KR20060089532A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment Download PDF

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KR20060089532A
KR20060089532A KR1020050010802A KR20050010802A KR20060089532A KR 20060089532 A KR20060089532 A KR 20060089532A KR 1020050010802 A KR1020050010802 A KR 1020050010802A KR 20050010802 A KR20050010802 A KR 20050010802A KR 20060089532 A KR20060089532 A KR 20060089532A
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exhaust line
heating
semiconductor manufacturing
manufacturing equipment
tube
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설현수
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삼성전자주식회사
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/50—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment specially adapted for specific body parts; specially adapted for specific clinical applications
    • A61B6/502—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment specially adapted for specific body parts; specially adapted for specific clinical applications for diagnosis of breast, i.e. mammography
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/44—Constructional features of apparatus for radiation diagnosis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/359—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources

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Abstract

본 발명은 반도체 제조설비에 관한 것으로, 공정챔버에서 공정 진행 후 생성되는 잔류가스를 배기하는 배기라인에 잔류가스가 고체화되어 파우더로 생성되는 것을 방지하기 위한 히팅수단을 접착시켜 일체형으로 구성함으로써, 배기라인의 외면을 히팅수단으로 하여금 틈이 없도록 밀착시킨다.The present invention relates to a semiconductor manufacturing equipment, and by heating the means for preventing the residual gas is solidified to form a powder to the exhaust line for exhausting the residual gas generated after the process proceeds in the process chamber, by exhausting The outer surface of the line is brought into close contact with the heating means so that there is no gap.

Description

반도체 제조설비{semiconductor manufacturing equipment} Semiconductor manufacturing equipment             

도 1은 본 발명에 따른 반도체 제조설비의 구성을 개략적으로 도시한 단면도이다.1 is a cross-sectional view schematically showing the configuration of a semiconductor manufacturing equipment according to the present invention.

도 2는 본 발명에 따른 반도체 제조설비의 배기라인의 구성을 도시한 단면도이다.Figure 2 is a cross-sectional view showing the configuration of the exhaust line of the semiconductor manufacturing equipment according to the present invention.

**주요 부분에 대한 부호의 설명**** Description of the code for the main parts **

10 : 공정튜브10: process tube

20 : 이너튜브20: inner tube

30 : 아우터튜브30: outer tube

40 : 히터40: heater

50 : 매니폴드50: manifold

60 : 공정가스공급라인60: process gas supply line

100 : 배기라인100: exhaust line

110 : 히팅자켓110: heating jacket

120 : 전열선120: heating wire

130 : 온도감지센서130: temperature sensor

140 : 제어부140: control unit

150 : 표시장치150: display device

160 : 경고발생장치160: warning device

본 발명은 반도체 제조설비에 관한 것으로, 보다 상세하게는 반도체 제조설비의 배기라인에 관한 것이다.The present invention relates to a semiconductor manufacturing equipment, and more particularly to an exhaust line of the semiconductor manufacturing equipment.

일반적으로, 반도체 소자는 웨이퍼 상에 포토리소그래피, 식각, 애싱, 확산, 화학기상증착, 이온주입 및 금속증착 등의 공정을 반복적으로 수행하여 적어도 하나 이상의 도전층, 반도체층, 부도체층 등을 조합되게 적층하는 과정을 통해 만들어진다. In general, a semiconductor device repeatedly performs a process such as photolithography, etching, ashing, diffusion, chemical vapor deposition, ion implantation, and metal deposition on a wafer to combine at least one conductive layer, semiconductor layer, insulator layer, or the like. It is made through the process of lamination.

상술한 반도체 소자 제조공정 중 식각, 애싱, 확산, 화학기상증착, 금속증착 등의 공정은 웨이퍼가 놓이는 공정챔버 내부에 공정가스를 공급하고, 이들 공정가스를 플라즈마 상태로 변환시키거나 고온 분위기에 있도록 하여 웨이퍼 상에 원하는 반응이 이루어지도록 하는 것이다.In the semiconductor device manufacturing process described above, processes such as etching, ashing, diffusion, chemical vapor deposition, and metal deposition may supply process gases into a process chamber in which a wafer is placed, and convert these process gases into a plasma state or in a high temperature atmosphere. To achieve the desired reaction on the wafer.

한편, 공정이 수행된 후에는 공정챔버의 내부에는 잔류가스가 발생되며 이 잔류가스들을 공정챔버의 외부로 배기시키게 되는데, 이 잔류가스 중에는 소정온도 이상으로 가열된 상태가 유지되지 못하면 파우더 형태로 고체화 되는 것이 있다. On the other hand, after the process is performed, residual gas is generated inside the process chamber, and the residual gas is exhausted to the outside of the process chamber. If the heated state is not maintained above a predetermined temperature, the solidified into a powder form. There is something.

따라서, 이러한 잔류가스들을 배기시킬 때 이들이 배기라인 내부에서 고체화되어 침적되는 것을 방지하기 위하여 배기라인에 히팅수단 즉, 전열선이 내장된 히팅테이프를 감싸게 된다. Accordingly, when exhausting the residual gases, a heating means, that is, a heating tape in which a heating wire is embedded, is enclosed in the exhaust line to prevent them from solidifying and depositing inside the exhaust line.

이때, 배기라인을 감싸는 히팅테이프는 다수의 케이블 타이를 이용하여 히팅테이프의 외면을 감싼 뒤 이를 묶어 고정시킨다.At this time, the heating tape surrounding the exhaust line is wrapped around the outer surface of the heating tape using a plurality of cable ties and then tied and fixed.

그러나, 전술한 바와 같이 고정하는 경우, 케이블 타이로 고정된 히팅 테이프는 배기라인의 외면에 정확히 밀착되지만, 케이블 타이 사이의 히팅테이프는 벌어지게 되어 틈이 발생되고 이로 인해 배기라인을 효율적으로 가열하지 못하게 된다.However, in the case of fixing as described above, the heating tape fixed with the cable tie is closely adhered to the outer surface of the exhaust line, but the heating tape between the cable ties is opened so that a gap is generated, which does not heat the exhaust line efficiently. I can't.

따라서, 히팅테이프가 벌어져 틈이 발생된 배기라인은 온도가 감소되며, 온도감소에 따른 파우더가 생성되는 문제점이 발생된다.Therefore, the exhaust tape line is generated by the gap between the heating tape is reduced the temperature, there is a problem that the powder is generated according to the temperature decrease.

따라서, 본 발명은 상기에 상술한 문제점을 해결하기 위해서 안출된 것으로써, 본 발명의 목적은 배기라인의 외면을 감싸는 히팅수단을 배기라인에 접착시켜 배기라인과 일체형화함으로써, 배기라인의 내부에서 파우더의 생성을 방지하는데 있다.
Accordingly, the present invention has been made to solve the above-described problems, the object of the present invention is to bond the heating means surrounding the outer surface of the exhaust line to the exhaust line to integrate with the exhaust line, so that the inside of the exhaust line To prevent the production of powder.

이와 같은 목적을 구현하기 위한 본 발명에 따른 반도체 제조설비는 공정튜 브와 연결되며 상기 공정튜브에서 소정의 공정이 진행되어 생성된 잔류가스를 배기하는 배기라인 및 상기 배기라인의 외면에 밀착되도록 접착되는 히팅수단을 포함한다.The semiconductor manufacturing equipment according to the present invention for realizing such an object is connected to a process tube and adhered to be in close contact with an exhaust line for exhausting residual gas generated by a predetermined process in the process tube and an outer surface of the exhaust line. And heating means.

그리고, 상기 히팅수단은 외부로부터 전원을 인가받아 전기적으로 발열하는 전열선이 내장된 히팅자켓인 것이 바람직하다.In addition, the heating means is preferably a heating jacket with a heating wire that is electrically generated by receiving power from the outside.

또한, 상기 히팅수단에는 온도감지센서가 장착되어 배기라인의 온도를 감지하는 것이 바람직하다.In addition, the heating means is preferably equipped with a temperature sensor to detect the temperature of the exhaust line.

이하, 도면을 참조하여 본 발명에 따른 반도체 제조설비의 배기라인의 구성에 대해 설명하면 다음과 같다.Hereinafter, the configuration of the exhaust line of the semiconductor manufacturing equipment according to the present invention with reference to the drawings.

한편, 본 발명에서는 배기라인이 사용되는 여러공정 중에서 화학기상증착공정과 확산공정이 수행되는 설비 즉, 열처리설비를 예로 들어 설명하기로 한다.On the other hand, the present invention will be described taking as an example the equipment that the chemical vapor deposition process and the diffusion process is performed among the various processes in which the exhaust line is used as an example.

도 1은 열처리설비의 구성을 개략적으로 도시한 단면도이고, 도 2는 도 1의 배기라인의 구성을 도시한 단면도이다.1 is a cross-sectional view schematically showing the configuration of the heat treatment equipment, Figure 2 is a cross-sectional view showing the configuration of the exhaust line of FIG.

한편, 비록 다른 도면에 속하더라도 동일한 구성요소에는 동일한 부호를 부여하였음을 주의하여야 한다.On the other hand, it should be noted that the same reference numerals are given to the same elements even though they belong to different drawings.

도 1을 참조하면, 열처리설비는 웨이퍼를 수용하여 열처리공정을 실시하기 위한 공정튜브(10)가 구비된다. 공정튜브(10)는 하단이 개방된 원통형상으로 이너튜브(Inner tube)(20)와 아우터튜브(Outer tube)(30)로 이루어진 이중관 구조이다.Referring to FIG. 1, a heat treatment facility includes a process tube 10 for receiving a wafer and performing a heat treatment process. The process tube 10 has a double tube structure formed of an inner tube 20 and an outer tube 30 in a cylindrical shape having an open bottom.

그리고, 이 아우터튜브(30)의 외측에는 공정튜브(10)의 내부를 고온으로 형성하기 위해 선택적으로 가열하는 히터(40)가 설치된다.And the outer side of this outer tube 30 is provided with a heater 40 for selectively heating in order to form the inside of the process tube 10 at a high temperature.

또한, 공정튜브(10)의 하부에는 이너튜브(20)와 아우터튜브(30)를 지지하기 위한 매니폴드(50)가 구비되며, 이 매니폴드(50)에는 공정가스를 공정튜브(10) 내부로 주입시키기 위하여 공정튜브(10) 안쪽으로 관통된 공정가스공급라인(60)이 마련됨과 동시에 공정튜브(10)의 내부를 진공배기하도록 도시되지 않은 진공펌프와 연결된 배기라인(100)이 마련된다.In addition, a lower part of the process tube 10 is provided with a manifold 50 for supporting the inner tube 20 and the outer tube 30, and the manifold 50 has a process gas inside the process tube 10. A process gas supply line 60 penetrates into the process tube 10 to be injected into the process tube 10, and an exhaust line 100 connected to a vacuum pump (not shown) is provided to evacuate the inside of the process tube 10. .

한편, 소정의 공정 진행 후 공정튜브(10)에서 생성되는 잔류가스를 배기시키는 배기라인(100)을 통해 배기되는 잔류가스가 배기라인(100)의 내부에서 고체화되는 것을 방지하기 위한 히팅수단 즉, 히팅자켓(110)(Heating jacket)이 배기라인(100)의 외면 전체를 덮어 균일하게 가열되도록 감싸게 된다.On the other hand, heating means for preventing the residual gas exhausted through the exhaust line 100 for exhausting the residual gas generated in the process tube 10 after the predetermined process is solidified inside the exhaust line 100, The heating jacket 110 covers the entire outer surface of the exhaust line 100 so as to be uniformly heated.

도 2를 참조하면, 히팅자켓(110)은 그 내부에 외부의 전원부(미도시)로부터 전원을 인가받아 전기적으로 발열하는 전열선(120)이 내장되어 배기라인(100)을 가열하게 되고, 접착제와 같은 접착수단을 이용하여 배기라인(100)에 접착하여 일체형으로 이루어지게 한다.Referring to FIG. 2, the heating jacket 110 has a heating wire 120 that is electrically heated by receiving power from an external power supply unit (not shown) and heats the exhaust line 100 therein. By using the same adhesive means to adhere to the exhaust line 100 to be made in one piece.

여기에서, 히팅자켓(110)은 내열성재질로 이루어지는 것이 바람직하다.Here, the heating jacket 110 is preferably made of a heat resistant material.

그리고, 배기라인(100)의 외면을 감싼 히팅자켓(110) 상에는 별도의 온도감지센서(130)가 장착되며, 온도감지센서(130)는 제어부(140)와 접속되어 자동적으로 제어되고 표시장치(150)를 통하여 제어상태가 표시되게 되어 있다.And, on the heating jacket 110 surrounding the outer surface of the exhaust line 100, a separate temperature sensor 130 is mounted, the temperature sensor 130 is connected to the control unit 140 and automatically controlled and display device ( Through 150, the control state is displayed.

또한, 제어부(140)는 온도감지센서(130)에 의해 감지되는 온도값이 설정된 값을 벗어나면 경고발생장치(160)를 통하여 작업자에게 이를 알리게 되며, 이때의 경고발생장치(160)는 경고등이나 알람 등을 이용한다.In addition, the control unit 140 notifies the worker through the warning generating device 160 when the temperature value detected by the temperature sensor 130 is out of the set value, the warning generating device 160 is a warning light or Use alarms.

이하, 도면을 참조하여 본 발명에 따른 반도체 제조설비의 배기라인에 대한 작용 및 효과를 설명하면 다음과 같다.Hereinafter, the operation and effects on the exhaust line of the semiconductor manufacturing equipment according to the present invention with reference to the drawings.

먼저, 매니폴드(50)의 일측에 설치된 공정가스공급라인(60)을 통하여 소정의 반응가스가 공정튜브(10)의 내부로 공급시키고, 공정튜브(10)의 외부에 설치된 히터(40)를 가열시켜 공정튜브(10)의 온도를 고온 상태로 형성시킨다.First, a predetermined reaction gas is supplied into the process tube 10 through the process gas supply line 60 installed at one side of the manifold 50, and the heater 40 installed outside the process tube 10 is provided. Heating to form the temperature of the process tube 10 in a high temperature state.

이후, 소정의 공정 진행 후 생성된 잔류가스는 배기라인(100)을 통해 공정튜브(10)의 외부로 배기되는데, 배기라인(100)에는 히팅자켓(110)이 접착수단에 의해 밀착되도록 즉, 틈이 발생되지 않도록 배기라인(100)의 외면에 부착된다.Then, the residual gas generated after the predetermined process is exhausted to the outside of the process tube 10 through the exhaust line 100, the heating jacket 110 is in close contact with the adhesive means, that is, It is attached to the outer surface of the exhaust line 100 so that a gap does not occur.

이로 인해 공정튜브(10)의 내부온도와 배기라인(100)의 온도가 유사하게 형성되어 배기라인(100)을 통해 배기되는 잔류가스는 배기라인(100)의 내부에서 파우더로 고체화 되지 못하게 된다.As a result, the internal temperature of the process tube 10 and the temperature of the exhaust line 100 are similarly formed so that the residual gas exhausted through the exhaust line 100 cannot be solidified into powder in the exhaust line 100.

그리고, 배기라인(100)의 외면을 감싼 히팅자켓(110) 상에 장착되는 온도감지센서(130)에 의해 히팅자켓(110)의 온도를 감지하여 제어부(140)는 표시장치(150)를 통해 온도상태를 표시해주고, 온도감지센서(130)에 의해 감지되는 온도값이 설정된 값을 벗어나면 경고발생장치(160)를 통하여 작업자에게 이를 알리게 된다.In addition, the controller 140 senses the temperature of the heating jacket 110 by the temperature sensor 130 mounted on the heating jacket 110 covering the outer surface of the exhaust line 100. It displays the temperature state, and if the temperature value detected by the temperature sensor 130 is out of the set value it will notify the worker through the warning generating device 160.

한편, 본 발명은 도시한 실시예를 참고로 설명하였으나, 이는 예시적인 것에 불과하며, 본 기술 분야의 통상적 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 그러므로 본 발명의 범위는 첨부된 특허청구의 범위와 이와 균등한 것들에 의해 정해져야 한다.On the other hand, the present invention has been described with reference to the illustrated embodiment, which is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the scope of the present invention should be defined by the appended claims and their equivalents.

이상에서 설명한 바와 같이 본 발명은 히팅자켓을 접착수단에 의해 배기라인의 외면을 틈이 없도록 밀착시켜 배기라인과 일체형을 이룸으로써, 배기라인의 내부에서 온도저하로 인한 파우더의 생성을 방지하는 효과가 있다.As described above, the present invention forms an integral part with the exhaust line by closely attaching the heating jacket to the outer surface of the exhaust line by an adhesive means, thereby preventing the generation of powder due to the temperature decrease inside the exhaust line. have.

Claims (3)

공정챔버와 연결되며 상기 공정챔버에서 소정의 공정이 진행되어 생성된 잔류가스를 배기하는 배기라인; 및An exhaust line connected to a process chamber and configured to exhaust residual gas generated by a predetermined process in the process chamber; And 상기 배기라인의 외면에 밀착되도록 접착되는 히팅수단을 포함하는 것을 특징으로 하는 반도체 제조설비.And heating means adhered to be in close contact with the outer surface of the exhaust line. 제 1항에 있어서,The method of claim 1, 상기 히팅수단은 외부로부터 전원을 인가받아 전기적으로 발열하는 전열선이 내장된 히팅자켓인 것을 특징으로 하는 반도체 제조설비.The heating means is a semiconductor manufacturing equipment, characterized in that the heating jacket with a heating wire that is electrically generated by receiving power from the outside. 제 1항에 있어서,The method of claim 1, 상기 히팅수단에는 온도감지센서를 장착하는 것을 특징으로 하는 반도체 제조설비.The heating means is a semiconductor manufacturing equipment, characterized in that for mounting a temperature sensor.
KR1020050010802A 2005-02-04 2005-02-04 Semiconductor manufacturing equipment KR20060089532A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101364202B1 (en) * 2012-06-25 2014-02-20 서채영 Heating system using nano carbon fiber for preventing harmful gases with sticking on the inner surface of the pipe installed semi-conductor manufacturing equipment
KR101533856B1 (en) * 2010-08-28 2015-07-06 이찬우 Apparatus for controlling temperature of canister
KR102112178B1 (en) * 2018-11-13 2020-05-28 (주) 아이엔티매니지먼트 System for Monitoring and Controlling Plurality of Heater Jackets
KR20200104057A (en) * 2019-02-26 2020-09-03 (주)엘오티씨이에스 Apparatus for monitoring state of powder deposition in gas exhausting line for semiconductor production facility

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101533856B1 (en) * 2010-08-28 2015-07-06 이찬우 Apparatus for controlling temperature of canister
KR101364202B1 (en) * 2012-06-25 2014-02-20 서채영 Heating system using nano carbon fiber for preventing harmful gases with sticking on the inner surface of the pipe installed semi-conductor manufacturing equipment
KR102112178B1 (en) * 2018-11-13 2020-05-28 (주) 아이엔티매니지먼트 System for Monitoring and Controlling Plurality of Heater Jackets
KR20200104057A (en) * 2019-02-26 2020-09-03 (주)엘오티씨이에스 Apparatus for monitoring state of powder deposition in gas exhausting line for semiconductor production facility

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