533527 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（） 發明領域： 本發明係有關於一種下電極上之晶圓位置的量測裝置 和方法。特別是有關於一種藉由量測晶圓上方與晶圓下方 之下電極上的壓力值差來量測晶圓於下電極上的位置是否 有所偏差（shift)的量測襞置和方法。 發明背景： 乾式触刻（dry etch)的製程在超大型積體電路（VLSI)的 製造中是相當重要的一環。所謂乾式蝕刻的製程係將晶圓 放入電装反應至之下電極上，再以真空粟（pump)抽氣。然 後將反應氣體送入電漿反應室，再以射頻場使其游離，並 不斷以真空泵抽氣。製程完成後，停止送氣並關掉射頻產 生器，再將殘留氣體排出至反應室外。晶圓在處理過後便 被移開，接著換下一片晶圓裝載進入反應室中並置於下電 極上。 一般而言，下電極有兩種固定晶圓的方式，其中一種 為靜電夾盤（electrostatic chuck ; E-chuck)，另一種則是使 用機械夾具（mechanical clamp)的方式。晶圓在下電極的位 置攸關著晶圓的姓刻速率和品質，當晶圓的位置有所偏差 時，晶圓會發生蝕刻過度（over-etch)和蝕刻不足（under_etch) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) (請先閱讀背面之注意事項再填寫本頁) -11----訂·-------- 經濟部智慧財產局員工消費合作社印製 533527 Λ 7 _ Β7___ 五、發明說明（） 的現象，因而降低良率（yield)，甚至導致晶圓的大宗報廢。 此外，晶圓的位置偏差更會使部分之下電極暴露於電漿 中，而引起電弧和產生微粒等損害。因此，如何即時 (real-time)偵測出晶圓在下電極上的位置發生偏差便成為 一個非常重要的課題。 有一些乾式蝕刻的製程需要藉由控制晶圓的溫度以得 到最佳的姓刻效果，而背面乱氣系統（backside helium system)便是其中較常用的方式。請參照第}圖，第i圖為 繪示習知之具有背面氦氣系統之下電極的結構示意圖。所 謂背面氦氣系統係將氦氣通入下電極4 0之複數個細槽4 4 和氣孔46，而使氦氣流至下電極40的上表面，藉以使氦 氣成為控制晶圓溫度的介質（medium)。當晶圓在下電極的 位置正確時，晶圓會完全蓋住這些細槽44和氣孔。而 當晶圓在下電極的位置有所偏差時，部分的細槽44和氣孔 46便會被暴露出來而使得氦氣的流量較前述之情況增加。 習知的技術便根據氦氣之流量增加來偵測晶圓位置是否有 所偏差。因此，對於使用背面氦氣系統之乾式蝕刻的製程 而言，氦氣的流量大小便可成為偵測晶圓在下電極的位置 的重要指標。然而，前述之方法卻完全不適用於那些不使 用背面氦氣系統之乾式蝕刻的製程，亦即那些乾式蝕刻的 製程仍缺乏一種偵測在下電極上之晶圓位置的量測裝置和 方法。 3 本紙張尺度適用中國國家標準（CNS)A4規格（2Γ〇_;：297公釐7*---------—— (請先閱讀背面之注意事項再填寫本頁) ------訂---------線▲ 533527 經 濟 部 智 慧 財 產 局 A7 五、發明說明（） 因此，非t、6 量測裝置和方、广刀需要發展一種下電極上之晶圓位置的 對於不使用背面弟Γ適用於所有乾式姓刻的製程’特別是 程。 氦氣系統來控制晶圓溫度的乾式蝕刻的製 發明目的及概述： 馨於上述之、& 之位置的指；〇以氦氣的流量做為偵測晶圓在下電極 圓溫度的僅可應用於有使用背面氮氣系統來控制晶 氦氣系統，：Α Γ ?製^，若乾式蝕刻的製程不使用背面 、…、、置測晶圓在下電極上的位置是否正確。 ®此，本發明« 位置的量測裝置* 、要目的為提供一種下電極上之晶圓 一種方法t t和方法。藉以提供所有的乾式蝕刻的製程 晶心產下電極上的位置是…，以發出 不足的現 、警訊。避兄晶圓發生蝕刻過度和蝕刻 生微粒等的二下電㈣暴露於…而引起之電狐和產 廢。 、°進而提鬲良率，更可避免晶圓的大宗報 本發明的另一目的么担# θ 目的為k供一種下電極上之晶圓位置的 篁1裝置和方法。藉以提供-種以臨場的方式(in-stiu)進 (請先閱讀背面之注意事項再填寫本頁) ------訂---------線—泰 消 費 合 作 社 印 製 533527 經濟部智慧时產局員工消費合作社印製 Λ7 B7 五、發明說明（） 行，且無須打開電製反應室的量測方法。本發明之量測# 置和方法可即時 <貞測出晶圓的位置發生偏差，並可進—+ 提供晶圓在下電極上的產量偏差的位置。當本發明與晶圓 傳送系統（transfer system)相結合時，本發明可回於 (feedback)晶圓在下電極上的位置來自動校正晶圓傳送系 統，以節省機台維修時間，故可獲得更多的機台運轉時間， 因而提高產率β 根據以上所述之目的，本發明提供了一種下電極上之 晶圓位置的量測裝置和方法。本發明之下電極上之晶圓位 置的量測裝置至少包括至少一個壓力量測元件安裝於承載 晶圓之下電極上。本發明之下電極上之晶圓位置的量測方 法係通入固定流量的氣體於電聚反應室，並控制此電聚反 應室於預設壓力值（即晶圓上方的壓力值）後，量測晶圓上 方與下電極上之背面氛氣系統的氣孔和細槽的一點（例 如：下電極上之中心點）的壓力值差（如機台沒有背面氦氣 系統’則可於下電極設置一麼力量測元件）。當晶圓的位置 正確而完全蓋住下電極時’此時所量測得之壓力值差最 大。重新裝載一晶圓後，再重覆前述之步驟，當量測得之 壓力值差變小時’即代表此重新裝載之晶圓的位置有所偏 差而暴露出部分之下電極。本發明之下電極上之晶圓位置 的量測裝置和方法更可依不同需要在下電極的不同位置上 安裝複數個壓力量測元件，（如機台有背面氦氣系統則可直 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297 :堃） f請先閱讀背面之注意事項再填寫本頁)533527 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention () Field of the Invention: The present invention relates to a device and method for measuring the position of a wafer on a lower electrode. In particular, it relates to a measurement setup and method for measuring whether the position of the wafer on the lower electrode is shifted by measuring the pressure difference between the upper electrode and the lower electrode below the wafer. Background of the invention: The dry etch process is a very important part in the manufacture of very large scale integrated circuits (VLSI). The so-called dry etching process is to place the wafer in the assembly and react to the lower electrode, and then vacuum pump. Then, the reaction gas is sent to the plasma reaction chamber, and then it is released by the RF field, and is continuously pumped by a vacuum pump. After the process is completed, stop the gas supply and turn off the RF generator, and then discharge the residual gas to the reaction room. The wafer is removed after processing, and then a wafer is loaded into the reaction chamber and placed on the lower electrode. Generally speaking, there are two ways of fixing the wafer for the lower electrode, one of which is an electrostatic chuck (E-chuck), and the other is a method of using a mechanical clamp. The position of the wafer on the lower electrode is related to the engraving rate and quality of the wafer. When the position of the wafer is deviated, over-etch and under-etch will occur on the wafer. This paper is applicable to China National Standard (CNS) A4 Specification (210 X 297 Gt) (Please read the precautions on the back before filling out this page) -11 ---- Order · -------- Consumption by Employees of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed 533527 Λ 7 _ Β7 ___ V. The phenomenon of the invention description (), thus reducing the yield, and even leading to the bulk scrap of the wafer. In addition, the wafer's positional deviation will expose some of the lower electrodes to the plasma, causing damage such as arcing and particle generation. Therefore, how to detect the deviation of the position of the wafer on the lower electrode in real-time has become a very important issue. There are some dry etching processes that need to control the temperature of the wafer to obtain the best surname effect, and the backside helium system is one of the more commonly used methods. Please refer to FIG.}, Which is a schematic diagram showing the structure of a conventional lower electrode with a helium system on the back. The so-called back helium system passes helium into the plurality of fine grooves 4 4 and air holes 46 of the lower electrode 40, so that helium flows to the upper surface of the lower electrode 40, so that the helium becomes a medium for controlling the temperature of the wafer ( medium). When the wafer is properly positioned on the lower electrode, the wafer will completely cover these fine grooves 44 and air holes. When the position of the wafer at the lower electrode is deviated, a part of the fine grooves 44 and the air holes 46 are exposed, so that the flow of helium gas is increased compared to the foregoing case. The conventional technique detects whether there is a deviation in the wafer position based on the increase in the flow of helium. Therefore, for a dry etching process using a back helium gas system, the flow rate of helium gas can become an important indicator for detecting the position of the wafer at the lower electrode. However, the foregoing method is completely unsuitable for those dry etching processes that do not use a back helium system, that is, those dry etching processes still lack a measuring device and method for detecting the position of the wafer on the lower electrode. 3 This paper size applies to China National Standard (CNS) A4 specifications (2Γ〇_ ;: 297 mm 7 * ------------- (Please read the precautions on the back before filling this page)- ---- Order --------- line ▲ 533527 Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of invention () Therefore, non-t, 6 measuring devices and square and wide knives need to develop a lower electrode The wafer position is not suitable for all processes with dry surface engraving, especially the process. The purpose and summary of the invention of dry etching for controlling the wafer temperature with a helium gas system are as follows: 〇 The flow rate of helium gas is used to detect the temperature of the wafer at the lower electrode circle. It can only be applied to the use of a backside nitrogen system to control the crystalline helium gas system: Α Γ? ^, Several etching processes are not used The back, ..., and position of the wafer on the lower electrode are correct. ® Here, the «position measuring device of the present invention * aims to provide a method and method of wafer on the lower electrode. By this way, all The position on the electrode produced by the dry etching process of the crystal core is ... Defects and warnings are avoided. To avoid the occurrence of over-etching of the wafer and the second generation of electrical particles such as etching particles, the electric fox and production waste are caused by..., And further improve the yield, which can also avoid wafers. The main purpose of this invention is another task of the present invention. # Θ The purpose is to provide a device and method for the wafer position on the lower electrode. In order to provide an in-stiu way (please read first) Note on the back, please fill out this page again) ------ Order --------- line-printed by Thai Consumer Cooperative 533527 printed by Employee Consumer Cooperative of Wisdom and Time Bureau of Ministry of Economic Affairs Λ7 B7 V. Description of Invention () OK, and there is no need to open the measuring method of the electrical reaction chamber. The measuring method and method of the present invention can immediately detect deviations in the position of the wafer, and can provide-+ to provide the wafer on the lower electrode The position of the deviation of the yield. When the present invention is combined with a wafer transfer system, the present invention can automatically correct the wafer transfer system by returning the position of the wafer on the lower electrode to save machine maintenance. Time, so you can get more machine operating time, so High yield β According to the above-mentioned object, the present invention provides a device and a method for measuring the position of a wafer on a lower electrode. The device for measuring the position of a wafer on a lower electrode of the present invention includes at least one pressure measurement The component is mounted on the electrode below the carrier wafer. The method for measuring the wafer position on the lower electrode of the present invention is to pass a fixed flow of gas into the electropolymerization reaction chamber, and control the electropolymerization reaction chamber at a preset pressure value. (That is, the pressure value above the wafer), measure the pressure difference (such as the center of the lower electrode) at the point of the pores and slots of the back atmosphere system on the lower electrode and the lower electrode (such as the center of the lower electrode). (If there is no back helium system, you can install a force measuring element on the lower electrode). When the wafer is in the correct position and completely covers the lower electrode, the pressure difference measured at this time has the largest difference. After re-loading a wafer, repeat the above steps again. When the pressure difference measured by the equivalent becomes smaller, it means that the position of the re-loaded wafer is a little different and the lower electrode is exposed. The device and method for measuring the wafer position on the lower electrode of the present invention can further install a plurality of pressure measuring elements at different positions of the lower electrode according to different needs. (If the machine has a helium system on the back, it can Applicable to China National Standard (CNS) A4 specification (210 X 297: 堃) f Please read the precautions on the back before filling this page)
533527 A7 B7 五、發明說明（ 壓差 設偏 預生 與發 置極 位電 同下 不在 當 圓 ， 晶 Λ»/ 槽知 細得 和可 孔即 氣 ， 的時 統小 系變 氣差 氛值 面力 背壓 用之 利值 接力 置 位 的 明 說 單 簡 式 圖 列 下 以 輔 中 字 文 明 說 之 後 往 於： 將中 例其 施’ 實述 佳闡 較的 的細 明詳 發更 本做 形 圖 結 的 極 電 下 之 統 系 氣 氦 面 背 有 具 之 知 習 示 繪 為 圖 ； 1 圖 第意 示 構 之 壓 知 的 習 作 之 運 用 際 使 實 所 之 IU4 !ΠΊ 施 施 實；實 佳圖佳 較意較 一示一 之的之 明件明 發元發 本關本 示 相 示 繪其繪 為與為 圖 {至圖 2 應 3 第反第 漿 電 室 應 反 漿 電 之 例 施 實 佳 較 1 另及 之以 明 .， 發圖 本意 示示 ; 繪的 表為件 果圖元 結 4 關 量第相 測 其 力 與 的 極 電 下 之 之 例 施 實 佳 較 1 另 之 明 發 本 示 繪 為 。 圖圖 5 意 第示 構 結 (請先閱讀背面之注意事項再填寫本頁) 訂------- 線麵 經濟部智慧財產局員工消費合作社印製 明 說 照 對 號 圖 體 氣 ο 1Α 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 533527 Λ7 B7 五、發明說明（） 20 電漿反應室 30 晶圓 40 下電極 44 細槽 46 氣孔 50 節流閥 60 隔離閥 70 真空泵 100、1 10、1 10R、1 10L 壓力量測元件 發明詳細說明： 本發明揭露一種下電極上之晶圓位置的量測裝置和方 法。本發明之下電極上之晶圓位置的量測裝置至少包括至 少一個壓力量測元件安裝於承載晶圓之下電極上。本發明 之下電極上之晶圓位置的量測方法係通入固定流量的氣體 於電漿反應室，並控制此電漿反應室於預設壓力量測後， 再藉由量測晶圓上方與承載晶圓之下電極上的壓力值差來 量測晶圓位於下電極上的位置是否有所偏差，以及其發生 偏差的位置。 請參照第2圖，第2圖為繪示本發明之一較佳實施例 所使用之習知之電漿反應室與其相關元件的示意圖。其中 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ;0 訂---------線* 經濟部智慧財產局員工消費合作社印製 533527 經濟部智慧財產局員工消費合作社印制π Α7 Β7 五、發明說明（） 晶圓30係承載於下電極40上，而於下電極40上設置有一 壓力量測元件1 1 0 (例如：於下電極上之中心點）。當輸入氣 體1 〇後，電漿反應室20的壓力係由壓力量測元件1 〇〇來 偵測，並由壓力控制系統（未繪示）來控制節流閥（throttle valve)50至一角度，使電漿反應室20的壓力固定於一預設 壓力值，而隔離闊60係用來緊急隔離電漿反應室20。此 時真空泵70的有效速率（effective speed ; Seff)會有以下之 關係式： 1/ Seff=l/Sp + 1/C (1) 其中Sp為真空泵70的固定速率；而c則為由節流闊 50所控制之系統阻抗（system conductance ; C)，不同的節 流闊5 0之角度會產生不同大小的系統阻抗c。由於在穩定 的情況（stable condition)之下，氣體 1〇 的通量（thr〇ughput ; Q)等於壓力值乘以真空泵的速率，故壓力量測元件丨丨〇的 讀數（PTho)等於Q/Sp，而壓力量測元件10〇的讀數（pTwo ; 即電漿反應至20的壓力值）等於Q/Seff。由關係式（1)乘以 Q 可得：Q/ Seff=Q/Sp + Q/C，故 Q/ Seff，Q/Sp= Q/c，即 p丁⑽ 與PTuo的壓力值差為Q/C。若Q趨近於〇或（：非常大時， PT100與PT110相等，即電聚反應室20的各部分之壓力均 相同。又，若通入一相當大之氣體10的流量時，PTigq與 PTll0的壓力值差會因Q/C變大而相當明顯。而在一般^的乾 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) ；-------訂---------線1·· 533527 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（) 式触刻的製程中’當姓刻完成之後，常會通入例如氮氣來 洗蘇（purge)電漿反應室20 ’因此’本發明可利用這個步 驟來量測晶圓在下電極的位置是否正確。然而，本發明亦 町通入任何流量之任何氣體，故本發明並不在此限。 請繼續參照第1圖和第2圖。當晶圓在下電極的位置 有所偏差時，部分之氣體會經由部分被暴露之下電極而流 至壓力量測元件110所連接之管路，因而使此處壓力增 加’即PT11()變大’ ΡΤ10〇與PTn〇的壓力值差會較晶圓在 下電極的位置正確時小。因此，晶圓在下電極的位置是否 正確便可偵測出來。若下電極上分佈有如第1圖所示之細 槽4 4和氣孔4 6，則Ρ Τ11 〇變化的程度將會更為顯著。請參 照第j圖’第3圖為纟會示本發明之一較佳實施例之實際運 作的壓力量測結果表，其中所使用的機台為LAM Research 公司所生產之Rainbow 4420和4720型蝕刻機。本發明之 一較佳實施例係以500每分鐘每標準立方公分（seem)的氮 氣為氣體10通入電漿反應室20後，轉動真空泵70於一固 定速率，並使用節流閥5 0來控制電蒙反應室2 0的壓力值 ΡΤιοο於2000毫托爾（mtorr)。由第3圖可知，當晶圓在下 電極的位置正確時，下電極上（即晶圓的下方）之壓力值 ΡΤ〖10分另U為640和400毫托爾，而與電聚反應室20的壓 力值差分別為1 360和1600亳托爾。當故意將晶圓偏置於 下電極之一邊時，例如：偏向下電極之右邊，壓力值PTll〇 9 (請先閱讀背面之注意事項再填寫本頁) #533527 A7 B7 V. Description of the invention (The differential pressure setting pre-generation and the setting of the pole position are not in the same circle at the same time. The face value back pressure is used to set the value of the relay. The simple diagram is supplemented by the Chinese civilization, and then goes to: "Exemplify the best practices in the example", explain the detailed details of the better explanation, and make a more detailed diagram. The system of helium under the polarized electricity is shown as a picture; the figure 1 shows the structure of the pressure and knowledge of the practice of IU4! Shi shi Shi Shi; The better one is better than the other one, the clear one, the one made by Yuan, the one, the one, the one, the one, the other, the one, the one, the other, the one, the one, the one, and the other, Let ’s make it clear. The drawing is intended; the drawing is an example of the result of a picture element with 4 levels of phase power measured under the force and the extreme electricity. Shi Shijia is better than 1 another. Figure Figure 5 shows the structure (please read first Please fill in this page before filling out this page) Order ------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Ministry of Economic Affairs prints the photo according to the figure in the figure. 1Α This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 533527 Λ7 B7 V. Description of the invention () 20 Plasma reaction chamber 30 Wafer 40 Lower electrode 44 Fine slot 46 Air hole 50 Throttle valve 60 Isolation valve 70 Vacuum pump 100, 1 10, 1 10R, 1 Detailed description of 10L pressure measuring element invention: The present invention discloses a device and method for measuring the wafer position on the lower electrode. The device for measuring the wafer position on the lower electrode of the present invention includes at least one pressure measuring element. On the electrode below the carrier wafer. The method for measuring the wafer position on the lower electrode of the present invention is to pass a fixed flow of gas into the plasma reaction chamber, and control the plasma reaction chamber after a predetermined pressure measurement Then, by measuring the pressure difference between the upper part of the wafer and the lower part of the carrier wafer, it is measured whether the position of the wafer on the lower electrode is deviated, and the position where the deviation occurs. Please refer to FIG. 2, 2nd In order to show a schematic diagram of a conventional plasma reaction chamber and related components used in a preferred embodiment of the present invention, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read first Note on the back, please fill in this page again); 0 Order --------- line * Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 533527 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs π7 Α7 Ⅴ. Invention Explanation () The wafer 30 is carried on the lower electrode 40, and a pressure measuring element 1 1 0 (for example, a center point on the lower electrode) is disposed on the lower electrode 40. After the gas 10 is input, the pressure of the plasma reaction chamber 20 is detected by the pressure measuring element 100, and the throttle valve is controlled by a pressure control system (not shown) from 50 to an angle The pressure of the plasma reaction chamber 20 is fixed at a preset pressure value, and the isolation 60 is used for emergency isolation of the plasma reaction chamber 20. At this time, the effective speed (Seff) of the vacuum pump 70 will have the following relationship: 1 / Seff = l / Sp + 1 / C (1) where Sp is the fixed speed of the vacuum pump 70; and c is determined by throttling. The system impedance (c) controlled by W50, different throttle angles of W50 will produce system impedance c of different sizes. Under stable conditions, the flux of gas 10 (thrughugh; Q) is equal to the pressure value multiplied by the speed of the vacuum pump, so the reading (PTho) of the pressure measurement element 丨 丨 is equal to Q / Sp, and the reading of the pressure measuring element 100 (pTwo; that is, the pressure value of the plasma reaction to 20) is equal to Q / Seff. Multiplying Q by the relationship (1): Q / Seff = Q / Sp + Q / C, so Q / Seff, Q / Sp = Q / c, that is, the pressure difference between pDing⑽ and PTuo is Q / C. If Q approaches 0 or (: very large, PT100 and PT110 are equal, that is, the pressure of each part of the electropolymerization reaction chamber 20 is the same. Also, if a relatively large flow of gas 10 is passed, PTigq and PTll0 The difference in pressure value will be quite obvious due to the larger Q / C. In general, the paper size of 8 sheets is applicable to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back before (Fill in this page); ------- Order --------- Line 1 ·· 533527 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs After the nickname is completed, the plasma reaction chamber 20 is often purged with nitrogen, for example. Therefore, the present invention can use this step to measure whether the position of the wafer on the lower electrode is correct. However, the present invention also Any gas flow at any flow rate, so the invention is not limited to this. Please continue to refer to Figure 1 and Figure 2. When the position of the wafer on the lower electrode is deviated, part of the gas will be exposed through the part The electrode flows to the pipe to which the pressure measuring element 110 is connected, so that Increasing the force 'that is, PT11 () becomes larger' The pressure difference between PT10 and PTn0 will be smaller than when the wafer is positioned correctly on the lower electrode. Therefore, whether the wafer is positioned correctly on the lower electrode can be detected. If the wafer is positioned correctly There are fine grooves 4 4 and air holes 46 as shown in FIG. 1, and the degree of change of PT 11 will be more significant. Please refer to FIG. J. FIG. 3 shows a preferred embodiment of the present invention. The actual operation pressure measurement result table of the embodiment, wherein the machine used is Rainbow 4420 and 4720 etching machines produced by LAM Research. A preferred embodiment of the present invention is 500 cubic meters per minute per standard cubic centimeter. (Seem) Nitrogen gas 10 is passed into the plasma reaction chamber 20, and the vacuum pump 70 is rotated at a fixed rate, and the throttle valve 50 is used to control the pressure value of the electromagnetism reaction chamber 20 at 2000 mtorr. As can be seen from Figure 3, when the wafer is in the correct position on the lower electrode, the pressure value PT on the lower electrode (that is, below the wafer) is 〖10 minutes, and U is 640 and 400 mTorr, which reacts with electropolymerization. The pressure difference in chamber 20 is 1 360 and 1600 Torr. When When the wafer is intentionally biased to one side of the lower electrode, for example: to the right of the lower electrode, the pressure value is PT111 (please read the precautions on the back before filling this page) #
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I I 線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 29^^^ 533527 A7 B7 經濟部智慧財產局員工消費合作社印制π 五、發明說明（） 分別上升至1040和1100毫托爾，而與電漿反應室20的壓 力值差則減少分別至為960和900毫托爾。因此，由這些 壓力值差的減少可以得知晶圓於下電極上的位置有所偏 差。 另外，本發明更可設置複數個壓力量測元件於下電極 上，藉以量測下電極上不同位置的壓力值來得知晶圓於下 電極上的發生偏差的位置。請參照第4圖和第5圖，第4 圖為繪示本發明之另一較佳實施例之電漿反應室與其相關 元件的示意圖，而第5圖為繪示本發明之另一較佳實施例 之之下電極的結構示意圖。本發明之另一較佳實施例係於 下電極的右邊、中心和左邊分別設置如第4圖和第5圖所 示之3個壓力量測元件1 1 OR、1 1 〇和1 1 0L，其壓力讀數分 別為PT11()R、PTii〇和PTiiol。當晶圓位置偏向下電極之右 邊時，部分之氣體會先流至壓力量測元件1 1 〇 L所連接之管 路，而使PTi 10L增加；反之，當晶圓位置偏向下電極之左 邊時，部分之氣體會先流至壓力量測元件1 1 0R所連接之管 路，而使PT110R增加。因此，藉由PT110R、ρτ110和PTi10L 的變化，便可偵測出晶圓在下電極的位置是否正確，和其 發生偏差的位置。以上所述本發明之另一較佳實施例所使 用之壓力量測元件的位置與數目僅為舉例說明，本發明並 不在此限。 10 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公f ) (請先閱讀背面之注意事項再填寫本頁) 0 ,I I n u ! n 一OJa n n ϋ 線丨释 533527 經濟部智慧財產局員工消費合作社印製 Λ7 B7 五、發明說明（） 因此’一種下電極上之晶圓位置的量測方法可綜合如 下·當例如以手動校正的方式來正確地放置晶圓於下電極 上後’通入固定流量的氣體於電漿反應室，再以節流闊來 控制電漿反應室於預設壓力值。分別讀取並記錄下電極上 之壓力量測元件量測得的壓力值，此時可得若千個參考壓 力值。再由晶圓傳送系統放置下一片晶圓於下電極上後， 重覆進行上述之步驟，此時可得若干個壓力值，若這些壓 力值中至少有一個大於同樣位置之參考壓力值時（亦即這 些壓力值與預設壓力值的壓力值差小於同樣位置之參考壓 力值與預設壓力值的壓力值差），則可斷定此晶圓於下電極 上的位置有所偏差’並可由這些具有較大壓力值的壓力量 測元件的相對位置來得知晶圓於下電極上發生偏差的位 置。 本發明之下電極上之晶圓位置的量測裝置和方法更可 進一步地與晶圓傳送系統相結合。本發明可回饋晶圓在下 電極的位置的訊息至晶圓傳送系統，藉以校正晶圓傳送系 統在自動放置晶圓時可能發生的誤差。至於如何應用本發 明所產生之晶圓在下電極的位置的訊息，乃為熟悉此技術 之人員所習知，故本發明不在此贅述。 綜合以上所述，本發明之一優點為提供一種下電極上 之晶圓位置的量測裝置和方法，本發明可量測晶圓在下電The paper size of the II line paper applies the Chinese National Standard (CNS) A4 specification (210 X 29 ^^^ 533527 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The pressure difference with the plasma reaction chamber 20 is reduced to 960 and 900 mTorr, respectively. Therefore, it can be seen from the reduction of these pressure difference that the position of the wafer on the lower electrode is biased. In the present invention, a plurality of pressure measuring elements can be set on the lower electrode, so as to measure the pressure value at different positions on the lower electrode to know the position where the wafer has deviated on the lower electrode. Please refer to FIG. 4 and FIG. 5. FIG. 4 is a schematic diagram showing a plasma reaction chamber and related components according to another preferred embodiment of the present invention, and FIG. 5 is a diagram showing a structure of a lower electrode according to another preferred embodiment of the present invention. Schematic view. Another preferred embodiment of the present invention is that three pressure measuring elements 1 1 OR, 1 1 0, and 1 1 are provided on the right, center, and left sides of the lower electrode as shown in FIGS. 4 and 5 respectively. 0L, the pressure readings are PT11 () R, PTii And PTiiol. When the wafer position is to the right of the down electrode, part of the gas will first flow to the pipeline connected to the pressure measuring element 1 10L, which will increase PTi 10L; otherwise, when the wafer position is to the down electrode On the left, part of the gas will first flow to the pipeline connected to the pressure measuring element 1 1 0R, which will increase the PT110R. Therefore, by changing the PT110R, ρτ110, and PTi10L, the wafer at the lower electrode can be detected Whether the position of the sensor is correct and the position where the deviation occurs. The position and number of the pressure measuring elements used in the another preferred embodiment of the present invention described above are merely examples, and the present invention is not limited thereto. Again applicable to China National Standard (CNS) A4 specifications (210 X 297 male f) (Please read the precautions on the back before filling out this page) 0, II nu! N One OJa nn 线 Line 丨 Release 533527 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperatives Λ7 B7 V. Description of the invention () Therefore, 'A method for measuring the position of the wafer on the lower electrode can be synthesized as follows: When, for example, the wafer is correctly placed on the lower electrode by manual calibration, Pass a fixed flow of gas into the plasma reaction chamber, and then use the throttle to control the plasma reaction chamber to a preset pressure value. Read and record the pressure values measured by the pressure measuring elements on the electrodes. Thousands of reference pressure values can be obtained. After the next wafer is placed on the lower electrode by the wafer transfer system, the above steps are repeated. At this time, several pressure values can be obtained. If at least one of these pressure values is When a reference pressure value greater than the same position (that is, the pressure difference between the pressure value and the preset pressure value is less than the pressure difference between the reference pressure value and the preset pressure value at the same position), it can be determined that the wafer is below The position on the electrode is biased 'and the relative position of the wafer on the lower electrode can be known from the relative positions of these pressure measuring elements with a large pressure value. The device and method for measuring the position of a wafer on an electrode under the present invention can be further combined with a wafer transfer system. The present invention can feedback the information of the position of the wafer at the lower electrode to the wafer transfer system, thereby correcting errors that may occur when the wafer transfer system automatically places the wafer. As for how to apply the information on the position of the lower electrode of the wafer generated by the present invention, it is well known to those skilled in the art, so the present invention will not repeat them here. To sum up, one advantage of the present invention is to provide a measuring device and method for the wafer position on the lower electrode.
II 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) .0 ..-------訂---------線- 533527 A7 B7 五、發明說明（） 極上的位置是否正確，藉以發出晶圓位置產生偏差的檠 訊。而可避免晶圓發生蝕刻過度和蝕刻不足的現象，和下 電極因暴露於電漿中而引起之電弧和產生微粒等的損害， 進而提高良率，更可避免晶圓的大宗報廢。 本發明的另一優點為提供一種下電極上之晶圓位置的 量測裝置和方法。本發明係以臨場的方式進行，且無須打 開電漿反應室。本發明可即時偵測出晶圓的位置偏差，並 可進一步提供晶圓在下電極上的所偏差的位置。故可節省 機台維修時間，而獲得更多的機台運轉時間，進而提高產 率。 如熟悉此而技術之人員所暸解的，以上所述僅為本發 明之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) ,0 訂---------線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t )II This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Please read the precautions on the back before filling this page) .0 ..------- Order ----- ---- Line-533527 A7 B7 V. Description of the invention () Whether the position on the pole is correct. It can avoid the phenomenon of over-etching and under-etching of the wafer, and damage to the lower electrode caused by arc and particle generation caused by exposure to the plasma, thereby improving the yield and avoiding mass scrap of the wafer. Another advantage of the present invention is to provide a device and method for measuring the position of a wafer on a lower electrode. The present invention is performed in a field manner without opening the plasma reaction chamber. The invention can detect the position deviation of the wafer in real time, and can further provide the deviation position of the wafer on the lower electrode. Therefore, machine maintenance time can be saved, and more machine operating time can be obtained, thereby improving productivity. As will be understood by those skilled in the art, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others that are completed without departing from the spirit disclosed by the present invention Equivalent changes or modifications should be included in the scope of patent application described below. (Please read the precautions on the back before filling this page), Order 0 --------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 male t)