TW531439B - Connecting device of exhaust treatment device for use in semiconductor manufacturing process - Google Patents

Abstract

This invention is provides a connecting device for vertically connecting to a gas transport pipeline and a wet type cleaning device of a semiconductor manufacturing process. The connecting device comprises an annular shell having an upper opening and a lower opening for connecting to the air transport pipeline and the wet type cleaning device, respectively. One side of the annular shell is equipped with a fluid transportation attachment. The connecting device further includes a dismountable multi-orifice nozzle that is connected to the fluid transportation attachment by a pipeline, causing the dismountable multi-orifice nozzle to be fixed to a location close to the center of the annular shell at a predetermined distance, wherein when the gas in the gas transport pipeline passes through the connecting device via the upper opening, a predetermined fluid is transported to the multi-orifice nozzle by means of the fluid transportation attachment. The multi-orifice nozzle sprays the fluid towards an inner wall of the annular shell at a 15 to 40 degrees angle to extend the cleaning cycle of the gas transport pipeline.

Description

531439-钟 89112633_ 年月 日 修 心 _ V. Description of invention (1) '' Field of invention. The invention provides a connection device, in particular a connection device for connecting a vacuum pump outlet line and a wet scrubber in a semiconductor private waste processing system to effectively avoid the vacuum pump outlet end official Blocking of the line (c 1 ogging). Background note

Si 1 iC0n nitride (Si 3n4) is a common dielectric material used in semiconductor manufacturing. The most important application is as an etch mask for the silicon-oxygen layer, but because it is not easily penetrated by oxygen The characteristics are also used in the local oxidation (local oxidation) process as a masking layer when the field oxide layer grows. In addition, silicon nitride's ability to prevent metal ions and its ability to block water vapor has also made it widely used as a protective layer for semiconductor devices.

The general method for forming silicon nitride is to use chemical vapor deposition, including plasma enhanced chemical vapor deposition (Plasma-enhanced CVD, PECVD) and low pressure chemical vapor deposition (iow-pressure CVD, LPCVD). Both. Among them, the PECVD method belongs to a relatively low temperature (less than 45 ° C) process, so the production of the silicon nitride protective layer is made by the PECVD method. The LPCVD rule belongs to a higher temperature (700 to 800 ° C) process, which is a high temperature oxidation furnace tube called high temperature oxidation

Page 5 531439 _ Case No. 89126533 _ month_g_ amendment_ V. Description of the invention (2) furnace, HTO furnace). When performing LPCVD silicon nitride deposition, dichlorosi lane (SiH2Cl 2) and ammonia (ammonia, NH 3) are generally used as reaction gases, which are passed into a high-temperature oxidation furnace tube and the pressure is controlled at 0. · Between 1 and 1 Torr. Since dichlorosilane is a liquid at normal temperature, the method for generating dichlorosilane gas is to heat the container containing the dichlorosilane fired liquid. In addition, in order to avoid condensing dichlorite, the process pipelines that transport dichlorosilane gas are covered and heated by a tape heater. The chemical reaction formula for forming LPVCD silicon nitride is shown in formula (1): 3SiH2Cl2 (g) + 7NH3 (g)-

Si 3N4 (s) + 3NH4C1 (g) + 3HCl (g) + 6H2 (g) (1) Because the process waste gas produced after LPCVD silicon nitride deposition includes ammonium chloride (NH4C1) gas Toxic gas, so the process waste gas is pumped out of the high-temperature oxidation furnace tube through a vacuum pump, and then needs to be processed by a process waste gas treatment system. Generally, a wet scrubbing device is used. The use of water in contact with the exhaust gas of the process containing the gasified ammonium gas can effectively remove the ammonium chloride gas due to its characteristic of being easily soluble in water ′ via the reaction of formula (2). NH4C1 (g) + H20 (1)-> NH4 + 〇H- (aq) + HCl (aq) (2) Please refer to Figure 1. Figure 1 shows the conventional LPCVD silicon nitride exhaust gas treatment system.

531439 Case number 89126533 V. Description of the invention (3) Configuration diagram. As shown in Fig. 1, the pressure in the oxidation furnace tube 10 is controlled in the temperature oxidation furnace tube 10, and the process drawn from the temperature oxidation furnace tube 10 is controlled, and the pipeline 14 is sent to the vacuum pump gas, hydrogen chloride, Hydrogen and micro-range line 12 and process line 14 ^ 4 'for removing gas from process exhaust gas 18' so as not to cause vacuum pumping known LPCVD silicon nitride deposition reaction system 'and use a vacuum pump 20 to heat 0.1 to 1 Torr. From the high exhaust gas 18 through a process line 12 and the 20 ° process exhaust gas 8, the silicon nitride solid particles in the amount of ammonium chloride are contained. The damage between the solid particles in the system as a cold trap and the initial condensation of ammonium chloride 2 0. The process exhaust gas 19 processed by the condenser 14 contains ammonium gas, chloride lice and hydrogen gas, and is then converted from the vacuum pump 20 to a process exhaust gas having a large pressure 2 3 through a transmission line 2 2 Conveyed to a condenser 24. Through the condenser 24, the concentration of the vaporized ammonium gas in the process exhaust gas 23 can be further reduced to the process exhaust gas 25, and it is transported to a wet scrubbing device 30 via the transfer line 26. The condensers 14 and 24 can be the condensers provided by E D W A R D S. The wet scrubbing device 30 and the transfer line are connected by a special joint device 28 to avoid the leakage of process exhaust gas 25. The connection device 2 8 is installed upright between the conveying line 26 and the wet brushing device 30. It should be noted that, for the convenience of explaining the present invention, the pipelines and devices shown in FIG. 1 are only for illustrating the background of the present invention. Omitted.

531439 Case number 89126533 V. Description of the invention (4) Month Revision Please read the drawing for the intention. See Figure 2 5 1. Hollow shell line, while the other end is known near the connection device, to avoid the joint 5 7 The external nitrogen contains a diversion water flow 6 5 through a process exhaust gas 70 0 and the gasified ammonium gas 1 *, Figure 1 is a picture ~ As shown in the figure, one end of the connection device 51 (the upper 28 contains one (the lower end is open π 4 2 2 and the port 4 1) is connected to 2 8 and the other is a seal structure used to connect the wet process-free exhaust gas 5 3 Position gas supply system 5 l attack. Nitrogen sealing plate 69 is set close to ^ In addition, the conventional connector 67 flow slow guide j opening 42 attached to the flow guide 69 on the deflector 69 is removed after contact with the water flow. 2 8 section cylinder The middle process exhaust gas scrubbing is installed near the upper structure 5 3 series by the connection equipment, and the process waste is enlarged to show the empty casing conveying pipe. The opening of the learning end is connected by a continuous 2 8 and a second 2 8 5 in the gas 70, and the conventional connection device 2 8 is very low in the efficiency of the treatment of ammonium chloride gas in the process waste gas, plus the ammonium chloride gas is easy to adhere to the pipe wall, so it is easy to cause the upper end of the connection device 2 8 to open 4 1 and the blockage of the exhaust gas pipeline. Generally speaking, 'installation is known The exhaust gas system connected to the device 28 must clean the exhaust gas pipeline once every three days. In addition, if the pressure drop across the vacuum pump 20 exceeds 5 psi, it will stop immediately. Therefore, in order to avoid temporary interruption of the process, you must ensure that The unblocking of the gas pumping line at the outlet of the vacuum pump 20. Summary of the invention

531439 _Case No. 89126533_year month day__ V. Description of the invention (5) Therefore, the main object of the present invention is to provide a connection device to solve the problems of the conventional technology. Another object of the present invention is to provide a connection device that does not require nitrogen sealing, which can reduce the blockage of the pipeline, thereby extending the pipeline cleaning cycle. In a preferred embodiment of the present invention, the device includes a ring-shaped housing, and the ring-shaped housing includes an upper opening and a lower opening for connecting the gas delivery line and the brushing device, respectively, and a side of the ring housing There is at least one fluid transport joint on the side, and the device further includes at least one detachable porous nozzle, which is connected to the fluid transport joint through a connecting pipe, so that the detachable porous nozzle is fixed below the upper opening for a predetermined time. A distance close to the center of the annular casing. In a preferred embodiment of the present invention, the connecting pipe is an L-shaped stainless steel pipe, and the detachable porous nozzle has 12 fine holes divided into two layers, which are evenly distributed on the porous nozzle. According to the device of the present invention, when the gas in the gas transfer line passes through the connection device through the upper opening, a predetermined fluid is transferred to the porous nozzle through the fluid transfer joint, and the predetermined fluid is transferred to the porous nozzle through the porous nozzle. 1 5 Q to 4 5. Spray at an angle toward the inner wall of the annular casing to extend the cleaning cycle of the gas delivery line.

531439 _ »89126533___ year, month, day, amendment 5. Description of the invention (6) Detailed description of the invention Please refer to FIG. 3 ′ FIG. 3 is a schematic diagram of the configuration of the LPCVD silicon nitride exhaust gas treatment system of the present invention. As shown in FIG. 3, the LPCVD silicon nitride deposition process of the present invention is performed in a high-temperature oxidation furnace tube, and a vacuum pump is used to control the pressure in the = temperature oxidation furnace tube to 10 To 1 Torr. The process exhaust gas 8 extracted from the high-temperature furnace tube 10 is transmitted to a vacuum pump 20 through a process line 2 and a process tube 14. The process waste gas 8 contains ammonium gasification, hydrogen chloride, hydrogen, and a small amount of silicon nitride solid particles. Between the process officer 12 and the process line 14 is a cold trap 14 for removing solid particles in the process exhaust gas 18 and preliminarily condensing the ammonium chloride gas to avoid causing a vacuum pump 2 0 s damage. Processed by condenser 1 4 = Waste gas 19 contains ammonium chloride gas, hydrogen chloride and hydrogen, and then changes from ^ 豕 20 to process pressure exhaust gas 82 with a larger pressure, through a pipe diameter ... Line 84 is conveyed to a wet scrubbing device 30. The joint device 88 of the invention of transmission and closing is installed upright between the wet brushing device 30 and the taste line 84. It is worth noting that the LPCVD silicon nitride ^ of the present invention provides a condenser between the vacuum pump 20 outlet and the wet brushing device 30, and requires any condenser, and replaces it with a heating belt 86. It is covered with i 84 and the joint device 88 of the present invention. The heating belt 86 may be good = the temperature of the sending line 8 4 is heated to 300 to 400 ° C. In the comparative example of the present invention, the temperature is heated to 150 ° C, the purpose is Make sure that the waste gas' gasification gas does not condense during the rotation process.

531439 Case number 89126533 V. Description of the invention (7) Amendment In the fifth embodiment of the invention, the heating belt 86 can also be replaced by a heating jacket. It should be emphasized that, because the LPCVD nitride gas waste gas treatment system of the present invention is configured with the joint of the present invention, it can be 洎 = pump 20 outlet end to the brush scrub condenser, saving costs, and also Avoid clogging the condenser. Please refer to Figure: Figure 4 is the intention of the present invention. As mentioned before: The invention of the connecting device 88 is used. The connection and exhaust gas at the exit end of the Pu body is shown. The connection device 8 8 includes a right-side connector. As shown in Fig. 4, the connector 92, an L-shaped connection pipe 921, a ring casing, and a fluid wheel 96 are provided. The upright and high-yield production of the annular housing 90 is a detachable / type porous nozzle. The upper opening 1 2 5 and the lower opening 0] 9 Brother 丨 丨 :: f each has a gradual and wet brushing device. The diameter of the upper opening 125 is 3 pairs, and the diameter of the T-line is 4 inches. The fluid conveying connection _ q ^ Two openings, + Qianshuo 9 ″ system δ is connected to the side of the% -shaped housing 90, and is connected to a > ', L body rotary pipeline 丨 〇〇, the All the way 9 4. Detachable multi-hole spray gun (Freezing, connecting to the connection port of Li connection pipe)] about 88.8Z ^ hunting type connection pipe 94 is fixed in the preferred embodiment of Shangming, ring open, jealous _ ± set In the present article I, (carbon stee 1 ^ ^ (SS316) ^^ inner wall. However, the present invention can be used with similar hard materials without holes or protrusions :: J The material described in Mingtu 'any pair of rot J As a material of the% -shaped casing 9 of the present invention, for example

531439 Case No. 89126533 Month, Amendment V. Description of Invention (8) Such as alloy. An enlarged view of the detachable porous nozzle 96 according to the present invention is shown at the bottom of FIG. It can be clearly seen from the figure that the multi-hole nozzle 9 6 is similar to a pyramid shape and is fastened and fixed to the end of the L-shaped connection pipe 9 4 by a threaded portion 9 9. The 12 fine holes 98 are divided into two upper and lower layers (rows) evenly distributed on the porous nozzle 96, preferably six in the upper layer and six in the lower layer. 2 至 2mm 之间。 In a preferred embodiment of the present invention, the pores 98 are circular holes, the diameter of about 0.2 to 2mm. The angle between the water column sprayed through the upper pores 98 and the horizontal plane should be less than a specific angle 6 »,

A preferred range of 0 is between 15. Between 4 and 5. It should be noted that the water column sprayed through the upper pores 9 8 cannot be sprayed directly upwards, that is, the openings 1 2 5 cannot be sprayed upwards to avoid water vapor accumulating in the front-end exhaust gas transmission pipeline. In addition, the number, shape, and size of the pores 98 can be adjusted according to changes in the process state. For example, when the flow of the exhaust gas in the process increases, the number of pores 9 8 distributed on the porous nozzle 96 can be increased to 20 , Even 2 or 4 at the same time, reducing the pore size of 9 8 to increase the water pressure of the spraying water flow.

In a preferred embodiment of the present invention, the fluid delivery pipeline 100 is used to provide a fixed pressure water flow, which includes a water pump 103, a control valve 101, such as a solenoid valve, and A side branch pipe (by pass) 1 0 2. The water temperature is room temperature, but warm or hot water can be used if necessary. The bypass line 10 2 is controlled by a manual valve 10 2 a for the flow of water passing through it. In order to prevent the fine holes 98 in the porous nozzle 96 from being blocked, the side branch pipe 10 2 must always have a fixed small flow of water, so the manual valve 1 02 is controllable.

Page 12 531439 _Case No. 89126533 _ Month and Day _ Amendment V. Description of the Invention (9) " "-Valves for regulating the flow rate, such as ball valves (g 1 0 ba 1 va 1 ve) or dishes ( butterfly valve). When the gas i2〇 in the gas transmission line passes through the upper opening 1 2 5 and passes through the connecting device 8 8, a pressure signal 1 0 5 of the furnace tube atm indicating exhaust gas emission will be transmitted to the control valve 1 〇 丨10 〇 At this time, a water flow with a fixed water pressure will be transmitted to the porous nozzle 96 through the fluid transfer joint 9 2 and the L-shaped connection pipe 9 4, and the water flow will be passed through the hole 9 8 on the porous nozzle 96. 1 5. To 4 5. The angle is sprayed towards the light sliding inner wall of the annular housing 90. The pressure signal 105 is directly transmitted from the pressure gauge on the furnace tube to the control valve 101 for feedback control. Compared with the conventional technology, the present invention does not require a nitrogen-sealed connection device, which can reduce the blockage of the pipeline, thereby extending the pipeline cleaning cycle. In addition, since the LPCVD silicon nitride exhaust gas treatment system of the present invention is configured with the joint device 88 of the present invention, the condenser between the vacuum pump 20 outlet end and the wet brushing device 30 can be omitted, in addition to saving costs, it also Avoid the situation that the condenser is blocked. With the joint device 88 of the present invention, the cleaning cycle can be extended from the original twice a week to about once every three to six months. The above are only the preferred embodiments of the present invention. Any equal changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent of the present invention.

Page 13 531439 _Case No. 89126533_Year Month Day__ Brief description of the diagram Brief description of the diagram Figure 1 shows the configuration of a conventional LPCVD silicon nitride exhaust gas treatment system. FIG. 2 is an enlarged schematic cross-sectional view of the connecting device in FIG. 1. Figure 3 is a schematic configuration diagram of the LPCVD silicon nitride exhaust gas treatment system of the present invention. FIG. 4 is an enlarged schematic cross-sectional view of a connecting device according to the present invention. Explanation of symbols in the diagram 10 Silicon nitride high temperature oxidation furnace tube 12 Process line 14 Condenser 16 Process line 18 Process exhaust 19 Process exhaust 20 Vacuum pump 22 Send line 23 Process exhaust 24 Condenser 25 Process exhaust 26 ¥ m Send line 28 Connector Device 30 Wet scrubbing device 41 Upper end open a 42 Lower end open V 51 Hollow case 53 Nitrogen seal structure 55 Nitrogen supply system 57 Connector 65 Water flow 67 Connector 69 Baffle 70 Process exhaust gas 82 Process exhaust gas 84 Feed line 86 plus Tropical 88 joint device

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531439 Case No. 89126533 Modified diagram of the month Simple explanation 90 Upright hollow ring housing 92 Fluid delivery joint 94 L-shaped connecting pipe 96 Removable porous nozzle 98 Fine L 99 Threaded part 100 Fluid delivery pipe 101 Control valve 102 By-pass line 102a Manual valve 103 Water pump 120 Process exhaust gas 125 Upper opening 126 Lower opening

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Claims (1)

531439 Kinds of connections 1. The joints are scheduled to be connected. The porous spray is directed to the rationale cycle. Case No. 6. Patent application scope. Pei Zhi line and a brushing device. An annular shell. Detachable multi-connection 'make the distance close to the middle when the gas is set, a pre-mouth, and the moon through the ring shell' is used to connect a semiconductor (wet scrubber), which includes an upper opening and a wire and the brushing device And joints; and orifice nozzles, by connecting a detachable porous nozzle to the center of the fixed position of the annular casing, the gas in the rotary pipeline will pass through the fluid to spray the pre-inner wall from the porous nozzle to extend the _ Modification __ The gas delivery pipe connection device of the process includes: The lower openings are used respectively and the side pipeline of the annular casing and the fluid delivery are determined below the upper opening, and the upper opening is transmitted to the constant fluid through the delivery joint. With a predetermined angle of the gas transmission line, such as the connection device of the scope of patent application No. 1, wherein the gas transmission & ^ is a pipeline at the exit end of a VaCUUm pump, which is used to convey exhaust gas from a silicon nitride HTO furnace. 3. The connection device according to item 2 of the scope of patent application, wherein the outlet pipe of the vacuum pump is covered by a heating jacket or a tape heater, and is heated to about 150 ° c. 4 · The connection device according to item 2 of the patent application, wherein the silicon nitride is high Page 16 No. 531439 Case No. 89126533 Date of Amendment 6. Scope of Patent Application The exhaust gas produced by the furnace tube contains ammonium chloride (NH4C1) and hydrogen. 5. The connection device according to item 1 of the patent application scope, wherein the annular casing is made of stainless steel (SS316) or carbon steel. 6. The connection device according to item 1 of the patent application, wherein the inner wall of the annular casing is a smooth inner wall. 7. For example, the connection device of the scope of patent application includes a heating belt to cover the connection device, and the connection device is heated to about 150 ° C. 8. The connection device according to item 1 of the patent application, wherein the detachable porous nozzle is made of stainless steel and includes 12 fine holes divided into two layers, which are evenly distributed on the porous nozzle. 9. The connection device according to item 1 of the patent application, wherein the predetermined fluid is warm water or hot water. 10. The connection device according to item 1 of the scope of patent application, wherein the predetermined fluid is controlled by a control valve, and the control valve is controlled by a furnace tube ATM ^ 1. Page 17 531439 Case No. 89126533 Month Amendment 6. Scope of patent application 1 1. For the connection device of scope 1 of the patent application, the predetermined angle is about 15. To 4 5 °. 1 2. A connection device for connecting a vacuum pump outlet gas transmission line and an exhaust gas scrubbing device, the connection device includes: a vertical hollow ring housing, including an upper opening and a lower opening for connecting the Gas transmission line and the scrubbing device; At least one fluid transfer joint is provided at the side of the annular casing; and at least one detachable porous nozzle is connected to the fluid transfer joint through an L-shaped connecting pipe, so that the detachable porous nozzle is fixed to A predetermined distance below the upper opening is close to the position of the center of the annular casing; wherein when the gas in the gas delivery line passes through the connection device through the upper opening, a predetermined fluid is transmitted to the porous nozzle through the fluid delivery joint, In addition, the predetermined fluid is sprayed toward the inner wall of the annular casing at a predetermined angle through the porous nozzle to avoid the blockage of the gas transmission line. 1 3. The connection device according to item 12 of the scope of patent application, wherein the outlet pipe of the vacuum pump is used to convey the exhaust gas generated by a silicon nitride high temperature furnace tube. 14. The connection device according to item 12 of the scope of patent application, wherein the vacuum pump outlet pipe and the connection device are covered by a heating jacket or electric heating belt, and are heated to about 150 ° C. Page 18 531439 Case No. 89126533 Amendment VI. Application for patent scope 1 5. For the connection device for scope of patent application item 13 where the exhaust gas generated by the silicon nitride high temperature furnace tube contains ammonium gasified (NH4C1 Only hydrogen. 16. The connection device according to item 12 of the scope of patent application, wherein the hollow ring shell is composed of stainless steel (SS 3 1 6) or carbon steel. 1 7. As the scope of application for patent No. 1 The connection device of item 2, wherein the inner wall of the annular casing is a smooth inner wall. 18. The connecting device according to item 12 of the scope of patent application, wherein the diameter of the upper opening is smaller than the diameter of the lower opening. 19. The connection device according to item 12 of the scope of patent application, wherein the detachable porous nozzle includes 12 fine holes divided into two layers, which are evenly distributed on the porous nozzle. 20. The connecting device according to item 12 of the patent application scope, wherein the predetermined fluid is warm water or hot water. 2 1. The connection device according to item 12 of the scope of patent application, wherein the predetermined fluid is controlled by a control valve, and the control valve is controlled by a furnace tube ATM signal. Page 19