TW201422999A - Semiconductor manufacturing apparatus having control function of powder generation - Google Patents

Abstract

The present invention relates to a semiconductor manufacturing apparatus having a control function of powder generation for preventing a reaction byproduct contained in a gas, which is discharged from a chemical vapor deposition processing chamber and passes through a vacuum pump in manufacturing semiconductors or liquid crystal displays from deposited, in a form of powder, on a gas discharge conduit. Heating components are respectively installed in a front stage conduit and the gas discharge conduit and simultaneously apply direct or indirect heating, in order to extend cleaning cycles of the front stage conduit and the gas discharge conduit. The semiconductor manufacturing apparatus of the present invention includes a front stage conduit connected between a processing chamber and a vacuum pump. A gas discharge conduit is connected between the vacuum pump and a cleaner. Heating components are respectively installed in the front stage conduit and the gas discharge conduit.

Description

Semiconductor manufacturing device having function of suppressing powder generation

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus having a function of suppressing powder generation for suppressing chemical vapor deposition (CVD, Chemical Vapor) in manufacturing a semiconductor or liquid crystal display (LCD). Deposition) The reaction by-products in the gas discharged from the processing chamber and passing through the vacuum pump are vapor-deposited in the exhaust pipe, and the heating elements are respectively disposed in the Fore line and the exhaust line and used together. Direct and indirect heating, which can extend the cleaning cycle of the front and exhaust pipes.

Generally, the semiconductor manufacturing process is generally composed of a pre-process (manufacturing process) and a post-process (packaging process).

In the pre-process, a thin film is vapor-deposited on a wafer in various processing chambers, and the vapor-deposited thin film is selectively etched, and a specific pattern is processed by repeatedly performing these processes, thereby manufacturing a semiconductor wafer (Chip) ). And, in the post-process, separately separating the wafer manufactured in the previous process, and the lead frame (Lead Frame) is combined to be packaged as a finished product.

At this time, the film is vapor-deposited on the wafer or the film deposited on the wafer is subjected to an etching process using a harmful gas in the processing chamber at a high temperature. During the execution of such a process, various combustible gases and gases including corrosive impurities and toxic components are generated in a large amount in the inside of the processing chamber. That is, only about 30% of the harmful gas is vapor-deposited on the surface of the wafer inside the processing chamber, and a part of the unreacted gas is discharged.

Therefore, a scrubber for purifying the gas discharged from the processing chamber and discharging it to the atmosphere is provided at the rear end of the vacuum pump for bringing the processing chamber into a vacuum state.

However, when the gas is solidified between the processing chamber and the vacuum pump to become a powder, the powder adheres to the foreline pipe and the exhaust pipe, causing the exhaust pressure to rise and causing the vacuum pump to flow while the powder flows into the vacuum pump. failure. That is, the reaction by-product (By-product) in the gas discharged from the processing chamber to the pump adheres to the inner wall of the foreline pipe and the exhaust pipe, causing clogging of the foreline pipe and the exhaust pipe, and It is placed on the body of the vacuum pump, which causes damage to the vacuum pump, thereby shortening the life.

Thus, in order to solve the above problems from various aspects, as one of the representative solutions, a heating jacket is disposed on the outer surface of the front duct or the exhaust duct. However, since this uses an indirect heating method, there is a problem that the removal efficiency of the powder is low, and thus it is necessary to convert to the direct heating method.

Prior art literature

Patent literature

Patent Document 1: Korea 1020070030615 A

Patent Document 2: Korea 200166263 Y1

The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus having a powder suppressing function: a heating element is disposed in each of a front stage duct and an exhaust duct, and direct and indirect heating methods are used together. The double heating by the pre-stage pipeline and the exhaust duct can effectively suppress the reaction by-products in the gas discharged from the processing chamber and passing through the vacuum pump to be vapor-deposited in the preceding pipeline and the exhaust duct.

In order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus having a function of suppressing powder generation, comprising a front stage pipe for connecting between a processing chamber and a vacuum pump, and an exhaust duct for connecting between the vacuum pump and the scrubber. It is characterized in that it comprises heating elements respectively arranged in the above-mentioned front stage duct and exhaust duct.

Here, preferably, the front stage pipe includes: a center connecting pipe, a pair of L-shaped intermediate connecting pipes, forming a right angle with the center connecting pipe, and respectively connecting with both ends of the center connecting pipe, and a vertical connecting pipe One of the above intermediate connecting pipes; one pair of the above intermediate connecting pipes are disposed in line with each other.

Preferably, the heating assembly includes a heating jacket disposed to cover an outer surface of the front duct and the exhaust duct, and an inner heater disposed inside the front duct and the exhaust duct The above internal heating The device comprises: a male terminal and a female terminal, an insulating material covering the male terminal and the female terminal to insulate them, and a magnesium metal protection tube that compresses and covers the outer peripheral surface of the insulating material; the internal heater is a coil type.

Preferably, the insulating material has a density of 2 g/cm ² to 3 g/cm ² .

Preferably, the inner and outer surfaces of the above-mentioned magnesium metal protection tube are further coated with chromium nitride (Chromium Nitride).

Preferably, the inner and outer surfaces of the magnesium metal protection tube are further coated with diamond-like carbon (DLC).

Preferably, the insulating material and the magnesium metal protection tube are simultaneously compressed on the male terminal and the female terminal.

Preferably, a second temperature sensor is further disposed, the second temperature sensor being exposed to the hollow of the front duct and the exhaust duct for maintaining the interior of the front duct and the exhaust duct Proper temperature.

Preferably, a first temperature sensor is further provided, and the first temperature sensor is disposed on the front stage duct and the exhaust duct to prevent overheating of the front stage duct and the exhaust duct.

According to the present invention, a semiconductor manufacturing apparatus having a function of suppressing powder generation is provided with internal heaters inside the front duct and the exhaust duct, thereby directly heating reaction by-products passing through the front duct and the exhaust duct to about 170 ° C or higher. Thereby, it is possible to effectively suppress the reaction by-products in the gas discharged from the processing chamber and passing through the vacuum pump to be vapor-deposited in the preceding stage pipe and the exhaust pipe. As a result, the cleaning cycle of the front stage pipe and the exhaust pipe can be lengthened, so that the time for cleaning can be reduced. And human consumption.

100‧‧‧Semiconductor manufacturing equipment

101‧‧‧Connecting processing chamber

102‧‧‧vacuum pump

104‧‧‧ scrubber

106‧‧‧Pre-stage pipeline

106a‧‧‧Center connecting tube

106b‧‧‧Intermediate connecting tube

106c‧‧‧Vertical connecting tube

108‧‧‧Exhaust pipe

110‧‧‧heating components

112‧‧‧heating jacket

114‧‧‧Internal heater

116‧‧‧ male terminal

118‧‧‧Female terminal

120‧‧‧Insulation materials

122‧‧‧Magnesium metal protection tube

124‧‧‧First temperature sensor

126‧‧‧Second temperature sensor

AV‧‧‧ angle valve

TMP‧‧‧ turbomolecular pump

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an embodiment of a semiconductor manufacturing apparatus having a powder suppressing function of the present invention; Fig. 2 is a perspective view showing a front stage duct of the heating unit of Fig. 1, and Fig. 3 is a view showing an intermediate connecting tube of Fig. 2. FIG. 4 is a perspective view showing a main portion of the structure of the internal heater of FIG. 2; FIG. 5 is a schematic structural view showing an exhaust duct of the heating unit of FIG. 1. FIG. A perspective view of the exhaust duct in the state in which the heating element portion is in the cut state.

Generally, depending on the temperature and pressure, the combination of TiCl and NH ₃ reacts directly with HCl and NH ₃ to form a by-product as follows.

NH ₃ (g) + HCl (g) → NH ₄ Cl (s) ... produces white powder

TiCl ₄ +nNH ₃ → TiCl ₄ nNH ₃ (n=2~8)...Yellow powder

Here, in the foreline and exhaust ducts, as a by-product formation Under the conditions of 150 ° C or less, a white powder and a yellow powder were formed, and no powder was formed at 170 ° C. In the present invention, the internal heater is provided inside the front duct and the inside of the exhaust duct, and development is carried out by directly transmitting a sufficient heat of 150 ° C or more to the gas molecules, and no powder is formed.

Basically, as time passes, the powder accumulates in a large amount, causing the pressure in the exhaust duct to rise, and the PM (atomic radius) period is usually one month, but after the internal heater of the present invention is applied, the PM period is extended. More than 2 months, thereby reducing the time and labor consumption for cleaning.

Further, among the constituent members of the internal heater used in the present invention, magnesium is used as the insulating material. A compound called magnesium and oxygen is chemically called bitter soil, which is called magnesium oxide in the industry, and is called magnesium oxide as a pharmaceutical. Although it is a white amorphous powder, it is precipitated in a solution dissolved in borate. Crystallization of equiaxed crystal systems. Although it is slightly soluble in water, it is alkaline, but it is easily soluble in acid and ammonia. When the metal magnesium is heated in the air or the magnesium carbonate is thermally decomposed, it can be used as a refractory material for bismuth, magnesium cement, a catalyst, and an adsorbent, and an antacid or a laxative can be used as a medicine. Product.

Moreover, it has excellent wear resistance and corrosion resistance and is suitable for metal forming or non-metal working. In particular, when applied to an injection mold, the phenomenon of sintering with an injection product can be minimized.

Hereinafter, the contents of the present invention will be described in detail by way of embodiments with reference to the accompanying drawings. The following examples are merely illustrative, and the scope of the invention is not limited to this.

1 is a view integrally showing a semiconductor manufacturing apparatus 100 having a powder suppressing function of the present invention, FIG. 2 is a view showing a front stage pipe 106 to which the heating unit 110 is applied in FIG. 1, and FIG. 3 is a view showing FIG. FIG. 4 is a view showing a main portion of the configuration of the internal heater 114 in FIG. 2, and FIG.

Fig. 5 is a view showing the exhaust duct 108 to which the heating unit 110 is applied in Fig. 1, and Fig. 6 is a view showing the exhaust duct 108 in a state in which the heating element 110 is partially cut away in Fig. 5.

Referring to FIGS. 1 through 6, a semiconductor manufacturing apparatus 100 having a function of suppressing powder generation of the present invention is constituted by a front stage pipe 106 and an exhaust duct 108 for suppressing vapor deposition of a powder, and a foreline pipe 106 is used to connect the process chamber 101. Between the vacuum pump 102 and the vacuum pump 102, an exhaust duct 108 is used to connect between the vacuum pump 102 and the scrubber 104.

The heating elements 110 are disposed in the foreline conduit 106 and the exhaust conduit 108, respectively. At this time, preferably, the front stage pipe 106 includes a center connecting pipe 106a and a pair of substantially L-shaped intermediate connecting pipes 106b, and the pair of intermediate connecting pipes 106b form a right angle with the center connecting pipe 106a, and are respectively connected to the center connecting pipe 106a The both ends are connected, and the pair of intermediate connecting pipes 106b are arranged in line with each other. One of the intermediate connection pipes 106b is connected to one end of the front stage pipe 106. The vertical connecting pipe 106c is provided in one of the intermediate connecting pipes 106b.

The heating assembly 110 includes a heating jacket 112 disposed to wrap the outer surfaces of the front duct 106 and the exhaust duct 108, and an internal heater 114 disposed inside the foreline duct 106 and the exhaust duct 108.

The internal heater 114 includes: a male terminal 116 and a female terminal 118; an insulating material 120 covering the male terminal 116 and the female terminal 118 to insulate them; and a magnesium metal protection tube 122 that compresses and covers the outer periphery of the insulating material 120 surface. Preferably, the internal heater 114 is of a coil type at this time. This is to uniformly maintain the internal temperature of the front duct 106 and the exhaust duct 108 uniformly by the heat of the internal heater 114. Preferably, the inner heater 114 is narrower from the central portion toward both ends. This is also to maintain the internal temperature of the foreline pipe 106 and the exhaust pipe 108 uniformly as a whole.

Preferably, the insulating material 120 has a density of 2 g/cm ² to 3 g/cm ² .

Preferably, the inner and outer surfaces of the magnesium metal protection tube 122 are also coated with chromium nitride.

Preferably, the inner and outer surfaces of the magnesium metal protection tube 122 are also coated with diamond-like carbon. Preferably, the internal heater 114 is a Mineral Insulator Cable. In the metal protection tube 122 made of a material such as magnesium to be described later, conductor wires such as the male terminal 116 and the female terminal 118 which are functional wires selected according to the purpose are protected.

Here, the diamond-like carbon coating has a high hardness characteristic and the like physical properties similar to diamond, and refers to an amorphous carbon coating containing hydrogen. The characteristics of the diamond-like carbon coating based on plasma chemical vapor deposition are as follows.

- Standard coating thickness is 2 microns to 3 microns.

- The hardness is from 1000 kg/mm ² to 1500 kg/mm ² (depending on the process conditions).

- Low coefficient of friction: Without lubrication, the coefficient of friction is 0.1~0.2 (to Constant at 200 ° C).

- Thermal stability: Stable in the atmosphere up to 400 °C.

- Treatment temperature: 100 ° C or less.

- Corrosion resistance: insoluble in acids and bases.

- Low object aggression: Very little damage to the material of the object.

- Release property: reduce adhesion and sintering of soft metal.

- Ultra-smoothness: The smoothness of the substrate is not impaired, and the accuracy of the film size can be ensured.

- Insulation: Large resistance.

At the same time, since the diamond-like carbon coating has excellent lubricity, the powder is not vapor-deposited, and since it has high corrosion resistance, it is safe against gases such as TiCl ₄ , ClF ₃ , and NF ₃ .

The second temperature sensor 126 is disposed in a hollow interior of the forward conduit 106 and the exhaust conduit 108 for maintaining the interior of the foreline conduit 106 and the exhaust conduit 108 at an appropriate temperature.

Preferably, a first temperature sensor 124 is provided at the foreline conduit 106 and the exhaust conduit 108 to prevent overheating of the foreline conduit 106 and the exhaust conduit 108.

Here, it is preferable that the insulating material 120 and the magnesium metal protection tube 122 are simultaneously compressed for the male terminal 116 and the female terminal 118.

Here, the reference numeral "TMP" denotes a plurality of turbomolecular pumps disposed on the bottom surface of the processing chamber 101, and the reference numeral "AV" denotes an angular valve disposed between the turbo molecular pump TMP and the foreline pipe 106.

Hereinafter, a semiconductor manufacturing apparatus having a powder suppressing function of the present invention having the above-described configuration will be described in detail with reference to the accompanying drawings.

First, referring back to FIGS. 1 to 4, the vacuum pump 102 is used to bring the processing chamber 101 into a vacuum state. The scrubber 104 is connected to the rear end of the vacuum pump 102 through an exhaust duct 108 which is provided for purifying the gas discharged from the processing chamber 101 and discharging it to the atmosphere.

The semiconductor manufacturing apparatus 100 having the function of suppressing powder generation of the present invention is provided in the front stage duct 106 and the exhaust duct 108, respectively, wherein the front stage duct 106 is used to connect between the processing chamber 101 and the vacuum pump 102, and the exhaust duct 108 is used for A vacuum pump 102 is connected between the scrubber 104.

Looking at the action state of the semiconductor manufacturing apparatus having the structure for suppressing the powder generation, first, the reaction by-products in the gas discharged from the processing chamber 101 flow into the preceding stage pipe 106 through the turbo molecular pump TMP and the angle valve AV. The front stage pipe 106 is composed of a center connection pipe 106a and a plurality of intermediate connection pipes 106b. Therefore, the gas (including the reactants) discharged from the processing chamber 101 is directly discharged to the front stage pipe 106, or directly discharged to the front stage pipe 106 through the respective intermediate connecting pipes 106b, the center connecting pipe 106a, and the vertical connecting pipe 106c.

At this time, the front stage pipe 106 is provided with an internal heater 114 and a heating jacket 112. The internal heater 114 and the heating jacket 112 can prevent the reaction by-products in the above gas from being vapor-deposited inside the foreline pipe 106. Here, the heating jacket 112 is indirectly heated outside the front duct 106, and the internal heater 114 maintains the internal temperature of the preceding duct 106 at about 170 ° C, so that it can be adjusted to powder. The condition of vaporizing the inner diameter of the foreline pipe 106. Thereby, powder evaporation is prevented from being inside the foreline pipe 106.

Here, the first temperature sensor 124 disposed in the foreline conduit 106 maintains the internal temperature of the foreline conduit 106 at a set temperature, such as about 170 °C. Also, the second temperature sensor 126 adjusts the temperature level of the heating jacket 112 or the internal heater 114 to prevent overheating of the temperature of the preceding duct 106.

At the same time, the heating duct 110 is provided in the exhaust duct 108, and the functions and functions of the heating jacket 112 and the internal heater 114 of the heating element 110 are the same as those described above.

In summary, the heating assembly 110 of the present invention is disposed in the foreline conduit 106 and the exhaust conduit 108, respectively. First, it is directly and indirectly heated by the heating element 110 of the preceding stage 106, and then by the heating element 110 of the exhaust duct 108, thereby effectively suppressing powder generation.

The preferred embodiments of the present invention have been illustrated and described above, and the present invention is not limited to the above-described embodiments, as long as it is a person of ordinary skill in the art to which the present invention pertains, without departing from the gist of the invention as claimed. Various modifications are possible within the scope.

100‧‧‧Semiconductor manufacturing equipment

101‧‧‧Connecting processing chamber

102‧‧‧vacuum pump

104‧‧‧ scrubber

106‧‧‧Pre-stage pipeline

106a‧‧‧Center connecting tube

106b‧‧‧Intermediate connecting tube

106c‧‧‧Vertical connecting tube

108‧‧‧Exhaust pipe

AV‧‧‧ angle valve

TMP‧‧‧ turbomolecular pump

Claims (9)

A semiconductor manufacturing apparatus having a function of suppressing powder generation, comprising a front stage pipe (106) for connecting between a processing chamber (101) and a vacuum pump (102), and for connecting the vacuum pump (102) and the scrubber (104) The exhaust duct (108) is characterized in that the semiconductor manufacturing apparatus having the function of suppressing powder generation includes heating units (110) respectively disposed in the front stage duct (106) and the exhaust duct (108). A semiconductor manufacturing apparatus having a powder suppressing function according to the first aspect of the invention, wherein the front stage pipe (106) comprises: a center connecting pipe (106a), and a pair of L-shaped intermediate connecting pipes (106b), Forming a right angle with the center connecting pipe (106a), and respectively connecting with both ends of the center connecting pipe (106a), and a vertical connecting pipe (106c) provided in one of the intermediate connecting pipes (106b); The intermediate connecting pipes (106b) described above are arranged in line with each other. A semiconductor manufacturing apparatus having a powder suppressing function according to the first aspect of the invention, wherein the heating unit (110) comprises: a heating jacket (112) for covering the front stage pipe (106) and the exhaust pipe (108) the way the outer surface is set, and An internal heater (114) is disposed inside the front duct (106) and the exhaust duct (108); the internal heater (114) includes: a male terminal (116) and a female terminal (118), and an insulating material ( 120), covering the male terminal (116) and the female terminal (118) to insulate the male terminal (116) from the female terminal (118), and the magnesium metal protection tube (122), compressing and coating the insulating material The outer peripheral surface of (120); the internal heater is a coil type. A semiconductor manufacturing apparatus having a powder suppressing function according to the third aspect of the invention, wherein the insulating material (120) has a density of 2 g/cm ² to 3 g/cm ² . A semiconductor manufacturing apparatus having a powder suppressing function according to the fourth aspect of the invention, wherein the surface of the inside and the outside of the magnesium metal protection tube (122) is further coated with chromium nitride. A semiconductor manufacturing apparatus having a powder suppressing function according to the fifth aspect of the invention, wherein the inner and outer surfaces of the magnesium metal protective tube (122) are further coated with diamond-like carbon. A semiconductor manufacturing apparatus having a powder suppressing function according to claim 6, wherein the male terminal (116) and the female terminal (118) simultaneously compress the insulating material (120) and the magnesium metal protective tube (122) . The powder having the suppression powder according to any one of claims 2 to 7 A semiconductor manufacturing device that produces a function, wherein a second temperature sensor (126) is further provided, and the second temperature sensor (126) is directed to the front stage conduit (106) and the exhaust duct (108) The hollow interior is exposed to maintain the interior of the front stage conduit (106) and the exhaust duct (108) at an appropriate temperature. A semiconductor manufacturing apparatus having a function of suppressing powder generation according to any one of claims 2 to 7, wherein a first temperature sensor (124) is further provided, the first temperature sensor ( 124) disposed on the front stage conduit (106) and the exhaust duct (108) for preventing overheating of the front stage duct (106) and the exhaust duct (108).