JP2008302464A - Polishing device and manufacturing method of semiconductor device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device high in uniformity of a polishing profile and a manufacturing method of a semiconductor device using it. <P>SOLUTION: This polishing device polishes a surface of a wafer SB by relatively moving the wafer SB and abrasive cloth CL while pressing the surface of the wafer SB on the abrasive cloth CL. This polishing device is furnished with a wafer pressurizing part WP, and first and second retainer rings RR1, RR2. The wafer pressurizing part WP presses the surface of the wafer WP on the abrasive cloth CL by applying pressure on the back surface side of the wafer WP. The first retainer ring RR1 is arranged on the outer peripheral side of the wafer SB and presses the abrasive cloth CL. The second retainer ring RR2 is arranged on the outer peripheral side of the first retainer ring RR1 and has constitution for controlling pressure independently from the first retainer ring RR1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a polishing apparatus and a method of manufacturing a semiconductor device using the same, and more particularly to a polishing apparatus that polishes the surface of a substrate by moving the substrate and the polishing cloth relative to each other while pressing the surface of the substrate against the polishing cloth. The present invention relates to a method of manufacturing a semiconductor device using

  In a manufacturing process of a semiconductor device or the like, polishing by a CMP (Chemical Mechanical Polishing) technique for smoothing or flattening a wafer surface is widely performed. In order to effectively use the wafer, it is necessary to uniformly polish a wide area in the wafer surface including the vicinity of the edge portion of the wafer by this polishing apparatus.

  A polishing apparatus for CMP usually has a retainer ring at a position surrounding the wafer. Retainer ring not only functions to prevent the wafer from being detached from the polishing head during polishing, but also applies polishing cloth around the wafer to prevent over-polishing (friction) of the wafer edge to ensure uniform polishing. It also has a function to increase However, in order to effectively use the wafer described above, it is required to polish the wafer more uniformly in the vicinity of the wafer edge portion.

In recent years, in order to adjust the polishing profile in the vicinity of the wafer edge portion, a dedicated mechanism for pressurizing the wafer outer peripheral portion has been proposed. For example, according to Japanese Patent Publication No. 2003-528738, a carrier head (polishing head) that pressurizes a wafer has a plurality of chambers. Each chamber is pressurized to improve the polishing profile.
Special table 2003-528738 gazette

  When the polishing cloth is pressurized by the retainer ring, the polishing cloth rebounds (swells) at the outer peripheral portion of the wafer, and uneven polishing occurs. The position where rebound occurs depends on the pressure of the retainer ring. When the pressure is increased, the wafer moves toward the inner periphery of the wafer, and when the pressure is decreased, it moves toward the outer periphery. Therefore, when the pressure of the retainer ring is high, there is a problem that the diameter of the region where uniform polishing is performed becomes small.

  Conversely, when the pressure of the retainer ring is low, the action of suppressing the fluff of the polishing cloth by the retainer ring is reduced, and the fluff of the polishing cloth is increased. As a result, the dishing or recess of the polished surface is increased. That is, there is a problem that uniform smoothing / flattening cannot be performed. Further, as a result of less heat generation due to friction between the retainer ring and the polishing pad, the polishing action due to the chemical reaction is lowered. In particular, the CMP of a metal film has a problem that the polishing rate is greatly reduced because the polishing action by a chemical reaction is mainly used.

  On the other hand, a polishing apparatus provided with a plurality of chambers as in the technique disclosed in JP-T-2003-528738 has a problem that the structure is complicated. Even if the pressure adjustment is performed by the plurality of chambers, it is still difficult to precisely control the polishing profile in the region having a width of about 3 mm on the outermost periphery of the wafer.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a polishing apparatus having a highly uniform polishing profile and a method of manufacturing a semiconductor device using the same.

  A polishing apparatus according to an embodiment of the present invention is a polishing apparatus that polishes the surface of a substrate by moving the substrate and the polishing cloth relative to each other while pressing the surface of the substrate against the polishing cloth. The polishing apparatus includes a substrate pressing unit and first and second polishing cloth pressing units.

  The substrate pressing unit presses the surface of the substrate against the polishing cloth by applying pressure to the back side of the substrate. The first polishing cloth pressurizing unit is disposed on the outer peripheral side of the substrate and presses the polishing cloth. The second polishing pad pressurizing unit is disposed on the outer peripheral side of the first polishing pad pressing unit, and has a configuration capable of controlling the pressure independently of the first polishing pad pressing unit.

  According to the present embodiment, the second polishing pad pressurizing unit has a configuration capable of controlling the pressure independently of the first polishing pad pressing unit. For this reason, each pressure of the 1st and 2nd polishing cloth pressurization part can be controlled independently, and the uniformity of a polishing profile can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
First, the configuration of the polishing apparatus according to the present embodiment will be described with reference to FIGS.

  FIG. 1 is a bird's-eye view schematically showing a configuration of a polishing apparatus according to Embodiment 1 of the present invention. Referring to FIG. 1, the polishing apparatus includes a polishing head HD, a polishing head support 12, a polishing cloth CL, a polishing cloth table 13, and a slurry supply unit 11.

  The polishing head HD has a function of pressing against the polishing pad CL while holding the wafer (substrate). Further, the polishing head HD is rotated as indicated by an arrow SH in the drawing with the polishing head support portion 12 as an axis. The polishing pad CL is rotated by the rotation of the polishing pad table 13 as shown by an arrow SC in the drawing. Further, a slurry as an abrasive is supplied to the polishing pad CL from the slurry supply unit 11.

  With this configuration, the wafer surface is polished by the relative movement of the wafer and the polishing pad CL while the surface of the wafer is pressed against the polishing pad CL containing the slurry.

  FIG. 2 is a schematic cross-sectional view for explaining the configuration of the polishing head, the polishing head support, and the polishing cloth of the polishing apparatus according to Embodiment 1 of the present invention. FIG. 3 is a schematic cross-sectional view taken along line III-III in FIG. 2 and 3 show a state where a wafer to be polished is set in the polishing apparatus.

  2 and 3, the polishing head HD includes a plate 22, a wafer pressurizing unit (substrate pressurizing unit) WP, a first retainer ring (first polishing cloth pressurizing unit) RR1, and a second. A retainer ring (second polishing cloth pressurizing portion) RR2 and first and second actuators AC1 and AC2 are provided. The polishing head HD is configured to transmit a force FA from the polishing head support 12 on the plate 22 and press the wafer (substrate) SB against the polishing pad CL.

  The wafer pressurizing unit WP is provided at the center of the lower surface of the plate 22 in order to press the surface of the wafer SB against the polishing pad CL by applying pressure P0 to the back side of the wafer SB. As a specific configuration of the wafer pressurizing unit WP, a configuration in which a backing film material is pasted on a ceramic member, a multi-airback type, an air pressure type, or the like can be used.

  The first retainer ring RR1 is arranged on the outer peripheral side of the wafer SB, and is configured to be able to press the polishing pad CL with the pressure P1. The first retainer ring RR1 is connected to the plate 22 via the first actuator AC1. Thus, the first retainer ring RR1 is configured such that the pressure P1 at which the first retainer ring RR1 presses the polishing pad CL can be controlled independently of the pressure P0.

  The second retainer ring RR2 is arranged on the outer peripheral side of the first retainer ring RR1, and is configured to be able to press the polishing pad CL with the pressure P2. The second retainer ring RR2 is connected to the plate 22 via the second actuator AC2. Accordingly, the second retainer ring RR2 is configured such that the pressure P2 at which the second retainer ring RR2 presses the polishing pad CL can be controlled independently of the pressures P0 and P1.

  In place of the simple ring-shaped first retainer ring RR1 (FIG. 3), a plurality of block-shaped first retainer rings RR1b can be used as shown in FIG. If the first actuator AC1 is provided for each block, each block can be driven independently. Therefore, even if some blocks are unevenly worn, it is possible to cope with this uneven wear by adjusting the first actuator AC1. it can. Alternatively, each block may be integrally driven by being attached to one pedestal.

  Moreover, the groove | channel for introducing a slurry may be formed in the surface which contact | connects the polishing cloth CL of 1st retainer ring RR1.

  A plurality of block-like structures similar to the first retainer ring RR1b shown in FIG. 4 may be used instead of the simple ring-like second retainer ring RR2 (FIG. 3). Further, a groove for introducing the slurry may be formed on the surface of the second retainer ring RR2 that is in contact with the polishing pad CL.

  Further, a third retainer ring that is arranged on the outer peripheral side of the second retainer ring RR2 and can press the polishing pad CL, and further a fourth retainer ring may be provided.

  Preferably, the first and second retainer rings RR1 and RR2 are made of different materials. Specifically, the first retainer ring RR1 is made of a soft material, and the second retainer ring RR2 is made of a hard material. For example, the material of the first retainer ring RR1 is polyphenylene sulfide (PPS) resin, and the material of the second retainer ring RR2 is PEEK (registered trademark) resin.

  Next, a wafer polishing method using the polishing apparatus of this embodiment will be described with reference to FIGS.

  Referring to FIGS. 2 and 3, wafer SB is set so as to be sandwiched between wafer pressing portion WP and polishing pad CL in the region surrounded by first retainer ring RR1.

  Wafer SB is pressed against polishing pad CL by pressure P0 by wafer pressing unit WP. The first retainer ring RR1 is pressed against the polishing pad CL with the pressure P1 adjusted by the first actuator AC1. The second retainer ring RR2 is pressed against the polishing pad CL with the pressure P2 adjusted by the second actuator AC2.

  With reference to FIG. 1, the slurry is supplied from the slurry supply unit 11 to the polishing pad CL. Further, each of the polishing pad CL and the polishing head HD is rotated as indicated by arrows SC and SH in the drawing. As a result, the wafer SB and the polishing pad CL are relatively moved while the surface of the wafer SB is pressed against the polishing pad CL containing the slurry. As a result, the surface of the wafer SB is polished.

  FIG. 5 is an explanatory view schematically showing the state of the polishing cloth in polishing using the polishing apparatus according to Embodiment 1 of the present invention. Referring to FIG. 5, the pressures P1 and P2 are set so that the CMP process is optimized. That is, the pressure P1 is adjusted so that rebound of the polishing pad CL does not deteriorate the uniformity of the polishing profile in the wafer SB surface, and the pressure P2 is a polishing shape (such as dishing or recessing) that is affected by the fuzzy state of the polishing pad CL. ) And the polishing rate affected by the temperature rise due to friction is adjusted to be optimum.

  For example, the pressure P1 is approximately the same as the pressure P0, and the pressure P2 is higher than the pressure P1. For example, P0 = 20 kPa, P1 = 20 kPa, and P2 = 40 to 50 kPa. When the second retainer ring RR2 is pressed against the polishing pad CL at a pressure P2 that is larger than the pressure P0 of the wafer SB, a rebound H is generated on the polishing pad CL. A retainer ring RR1 is located above the position where the rebound H occurs. The pressure P1 of the first retainer ring RR1 is approximately the same as the pressure P0 of the wafer SB, and no large rebound caused by the retainer ring RR1 occurs.

  FIG. 6 is an explanatory diagram schematically showing the state of the polishing pad in polishing using the polishing apparatus in the comparative example. Referring to FIG. 6, the polishing apparatus in this comparative example has only one retainer ring RR as a pressurizing unit disposed around wafer pressurizing unit WP, unlike the present embodiment. . The pressure PR at which the retainer ring RR presses the polishing pad CL is normally set to be larger than the pressure P0. For example, P0 = 20 kPa and PR = 40 kPa.

  When the retainer ring RR is pressed against the polishing pad CL at a pressure PR larger than the pressure P0 of the wafer SB, rebound Hc is generated on the polishing pad CL. The wafer SB is located above the position where the rebound Hc occurs. For this reason, the uniformity of the polishing profile of the wafer SB decreases at the position corresponding to the rebound Hc.

  Next, a method for manufacturing a semiconductor device using the polishing apparatus of this embodiment will be described with reference to FIGS.

  FIG. 7 is a schematic partial cross-sectional view of a semiconductor device obtained by the method for manufacturing a semiconductor device in the first embodiment of the present invention. Referring to FIG. 7, the semiconductor device has a functional layer FL, a wiring pattern WR, an insulating film IL, and a protective film IL2.

  The functional layer FL is a layer including a semiconductor element such as a transistor. A wiring pattern WR embedded in the insulating film IL is formed on the functional layer FL. A protective film IL2 is formed so as to cover the wiring pattern WR and the insulating film IL.

  FIG. 8 is a partial cross sectional view schematically showing a manufacturing process for the semiconductor device in the first embodiment of the present invention. Referring to FIG. 8, insulating film IL is deposited on functional layer FL. Next, the deposited insulating film IL is subjected to patterning for providing a through groove at a position where the wiring pattern WR is formed. Next, a metal film MT made of copper or the like is deposited so as to cover the patterned insulating film IL and fill the through groove. Thereby, the wafer SB having the functional layer FL, the insulating film IL, and the metal film MT is obtained.

  Next, the surface of wafer SB is polished using the polishing apparatus of the present embodiment to the surface indicated by the broken line in the direction of the arrow in the figure. As a result, the metal film MT other than the trench is removed, and the wiring pattern WR is formed from the metal film MT. Thus, the semiconductor device shown in FIG. 7 is obtained.

  According to the present embodiment, as shown in FIGS. 2 and 3, first and second retainer rings RR <b> 1 and RR <b> 2 capable of independently controlling pressure are provided around wafer pressurizing unit WP. Yes. Therefore, as shown in FIG. 5, even when the pressure P2 of the retainer ring RR2 is high, the rebound H does not affect the polishing profile in the surface of the wafer SB by adjusting the pressure P1 of the retainer ring RR1. Can be. As a result, the polishing profile can be made more uniform even at the outermost periphery of the wafer SB.

  Even when the pressure P1 of the first retainer ring RR1 is low, by increasing the pressure P2 of the second retainer ring RR2, the polishing cloth CL is strongly pressed down to suppress the fluffing of the polishing cloth CL, or to generate frictional heat. It is possible to increase the polishing rate depending on the chemical reaction rate.

  In addition, since the wafer SB can be polished with a highly uniform polishing profile as described above, the number of semiconductor devices obtained from each wafer SB can be increased or the manufacturing yield can be improved in the manufacture of semiconductor devices. be able to.

  According to the present embodiment, preferably, the first retainer ring RR1 is made of a soft material, and the second retainer ring RR2 is made of a hard material.

  Since the first retainer ring RR1 is made of a soft material, it is possible to make the surface roughness of the first retainer ring RR1 uniform in polishing the wafer SB by polishing the first retainer ring RR1 for a short time. For example, if the first retainer ring RR1 is a soft material such as PPS resin, the wafer SB can be polished with high uniformity after several tens of break-in operations (operation in which the surface of the retainer ring is polished and smoothed). It becomes possible. If the first retainer ring RR1 is made of PEEK (registered trademark), which is a hard material, a break-in operation of several hours or more is required.

  The second retainer ring RR2 is made of a hard material and has a long life. Further, since the second retainer ring RR2 is hard, the fluff of the polishing pad CL can be sufficiently suppressed. For example, when PEEK (registered trademark) resin is used rather than PPS resin, even if the pressure P2 is the same (for example, 50 kPa), fuzz of the polishing pad CL can be further suppressed. Thereby, it is possible to suppress the occurrence of dishing, thinning, erosion, recess, and the like in the polishing of the wafer SB.

  Since the second retainer ring RR2 is arranged farther from the wafer SB than the first retainer ring RR1, the influence of the surface roughness of the second retainer ring RR2 on the edge profile of the wafer SB is small. Therefore, a break-in operation for the second retainer ring RR2 is not necessary.

  That is, since the first retainer ring RR1 is made of a soft material and the second retainer ring RR2 is made of a hard material, it is possible to achieve both shortening of the break-in operation time and high polishing profile controllability and shape controllability. .

(Embodiment 2)
FIG. 9 is a schematic cross-sectional view for explaining the configuration of the polishing head of the polishing apparatus according to Embodiment 2 of the present invention. Referring to FIG. 9, the first retainer ring RR1 is supported by being connected to the second retainer ring RR2 via a spring (pressure buffering mechanism) SP. A height difference ΔH may be provided on the surfaces of the first and second retainer rings RR1 and RR2 on the polishing pad CL side. Unlike the first embodiment, the first actuator AC1 does not exist.

  FIG. 10 is a cross-sectional view schematically showing a state of polishing using the polishing apparatus according to Embodiment 2 of the present invention. Referring to FIG. 10, wafer SB is pressed against polishing pad CL by pressure P0 by wafer pressing unit WP. The second retainer ring RR2 is pressed against the polishing pad CL with the pressure P2 adjusted by the second actuator AC2. The first retainer ring RR1 is pressed against the polishing pad CL with a pressure P1 adjusted by the second actuator AC2, the spring SP, and the height difference ΔH. Therefore, the pressure P1 can be set independently of the pressures P0 and P2 by adjusting at least one of the spring SP and the height difference ΔH.

  FIG. 11 is a schematic cross-sectional view for explaining a configuration of a polishing head of a polishing apparatus according to a modification of the second embodiment of the present invention. Referring to FIG. 11, the second retainer ring RR2 is supported by being connected to the first retainer ring via a spring SP. Also in this modification, the pressures P1 and P2 can be set independently of each other.

  In addition, since the structure other than this of this Embodiment is the same as that of the structure of Embodiment 1 mentioned above, the same code | symbol is attached | subjected about the same element and the description is abbreviate | omitted.

  According to the present embodiment, the pressures P1 and P2 can be set independently of each other by the second actuator AC2 (first actuator AC1 in the modification) which is one actuator. Therefore, the effect similar to Embodiment 1 can be acquired with one actuator.

  Further, in the case where a polishing apparatus having only one actuator and one retainer ring (for example, the polishing apparatus in the comparative example described with reference to FIG. 6) is already held, the embodiment is simply performed by adding an additional retainer ring and a spring SP. 1 can be obtained.

(Embodiment 3)
FIG. 12 is a cross-sectional view schematically showing a state of polishing using the polishing apparatus according to Embodiment 3 of the present invention. FIG. 13 is a plan view of the wafer side along the line XIII-XIII in FIG. FIG. 14 is a cross-sectional view schematically showing how a wafer is mounted in the polishing apparatus according to Embodiment 3 of the present invention. FIG. 15 is a plan view taken along line XV-XV in FIG.

  Referring to FIGS. 12 to 14, the polishing apparatus according to the present embodiment includes a first retainer ring RR1e and a second retainer ring RR2e.

  The tip of the first retainer ring RR1e on the polishing cloth CL side has a shape that fills the gap E between the rounded edge portion (bevel portion) of the wafer SB and the polishing cloth CL during polishing. ing.

  The first retainer ring RR1e and the first actuator AC1 are configured such that the first retainer ring RR1e can be displaced Di in the in-plane direction of the surface of the wafer SB. Further, the first retainer ring RR1e and the first actuator AC1 are configured such that the first retainer ring RR1e can be displaced Do in the thickness direction of the wafer SB for pressure adjustment. Since the displacements Di and Do are performed simultaneously, the first retainer ring RR1e is configured to be displaced obliquely as indicated by D in the figure.

  The surface of the second retainer ring RR2e that faces the first retainer ring RR1e is inclined so as not to prevent the oblique displacement D of the first retainer ring RR1e.

  In addition, since the structure other than this of this Embodiment is the same as that of the structure of Embodiment 1 mentioned above, the same code | symbol is attached | subjected about the same element and the description is abbreviate | omitted.

  According to the present embodiment, during polishing, the gap portion E between the edge portion of the wafer SB and the polishing pad CL is filled with the tip portion of the first retainer ring RR1e. Thereby, rebound of polishing cloth CL resulting from existence of space part E can be controlled. Therefore, the uniformity at the wafer edge portion where the deterioration of uniformity is most remarkable can be enhanced.

  In order to precisely control the polishing of the edge portion of the wafer, it is necessary to make the retainer ring as close to the wafer as possible. In the first embodiment, a clearance of about 0.5 mm needs to be provided due to a variation in the diameter of the wafer SB and a problem of transfer accuracy. The clearance E (FIG. 5) due to this clearance causes a slight rebound of the polishing pad CL.

  In the present embodiment, there is almost no gap between the wafer SB and the first retainer ring RR1e. Therefore, when the pressures of the first retainer ring RR1e and the wafer SB are the same, the wafer diameter apparently appears. Is the same as expanding. That is, apparently, the portion that becomes the outer peripheral portion of the wafer does not exist in the wafer SB, so that the uniformity of the polishing profile of the wafer SB is improved.

  Further, according to the present embodiment, when the wafer SB is mounted, the first retainer ring RR1e can be positioned further away from the wafer SB in the in-plane direction of the wafer SB as shown in FIG. . Therefore, the tip of the first retainer ring RR1e can be prevented from hindering the mounting of the wafer SB.

(Embodiment 4)
FIG. 16 is a schematic cross-sectional view for explaining the configuration of the polishing apparatus according to the fourth embodiment of the present invention. Referring to FIG. 16, the polishing apparatus of the present embodiment includes a temperature adjustment mechanism TC that adjusts the temperature of second retainer ring RR2, which is a retainer ring located on the outermost periphery. The temperature adjustment mechanism TC incorporates, for example, a Peltier element or a nichrome wire.

  In addition, when a retainer ring is further provided in the outer periphery of 2nd retainer ring RR2, a temperature control mechanism is provided in the retainer ring provided in the outermost periphery.

  In addition, since the structure other than this of this Embodiment is the same as that of the structure of Embodiment 1 mentioned above, the same code | symbol is attached | subjected about the same element and the description is abbreviate | omitted.

  According to the present embodiment, the temperature of the second retainer ring RR2 can be adjusted by the temperature adjustment mechanism TC. Thereby, the temperature of the polishing pad CL containing the slurry can be positively controlled. This temperature control controls the rate of chemical reaction that occurs during polishing. Therefore, the polishing rate in polishing involving a chemical reaction can be controlled.

  Further, since the temperature adjustment mechanism TC itself has a function of generating heat, it is not necessary to increase the pressure P2 of the second retainer ring RR2 in order to increase the temperature. For this reason, wear of the retainer ring RR2 can be suppressed.

  A first retainer ring RR1 is provided between the second retainer ring RR2 whose temperature is adjusted by the temperature adjustment mechanism TC and the wafer SB. For this reason, it is possible to prevent the heat generated from the temperature adjustment mechanism TC from directly affecting the wafer SB.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention relates to a polishing apparatus having a retainer ring and a method of manufacturing a semiconductor device using the same.

It is a bird's-eye view which shows roughly the structure of the grinding | polishing apparatus in Embodiment 1 of this invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view for explaining a configuration of a polishing head, a polishing head support portion, and a polishing cloth of a polishing apparatus in Embodiment 1 of the present invention. FIG. 3 is a schematic sectional view taken along line III-III in FIG. 2. It is a schematic sectional drawing corresponding to the position along the III-III line of Drawing 2 for explaining the composition of the 1st retainer ring in the modification of Embodiment 1 of the present invention. It is explanatory drawing which shows roughly the state of the polishing cloth in the grinding | polishing using the grinding | polishing apparatus in Embodiment 1 of this invention. It is explanatory drawing which shows roughly the state of the polishing cloth in grinding | polishing using the grinding | polishing apparatus in a comparative example. 1 is a schematic cross-sectional view of a semiconductor device obtained by a method for manufacturing a semiconductor device in a first embodiment of the present invention. It is sectional drawing which shows roughly the manufacturing process of the semiconductor device in Embodiment 1 of this invention. It is a schematic sectional drawing for demonstrating the structure of the grinding | polishing head of the grinding | polishing apparatus in Embodiment 2 of this invention. It is sectional drawing which shows roughly the mode of grinding | polishing using the grinding | polishing apparatus in Embodiment 2 of this invention. It is a schematic sectional drawing for demonstrating the structure of the grinding | polishing head of the grinding | polishing apparatus in the modification of Embodiment 2 of this invention. It is sectional drawing which shows roughly the mode of grinding | polishing using the grinding | polishing apparatus in Embodiment 3 of this invention. FIG. 13 is a plan view of the wafer side taken along line XIII-XIII in FIG. 12. It is sectional drawing which shows roughly a mode that a wafer is mounted | worn in the grinding | polishing apparatus in Embodiment 3 of this invention. FIG. 15 is a plan view taken along line XV-XV in FIG. 14. It is a schematic sectional drawing for demonstrating the structure of the grinding | polishing apparatus in Embodiment 4 of this invention.

Explanation of symbols

  AC1 first actuator, AC2 second actuator, CL polishing cloth, HD polishing head, RR1, RR1b, RR1e first retainer ring, RR2, RR2e second retainer ring, SB wafer, SP spring, TC temperature adjustment mechanism, WP wafer addition Pressure part.

Claims (7)

A polishing apparatus for polishing the surface of the substrate by moving the substrate and the polishing cloth relative to each other while pressing the surface of the substrate against the polishing cloth.
A substrate pressing part for pressing the surface of the substrate against the polishing cloth by applying pressure to the back side of the substrate;
A first polishing cloth pressurizing portion disposed on the outer peripheral side of the substrate and pressing the polishing cloth;
A polishing apparatus comprising: a second polishing cloth pressurizing unit that is arranged on an outer peripheral side of the first polishing cloth pressurizing unit and has a configuration capable of controlling pressure independently of the first polishing cloth pressurizing unit.   2. The polishing apparatus according to claim 1, further comprising first and second actuators that press each of the first and second polishing cloth pressing portions against the polishing cloth. An actuator for pressing one of the first and second polishing cloth pressurizing portions against the polishing cloth;
The polishing apparatus according to claim 1, further comprising: a pressure buffering mechanism that connects the one and the other of the first and second polishing cloth pressurizing units and presses the other against the polishing cloth.   The polishing apparatus according to claim 1, wherein the first and second polishing cloth pressurizing parts are made of different materials.   The polishing apparatus according to claim 1, wherein the first polishing pad pressurizing portion is displaceable in an in-plane direction of the surface of the substrate.   The polishing apparatus according to claim 1, further comprising a mechanism that adjusts a temperature of the second polishing cloth pressurizing unit.   A method for manufacturing a semiconductor device, comprising a step of polishing the surface of the substrate using the polishing apparatus according to claim 1.

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