown) is connected to the bobbin 72, and the arithmetic unit calculates the amount of polishing of the penny 54 based on the amount of vertical movement of the core 70 with respect to the bobbin 72.
  • a retainer ring 30 is vertically movably fitted into the outer periphery of the lower part of the carrier 24.
  • the retainer ring 30 is brought into contact with the polishing pad 16 during polishing of the wafer 54.
  • the wafer 54 is moved laterally by the rotational force of the polishing pad 16 and abuts on the inner peripheral surface of the retainer ring 30, whereby the wafer from the carrier 24 is moved.
  • the jumping out of 5 4 is blocked by the retaining ring 30.
  • a pressing force P from the wafer 54 due to the lateral contact of the peripheral edge 54 A of the wafer 54 as shown in FIG. Deforms from the original shape indicated by the two-dot chain line, and elastically deforms into a shape along the shape of the periphery 54 A of the wafer 54. Therefore, the wafer 54 is pressed against the retainer ring 30 in a state of surface contact with the retainer ring 30 within a range of the angle ⁇ .
  • not only resin but also metal retainer rings may be applied.
  • the suction pump 76 is driven to adsorb and hold the wafer 54 to be polished on the porous plate 50.
  • the holding head 14 is lowered, and the lowering movement is stopped at a position where the contact surface of the polishing surface adjusting ring 28 of the holding head 14 comes into contact with the polishing pad 16.
  • the suction pump 76 is stopped to release the suction of the above-mentioned No. 184, and the No. 154 is placed on the polishing pad 16.
  • the air pump 48 is driven to supply the compressed air to the space 56 via the air path 78, and a pressure air layer is formed in the air chamber 56.
  • the regulator 46 D controls the regulator 46 D, the supply amount of compressed air is adjusted, and the pressure of the pressure air layer is set to a predetermined pressure.
  • the compressed air from the pump 48 is supplied to the air bag 62 through the air supply passage 40, and the center portion 32A of the rubber sheet 32 is elastically deformed by the internal air pressure to make the carrier 2 elastic. 4 is pressed, and 18 5 is pressed against the polishing pad 16 through the pressure air layer.
  • the internal air pressure is adjusted to a desired pressure by adjusting the air pressure with a regulator at 46 A, and the pressing force of the wafer 54 against the polishing pad 16 is kept constant.
  • the compressed air from the pump 40 is supplied to the air-back 64 through the air supply path 44, and the outer peripheral portion 32C of the rubber sheet 32 is elastically deformed by the internal air pressure.
  • the polishing surface adjustment ring 28 is pressed, and the lower surfaces of the polishing surface adjustment ring 28 and the retainer ring 30 are pressed against the polishing cloth 16.
  • the compressed air from the pump 40 is supplied to the airbag 66 through the air supply path 42, and the intermediate portion 32B of the rubber sheet 32 is elastically deformed by the internal air pressure to cause the pressing member 36 to deform.
  • the lower surface 37 of the pressing member 36 is pressed against the polishing pad 16. Thereafter, the polishing plate 12 and the holding head 14 are rotated to start polishing the wafer 54.
  • the wafer 54 is moved in the lateral direction by the rotation of the polishing cloth 16 and is polished in a state where its periphery is pressed against the retaining ring 30.
  • the retainer ring 30 is elastically deformed by the pressing force P from the wafer 54 to a shape following the shape of the peripheral edge 54 A of the wafer 54.
  • the carrier 184 is pressed against the retainer ring 30 in surface contact with the retainer ring 30, and the pressure applied to the retainer ring 30 from the retainer ring 30 is dispersed. Therefore, there are no defects such as cracks and cracks.
  • the polishing amount during polishing is as follows. The contact amount of the contact 74 of the differential transformer 34 is in contact with the carrier 24. It is calculated by the arithmetic unit based on the amount of fall and fall of 70.
  • the polishing apparatus 10 is stopped, and the polishing of FIG. 54 ends.
  • the polishing of one wafer 54 is completed, and the polishing of the second wafer and subsequent wafers 54 may be repeated by repeating the above-described steps.
  • the retainer ring is shaped into the shape of the peripheral edge of 18 by the pressing force of 18 due to the lateral contact of the A8. Since it is elastically deformed into a shape along the shape, the pressure applied to the surface from the retainer is dispersed, and defects such as cracks and chips do not occur in the structure.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer grinder is provided with a retainer ring unlikely to damage a wafer. In the wafer grinder, a wafer (54) is ground with a layer of compressed air formed between a career (24) and the wafer (54), and a retainer ring (30) for preventing the wafer (54) from leaving the career (24) is formed such that it elastically deforms to meet the border of the wafer (54) when pressed by the wafer (54). Since the wafer (54) is urged in contact with the retainer ring (30) during grinding, the pressure acting on the wafer (54) from the retainer ring (30) is distributed so that the wafer (54) may not suffer damage.

Description

ゥニーハ研磨装置 ゥ Niha polishing machine
技術分野 Technical field
本発明はゥエーハ研磨装置に係り、 特に化学的機械研磨法 (C M P : Chemical Mechanical Polishing ) による半導体ゥヱ一八の研磨装置に関する。 明  The present invention relates to a wafer polishing apparatus, and more particularly, to a polishing apparatus for semiconductors by chemical mechanical polishing (CMP). Light
背景技術 田 Background technology
この種の半導体ゥヱーハ研磨装置として、 キャリアとゥヱ—八との間に圧力エア層 を形成する研磨装置が提案されており、 この研磨装置によれば、 キャリアを押圧する 押圧手段からの押圧力を前記圧力エア層を介してゥヱ一八に伝達することにより、 ゥ ニーハを研磨定盤に押し付けて研磨する。  As this type of semiconductor wafer polishing apparatus, a polishing apparatus that forms a pressurized air layer between a carrier and a wafer has been proposed. According to this polishing apparatus, a pressing force from pressing means for pressing the carrier is provided. Is transmitted through the pressure air layer to ゥ ヱ, so that the ハ is pressed against the polishing platen and polished.
また、 前記ゥヱ一ハ研磨装置には、 ゥヱ一ハの周縁を包囲するリテ一ナリングが設 けられ、 このリテーナリングにゥェ一ハの周縁を当接させることによりキャリアから のゥヱ一八の飛び出しを防止している。 前記リテ一ナリングは、 ゥェ一八の飛び出し を防止する観点から剛性が高く、 また、 岡 I胜の高い別の部材に取り付けられて使用さ れている。  Further, the wafer polishing apparatus is provided with a retainer ring surrounding the periphery of the wafer. By bringing the periphery of the wafer into contact with the retainer ring, the wafer is removed from the carrier. Prevents jumping out. The retainer ring has high rigidity from the viewpoint of preventing the protrusion from popping out, and is used by being attached to another member having a high level of Oka I.
しかしながら、 前記ゥヱーハ研磨装置は、 リテーナリング側の剛性が高いため、 ゥ エーハはリテーナリングに対して点接触の状態で押し付けられる。 これにより、 ゥェ 一八は、 前記点接触部分に圧力が集中するので、 その接触部分に割れ欠け等の欠陥が 発生する場合があるという欠点がある。  However, since the wafer polishing apparatus has high rigidity on the retainer ring side, the wafer is pressed against the retainer ring in a point contact state. As a result, since the pressure concentrates on the point contact portion, defects such as cracks may occur in the contact portion.
本発明は、 このような事情に鑑みてなされたもので、 ゥエー八に欠陥を生じさせな いリテーナリングを備えたゥヱ一ハ研磨装置を提供することを目的とする。  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a polishing machine having a retainer ring that does not cause a defect in the device.
発明の開示 Disclosure of the invention
本発明は、 前記目的を達成するために、 ゥユーハを保持へッ ドに保持し回転する研 磨定盤に押し付けて、 ゥュ一ハを研磨する研磨装置において、 前記保持へッ ドは、 回 転すると共に前記研磨定盤に対向配置されるへッ ド本体と、 前記へッ ド本体に上下方 向移動自在に支持されたキャリアと、 前記キャリアの下面に設けられると共に前記ゥ エー八の裏面に向けてエアを吹き出すことにより、 キヤリアとゥェ一ハとの間に圧力 流体層を形成するエア吹出部材と、 前記キャリアを前記研磨定盤に向けて押圧するこ とにより、 前記ゥニーハを前記圧力流体層を介して前記研磨定盤に押し付ける押圧手 段と、 前記キャリアの下部外周部に上下移動可能に嵌入され、 該キャリアからのゥェ —ハの飛び出しを防止すると共に、 ゥヱ一八の横方向からの当接によるゥヱ一八の押 圧力でゥヱーハの周縁の形状に沿った形状に弾性変形するリングと、 から成ることを 特徴としている。 In order to achieve the above object, the present invention provides a rotating head that holds a wafer on a holding head. In a polishing apparatus for polishing a wafer by pressing the polishing head against a polishing platen, the holding head is rotated, and the head body is disposed opposite to the polishing platen; A carrier supported movably upward and downward, and a pressure fluid layer formed between the carrier and the wafer by blowing air toward the back surface of the carrier provided on the lower surface of the carrier. An air blowing member to be pressed, a pressing means for pressing the carrier toward the polishing platen by pressing the carrier toward the polishing platen, and a pressing means for pressing the pennies against the polishing platen via the pressure fluid layer. It is fitted so that it can move up and down, prevents the wafer from jumping out of the carrier, and follows the shape of the periphery of the wafer with the pressing force of 18 by the abutting from the 18 side. Elastic to shape It is characterized by comprising a deformable ring and
本発明によれば、 研磨中にゥヱ一八の周縁がリテーナリングに当接すると、 リテー ナリングは、 ゥヱ一ハの横方向からの当接によるゥェ一ハからの押圧力でゥエー八の 周縁の形状に沿った形状に弾性変形する。 これにより、 ゥヱ一ハは、 リテ一ナリング に面接触した状態で押し付けられるので、 リテ一ナリングからゥエー八にかかる圧力 が分散し、 ゥエー八に割れ欠け等の欠陥は生じない。 図面の簡単な説明  According to the present invention, when the peripheral edge of the roller contacts the retainer ring during polishing, the retainer ring is pressed by the pressure from the roller due to the lateral contact of the roller. It elastically deforms into a shape that follows the shape of the periphery. As a result, since the sheet is pressed in a state of being in surface contact with the retainer ring, the pressure applied to the sheet A from the retainer ring is dispersed, and defects such as cracks and the like do not occur in the sheet A. BRIEF DESCRIPTION OF THE FIGURES
図 1は、本発明の実施の形態に係るゥユーハ研磨装置の全体構造図であり、図 2は、 図 1のゥエーハ研磨装置に適用された保持へッ ドの平面図であり、 図 3は、 図 2上で 3— 3線に沿う保持へッ ドの縦断面図であり、 図 4は、 ゥヱーハの当接によってリテ ーナリングが弾性変形した状態を示す説明図である。 発明を実施するための最良の形態  FIG. 1 is an overall structural view of a wafer polishing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of a holding head applied to the wafer polishing apparatus of FIG. 1, and FIG. FIG. 3 is a longitudinal sectional view of the holding head taken along line 3-3 in FIG. 2, and FIG. 4 is an explanatory view showing a state in which the retainer ring is elastically deformed by the contact of the wafer. BEST MODE FOR CARRYING OUT THE INVENTION
以下添付図面に従って本発明に係るゥニーハ研磨装置の好ましい実施の形態につい て詳説する。 図 1は、 本発明の実施の形態に係るゥユーハ研磨装置の構造図である。 同図に示すゥヱ一ハ研磨装置 1 0は、 主として研磨定盤 1 2と保持へッ ド 1 4とか ら構成される。 研磨定盤 1 2は円盤状に形成されており、 その上面には研磨布 1 6が 0 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of a penniha polishing apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a structural diagram of a wafer polishing apparatus according to an embodiment of the present invention. The polishing apparatus 10 shown in FIG. 1 mainly includes a polishing platen 12 and a holding head 14. The polishing platen 12 is formed in a disk shape, and a polishing cloth 16 is provided on the upper surface thereof. 0
設けられている。 また、 研磨定盤 1 2の下部には、 スピンドル 1 8が連結され、 この スピンドル 1 8はモータ 2 0の図示しない出力軸に連結されている。 前記研磨定盤 1 2は、 モー夕 2 0を駆動することにより矢印 A方向に回転し、 その回転する研磨定盤 1 2の研磨布 1 6上に図示しないノズルからスラリが供給される。 前記保持へッ ド 1 4は、 図示しない昇降装置により上下移動され、 研磨対象のゥヱ一ハを保持へッ ド 1 4にセッ 卜する際に上昇移動される。 また、 保持へッ ド 1 4は、 ゥヱ一ハを研磨する 際に下降移動されてゥヱ一ハを前記研磨布 1 6に押し付ける。 Is provided. Further, a spindle 18 is connected to a lower portion of the polishing table 12, and the spindle 18 is connected to an output shaft (not shown) of the motor 20. The polishing platen 12 rotates in the direction of arrow A by driving the motor 20, and slurry is supplied from a nozzle (not shown) onto the polishing cloth 16 of the rotating polishing platen 12. The holding head 14 is moved up and down by an elevating device (not shown), and is moved up when the polishing object is set on the holding head 14. In addition, the holding head 14 is moved downward when polishing the wafer, and presses the wafer against the polishing cloth 16.
図 1は前記保持へッ ド 1 4の平面図であり、 図 3は図 2の 3— 3線に沿う縦断面図 である。 図 3に示す保持へッ ド 1 4は、 へッ ド本体 2 2、 キャリア 2 4、 ガイ ドリ ン グ 2 6、 研磨面調整リング 2 8、 リテ一ナ一リ ング 3 0、 ゴムシー卜 3 2、 差動トラ ンス 3 4、 及び押付部材 3 6等から構成されている。  FIG. 1 is a plan view of the holding head 14, and FIG. 3 is a longitudinal sectional view taken along line 3-3 in FIG. The holding head 14 shown in Fig. 3 is composed of the head body 22, carrier 24, guide ring 26, polished surface adjustment ring 28, retainer ring 30 and rubber sheet 3 2 , A differential transformer 34, and a pressing member 36.
前記へッ ド本体 2 2は、 円盤状に形成されると共に、 その上面には回転軸 3 8が連 結され、 この回転軸 3 8に連結された図示しないモータによって矢印 B方向に回転さ れる。 また、 へッ ド本体 2 2にはエア供給路 4 0、 4 2、 4 4が形成されている。 前 記エア供給路 4 0は、図 3上二点鎖線で示すように保持へッ ド 1 4の外部に延設され、 レギュレー夕 (R: regulator ) 4 6 Aを介してエアポンプ (A P: air pump) 4 8に 接続される。 また、エア供給路 4 2 . 4 4も同様に保持へッ ド 1 4の外部に延設され、 エア供給路 4 2はレギユレータ 4 6 Bを介してポンプ 4 8に、 そして、 エア供給路 4 4はレギユレータ 4 6 Cを介してポンプ 4 8にそれぞれ接続されている。  The head body 22 is formed in a disk shape, and has a rotating shaft 38 connected to the upper surface thereof, and is rotated in the direction of arrow B by a motor (not shown) connected to the rotating shaft 38. . Further, air supply paths 40, 42, and 44 are formed in the head body 22. The air supply passage 40 extends outside the holding head 14 as shown by a two-dot chain line in FIG. 3, and is supplied through an air pump (AP: air) through a regulator (R) 46 A. pump) 4 8 Similarly, the air supply path 42.44 extends outside the holding head 14, and the air supply path 42 is connected to the pump 48 via the regulator 46B and to the air supply path 4 Numerals 4 are respectively connected to pumps 48 through regulators 46C.
前記キャリア 2 4は、 略円柱状に形成されてへッ ド本体 2 2の下部にへッ ド本体 1 2と同軸上に配置されている。 また、 キャリア 2 4の下面には凹部 2 5が形成され、 この凹部 2 5に通気性を有する多孔質板 5 0が収納されている。 多孔質板 5 0には、 キャリア 2 4に形成されたエア路 5 2 . 5 2が連通されており、これらのエア路 5 、 5 2は、 図中二点鎖線で示すように保持へッ ド 1 4の外部に延設されて、 サクシヨン ポンプ ( S P: suction pump) 7 6に接続されている。 したがって、前記サクションポ ンプ 7 6を駆動すると、 ゥエーハ 5 4が多孔質板 5 0に吸引されて多孔質板 5 0に吸 着保持される。 なお、前記多孔質板 5 0は、内部に多数の通気路を有するものであり、 訂正された用紙 (規則 91) 例えば、 セラミック材料の焼結体よりなるものが用いられている。 The carrier 24 is formed in a substantially cylindrical shape, and is arranged below the head body 22 coaxially with the head body 12. In addition, a concave portion 25 is formed on the lower surface of the carrier 24, and a porous plate 50 having air permeability is accommodated in the concave portion 25. Air passages 52.5.2 formed in the carrier 24 are communicated with the porous plate 50, and these air passages 5 and 52 are held as shown by a two-dot chain line in the figure. It extends outside of the port 14 and is connected to a suction pump (SP) 76. Therefore, when the suction pump 76 is driven, the wafer 54 is sucked by the porous plate 50 and held by the porous plate 50. The porous plate 50 has a large number of air passages inside, and the corrected paper (Rule 91) For example, a material made of a sintered body of a ceramic material is used.
前記キャリア 2 4には、 キャリア 2 4の下面外周部に噴出口が形成された多数のェ ァ供給路 7 8、 7 8 ··· (図 3では 2力所のみ図示) が形成されている。 このエア供給 路 7 8、 7 8…は、 図中二点鎖線で示すように保持へッ ド 1 4の外部に延設され、 レ ギユレ一夕 4 6 Dを介してエアポンプ 4 8に接続されている。 したがって、 エアポン プ 4 8からの圧縮エアは、 エア供給路 7 8、 7 8…を介して多孔質板 5 0とゥヱ一八 5 4との間の空気室 5 6に噴き出される。 これにより、 空気室 5 6には圧力エア層が 形成され、 キャリア 2 4の押圧力がこの圧力エア層を介してゥヱ一八 5 4に伝達され る。 ゥエーハ 5 4は、 前記圧力エア層を介して伝達される前記押圧力によって研磨布 1 6に押し付けられる。 なお、 エア供給路 7 8、 7 8…から噴き出されたエアは、 研 磨面調整リング 2 8に形成された図示しない排気孔から外部に排気される。  The carrier 24 is provided with a number of air supply paths 78, 78, each having an ejection port formed on the outer peripheral portion of the lower surface of the carrier 24 (only two force points are shown in FIG. 3). . The air supply passages 78, 78 ... extend outside the holding head 14 as shown by a two-dot chain line in the figure, and are connected to the air pump 48 via a regulator 46D. ing. Therefore, the compressed air from the air pump 48 is blown out to the air chamber 56 between the porous plate 50 and the porcelain plate 54 through the air supply paths 78, 78. As a result, a pressure air layer is formed in the air chamber 56, and the pressing force of the carrier 24 is transmitted to the carrier 54 through the pressure air layer. The wafer 54 is pressed against the polishing pad 16 by the pressing force transmitted through the pressure air layer. The air blown out from the air supply paths 78, 78,... Is exhausted to the outside through an exhaust hole (not shown) formed in the polishing surface adjustment ring 28.
一方、 へッ ド本体 2 2とキャリア 2 4との間には、 1枚のゴムシート 3 2が配置さ れている。 このゴムシート 3 2は、 均一な厚さで円盤状に形成される。 また、 ゴムシ ート 3 2は、 大小 2つの環状の止め金 5 8、 6 0によってへッ ド本体 2 の下面に固 定されている。 これにより、 ゴムシート 3 2は、 止め金 6 0を境として中央部 3 2 A と中間部 3 2 Bとに 2分され、 また、 止め金 5 8を境として中間部 3 2 Bと外周部 3 2 Cとに 2分されている。 即ち、 ゴムシ一卜 3 2は、 止め金 5 8、 6 0によって 3分 され、 その中央部 3 2 Aはキャリア 2 4を押圧し、 中間部 3 2 Bは押付部材 3 6を押 圧し、 外周部 3 2 Cは研磨面調整リング 2 8を押圧するためのエアーバックとして機 能する。  On the other hand, one rubber sheet 32 is arranged between the head body 22 and the carrier 24. This rubber sheet 32 is formed in a disk shape with a uniform thickness. The rubber sheet 32 is fixed to the lower surface of the head body 2 by two large and small annular stoppers 58, 60. As a result, the rubber sheet 32 is divided into a center part 32 A and a middle part 32 B with the clasp 60 as a boundary, and the middle part 32 B and a peripheral part with the clasp 58 as a boundary. There are 2 divided into 3 2 C. That is, the rubber sheet 32 is divided into three parts by the stoppers 58, 60, and the central part 32A presses the carrier 24, the intermediate part 32B presses the pressing member 36, and the outer periphery. The part 32C functions as an air bag for pressing the polishing surface adjustment ring 28.
前記エア一バックのうち、 ゴムシート 3 2の中央部 3 2 Aで画成されるエアーバッ ク 6 2には、 前記エア供給路 4 0が連通されている。 したがって、 エア供給路 4 0か らエアーバック 6 2に圧縮エアを供給すると、 ゴムシート 3 2の中央部 3 2 Aがエア 圧で弾性変形されてキャリア 2 4の上面を押圧する。 これにより、 研磨布 1 6に対す るゥヱーハ 5 4の押し付け力を得ることができる。 また、 エア圧をレギユレ一タ 4 6 Aで調整すれば、 ゥエーハ 5 4の押し付け力 (研磨圧力) を制御することができる。 前記ガイ ドリング 2 6は、 円筒状に形成されてへッ ド本体 2 2の下部にへッ ド本体 訂正された用紙 (規則 91 ) 2 2と同軸上に配置される。 また、 ガイ ドリング 2 6は、 ゴムシート 3 2を介してへ ッ ド本体 2 2に固定されている。 ガイ ドリング 2 6とキャリア 2 4との間には、 研磨 面調整リング 2 8が配置されている。 The air supply path 40 communicates with an air bag 62 defined by a central portion 32 A of the rubber sheet 32 among the air bags. Therefore, when compressed air is supplied from the air supply path 40 to the airbag 62, the central portion 32A of the rubber sheet 32 is elastically deformed by air pressure and presses the upper surface of the carrier 24. Thereby, a pressing force of the wafer 54 against the polishing pad 16 can be obtained. Also, by adjusting the air pressure with the regulator 46 A, the pressing force (polishing pressure) of the wafer 54 can be controlled. The guide ring 26 is formed in a cylindrical shape and is provided at the lower part of the head body 22 in a corrected form (Rule 91). 22 Coaxially arranged with 2. The guide ring 26 is fixed to the head body 22 via a rubber sheet 32. A polished surface adjustment ring 28 is arranged between the guide ring 26 and the carrier 24.
前記研磨面調整リング 2 8の上方には、 ゴムシート 3 2の外周部 3 2 Cと止め金 5 8とによって画成される環状のエア一バック 6 4が形成される。 このエア一バック 6 4に、 前記エア供給路 4 4が連通されている。 したがって、 エア供給路 4 4からエア ーバック 6 4に圧縮エアを供給すると、 ゴムシ一ト 3 2の外周部 3 2 Cがエア圧で弾 性変形されて研磨面調整リング 2 8の環状上面 2 8 Aを押圧し、 研磨面調整リング 8の環状下面 2 8 Bが研磨布 1 6に押し付けられる。 なお、 研磨面調整リング 2 8の 押し付け力は、 レギユレ一夕 4 6 Cでエア圧を調整することにより制御することがで きる。  Above the polishing surface adjusting ring 28, an annular air bag 64 defined by an outer peripheral portion 32C of the rubber sheet 32 and a stopper 58 is formed. The air supply path 44 is communicated with the air bag 64. Therefore, when compressed air is supplied from the air supply path 44 to the airbag 64, the outer peripheral portion 32C of the rubber sheet 32 is elastically deformed by air pressure, and the annular upper surface 28 of the polishing surface adjusting ring 28 is formed. A is pressed, and the annular lower surface 28 B of the polishing surface adjusting ring 8 is pressed against the polishing cloth 16. The pressing force of the polished surface adjustment ring 28 can be controlled by adjusting the air pressure with a regulator at 46 C overnight.
前記キャリア 2 と研磨面調整リング 2 8との間には押付部材 3 6が配置されてい る。 この押付部材 3 6は本体 3 6 A、 へッ ド 3 6 B、 支持アーム 3 6 C、 3 6 C、 及 び脚部 3 6 D、 3 6 Dから構成されている。 なお、 押付部材 3 6のへッ ド 3 6 B、 支 持アーム 3 6 C、 及び脚部 3 6 Dは図 2上で点線で示すように、 それぞれ 3本ずつ等 間隔で形成されている。  A pressing member 36 is disposed between the carrier 2 and the polishing surface adjusting ring 28. The pressing member 36 is composed of a main body 36A, a head 36B, support arms 36C and 36C, and legs 36D and 36D. The head 36B, the supporting arm 36C, and the leg 36D of the pressing member 36 are formed at regular intervals of three as shown by dotted lines in FIG.
図 3に示す前記押付部材 3 6の本体 3 6 Aは、 研磨面調整リング 1 8に形成された 開口部 2 9内に配置されている。 また、 押付部材 3 6の前記へッ ド 3 6 Bは、 本体 3 6 Aと一体に形成されると共に、 キャリア 2 4と研磨面調整リング 2 8との間に隙間 に配置されている。  The main body 36 A of the pressing member 36 shown in FIG. 3 is disposed in an opening 29 formed in the polishing surface adjusting ring 18. The head 36 B of the pressing member 36 is formed integrally with the main body 36 A, and is arranged in a gap between the carrier 24 and the polishing surface adjusting ring 28.
前記へッ ド 3 6 Bの上方には、 ゴムシート 3 2の中間部 3 2 Bと止め金 5 8、 6 0 とによって画成される環状のエアーバック 6 6が形成される。 このエアーバック 6 6 に、 前記エア供給路 4 2が連通されている。 したがって、 エア供給路 4 2からエア一 バック 6 6に圧縮エアを供給すると、 ゴムシート 3 2の中間部 3 2 Bがエア圧で弾性 変形されて押付部材 3 6のへッ ド 3 6 Bを押圧する。 これにより、 押付部材 3 6の脚 部 3 6 Dの下面 3 7が研磨布 1 6に押し付けられる。 なお、 押付部材 3 6の押し付け 力は、 レギユレ一夕 4 6 Bでエア圧を調整することにより制御することができる。 ま た、 前記脚部 3 6 Dは、 研磨面調整リング 2 8に形成された貫通孔 2 8 Cに配置され ている。 更に、 押付部材 3 8は、 研磨加工熱による熱膨張を防止するために、 熱膨張 率が極小さいアンバーを母材として形成され、 そして、 研磨布 1 6に押圧される前記 下面 3 7は、研磨布 1 6に研磨されないようにダイヤモンドコーティングされている。 一方、 前記押付部材 3 6の支持アーム 3 6 Cの先端部には、 ゥエーハ 5 4の研磨量 を検出する差動トランス 3 4が設けられている。 この差動トランス 3 4は、コア 7 0 、 ボビン 7 2、 及び接触子 7 4から構成されると共に、 前記ボビン 7 2は、 押付部材 3 6の支持アーム 3 6 Cの先端部に固定され、 このボビン 7 2内に前記コア 7 0が上下 移動自在に配置されている。 また、前記コア 7 0の下部に前記接触子 7 4が設けられ、 この接触子 7 4はキャリア 2 4に接触されている。 また、 前記ボビン 7 2には、 図示 しない演算装置が接続されており、 この演算装置は、 ボビン 7 2に対するコア 7 0の 上下移動量に基づいてゥニー八 5 4の研磨量を演算する。 Above the head 36B, an annular airbag 66 defined by an intermediate portion 32B of the rubber sheet 32 and stoppers 58, 60 is formed. The air supply path 42 is connected to the air bag 66. Therefore, when compressed air is supplied from the air supply passage 42 to the air bag 66, the intermediate portion 32B of the rubber sheet 32 is elastically deformed by air pressure, and the head 36B of the pressing member 36 is compressed. Press. As a result, the lower surface 37 of the leg 36D of the pressing member 36 is pressed against the polishing pad 16. In addition, the pressing force of the pressing member 36 can be controlled by adjusting the air pressure with a regulator 46B. Ma The leg 36D is disposed in a through hole 28C formed in the polished surface adjustment ring 28. Further, the pressing member 38 is formed using an amber having a very small coefficient of thermal expansion as a base material in order to prevent thermal expansion due to polishing processing heat, and the lower surface 37 pressed against the polishing cloth 16 is Abrasive cloth 16 is coated with diamond so as not to be polished. On the other hand, a differential transformer 34 for detecting the amount of polishing of the wafer 54 is provided at the tip of the support arm 36 C of the pressing member 36. The differential transformer 34 includes a core 70, a bobbin 72, and a contact 74, and the bobbin 72 is fixed to a distal end portion of a support arm 36 C of a pressing member 36, The core 70 is vertically movably arranged in the bobbin 72. The contact 74 is provided below the core 70, and the contact 74 is in contact with the carrier 24. An arithmetic unit (not shown) is connected to the bobbin 72, and the arithmetic unit calculates the amount of polishing of the penny 54 based on the amount of vertical movement of the core 70 with respect to the bobbin 72.
ところで、 キャリア 2 4の下部外周部には、 リテーナリング 3 0が上下移動可能に 嵌入されている。 前記リテ一ナリング 3 0は、 ゥェ一ハ 5 4の研磨中において研磨布 1 6に接触される。 そして、 前記ゥヱーハ 5 4は、 研磨布 1 6の回転力で横方向に移 動してリテーナリング 3 0の内周面に当接され、 これによつて、 キャリア 2 4からの ゥェ一ハ 5 4の飛び出しがリテ一ナリング 3 0によって阻止されている。  By the way, a retainer ring 30 is vertically movably fitted into the outer periphery of the lower part of the carrier 24. The retainer ring 30 is brought into contact with the polishing pad 16 during polishing of the wafer 54. Then, the wafer 54 is moved laterally by the rotational force of the polishing pad 16 and abuts on the inner peripheral surface of the retainer ring 30, whereby the wafer from the carrier 24 is moved. The jumping out of 5 4 is blocked by the retaining ring 30.
また、 前記リテ一ナリング 3 0は樹脂製なので、 図 4に示すようにゥェ一ハ 5 4の 周縁 5 4 Aの横方向からの当接によるゥヱーハ 5 4からの押圧力 Pによって、 図中二 点鎖線で示す元の形状から変形し、 ゥエーハ 5 4の周縁 5 4 Aの形状に沿った形状に 弾性変形する。 したがって、 前記ゥエーハ 5 4は、 リテーナリング 3 0と角度 Θの範 囲で面接触した状態でリテ一ナリング 3 0に押し付けられる。 なお、 前記押圧力 Pで 弾性変形するものであれば、 樹脂製に限らず金属製のリテーナリングを適用しても良 い。  In addition, since the retainer ring 30 is made of resin, as shown in FIG. 4, a pressing force P from the wafer 54 due to the lateral contact of the peripheral edge 54 A of the wafer 54 as shown in FIG. Deforms from the original shape indicated by the two-dot chain line, and elastically deforms into a shape along the shape of the periphery 54 A of the wafer 54. Therefore, the wafer 54 is pressed against the retainer ring 30 in a state of surface contact with the retainer ring 30 within a range of the angle Θ. In addition, as long as it is elastically deformed by the pressing force P, not only resin but also metal retainer rings may be applied.
次に、 前記の如く構成されたゥユーハ研磨装置 1 0の作用いついて説明する。 ま ず、 保持へッ ド 1 4を上昇させた後、 サクションポンプ 7 6を駆動して研磨対象のゥ ニーハ 5 4を多孔質板 5 0に吸着保持させる。 次に、 保持へッ ド 1 4を下降させて、 保持へッ ド 1 4の研磨面調整リング 2 8の接 触面が研磨布 1 6に当接した位置で下降移動を 止する。 そして、 サクシヨンポンプ 7 6を停止して前記ゥヱ一八 5 4の吸着を解除し、 ゥヱ一ハ 5 4を研磨布 1 6上に載 置する。 Next, the operation of the wafer polishing apparatus 10 configured as described above will be described. First, after raising the holding head 14, the suction pump 76 is driven to adsorb and hold the wafer 54 to be polished on the porous plate 50. Next, the holding head 14 is lowered, and the lowering movement is stopped at a position where the contact surface of the polishing surface adjusting ring 28 of the holding head 14 comes into contact with the polishing pad 16. Then, the suction pump 76 is stopped to release the suction of the above-mentioned No. 184, and the No. 154 is placed on the polishing pad 16.
次いで、 エアポンプ 4 8を駆動して圧縮エアをエア路 7 8を介して空間 5 6に供給 し、 空気室 5 6に圧力エア層を形成する。 この時、 レギユレ一タ 4 6 Dを制御するこ とにより圧縮エアの供給量を調整し、 圧力エア層の圧力を所定の圧力に設定する。 次に、 ポンプ 4 8からの圧縮エアを、 エア供給路 4 0を介してエア一バック 6 2に 供給し、 ゴムシート 3 2の中央部 3 2 Aを内部エア圧により弾性変形させてキャリア 2 4を押圧し、 前記圧力エア層を介してゥヱ一八 5 を研磨布 1 6に押し付ける。 そ して、 レギユレ一夕 4 6 Aでエア圧を調整して内部エア圧力を所望の圧力に制御し、 研磨布 1 6に対するゥヱーハ 5 4の押し付け力を一定に保持する。  Next, the air pump 48 is driven to supply the compressed air to the space 56 via the air path 78, and a pressure air layer is formed in the air chamber 56. At this time, by controlling the regulator 46 D, the supply amount of compressed air is adjusted, and the pressure of the pressure air layer is set to a predetermined pressure. Next, the compressed air from the pump 48 is supplied to the air bag 62 through the air supply passage 40, and the center portion 32A of the rubber sheet 32 is elastically deformed by the internal air pressure to make the carrier 2 elastic. 4 is pressed, and 18 5 is pressed against the polishing pad 16 through the pressure air layer. Then, the internal air pressure is adjusted to a desired pressure by adjusting the air pressure with a regulator at 46 A, and the pressing force of the wafer 54 against the polishing pad 16 is kept constant.
そして、 これと同時に、 ポンプ 4 0からの圧縮エアをエア供給路 4 4を介してエア —バック 6 4に供給し、 ゴムシー卜 3 2の外周部 3 2 Cを内部エア圧により弾性変形 させて研磨面調整リング 2 8を押圧し、 研磨面調整リング 2 8とリテーナリング 3 0 の下面を研磨布 1 6に押し付ける。 そして、 ポンプ 4 0からの圧縮エアをエア供給路 4 2を介してエアーバック 6 6に供給し、 ゴムシート 3 2の中間部 3 2 Bを内部エア 圧により弾性変形させて押付部材 3 6を押圧し、 押付部材 3 6の下面 3 7を研磨布 1 6に押し付ける。 この後、 研磨定盤 1 2及び保持へッ ド 1 4を回転させてゥヱーハ 5 4の研磨を開始する。  At the same time, the compressed air from the pump 40 is supplied to the air-back 64 through the air supply path 44, and the outer peripheral portion 32C of the rubber sheet 32 is elastically deformed by the internal air pressure. The polishing surface adjustment ring 28 is pressed, and the lower surfaces of the polishing surface adjustment ring 28 and the retainer ring 30 are pressed against the polishing cloth 16. Then, the compressed air from the pump 40 is supplied to the airbag 66 through the air supply path 42, and the intermediate portion 32B of the rubber sheet 32 is elastically deformed by the internal air pressure to cause the pressing member 36 to deform. Then, the lower surface 37 of the pressing member 36 is pressed against the polishing pad 16. Thereafter, the polishing plate 12 and the holding head 14 are rotated to start polishing the wafer 54.
ゥエーハ 5 4の研磨中において、 ゥヱ一ハ 5 4は研磨布 1 6の回転によって横方向 に移動して、 その周縁がリテ一ナリング 3 0に押し付けられた状態で研磨されるが、 この時、 リテーナリング 3 0は図 4に示したように、 ゥェ一ハ 5 4からの押圧力 Pに よってゥヱーハ 5 4の周縁 5 4 Aの形状に沿った形状に弾性変形する。 これにより、 ゥヱ一八 5 4は、 リテ一ナリング 3 0と面接触した状態でリテ一ナリング 3 0に押し 付けられることになり、 リテ一ナリング 3 0からゥヱ一八にかかる圧力が分散するの で、 ゥヱ一八に割れ欠け等の欠陥は生じない。 一方、 研磨中におけるゥヱ一八 5 4の研磨量は、 差動トランス 3 4の接触子 7 4が キャリア 2 4に接触していることにより、 接触.子 7 4の下降量、 即ち、 コア 7 0の下 降量に基づいて演算装置により算出されている。 During polishing of the wafer 54, the wafer 54 is moved in the lateral direction by the rotation of the polishing cloth 16 and is polished in a state where its periphery is pressed against the retaining ring 30. However, as shown in FIG. 4, the retainer ring 30 is elastically deformed by the pressing force P from the wafer 54 to a shape following the shape of the peripheral edge 54 A of the wafer 54. As a result, the carrier 184 is pressed against the retainer ring 30 in surface contact with the retainer ring 30, and the pressure applied to the retainer ring 30 from the retainer ring 30 is dispersed. Therefore, there are no defects such as cracks and cracks. On the other hand, the polishing amount during polishing is as follows.The contact amount of the contact 74 of the differential transformer 34 is in contact with the carrier 24. It is calculated by the arithmetic unit based on the amount of fall and fall of 70.
そして、前記演算装置で算出された研磨量が、予め設定した研磨加工終点になると、 ゥヱ一ハ研磨装置 1 0を停止して、 ゥヱ一ハ 5 4の研磨を終了する。 これにより、 1 枚のゥヱーハ 5 4の研磨が終了し、 2枚目以降のゥヱ一八 5 4を研磨する場合には、 前述した工程を繰り返せば良い。  Then, when the polishing amount calculated by the arithmetic unit reaches a preset polishing end point, the polishing apparatus 10 is stopped, and the polishing of FIG. 54 ends. Thus, the polishing of one wafer 54 is completed, and the polishing of the second wafer and subsequent wafers 54 may be repeated by repeating the above-described steps.
産業上の利用可能性 Industrial applicability
以上説明したように本発明に係るゥヱ一ハ研磨装置によれば、 ゥエー八の横方向か らの当接によるゥヱ一八の押圧力によって、 リテーナリングがゥヱ一八の周縁の形状 に沿った形状に弾性変形するので、 リテ一ナリングからゥヱ一ハにかかる圧力が分散 し、 ゥヱ一八に割れ欠け等の欠陥は生じない。  As described above, according to the polishing machine according to the present invention, the retainer ring is shaped into the shape of the peripheral edge of 18 by the pressing force of 18 due to the lateral contact of the A8. Since it is elastically deformed into a shape along the shape, the pressure applied to the surface from the retainer is dispersed, and defects such as cracks and chips do not occur in the structure.

Claims

請 求 の 範 囲 The scope of the claims
1 . ゥエーハを保持ヘッ ドに保持し回転する研磨定盤に押し付けて、 ゥエーハを研磨 する研磨装置において、 1. In a polishing machine that polishes the wafer by holding the wafer on the holding head and pressing it against the rotating polishing platen,
前記保持へッ ドは、  The holding head is
回転すると共に前記研磨定盤に対向配置されるへッ ド本体と、  A head body that rotates and is arranged to face the polishing platen;
前記へッ ド本体に上下方向移動自在に支持されたキャリアと、  A carrier supported movably in the vertical direction by the head body;
前記キヤリァの下面に設けられると共に前記ゥェ一ハの裏面に向けてエアを吹き出 すことにより、 キャリアとゥ ーハとの間に圧力流体層を形成するエア吹出部材と、 前記キャリアを前記研磨定盤に向けて押圧することにより、 前記ゥエーハを前記圧 力流体層を介して前記研磨定盤に押し付ける押圧手段と、  An air blowing member provided on the lower surface of the carrier and blowing air toward the back surface of the wafer to form a pressure fluid layer between the carrier and the wafer; Pressing means for pressing the wafer to the polishing platen via the pressure fluid layer by pressing the platen against the platen;
前記キャリァの下部外周部に上下移動可能に嵌入され、 該キャリアからのゥエーハ の飛び出しを防止すると共に、 ゥヱ一八の横方向からの当接によるゥヱ一八の押圧力 でゥヱ一ハの周縁の形状に沿った形状に弾性変形するリングと、  The carrier is vertically movably fitted to the outer periphery of the lower portion of the carrier to prevent the eaves from jumping out of the carrier. A ring that elastically deforms into a shape along the shape of the periphery of
から成ることを特徴とするゥヱーノ、研磨装置。  Pano, a polishing apparatus, comprising:
PCT/JP1999/005291 1998-03-30 1999-09-28 Wafer grinder WO2001023138A1 (en)

Priority Applications (2)

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JP10084115A JP2973403B2 (en) 1998-03-30 1998-03-30 Wafer polishing equipment
PCT/JP1999/005291 WO2001023138A1 (en) 1998-03-30 1999-09-28 Wafer grinder

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10084115A JP2973403B2 (en) 1998-03-30 1998-03-30 Wafer polishing equipment
PCT/JP1999/005291 WO2001023138A1 (en) 1998-03-30 1999-09-28 Wafer grinder

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JP3873557B2 (en) 2000-01-07 2007-01-24 株式会社日立製作所 Manufacturing method of semiconductor device
TWI238754B (en) 2002-11-07 2005-09-01 Ebara Tech Inc Vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof
CN105990163B (en) * 2015-01-30 2019-03-29 中芯国际集成电路制造(上海)有限公司 The bonding method and chemical mechanical planarization method of wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0881039A2 (en) * 1997-05-28 1998-12-02 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus with retainer ring
EP0896858A1 (en) * 1997-08-11 1999-02-17 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0881039A2 (en) * 1997-05-28 1998-12-02 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus with retainer ring
EP0896858A1 (en) * 1997-08-11 1999-02-17 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus

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JP2973403B2 (en) 1999-11-08

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