KR20070030615A - Exhaust unit of semiconductor diffusion equipment - Google Patents

Abstract

An exhaust unit of a semiconductor diffusion device is provided. The exhaust unit includes a gas exhaust pipe and a heat generating unit integrally formed on an outer surface of the gas exhaust pipe, wherein the heat generating unit includes a heat generating unit body and a heating coil installed in the heat generating body.

Description

EXHAUST UNIT OF SEMICONDUCTOR DIFFUSION EQUIPMENT

1 is a cross-sectional view showing a conventional semiconductor diffusion equipment.

FIG. 2 is an enlarged perspective view showing the heating jacket shown in FIG. 1.

3 is a cross-sectional view showing a semiconductor diffusion apparatus employing the exhaust unit of the present invention.

4 is a perspective view showing an embodiment of an exhaust unit according to an aspect of the present invention.

5 is a perspective view showing another embodiment of an exhaust unit according to an aspect of the present invention.

6 is a perspective view showing an embodiment of an exhaust unit according to another aspect of the present invention.

FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 6.

8 is a perspective view showing another embodiment of an exhaust unit according to another aspect of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust unit of a semiconductor diffusion device, and more particularly, to an exhaust unit of a semiconductor diffusion device having a gas exhaust pipe in which a heating coil is built, and which enables a gas exhaust pipe not heated.

In general, semiconductor devices are manufactured by repeatedly performing or selectively performing a manufacturing process such as photography, etching, diffusion, ion implantation, metal deposition, and chemical vapor deposition.

One of the processes frequently performed in such a manufacturing process is an ion implantation process and a diffusion process of infiltrating P-type or N-type impurities into a wafer, forming a specific film, and growing a specific film.

The diffusion process is a method of thermally decomposing a gaseous compound to cause chemically reacted ions of a decomposed gaseous compound with a semiconductor substrate, and is used to form an oxide film or an epi layer on a semiconductor substrate. This diffusion process is mainly carried out in a vertical reactor having advantages such as excellent uniformity, repeatability and low defect rate.

1 shows a semiconductor diffusion apparatus having a conventional vertical reactor. FIG. 2 is an enlarged perspective view showing the heating jacket shown in FIG. 1.

1 and 2, the vertical reactor 100 has a dome-shaped outer tube 110, and the outer side of the outer tube 110 is optional to form a high temperature inside the reactor 100. The heater 40 is heated to be installed, the inner tube 120 of the cylindrical shape is open at the top of the outer tube 110 is disposed.

The inner tube 120 and the outer tube 110 are configured to be supported by the flange 140.

Moreover, the boat 20 formed so that the some wafer W may be loaded from the lower side of the flange 140 mentioned above is installed by the loader part 22 so that lifting, lowering, and rotation is possible, The loading and unloading of the wafer W into the inner tube 120 is performed by the downward movement.

And, inside the inner tube 120, as shown in Figure 1, the gas supply line 130 for supplying the process gas extends a predetermined length from the lower portion of the inner tube 120 in the center direction again It is installed in a shape that is vertically bent in an upward direction to approach an inner wall of the inner tube 120.

Meanwhile, a gas exhaust pipe 150 connected to a vacuum pump (not shown) is mounted at a predetermined position of the flange 140 for supporting the inner tube 120 and the outer tube 120, and thus the inside of the vertical reactor 100 is mounted. It is formed in a vacuum state.

According to this configuration, the boat 20 loaded with a plurality of wafers W is loaded to be positioned in the inner tube 120, and is connected to a vertical reactor through a gas exhaust pipe 150 connected to a vacuum pump (not shown). After forming the inside of the vacuum state 100, and a predetermined process temperature through the heater 40, the diffusion process is performed by a series of processes for supplying the process gas through the gas supply pipe 130. .

The interior of the conventional vertical reactor 100 having the configuration as described above forms a temperature of about 650 ℃ to 770 ℃ through the heating of the heater 40.

After the process, the waste gas remaining in the vertical reactor 100 is exhausted to the outside through the gas exhaust pipe 150.

At this time, since the temperature inside the gas exhaust pipe 150 is relatively lower than the internal temperature of the vertical reactor 100, the hot gas discharged is cooled to a predetermined temperature and discharged.

Therefore, when the waste gas is exhausted through the gas exhaust pipe 150 in a state where the temperature difference occurs as described above, powder is generated inside the gas exhaust pipe 150 and on the inner wall of the gas exhaust pipe 150. Not only does not exhaust the exhaust gas to the outside is deposited smoothly, there is a problem that the flow path of the gas exhaust pipe 150 is blocked.

Therefore, the gas exhaust pipe 150 is provided with a heating jacket 160 on the outer surface of the gas exhaust pipe 150 in order to prevent the generation of powder, the interior of the vertical reactor 100 and the gas exhaust pipe ( By compensating the temperature difference with the 150 to some extent, it is possible to prevent the powder from being generated inside the gas exhaust pipe 150 and the powder deposited on the inner wall of the gas exhaust pipe 150.

1 and 2, there is shown a heating jacket 160 is wound on the outer surface of the gas exhaust pipe 150, the heating jacket 160 is a plurality of bundles on the outer surface of the gas exhaust pipe 150 Use (180) to wrap and bundle.

However, when fixing the heating jacket 160 as described above, the portion of the bundle strap 180 of the heating jacket 160 is fixed to the outer surface of the gas exhaust pipe 150, a plurality of bundle straps 180 The heating jacket 160 between the) is opened to the outside of the gas exhaust pipe 150 so that a gap (A) is generated, thereby preventing heating in close contact with the outer surface of the gas exhaust pipe 150.

Therefore, the entire surface of the outer surface of the gas exhaust pipe 150 is not uniformly heated, there is a problem that the powder and particles (particle) occurs.

And, in the case of replacing the heating jacket 160 to check the equipment, by cutting a plurality of bundle straps 180 which is a means for fixing the heating jacket 160 to the outer surface of the gas exhaust pipe 150 and discarded Should be used, since a new plurality of bundle straps 180 must be used to re-install the heating jacket 160, equipment maintenance cost increases.

Therefore, the present invention has been made in order to solve the above problems, the object of the present invention is to prevent the generation of powder inside the gas exhaust pipe, it can be easily removed or reinstalled when the heating is not normal An exhaust unit of a semiconductor diffusion device is provided.

The present invention provides an exhaust unit of a semiconductor diffusion equipment.

The exhaust unit according to an aspect of the present invention includes a gas exhaust pipe and a heat generating unit integrally formed on an outer surface of the gas exhaust pipe.

In one embodiment according to an aspect of the present invention, the heating unit is provided with a heating unit body, and a heating coil provided on the heating unit body, the heating coil is the heat generation along the direction of the outer surface of the gas exhaust pipe It may be built into the body.

In another embodiment according to an aspect of the present invention, the heating unit is provided with a heating unit body and a heating coil provided in the heating unit body, the heating coil is in the heating unit body along the longitudinal direction of the gas exhaust pipe Can be implicit.

In another embodiment of the present invention, a temperature sensor for measuring the heating temperature of the heating coil in real time, a control unit electrically connected to the temperature sensor, comparing the heating temperature and a predetermined reference temperature with each other, It may be further connected to the control unit, and may further include an alarm for generating an alarm when the heating temperature is lower than the reference temperature.

According to another aspect of the present invention, the exhaust unit includes a plurality of gas exhaust pipes connected to each other, and heating coils respectively installed in the gas exhaust pipes.

In one embodiment according to another aspect of the present invention, the heating coil may be built in the gas exhaust pipe along a direction that is wound out based on the outer surface of the gas exhaust pipe.

In another embodiment according to another aspect of the present invention, the heating coil may be built in the gas exhaust pipe along the longitudinal direction of the gas exhaust pipe.

In another embodiment of the present invention, the temperature sensor for measuring the heating temperature of each of the heating coils in the gas exhaust pipe in real time, and electrically connected to the temperature sensor, and is preset with the heating temperature A control unit for comparing the reference temperature with each other, the alarm is electrically connected to the control unit, and generates an alarm when the heating temperature of at least one of the heating coils in the gas exhaust pipe lower than the reference temperature It may be further provided.

Hereinafter, embodiments of the exhaust unit of the semiconductor diffusion apparatus of the present invention will be described with reference to the accompanying drawings.

First, with reference to Figures 3 to 5, embodiments of the exhaust unit of the semiconductor diffusion equipment of the present invention will be described.

3 is a cross-sectional view showing a semiconductor diffusion apparatus employing the exhaust unit of the present invention. 4 is a perspective view showing an embodiment of an exhaust unit according to an aspect of the present invention. 5 is a perspective view showing another embodiment of an exhaust unit according to an aspect of the present invention.

Exhaust unit according to an aspect of the present invention is preferably adopted in the vertical reactor 210 of the semiconductor diffusion equipment shown in FIG.

An embodiment of the exhaust unit will be described with reference to FIGS. 3 and 4.

The exhaust unit 300 according to the exemplary embodiment includes a hollow gas exhaust pipe 310 having a predetermined length and a heat generating unit 320 integrally formed on an outer surface of the gas exhaust pipe 300.

Here, the gas exhaust pipe 310 and the heat generating portion 320 may be formed of a stainless material, the heat generating portion 320 is integral with each other by a bonding method such as welding on the outer surface of the gas exhaust pipe (310). It is preferable to make.

The heating unit 320 may include a heating unit body 321 integrally formed with an outer surface of the gas exhaust pipe 310, and a heating coil 322 internal to the heating unit body 321. Here, the heating coil 322 may be supplied with power from the outside to form a predetermined high temperature.

In addition, the heating coil 322 may be installed in the heat generating body 321 in a direction of surrounding the outer surface of the gas exhaust pipe 310.

On the other hand, the heating coil 322 is electrically connected to the temperature sensor 350 for detecting the heating temperature of the heating coil 322 in real time. The temperature sensor 350 may be electrically connected to the controller 360, and the controller 360 may compare the detected heating temperature with a preset reference temperature.

In addition, the controller 360 may be electrically connected to an alarm 370 for notifying an alarm when the detected heating temperature is lower than the reference temperature.

In this case, the reference temperature is preferably a minimum temperature such that the heating coil 322 is damaged and thus the gas exhaust pipe 310 cannot be heated. For example, the reference temperature may be room temperature.

It will be described the operation and effect of one embodiment according to an aspect of the present invention having the configuration as described above.

Referring to FIG. 3, a plurality of wafers W loaded on the boat 20 are diffused by a process gas supplied into the vertical reactor 210. At this time, the interior of the vertical reactor 210 is a state in which a high temperature atmosphere is formed by the heating of the heater 40. For example, the high temperature atmosphere may be about 650 to 770 ° C.

After performing the diffusion process in such a high temperature atmosphere, the hot waste gas remaining in the vertical reactor 210 is exhausted through the interior of the gas exhaust pipe (310).

Here, the heat generator 320 integrally provided on the outer surface of the gas exhaust pipe 310 may heat the gas exhaust pipe 310 to a high temperature.

First, the power applying unit (not shown) may apply power to the heating coil 322 built into the heat generating body 321 in a direction of outer the outer surface of the gas exhaust pipe 310.

The heating coil 322 is installed in the heating unit body 321, the heating unit body 320 is formed integrally with the outer surface of the gas exhaust pipe 310, the heating unit body 321 and the Since the gas exhaust pipe 310 is made of stainless material, the heat generated from the heating coil 322 may be easily transferred to the gas exhaust pipe 310.

In addition, since the heating coil 322 is installed in the interior of the heating unit body 321 at a uniform interval as described above, a gap between the outer surface of the gas exhaust pipe 310 and the heating unit body 321. This does not happen.

Therefore, since the heating unit 320 and the gas exhaust pipe 310 are integrally formed so that there is no gap to be exposed to the outside, when the heating coil 322 heats the gas exhaust pipe 310, It is possible to prevent the heat loss of the furnace.

Therefore, since the waste gas having a high temperature is exhausted to the outside through the inside of the gas exhaust pipe 310 heated to a high temperature, a solid material such as powder is not easily deposited on the inner wall of the gas exhaust pipe 310, and furthermore, The hollow of the exhaust pipe 310 may be blocked to prevent the facility from being damaged.

On the other hand, when the gas exhaust pipe 310 is repeatedly heated through the heat generating unit 320 as described above, the heating coil 322 may be disconnected or broken.

In this case, the temperature sensor 350 as shown in FIG. 4 may be electrically connected to the heating coil 322 to sense a heating temperature of the heating coil 322 in real time. The detected heating temperature may be transmitted as an electrical signal to the controller 360 which is electrically connected.

Subsequently, the controller 360 compares a preset reference temperature with the detected heating temperature, and transmits an electrical signal to the alarm 370 when the detected heating temperature is lower than the reference temperature.

For example, if the reference temperature is room temperature and the detected heating temperature is lower than room temperature, the heating coil 322 to be heated may be determined to be disconnected or broken.

Therefore, the alarm 370 receiving the electrical signal from the control unit 360 may generate an alarm indicating that the heating coil 322 is disconnected or damaged.

Therefore, by generating the alarm as described above, replacing the gas exhaust pipe 310, the heating coil 322 is damaged with a new gas exhaust pipe 310, the process accident due to the powder generation in the gas exhaust pipe 310 is not disclosed. To prevent it.

Next, another embodiment of an exhaust unit according to an aspect of the present invention will be described with reference to FIG. 5.

3 and 5, the exhaust unit 300 according to the other embodiment may be adopted in the vertical reactor 210 in the embodiment as in the embodiment.

The exhaust unit 300 may include a hollow gas exhaust pipe 310 and a heat generating part 330 integrally formed on an outer surface of the gas exhaust pipe 310.

The heating unit 330 is provided with a heating unit body 331 and the heating coil 332 provided inside the heating unit body 331, the heating coil 332 is the longitudinal direction of the gas exhaust pipe 310 In accordance with the even intervals may be built in the heating unit body 331.

In addition, as in the exemplary embodiment, the heating coil 331 may include a temperature detector 350, a controller 360, and an alarm 370 that detect a heating temperature of the heating coil 331 in real time. Can be.

Accordingly, the heating coil 332 may heat the gas exhaust pipe 310 without a gap exposed to the outside between the heat generating body 331 and the gas exhaust pipe 310 as in the embodiment. Can be.

On the other hand, if the heating coil 332 is disconnected or broken inside the heat generating body 331, the heating is not performed, the temperature of the gas exhaust pipe 310 is lowered, and eventually, hot waste gas A portion of the gas exhaust pipe 310 may be deposited as an inner wall of the powder.

In this case, since the heating coils 332 are built in the longitudinal direction of the gas exhaust pipe 310 inside the heat generating body 331, the powder is disposed in a space between the heating coils 332. It is deposited on the hollow inner wall of the gas exhaust pipe 310 located. That is, the powder may be deposited on the inner wall along the longitudinal direction of the gas exhaust pipe 310.

Therefore, it is possible to secure a certain amount of space for the exhaust gas to flow.

On the other hand, the temperature sensor 350 detects the heating temperature of the heating coil 332 and transmits an electrical signal to the control unit 360, the control unit 360 is the reference temperature as in the embodiment And the detected heating temperature are compared with each other, and when the detected heating temperature is lower than the reference temperature, an electrical signal may be transmitted to the alarm 370, and the alarm 370 may generate an alarm.

Therefore, it can be confirmed that the heating coil 332 is disconnected or broken, and can be easily replaced with a new gas exhaust pipe 310.

Next, embodiments of the exhaust unit of the semiconductor diffusion apparatus of the present invention will be described with reference to FIGS. 6 to 8.

6 is a perspective view showing an embodiment of an exhaust unit according to another aspect of the present invention. FIG. 7 is a cross-sectional view taken along the line II ′ of FIG. 6. 8 is a perspective view showing another embodiment of an exhaust unit according to another aspect of the present invention.

Exhaust unit 390 according to another aspect of the present invention is preferably employed in a vertical reactor 210 (see FIG. 3) of a semiconductor diffusion facility as shown in FIG.

6 and 7, an embodiment of the exhaust unit 390 will be described.

Referring to FIG. 6, the exhaust unit 390 includes a plurality of gas exhaust pipes 340 connected to each other, and heating coils 341 internally installed in the gas exhaust pipes 340, respectively.

In addition, the heating coil 341 may be installed in the gas exhaust pipe 340 along a direction that is wound around the outer surface of the gas exhaust pipe 340.

In addition, a temperature sensor 351 electrically connected to each of the heating coils 341 to sense a heating temperature of the heating coils 341, and a controller 360 electrically connected to the temperature sensor 351. And an alarm 370 and an indicator 380 electrically connected to the control unit 360.

Actions and effects of one embodiment of the exhaust unit having the configuration as described above are as follows.

Referring to FIG. 6, the heating coil 341 is installed inside the gas exhaust pipe 340, and each of the gas exhaust pipes 340 configured as described above may be connected to each other.

Since the heating coil 341 is installed in the direction in which the outer surface of the gas exhaust pipe 340 is enclosed inside the gas exhaust pipe 340, the heating coil 341 receives power from the outside and the gas exhaust pipe 340. The gas exhaust pipe 340 may be heated at uniform intervals through the outer surface of the).

In addition, the gas exhaust pipes 340 may be fastened to each other using fastening means having bolts and nuts (not shown).

In addition, when any one of the heating coils 341 of the heating coils 341 in the gas exhaust pipes 340 is disconnected or broken, only the corresponding gas exhaust pipe 340 is a new gas exhaust pipe 340. ) Can be replaced.

The disconnection and damage of the heating coil 341 may be determined as follows.

The temperature sensor 351 may detect a heating temperature of each of the heating coils 341 which are heated by receiving power from the outside in real time. The temperature sensor 351 may transmit the detected heating temperature to the controller 360 as an electrical signal.

The controller 360 compares a preset reference temperature with the detected heating temperature, and when the heating temperature detected by any one of the heating coils 341 is lower than the reference temperature, the alarm 370. And an electrical signal to the indicator 380.

Accordingly, the alarm 370 generates an alarm indicating that any one of the heating coils 341 is broken or broken, and the indicator 380 removes any one of the broken or broken hitch coils 341. Can be displayed.

Therefore, the gas exhaust pipe 340 in which the heating coil 341 is disconnected by the indicator 380 may be known, and only the gas exhaust pipe 340 corresponding thereto may be transferred to the new gas exhaust pipe 340. It can be replaced.

Next, another embodiment of the exhaust unit 390 will be described with reference to FIGS. 6 and 8.

The exhaust unit 390 has the same gas exhaust pipes 340 as the configuration of the embodiment, and has heating coils 342 built into the gas exhaust pipes 340, respectively, the heating coil 342 The gas exhaust pipe 340 may be installed in the gas exhaust pipe 340 at equal intervals from each other along the longitudinal direction of the gas exhaust pipe 340.

The heating coil 342 may be electrically connected to the temperature sensor 351, the controller 360, the alarm 370, and the indicator 380 as illustrated in FIG. 6.

The operation and effects of the other embodiment of the exhaust unit 390 having the configuration as described above may be the same as the effect of the embodiment, the other operations and effects are as follows.

If the heating coil 342 is disconnected or broken inside the gas exhaust pipe 340, the temperature of the gas exhaust pipe 340 is lowered, so that a part of the hot waste gas is discharged from the gas exhaust pipe 340. Powder may be deposited on the inner wall of the interior of the.

In this case, since the heating coil 342 is installed in the gas exhaust pipe 340 at equal intervals along the longitudinal direction of the gas exhaust pipe 340, the powder is disposed in the space between the heating coils 342. It may be deposited at a uniform interval on the inner wall of the hollow of the gas exhaust pipe 340 is located. That is, the powder may be deposited along the longitudinal direction of the gas exhaust pipe 340.

Therefore, it is possible to secure a space for the exhaust gas to flow.

On the other hand, the temperature sensor 351 detects the heating temperature of each of the heating coils 342 in real time and transmits an electrical signal to the control unit 360, the control unit 360 as in the embodiment By comparing the reference temperature and the detected heating temperature with each other, if the heating temperature detected by any one of the heating coils 342 is lower than the reference temperature, an electrical signal may be transmitted to the alarm 370. The alarm 370 may generate an alarm.

In addition, the control unit 360 transmits an electrical signal to the indicator 380 to visually check the gas exhaust pipe 340 in which the heating coil 342 which is disconnected among the heating coils 342 is installed. The gas exhaust pipe 340 may be replaced with a new gas exhaust pipe 340.

According to the present invention, a heater coil heated by receiving power from the outside is installed inside a hollow gas exhaust pipe connected to a vertical reactor, so that the heater coil is integrated with the gas exhaust pipe. The entire heat is easily heated, and when the heater coil is disconnected and broken, it is easily checked to easily replace with a new gas exhaust pipe.

In addition, by providing a plurality of gas exhaust pipes connected to each other, each heater coil is built-in, by replacing only the gas exhaust pipe in which the heater coil in which the abnormality is built, there is an effect of reducing the overall cost of the equipment.

Claims (6)

Gas exhaust pipe; And An exhaust unit of a semiconductor diffusion equipment comprising a heat generating unit integrally formed on the outer surface of the gas exhaust pipe. The method of claim 1, The heating unit includes a heating unit body and a heating coil provided on the heating unit body, wherein the heating coil is installed in the heating unit body in a direction outside the outer surface of the gas exhaust pipe. Exhaust Unit. The method of claim 1, The heat generating unit includes a heat generating unit body and a heating coil provided in the heat generating unit body, wherein the heating coil is installed in the heat generating unit body along the longitudinal direction of the gas exhaust pipe. A plurality of gas exhaust pipes connected to each other; And An exhaust unit of a semiconductor diffusion device comprising heating coils each built into the gas exhaust pipes. The method of claim 4, wherein The heating coil is exhaust unit of the semiconductor diffusion equipment, characterized in that the gas exhaust pipe is installed in the direction along the outer periphery of the gas exhaust pipe. The method of claim 4, wherein And the heating coil is installed in the gas exhaust pipe along a length direction of the gas exhaust pipe.

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