M293528 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種氣體加熱裝置，尤指藉由一種環繞於加熱器 外圍之螺旋狀導管，能夠讓流通於導管中之外來氣體，以間接輻射之 加熱方式升溫’而排進真空泵浦的排氣管路上，避免經由真空泵浦排 出的廢氣氣體，與較為低溫之廢氣管路凝結成粉塵而沉積於管路中， 並減少清洗排氣管路之人力消耗。 【先前技#f】 按，在半導體製程當中，特別是擴散（diffusion) >沉積製程， 必須透過不同的紐财晶圓上產生反應，細形成—道—氧化膜。 由於半導體晶片（wafer)生產真空設備，在每批晶片（wafer)生產 過程中伴隨著製程廢氣的排放’在通過真空果浦（dry _)之後， 因為排放管溫度降_形成冷凝絲，使得廢驗容易為粉塵， 而沉積在真空賴（dry pump) _氣處理器（_bber)中的内壁 上，日積月累之下造成管路内徑嚴重縮小甚至堵塞，將導致排氣量不 足而引發安全衛生問題，嚴重棚可能使得廢氡裝置起火而引起火災 爆炸之危險’此-狀況又以半導體廠及光電廠最為簡，而且一旦真 空果浦兩端之壓降若超過5Psi ’則會立即停止運作而造絲程中斷、， ^此必須時常倚賴人力加以清理排氣管路，碟保真空錢出口端氣體 營路之暢通，以防止廢氣產生沉積現象。 > 故，為避免廢氣沉積的現象發生，則必須在廢氣触時維持一定 溫度，習有做法之一則是將排氣管路外壁包覆加熱套 1 η忌 M293528 咖），但該方式除了加熱效率並不均勻之外，在管路内的溫度變化也 不易於控制且成本耗費相當高，但所制的效果並不顯著。 丨-聽廢氣沉_現象發生之新式方法，較在真线浦的排 氣管路上加场权受減體，舰特魏溫度，料降低排氣管 路之廢氣濃度，如第-圖所示，其係於一機殼1〇之密閉空間當中設有 加熱器20 ’當廢氣經由-端之進氣管1〇1進入，經過加熱器2〇加熱 升溫之後’再經另端之排放管102排進真空果浦的排氣管路上，藉以 達成氣體加熱之作用。 然而’該-加熱方式將使得加人之氣體與加熱器直接接觸而受熱， 在氣體回流時容易造成二次反應，而發生氣爆的危險，再者一旦加熱 器耗損而必須更換時，便得中斷製程才得以進行，而影響到經濟效益。 【新型内容】 有鑒於習知缺點’以及上之不足，本_作人乃思及創作意 念，積極地投入創新與改良之精神，經過多方試驗與改良，終於研究 出本創作，以供產業更大之利用。 本創作之主要目的，在於提供一種氣體加熱裝置，利用間接加熱 方式，將加熱後之外來氣體加入真空泵浦之排氣管路中，使得廢氣排 放時能夠維持一定溫度，避免形成粉塵而造成管路沉積之現象發生， 以及清洗排氣管路之人力消耗。 本創作之另一目的，在於提供一種氣體加熱裝置，在加熱器耗損 時，不需停機中斷製程之進行，便可快速地加以更換，有助於經濟效 盈之提升。 M293528 本創作之又目的’在於提供-種氣體加熱裝置，其係透過溫度 檢測計之檢測，以及利用溫控裝置作為溫度的調整及設定，而成為具 有自動控溫之高安全性加熱裝置。 【實施方式】 為使貴審查委員方便了解本創作之内容及所能達成之功效，兹 _配合圖式就有關本創作之具體實施例詳加說明其結構特徵如下·· 睛參閱第-圖及第五圖所示，本創作之氣體加熱裝置，主要適用 .於半導體及光電製程，其係包含有一機殼卜一加熱器2及一導管3，該 機殼1呈中空圓筒狀，具有-容置空間供以加熱器2及導管3容設於其中 ，於其内緣包覆有隔熱墊1卜用以防止内部熱能自機殼i散熱，以及降 低機殼1表面溫度避免燙手，並且於其底端可進一步設有支撐架4，讓 本創作得以架立於平面上，另該加熱器2係由機殼丨一端之承板12及一 背板13加歧制定，並？設_殼1#巾，_該域㈤係利用電 >能轉換成熱能，可利用具有高效率及高發熱之鹵素燈管或是石英燈管， 以產生較鬲之溫度以及快速的達成加熱功效。 上述導管3係呈螺旋狀環繞於加熱器2外圍而容置於機殼丨當中，使 知、、二由導笞3/危通之外來氣體，能夠藉由加熱器2之輻射作用而間接加 熱，另導管3兩端所形成之進氣端及排氣端，則凸伸於機殼丨所設加熱 器2之相異端，並分別透過與進氣管接頭5及排氣管接頭6連接，而具有 一轴向之進氣口 51及徑向之排氣口 61，其中排氣管接頭6之軸向端進-步。又有/JnL度檢測計7，可處量測到外來氣體加熱後之溫度，同時以電 性連接至—溫控裴置8，藉由該溫控裝置8作為加熱器溫度之調整及設 M293528 定，而達到自動控溫之效果。 明瞭上述之元件結構後，為了更明確說明本創作之實施方法及較 佳實施例’請續參閱第六圖及第七圖，如圖中所示，在半導體製程當 中，由化學氣相沉積裝置70 (CVD)反應後之廢氣，藉由真空泵浦3〇 (Dry pump)的運轉’透過與其兩端連接之排氣管路4〇、4〇，輸送至廢 氣排放系 (removal SyStem) 摘作之_加熱裝· 藉由連接於排氣口61之排氣管路40，，，銜接概有介於真空系浦 廢氣排放系統50間之排氣管路40,上，然後由儲氣襄置6〇之進氣管路8〇 ’透過進氣管接頭5之進氣口51’灌進一種不易因為加溫而產生氣爆之 外來氣體進入導管3中’如：氮氣（N2)、氬氣（Ar)或潔淨空氣，該 外來乳體依照導管3之螺旋方向前進，而受導管3外圍之加熱器2輻射間 接加熱作用加溫，再經由排氣管接頭6之排氣哺排出，且進入真空果 浦3〇至廢氣排放系統50間之排氣管路4〇，上，藉由該加熱後之外來=體 降低廢氣溫度梯賴姆，並有效的稀㈣路巾之魏濃度，進而避 免廢氣因冷凝現象形成沉積，而堵塞排路4()，之情形發生。 綜上所述，相較於習之技術之差異，本創作所能達成之效益在於： 卜利用録燈管或石英燈管，取储相雜_ :及=:熱::及:_達一 置之凋正、叹疋，而達成自動控溫之功效。 2机經於導官令之外來氣體，受加熱器之間接 溫’能夠避娜峨觸纖㈣蝴之危險升 3、在加熱ϋ耗損時’ μ停機情製程之進行，便可快速地加以 M293528 更換’有助於轉效益之提升。 、上所述者，僅為本創作之一較佳實施例而已，惟熟悉該項技 術者仍可以其他方式替代，當不能用以限定本創作實施之範圍 ^本創作之精神所作之均等變化與修飾，仍應屬本創作之專利涵蓋範 【圖式簡單說明】 鲁=圖所示係習有加熱裝置之實施狀態剖面示意圖。 弟二_示係本創作加錄置外觀立體圖。 第三圖所示係第二_所視得之顺立體圖。 .第四_示縣_加_置之峰轉分解圖。 第圖所不係本創作之加熱敦置與溫控裝置外觀圖。 第六圖所轉本創作之錢狀態與職祕示意圖。 第七圖所τ縣創作翻辨導贿程之實錄態示意圖。 【主要元件符號說明】 101......... 102......... 20.......... 30.......... 40、40,、40” 50.......... 60···· -----進氣管 • · ••排放管 ····加熱器 ····真空泵浦 • · · ·排氣管路 廢氣排放系統 ----儲氣裝置 M293528 70...................化學氣相沉積裝置 80...................進氣管路 1··..................機殼 11 ...................隔熱墊 12 ...................承板 13 ...................背板 2....................加熱器 • 3....................導管 4····................支撐架 5 ....................進氣管接頭 51...................進氣口 6 ....................排氣管接頭 61...................排氣口 7 ....................溫度檢測計 溫控裝置 8M293528 VIII. New description: [New technical field] This creation is about a gas heating device, especially a spiral conduit around the periphery of the heater, which allows the gas flowing in the conduit to be indirectly The radiation heating method is heated to be discharged into the vacuum pumped exhaust line to avoid exhaust gas discharged through the vacuum pump, and is condensed into a pipeline with a relatively low temperature exhaust gas line, and is reduced in the cleaning exhaust line. Human consumption. [Previous technology #f] Press, in the semiconductor process, especially the diffusion > deposition process, must be reacted through different New Zealand wafers to form a thin film. Since semiconductor wafers produce vacuum equipment, the discharge of process exhaust gas is accompanied by the production process in each batch of wafers' after passing through the vacuum _ (dry _), because the discharge pipe temperature drops _ forming condensed wire, making waste It is easy to be dust, and it is deposited on the inner wall of the dry pump _ _bber. The inner diameter of the pipe is seriously reduced or even blocked due to the accumulation of exhaust gas, which will lead to insufficient exhaust gas and safety and health problems. Severe sheds may cause the demolition device to catch fire and cause fire and explosion. This situation is the simplest in semiconductor factories and photovoltaic power plants, and once the pressure drop at both ends of the vacuum fruit pump exceeds 5Psi, it will immediately stop operating. The wire length is interrupted, ^ This must always rely on manpower to clean the exhaust pipe, and the vacuum gas outlet at the outlet of the vacuum cleaner is unblocked to prevent the deposition of exhaust gas. > Therefore, in order to avoid the phenomenon of exhaust gas deposition, it is necessary to maintain a certain temperature when the exhaust gas touches. One of the conventional practices is to coat the outer wall of the exhaust pipe with a heating jacket 1 η, M293528 coffee, but this method is not only heating In addition to the inefficiency of the efficiency, the temperature variation in the pipeline is not easy to control and the cost is relatively high, but the effect is not significant.丨-Listen to the exhaust gas sinking_The new method of occurrence occurs. Compared with the exhaust line of the true line, the field weight is reduced. It is provided with a heater 20 in a closed space of a casing 1 'When the exhaust gas enters through the intake pipe 1〇1 of the end, and is heated and heated by the heater 2〇, and then passes through the other end of the discharge pipe 102. It is discharged into the exhaust pipe of the vacuum fruit pump to achieve the effect of gas heating. However, the heating method will cause the gas to be heated in direct contact with the heater, and it will easily cause a secondary reaction when the gas is returned, and the risk of gas explosion will occur, and once the heater is worn out, it must be replaced. Interruption of the process can be carried out, which affects economic efficiency. [New content] In view of the shortcomings of the well-known and shortcomings, this _ person is thinking and creative ideas, actively investing in the spirit of innovation and improvement, after many trials and improvements, finally developed this creation for the industry to Big use. The main purpose of the present invention is to provide a gas heating device, which uses an indirect heating method to add a heated external gas to the vacuum pumping exhaust pipe, so that the exhaust gas can maintain a certain temperature during discharge, thereby avoiding the formation of dust and causing the pipeline. The phenomenon of deposition occurs and the labor consumption of cleaning the exhaust line. Another object of the present invention is to provide a gas heating device that can be quickly replaced when the heater is worn out without interrupting the process, which contributes to economic efficiency. M293528 The purpose of this creation is to provide a gas heating device that passes through the detection of a temperature detector and uses a temperature control device as a temperature adjustment and setting to become a high-safety heating device with automatic temperature control. [Embodiment] In order to make it easier for your review committee to understand the content of the creation and the effect it can achieve, please refer to the diagram for details on the specific embodiment of the creation. The structural features are as follows: As shown in the fifth figure, the gas heating device of the present invention is mainly applicable to semiconductor and photoelectric processes, and comprises a casing, a heater 2 and a conduit 3, which has a hollow cylindrical shape and has - The accommodating space is provided with the heater 2 and the conduit 3 therein, and the inner edge thereof is covered with the heat insulating pad 1 to prevent the internal heat energy from dissipating heat from the casing i, and the surface temperature of the casing 1 is lowered to avoid hot hands, and At the bottom end, a support frame 4 can be further provided to allow the creation to stand on a plane, and the heater 2 is formed by the difference between the carrier 12 and the back plate 13 at one end of the casing. _Shell 1# towel, _This field (5) can be converted into heat energy by using electric energy, and can use halogen tube or quartz tube with high efficiency and high heat to produce relatively high temperature and fast heating. efficacy. The duct 3 is spirally wound around the periphery of the heater 2 and accommodated in the casing ,, so that the gas from the outside of the guide 3/risk can be indirectly heated by the radiation of the heater 2. The inlet end and the exhaust end formed by the two ends of the other conduit 3 protrude from the opposite end of the heater 2 provided in the casing, and are respectively connected to the intake pipe joint 5 and the exhaust pipe joint 6, There is an axial inlet port 51 and a radial exhaust port 61, wherein the axial end of the exhaust pipe joint 6 is advanced. There is also a /JnL degree tester 7, which can measure the temperature of the external gas after heating, and is electrically connected to the temperature control device 8, by the temperature control device 8 as the heater temperature adjustment and setting M293528 Set, and achieve the effect of automatic temperature control. After the above-described component structure is clarified, in order to clarify the implementation method and preferred embodiment of the present invention, please refer to the sixth and seventh figures, as shown in the figure, in the semiconductor process, by the chemical vapor deposition device. The exhaust gas after the 70 (CVD) reaction is sent to the exhaust gas discharge system (moving SyStem) through the operation of the vacuum pump 3D (Dry pump) through the exhaust lines 4〇, 4〇 connected to both ends thereof. _heating device. By means of the exhaust line 40 connected to the exhaust port 61, the connection is provided between the vacuum line exhaust gas discharge system 50, and then by the gas storage device 6 The intake pipe 8〇' is filled through the intake port 51' of the intake pipe joint 5, and it is not easy to generate gas explosion due to heating, and the gas enters the conduit 3, such as nitrogen (N2), argon ( Ar) or clean air, the foreign body is advanced according to the spiral direction of the catheter 3, and is heated by the indirect heating of the heater 2 outside the duct 3, and then discharged through the exhaust of the exhaust pipe joint 6, and enters the vacuum. From the 3rd to the exhaust line of the exhaust system 50, After the heating, the external body = lowering the exhaust gas temperature and the effective concentration of the diluted (four) road towel, thereby preventing the exhaust gas from forming a deposit due to condensation, and blocking the drainage 4 (). In summary, compared with the difference in the technology of Xi, the benefits that can be achieved by this creation are as follows: Use the recording tube or quartz tube to take care of the storage _ : and =: heat:: and: _ up one Set the withered, sigh, and achieve the effect of automatic temperature control. 2 Machines are exposed to gas from the commander's order, and the temperature is connected between the heaters. It can avoid the danger of the 峨 峨 ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The replacement 'helps to improve the efficiency. The above description is only a preferred embodiment of the present invention, but those skilled in the art can still be replaced by other means, and cannot be used to limit the scope of the creation of the creation. Modifications should still be the patent coverage of this creation [Simplified description of the drawings] Lu = the diagram shows the schematic diagram of the implementation state of the heating device. The second _ _ shows the creation of the appearance of the three-dimensional map. The third figure shows the cis-stereoscopic view of the second _. The fourth _ shows the county _ plus _ set the peak turn decomposition map. The figure is not the appearance of the heating and temperature control device of this creation. The state of money and the secrets of the secrets created in the sixth picture. The seventh picture shows the real record of the gradual discrimination of the brig. [Description of main component symbols] 101.........102.........20.......... 40. 40, 40" 50.......... 60···· ----- Intake pipe • · •• Discharge pipe ····Heater ····Vacuum pump • · · ·Exhaust line exhaust system----Gas storage device M293528 70...................Chemical vapor deposition device 80........ ...........Intake line 1··..................Chassis 11 ........... ........Insulation pad 12........................Board plate 13 ................ ...backplane 2....................heater• 3.................... Catheter 4····...................Support frame 5 ....................Intake pipe joint 51 ...................Air inlet 6 ....................Exhaust pipe joint 61.. .................Exhaust port 7 .................... Temperature tester temperature control device 8