JP3180438B2 - Plasma processing device substrate fixing method - Google Patents
Plasma processing device substrate fixing methodInfo
- Publication number
- JP3180438B2 JP3180438B2 JP13404692A JP13404692A JP3180438B2 JP 3180438 B2 JP3180438 B2 JP 3180438B2 JP 13404692 A JP13404692 A JP 13404692A JP 13404692 A JP13404692 A JP 13404692A JP 3180438 B2 JP3180438 B2 JP 3180438B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- processed
- fixing
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は，プラズマ処理装置内の
被処理基板の固定方法に関する。近年，ＬＳＩの高集積
化，微細化の要求にともない，ドライエッチング技術全
般の向上が必要となってくる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fixing a substrate to be processed in a plasma processing apparatus. In recent years, with the demand for high integration and miniaturization of LSI, it is necessary to improve dry etching technology in general.
【０００２】そのため，プラズマ処理装置内の被処理基
板の固定方法においても，その基板へのプラズマの影響
を考慮した対策が必要となる。Therefore, in the method of fixing a substrate to be processed in a plasma processing apparatus, it is necessary to take measures in consideration of the influence of plasma on the substrate.
【０００３】[0003]
【従来の技術】従来のプラズマ反応室等，真空中の被処
理基板の固定方法は，当初機械式固定方法が用いられて
いたが，被固定物である被処理基板と，吸着固定面であ
る電極固定面の固定力に不均衡が生じ易く，従って，被
固定物と吸着固定面間に隙間が生じて，プラズマが侵入
し，レジスト膜の焦げ，パターン異常，加工精度の不安
定等の発熱や蓄熱による悪影響がある。2. Description of the Related Art A conventional method of fixing a substrate to be processed in a vacuum, such as a plasma reaction chamber, uses a mechanical fixing method. However, a substrate to be processed, which is a fixed object, and an adsorption fixing surface are used. Imbalance tends to occur in the fixing force of the electrode fixing surface, so that a gap is generated between the object to be fixed and the adsorption fixing surface, plasma invades, and the heat generation such as burning of the resist film, abnormal pattern, and unstable processing accuracy. And the negative effect of heat storage.
【０００４】また，エッチングレートやアッシングレー
ト，或いは膜のエッチング形状に対して，電界効果な
ど，制御分布の不均一を生じ，更に，電気特性にダメー
ジを与える。In addition, the distribution of control such as an electric field effect becomes non-uniform with respect to an etching rate, an ashing rate, or an etching shape of a film, and further damages electric characteristics.
【０００５】そのため，静電チャック固定方式が開発さ
れ，更に被処理基板の冷却を行うためのガス冷却方式と
静電チャック方式を併用した固定方法が用いられるよう
になった。[0005] Therefore, an electrostatic chuck fixing method has been developed, and a fixing method using both a gas cooling method for cooling a substrate to be processed and an electrostatic chuck method has come to be used.
【０００６】これらの固定方法は，機械式固定方法より
は，被固定物と吸着固定面間の固定力が改善されている
が，固定方式において，静電チャックによる吸着力と，
ガス冷却による離力が働き，相反する力から成り立つ方
式であるため，静電チャックの寿命が短く，被処理基板
の離脱やレジスト膜の焦げ，特性のダメージがしばしば
多発する。In these fixing methods, the fixing force between the object to be fixed and the suction fixing surface is improved as compared with the mechanical fixing method.
Since the separation force by gas cooling acts and the system is composed of contradictory forces, the life of the electrostatic chuck is short, and detachment of the substrate to be processed, scoring of the resist film, and property damage often occur frequently.
【０００７】また，静電チャックの短命はプラズマのダ
メージによるものである。この為，プラズマの被処理基
板への回り込みは特に近い将来の課題でもある微細パタ
ーンの制御性を重視するプロセス条件の発展への大きな
阻害要因になる。[0007] The short life of the electrostatic chuck is due to plasma damage. For this reason, the sneaking of the plasma onto the substrate to be processed is a major obstacle to the development of the process conditions that emphasize the controllability of the fine pattern, which is also an issue in the near future.
【０００８】[0008]
【発明が解決しようとする課題】従って，プラズマが発
振しない領域での真空吸着で被固定物と吸着固定面間へ
のプラズマの侵入を阻止し，プラズマの物理化学的，或
いは電気的ダメージ等の弊害を取り除く必要がある。Accordingly, vacuum suction in a region where plasma does not oscillate prevents plasma from penetrating between the object to be fixed and the suction-fixing surface, and prevents physicochemical or electrical damage of the plasma. The evil needs to be removed.
【０００９】また，被処理基板への電界効果の均一性を
得るとともに，静電チャックの併用で吸着効果を補強
し，更に静電チャックの寿命の延命効果を図るため，電
界効果の不均一性，蓄熱，材料自身の変質，低いエッチ
ングレート，温度効果の不均一性，エッチングレートの
不均一性，材料自身への電気的ダメージ防止，静電チャ
ックの短命等の問題を解決する必要がある。In addition, in order to obtain uniformity of the electric field effect on the substrate to be processed, to reinforce the adsorption effect by using the electrostatic chuck, and to extend the life of the electrostatic chuck, the electric field effect is not uniform. It is necessary to solve problems such as, heat storage, deterioration of the material itself, low etching rate, non-uniformity of the temperature effect, non-uniformity of the etching rate, prevention of electrical damage to the material itself, and short life of the electrostatic chuck.
【００１０】更に，将来的に微細パターンで緻密な製造
物の品質の制御を不可能にする要因の排除も考慮せねば
ならぬ。本発明は，以上の諸問題を解決する適切なる方
式を開発することを目的として提供されるものである。Furthermore, it is necessary to consider the elimination of factors that make it impossible to control the quality of a fine product with a fine pattern in the future. The present invention is provided for the purpose of developing an appropriate method for solving the above problems.
【００１１】[0011]
【課題を解決するための手段】図１は本発明の原理説明
図である。図において，１は被処理基板，２は基板ホル
ダ，３は真空排気管，４は静電チャックである。FIG. 1 is a diagram illustrating the principle of the present invention. In the figure, 1 is a substrate to be processed, 2 is a substrate holder, 3 is a vacuum exhaust pipe, and 4 is an electrostatic chuck.
【００１２】本発明では，ガス冷却を行う場合に，被処
理基板１の基板ホルダ２への真空吸着固定に際して，プ
ラズマが発生しない様に，吸着固定の真空度をプラズマ
発生が起こらない10-4〜10-5Torr付近以上で吸着固定す
る。つまりプラズマ発生可能領域外の高真空度域を使用
する。In the present invention, when performing gas cooling, in a vacuum suction fixed to the substrate holder 2 of the substrate 1, as plasma is not generated, it does not occur plasma generating vacuum suction fixing 10-4 Adsorb and fix at about 10 -5 Torr or more. That is, a high vacuum degree area outside the plasma generation area is used.
【００１３】そして，静電チャック４との併用吸着固定
を行えば，更に確実な安定性を持たせることが可能とな
る。この時，吸着固定材料である被処理基板１が加熱し
ない状態，または温度コントロールをするため，被処理
基板１と接する基板ホルダ２の吸着面に温度制御が可能
な機能をもたせる。[0013] If the suction and fixation is performed in combination with the electrostatic chuck 4, more reliable stability can be provided. At this time, in order to control the temperature in a state where the substrate 1 to be processed, which is an adsorption fixing material, is not heated, or to control the temperature, the suction surface of the substrate holder 2 in contact with the substrate 1 to be processed is provided with a function capable of controlling the temperature.
【００１４】即ち、本発明の目的は、プラズマ処理装置
内の被処理基板の固定方法であって、図１に示すよう
に、基板ホルダ２内に設けた真空排気管３により、該被
処理基板１の背面を、プラズマが発生しない真空度領域
で吸着保持するとともに、静電チャック４を併用するこ
とにより達成される。That is, an object of the present invention is a method of fixing a substrate to be processed in a plasma processing apparatus. As shown in FIG. 1, the substrate to be processed is evacuated by a vacuum exhaust pipe 3 provided in a substrate holder 2. 1 of the back, with plasma is sucked and held at a vacuum degree region not occur, is achieved by this <br/> and used in combination electrostatic chuck 4.
【００１５】[0015]
【作用】本発明では, プラズマが吸着固定面，及び被処
理基板の背面へ回り込むことを阻止することが，エッチ
ングへの有効性，効率化のかぎとなる。According to the present invention, the prevention of the plasma from sneaking into the adsorption fixing surface and the back surface of the substrate to be processed is the key to the effectiveness and efficiency of etching.
【００１６】そのため，真空による吸着固定の真空度を
プラズマ発生域外の高真空度10-4〜10-5Torrの領域, ま
たはそれ以上の真空度で吸着固定すると, 被処理基板と
基板ホルダ間へプラズマが回り込まない。更に, 静電チ
ャックを併用して使用すると, 電界効果の均一性が得ら
れる。[0016] Therefore, if the degree of vacuum for suction and fixation by vacuum is set to a high degree of vacuum outside the plasma generation region of 10 -4 to 10 -5 Torr or higher, a gap between the substrate to be processed and the substrate holder is obtained. Plasma does not flow. Furthermore, when used in combination with an electrostatic chuck, uniformity of the electric field effect can be obtained.
【００１７】[0017]
【実施例】図２は本発明の一実施例の説明図である。図
において，１は被処理基板，２は基板ホルダ，３は真空
排気管，４は静電チャック，５はチャンバ，６は蓋，７
はＯリング，８はガスシャワ，９は石英リング，10はプ
ラズマ, 11は対向電極（ガス導入盤) ，12は電極基板ホ
ルダである。FIG. 2 is an explanatory diagram of one embodiment of the present invention. In the figure, 1 is a substrate to be processed, 2 is a substrate holder, 3 is a vacuum exhaust pipe, 4 is an electrostatic chuck, 5 is a chamber, 6 is a lid, 7
Is an O-ring, 8 is a gas shower, 9 is a quartz ring, 10 is plasma, 11 is a counter electrode (gas introduction board), and 12 is an electrode substrate holder.
【００１８】図２により本発明の一実施例について説明
する。被処理基板１としてシリコンウエハを用い，ウエ
ハ上のアルミニウム(Al)膜をプラズマエッチングする。An embodiment of the present invention will be described with reference to FIG. Using a silicon wafer as the substrate 1 to be processed, an aluminum (Al) film on the wafer is plasma-etched.
【００１９】エッチングガスとして塩素(Cl2)60sccm,三
塩化硼素(BCl3)100sccm をチャンバ５内にガスシャワ８
を介して導入する。プラズマエッチングの条件として，
チャンバ８内の真空度0.06Torr, 周波数13.56MHz, 出力
250〜300 ＷでAl膜のエッチングを行った。A gas shower 8 containing 60 sccm of chlorine (Cl 2 ) and 100 sccm of boron trichloride (BCl 3 ) as an etching gas in the chamber 5.
Introduce through. As the conditions for plasma etching,
Chamber 8 vacuum degree 0.06 Torr, frequency 13.56 MHz, output
The Al film was etched at 250 to 300 W.
【００２０】エッチングのためには，10-2〜10-3Torrの
真空度でないとプラズマが生じない。吸着固定用の真空
ポンプはロータリーポンプまたはドライポンプ, 及び,
ターボポンプを用いて行う。そして, 被処理基板１の吸
着固定中の真空度はプラズマ発生が起こらない10-4〜10
-5Torr付近の高真空度, 或いはそれ以上の高真空度で吸
着固定をしている。また, 静電チャック４との併用で,
より吸着固定力の分布を均一化し, 放熱をスムーズにし
ている。For etching, plasma is not generated unless the degree of vacuum is 10 -2 to 10 -3 Torr. Vacuum pumps for adsorption and fixing are rotary pumps or dry pumps, and,
This is performed using a turbo pump. The degree of vacuum during the adsorption and fixation of the substrate 1 to be processed is 10 -4 to 10
Adsorption is fixed at a high vacuum of around -5 Torr or higher. Also, in combination with the electrostatic chuck 4,
The distribution of the adsorbing and fixing force is made more uniform, and the heat is released smoothly.
【００２１】[0021]
【発明の効果】以上説明したように, 本発明によれば,
エッチング分布の改善, エッチングの高速化によるスル
ープットの改善，製造障害の減少効果が著しく，また使
用ガス量の減少によるコストダウン，静電チャックの長
寿命化が図られ，半導体素子の品質向上，歩留り確保に
寄与するところが大きい。As described above, according to the present invention,
Improvement of etching distribution, improvement of throughput by high-speed etching, remarkable effect of reduction of manufacturing failure, reduction of gas usage, cost reduction, long life of electrostatic chuck, improvement of semiconductor element quality, yield It greatly contributes to securing.
【図１】 本発明の原理説明図FIG. 1 is a diagram illustrating the principle of the present invention.
【図２】 本発明の一実施例の説明図FIG. 2 is an explanatory view of one embodiment of the present invention.
１ 被処理基板 ２ 基板ホルダ ３ 真空排気管 ４ 静電チャック ５ チャンバ ６ 蓋 ７ Ｏリング ８ ガスシャワ ９ 石英リング 10 プラズマ 11 対向電極（ガス導入盤) 12 電極基板ホルダ DESCRIPTION OF SYMBOLS 1 Substrate to be processed 2 Substrate holder 3 Vacuum exhaust pipe 4 Electrostatic chuck 5 Chamber 6 Cover 7 O-ring 8 Gas shower 9 Quartz ring 10 Plasma 11 Counter electrode (gas introduction board) 12 Electrode substrate holder
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/3065 H01L 21/68 C23C 16/509 ──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/3065 H01L 21/68 C23C 16/509
Claims (1)
方法であって、基板ホルダ内に設けた真空排気管によ
り、該被処理基板の背面を、プラズマが発生しない真空
度領域で吸着保持するとともに、静電チャックを併用す
ることを特徴とするプラズマ処理装置被処理基板固定方
法。1. A method for fixing a substrate to be processed in a plasma processing apparatus, wherein a back surface of the substrate to be processed is suction-held by a vacuum exhaust pipe provided in a substrate holder in a vacuum degree region where plasma is not generated. With the electrostatic chuck
The plasma processing apparatus the processing substrate fixing method characterized by that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13404692A JP3180438B2 (en) | 1992-05-27 | 1992-05-27 | Plasma processing device substrate fixing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13404692A JP3180438B2 (en) | 1992-05-27 | 1992-05-27 | Plasma processing device substrate fixing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05326451A JPH05326451A (en) | 1993-12-10 |
| JP3180438B2 true JP3180438B2 (en) | 2001-06-25 |
Family
ID=15119103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13404692A Expired - Fee Related JP3180438B2 (en) | 1992-05-27 | 1992-05-27 | Plasma processing device substrate fixing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3180438B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3742000B2 (en) | 2000-11-30 | 2006-02-01 | 富士通株式会社 | Press machine |
| EP1458019A3 (en) * | 2003-03-13 | 2005-12-28 | VenTec Gesellschaft für Venturekapital und Unternehmensberatung | Mobile transportable electrostatic substrate holders |
| JP2008028021A (en) * | 2006-07-19 | 2008-02-07 | Disco Abrasive Syst Ltd | Plasma etching device and plasma etching method |
| JP5869943B2 (en) * | 2012-04-04 | 2016-02-24 | 東京エレクトロン株式会社 | Substrate holding device and substrate holding method |
| JP5565495B2 (en) * | 2013-04-12 | 2014-08-06 | 大日本印刷株式会社 | Substrate fixing device |
-
1992
- 1992-05-27 JP JP13404692A patent/JP3180438B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05326451A (en) | 1993-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010321 |
|
| LAPS | Cancellation because of no payment of annual fees |