536448 67 4 6twf·doc/〇 0 6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（I ) 本發明是有關於一種化學機械硏磨（Chemical Mechanical Polishing，CMP)裝置，且特別是有關於一種具 有可局部調整表面高度之化學機械硏磨台。 當前半導體製程爲因應電子產品之工作速度，已進入 至深次微米（Deep Sub-Micron)的製程，而在此製程中，因 微影製程中（Photo Lithography)光學系統的曝光景深（Depth of Focus)愈來愈小，以及多重金屬內連線（Multi-Level Metal Interconnect，MLM)製程堆積的層數愈來愈多，如何在半 導體元件製程中維持良好的晶圓平坦度(Planarization)是一 個重要的課題。 因此，在進入深次微米的半導體製程後，晶圓的平坦 化就依賴化學機械硏磨製程來完成，其主要原因乃是化學 機械硏磨技術提供了晶圓的全面平坦化的效果，也因此化 學機械硏磨技術成了深次微米半導體製程中一個不可或缺 的技術。 請參照第1圖所示，係習知之化學機械硏磨裝置的示 意圖。目前使用之化學機械硏磨機台，其硏磨台100係表 面爲高平坦度的圓柱體，以作爲硏磨墊102進行晶片104 硏磨時之背墊，並利用頂環(Top Ring)106扣住晶片104於 硏磨墊102上表面之一側，再以晶背壓力吹氣（Back Side Pressure，BSP)控制晶片的硏磨速率，進行化學機械硏磨。 在硏磨過程中，晶片104會受到晶背壓力吹氣之影響 而貼著硏磨墊102並受頂環106帶動而旋轉，同時，硏磨 台100會帶著硏磨墊102以相反方向進行旋轉，並利用硏 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 536448 6746twf.doc/006 A7 B7 五、發明說明（λ ) 磨墊102表面上之硏磨劑（未繪示）對晶片104之表面進 行硏磨。 然而，經過多次或長時間的硏磨製程，硏磨墊表面輪 廓（Pad surface profile)會因長時間地硏磨而產生形變或磨 耗，使晶片上各點之硏磨速率不均，亦使晶片上各點最大 硏磨速率與最小硏磨速率之差距增加，而使得硏磨製程中 晶片上各點之硏磨量產生明顯之差異，而易使晶片超出規 格，進而降低產品之良率。 本發明提出一種化學機械硏磨台，利用硏磨台表面之 具有熱脹冷縮之多個金屬環，藉著局部電流之調整’使部 份金屬環因熱脹冷縮而產生形變，以補償硏磨墊表面輪廓 之形變，減少晶片表面各點硏磨速率之差異，並減少晶片 各點之硏磨量不均之現象，可增加硏磨墊使用壽命（Pad life)，及提升產品的良率。 本發明提出一種化學機械硏磨台，係由表面具有多個 同心圓溝渠之圓柱狀轉盤，及配置於轉盤表面之溝渠中之 多個具熱脹冷縮特性之金屬圓環所構成。利用對各金屬圓 環之局部電流調整，調整各金屬圓環之高度，以對硏磨墊 進行局部高度調整，且可藉由控制硏磨墊表面輪廓成特定 分佈，而間接控制硏磨晶片各個區域之硏磨量。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡鼠說_ 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------_ 訂------- ·線 (請先閱讀背面之注咅？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 536448 67 4 6twf. do c/Ο Ο 6 A7 _B7_ 五、發明說明（> ) 第1圖所示爲習知之化學機械硏磨裝置的示意圖。 第2A圖所示爲本發明之一較佳實施例之化學機械硏 磨台的示意圖。 第2B圖所示爲本發明之一較佳實施例之化學機械硏 磨台的俯視圖。 第2C圖所示爲本發明之一較佳實施例之化學機械硏 磨台之金屬圓環的局部放大圖。 第2D圖所示爲本發明之一較佳實施例之具有金屬圓 環之化學機械硏磨台的局部俯視圖。 第3圖所示爲本發明之一較佳實施例之化學機械硏磨 台的調整示意圖。 圖式之標記說明= 100 :化學機械硏磨台 102，203，306 ··化學機械硏磨墊 104 :晶片 106 :頂環 200，300 :轉盤 202，302 :金屬圓環 204，304 :同心圓溝渠 206 :電阻 208 :絕緣層 210 :外接電源 212 :電源線路 214 :間隙 5 本^氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 536448 6746twf.d〇c/006 pj ---------B7__________ 五、發明說明（+) 310 :硏磨墊表面輪廓偵測器 312 :資料處理器 314 :溫度控制器 實施例 第2A圖所示爲本發明之一較佳實施例之化學機械硏 磨台的示意圖。第2B圖所示爲本發明之一較佳實施例之 具有金屬圓環之化學機械硏磨台的局部俯視圖。第2C圖 所示爲本發明之一較佳實施例之化學機械硏磨台之金屬圓 環的局部放大圖。第2D圖所示爲本發明之一較佳實施例 之具有金屬圓環之化學機械硏磨台的局部俯視圖。請參照 第2A圖所示，本發明提出之化學機械硏磨台係由表面具 有多個同心圓溝渠204之轉盤200，與配置於每一個同心 圚溝渠204中之金屬圓環202所構成。化學機械硏磨墊203 直接貼附於轉盤200之上。 接著，轉盤200係在表面具有高平坦度的金屬圓柱體 上，利用車床依據一定之間隔，在金屬圓柱體之表面車出 多道同心圓溝渠204 (請參照第2B圖所示）所形成，其中 同心圓溝渠204之中心點係爲轉盤200之中心點，轉盤200 係由不銹鋼所製成。 接著，請參照第2C圖所示，金屬圓環202係具有良 熱脹冷縮之材料，例如是不錄鋼或金屬銅所製成。在金屬 圓環202之內部具有電阻206,且在金屬圓環202與電阻206 之間形成有絕緣層208，以防止電阻206上之電流外流至 金屬圓環202中，其中絕緣層208之材質例如是石棉。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂--------線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 536448 6746twf.d〇c/006 A7 B7 五、發明說明（y) 另外，電阻206上利用電源線路212與外接電源210 連接，以藉由外接電源210所提供之電流變化調整電阻206 之溫度，使各別的金屬圓環202受內部溫度之變化而產生 熱脹冷縮之形變，每一個金屬圓環202在高度方向的熱脹 冷縮量變化範圍約介於0.1//m至10//m之間。 接著，請參照第2D圖所示，金屬圓環202之兩端並 未接合於一起，兩端之間存在有間隙214，用以提供金屬 圓環202熱脹冷縮時所需之長度方向的變形空間，且間隙 214亦可以作爲電源線路212與金屬圓環內之電阻相連接 之用。 另外，每一個金屬圓環202可由多個略成弧形之金屬 管，依據一定之間隙排列配置於同心圓溝渠204中。可藉 由電流變化而使金屬圓環202之各段個別進行局部調整。 又，金屬圓環202之截面形狀可以爲任何形狀，例如爲圓 形或矩形。且金屬圓環202之截面寬度略小於同心圓溝渠 204之寬度，用以提供金屬圓每202受熱膨膜時之寬度形 變空間。接著，將金屬圓環202之一置於同心圓溝渠204 之一之中。 習知之化學機械硏磨台僅僅是提供一高平坦度的平 面，以作爲化學機械硏磨墊之背墊，然而，本發明之硏磨 台則爲表面具有多個同心圓溝渠204之轉盤200與配置於 每一同心圓溝渠204中之具熱脹冷縮之金屬圓環202所構 成，藉著局部電流之調整，使部份金屬圓環202受熱膨脹 或受冷收縮，以補償硏磨墊203表面輪廓之形變，減少晶 7 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 536448 6746twf. doc/ 006 A7 B7 五、發明說明（6) 片表面各點硏磨速率之差異，並減少晶片各點之硏磨量不 均之現象。另外也可以對硏磨墊203進行局部高度調整， 以藉由控制硏磨墊203表面輪廓成特定分佈，而間接控制 硏磨晶片各個區域之硏磨量。 接著，請參照第3圖所示，爲本發明之一較佳實施例 之化學機械硏磨裝置的調整示意圖。提供一表面具有多個 同心圓溝渠304之轉盤300,且每一個同心圓溝渠3〇4中 配置有金屬圓環302。接著，去除部份晶片之厚度，且同 時進行調整製程以改變金屬圓Ϊ哀302之局度。調整製程例 如在進行化學機械硏磨製程的過程中，利用硏磨塾表面輪 廓偵測器310於晶片硏磨的過程中，對硏磨墊306表面輪 廓進行偵測，並將偵測之結果傳送至資料處理器312。接 著，利用資料處理器312將硏磨墊306表面輪廓之資料進 行分析，並視需要計算出應有的溫度調整値，及對應之各 金屬圓環302電流調整値，再將此溫度與電流調整値傳送 至溫度控制器314。之後，改變各金屬圓環302之電流量， 以對轉盤300上之溝渠304中的各金屬圓環302進行個別 調溫之動作，使金屬圓環302產生高度形變，以補償硏磨 墊306表面輪廓之形變，減少晶片表面各部份硏磨量不均 之現象並增加硏磨墊306之使用壽命。 接著，重複進行前述之調整製程以隨時監控硏磨墊306 之表面輪廓形變，重複調整製程之時間係爲不間斷或是間 隔一固定時間進行一次，以確保晶片上各點之硏磨速率均 勻，而減少硏磨製程中晶片上各點之硏磨量差異’而使晶 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱Γ (請先閱讀背面之注意事項再填寫本頁) 訂--------線· 經濟部智慧財產局員工消費合作社印製 A7 536448 6746twf.doc/006 ____B7_ 五、發明說明（q) 片不易超出規格，進而提升產品之良率。 另外，藉由改變各金屬圓環302之電流量，可以控制 硏磨墊各點表面輪廓成特定分佈，而間接控制硏磨晶片各 個區域之硏磨量。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 適 度 尺 張 紙 本 π 9 2 X 210 /V 格 規 4 )Α S) Ν (C 準 標536448 67 4 6twf · doc / 〇0 6 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (I) The present invention relates to a chemical mechanical polishing (CMP) device, and is particularly The invention relates to a chemical mechanical honing table with locally adjustable surface height. The current semiconductor manufacturing process has entered the Deep Sub-Micron process in response to the operating speed of electronic products. In this process, the exposure depth of the optical system during Photo Lithography (Depth of Focus) ) Is getting smaller and smaller, and the number of layers stacked in the Multi-Level Metal Interconnect (MLM) process is increasing, how to maintain good wafer flatness (Planarization) in the semiconductor device process is an important Subject. Therefore, after entering the deep sub-micron semiconductor process, the planarization of the wafer depends on the chemical mechanical honing process. The main reason is that the chemical mechanical honing technology provides the overall planarization effect of the wafer, and therefore Chemical mechanical honing technology has become an indispensable technology in deep sub-micron semiconductor processes. Please refer to Fig. 1 for a schematic view of a conventional chemical mechanical honing device. The currently used chemical mechanical honing machine table, the honing table 100 is a cylinder with a high flatness on the surface, which is used as the backing pad for the wafer 104 when the honing pad 102 is honing, and the top ring 106 is used. The wafer 104 is held on one side of the upper surface of the honing pad 102, and then the wafer honing rate is controlled by back side pressure (BSP) to perform chemical mechanical honing. During the honing process, the wafer 104 will be affected by the back pressure of the wafer and will contact the honing pad 102 and be driven by the top ring 106 to rotate. At the same time, the honing table 100 will carry the honing pad 102 in the opposite direction. Rotate and use 硏 3 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------------- Order ---- ----- Line (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536448 6746twf.doc / 006 A7 B7 V. Description of the invention (λ) A honing agent (not shown) hones the surface of the wafer 104. However, after multiple or long honing processes, the pad surface profile will be deformed or worn due to long honing, making the honing rate of each point on the wafer uneven and causing The difference between the maximum honing rate and the minimum honing rate of each point on the wafer increases, which makes the honing amount of each point on the wafer during the honing process significantly different, which easily causes the wafer to exceed the specification, thereby reducing the yield of the product. The invention proposes a chemical mechanical honing table, which uses a plurality of metal rings with thermal expansion and contraction on the surface of the honing table, and through the adjustment of local current, part of the metal rings are deformed due to thermal expansion and contraction to compensate. The deformation of the surface of the honing pad reduces the difference in the honing rate of each point on the wafer surface, and reduces the unevenness of the honing amount at each point of the wafer, which can increase the pad life and improve the quality of the product. rate. The invention proposes a chemical mechanical honing table, which is composed of a cylindrical turntable having a plurality of concentric circular grooves on the surface, and a plurality of metal rings with thermal expansion and contraction characteristics arranged in the grooves on the surface of the turntable. The local current adjustment of each metal ring is used to adjust the height of each metal ring to adjust the height of the honing pad locally, and the honing pad surface can be controlled to a specific distribution, and each of the honing wafers can be controlled indirectly. Area of honing. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -------------------_ Order ------- · Line (Please Read the note on the back? Matters before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 536 448 67 4 6twf. Do c / Ο Ο 6 A7 _B7_ V. Description of the invention (>) Figure 1 shows Schematic diagram of a conventional chemical mechanical honing device. FIG. 2A is a schematic diagram of a chemical mechanical honing table according to a preferred embodiment of the present invention. FIG. 2B is a top view of a chemical mechanical honing table according to a preferred embodiment of the present invention. FIG. 2C is a partial enlarged view of a metal ring of a chemical mechanical honing table of a preferred embodiment of the present invention. Figure 2D is a partial plan view of a chemical mechanical honing table with a metal ring in a preferred embodiment of the present invention. FIG. 3 is a schematic diagram of adjusting a chemical mechanical honing table according to a preferred embodiment of the present invention. Explanation of the marks in the drawing = 100: chemical mechanical honing table 102, 203, 306 · chemical mechanical honing pad 104: wafer 106: top ring 200, 300: turntable 202, 302: metal ring 204, 304: concentric circles Ditch 206: Resistor 208: Insulation layer 210: External power supply 212: Power supply line 214: Gap 5 This standard is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) --------- ----------- Order --------- line (please read the notes on the back before filling this page) 536448 6746twf.d〇c / 006 pj ------ --- B7__________ V. Description of the invention (+) 310: honing pad surface profile detector 312: data processor 314: temperature controller embodiment FIG. 2A shows a chemical machine as a preferred embodiment of the present invention Schematic diagram of the honing table. FIG. 2B is a partial top view of a chemical mechanical honing table with a metal ring according to a preferred embodiment of the present invention. Figure 2C is a partial enlarged view of a metal ring of a chemical mechanical honing table according to a preferred embodiment of the present invention. Figure 2D is a partial plan view of a chemical mechanical honing table with a metal ring according to a preferred embodiment of the present invention. Referring to FIG. 2A, the chemical mechanical honing table proposed by the present invention is composed of a turntable 200 having a plurality of concentric circular trenches 204 on the surface, and a metal ring 202 disposed in each of the concentric trenches 204. The chemical mechanical honing pad 203 is directly attached to the turntable 200. Next, the turntable 200 is formed on a metal cylinder having a high flatness on the surface, and a plurality of concentric circular trenches 204 are formed on the surface of the metal cylinder using a lathe at a certain interval (see FIG. 2B). The center point of the concentric circular trench 204 is the center point of the turntable 200, and the turntable 200 is made of stainless steel. Next, referring to FIG. 2C, the metal ring 202 is a material with good thermal expansion and contraction, such as made of non-recorded steel or metallic copper. There is a resistor 206 inside the metal ring 202, and an insulating layer 208 is formed between the metal ring 202 and the resistor 206 to prevent the current on the resistor 206 from flowing out into the metal ring 202. The material of the insulating layer 208 is, for example, It's asbestos. 6 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative, printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative, 536448 6746twf.doc / 006 A7 B7 V. Description of the invention (y) In addition, the resistor 206 is connected to the external power supply 210 by a power line 212, so as to The current change provided by the power supply 210 adjusts the temperature of the resistor 206, so that the respective metal rings 202 are deformed by thermal expansion and contraction due to changes in the internal temperature. The thermal expansion and contraction of each metal ring 202 in the height direction The variation range is between 0.1 // m and 10 // m. Next, as shown in FIG. 2D, the two ends of the metal ring 202 are not joined together, and there is a gap 214 between the two ends to provide the length of the metal ring 202 required for thermal expansion and contraction. The deformation space, and the gap 214 can also be used to connect the power line 212 with the resistance in the metal ring. In addition, each metal ring 202 may be formed by a plurality of slightly arc-shaped metal tubes arranged in a concentric circular trench 204 according to a certain gap. The individual sections of the metal ring 202 can be individually adjusted by changing the current. The cross-sectional shape of the metal ring 202 may be any shape, such as a circle or a rectangle. In addition, the cross-section width of the metal ring 202 is slightly smaller than the width of the concentric circular trenches 204 to provide a space for the width of the metal circle to change when the film is heated and expanded. Next, one of the metal rings 202 is placed in one of the concentric circular trenches 204. The conventional chemical mechanical honing table only provides a flat surface as a backing pad of the chemical mechanical honing pad. However, the honing table of the present invention is a rotary table 200 having a plurality of concentric circular grooves 204 on the surface. The metal ring 202 with thermal expansion and contraction arranged in each concentric circular trench 204 is formed. By adjusting the local current, part of the metal ring 202 is expanded or contracted by heat to compensate the honing pad 203 Deformation of the surface contour to reduce crystal size 7 ^ Paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) -------------------- Order- ------- Line (Please read the precautions on the back before filling this page) 536448 6746twf.doc / 006 A7 B7 V. Description of the invention (6) The difference in the honing rate of each point on the surface of the wafer, and reducing the wafer The phenomenon of uneven honing of dots. In addition, the height of the honing pad 203 can also be adjusted locally to control the honing pad 203 surface profile to a specific distribution, and indirectly control the honing amount of each area of the honing wafer. Next, please refer to FIG. 3, which is a schematic diagram of adjusting a chemical mechanical honing apparatus according to a preferred embodiment of the present invention. A turntable 300 having a plurality of concentric circular trenches 304 on the surface is provided, and a metal ring 302 is arranged in each of the concentric circular trenches 304. Then, the thickness of some wafers is removed, and at the same time, the adjustment process is performed to change the degree of the metal circle 302. During the adjustment process, for example, during the chemical mechanical honing process, the honing honing surface profile detector 310 is used to detect the surface contour of the honing pad 306 during the wafer honing process, and the detection result is transmitted. To the data processor 312. Next, the data processor 312 is used to analyze the data of the surface profile of the honing pad 306, and calculate the necessary temperature adjustment 视, and the corresponding current adjustment 値 of each metal ring 302, and then adjust the temperature and current.値 is transmitted to the temperature controller 314. After that, the current amount of each metal ring 302 is changed to individually adjust the temperature of each metal ring 302 in the trench 304 on the turntable 300, so that the metal ring 302 is highly deformed to compensate the surface of the honing pad 306. The deformation of the contour reduces the unevenness of the honing amount of each part of the wafer surface and increases the service life of the honing pad 306. Then, the aforementioned adjustment process is repeated to monitor the surface contour deformation of the honing pad 306 at any time. The repeated adjustment process is performed uninterrupted or at a fixed time interval to ensure that the honing rate of each point on the wafer is uniform. And reduce the difference in honing amount of each point on the wafer during the honing process, so that the crystal size of this paper is applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) (Please read the precautions on the back before filling this Page) Order -------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 536448 6746twf.doc / 006 ____B7_ V. Description of the Invention (q) It is not easy to exceed the specifications of the film, thereby improving the yield of the product. In addition, by changing the amount of current of each metal ring 302, the surface profile of each point of the honing pad can be controlled to a specific distribution, and the honing amount of each region of the honing wafer can be controlled indirectly. Although the present invention has been described in a preferred embodiment, The disclosure is as above, but it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application. (Please read the notes on the back before filling out this page.) The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a moderate rule of paper π 9 2 X 210 / V 4) Α S) Ν (C standard