CN208819848U - Exhaust system and semiconductor equipment - Google Patents
Exhaust system and semiconductor equipment Download PDFInfo
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- CN208819848U CN208819848U CN201821788478.5U CN201821788478U CN208819848U CN 208819848 U CN208819848 U CN 208819848U CN 201821788478 U CN201821788478 U CN 201821788478U CN 208819848 U CN208819848 U CN 208819848U
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- gas
- exhaust
- joint body
- exhaust system
- inert gas
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Abstract
The utility model provides a kind of exhaust system and semiconductor equipment, including exhaust pipe and several conduit couplings, the conduit coupling has the joint body being connected to the exhaust pipe, several gas injection ducts annularly arranged are provided at least one section of tube wall of the joint body, the gas injection duct is for receiving inert gas and spraying the inert gas to the joint body, mix the exhaust gas with the inert gas, the exhaust gas is avoided to be attached on the inner wall of the exhaust pipe to the cold, and the flow-disturbing that the inert gas provides can also make exhaust gas drag reduction on the direction flowed through, avoid exhaust gas recharge into pumping cells, the risk that the pumping cells are destroyed can effectively be reduced.
Description
Technical field
The utility model relates to technical field of semiconductor preparation more particularly to a kind of exhaust system and semiconductor equipments.
Background technique
In semi-conductor industry is made, film layer deposition apparatus is very universal board, such as chemical vapor depsotition equipment,
Pvd equipment or extension furnace apparatus etc. would generally generate exhaust gas during film layer deposit, need to use vacuum
Pump extracts the exhaust gas by high temperature in board out, and in order not to generate pollution, the exhaust gas of extraction can be conveyed by exhaust system
Carry out exhaust-gas treatment into an exhaust treatment system, but the process that the exhaust gas of high temperature circulates in the exhaust pipe of exhaust system
In, temperature can be reduced slowly, cause the complete residual gas of unreacted to be attached on the tube wall of exhaust pipe, and then lead to pipeline blockage
And so that vacuum pump discharges is affected and block, so vacuum pump discharges pipeline need to frequently cooperate maintenance to clean or clean, maintenance
When vacuum pump need to be shut down, make film layer deposition apparatus also and need cooperation maintenance to be shut down, utilized in addition to influencing film layer deposition apparatus production capacity
Except rate, is also fallen because maintenance will cause a large amount of dust when dismounting, also will affect environment.Further, it is kept away due to having no idea
Exempt to react incomplete exhaust gas caused by because of heating unevenness and be attached on pipeline to cause vacuum pump discharges abnormal, probably due to pressure is returned
Punching, which causes vacuum pump to be destroyed, to be made pressure recharge that dust be caused to be attached on silicon wafer, silicon wafer is caused to be scrapped.
Utility model content
The purpose of this utility model is to provide a kind of exhaust system and semiconductor equipments, to solve existing exhaust system
In be attached on tube wall to the cold due to exhaust gas, cause exhaust system that maintenance need to frequently be cooperated to clean or cleaning, and then reduce and produce
The problem of energy and wafer defect.
In order to achieve the above object, the utility model provides a kind of exhaust system, comprising:
Exhaust pipe, for discharging exhaust gas；And
Several conduit couplings are connect with the exhaust pipe；Wherein, the conduit coupling has and the exhaust pipe
The joint body of road connection, is provided with several gas jetting holes annularly arranged at least one section of tube wall of the joint body
Road, the gas injection duct is for receiving inert gas and spraying the inert gas to the joint body.
Optionally, toroidal cavity, the air inlet of the toroidal cavity are provided at least one section of tube wall of the joint body
Mouth is connected to an inert gas supply arrangement, to be passed through the inert gas and multiple gas into the toroidal cavity
Body ejection channel is arranged along the toroidal cavity ring-type, and is connected to the toroidal cavity, so that in the toroidal cavity
The inert gas is sprayed by gas injection duct body to the joint body.
Optionally, when being passed through exhaust gas in the exhaust pipe, the inert gas is from the gas injection duct
It is ejected along the direction that flows through of the exhaust gas, and imports the exhaust gas in vortex shape.
Optionally, the temperature of the exhaust gas of the exhaust pipe is passed through between 100 degrees Celsius -150 degrees Celsius, from the gas
The temperature of the inert gas sprayed in ejection channel is greater than 100 degrees Celsius.
Optionally, the axial structure between the radial direction of the joint body in the gas injection duct has angle, described
The range of angle is spent between 1 degree -10.
Optionally, the axial angle constituted between the radial direction of the joint body in each gas injection duct is equal
It is equal.
Optionally, the conduit coupling further includes heating member, for heating the inert gas, wherein the heating member
It is set in the toroidal cavity or is set in the joint body.
Optionally, the conduit coupling further includes temperature measuring element, and the temperature probe of the temperature measuring element protrudes into the connector sheet
In vivo, to measure the temperature in the joint body.
Optionally, the exhaust system is used to obtain exhaust gas from a pumping cells and the exhaust gas is emitted into an exhaust gas
In processing unit, and the end in the exhaust system close to the pumping cells is provided with the conduit coupling, described
The one end of the both ends of conduit coupling respectively with the gas outlet of the pumping cells and the exhaust pipe is detachably connected.
The utility model additionally provides a kind of semiconductor equipment, including reaction chamber, pumping cells, exhaust gas treatment unit and institute
Exhaust system is stated, the pumping cells are connect to extract the exhaust gas in the reaction chamber out with the reaction chamber, and the exhaust gas passes through
The exhaust gas treatment unit is flowed into after the exhaust system to be handled.
Optionally, the semiconductor equipment includes film layer deposition apparatus.
In exhaust system provided by the utility model and semiconductor equipment, including exhaust pipe and the connection of several pipelines
Part, the conduit coupling have the joint body being connected to the exhaust pipe, an at least Duan Guanbi for the joint body
On be provided with several gas injection ducts annularly arranged, the gas injection duct is for receiving inert gas and will be described
Inert gas is sprayed to the joint body, mixes the exhaust gas with the inert gas, avoids the exhaust gas attached to the cold
In on the inner wall of the exhaust pipe, and the flow-disturbing that the inert gas provides also can be such that exhaust gas hinders on the direction flowed through
Power is reduced, and is avoided exhaust gas recharge into pumping cells, can effectively be reduced the risk that the pumping cells are destroyed.
Detailed description of the invention
Fig. 1-Fig. 2 is a kind of structural schematic diagram of semiconductor equipment；
Fig. 3 is the structural schematic diagram of semiconductor equipment provided by the embodiment of the utility model；
Fig. 4 is the structural schematic diagram of conduit coupling provided by the embodiment of the utility model；
Fig. 5 is the structural schematic diagram in gas injection duct provided by the embodiment of the utility model；
Wherein, appended drawing reference are as follows:
1 '-pumping cells；1- pumping cells；
2 '-exhaust pipes；2- exhaust pipe；
3 '-exhaust gas treatment units；3- exhaust gas treatment unit；
41 '-inert gas supply arrangements；
4- conduit coupling；41- inert gas supply arrangement；42- joint body；421- outer wall；422-
Inner wall；423- toroidal cavity；424- gas injection duct；43- heating member；44- power interface.
Specific embodiment
Fig. 1 is a kind of structural schematic diagram of semiconductor equipment.The semiconductor equipment includes pumping cells 1 ', exhaust pipe
2 ' and exhaust gas treatment unit 3 ', the pumping cells 1 ' connect with a reaction chamber, the both ends of the exhaust pipe 2 ' are separately connected
The pumping cells 1 ' and the exhaust gas treatment unit 3 ', the pumping cells 1 ' extract exhaust gas out out of described reaction chamber, through institute
It states and flows into the exhaust gas treatment unit 3 ' after exhaust pipe 2 ' and handled, the exhaust gas recharge in exhaust pipe 2 ' is extremely in order to prevent
In pumping cells 1 ', as shown in Fig. 2, several inert gas supply arrangements are also arranged in the exhaust system on exhaust pipe 2 '
41 ', the axial direction of the inert gas supply arrangement 41 ' and the axial structure of the exhaust pipe 2 ' are in an acute angle, from the inertia
The inert gas (e.g. nitrogen) of high temperature (being greater than 100 degrees Celsius) is passed through in gas feeding apparatus 41 ', to mention for the exhaust gas
For a forward momentum, prevents exhaust gas recharge and exhaust gas is made to keep certain temperature.But as shown in Fig. 2, this inert gas
The design of supply arrangement 41 ' can not be such that inert gas is uniformly mixed with exhaust gas, also can not just exhaust gas be made to be heated evenly, and part is useless
Gas is still easy condensation and is attached on the tube wall of the exhaust pipe 2 ', leads to abnormal gas exhaust, and can not also avoid completely
The pressure of exhaust gas is backwashed.
Based on this, the utility model provides a kind of exhaust system and semiconductor equipment, if including exhaust pipe and main pipe
Pipe connecting, the conduit coupling have the joint body that is connected to the exhaust pipe, and at least the one of the joint body
Several gas injection ducts annularly arranged are provided on Duan Guanbi, the gas injection duct is for receiving inert gas simultaneously
The inert gas is sprayed to the joint body, mixes the exhaust gas with the inert gas, avoids the exhaust gas
It is attached on the inner wall of the exhaust pipe to the cold, and the flow-disturbing that the inert gas provides also can make exhaust gas in the side flowed through
Upward drag reduction avoids exhaust gas recharge into pumping cells, can effectively reduce the risk that the pumping cells are destroyed.
Specific embodiment of the present utility model is described in more detail below in conjunction with schematic diagram.It is retouched according to following
It states and claims, will be become apparent from feature the advantages of the utility model.It should be noted that attached drawing is all made of very simplification
Form and use non-accurate ratio, only to it is convenient, lucidly aid in illustrating the purpose of the utility model embodiment.
As shown in figure 3, the utility model provides a kind of exhaust system, comprising: exhaust pipe 2, for discharging exhaust gas；With
And several conduit couplings 4 are connect with the exhaust pipe 41；Wherein, the conduit coupling tool 4 has and the exhaust pipe
The joint body 42 of 2 connections, if being provided with the dry gas spray annularly arranged at least one section of tube wall of the joint body 42
Perforation road 424, the gas injection duct 424 is for receiving inert gas and spraying the inert gas to the connector sheet
In body 42.
Specifically, please continue to refer to Fig. 3, the exhaust pipe 2 between a pumping cells 1 and exhaust gas treatment unit 3,
The pumping cells 1 connect a reaction chamber (not shown), the exhaust gas extraction for will generate in the reaction chamber, the reaction chamber
The usually reaction chamber of a film layer deposition apparatus, the film layer deposition apparatus is preferably low pressure chemical vapor deposition equipment, heavy
During product, the extreme temperatures of exhaust gas in the reactor chamber, the exhaust gas of high temperature reach at the gas outlet of pumping cells 1 temperature between
100 degrees Celsius -150 degrees Celsius, then by-product in exhaust gas etc. is easy to condense out in the exhaust pipe 2 of exhaust system
(especially when exhaust pipe 2 is long, it is easier to condense and be attached on the tube wall of exhaust pipe 2), therefore the present embodiment
In, several conduit couplings 4 are provided on the exhaust pipe 2, the conduit coupling 4 can be one and be also possible to
It is multiple, it is preferably several, alternatively, can also so understand, when the conduit coupling 4 is multiple, the exhaust pipe 2
It can be multistage, the conduit coupling 4 connects exhaust pipe 2 described in multistage.
Further, as shown in figure 4, the conduit coupling 4 includes hollow joint body 42, i.e., the described joint body 42
Inner cavity with both ends connection, at least one section includes outer wall 421, inner wall 422 and by described on the tube wall of the joint body 42
The toroidal cavity 423 that outer wall 421 and the inner wall 422 are constituted, one end of an inert gas supply arrangement 41 and the annular are empty
The air inlet of chamber 423 is connected to, to be passed through the inert gas (such as nitrogen etc.) of high temperature into the toroidal cavity 423.The ring
The gas injection duct 424 of several cyclic annular arrangements is provided on the inner wall of shape cavity 423, i.e., the described gas injection duct 424 is
It is provided on the inner wall 422, so that the inner cavity of the toroidal cavity 423 and the joint body 42 passes through several gas
Body ejection channel 424 is connected to, and the inert gas is sprayed out of described toroidal cavity 423 by the gas injection duct 424
Into in the inner cavity of the joint body 42, to provide impulse force and heat for the exhaust gas.Optionally, it is supplied by the inert gas
It is greater than 100 degrees Celsius to the temperature for the inert gas that equipment 41 is passed through.
As shown in figure 5, the gas injection duct 424 on the inner wall of the toroidal cavity 423 has multiple, multiple gas
Circumferential direction of the body ejection channel 424 along the inner cavity of the joint body 42 is uniformly arranged, uniformly to the joint body 42
Interior intracavitary penetrating multiply inert gas.In the present embodiment, gas injection duct 424 on the inner wall of the toroidal cavity 423
Quantity is 8, and position of each gas injection duct 424 on the direction that the exhaust gas flows through is identical, i.e. 8 gas
Body ejection channel 424 is identical in the axial position along the joint body 42, in the radially structure along the joint body 42
At a circle.Optionally, the inner wall 422 is that have certain thickness, keeps the gas injection duct 424 inclined
It opens up, and in the present embodiment, the axial direction in each gas injection duct 424 is not perpendicular in the joint body 42
The radial direction of chamber, but there is an angle a with the radial direction of the inner cavity of joint body 42, the range of the angle a is between 1 degree -10
Between degree, and the radial angle a in 8 gas injection ducts 424 and the inner cavity of the joint body 42 is equal, with
It sprays the inert gas from the gas injection duct 424 along the direction that the exhaust gas flows through, and forms vortex shape
Inert gas enters the interior intracavitary of the joint body 42, shown in arrow as described in Figure 4.The inert gas of the vortex shape mentions
The flow-disturbing of confession can make exhaust gas drag reduction on the direction flowed through, avoid exhaust gas recharge into pumping cells 1, can be effective
Reduce the risk that the pumping cells 1 are destroyed.
Further, referring to Fig. 4, being additionally provided with a heating member 43 in the conduit coupling 4, e.g. heating plate or
Heater strip etc..The heating member 43 can be set in intracavitary in the joint body 42 and be close to the inner wall 422, for institute
The interior intracavitary mixed gas for stating joint body 42 is heated, and the condensation of exhaust gas is further avoided.Optionally, the heating member
43 can be set to the interior intracavitary of the joint body 42 in a ring, to increase the area of heating.It is understood that described add
Warmware 43 also can be set in the toroidal cavity 423, and is close to the inner wall 422 and is arranged, not only can be to the annular
Inertia in cavity 423 is preheated, and avoids its cooling, and the heating member 43 is actually the temperature that can make inner wall 422
It spends raised, can also transfer heat to the interior intracavitary of joint body 42 indirectly.Optionally, the heating member 43 also passes through
One conducting wire is connect with a power interface 44, to pass through 44 heating power of power interface.
Optionally, the conduit coupling 4 further includes a temperature measuring element (not shown), and the temperature probe of the temperature measuring element can be with
It protrudes into the joint body 42, to measure the temperature of gas in the joint body 42, convenient for monitoring at any time.
Optionally, the end in the exhaust system close to the pumping cells 1 is provided with the conduit coupling 4, institute
The one end of the both ends of conduit coupling 4 respectively with the gas outlet of the pumping cells 1 and the exhaust pipe 2 is stated detachably to connect
It connects.I.e. in the present embodiment, the conduit coupling 4 but is answered between the pumping cells 1 and the exhaust pipe 2
Understand, the conduit coupling 4 can also actually be located at other positions, the e.g. middle part etc. of exhaust pipe 2, herein not
An another citing.The connection structures such as flange can be set in the both ends of the joint body 42, to realize conduit coupling 4 and other
Pipeline is detachably connected.
Based on this, the present embodiment additionally provides a kind of semiconductor equipment, including reaction chamber, pumping cells 1, exhaust gas 3 and institute
Exhaust system is stated, the pumping cells 1 are connect to extract the exhaust gas in the reaction chamber out with the reaction chamber, and the exhaust gas passes through
The exhaust gas treatment unit is flowed into after the exhaust system to be handled.Optionally, the semiconductor equipment includes film layer deposit
Equipment, the reaction chamber can be the reaction chamber of any film layer deposition apparatus, such as reaction chamber, the object of chemical vapor depsotition equipment
Reaction chamber or the reaction chamber of furnace oxidation equipment of physical vapor deposition equipment etc., the utility model is with no restriction.
To sum up, in exhaust system provided by the embodiment of the utility model and semiconductor equipment, if including exhaust pipe and
Main pipe pipe connecting, the conduit coupling have the joint body being connected to the exhaust pipe, and the joint body is extremely
Several gas injection ducts annularly arranged are provided on few one section of tube wall, the gas injection duct is for receiving indifferent gas
Body simultaneously sprays the inert gas to the joint body, mixes the exhaust gas with the inert gas, avoids described
Exhaust gas is attached to the cold on the inner wall of the exhaust pipe, and the flow-disturbing that the inert gas provides also can be such that exhaust gas is flowing through
Direction on drag reduction, avoid exhaust gas recharge into pumping cells, can effectively reduce what the pumping cells were destroyed
Risk.
The preferred embodiment that above are only the utility model, does not play the role of any restrictions to the utility model.
Any person of ordinary skill in the field, in the range of not departing from the technical solution of the utility model, to the utility model
The technical solution and technology contents of exposure make the variation such as any type of equivalent replacement or modification, belong to without departing from the utility model
Technical solution content, still fall within the protection scope of the utility model.
Claims (11)
1. a kind of exhaust system characterized by comprising
Exhaust pipe, for discharging exhaust gas；And
Several conduit couplings are connect with the exhaust pipe；Wherein, the conduit coupling has connects with the exhaust pipe
Logical joint body is provided with several gas injection ducts annularly arranged at least one section of tube wall of the joint body,
The gas injection duct is for receiving inert gas and spraying the inert gas to the joint body.
2. exhaust system as described in claim 1, which is characterized in that be provided at least one section of tube wall of the joint body
Toroidal cavity, the air inlet of the toroidal cavity are connected to an inert gas supply arrangement, to be passed through into the toroidal cavity
The inert gas and multiple gas injection ducts are arranged along the toroidal cavity ring-type, and empty with the annular
Chamber connection, so that the inert gas in the toroidal cavity is sprayed by gas injection duct body to the connector sheet
In vivo.
3. exhaust system as claimed in claim 2, which is characterized in that described when being passed through exhaust gas in the exhaust pipe
Inert gas is ejected from the gas injection duct along the direction that flows through of the exhaust gas, and imports described give up in vortex shape
Gas.
4. exhaust system as claimed in claim 3, which is characterized in that be passed through the temperature of the exhaust gas of the exhaust pipe between
100 degrees Celsius -150 degrees Celsius, the temperature of the inert gas sprayed from the gas injection duct is greater than 100 degrees Celsius.
5. exhaust system as claimed in claim 1 or 2, which is characterized in that the axial direction in the gas injection duct connects with described
Structure has angle between the radial direction of head ontology, and the range of the angle is spent between 1 degree -10.
6. exhaust system as claimed in claim 5, which is characterized in that the axial direction in each gas injection duct connects with described
The angle constituted between the radial direction of head ontology is equal.
7. exhaust system as claimed in claim 2, which is characterized in that the conduit coupling further includes heating member, for adding
The heat inert gas, wherein the heating member is set in the toroidal cavity or is set in the joint body.
8. exhaust system as described in claim 1, which is characterized in that the conduit coupling further includes temperature measuring element, the survey
The temperature probe of warm part protrudes into the joint body, to measure the temperature in the joint body.
9. exhaust system as described in claim 1, which is characterized in that the exhaust system from a pumping cells for obtaining
The exhaust gas is simultaneously emitted into an exhaust gas treatment unit by the exhaust gas, and close to the pumping cells in the exhaust system
End be provided with the conduit coupling, the both ends of the conduit coupling respectively with the gas outlet of the pumping cells and institute
The one end for stating exhaust pipe is detachably connected.
10. a kind of semiconductor equipment, which is characterized in that including reaction chamber, pumping cells, exhaust gas treatment unit and claim 1-
Exhaust system described in any one of 9, the pumping cells are connect to extract the exhaust gas in the reaction chamber out with the reaction chamber,
The exhaust gas is handled by flowing into the exhaust gas treatment unit after the exhaust system.
11. semiconductor equipment as claimed in claim 10, which is characterized in that the semiconductor equipment includes that film layer deposit is set
It is standby.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821788478.5U CN208819848U (en) | 2018-10-31 | 2018-10-31 | Exhaust system and semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821788478.5U CN208819848U (en) | 2018-10-31 | 2018-10-31 | Exhaust system and semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208819848U true CN208819848U (en) | 2019-05-03 |
Family
ID=66280677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821788478.5U Active CN208819848U (en) | 2018-10-31 | 2018-10-31 | Exhaust system and semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208819848U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565161A (en) * | 2019-09-18 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Tail gas transmission device |
-
2018
- 2018-10-31 CN CN201821788478.5U patent/CN208819848U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565161A (en) * | 2019-09-18 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Tail gas transmission device |
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